JP2002343711A - System and method for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To ensure highly accurate chemical processing by eliminating the difference in the concentration of chemical on the surface being treated. SOLUTION: Vibration or turbulence is imparted at least partially to developer ejected onto a substrate being processed by supplying fresh developer constantly onto the substrate being processed using a developer nozzle 120 comprising a nozzle 121 for ejecting developer to the substrate being processed and a nozzle 123 for sucking chemical on the substrate being processed, heating the substrate by means of a heater 125, and jetting rinse liquid forcibly from a vibration/turbulence imparting nozzle.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method in a semiconductor manufacturing process, an exposure mask manufacturing process, a liquid crystal device manufacturing process, and the like, and more particularly, to a process in which a photoresist is coated and a predetermined pattern is exposed. Related to developing technology.

[0002]

2. Description of the Related Art A wet process is widely used as a processing technique of a substrate in a manufacturing process of a semiconductor device or a liquid crystal display. In particular, in the development processing after exposing the photosensitive resin film, the paddle method has been actively studied.

[0003] In the conventional paddle method, a chemical solution is supplied from a chemical solution supply unit disposed above a substrate while rotating the substrate to be processed. However, the discharge pressure of the chemical solution and the per unit area at the center and periphery of the substrate are increased. It is very difficult to make the supply amount of the chemical solution uniform, and it is very difficult to obtain uniform processing accuracy in the plane. In addition, as the development proceeds, dissolved products and low-concentration developer are generated as by-products. In general, it is considered that dissolved products or a developer having a reduced concentration have an effect of inhibiting the dissolution of the photosensitive resin film, and they are generated with a distribution according to the pattern density in the substrate, and then the substrate is rotated. Therefore, the conventional paddle method cannot obtain uniform in-plane processing accuracy due to the uneven movement around the substrate under the force of centrifugal force or the like.

[0004] Therefore, Patent Publication 2000-306809.
In the technique described in the official gazette (Japanese Patent Application No. 11-113660), a method for minimizing the movement of the developer during development has also been proposed. In this method, the developer whose concentration is high or low due to the density of the pattern hardly moves in the horizontal direction, so that the dissolved product or the developer whose concentration is low does not affect the surroundings. In addition, the difference in the amount of the dissolved product and the change in the concentration at the place where they are generated is maintained as it is, resulting in a dimensional difference due to the pattern density.

[0005]

As described above, since the replacement of the developing solution, which also utilizes the liquid on the surface to be processed, is rarely performed, especially when a dense / dense pattern exists, the developing process is performed during development. There is a problem that the pattern size is different due to the difference in the concentration of the liquid and the difference in density of the pattern, and a highly accurate pattern cannot be obtained.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of eliminating a difference in concentration of a chemical solution on a surface to be processed and performing high-precision chemical solution processing.

[0007]

Means for Solving the Problems [Configuration] The present invention is configured as follows to achieve the above object.

(1) A substrate processing apparatus according to the present invention comprises: a substrate holding mechanism for holding a substrate to be processed substantially horizontally; and a substrate holding mechanism opposed to a surface to be processed of the substrate to be processed. A chemical solution discharge / suction unit having a chemical solution discharge / suction unit having a chemical solution discharge opening for discharging a liquid, and a chemical solution suction opening for sucking a chemical solution on the substrate to be processed; A movement mechanism for relatively horizontally moving the substrate to be processed; and a vibration / vibration / vibration / turbulence flow for at least a part of a liquid film of the chemical liquid discharged from the chemical liquid discharge / suction unit onto the substrate to be processed. And a turbulence adding mechanism.

Preferred embodiments of the present invention are described below. (a) in the chemical solution discharge / suction mechanism, the chemical solution discharge opening and the chemical solution suction opening, in the relative horizontal movement direction,
One or more pairs of second chemical liquid discharge openings are provided so as to be sandwiched therebetween and discharge a second chemical liquid different from the chemical liquid discharged from the chemical liquid discharge opening to the surface to be processed.

(B) The vibration / turbulence applying mechanism is a heating mechanism for heating at least one of the substrate to be processed and a chemical solution discharged onto the substrate to be processed. The heating mechanism includes a window provided on a surface of the chemical solution discharge / suction unit facing the substrate to be processed, and at least one of the substrate to be processed and a chemical solution on the substrate to be processed via the window. A light source for irradiating light. The heating mechanism is provided to face a surface of the substrate to be processed opposite to a surface to be processed,
A light source for irradiating light to the substrate to be processed is provided.

(C) The vibration / turbulence applying mechanism is constituted by a plurality of convex portions arranged and formed on a surface of the chemical solution discharge / suction unit facing the surface to be processed of the substrate to be processed. The protrusions are arranged in a straight line or in a mottled shape. At least a part of the plurality of projections is formed in a square or smooth shape.

(D) The vibration / turbulence adding mechanism is an ultrasonic vibrator installed in the chemical solution discharge / suction unit.

(E) The vibration / turbulence applying mechanism is configured such that the surface of the chemical solution discharge / suction unit facing the surface of the substrate to be processed has two or more types of surface states having different contact angles with the chemical solution. That (f) The wettability of a part of the surface of the chemical solution discharge / suction unit facing the surface to be processed of the substrate to be processed to the chemical liquid is made more hydrophilic than the wettability of the surface of the substrate to be processed to the chemical solution. Be composed of surface conditions.

