JP2002353518A - Photosemiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photosemiconductor device with superior durability, which is free of rusting of a lead frame and a decrease in the luminance of a photosemiconductor element, even if it is used in a high-temperature and high-humidity environment for a long period. SOLUTION: The lead frame 2 has silver plated layers 10 formed at the installation part 10 of a die pad 7 where at least a semiconductor element 3 is installed, except boards 9 between inner leads 5a and 6a which are sealed into a hardened body 4 and outer leads 5b and 6b which are exposed to outside the setting body 4; and a phosphorus-based setting accelerator and/or thiol is incorporated in an epoxy resin composition for forming the hardened body 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an optical semiconductor device in which an optical semiconductor element mounted on a lead frame is sealed with a cured body of an epoxy resin composition.

[0002]

2. Description of the Related Art Conventionally, an optical semiconductor device is manufactured by bonding an optical semiconductor element such as an LED (light emitting diode) on a die pad of a lead frame and sealing the same with a sealing material. .

Since a sealing material used for sealing such an optical semiconductor device is required to have transparency, moisture resistance and heat resistance, an epoxy material containing an epoxy resin and an acid anhydride-based curing agent is usually used. A resin composition is used.

However, when the optical semiconductor element is encapsulated with the epoxy resin composition, internal shrinkage due to curing shrinkage of the epoxy resin composition and distortion due to a difference in linear expansion coefficient between the cured body of the epoxy resin composition and the optical semiconductor element are caused. Stress is generated, and the optical semiconductor element is degraded due to the stress. For example, when the optical semiconductor element is a light emitting element, there occurs a problem that the luminance is reduced.

[0005] Therefore, for example, Japanese Patent Application Laid-Open No. H11-2693
No. 51 discloses that an epoxy resin composition contains tetra-n-
By containing a phosphorus-based curing accelerator such as butylphosphonium bromide, the adhesiveness between the cured body of the epoxy resin composition and the lead frame is reduced, thereby alleviating the internal stress and affecting the optical semiconductor element. It is described that by reducing the stress, deterioration of the optical semiconductor element can be prevented.Moreover, by incorporating thiol, moisture and flux enter the interface between the cured body of the epoxy resin composition and the lead frame. However, it is described that the lead frame can be prevented from being rusted, resulting in poor appearance, or the optical semiconductor element from being corroded.

[0006]

However, in recent years, optical semiconductor devices have been increasingly required to be used for a long period of time under severe high temperature and high humidity. Even if the accelerator and the thiol are contained, the lead frame may be rusted and the appearance may be poor after long-term use under such high temperature and high humidity.

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and it is an object of the present invention to prevent lead frames from being rusted even when used under severe high temperature and high humidity for a long period of time, and to provide an optical semiconductor device. It is an object of the present invention to provide an optical semiconductor device having excellent durability without lowering the luminance of the semiconductor device.

[0008]

In order to achieve the above object, the present invention relates to an optical semiconductor device in which an optical semiconductor element mounted on a lead frame is sealed with a cured body of an epoxy resin composition. In the lead frame, at least the optical semiconductor element is installed except for a boundary portion between a sealing portion sealed inside the cured body and an exposed portion exposed to the outside from the cured body. A silver plating layer is formed on the installation portion, and the epoxy resin composition contains a phosphorus-based curing accelerator and / or a thiol.

Further, in the present invention, the lead frame includes an inner lead portion sealed inside the cured body, and an outer lead portion exposed outside the cured body.
A die pad portion on which the optical semiconductor element is provided, and a silver plating layer may be formed on at least the die pad portion except for the boundary portion in the inner lead portion.

Further, in the present invention, the lead frame is provided with an inner lead portion sealed inside the cured body, an outer lead portion exposed outside the cured body, and the optical semiconductor element. A parabola portion, and a silver plating layer may be formed on at least the parabola portion except for the boundary portion in the inner lead portion.

[0011]

FIG. 1 is a schematic diagram showing one embodiment of an optical semiconductor device according to the present invention. 1, the optical semiconductor device 1 includes a lead frame 2, an optical semiconductor element 3 installed on the lead frame 2, and a cured body 4 for sealing the optical semiconductor element 3.

The lead frame 2 is made of copper, iron, 42 alloy or the like, and has two lead portions 5 and 6.
And a die pad portion 7 formed continuously with one lead portion 5.

