JP2002350248A - Temperature measurement device and temperature measurement method using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature measurement device and a temperature measurement method using it capable of directly measuring the temperature of a wafer in a manufacturing process of a semiconductor device using vacuum or low-pressure plasma, and obviating the need to install a special facility in a process device without being affected by high-frequency noise caused by the plasma or heat generation caused by a plasma active reaction, and without generating particles or metal pollution in the measurement. SOLUTION: Plural rectangular-solid thin film structures 2 formed of positive type photoresist and having a width of 200 μm, a length of 500 μm and a thickness of 1,000 nm are mounted on a base material 1 formed of a silicon wafer, and a lid body 3 is mounted on the base material 1 through a cushioning film 4. On the back surface of the lid body 3, recessed parts 3a each having a length of 3 mm, a width of 3 mm and a depth of 50 μm are formed at positions matching to the structures 2. Since the shape of each structure 2 is irreversibly changed depending on temperature, the temperature can be measured by measuring the film thickness of the structure 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature measuring device and a temperature measuring method for measuring a temperature of a silicon wafer in a process of manufacturing a semiconductor device such as an LSI, and more particularly, to a method for measuring the temperature of a silicon wafer.
The present invention relates to a temperature measuring device and a temperature measuring method for measuring the temperature of a silicon wafer in a manufacturing process using vacuum or reduced pressure plasma such as VD, sputtering, etching, and ashing.

[0002]

2. Description of the Related Art LSI (large scale integrated circu)
it: large-scale integrated circuit) manufacturing process, especially in vacuum
It is important to accurately control the wafer temperature during the process. For example, the deposition rate and film quality in CVD and the etching rate and etching shape in an etching process strongly depend on the wafer temperature.

For this reason, conventionally, in a process performed in a vacuum or a reduced-pressure plasma, various methods have been adopted for measuring the wafer temperature during the processing. As the simplest method, there is a method in which the temperature of a susceptor holding a wafer is measured with a thermocouple or the like, and this is regarded as the wafer temperature. In addition, by directly joining a thermocouple to the surface of the wafer,
It is also possible to measure the temperature of the wafer surface.

Further, a method is also known in which a thermolabel is attached to the surface of a wafer, and the temperature of the wafer during processing is recorded by a change in color.

Further, Japanese Patent Application Laid-Open No. Hei 10-111186 discloses a radiation thermometer for measuring radiation infrared rays emitted from a wafer for the purpose of non-contact measurement of a wafer temperature from outside a process chamber. There is disclosed a technique for measuring a wafer temperature by using a conventional technique.

Further, for example, “Solid State
Technology (Solid State Technology) 1999/1
[0 page 99-page 106] describes the fluorescence relaxation characteristic of the phosphor, that is, the light is emitted upon receiving light of a specific wavelength, for the purpose of non-contact measurement of the wafer temperature from outside the process chamber. A measurement method utilizing the property that the time required for fluorescence decay of a fluorescent substance changes depending on the ambient temperature is described.

[0007]

However, the above-mentioned prior art has the following problems. For a method of measuring the temperature of a susceptor holding a wafer with a thermocouple or the like, and regarding this susceptor temperature as a wafer temperature,
In vacuum or reduced pressure plasma, the thermal conductivity between the wafer and the susceptor is low, and the heat capacity of the susceptor is large,
CVD in wafer temperature and susceptor or reduced pressure plasma
(Chemical vapor deposition) and other processes such as film formation, etching, and ashing produce differences between the temperatures and the susceptor temperature does not always accurately reflect the wafer temperature. Therefore, when the susceptor temperature is regarded as the wafer temperature, there is a problem that a large error is generated between the susceptor temperature and the actual wafer temperature.

In the method of directly bonding a thermocouple to the surface of a wafer, high-frequency noise due to plasma is parasitic on a measurement lead of the thermocouple in a reduced-pressure plasma, and heat is generated on the surface of the thermocouple by a plasma activation reaction. Therefore, there is a problem that it is difficult to accurately measure the wafer temperature. In addition, unnecessary particles (particles) are generated because the thermocouple contacts the wafer surface.
There is a problem that the constituent material of the thermocouple is sputtered by the plasma and metal contamination occurs in the process equipment. Since the generation of particles and metal contamination causes a serious decrease in yield in an LSI mass production factory, the above method cannot be used.