(G) A chemical liquid heating function is provided in a transport path for supplying a chemical liquid to the chemical liquid discharge opening.

(H) The vibration / turbulence adding mechanism is a chemical / gas discharge opening for discharging a chemical or gas, which is disposed at least one or more between the chemical discharge opening and the chemical suction opening. .

In the substrate processing method according to the present invention, a chemical liquid is continuously applied to a substrate whose processing surface is held substantially horizontally from a chemical liquid discharge opening of a chemical liquid discharge / suction unit. The chemical liquid discharge / suction unit is configured to discharge the chemical liquid on the surface to be processed while continuously discharging the chemical liquid from the chemical liquid suction opening arranged in the chemical liquid discharge / suction unit adjacent to the chemical liquid discharge opening. What is claimed is: 1. A substrate processing method for performing a chemical treatment on a surface to be processed while relatively horizontally moving a substrate to be processed, wherein the chemical solution discharge opening is provided between the chemical solution discharge / suction unit and the surface to be processed. The gap in the region between the suction opening and the suction opening is characterized in that fresh chemical is always supplied and vibration, convection or turbulence is caused to the chemical on the surface to be processed.

[Operation] The present invention has the following operation and effects by the above configuration.

A method of processing a substrate by discharging a chemical liquid from a chemical liquid discharge port and bringing a nozzle having a function of sucking a chemical liquid from a chemical liquid suction port close to a substrate to be processed is used, for example, in a developing step after exposure of a photosensitive resin film. When applied, a pattern is formed as development proceeds, so that a step occurs on the substrate to be processed. In particular, at a step having a large aspect ratio, it is very difficult to flow the dissolved products and the like accumulated between the patterns when the flow of the developer is laminar.

By causing vibration or turbulent flow in at least a part of the chemical liquid film existing between the main surface of the substrate to be processed and the nozzle surface facing thereto, liquid replacement or the like is efficiently caused, and dimensional fluctuations due to pattern density. Can be expected, and it is possible to achieve higher precision in film processing.

[0020]

Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIGS. 1 and 2 are diagrams showing a schematic configuration of a substrate processing section in a substrate developing apparatus according to a first embodiment of the present invention. FIG. 1A is a plan view showing a configuration of a substrate processing unit in the substrate developing apparatus, FIG. 1B is a cross-sectional view taken along the line AA ′ in FIG. 1A, and FIG. B-
It is sectional drawing of B 'part.

As shown in FIGS. 1 and 2, on a substrate holder (substrate holding mechanism) 111, a substrate 100 on which an exposed photosensitive resin film 102 is formed on the surface of a Si wafer 101 is placed. . The substrate to be processed 100 is chucked to the substrate holder 111 by vacuum suction.

A developing nozzle (chemical solution discharging / suctioning mechanism) 1 having a developing solution discharge nozzle 121, a chemical solution suction nozzle 123, and a rinse solution discharge nozzle 124 above the substrate holder 111.
20 are arranged. In order to measure the gap between the lower surface of the nozzle 120 and the substrate 100 to be processed, the developing nozzle 120 has a gap measuring mechanism 1 using, for example, a laser length measuring device.
13 are provided. Further, at both ends of the developing nozzle 120, a gap adjusting mechanism 114 having, for example, a piezo element is provided to adjust the gap between the lower surface of the nozzle 120 and the substrate 100 to be processed according to the gap measuring mechanism 113. The gap adjusting mechanism 114 is the moving mechanism 1
15 supported. The moving mechanism 115 moves the gap adjusting mechanism 114 and the developing nozzle 120 relatively horizontally with respect to the substrate holder 111.

The discharge of the chemical solution is performed by pressurizing the inside of a canister connected to a pipe and storing the chemical solution. The suction of the chemical solution is performed by operating a pump connected to the pipe.

An auxiliary plate 112 that can move up and down is provided around the substrate holder 111. The upper surface of the auxiliary plate 112 is provided to ascend to the same height as the surface of the substrate 100 to be processed, and when the developing nozzle 120 sucks the chemical solution, the suction force is equally applied in the surface of the substrate 100 to be processed. . It is preferable to select a material for the auxiliary plate 112 such that the wettability between the surface and the surface of the semiconductor wafer is substantially the same. Specifically, the contact angle of the developer on the semiconductor wafer and the contact angle of the developer on the auxiliary plate 112 are made substantially the same.

FIG. 3 shows the developing nozzle 120 described above.
This will be described in more detail with reference to FIG. As shown in FIG. 3, the developing nozzle 120 is provided with a developing solution discharge nozzle 121 for supplying a developing solution to the surface of the substrate 100 to be processed and a rinsing solution (pure water). ) Are provided so as to sandwich one or more pairs of vibration / turbulence adding nozzles 122 (two pairs in the figure) 122 that vigorously discharge the nozzles. A pair of rinsing liquids provided between the pair of chemical liquid suction nozzles 123 and the pair of chemical liquid suction nozzles 123 for sucking the chemical liquid (developer + rinse liquid) on the processing surface, and discharging the rinsing liquid to the surface to be processed. An ejection nozzle 124 is provided. Each of the nozzles 121 facing the processing surface of the processing substrate 100,
Chemicals (developer, rinse) from the outlets of 122 and 124
Are discharged, and the liquid medicine is sucked from the liquid medicine suction nozzle 123.