The two lead portions 5 and 6 are arranged facing each other at a predetermined distance from each other along the longitudinal direction, and are inner leads as sealing portions sealed inside the cured body 4. It has portions 5a and 6a, and outer lead portions 5b and 6b as exposed portions exposed from the cured body 4 to the outside, respectively.

The die pad portion 7 is formed continuously at the tip of the inner lead portion 5a of one of the lead portions 5, and is formed in a substantially rectangular plate shape so that the optical semiconductor element 3 can be installed. Also, this die pad portion 7
And the inner lead portion 6a of the other lead portion 6 are arranged to face each other with a predetermined interval.

The optical semiconductor element 3 is, for example, an LED or a CC.
A chip such as a light emitting element such as D is mounted by die bonding to a die pad portion 7 of the lead frame 2, and its terminal portion (not shown) is connected to the inner lead portion 6 a of the other lead portion 6. Is connected via a wire 8 by wire bonding.

The cured body 4 has transparency and is formed by curing an epoxy resin composition, as described later, and the optical semiconductor element 3 installed in this manner and the leads 5 and 6 It is formed so as to cover and seal the inner lead portions 5a and 6a.

In the optical semiconductor device 1, in the lead frame 2, a boundary portion between the outer lead portions 5b and 6b of each of the lead portions 5 and 6 and the inner lead portions 5a and 6a (described later in FIGS. 1 and 2). Except for the boundary portion 9 between the inner lead portions 5a and 6a, the silver plating layer 10 (see FIG. 2) is formed on at least the die pad portion 7 and the cured body 4 is formed. The epoxy resin composition contains a phosphorus-based curing accelerator and / or a thiol in addition to the epoxy resin and the curing agent.

More specifically, in this optical semiconductor device 1, as shown in FIG. 2A, the lead portions 5 and 6 (the outer lead portions 5b and 6b and the inner lead portion 5a
And 6a), the silver plating layer 10 is not formed, and the silver plating layer 10 is formed on all of the die pads 7 including the installation portion 11 where the optical semiconductor element 3 is installed. The silver plating layer 10 can be formed by a known method such as electrolytic silver plating or electroless silver plating.

In the optical semiconductor device 1, the silver plating layer 10 is formed on the optical semiconductor element 3 in the die pad 7.
Is not particularly limited as long as it is formed on the installation portion 11 where the device is installed and is not formed on the boundary portion 9 between the inner lead portions 5a and 6a.
As shown in (b), it may be formed only in the installation portion 11 in the die pad portion 7 (that is, in the portion of the die pad portion 7 where the optical semiconductor element 3 is die-bonded, and preferably in the peripheral portion), Further, as shown in FIG. 2C, all of the die pad portions 7 and the boundary portions 9 in the inner lead portions 5a and 6a (that is, exposed from the inside of the cured body 4 in the lead portions 5 and 6 toward the outside). (In other words, a portion of the inner lead portions 5a and 6a that is continuous with the outer lead portions 5b and 6b).
May be formed on all but.

A boundary portion 9 between the inner lead portions 5a and 6a and an outer lead portion 5b and 6b
That is, the material of the lead frame 2 may be exposed as it is, or a plating layer other than the silver plating layer 10 may be formed. Examples of such a plating layer include a plating layer of tin, solder, nickel, or the like.

The epoxy resin composition for forming the cured product 4 contains an epoxy resin and a curing agent, and a phosphorus-based curing accelerator and / or a thiol. Next, the epoxy resin composition of the present invention used for forming the cured product 4 will be described in detail.

In the present invention, as the epoxy resin,
For example, nitrogen-containing epoxy resins such as bisphenol A epoxy resin, bisphenol F epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, alicyclic epoxy resin, triglycidyl isocyanurate, hydantoin epoxy resin, and water addition Bisphenol A type epoxy resin, aliphatic epoxy resin, glycidyl ether type epoxy resin, bisphenol S type epoxy resin, biphenyl type epoxy resin which is the main type of low water absorption cured type, dicyclo type epoxy resin, naphthalene type epoxy resin, etc. Is mentioned. These may be used alone or in combination. Among these, bisphenol A type epoxy resin, alicyclic epoxy resin, and triglycidyl isocyanurate are preferably used because the cured product of the epoxy resin composition is hardly discolored after the optical semiconductor element is sealed. Further, as such an epoxy resin, one having an epoxy equivalent of 100 to 1000 and a softening point of 120 ° C. or less is generally used.

In the present invention, an acid anhydride-based curing agent is particularly preferably used as the curing agent, since the cured product of the epoxy resin composition is not easily discolored.