The method of attaching a thermo label to the wafer surface and measuring the temperature of the wafer during the process by changing the color of the thermo label also causes particles and metal contamination as in the above-described method of bonding a thermocouple to the wafer surface. There is a problem.

As for the technology for measuring the temperature of the wafer by measuring the radiated infrared rays emitted from the wafer, a special optical system such as an optical fiber and a mirror is provided in the process apparatus in order to guide the radiated infrared rays to the outside of the process apparatus. Is required, and there is a problem that the cost of the process apparatus is increased. Further, it is difficult to install a measuring instrument at a position where the entire surface of the wafer can be seen, so that it is difficult to measure the in-plane distribution of the wafer temperature.

As for the measurement method using the fluorescence relaxation characteristic of the phosphor, a special optical system such as an optical fiber and a mirror for guiding the fluorescence to the outside of the process apparatus is used similarly to the above-mentioned method using the infrared radiation. Required. Further, it is difficult to install a measuring instrument at a position where the entire surface of the wafer can be seen, so that it is difficult to measure the in-plane distribution of the wafer temperature. In addition, there is a problem that when the phosphor is attached to the wafer or the susceptor, particles and metal contamination occur as in the method using a thermocouple.

SUMMARY OF THE INVENTION The present invention has been made in view of such a problem, and in a semiconductor device manufacturing process using vacuum or reduced-pressure plasma, it is possible to directly measure the temperature of a wafer and obtain high-frequency noise caused by plasma. In addition, it is not affected by heat generated by the plasma activation reaction, does not generate particles and metal contamination at the time of measurement, and does not require special equipment in the process equipment, and can easily measure the in-plane distribution of the wafer temperature. It is an object to provide a temperature measuring device and a temperature measuring method using the same.

[0013]

According to the present invention, there is provided a temperature measuring apparatus comprising: a base material; and a thin film formed on the base material by a polymer material in a predetermined shape, the shape being irreversibly changing depending on temperature. Wherein the temperature experienced by the substrate is recorded due to the irreversible shape change of the thin film.

In the present invention, since the shape of the thin film changes irreversibly depending on the temperature, the temperature experienced by the temperature measuring device can be measured by measuring the change in the shape. For this reason, this temperature measurement device is installed in the process device to be measured, and after operating this process device, the temperature measurement device is taken out and the change in the shape of the thin film is measured. The temperature reached by the device can be measured. At this time, if the temperature measuring device is installed in the process device at a position where the wafer is arranged at the time of manufacturing the semiconductor device, the temperature at which the wafer is held during the operation of the process device can be directly measured. In addition, since an electric signal and an optical signal are not used for measurement, accurate measurement can be performed without being adversely affected by high frequency and radiation even when used in plasma. Furthermore, since the thin film can be provided at a plurality of locations on the substrate, the shape change of the thin film can be measured simultaneously at a plurality of positions on the substrate, and the in-plane distribution of the substrate temperature can be measured. . Furthermore, since there is no need to add special equipment to the process apparatus, the present invention can be applied to existing process apparatuses as they are.

Further, the temperature measuring device is mounted on the base material so as to be able to conduct heat with the base material, and is provided so as to cover the thin film without contacting the thin film. Can be provided.

Thus, the thin film comes into contact with the plasma, such as thinning of the thin film due to etching, ashing, sputtering, etc., deposition of a substance by CVD, and change in thin film shape caused by ultraviolet rays, electron irradiation, ion bombardment, etc. Can be prevented from being affected. In addition, the lid may be fixed to the base material.

Furthermore, it is preferable that the base material is formed by processing a silicon wafer or a silicon wafer. The lid is preferably formed of silicon or quartz glass, and the thin film is preferably formed of any one of a positive photoresist, a negative photoresist, and polyimide.