The nozzles 121 to 12 provided on the surface of the developing nozzle 120 facing the surface to be processed 100
The opening 4 has a long side in a direction perpendicular to the moving direction and a short side in a direction parallel to the moving direction, and the long side has a length equal to or larger than the maximum diameter of the wafer.

The developing solution is supplied to the developing solution discharge nozzle 121 through a drain structure 121c for temporarily storing the developing solution between the piping 121a of φ3 mm, the piping 121b of φ0.3 mm, and the two pipings 121a and 121b. You. Also,
φ 0.3 mm pipe 121 b and developer discharge nozzle 121
A liquid reservoir 121d for uniformly diffusing the developing solution in the longitudinal direction of the developing solution discharge nozzle is provided between them. Pipes 121a, 121 of the developer discharge nozzle 121
b, a heater 125 for heating is provided in the drain structure portion 121c and the liquid reservoir 121d. Further, it is preferable that the material of the developing solution discharge nozzle 121 is a material that does not cause thermal deformation or the like by the heater 125.

On the lower surface of the developing nozzle in the area where the opening of the vibration / turbulence adding nozzle 122 is formed, a height of about 70 μm is provided.
A convex portion 126 having a sharpness of about m is formed. Convex part 12
A plurality of extremely fine vibration / turbulent flow addition nozzles 122 are formed adjacent to the depressions where no 6 is formed.

The rinsing liquid discharge nozzle 124 is disposed so as to sandwich the chemical liquid suction nozzle 123 so that the rinsing liquid covers the periphery of the area where the developing liquid flows.

The sharp convex portion 126 disturbs the flow of the developing solution, and further sprays the liquid from the nozzle for fine vibration / turbulence addition onto the surface of the substrate 100 to be processed, so that the liquid is directly below the developing nozzle 120. It is possible to efficiently disrupt the flow of the developer.

The distance between the lower surface of the nozzle 120 and the substrate to be processed was set to about 100 μm.

The flow rate and the discharge time of the developer from the developer discharge nozzle 121, the flow rate and the suction time by the chemical solution suction nozzle 123, the vibration / turbulence addition nozzle 122,
The discharge flow rate of the rinse liquid from the rinse liquid discharge nozzle 124
Discharge time, moving speed of developing nozzle 120, heater 125
Is controlled by a control system (not shown).

Next, a specific method for supplying the developing solution onto the wafer will be described. First, an Si wafer 101 having a photosensitive resin film 102 such as a resist formed on a base film to be processed is exposed through a chromium mask by a KrF excimer stepper to form a latent image on the photosensitive resin film 102.

The substrate to be processed 100 is mounted on a substrate holder 111.
After that, the developing nozzle 120 capable of supplying the liquid to the entire surface of the substrate 100 to be fixed and held by the vacuum chuck is moved to the initial position above the end. The upper surface of the auxiliary plate 112 was flush with the upper surface of the substrate to be processed.

The developing solution discharge flow rate from the developing solution discharge nozzle 121 is 0.7 L / min, the rinsing liquid discharge flow rate from the rinsing liquid discharge nozzle 124 is 2.2 L / min, and the chemical solution suction flow rate by the chemical solution suction nozzle 123 is 2. The speed was set at 5 L / min and the moving speed of the developing nozzle 120 was 0.5 mm / sec. The reason why the total discharge amount is not equal to the suction amount is that the developing cup overflows from above the wafer.

First, the rinsing liquid is started to be discharged from the rinsing liquid discharging nozzle 124, so that the auxiliary plate 112 and the surface of the substrate 100 to be processed are filled with the rinsing liquid. The thickness of the rinse liquid film 142 on the substrate to be processed 100 is:
It was about 1.5 mm.

Next, the developing nozzle 120 is connected to the substrate 1 to be processed.
At the same time, scanning is performed at a speed of 0.5 mm / sec while maintaining a gap of 100 μm from the upper end of the surface to be processed. At the same time, the discharge of the developer from the developer discharge nozzle 121 and the discharge of the rinse liquid from the vibration / turbulence addition nozzle 122 are started. Then, the suction of the chemical solution from the chemical solution suction nozzle 123 is started. From the processing start to the processing end, the rinsing liquid discharge nozzle 124
This is a state in which the rinsing liquid is constantly being discharged.

The developing solution flows through a gap between the lower surface of the developing nozzle 120 and the surface to be processed between the developing solution discharge nozzle 121 and the chemical solution suction nozzles 123 on both sides.
A fresh developer is always supplied, and the developer in which the photosensitive resin film is dissolved is immediately sucked and removed by the chemical solution suction nozzle 123, and the fresh developer film 1 is always provided between the regions.
41 is formed.

The rinsing liquid discharged from the rinsing liquid discharging nozzle 124 on the front side in the moving direction of the developing nozzle 120 is
When the liquid is discharged onto the surface to be processed, a part is sucked together with the developing solution by the chemical solution suction nozzle 123 on the front side, but most is discharged into a gap between the lower surface of the developing nozzle 120 and the surface to be processed. The discharged rinsing liquid is immediately sucked and removed by the chemical liquid suction nozzle 123 as the developing nozzle 120 moves, and is replaced with the developing liquid.

