JP2002348353A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an epoxy resin composition excellent in reliability such as soldering heat resistance, adhesion and the like, and molding properties such as filling properties in molding, curing properties and the like. SOLUTION: The epoxy resin composition comprises an epoxy resin (A), a curing agent (B) and a filler (C), where the epoxy resin (A) contains an epoxy resin (a) represented by chemical formula (I) and an epoxy resin (b) represented by chemical formula (II) and the filler (C) accounts for 85-96 wt.% in the whole resin composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition which is excellent in moldability, reflow resistance, and continuous moldability, and is particularly suitable for semiconductor encapsulation.

[0002]

2. Description of the Related Art Epoxy resins are excellent in heat resistance, moisture resistance, electrical properties, adhesiveness, etc., and can be added with various properties by blending and prescription, so that they are used as industrial materials such as paints, adhesives, and electrical insulating materials. Have been.

For example, as a method of sealing an electronic circuit component such as a semiconductor device, a hermetic seal made of metal or ceramic and a resin seal made of phenol resin, silicone resin, epoxy resin or the like have been conventionally proposed. The resin used for such sealing is called a sealing resin. Among them, resin sealing with an epoxy resin is most actively performed in terms of balance between economy, productivity and physical properties. The sealing method using an epoxy resin is generally performed by using a composition in which a curing agent, a filler, and the like are added to an epoxy resin, setting the semiconductor element in a mold, and sealing by a transfer molding method or the like. Have been done.

[0004] The characteristics required of the epoxy resin composition for semiconductor encapsulation include reliability and moldability.
Moisture resistance etc. as reliability, fluidity as moldability,
Hardness when heated, burrs, etc. are listed.

[0005] The term "moisture resistance" as used herein means that when a resin-sealed semiconductor is left in a high-temperature, high-humidity environment, moisture enters through an interface between the sealing resin and the sealing resin and the lead frame. To prevent the semiconductor from breaking down,
In recent years, the degree of integration of semiconductors has been improved, and higher moisture resistance has been required.

Recently, the density and automation of mounting a semiconductor device package on a printed circuit board have been advanced, and the semiconductor device package has been mounted on the surface of the board instead of the conventional "insertion mounting method" in which lead pins are inserted into holes in the board. "Surface mounting method" for soldering has become popular. Along with this, the semiconductor device package has been changed from the conventional DIP (dual in-line package) to a thin FPP (flat plastic package) suitable for high-density mounting and surface mounting.
Package). Among them, recently,
With the advance of fine processing technology, TSO with a thickness of 2mm or less
P, TQFP and LQFP are becoming mainstream. Therefore, it becomes more susceptible to external influences such as humidity and temperature, and reliability such as solder heat resistance, high temperature reliability, and heat resistance becomes more and more important in the future.

In surface mounting, mounting is usually performed by solder reflow. In this method, a semiconductor device package is placed on a substrate, and the semiconductor device package is exposed to a high temperature of 200 ° C. or more, and the solder previously applied to the substrate is melted to adhere the semiconductor device package to the substrate surface. In such a mounting method, since the entire semiconductor device package is exposed to high temperatures, if the moisture resistance of the sealing resin is poor, the absorbed moisture explosively expands at the time of solder reflow, and a crack occurs. Therefore, moisture resistance is very important in the sealing resin for semiconductors.

Further, in recent years, lead-free solder containing no lead has been used from the viewpoint of environmental protection. Lead-free solders have a high melting point, which increases the reflow temperature, so that higher solder heat resistance and moisture resistance are required.

On the other hand, there has been a movement to shorten the molding time in order to improve the production efficiency, and there has been a demand for even more curability than before.

In general, it is known that increasing the proportion of the filler in the sealing resin is effective for improving the solder heat resistance. This is because the moisture resistance is improved and the water absorption is reduced by reducing the resin component in the sealing resin.
However, when the proportion of the filler in the sealing resin is increased, there is a problem that the fluidity is extremely deteriorated, and problems such as unfilled package and stage shift occur.

As a means for improving the reflow resistance, it has been proposed to incorporate a tetramethylbisphenol F-type epoxy resin (Japanese Patent Application Laid-Open No. 8-134138). It has been demanded.

[0012]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the epoxy resin composition and to provide a resin composition having excellent reliability such as solder heat resistance and excellent moldability such as adhesion and curability. And a semiconductor device sealed with the epoxy resin composition.