As a result, it is possible to prevent particles and metal contamination harmful to LSI manufacturing from occurring in the process apparatus to be measured. In addition, since a single-crystal silicon wafer has good thermal conductivity, by using this for a base material and a lid, the susceptor disposed at the lower part of the temperature measurement device and the plasma disposed at the upper part Heat transfer to the thin film can be accurately reproduced.

Further, the lid is preferably mounted on the base material via a buffer film made of a polymer material, and the buffer film is made of one of a positive photoresist, a negative photoresist and a polyimide. Preferably, it consists of a seed.

Thus, it is possible to prevent generation of particles due to direct contact between the base and the lid. Further, since the contact area between the base material and the lid can be increased by the buffer film, the flow of heat between the base material and the lid can be ensured well.

Incidentally, as the material constituting the thin film, an optimum material can be appropriately selected according to the temperature range to be measured. Further, the thin film may be made of a plurality of materials that are deformed in different temperature ranges. Thereby, the temperature measuring device can be used in a wider temperature range.

A temperature measuring method according to the present invention comprises the steps of: installing a temperature measuring device having a thin film made of a polymer material whose shape changes irreversibly depending on temperature on a substrate at a desired temperature measuring position. And a step of measuring the shape of the thin film when the shape changes due to an ambient temperature in the temperature measuring device.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to the accompanying drawings. First, a first embodiment of the present invention will be described. FIG. 1 is a schematic cross-sectional view illustrating the configuration of the temperature measurement device according to the present embodiment.

First, a method of manufacturing the temperature measuring device of the present embodiment will be described with reference to FIG. On the back surface of the p-type silicon wafer, a vertical length of 3 m
A plurality of rectangular parallelepiped concave portions 3a having a width of 3 mm and a width of 3 mm and a depth of 50 μm are formed. Further, a substrate 1 made of another p-type silicon wafer is prepared, and a positive photoresist is applied on the substrate 1 by spin coating to form a positive photoresist film having a thickness of about 1000 nm. Next, this positive photoresist film is patterned by a photolithography method using a stepper device, and a width of 200 μm and a length of 500 μm is formed on the surface of the base material 1.
Plural thin film structures 2 having a rectangular planar shape of μm
And the buffer film 4 surrounding the thin film structure 2 are simultaneously formed. At this time, the number of the thin film structures 2 formed on the substrate 1 and the number of the concave portions 3a formed on the lid 3 are made equal, and the thin film structures 2 are formed.
The concave portion 3a is formed at a position where the lid 3 is aligned with the cover 3 when the lid 3 is mounted on the base material 1 in a later step. When the cover 3 is mounted on the base material 1, the buffer film 4 is formed in a region of the base material 1 that matches a wall region partitioning the recess 3 a on the back surface of the cover 3. Next, the lid 3 is mounted on the base material 1 such that the wall region partitioning the concave portion 3a on the back surface of the lid 3 and the buffer film 4 are aligned. Next, the wall region of the lid 3 and the buffer film 4 are brought into contact with each other and joined. Thereby, the evaluation wafer 5 which is the temperature measuring device of the present embodiment is formed. At this time, the lid 3 is weakly bonded to the base material 1 by the positive photoresist constituting the buffer film 4. The positive photoresist is, for example, TSMR89 manufactured by Tokyo Ohka.
00 and OFPR800 are used.

As shown in FIG. 1, a substrate 1 made of single-crystal p-type silicon is provided on an evaluation wafer 5.
On the surface of, for example, consists of a positive photoresist,
200 μm width, 500 μm length, 1000 n thickness
A plurality of m-shaped rectangular thin film structures 2 are provided. A buffer film 4 made of a positive photoresist is provided on the surface of the base material 1. The buffer film 4 has an opening 4a having a planar shape of, for example, a square having a side of 3 mm. 2 are provided. Further, a lid 3 having a recess 3a at a position corresponding to the opening 4a on the buffer film 4.
The cover 3 is mounted on the base material 1 via the buffer film 4 and is weakly bonded to the substrate 1. Lid 3 is made of single crystal p
It is composed of mold silicon. The concave portion 3 a is provided on the back surface of the lid 3, that is, on the surface facing the substrate 1, and has a rectangular parallelepiped shape of, for example, 3 mm long, 3 mm wide and 50 μm deep. I haven't. Therefore, the thin film structure 2 is arranged in a space formed by the concave portions 3 a and the opening portions 4 a, that is, a space surrounded by the base material 1, the cushioning material 4, and the lid 3. The base 1 is larger than the lid 3 when viewed from a direction perpendicular to the surface of the base 1 on which the thin film structure 2 is provided.