By discharging the rinsing liquid from the vibration / turbulence addition nozzle 122, the developing process is performed while the flow of the liquid immediately below the nozzle 120 is constantly turbulent during the scanning of the developing nozzle 120. Further, with the movement of the developing nozzle 120, the flow of the developing solution film 141 on the lower surface of the nozzle is disturbed by the convex portion 126. The temperature of the developing solution was controlled by a heater 125 built in the nozzle 120 so as to be at room temperature.

The length between the pair of chemical solution suction nozzles 123 is 4
Since the scanning speed is 0 mm and the scanning speed is 0.5 mm / sec, the effective development time is 80 sec at all points on the surface of the substrate 100 to be processed.

After the nozzle crossed over the wafer surface, rinsing was sufficiently performed, and then the substrate was dried to complete the formation of the resist pattern.

According to the above embodiment, a fresh developing solution is always supplied directly to the surface of the substrate 100 to be processed, and the developing solution used as the developing solution is immediately removed by suction. There is no difference in the concentration of the developing solution on the surface of the substrate 100 to be processed.

A step is formed on the substrate to be processed because a pattern is formed as the development proceeds. However, the processing of the substrate to be processed 100 is performed by discharging the rinse liquid from the vibration / turbulence addition nozzle 122 and projecting. By causing vibration or turbulence in at least a part of the developing solution film 141 existing between the surface and the lower surface of the developing nozzle 120, the replacement of the developing solution and the like are efficiently caused, and the dimensional fluctuation and the like due to the pattern density are reduced. The effect can be expected, and it is possible to achieve higher precision of the film processing.

Further, the developing solution film 141 is heated by the heater 125.
Is performed while heating, so that the dissolved products accumulated between the patterns of the photosensitive resin film 102 are indirectly heated, so that turbulence can be generated more efficiently, and more accurate pattern formation can be performed. Becomes possible. Further, a more precise pattern can be formed by a cleaning effect due to the fact that the dissolved product itself is easily decomposed, dissociated, and moved by thermal energy received from the developer film 141.

In general, when the temperature of the developing solution is increased, the dissolving speed of the photosensitive resin film is increased, so that the developing time required to obtain a desired pattern size can be shortened. There is also an effect that the consumption of the liquid can be reduced.

In the case of the present embodiment, the substrate to be processed is arranged below the developing nozzle, but the positional relationship between them is not necessarily required to be such a setting. The vertical relationship may be reversed. Further, the processing conditions such as the discharge flow rate, time, and scanning speed are not limited to the described values. Similarly, the positional relationship among the developer discharge nozzle, the suction nozzle, and the rinse liquid discharge nozzle is not limited to the described range, and various modifications are possible. For example, the rinsing liquid discharge nozzle 124 does not need to be integral with the developing nozzle 120 as described in the above embodiment. In the above embodiment, the chemical liquid discharge nozzle 121 and the chemical liquid suction nozzle 123 are arranged so that the flow of the liquid is symmetric. However, the arrangement is not necessarily limited to such an arrangement. They may be arranged to form a flow. The uneven shape and size of the lower surface of the developing nozzle 120 due to the formation of the projection 126 are not limited to the above-described range, and various modifications are possible. For example, as shown in FIG. 4A, a sine wave-shaped uneven shape may be used so that the uneven shape in the traveling direction of the nozzle does not change at an arbitrary position (one-dimensional arrangement). Note that a rectangular wave shape may be used instead of a sine wave. Further, as shown in FIG. 4B, the protrusions 126 may be two-dimensionally arranged (mottled).

The liquid discharged from the vibration / turbulence adding nozzle 122 on the lower surface of the nozzle is a rinse liquid (pure water).
However, the present invention is not limited to this, and a developer or functional water having oxidizing or reducing properties may be discharged. In addition, the ejection from the vibration / turbulence addition nozzle 122 is not limited to a liquid, and a gas may be ejected.

Although the above embodiment has been described with respect to the application of the development of the photosensitive resin film, the invention is not limited to the development of the photosensitive resin film. For example, the present invention is also applicable to wet etching of a wafer, development of a photosensitive resin film on a substrate in a photomask manufacturing process for semiconductor manufacturing, wet etching, cleaning, a color filter manufacturing process, and a developing process of a disk such as a DVD. It is possible.

(Second Embodiment) FIG. 5 shows a second embodiment of the present invention.
FIG. 5 is a diagram illustrating a schematic configuration of a substrate processing unit in the substrate developing device according to the embodiment. In FIG. 5, the same portions as those in FIG. 3 are denoted by the same reference numerals, and description thereof will be omitted.

A halogen lamp (light source) 201 is provided to face the surface of the substrate 100 opposite to the surface to be processed, and irradiates the substrate with light. A light guide 202 made of rectangular parallelepiped quartz glass is provided to efficiently irradiate the light emitted from the halogen lamp 201 to the substrate 100 to be processed. The light incident on the light guide 202 is repeatedly reflected inside the light guide 202, so that the light intensity is averaged in the exit surface. Halogen lamp 201 and light guide 202
Has a moving mechanism, which can be moved while irradiating the lower surface of the substrate 100 during processing.