[0013]

SUMMARY OF THE INVENTION The present inventors have achieved the above object by using an epoxy resin having a specific structure and further increasing the ratio of a filler in a sealing resin. It has been found that an epoxy resin composition conforming to the formula (1) can be obtained, and the present invention has been achieved.

The present invention mainly has the following configuration. That is, an epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and a filler (C), wherein the epoxy resin (A) is an epoxy resin represented by the chemical formula (I) (A1) and only the epoxy resin (a2) represented by the chemical formula (II), and the epoxy resin (a1)
Is 10 to 90% by weight in the epoxy resin (A) and 10 to 90% by weight in the epoxy resin (A)
An epoxy resin composition, which is blended and has a blending ratio of the filler (C) of 85 to 96% by weight of the entire resin composition. An epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and a filler (C), wherein the epoxy resin (A) has the following chemical formula (I)
An epoxy resin (a1) represented by the following chemical formula (II), and an epoxy resin (a2) represented by the following chemical formula (II)
Biphenyl novolak type epoxy resin (a
An epoxy-based resin composition containing only 3) and wherein the compounding ratio of the filler (C) is 85 to 96% by weight of the entire resin composition. An epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and a filler (C), wherein the epoxy resin (A) is represented by the following chemical formula (I): It contains a resin (a1) and an epoxy resin (a2) represented by the following chemical formula (II), does not contain a dicyclopentadiene-type epoxy resin, and has a compounding ratio of the filler (C) of the entire resin composition. 85-
An epoxy resin composition characterized by being 96% by weight. ".

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.

The present invention is an epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and a filler (C).

In the present invention, the epoxy resin (A) is a tetramethylbiphenyl epoxy resin (a1) represented by the chemical formula (I) and a tetramethylbisphenol F epoxy resin (a2) represented by the chemical formula (II). Contains as an essential component. By containing the epoxy resin (a1), the curability of the sealing resin composition is increased, and the moldability is greatly improved. However, when the epoxy resin (a1) is used alone, the resin viscosity increases, and sufficient package filling properties cannot be obtained. Further, the adhesion to the chip surface is not sufficient.

[0018]

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[0019]

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On the other hand, by containing the epoxy resin (a2), the solder heat resistance is improved and the reliability is improved.
Further, the viscosity of the sealing resin composition is reduced, and the moldability is improved. However, the curability is insufficient when the epoxy resin (a2) is used alone.

In the present invention, the epoxy resin (a1)
It has been found that an extremely excellent effect can be obtained by using the epoxy resin and the epoxy resin (a2) together. That is, only when the epoxy resin (a1) and the epoxy resin (a2) are used together, a resin composition excellent in all of reliability, adhesion, curability, and moldability can be obtained.

The content of the epoxy resin (a1) in the epoxy resin (A) is preferably 5 to 95% by weight, more preferably 10 to 90% by weight. Further, the content of the epoxy resin (a2) in the epoxy resin (A) is preferably 95 to 5% by weight, and more preferably 90 to 10% by weight. Further, the epoxy resin (A) is preferably composed of only the epoxy resin (a1) and the epoxy resin (a2). In this case, the mixing ratio of the epoxy resin (a1) to the epoxy resin (a2) is (a1) by weight. / (A2) = 10 / 90-90
/ 10 is preferable, and 20/80 to 80 is more preferable.
/ 20 is good.

In some applications, the epoxy resin (a1)
Epoxy resins other than and (a2) may be used in combination.
Other epoxy resins are not particularly limited as long as they are compounds having two or more epoxy groups in one molecule, and include all monomers, oligomers, and polymers. For example, cresol novolak type epoxy resin, phenol novolak type epoxy resin, 4,4'-bis (2,3-epoxypropoxy) biphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5 Biphenyl type epoxy resin such as 5,5'-tetraethylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetrabutylbiphenyl, phenol aralkyl type epoxy resin, naphthalene type An epoxy resin, a bisphenol A type epoxy resin, a triphenol type epoxy resin, an epoxy resin having a dicyclopentadiene skeleton, a triphenylmethane type epoxy resin, and a halogenated epoxy resin are exemplified. Two or more epoxy resins may be used. Among them, the biphenyl novolak type epoxy resin (a3) represented by the formula (V) is preferably used as the third epoxy resin component. When three types of the epoxy resin (a1), the epoxy resin (a2) and the epoxy resin (a3) are used, a preferable mixing ratio is (a1) and (a2) in a weight ratio of (a3) to the total amount of (a3). (A1) + (a2)) / (a3) =
90/10 to 10/90 are preferable, and 90/10 to 50/50 are more preferable. Even when these three types are used, the mixing ratio of the epoxy resin (a1) to the epoxy resin (a2) is (a1) / weight ratio.
(A2) = 10/90 to 90/10 is preferable, and 20/80 to 80/20 is more preferable.