Next, the operation of the evaluation wafer 5 of this embodiment will be described. When the evaluation wafer 5 is heated, first, the temperatures of the lid 3 and the substrate 1 exposed to the external environment rise.
Since the silicon wafer forming the lid 3 and the base material 1 has good thermal conductivity in the thickness direction, the temperature of the thin film structure 2 also rises following the lid 3 and the base material 1, And substrate 1
It is almost the same temperature as At this time, the thin film structure 2
Changes irreversibly depending on the temperature. Specifically, the photoresist constituting the thin film structure 2 causes a cross-linking reaction by heating and contracts, and as a result, the volume of the thin film structure 2 decreases. Since the thickness of the thin film structure 2 is smaller than the width and the length, a change in the thickness of the thin film structure 2 can be approximately regarded as a change in volume.

Next, a temperature measurement method using the temperature measurement apparatus (evaluation wafer 5) of the present embodiment will be described. First, a method for calibrating the temperature of the evaluation wafer 5 will be described. A thermo label (not shown) is attached to a portion (not shown) of the evaluation wafer 5 where the lid 3 is not provided. next,
The evaluation wafer 5 is placed in, for example, an etching apparatus (not shown), and argon plasma processing is performed. The temperature of the evaluation wafer 5 is adjusted by a high-frequency power for generating plasma and a temperature for cooling the susceptor (chiller temperature), and is set to a predetermined temperature in a range of, for example, 80 to 240 ° C. in thermolabel display. The plasma processing time is 3 minutes.

After the plasma processing, the evaluation wafer 5 is taken out of the etching apparatus, and the film thickness at the central portion of the thin film structure 2 is measured by an optical interference type film thickness measuring device. This operation is repeated while changing the temperature of the evaluation wafer 5. FIG. 2 is a graph showing the relationship between the display temperature of the thermolabel and the film thickness of the thin film structure 2 with the horizontal axis representing the display temperature of the thermolabel and the vertical axis representing the film thickness of the thin film structure 2. FIG. 2 also shows, for comparison, the film thickness of the thin film structure 2 on the evaluation wafer 5 not subjected to the plasma processing. 1 before plasma treatment
The film thickness of the thin film structure 2 of 030 nm decreases as the plasma processing temperature increases, and becomes, for example, about 970 nm at 140 ° C. and about 870 nm at 220 ° C. In addition,
At 240 ° C., the thickness of the film cannot be measured because the positive type photoresist constituting the thin film structure 2 deteriorates.

The temperature calibration using the above-described thermolabel may be performed only once. Thereafter, by using the result shown in FIG. 2 obtained by this temperature calibration, the temperature of the evaluation wafer 5 during the plasma processing is measured by measuring the film thickness of the thin film structure 2 without using a thermo label. Can be measured. However, each constituent member of the evaluation wafer 5,
In particular, when the shape or size of the thin film structure 2 is changed, it is necessary to newly perform temperature calibration.

Next, a method of measuring the temperature using the evaluation wafer 5 will be described. First, the film thickness of the thin film structure 2 on the evaluation wafer 5 is measured by a light interference type film thickness measuring device. Next, the evaluation wafer 5 is set at a position where a silicon wafer is to be placed at the time of processing a silicon wafer in a process apparatus (not shown) that is to be measured. Next, the process device is operated to perform a predetermined process. For example, if this process device is an etching device, the etching process is performed under normal conditions. After the processing, the processing apparatus is stopped, the evaluation wafer 5 is taken out, the thickness of the thin film structure 2 is measured, and compared with the thickness before the processing. The result is compared with the data shown in FIG. 2 to measure the temperature experienced by the evaluation wafer 5 during the processing. Since the change in the film thickness of the thin film structure 2 depends not only on the heating temperature but also on the heating time, the processing time for the temperature calibration is equal to the processing time for measuring the temperature, for example, the etching time. Preferably, they are equal.