The chemical spilled from the substrate 100 and the auxiliary plate 112 between the substrate 100 and the light guide 202 is filled with the halogen lamp 201 and the light guide 202.
A transparent plate 203 made of quartz glass is installed in order to prevent the light amount from decreasing due to this. The ultra-thin quartz substrate is subjected to a surface treatment and has water repellency to a developing solution or a rinsing solution. The substrate 1 to be processed is attached to the end of the transparent plate 203.
In order to prevent attenuation of the amount of light applied to the
Air nozzle 204 that blows off the chemical solution that has fallen on 3 instantly
Is provided.

An example of a method for controlling the heating of the substrate to be processed by the halogen lamp 201 will be described below. For example, using a dummy substrate substrate different from the substrate to be processed 100 in which a thermocouple is buried near the surface, a heating experiment is performed in advance under the same conditions as the experimental conditions, so that the heating characteristics are transmitted to the control unit. A desired heating is applied to the photomask by storing a plurality of patterns.

A specific method for supplying a developer onto a photomask will be described. First, a substrate 10 to be processed having a photosensitive resin film 102 such as a resist formed on a base film to be processed.
0 was irradiated with an electron beam to form a latent image on the photosensitive resin film 102. The substrate to be processed 100 was horizontally held by the substrate holder 111, and the developing nozzle 120 having substantially the same size as the length of the substrate to be processed 100 in the vertical direction was moved above the edge on the surface of the substrate to be processed 100. . Rinse liquid discharge nozzle 12
The rinsing liquid was discharged from No. 4 so that the auxiliary plate 112 and the substrate to be processed 100 were filled with the rinsing liquid. The rinse liquid thickness on the substrate to be processed 100 was about 1.5 mm. The developing nozzle 120 is moved at a speed of 0.5 mm /
At the same time, the rinsing liquid was started from the nozzle 122 for discharge, suction, and vibration / turbulence addition of the developing liquid.

From the start of the process to the end of the process, the rinse liquid is constantly being discharged from the rinse liquid discharge nozzle 124. The temperature of the developing solution was controlled by a heater 125 built in the developing nozzle 120 so as to be higher than room temperature.

Further, the position of the developing nozzle 120 is always sent to the control system as a position signal, and the halogen lamp and the light guide are moved at the same speed as the nozzle in accordance with the position signal so as to correspond to the developing nozzle 120. The scanning of the developing nozzle 120 was performed while irradiating the position to be performed. Note that the processing was performed while the temperature of the surface of the substrate to be processed 100 was set to 80 ° C.

After the nozzle crossed the wafer surface, rinsing was sufficiently performed, and then the substrate was dried to complete the formation of the resist pattern.

According to the present embodiment, fresh developer is always supplied directly to the surface of the substrate 100 to be processed.
Since the developer used as the developer is immediately removed by suction, there is no difference in the concentration of the developer on the surface of the substrate 100 to be processed.

By heating the substrate 100 with the halogen lamp 201 from the back side of the substrate 100, the developer film 141 on the surface of the substrate 100 to be processed is heated and warmed. Convection occurs in the heated developer film, and turbulence occurs in at least a part of the developer film 141.
Due to the generation of turbulence, the replacement of the developing solution and the like can be efficiently generated, and the effect of reducing the dimensional fluctuation due to the density of the pattern can be expected, and it is possible to achieve high precision of the film processing.

When light is used to heat the substrate, the responsiveness of the temperature rise is improved as compared with the case where a heater is used as in the previous embodiment, so that the processing can be performed in a short time. Further, in the present embodiment, since the light is irradiated from the back side of the substrate that does not contact the processing target substrate 100, the convenience in manufacturing the chemical processing unit is improved.

In the above embodiment, an example in which the present invention is applied to the step of developing the photosensitive resin film 102 on the Si wafer 101 has been described. However, the present invention is not limited to the development of the photosensitive resin film. For example, in wet etching of a semiconductor wafer, development of a photosensitive resin film on a substrate in a photomask manufacturing process for semiconductor manufacturing, wet etching, cleaning, and color filter manufacturing process, and development in a processing process of a disk such as a DVD. Is also applicable.

(Third Embodiment) FIG. 6 shows a third embodiment of the present invention.
FIG. 5 is a diagram illustrating a schematic configuration of a substrate processing unit in the substrate developing device according to the embodiment.

The developing nozzle 120 provided with the developing solution discharge nozzle 121, the chemical solution suction nozzle 123, and the rinsing liquid discharging nozzle 124 on the processing surface of the processing substrate
It is arranged very close to 00. Development nozzle 120
The gap between the lower surface and the surface of the substrate 100 to be processed is 10 μm. Further, the developing nozzle 120 can be moved by a driving mechanism while keeping a constant gap with the substrate 100 to be processed.

The developing nozzle 120 is a developer discharging nozzle 1
A halogen lamp 301 is provided in a region between the nozzle 21 and the chemical solution suction nozzle. Light emitted from the halogen lamp 301 irradiates the surface of the substrate 100 to be processed through the window 302 with a filter provided on the lower surface of the developing nozzle 120. The window with filter 302 has a function of selectively transmitting only the infrared wavelength, and the surface to be processed is irradiated with only the infrared wavelength light. In order to efficiently irradiate light to the substrate 100 to be processed, the reflector 30 coated with gold is used.
3 is provided.