[0024]

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In the present invention, the amount of the epoxy resin (A) is usually 2 to 25% by weight, especially 2
-10% by weight is preferred.

The curing agent (B) in the present invention is not particularly limited as long as it reacts with the epoxy resin (A) and cures. Specific examples thereof include phenol novolak, cresol novolak, naphthol novolak and the like. Novolak resin, phenol aralkyl resin,
Biphenyl skeleton-containing phenol aralkyl resin, dicyclopentadiene skeleton-containing phenol resin, naphthol aralkyl resin, bisphenol compounds such as bisphenol A, maleic anhydride, phthalic anhydride, acid anhydrides such as pyromellitic anhydride and metaphenylenediamine, diamino Examples thereof include aromatic amines such as diphenylmethane and diaminodiphenylsulfone. These may be used alone, or two or more curing agents may be used in combination.

As the curing agent (B), a phenol aralkyl resin is particularly preferably used from the viewpoint of reflow reliability.

In the present invention, the compounding amount of the curing agent (B) is usually 1.5 to 6.0% by weight based on the whole resin composition. Further, the mixing ratio of the epoxy resin (A) and the curing agent (B) is such that the chemical equivalent ratio of (B) to (A) is 0.5 to 1.3, particularly 0, from the viewpoint of mechanical properties and moisture resistance. .6
It is preferably in the range of 1.0 to 1.0.

In the present invention, the epoxy resin (A)
A curing catalyst may be used to accelerate the curing reaction between the curing agent and the curing agent (B). The curing catalyst is not particularly limited as long as it promotes the curing reaction. For example, 2-methylimidazole,
Imidazole compounds such as 2,4-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-heptadecylimidazole, triethylamine, benzyldimethylamine, α-methylbenzyl Methylamine, 2- (dimethylaminomethyl) phenol,
Tertiary amine compounds such as 2,4,6-tris (dimethylaminomethyl) phenol, 1,8-diazabicyclo (5,4,0) undecene-7, zirconium tetramethoxide, zirconium tetrapropoxide, tetrakis (acetylacetate) Organometallic compounds such as nato) zirconium, tri (acetylacetonato) aluminum and triphenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri (p-
Methylphenyl) phosphine, tri (nonylphenyl)
Organic phosphine compounds such as phosphine are exemplified.
Among them, an organic phosphine compound is preferable from the viewpoint of reliability and moldability, and triphenylphosphine is particularly preferably used.

Two or more of these curing catalysts may be used in combination depending on the application, and the compounding amount is preferably in the range of 0.1 to 10 parts by weight based on 100 parts by weight of the epoxy resin (A).

As the filler (C) in the present invention, an inorganic filler is preferable. Specifically, amorphous silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate ,
Metal oxides such as titanium oxide and antimony oxide, asbestos, glass fibers and glass spheres, and the like,
Among them, amorphous silica is preferably used because it has a large effect of lowering the linear expansion coefficient and is effective in reducing the stress. As the shape, a crushed shape or a spherical shape is used, and a spherical shape is preferably used from the viewpoint of fluidity.

The amorphous silica referred to here generally means one having a true specific gravity of 2.3 or less. In the production of amorphous silica, quartz is generally produced by melting quartz (fused silica), but it does not necessarily have to go through a molten state, and a known production method can be used. Synthesis methods from various raw materials, such as a method of melting silica, a method of oxidizing metal silicon, and a hydrolysis of alkoxysilane, can be used.

Regarding the particle size and particle size distribution of the filler,
Although not particularly limited, the average particle diameter (mean means median diameter; hereinafter the same) from the viewpoint of fluidity and reduction of burrs during molding.
Is particularly preferably in the range of 5 to 30 μm. Further, two or more kinds of fillers having different average particle sizes or different particle size distributions can be combined.