As described above, according to the present embodiment, it is possible to measure the temperature at which the wafer reaches in the processing apparatus. In this embodiment, the temperature of the wafer can be directly measured, and is not affected by the high frequency and the radiated light by the plasma, so that the measurement can be performed with high accuracy. In addition, since the evaluation wafer 5 of the present embodiment includes the lid 3, the thin film structure 2 is not etched, and the thickness of the thin film structure 2 can be accurately measured. Further, since there is no need to add special equipment to the process device, the present invention can be applied to any process device. Furthermore, since the thin film structure 2 can be formed at any position on the substrate 1, the in-plane distribution of the wafer temperature can be easily measured.

Further, since the substrate 1 is a silicon wafer, the lid 3 is a processed silicon wafer, and the thin film structure 2 and the buffer film 4 are made of a positive photoresist, Metal contamination can be prevented. In addition, since the buffer film 4 is made of a soft photoresist having high heat conductivity, the generation of particles due to the direct contact between the substrate 1 and the lid 3 is prevented, and the substrate 1 and the lid 3 are separated from each other. The contact area between them increases, and the heat flow between them can be improved.

In the present invention, an unpatterned photoresist film is used in place of the thin film structure 2 and the buffer film 4, and the change in the thickness of the photoresist film is measured to obtain an evaluation wafer. The temperature experienced by 5 may be measured. According to this method, the first
As compared with the embodiment, the step of patterning the photoresist film to form the thin film structure 2 and the buffer film 4 can be omitted.

Next, a second embodiment of the present invention will be described. FIG. 3 is a schematic cross-sectional view illustrating the configuration of the temperature measuring device according to the present embodiment. FIG. 4 is a partial plan view showing the configuration of the thin film structure 9 before temperature measurement in the temperature measurement device according to the present embodiment. As shown in FIG. 3 and FIG. 4, instead of the thin film structure 2 in the first embodiment, for example, the evaluation wafer 6 which is the temperature measuring device of the present embodiment has a width of 2 μm and a length of 300 μm. A thin film with a thickness of 1000 nm patterned in a strip shape (hereinafter referred to as line 7)
And a gap having a width of 2 μm (hereinafter, referred to as a space 8) are provided alternately, and the thin film structure 9 is provided. That is, the lines 7 are periodically arranged in a line on the surface of the substrate 1. The number of repetitions of the line 7 is, for example, 10 to 100. The manufacturing method of the evaluation wafer 6 and the configuration other than the thin film structure 9 in the evaluation wafer 6 are the same as those of the evaluation wafer 5 in the first embodiment.

Next, a method for calibrating the temperature of the evaluation wafer 6 will be described. As in the first embodiment, the evaluation wafer 6
Then, a thermo label (not shown) is set, the evaluation wafer 6 is set in an etching apparatus (not shown), and argon plasma processing is performed. The temperature of the evaluation wafer 6 is adjusted by the high-frequency power and the chiller temperature, and is set to a predetermined temperature in the range of, for example, 80 to 240 ° C. by thermo label display.
The plasma processing time is 3 minutes.

After the plasma processing, the evaluation wafer 6 is taken out of the etching apparatus, and the ratio (L / L) of the width L of the line 7 to the width S of the space 8 is measured by a microscope equipped with a wavelength measuring function.
Measure S). This is repeated by changing the temperature of the evaluation wafer 6. FIG. 5 is a graph showing the relationship between the display temperature of the thermolabel and the (L / S) ratio in the thin-film structure 9 by taking the display temperature of the thermolabel on the horizontal axis and the (L / S) ratio on the vertical axis. FIG. FIG. 5 also shows the (L / S) ratio of the evaluation wafer 6 not subjected to the plasma processing for comparison. Before the plasma processing, the (L / S) ratio is 1.0, but as the plasma processing temperature increases, the (L / S) ratio increases. That is, the width L of the line 7 increases, and the width S of the space 8 decreases. For example, when the temperature is 140 ° C., the (L / S) ratio is 1.4, and when the temperature is 220 ° C., the (L / S) ratio is 2.7. The reason for this is that the photoresist film is softened with heating, and the shape of the line 7 becomes dull. Since the increase in the width of the line 7 due to this droop exceeds the decrease in the width of the line 7 due to the decrease in the volume of the photoresist film, the (L / S) ratio increases with heating.