As the acid anhydride-based curing agent, a molecular weight of 140
Preferably about 200 to about 200, for example, phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadic anhydride, nadic anhydride, Colorless to pale yellow acid anhydrides such as glutaric acid, methylhexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride are exemplified. These may be used alone or in combination. Of these,
Phthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, and methylhexahydrophthalic anhydride are preferably used.

Further, in addition to the above-described acid anhydride-based curing agents, conventionally known amine-based curing agents, phenol-based curing agents, and carboxylic acids such as hexahydrophthalic acid, tetrahydrophthalic acid, and methylhexahydrophthalic acid. And the like may be used alone or in combination.

The mixing ratio of the epoxy resin and the curing agent is, for example, when an acid anhydride curing agent is used as the curing agent, the acid anhydride of the acid anhydride is added to one equivalent of the epoxy group in the epoxy resin. It is preferable that the equivalent amount is 0.5 to 1.5 equivalents, more preferably 0.7 to 1.2 equivalents. If the acid anhydride equivalent is less than 0.5 equivalent, the hue of the cured product of the obtained epoxy resin composition after curing becomes poor, while if it exceeds 1.5 equivalent, the moisture resistance tends to decrease. May be In addition, as a curing agent, other than an acid anhydride-based curing agent, an amine-based curing agent, a phenol-based curing agent, or a curing agent such as a carboxylic acid, even when used alone or in combination, the compounding ratio is: What is necessary is just to follow the compounding ratio (equivalent ratio) of the above-mentioned acid anhydride.

In the present invention, as the phosphorus-based curing accelerator, a phosphorus-containing compound containing a halogen is preferable, and tetra-n-butylphosphonium bromide is particularly preferably used. The amount of the phosphorus-based curing accelerator is preferably 0.1 to 10 parts by weight, more preferably 0.5 to 10 parts by weight, based on 100 parts by weight of the epoxy resin composition.
5.0 parts by weight.

Further, in the epoxy resin composition of the present invention,
In the case where a phosphorus-based curing accelerator is not contained, for example, another curing accelerator may be contained as necessary. Examples of such a curing accelerator include tertiary amines, imidazoles, and quaternary ammonium. Salts and organometallic salts. These may be used alone or in combination. Of these, tertiary amines and imidazoles are preferably used. The amount of such a curing accelerator is preferably 0.05 to 7.0 parts by weight, more preferably 0.2 to 3.0 parts by weight, based on 100 parts by weight of the epoxy resin composition. Parts by weight. When the compounding amount of the curing accelerator is less than 0.05 part by weight, a sufficient curing promoting effect cannot be obtained. There are cases.

In the present invention, the thiol is n-
Alkyl thiols are preferred, and furthermore, 9-1 carbon atoms.
The n-alkyl thiol of 5 is preferable, and n-dodecyl thiol is particularly preferably used. The amount of the thiol was 0.2 parts by weight based on 100 parts by weight of the epoxy resin composition.
It is preferably from 5 to 2.0 parts by weight, and more preferably from 0.25 to 0.80 parts by weight.

The epoxy resin composition of the present invention only needs to contain at least one of a phosphorus-based curing accelerator and thiol, and necessarily contains both a phosphorus-based curing accelerator and thiol. It is not necessary. Among these, it is preferable that a thiol is contained, and it is more preferable that both a phosphorus-based curing accelerator and a thiol are contained.

Further, the epoxy resin composition of the present invention comprises:
In addition to the above-described epoxy resin, curing agent, curing accelerator and thiol, as long as the transparency of the cured body of the epoxy resin composition is not impaired, if necessary, a deterioration inhibitor, a modifier, a release agent, Various conventionally known additives such as dyes and pigments may be appropriately compounded.

Examples of the deterioration inhibitor include conventionally known deterioration inhibitors such as phenol compounds, amine compounds, organic sulfur compounds, and phosphine compounds. Further, as the denaturing agent, for example, glycols,
Conventionally known modifiers such as silicones and alcohols are exemplified. As the release agent, for example, stearic acid, behenic acid, montanic acid and metal salts thereof, polyethylene, polyethylene-polyoxyethylene,
Conventionally known release agents such as carnauba are exemplified. Among the release agents, polyethylene-polyoxyethylene is preferably used from the viewpoint of improving the transparency of the cured product of the epoxy resin composition.

When light dispersibility is required, a filler may be further added in addition to the above components. Examples of the filler include quartz glass powder, talc, silica powder, alumina powder, and inorganic fillers such as calcium carbonate.