In the present invention, the proportion of the filler (C) needs to be 85 to 96% by weight based on the whole resin composition. If the amount of the filler (C) is less than 85% by weight, the hygroscopicity of the sealing resin tends to increase, and good solder heat resistance cannot be obtained. On the other hand, if it exceeds 96% by weight, the adhesiveness and the package filling property are reduced.

In order to avoid the problem of soft errors in the obtained semiconductor device, the concentration of α-ray emitting substances such as uranium and thorium in the epoxy resin composition is extremely low, specifically, 10 ppb or less. Is preferred.

In the present invention, a coupling agent such as a silane coupling agent and a titanium coupling agent can be blended. More preferably, the filler is treated with these coupling agents before blending with other components. As the coupling agent, a silane coupling agent is preferably used, and as the silane coupling agent,
A hydrolyzable group such as an alkoxy group, a halogen atom and an amino group and an organic group directly bonded to a silicon atom, and a partial hydrolyzed condensate thereof are generally used. As the organic group in the silane coupling agent, a hydrocarbon group substituted by a nitrogen atom, an oxygen atom, a halogen atom, a sulfur atom, or the like is used. Specific examples of the silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ- (2,3-epoxycyclohexyl) propyltrimethoxysilane, and γ-glycidoxypropylmethyldimethoxysilane. (N-phenylamino) propyltrimethoxysilane, γ- (N-phenylamino) propylmethyldimethoxysilane, γ-
(N-methylamino) propyltrimethoxysilane, γ
-(N-methylaminopropyl) methyldimethoxysilane, γ- (N-ethylamino) propyltrimethoxysilane, γ- (N-ethylamino) propylmethyldimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ- (N-ethylamino) propylmethyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane,
γ-mercaptopropylmethyldimethoxysilane, N-β
-(Aminoethyl) -γ-aminopropyltrimethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, N-β- (aminoethyl)
-Γ-aminopropyltriethylsilane, γ-aminopropyltriethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldimethoxysilane, γ
-(N, N-dimethylamino) propyltrimethoxysilane and the like.

In order to obtain good continuous moldability, the silane coupling agent preferably contains an amino group-containing silane coupling agent or an epoxy group-containing silane coupling agent, more preferably an amino group-containing silane coupling agent. Is good.

The content of the epoxy group-containing silane coupling agent or the amino group-containing silane coupling agent is particularly preferably at least 50% by weight based on the whole silane coupling agent.

It is preferable to add 0.1 to 2% by weight of the coupling agent based on the total amount of the epoxy resin composition from the viewpoint of fluidity and filling property.

In the epoxy resin composition of the present invention, although not an essential component, a bromo compound can be blended for the purpose of improving flame retardancy. The bromine compound is not particularly limited as long as it is usually added as a flame retardant to the epoxy resin composition. Preferred specific examples of the brominated compound include brominated bisphenol A type epoxy resins, brominated epoxy resins such as brominated phenol novolak type epoxy resins, brominated polycarbonate resins, brominated polystyrene resins, brominated polyphenylene oxide resins,
Examples thereof include tetrabromobisphenol A and decabromodiphenyl ether. Among them, brominated epoxy resins such as brominated bisphenol A type epoxy resin and brominated phenol novolak type epoxy resin are particularly preferable from the viewpoint of moldability.

Similarly, the epoxy resin composition of the present invention may contain an antimony compound, which is not an essential component. This is usually added as a flame retardant aid to the epoxy resin composition for semiconductor encapsulation, and is not particularly limited, and a known one can be used. Preferred specific examples of the antimony compound include antimony trioxide, antimony tetroxide, and antimony pentoxide.

When these flame retardants and flame retardant auxiliaries are added,
From the viewpoint of easy disposal of unnecessary substances generated from the epoxy resin composition and reliability of the semiconductor device, halogen atoms such as Br (bromine) and Cl (chlorine) are contained in the entire epoxy resin composition by 0.1%. It is preferable that the content is not more than% by weight. Further, the content of Sb (antimony) atoms is preferably 0.05% by weight or less based on the whole composition. The epoxy resin composition of the present invention can further optionally contain the following various additives. Various colorants and various pigments such as carbon black and iron oxide, various elastomers such as silicone rubber, olefin copolymer, modified nitrile rubber, modified polybutadiene rubber,
Various thermoplastic resins such as silicone oil and polyethylene, surfactants such as fluorine and silicone, long chain fatty acids, metal salts of long chain fatty acids, esters of long chain fatty acids, amides of long chain fatty acids and paraffin wax Release agents, ion scavengers such as hydrotalcites, and crosslinking agents such as organic peroxides.