Next, a method of measuring the temperature using the evaluation wafer 6 will be described. First, the (L / S) ratio of the thin film structure 9 on the evaluation wafer 6 is measured with a microscope having a wavelength measurement function. Next, the evaluation wafer 6 is set at a position where a silicon wafer is to be arranged at the time of processing a silicon wafer in a process apparatus (not shown) that is to be measured. Next, the process device is operated to perform a predetermined process.
After the processing, the process apparatus is stopped, the evaluation wafer 6 is taken out, and the (L / S) ratio of the thin film structure 9 is measured and compared with the value before the processing. The result is compared with the data shown in FIG. 5, and the temperature reached by the evaluation wafer 6 during the processing is measured.

As described above, according to the present embodiment, it is possible to measure the temperature at which the wafer reaches in the processing apparatus. In this embodiment, the temperature of the wafer can be directly measured, and the temperature of the wafer can be measured with high accuracy because the temperature of the wafer is not affected by the high frequency and the emitted light due to the plasma. Further, since the evaluation wafer 6 of the present embodiment includes the lid 3, the thin film structure 9 is not etched, and the thickness of the thin film structure 9 can be measured with high accuracy. Furthermore,
Since there is no need to add special equipment to the process equipment,
Applicable to any process equipment. Furthermore,
Since the thin film structure 9 can be formed at any position on the substrate 1, the in-plane distribution of the wafer temperature can be easily measured.

Further, since the substrate 1 is a silicon wafer, the lid 3 is a processed silicon wafer, and the thin film structure 2 and the buffer film 4 are made of a positive photoresist, Metal contamination can be prevented. In addition, since the buffer film 4 is made of a soft photoresist having high heat conductivity, the generation of particles due to the direct contact between the substrate 1 and the lid 3 is prevented, and the substrate 1 and the lid 3 are separated from each other. To increase the contact area between
It is possible to improve the flow of heat between the lid and the lid 3.

Further, in the above-described first embodiment, in order to measure the temperature experienced by the evaluation wafer 5, it is necessary to measure the film thickness of the thin film structure 2 using an optical film thickness meter. . In contrast, in the present embodiment, the temperature experienced by the evaluation wafer 6 can be measured by measuring the (L / S) ratio of the thin film structure 9 using a microscope having a wavelength measurement function. . For this reason, it becomes possible to measure the temperature with simpler equipment.

In this embodiment, as in the first embodiment, the temperature can be measured by measuring the change in the thickness of the thin film structure 9. in this case,
Since the width of the line 7 on the evaluation wafer 6 is smaller than the width of the thin film structure 2 on the evaluation wafer 5, the film thickness of the line 7 can be measured not by an optical film thickness meter but by a three-dimensional shape measuring device. For this reason, the film thickness of the line 7 can be measured with simpler equipment than in the case of using an optical film thickness meter. In this embodiment, the width of the line 7 before heating is 2 μm and the length is 300 μm.
m, width of space 8 is 2 μm, line 7 and space 8
Has been described as an example where the number of repetitions is 10 to 100, but the present invention is not limited to these numerical values, and any value can be adopted so that the measurement of the (L / S) ratio becomes easy. .

In the first and second embodiments, since the thin film structures 2 and 9 are formed of a positive photoresist material, the measurement temperature range is about 80 to 220 ° C., but the thin film structures are more heat resistant. The evaluation wafer can be used in a temperature range of 200 to 400 ° C. by being formed of a photosensitive polyimide material having high property. Such photosensitive polyimide materials include, for example, CRC-8000 manufactured by Sumitomo Bakelite and HD-8000 manufactured by Hitachi Chemical.