The epoxy resin composition of the present invention
For example, it can be manufactured as follows. That is, first, the above-mentioned epoxy resin, curing agent, phosphorus-based curing accelerator and / or thiol, and if necessary, other curing accelerators, deterioration inhibitors, modifiers, dyes, pigments, fillers, and the like. At a predetermined ratio. Next, using a dry blending method or a melt blending method according to a conventional method, after appropriately mixing and kneading, cooling and pulverizing,
Tableting is further performed if necessary. Thereby, the epoxy resin composition of the present invention can be obtained in the form of a powder or, when the powder is compressed, in the form of a tablet.

The method for encapsulating an optical semiconductor device using the thus obtained epoxy resin composition of the present invention is not particularly limited. For example, a known molding method such as transfer molding is used. be able to.

Therefore, in order to obtain the optical semiconductor device 1 shown in FIG. 1, for example, first, the optical semiconductor element 3 is die-bonded to the die pad portion 7 of one of the lead portions 5, and the other lead is formed by wire bonding. After being connected to the part 6 via the wire 8, this is placed in a mold, and then the epoxy resin composition of the present invention is heated and melted, and then poured into the mold and cured.

The cured product of the epoxy resin composition of the present invention was measured at a thickness of 1 mm by a spectrophotometer.
Preferably, the light transmittance at a wavelength of 600 nm is 70% or more, particularly preferably 80% or more.

In the optical semiconductor device 1 thus obtained, the silver plating layer 10 is formed on the installation portion 11 of the die pad portion 7 where the optical semiconductor device 3 is installed. 7 can be secured, and is not formed at the boundary portion 9 of the inner lead portions 5a and 6a. Therefore, at the boundary portion 9, the cured body 4 and the lead portions 5 and 6 Good adhesiveness at the interface can be ensured. Therefore, the boundary portion 9
The lead frame 2, in particular, the inner lead portion 5 a
6a and the die pad portion 7 can be effectively prevented from being rusted to cause poor appearance, or the optical semiconductor element 3 from being corroded.

Moreover, in the optical semiconductor device 1, since the epoxy resin composition forming the cured body 4 contains a phosphorus-based curing accelerator and / or thiol, the cured body 4 and the boundary portion 9 are excluded. Inner lead portions 5a and 6
a and the adhesiveness between the die pad 7 and
Thereby, the internal stress is reduced, and the stress applied to the optical semiconductor element 3 is reduced, so that the deterioration of the optical semiconductor element 3 can be prevented.

Therefore, even when the optical semiconductor device 1 is used for a very long time under severe high temperature and high humidity, the lead frame 2 is not rusted and the brightness of the optical semiconductor element 3 is not reduced. The durability can be improved.

It can be confirmed by the stress analysis by the finite element method that the stress applied to the optical semiconductor element 3 is reduced by reducing the adhesiveness between the cured body 4 and the lead frame 2.

The optical semiconductor device of the present invention is, for example,
Instead of the die pad section 7 shown in FIG. 1, the optical semiconductor device 1 including the lead frame 2 having the parabola section 12 as shown in FIG. 3 may be used. In FIG. 3, FIG.
Are denoted by the same reference numerals.

That is, in FIG. 3, in this optical semiconductor device 1, a parabolic portion 12 is formed continuously at the tip of the inner lead portion 5a of one lead portion 5 instead of the die pad portion 7 shown in FIG. Have been. This parabola part 1
2 is formed in a substantially rectangular plate shape, and a light collecting portion 13 having a substantially hemispherical cross section (substantially circular shape in plan view) is provided on the upper surface thereof. The optical semiconductor element 3 includes
The terminal portion (not shown) is connected to the tip of the inner lead portion 6a of the other lead portion 6 via the wire 8 by wire bonding. I have. In such a parabola section 12, the light emitted from the optical semiconductor element 3 can be condensed in the condensing section 13 to further increase the luminance.

In the optical semiconductor device 1 having such a parabolic portion 12, in the lead frame 2, the outer lead portions 5b and 6b of the respective lead portions 5 and 6 and the inner lead portions 5a and 6
3 and 4 (shown as a boundary 9 between the inner lead portions 5a and 6a in FIGS. 3 and 4).
Except for the silver plating layer 1
0 (see FIG. 4), and the epoxy resin composition for forming the cured product 4 contains a phosphorus-based curing accelerator and / or a thiol in addition to the epoxy resin and the curing agent. I have.