A control system (not shown) controls the developer discharge flow rate, the developer discharge time, the suction flow rate, the suction time, the rinsing liquid discharge amount, the discharge time, the nozzle moving speed, the output of the halogen lamp 301, and the like. Do. Halogen lamp 301
Is controlled by arranging a calorie meter (not shown) beside the lamp 301, monitoring its output, and feeding it back.

First, a Si wafer 10 having a photosensitive resin film 102 such as a resist formed on a base film to be processed.
1 is exposed through a chromium mask by a KrF excimer stepper to form a latent image on the photosensitive resin film 102.

The substrate to be processed 100 is transferred to the substrate holder 111.
After that, the developing nozzle 120 capable of supplying the liquid to the entire surface of the substrate 100 to be fixed and held by the vacuum chuck is moved to the initial position above the end. The upper surface of the auxiliary plate 112 was flush with the upper surface of the substrate to be processed.

Next, a specific method for supplying the developing solution onto the wafer will be described. A wafer having a photosensitive resin film such as a resist formed on a base film to be processed was exposed through a chromium mask by a KrF excimer stepper to form a latent image on the photosensitive resin film. The wafer is held horizontally by a wafer holder, and the developing nozzle 120 which is approximately the same size as the diameter of the rod-shaped wafer and can supply liquid to the entire surface of the wafer is moved to the initial position. 0.7L / mi developer discharge flow rate
n, the rinsing liquid discharge flow rate was set at 2.2 L / min, the suction flow rate was set at 2.5 L / min, and the moving speed was set at 0.5 mm / sec. The reason why the total discharge amount and the suction amount are not equal is that the developing cup overflows from above the substrate.

First, the rinsing liquid is started to be discharged from the rinsing liquid discharging nozzle 124, and the auxiliary plate 112 and the surface to be processed 100 are filled with the rinsing liquid. The thickness of the rinse liquid film 142 on the substrate to be processed 100 is:
It was about 1.5 mm.

Next, the developing nozzle 120 is connected to the substrate 1 to be processed.
At the same time, scanning is performed at a speed of 0.5 mm / sec from the upper end of the surface to be processed while maintaining a gap of 100 μm, at the same time, the developer is discharged from the developer discharge nozzle 121, the chemical is suctioned by the chemical suction nozzle 123, and the halogen lamp 301 is discharged.
To start lighting.

By performing the development processing while turning on the halogen lamp, the temperature of the substrate and the chemical solution rises, and the development reaction can be performed more efficiently.

After the nozzle traversed the wafer surface, rinsing was sufficiently performed, and then the substrate was dried to complete the formation of the resist pattern.

According to the present embodiment, fresh developer is always supplied directly to the surface of the substrate 100 to be processed.
Since the developer used as the developer is immediately removed by suction, there is no difference in the concentration of the developer on the surface of the substrate 100 to be processed.

By heating the substrate 100 with the halogen lamp 301 from the surface of the substrate 100 to be processed, the developer film 141 on the surface of the substrate 100 to be processed is heated.
Is heated and warmed. Convection occurs in the heated developer film, and turbulence occurs in at least a part of the developer film 141. Due to the generation of turbulence, the replacement of the developing solution and the like can be efficiently generated, and the effect of reducing the dimensional fluctuation due to the density of the pattern can be expected, and it is possible to achieve high precision of the film processing.

Further, by selecting the wavelength of the light to be irradiated on the substrate 100 to be processed and the developing solution film 141 by the window with filter 302, it is possible to improve the irradiation of high energy light and the heating efficiency.

Further, the developing solution film is heated, so that the developing time can be shortened.

As shown in the first embodiment, a convex portion may be provided on the lower surface of the nozzle 120, and a combination of unevenness and the like and heating with light may be used. Convex part 126
Is located between the developer discharge nozzle 121 and the chemical suction nozzle 123 (FIG. 7A), a region outside the pair of chemical solution suction nozzles 123 (FIG. 7B), or the developer discharge nozzle 121 and the chemical suction nozzle 123. In some cases, the rinsing liquid discharge nozzle 124 is not shown in FIG. are doing.

Further, in the configuration of the developing nozzle 120 shown in FIGS. 7A to 7B, a configuration without a heating lamp (FIGS. 8A to 8C) may be employed.

The light source is not limited to the halogen lamp, and a laser oscillator or the like may be used.
Further, if necessary, it can be used in combination with an optical system such as a light guide and a lens.

In the case of the present embodiment, the substrate 100 to be processed is arranged below the developing nozzle 120. However, the positional relationship between the two is not necessarily required to be such a setting, and the vertical relationship is reversed as shown in FIG. There can be.

Further, the processing conditions such as the discharge flow rate, the time, and the scanning speed are not limited to the values in the embodiment.
Similarly, the developer discharge nozzle 121 and the chemical solution suction nozzle 12
3. The positional relationship of the rinsing liquid discharge nozzle 124 is not limited to the above range, and various modifications are possible.