[0043]

As described in detail above, according to the present invention,
In a semiconductor device manufacturing process using vacuum or reduced pressure plasma, the temperature of a wafer can be directly measured without being affected by high frequency noise caused by plasma and heat generated by plasma activation reaction. Further, in the temperature measuring device and the temperature measuring method of the present invention, there is no need to provide special equipment in the process device without generating particles and metal contamination during measurement.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a configuration of a temperature measuring device according to a first embodiment of the present invention.

FIG. 2 is a graph showing a relationship between a display temperature of a thermo label and a film thickness of a thin film structure 2.

FIG. 3 is a schematic sectional view illustrating a configuration of a temperature measuring device according to a second embodiment of the present invention.

FIG. 4 is a partial plan view showing the configuration of the thin film structure 9 before temperature measurement in the temperature measurement device according to the present embodiment.

FIG. 5 shows the display temperature of the thermolabel and the (L) of the thin film structure 9;
/ S) is a graph showing the relationship with the ratio.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1; Base material 2; Thin film structure 3; Lid 3a; Recess 4; Buffer film 4a; Opening 5; Evaluation wafer 6; Evaluation wafer 7; Line 8; Space 9;

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shingo Sumie 1-5-5 Takatsukadai, Nishi-ku, Kobe City, Hyogo Prefecture Inside Kobe Research Institute, Kobe Steel Ltd. (72) Inventor Yasuhide Nakai Takatsuka, Nishi-ku, Kobe City, Hyogo Prefecture No. 1-5-5 Genesis Technology Co., Ltd. F-term (reference) 2F056 UZ05 UZ10 2H096 AA25 BA01 BA09 CA05 LA16 LA30 4M106 AA01 CA70 DH14

Claims (14)

[Claims] 1. An irreversible shape of a thin film, comprising: a base material; and a thin film formed on the base material by a polymer material into a predetermined shape, the shape being irreversibly changing depending on temperature. A temperature measurement device, wherein the temperature experienced by the substrate is recorded by the change. 2. The temperature measuring device according to claim 1, wherein the thin film is made of a plurality of types of materials having different temperature ranges in which the shape change occurs. 3. A lid mounted on the substrate so as to conduct heat between the substrate and the substrate, the lid provided to cover the thin film without contacting the thin film. The temperature measuring device according to claim 1 or 2, wherein the temperature is measured. 4. The temperature measuring device according to claim 1, wherein the substrate is formed by processing a silicon wafer or a silicon wafer. 5. The temperature measuring device according to claim 3, wherein the lid is made of silicon or quartz glass. 6. The temperature measuring device according to claim 3, wherein the lid is mounted on the base material via a buffer film made of a polymer material. 7. The temperature measuring apparatus according to claim 1, wherein the thin film is made of any one of a positive photoresist, a negative photoresist, and polyimide. 8. The method according to claim 1, wherein the buffer film is a positive photoresist,
The temperature measuring device according to claim 6, wherein the temperature measuring device is made of one of a negative photoresist and a polyimide. 9. The thin film according to claim 1, wherein the thin film has a pattern shape including a plurality of lines arranged in parallel with each other and a space between the lines. Temperature measuring device. 10. A step of installing a temperature measuring device having a thin film made of a polymer material whose shape changes irreversibly depending on temperature on a base material at a desired temperature measuring position; Measuring the shape of the thin film when the shape changes due to the ambient temperature. 11. The temperature measurement according to claim 10, wherein the thin film is covered with a lid capable of conducting heat with the base material when the temperature is being measured by the temperature measurement device. Method. 12. The temperature measurement method according to claim 10, wherein a change in the shape of the thin film is measured by a change in a cross-sectional shape of the thin film. 13. The method according to claim 12, wherein the change in the shape of the thin film is measured by a change in the thickness of the thin film.
Temperature measurement method described in. 14. The thin film has a pattern shape composed of a plurality of lines arranged in parallel with each other and a space between the lines, and a change in the shape of the thin film depends on the width of the line and the space. The temperature measurement method according to claim 10, wherein the temperature is measured by a change in a ratio to a width of the temperature.