The epoxy resin composition of the present invention is preferably produced by melt-kneading the above components. For example, it is manufactured by mixing various raw materials by a known method such as a mixer and then melt-kneading using a known kneading method such as a Banbury mixer, a kneader, a roll, a single-screw or twin-screw extruder and a co-kneader. As the resin temperature during melt-kneading, a range of usually 70 to 150 ° C. is used.

The epoxy resin composition of the present invention is melted by heating and kneading, cooled and further pulverized, the shape of a tablet obtained by compressing the powder, the tablet melted by heating and kneading and cooled and solidified in a mold. Can be used in the form of pellets which are melted by heat kneading, extruded and further cut.

From these shapes, semiconductor elements are sealed to manufacture a semiconductor device. The epoxy resin composition of the present invention is applied to a member having a semiconductor fixed to a substrate at, for example, 120 to 250 ° C., preferably 150 to 20 ° C.
The semiconductor device is molded at a temperature of 0 ° C. by a method such as transfer molding, injection molding, or casting, and is sealed with a cured product of the epoxy resin composition.
If necessary, additional heat treatment (for example, 150 to 200
C., 2-16 hours).

[0046]

EXAMPLES The present invention will now be described in detail with reference to examples, but the present invention is not limited to the examples.

[Examples 1 to 11 and Comparative Examples 1 to 8] The raw materials used in the present invention and the amounts to be added to the compositions are as follows. <Filler> Spherical fused silica having an average particle diameter of about 15 μm (compounding amounts are shown in Table 1) <Epoxy resin I> Tetramethylbisphenol type epoxy resin represented by the chemical formula (I) (epoxy equivalent 19
3) (Blending amount is described in Table 1)

[0048]

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<Epoxy resin II> Tetramethylbisphenol F type epoxy resin represented by the chemical formula (II) (epoxy equivalent 192) (compounding amounts are described in Table 1)

[0050]

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<Epoxy Resin III> Biphenyl novolak type epoxy resin of the following chemical formula (V) wherein R0 is a hydrogen atom and n = 1.8 (Nippon Kayaku Co., Ltd. "NC-3000S",
Epoxy equivalent 282), ICI viscosity (150 ° C) 0.0
9)

[0052]

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<Epoxy resin IV> Dicyclopentadiene type epoxy resin (Dainippon Ink & Chemicals, Inc. HP72)
0 "HP7200", epoxy equivalent 260), <Epoxy resin V> brominated epoxy resin (ESB400T, Sumitomo Chemical Co., Ltd., epoxy equivalent 400), <curing agent I> phenol aralkyl represented by chemical formula (III) Resin (hydroxyl equivalent 175, ICI viscosity (150
° C) 90 mPa · S) (Table 1 shows the compounding amount)

[0054]

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<Curing Agent II> A phenol novolak resin represented by the chemical formula (IV) (hydroxyl equivalent 107, ICI viscosity (150 ° C.) 250 mPa · S) (compounding amounts are shown in Table 1)

[0056]

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<Silane coupling agent I> N-phenylaminopropyltrimethoxysilane <silane coupling agent II> γ-aminopropyltrimethoxysilane <silane coupling agent III> γ-glycidoxypropyltrimethoxysilane <silane Coupling agent IV> γ-mercaptopropyltrimethoxysilane <Curing accelerator> Triphenylphosphine (Blending amount: 0.1% by weight based on resin composition) <Flame retardant aid> Antimony trioxide <Colorant> Carbon Black (Blending amount: 0.2% by weight based on resin composition) <Release agent> Carnauba wax (Blending amount: 0.3% by weight based on resin composition) Epoxy resin, curing agent and filler are listed in Table. After the components are dry blended with a mixer at the composition ratio (weight ratio) shown in No. 1 and the other components are in the above-mentioned mixing amounts, the rolls are rolled. After 5 min heating kneaded with a mixing roll surface temperature of 90 ° C., cooled to obtain a epoxy resin composition for semiconductor encapsulation and pulverized.