Although the present embodiment has been described with respect to the application of the development of the wafer, the invention is not limited to the development of the wafer. For example, the present invention is also applicable to a case where information on the processing speed is acquired using the above-described light and fed back to the process. In addition, in the wet etching of wafers and the development of photosensitive films on substrates in photomask manufacturing processes for semiconductor manufacturing, wet etching, cleaning, and color filter manufacturing processes, and in the processing of discs such as DVDs, etc. Applicable.

For example, as shown in FIG. 10 as an example of cleaning, a rinsing liquid discharge nozzle 321, a rinsing liquid turbulence forming member 326, and a light irradiating section 3 are provided below a substrate 300 to be processed.
In some cases, a nozzle 320 having 01, 302, and 303 may be arranged. If necessary, the entire processing system may be submerged in a rinsing liquid. In this case, in the step of removing the reaction product 310 generated on the surface of the substrate to be processed, if the vertical relationship between the nozzle 320 and the substrate to be processed 300 is reversed while irradiating light, the influence of gravity causes Since it acts in the direction of increasing the cleaning efficiency, it is possible to effectively clean the surface of the substrate 300 to be processed.

(Fourth Embodiment) FIG. 11 is a view showing a schematic configuration of a substrate processing section in a substrate developing apparatus according to a fourth embodiment of the present invention. 2 and 3 are denoted by the same reference numerals and description thereof will be omitted.

As shown in FIG. 11, the developing nozzle 120 has an ultrasonic vibrator 401 therein. By driving the ultrasonic vibrator 401, it is possible to vibrate the developing solution or the rinsing solution to disturb the flow.

Further, the lower surface of the nozzle has a different surface roughness on a mesh (FIG. 12). As shown in FIG. 12, there are two regions, a first region 411 having a surface roughness Ra = 0.20 and a second region having a surface roughness Ra = 0.80. By changing the roughness on the surface in the two regions 411 and 412, the frictional force with the liquid on the surface is locally changed, so that the flow is disturbed, and the vibration by the ultrasonic vibrator is combined with the left, right, up and down directions. It is possible to generate turbulence more efficiently.

Further, in order to increase the flow rate of the chemical solution on the surface of the substrate to be processed, the wettability of a part of the surface of the developing nozzle opposed to the surface of the substrate to be processed with the chemical solution is determined by measuring the wettability of the substrate. In some cases, the surface may be configured to be more hydrophilic than the wettability of the surface with the chemical solution.

By changing the wettability as described above, as shown in FIG. 13, the flow rate of the chemical solution (developing solution, rinsing solution) 420 on the main surface of the substrate to be processed 100 is reduced.
20, the flow generated between the patterns of the photosensitive resin film 102 on the Si wafer 101 can be increased, and the efficiency of the replacement of the chemical solution between the patterns of the photosensitive resin film 102 can be increased. It is possible to do.

At the time of development, this embodiment is the same as the other embodiment except that the development processing is performed under the same processing conditions as in Example 1 while applying ultrasonic vibration to the developer and the rinsing liquid via the nozzle. Detailed description of the developing process is omitted.

The present invention is not limited to the above embodiment, but can be implemented in various modifications without departing from the scope of the invention.

[0091]

As described above, according to the present invention, the liquid is replaced by causing a vibration or a turbulent flow in at least a part of the chemical liquid film existing between the main surface of the substrate to be processed and the nozzle surface opposed thereto. And the like can be efficiently generated, and an effect of reducing dimensional fluctuations and the like due to pattern density can be expected, and it is possible to achieve higher precision of film processing.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing unit in a substrate developing apparatus according to a first embodiment.

FIG. 2 is a diagram illustrating a schematic configuration of a substrate processing unit in the substrate developing device according to the first embodiment.

FIG. 3 is a diagram showing a configuration of a developing nozzle 120 shown in FIGS.

FIG. 4 is a view showing a shape of a convex portion provided on a developing nozzle.

FIG. 5 is a diagram illustrating a schematic configuration of a substrate processing unit in a substrate developing device according to a second embodiment.

FIG. 6 is a diagram illustrating a schematic configuration of a substrate processing unit in a substrate developing device according to a third embodiment.

FIG. 7 is a diagram showing an installation position of a protrusion provided on a developing nozzle.

FIG. 8 is a diagram showing an installation position of a protrusion provided on a developing nozzle.

FIG. 9 is a diagram showing a modification of the arrangement relationship between the developing nozzles and the substrate to be processed.

FIG. 10 is a diagram illustrating a schematic configuration of a substrate processing unit in the substrate cleaning apparatus.

FIG. 11 is a diagram illustrating a schematic configuration of a substrate processing unit in a substrate developing apparatus according to a fourth embodiment.

FIG. 12 is a plan view showing a state of a surface of a developing nozzle facing a substrate to be processed according to a fourth embodiment.