More specifically, in this optical semiconductor device 1, as shown in FIG. 4A, the lead portions 5 and 6 (the outer lead portions 5b and 6b and the inner lead portion 5a
And 6a), the silver plating layer 10 is not formed, and the silver plating layer 10 is formed on all the parabolic portions 12 including the installation portion 11 on which the optical semiconductor element 3 is installed.

In this optical semiconductor device 1 as well, the silver plating layer 10 is formed on the installation portion 11 of the parabola portion 12 where the optical semiconductor element 3 is installed, and the inner lead portion is formed. There is no particular limitation as long as it is not formed at the boundary portion 9 between 5a and 6a. For example, as shown in FIG.
4 (that is, a portion of the parabola portion 12 where the optical semiconductor element 3 is die-bonded, and preferably a peripheral portion thereof, more specifically, FIG.
It may be formed only on the light condensing part 13) as shown in (b), or as shown in FIG. 2 (c).
2 and inner lead portions 5a and 6a
(I.e., the inner portions of the leads 5 and 6 that are exposed from the inside of the cured body 4 toward the outside, in other words, the inner leads 5).
a and 6a at outer lead portions 5b and 6b
May be formed on all portions except for the portion that is continuous with.

[0047]

EXAMPLES According to the composition shown in Table 1, each component was blended, melt-kneaded (80 to 130 ° C.) with a mixing roll, aged, cooled at room temperature and pulverized.
The epoxy resin compositions of Production Examples 1 to 6 and Comparative Examples 1 to 3 in the form of fine powder were obtained.

An optical semiconductor device GaAs (chip size: 0.3 m) installed on various lead frames shown in Table 2
m square) was sealed by transfer molding (molding condition: 150 ° C. × 4 minutes) using each of the epoxy resin compositions of Production Examples 1 to 6 and Comparative Examples 1 to 3 obtained above, Further, after-curing was performed at 120 ° C. for 16 hours to obtain Examples 1 to 6 and Comparative Example 1.
~ 3 optical semiconductor devices (package size: 4 mm)
Corner).

Then, assuming actual use conditions, the exposed portion (outer lead portion) of the lead frame of each optical semiconductor device is washed with a chlorine-based flux.
Solder plating was applied. Each of the optical semiconductor devices thus treated is supplied with a low-temperature electric current (−30 ° C./5 mA), and
The luminance retention rates with respect to the initial luminance after 00 hours, 300 hours, and 500 hours were measured. Table 2 shows the results.
Shown in

Further, for each optical semiconductor device, 85 ° C. /
The state of rust on the lead frame after storage at 85% for 500 hours was observed, and the appearance defect rate due to rust was determined. Table 2 shows the results.

Further, each optical semiconductor device was placed in a fluorescent
After leaving for a period of time while reducing the pressure with a vacuum pump, the distance of the fluorescent liquid that had entered the interface between the lead frame and the cured product was measured. Table 2 shows the results.

[0052]

[Table 1]

[0053]

[Table 2] In Example 1, as compared with Comparative Example 1, both the thiol was contained in the epoxy resin composition, so that both the luminance retention rates were good. In Example 1, the silver plating layer was formed on the lead portion. Since the appearance defect rate due to rust is 0%, the appearance defect rate due to rust is 30% in Comparative Example 1 since the silver plating layer is formed on the lead portion.
%Occurred.

In addition, in Example 2, the brightness retention was good because the epoxy resin composition contained both of the phosphorus-based curing accelerators, as compared with Comparative Example 2. Since no silver plating layer is formed on the lead portion, the appearance defect rate due to rust is 0%.
In Comparative Example 2, since the silver plating layer was formed on the lead portion, the appearance defect rate due to rust was 100%. In addition,
Since the appearance defect rate due to rust in Comparative Example 2 was 100%, whereas the appearance defect rate due to rust in Comparative Example 1 was 30%, thiol was more effective in preventing rust than phosphorus-based curing accelerators. Is large.

Further, in Example 3, since the phosphorus-based curing accelerator and the thiol were used in combination in the epoxy resin composition, the luminance retention rate was better as compared with Examples 1 and 2. Will change.

In the fourth embodiment, the lead portion is tin-plated in the third embodiment. The effect is the same as that of the fourth embodiment.

In the fifth embodiment, a parabola-type lead frame (corresponding to FIG. 3) is used.
In the parabolic type, the lead portion was tin-plated, and the effect was as good as in Example 1.