[0058]

[Table 1]

The evaluation of the obtained epoxy resin composition was performed by the following method.

<Evaluation of Solder Heat Resistance> Using this resin composition, a package was molded using a low-pressure transfer molding machine under the conditions of a mold temperature of 175 ° C. and a cure time of 1 minute. As a chip for evaluation, a simulation element having a surface coated with a silicon nitride film was mounted, and the chip size was 10 mm × 10 mm ×
0.3mm 176pin LQFP (Outer diameter: 24mm ×
24 mm x 1.4 mm, frame material: copper) was used.

The 176 pin LQ obtained by the above molding
After 20 FP packages were post-cured at 180 ° C. for 6 hours, they were humidified at 85 ° C./60% RH for 24 hours. After heat-treating this in an IR reflow furnace at a temperature of 260 ° C. for 10 seconds, the number of external cracks generated in the sample was examined. Was observed from the chip surface using an ultrasonic flaw detector. Excluding defective packages where peeling has occurred,
The number of successfully obtained packages was determined.

<Evaluation of Adhesion> 1
20 packages of 76 pin LQFP at 180 ° C, 6
After post curing under the condition of time, 85 ° C / 60% R
H was humidified for 24 hours. After heat-treating this in an IR reflow furnace at a temperature of 260 ° C. for 10 seconds, peeling from the chip surface was observed using an ultrasonic flaw detector. The number of successfully obtained packages, excluding the defective packages from which peeling occurred, was determined.

<Evaluation of Package Filling Property> Twenty 176-pin LQFP packages obtained by the above-mentioned molding were visually observed and cut in cross section after molding, and then observed using a microscope with a magnification of 20 times to examine whether the stage was displaced or not filled. The number of successfully obtained packages, excluding defective packages in which stage displacement and unfilling occurred, was determined.

<Evaluation of Breakage of Runner (Curability)> Ten runners obtained by the above molding were visually observed after molding, and the presence or absence of breakage of the runner was examined. The number of successfully obtained runners, excluding defects in which the runners adhered to the mold or were broken, was determined. Here, the runner means a path of the resin from the tablet to the package at the time of molding, and the cross section of the runner is 2 mm × 1.5 mm and the length is 25 mm.

<PCT (High Temperature Reliability) Evaluation> 44 pin P
Using a mold for LCC (outer size: 16 mm × 16 mm × 2.4 mm, frame material: 42 alloy), a package was molded with a low-pressure transfer molding machine at a mold temperature of 175 ° C. and a cure time of 1 minute. At this time, a chip was used in which aluminum wiring (wiring width 8 μm, wiring interval 8 μm) was provided for four circuits per chip for circuit disconnection evaluation. Eight of these packages were molded and 143 ° C / 10
After humidification at 0% RH, the disconnection is determined when the resistance between the electrodes of the semiconductor circuit wiring becomes twice the initial value, and the time when the percentage of the disconnected portion reaches 63.5% is defined as the failure time. did. Practically, it is desirable that the time is 1000 hours or more.

<Evaluation of Continuous Formability (Package Surface Dirt)> The package was formed in the same manner as described above, and the continuous formability was evaluated. However, the cure time was 40 seconds. One-shot molding was performed with a melamine resin for mold cleaning, and then two-shot molding was performed with a mold-releasing material "TR-4" manufactured by Toray to restore mold and resin releasability. Subsequently, the package appearance after continuous 10-shot molding with the above resin composition was observed, and the continuous moldability was evaluated. Dirt on the surface of the package is visually observed. If the area of the package surface reaches 3% or more of the package surface, x indicates that the area is less than 3% and 2% or more. The product was judged in four steps of ◎.

<Flame Retardancy Test> 5 ″ × 1/2 ″ × 1/1
A 6 ″ combustion test piece was molded under the conditions of 175 ° C. and a cure time of 90 seconds. After post-curing at 175 ° C. for 4 hours, the flame retardancy was evaluated according to UL94 standard.

[0068]

[Table 2]

Table 2 shows the evaluation results. As shown in Table 2, the epoxy resin composition of the present invention is excellent in solder heat resistance, adhesiveness, package filling property, and curability.