FIG. 13 is a view used to explain the effect when the wettability between the developing nozzle and the substrate to be processed is changed.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 substrate to be processed 101 wafer 102 photosensitive resin film 111 substrate holder 112 auxiliary plate 113 gap measuring mechanism 114 gap adjusting mechanism 115 moving mechanism 120 developing nozzle 121 developing solution discharge nozzle 122 vibration / Turbulence addition nozzle 123 ... chemical solution suction nozzle 124 ... rinse liquid discharge nozzle 125 ... heater 126 ... convex part 141 ... developer liquid film 142 ... rinse liquid film

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H096 AA24 AA25 AA28 GA30 GA60 5F046 LA03 LA13

Claims (19)

[Claims] A substrate holding mechanism for holding a substrate to be processed substantially horizontally; a chemical solution discharge opening arranged to face a surface to be processed of the substrate to be processed, for discharging a chemical solution to the substrate to be processed; A chemical solution discharge / suction mechanism having a chemical solution discharge / suction unit having a chemical solution suction opening for sucking a chemical solution on the substrate to be processed; and the horizontal movement of the chemical solution discharge / suction unit and the substrate to be processed. And a vibration / turbulence addition mechanism for applying vibration, convection or turbulence to at least a part of the liquid film of the chemical liquid discharged from the chemical liquid discharge / suction unit onto the substrate to be processed. Characteristic substrate processing equipment. 2. The chemical liquid discharge / suction mechanism is provided so as to sandwich the chemical liquid discharge opening and the chemical liquid suction opening in the relative horizontal movement direction. 2. The substrate processing apparatus according to claim 1, further comprising one or more pairs of second chemical liquid discharge openings for discharging a different second chemical liquid to the surface to be processed. 3. The apparatus according to claim 1, wherein the vibration / turbulence applying mechanism is a heating mechanism for heating at least one of the substrate to be processed and a chemical solution discharged onto the substrate to be processed. Substrate processing equipment. 4. The heating mechanism includes: a window provided on a surface of the chemical solution discharge / suction unit facing the substrate to be processed; and at least one of the substrate to be processed and a chemical solution on the substrate to be processed via the window. The substrate processing apparatus according to claim 3, further comprising a light source that irradiates light. 5. The heating mechanism includes a light source provided opposite to a surface of the substrate to be processed opposite to a surface to be processed, and irradiating the substrate with light. The substrate processing apparatus according to claim 3. 6. The vibration / turbulence adding mechanism is characterized by comprising a plurality of convex portions arranged and formed on a surface of the chemical solution discharge / suction unit facing the surface to be processed of the substrate to be processed. The substrate processing apparatus according to claim 1. 7. The substrate processing apparatus according to claim 6, wherein the projections are arranged in a straight line or in a mottled shape. 8. The substrate processing apparatus according to claim 6, wherein at least a part of the plurality of projections is formed in a square or smooth shape. 9. The substrate processing apparatus according to claim 1, wherein the vibration / turbulence adding mechanism is an ultrasonic vibrator installed in the chemical solution discharge / suction unit. 10. The vibrating / turbulent flow adding mechanism, wherein a surface of the chemical solution discharge / suction unit facing a surface to be processed of the substrate to be processed has two or more types of surface states having different contact angles with a chemical solution. The substrate processing apparatus according to claim 1, wherein: 11. The wettability of a part of the surface of the chemical solution discharge / suction unit facing the surface to be processed of the substrate to be processed is more hydrophilic than the wettability of the surface of the substrate to be processed to the chemical solution. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is configured to have the following surface state. 12. The substrate processing apparatus according to claim 1, wherein a chemical liquid heating function is provided in a transport path for supplying a chemical liquid to the chemical liquid discharge opening. 13. The apparatus according to claim 13, wherein the vibration / turbulence adding mechanism is a chemical / gas discharge opening for discharging a chemical or gas, which is disposed between the chemical discharge opening and the chemical suction opening. The substrate processing apparatus according to claim 1, wherein: 14. A chemical liquid is continuously discharged from a chemical liquid discharge opening of a chemical liquid discharge / suction unit to the substrate to be processed whose surface is held substantially horizontally, and the chemical liquid is discharged. The chemical solution discharge / suction unit and the substrate to be processed are relatively sucked while the chemical solution on the surface to be processed is continuously sucked at the chemical solution suction opening arranged at the chemical solution discharge / suction unit adjacent to the opening. A substrate processing method for performing a chemical treatment on the surface to be processed while moving horizontally to a region between the chemical solution discharge / suction unit and the surface to be processed, and between the chemical solution discharge opening and the chemical solution suction opening. Wherein a fresh chemical is always supplied to the gap in (1), and vibration, convection or turbulence is caused to the chemical on the surface to be processed. 15. In the region between the chemical solution discharge / suction unit and the surface to be processed and between the chemical solution discharge opening and the chemical solution suction opening, at least the chemical solution on the substrate to be processed and the surface to be processed. The substrate processing method according to claim 14, wherein one side is heated to generate vibration, convection or turbulence with respect to the chemical solution on the surface to be processed. 16. The substrate processing method according to claim 15, wherein light is used for heating at least one of the substrate to be processed and the chemical solution on the surface to be processed. 17. The substrate processing method according to claim 16, wherein the processing target surface of the processing target substrate is irradiated with light and heated. 18. The method according to claim 1, wherein the surface of the substrate to be processed is irradiated with light to heat the surface opposite to the surface to be processed.
7. The substrate processing method according to 6. 19. Vibration, convection, or turbulence is generated in a chemical solution on a surface to be processed by applying vibration to the chemical solution by an ultrasonic vibrator provided in the chemical solution discharge / suction unit. The substrate processing method according to claim 14, wherein: