JP2002334860A - High-pressure treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high pressure treating apparatus, capable of effectively improving the treating performance and shortening the treating time, by carrying out substrate treatment using a treating fluid in a low-pressure state, in addition to substrate treatment using the treating fluid in a high-pressure state. SOLUTION: After valves V1, V3 are opened and a valve V2 is closed, substrate cleaning by supercritical carbon dioxide in a high-pressure state is carried out in a substrate-cleaning tank 5. After the substrate cleaning by the supercritical carbon dioxide is carried out for a predetermined interval, the valves V1, V3 are closed and the valve V2 is opened. As a result, supercritical carbon dioxide in the high pressure state in the substrate cleaning tank 5 flows into a buffer tank 6, and the pressure in the tank 5 is lowered inaccording to the capacity of the tank 6. Thus, in the substrate-cleaning tank 5, substrate- cleaning is conducted by the expanded supercritical carbon dioxide in low- pressure state. This supercritical carbon dioxide in the low-pressure state is sent out to a decompressor 7, after being pressurized to a predetermined pressure by a compressor 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-pressure processing apparatus using a high-pressure processing fluid, and more particularly to an FPD (Flat) such as a semiconductor substrate or a glass substrate for a liquid crystal display.
High-pressure processing of a substrate (Panel Display), a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter, simply referred to as a “substrate”) by supplying a high-pressure processing fluid, for example, unnecessary substances attached to the substrate. TECHNICAL FIELD The present invention relates to a high-pressure processing apparatus for performing a process for removing carbon dioxide.

[0002]

2. Description of the Related Art In recent years, a low-pressure, high-pressure processing fluid such as supercritical carbon dioxide has been used as a stripping liquid or a rinsing liquid in accordance with the flow of defluorination in cleaning a substrate on which electronic parts and the like are formed. It has been noted.

In addition, due to the recent shrinking of semiconductor devices (shrinking), device design rules (technology nodes) have been further miniaturized, and the momentum has been further accelerated. In such a semiconductor device, a very fine groove (trench) or hole (hole) is structurally very small.
Cleaning is required. The former is a capacitor (capacitance portion of a capacitor) and horizontal wiring (planar wiring), and the latter is vertical wiring (three-dimensional wiring, connection between horizontal wiring and horizontal wiring, connection to gate electrode of transistor), and the like. .

In such a fine structure, the ratio of the width to the depth, that is, the so-called aspect ratio (aspect ratio) has become extremely large, and a narrow groove having a narrow width and a deep hole having a small diameter have been formed. I have. Some of them have a width or diameter of submicron and an aspect ratio of more than 10. After such a microstructure is manufactured on a semiconductor substrate by dry etching or the like, not only the upper flat portion but also the sidewalls and bottoms of the grooves and holes, the resist debris, the resist altered by dry etching, and the metal at the bottom are formed. And contamination of the resist compound, oxidized metal and the like remain.

Conventionally, these contaminants have been cleaned with a solution-based chemical. However, with such a fine structure, the penetration of the chemical solution and the replacement with pure water are not smooth, and cleaning failures are occurring. In addition, a material having a low dielectric constant (a so-called Low-k) is used in order to prevent the etched insulator from delaying an electric signal due to wiring.
) Must be used, and there is a problem that the chemical solution deteriorates the low dielectric constant, which is its characteristic. In addition, when the metal for wiring is exposed, there is a restriction that a chemical solution for dissolving the metal cannot be used.

[0006] In cleaning such a fine structure of a semiconductor device, a supercritical fluid, mainly a supercritical fluid of carbon dioxide, has attracted attention due to its properties. Although the supercritical fluid itself of carbon dioxide is inert, the carbon dioxide fluid has a dissolving power about the same as hexane, so that the removal of water, oil, and the like on the substrate surface can be easily performed. Also, for example, when amines or ammonium fluoride used for cleaning the above-mentioned contamination are mixed, a multi-component supercritical fluid is formed in a certain appropriate concentration range, and easily penetrates a fine device structure. The above contamination can be removed. Further, amines, ammonium fluoride, and the like contaminated with the contamination can be easily removed from the fine device structure.

Further, the supercritical fluid does not remain even if it penetrates into a low-dielectric-constant insulator like a solution-type chemical solution, so that its characteristics do not change. Therefore, it is very suitable for cleaning the fine structure of a semiconductor device, and has attracted much attention.