In Comparative Example 3, the silver plating layer was not formed on the lead portion, but the epoxy resin composition did not contain a phosphorus-based curing accelerator and thiol, so that the luminance retention was low, and 7 defective appearance rate due to rust
0% occurred.

[0059]

As described above, in the optical semiconductor device of the present invention, since the silver plating layer is formed on the installation portion where the optical semiconductor element is installed in the lead frame, the lead frame of the optical semiconductor element is provided. It is possible to secure good adhesiveness at the interface between the cured body and the sealing portion of the lead frame at the boundary portion, since it is possible to secure good die bonding to the substrate and not to be formed at the boundary portion. Can be. Therefore, it is possible to prevent moisture or flux from entering the boundary portion, and the lead frame may be rusted, resulting in poor appearance,
Alternatively, corrosion of the optical semiconductor element can be effectively prevented.

In addition, in this optical semiconductor device, the epoxy resin composition forming the cured product contains the phosphorus-based curing accelerator and / or thiol.
By reducing the adhesiveness between the sealing portion and the installation portion of the lead frame excluding the boundary portion, thereby alleviating the internal stress and reducing the stress applied to the optical semiconductor device, Deterioration can be prevented.

Therefore, even if this optical semiconductor device is used for a very long time under severe high temperature and high humidity, the lead frame does not rust and the brightness of the optical semiconductor element does not decrease. Sex can be expressed.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing an embodiment (die pad type) of an optical semiconductor device of the present invention.

FIG. 2 is a schematic configuration diagram showing a portion where a silver plating layer is formed in the optical semiconductor device shown in FIG. 1;
(A) is an embodiment formed on all of the die pad portions, (b) is an embodiment formed only on the installation portion of the die pad portion, (c) is an entire die pad portion,
Also, an aspect is shown that is formed on all but the boundary portion in the inner lead portion.

FIG. 3 is a schematic configuration diagram showing another embodiment (parabolic type) of the optical semiconductor device of the present invention.

FIG. 4 is a schematic configuration diagram showing a portion where a silver plating layer is formed in the optical semiconductor device shown in FIG. 3;
(A) is an embodiment formed in all the parabolic parts,
(B) is a mode formed only on the installation part (light collecting part) in the parabola part, and (c) is a mode formed on all of the parabola part and all but the boundary part in the inner lead part. Is shown.

DESCRIPTION OF SYMBOLS 1 Optical semiconductor device 2 Lead frame 3 Optical semiconductor element 4 Cured body 5, 6 Lead part 5 a, 6 a Inner lead part 5 b, 6 b Outer lead part 7 Die pad part 9 Boundary part 10 Silver plating layer 11 Installation part 12 Parabola section

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/48 (72) Inventor Satoshi Okuda 1-2-1, Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation (72) Inventor Katsumi Shimada 1-1-2 Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation (72) Inventor Masato Noro 1-2-1, Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation F Terms (reference) 4J036 AA01 DA01 DA02 DA05 DA06 DB05 DD02 DD07 JA07 4M109 AA01 BA01 CA01 CA21 DA02 DA07 EA02 EA03 EB02 EB04 EB08 EB09 EB18 EC02 EC11 FA02 FA04 GA01 5F041 AA34 AA44 DA17 DA18 DA26 DA29 DA44

Claims (3)

[Claims] 1. An optical semiconductor device in which an optical semiconductor element installed on a lead frame is sealed with a cured body of an epoxy resin composition, wherein the lead frame includes a sealed inside of the cured body. A silver plating layer is formed on at least an installation portion where the optical semiconductor element is installed, except for a boundary portion between a sealing portion to be stopped and an exposed portion exposed to the outside from the cured body, and An optical semiconductor device, wherein the epoxy resin composition contains a phosphorus-based curing accelerator and / or a thiol. 2. The lead frame includes: an inner lead portion sealed inside the cured body; an outer lead portion exposed to the outside of the cured body; and a die pad portion on which the optical semiconductor element is installed. With the exception of the boundary portion in the inner lead portion,
The optical semiconductor device according to claim 1, wherein a silver plating layer is formed on at least the die pad portion. 3. The lead frame includes an inner lead portion sealed inside the hardened body, an outer lead portion exposed outside the hardened body, and a parabolic portion on which the optical semiconductor element is installed. With the exception of the boundary portion in the inner lead portion,
The optical semiconductor device according to claim 1, wherein a silver plating layer is formed on at least the parabolic portion.