On the other hand, when the proportion of the filler is low, the moisture resistance is low, and the solder heat resistance and the adhesion are inferior. When the proportion of the filler is high, the solder heat resistance is good, but the package filling property is particularly poor and the adhesion is inferior. Also,
In the case of using only a tetramethylbisphenyl-type epoxy resin as the epoxy resin, the sealing resin composition has a high viscosity, so that the package filling property is poor and the adhesion is poor. In the case of using only the tetramethylbisphenol F type epoxy resin, runner breakage occurs due to insufficient curability. Furthermore, it is understood that the evaluation result is inferior when the dicyclopentadiene type epoxy resin is contained.

As described above, it can be seen that sufficient performance is exhibited only when the proportion of the filler and the type of the epoxy resin are satisfied.

[0072]

As described above, according to the present invention, in addition to the reliability such as solder heat resistance and the moldability such as fluidity and curability, a resin composition having excellent adhesion to a lead frame, and A semiconductor device sealed with the epoxy resin composition can be obtained.

────────────────────────────────────────────────── ─── of the front page continued (51) Int.Cl. ⁷ identification mark FI theme Court Bu (reference) C08L 63/00 C08L 101/04 101/04 C08K 5/54 H01L 23/29 H01L 23/30 R 23/31 F-term (Reference) 4J002 BC11U CC03Z CC04Z CC05Z CC27Z CD05W CD05X CD06Y CD12U CE00Z CG03U CH07U DE077 DE127 DE137 DE147 DE237 DJ007 DJ017 DJ027 DJ037 DJ047 DL007 ED078 EJ036 EJ058 EJ058 EL136 EL1464 076 076 EX0160 FD079 FD076 FD079 EX2160FD AA05 AA06 AD05 AD07 AD08 AF06 AF10 DB05 DB07 DB20 DB22 DB30 DC03 DC10 DD04 DD05 FA03 FA05 FA13 FB01 FB07 FB08 FB11 FB12 GA28 JA07 4M109 AA01 BA01 CA21 EA02 EA03 EB02 EB06 EC05 EC09 EC20

Claims (8)

[Claims] An epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and a filler (C),
The epoxy resin (A) contains only the epoxy resin (a1) represented by the chemical formula (I) and the epoxy resin (a2) represented by the chemical formula (II), and the epoxy resin (a)
1) is 10 to 90% by weight in the epoxy resin (A) and 10 to 90% by weight of the epoxy resin (a2) in the epoxy resin (A), and the compounding ratio of the filler (C) is the total amount of the resin composition. 85 to 96% by weight of the epoxy resin composition. Embedded image Embedded image 2. An epoxy resin composition comprising an epoxy resin (A), a curing agent (B) and a filler (C),
The epoxy resin (A) is an epoxy resin (a1) represented by the following chemical formula (I), an epoxy resin (a2) represented by the following chemical formula (II), and a biphenyl novolak type epoxy represented by the following chemical formula (V) It contains only the resin (a3) and the compounding ratio of the filler (C) is 8% of the whole resin composition.
5 to 96% by weight of the epoxy resin composition. Embedded image Embedded image Embedded image 3. An epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and a filler (C),
The epoxy resin (A) contains an epoxy resin (a1) represented by the following chemical formula (I) and an epoxy resin (a2) represented by the following chemical formula (II), and contains a dicyclopentadiene type epoxy resin. An epoxy resin composition characterized in that the mixing ratio of the filler (C) is 85 to 96% by weight of the whole resin composition. Embedded image Embedded image 4. The epoxy resin composition according to claim 1, wherein the curing agent (B) contains a compound represented by the following formula (III). Embedded image 5. The composition according to claim 1, wherein the content of Br atoms is equal to 0.1 with respect to the whole composition.
The epoxy resin composition according to any one of claims 1 to 4, wherein the content is 1% by weight or less. 6. The composition according to claim 1, wherein the content of Sb atom is 0.1 to the whole composition.
The epoxy resin composition according to any one of claims 1 to 5, wherein the content is not more than 05% by weight. 7. A silane coupling agent (D) is further blended, and the silane coupling agent (D) contains at least one selected from an amino group-containing silane coupling agent and an epoxy group-containing silane coupling agent. The epoxy resin composition according to any one of claims 1 to 6, wherein 8. A semiconductor device sealed with a cured product of the epoxy resin composition according to claim 1.