Here, as shown in FIG. 3, the supercritical fluid refers to a state of a substance obtained at a critical pressure Pc or more and a critical temperature Tc or more (shaded portion in the figure). Since this supercritical fluid has intermediate properties between liquid and gas, it can be said that it is suitable for precise cleaning. In other words, supercritical fluids have a density close to that of liquids and have high solubility, so they are effective for cleaning organic components.Because they have excellent diffusibility like gases, they can be uniformly cleaned in a short time, Because of its low viscosity, it is suitable for cleaning fine parts.

As the substance to be changed into the supercritical fluid, carbon dioxide, water, nitrous oxide, ammonia, ethanol, and the like are used. Here, carbon dioxide is often used because the critical pressure Pc is 7.4 MPa, the critical temperature Tc is about 31 ° C., and a supercritical state can be obtained relatively easily, and carbon dioxide is nontoxic.

[0010] As an apparatus for cleaning a substrate using the supercritical fluid, a configuration shown in FIG. 4 is conceivable. FIG.
The high-pressure processing apparatus shown in FIG. 1 includes a cylinder 11 filled with liquid carbon dioxide, a condenser 12, a booster 13, and a heater 1
4, substrate cleaning tank 15, decompressor 17, and separation and recovery tank 1
8 and valves V1 and V2.

Hereinafter, the cleaning operation of the high-pressure processing apparatus having the above configuration will be briefly described. First, the substrate to be cleaned is
It is set in the substrate cleaning tank 15 and hermetically closed. When the substrate is set, the following cleaning process is started. First, the liquid carbon dioxide in the cylinder 11 is supplied to the condenser 12 and stored as a liquid. The liquid carbon dioxide is boosted to a pressure equal to or higher than the critical pressure Pc in the booster 13, is further heated to a temperature equal to or higher than the critical temperature Tc in the heater 14, becomes supercritical carbon dioxide, and is sent to the substrate cleaning tank 15.
In the substrate cleaning tank 15, cleaning is performed by bringing supercritical carbon dioxide into contact with the substrate.

The supercritical carbon dioxide mixed with the contaminants after cleaning the substrate (organic substances, inorganic substances, metals, particles, water, etc. mixed into the supercritical carbon dioxide from the substrate by the cleaning) is subjected to a final decompression in the decompressor 17. After being made and vaporized, it is separated into gaseous carbon dioxide and pollutants in the separation and recovery tank 18. The separated contaminants are discharged, and the gaseous carbon dioxide is recovered and reused in the condenser 12. The above cleaning process is repeated for a predetermined time,
Substrate cleaning is completed.

[0013]

Here, in order to improve the cleaning performance of the substrate and shorten the cleaning time, not only cleaning with supercritical carbon dioxide in a high pressure state but also reduction of the pressure in the substrate cleaning tank 15 is performed. A method of performing cleaning with supercritical carbon dioxide in a low pressure state or gaseous carbon dioxide is also conceivable. The principle of this cleaning is removal of contamination by the expansion energy of the processing fluid in a supercritical state. In order to realize this method, a buffer tank is provided on the secondary side of the substrate cleaning tank 15 in order to return the inside of the substrate cleaning tank 15 in a high pressure state to a low pressure state. Is performed.

However, in the above-described configuration of the conventional high-pressure processing apparatus, the lower limit of the pressure required for sending the supercritical carbon dioxide in the substrate cleaning tank 15 to the decompressor 17 is restricted, and a sufficient pressure reduction is performed. A buffer tank that can be used cannot be provided. For this reason, even if the pressure in the substrate cleaning tank 15 is reduced as much as possible by the buffer tank, the cleaning performance of the substrate cannot be effectively improved and the cleaning time cannot be reduced.

Such a problem is not limited to a cleaning method using a supercritical fluid, and a substrate is developed and cleaned in a closed processing tank using a subcritical fluid or a high-pressure gas such as ammonia.
The same applies to high-pressure treatment such as drying.

Here, the subcritical fluid generally refers to a liquid in a high pressure state in a region just before the critical point in FIG. Fluids in this region may be distinguished from supercritical fluids, but since physical properties such as density change continuously, there is no physical boundary and they are used as subcritical fluids In some cases. Those existing in the subcritical or supercritical region near the critical point in a broad sense are also referred to as high-density liquefied gas.

That is, even if the substrate processing using such a high-pressure fluid and the substrate processing using a processing fluid in a low-pressure state by reducing the pressure in the processing tank are performed by a conventional apparatus configuration, the processing time can be reduced. I couldn't plan.

Therefore, an object of the present invention is to provide a method for processing a substrate by using a processing fluid in a low-pressure state by sufficiently lowering the pressure in a substrate processing tank in addition to a substrate processing using a processing fluid in a high-pressure state. An object of the present invention is to provide a high-pressure processing apparatus capable of effectively improving performance and reducing processing time.

[0019]

Means for Solving the Problems and Effects of the Invention In order to achieve the above object, the present invention has the following features. A first invention is a high-pressure processing apparatus for performing a predetermined process on a substrate using a processing fluid, comprising: a supply unit that supplies a processing fluid; and a processing fluid supplied from the supply unit that is changed to a high-pressure state. A substrate processing unit that processes a substrate installed in a processing tank by contacting the substrate with a high-pressure processing fluid, a depressurizing unit that depressurizes the high-pressure processing fluid in the processing tank to a predetermined pressure, and a processing fluid that is depressurized by the depressurizing unit. And a pressure raising section for raising the pressure to a pressure required for downstream transmission.

As described above, according to the first aspect, the pressure reducing section capable of sufficiently reducing the pressure of the processing fluid in the processing tank in a high pressure state, and the pressure increasing section capable of increasing the pressure required for downstream delivery. Is provided. This makes it possible to realize high-performance substrate processing using a processing fluid in a low-pressure state.

A second invention is an invention according to the first invention, and further comprises a processing fluid recovery unit for recovering and reusing the processing fluid sent from the pressure increasing unit.

As described above, according to the second aspect of the present invention, the pressure increasing section capable of increasing the pressure to the pressure required for the treatment fluid recovery is further provided. This makes it possible to reliably recover the processing fluid in the low pressure state.

According to a third aspect of the present invention, there is provided a high-pressure processing apparatus for performing a predetermined process on a substrate using a supercritical fluid, comprising: a supply unit for supplying a predetermined supercritical fluid; and a supercritical fluid supplied from the supply unit. A substrate processing unit that processes a substrate placed in a processing tank by contacting the substrate with a supercritical fluid, a depressurizing unit that depressurizes the supercritical fluid in the processing tank to a predetermined pressure, and is depressurized by a depressurizing unit. And a pressure raising unit for raising the pressure to a pressure necessary for sending the supercritical fluid downstream.

As described above, according to the third aspect of the present invention, the pressure reducing section capable of sufficiently reducing the pressure of the supercritical fluid in the processing tank and the pressure rising to the pressure required for sending the reduced pressure supercritical fluid downstream are provided. Provide a possible booster. Thus, high-performance substrate processing using a low-pressure supercritical fluid or the like can be realized.

A fourth invention is an invention according to the third invention, further comprising a supercritical fluid recovery unit for recovering and reusing the supercritical fluid sent from the pressure increasing unit. I do.

As described above, according to the fourth aspect of the present invention, the pressurizing section which can increase the pressure of the decompressed supercritical fluid to a pressure required for recovery is further provided. This makes it possible to reliably recover the supercritical fluid in a low pressure state.

According to a fifth aspect of the present invention, there is provided the invention according to the fourth aspect, further comprising a switching unit for switching the outflow path of the supercritical fluid in the processing tank to one of a supercritical fluid recovery unit and a decompression unit. The substrate processing unit, when the outflow path is switched to the supercritical fluid recovery unit, performs high-pressure processing on the substrate using the supplied supercritical fluid, and when the substrate is switched to the decompression unit, the pressure is reduced. The method is characterized in that a substrate is processed using a supercritical fluid.

As described above, according to the fifth aspect, the outflow path of the supercritical fluid is controlled to switch the pressure in the processing tank. As a result, in addition to the supercritical fluid in a high pressure state,
High-performance and short-time substrate processing using a supercritical fluid or the like in a low-pressure state can be realized.

A sixth invention is an invention according to the fifth invention, wherein the switching unit switches the outflow path in a pulsed manner.

As described above, according to the sixth aspect of the present invention, control is performed such that the outflow path is switched in a pulsed manner.
Thus, the pressure in the processing tank can be changed in a short time, that is, the substrate processing using the supercritical fluid in a high pressure state and the substrate processing using the supercritical fluid in a low pressure state can be repeatedly performed. Thus, for example, the removal of contaminants by the expansion energy of the supercritical fluid in a high-pressure state is repeated many times in a short time, so that the processing performance can be further improved.

[0031]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a block diagram showing a configuration of a high-pressure processing apparatus according to one embodiment of the present invention. In FIG. 1, a high-pressure processing apparatus according to the present embodiment includes a cylinder 1, a condenser 2, a booster 3, a heater 4, a substrate cleaning tank 5, a buffer tank 6, a compressor 9
, A pressure reducer 7, a separation and recovery tank 8, and valves V1 to V3.

First, each configuration of the high-pressure processing apparatus of the present embodiment will be described. The cylinder 1 is filled with liquefied carbon dioxide used for cleaning the substrate. The condenser 2 cools and liquefies gaseous carbon dioxide supplied from the separation and recovery tank 8. The booster 3 raises the pressure of the liquid carbon dioxide liquefied in the condenser 2 to a predetermined pressure equal to or higher than the critical pressure Pc. The heater 4 heats the liquid carbon dioxide pressurized by the booster 3 to a predetermined temperature equal to or higher than the critical temperature Tc. Thereby, the liquid carbon dioxide changes into a supercritical fluid (see FIG. 3). This supercritical carbon dioxide corresponds to one of the processing fluids applicable to the present invention.

In the substrate cleaning tank 5 as a processing tank, the substrate is cleaned using the generated supercritical carbon dioxide. The buffer tank 6 decompresses supercritical carbon dioxide according to the tank capacity by expanding supercritical carbon dioxide in the substrate cleaning tank 5 into the tank.

The compressor 9 raises the pressure of the processing fluid depressurized in the buffer tank 6 again to a predetermined pressure necessary for sending it to the decompressor 7. The decompressor 7 vaporizes the supercritical carbon dioxide that has been subjected to the cleaning process in the substrate cleaning tank 5 by decompression. In the separation / recovery tank 8, the vaporized carbon dioxide and the contaminants are separated by the pressure reducer 7, and gaseous carbon dioxide is supplied to the condenser 2 again.

The valve V1 is used to supply the generated supercritical carbon dioxide in a high pressure state to the substrate cleaning tank 5, and is a pipe connecting the secondary side of the heater 4 and the primary side of the substrate cleaning tank 5. Provided above. The valve V2 is connected to the substrate cleaning tank 5
The inside of the substrate cleaning tank 5 is used to collect the low pressure state supercritical carbon dioxide which has been subjected to the cleaning process in the substrate cleaning tank 5 and the secondary side of the substrate cleaning tank 5 and the primary side of the buffer tank 6. It is provided on the connecting pipe. Valve 3 is
It is used to increase the pressure inside the substrate cleaning tank 5 and to recover the supercritical carbon dioxide in the high pressure state after the cleaning processing in the substrate cleaning tank 5 is completed. It is provided on a pipe that connects to the primary side.

Here, the piping system leading to the cylinder 1 and the substrate cleaning tank 5 corresponds to the supply unit of the present invention, the piping system including the buffer tank 6 corresponds to the pressure reducing unit, and the piping system including the compressor 9 corresponds to the pressure increasing unit. The piping system including the decompressor 7 and the separation / recovery tank 8 downstream of the valve V3 respectively corresponds to the recovery section. The substrate cleaning tank 5 constitutes a substrate processing unit, and includes a valve V1 to a valve V3.
Constitute a switching unit.

Next, a description will be given of a substrate cleaning operation performed by the high-pressure processing apparatus according to the present embodiment having this configuration. In the present embodiment, a case where carbon dioxide is used as the processing fluid will be described. However, other substances that can change to a supercritical fluid state such as nitrous oxide, alcohol, ethanol, and water may be used. Further, the substrate cleaning method used in the substrate cleaning tank of the present embodiment may be either a batch method for simultaneously cleaning a plurality of substrates or a single-wafer method.

First, the substrate to be cleaned is placed in the substrate cleaning tank 5.
It is installed in. When the substrate is installed, the valves V1, V
3 is opened, the valve V2 is closed, and the following cleaning process is started.

First, carbon dioxide used as a processing fluid is stored as a liquid in the cylinder 1 at a pressure of 5 to 6 MPa, and this liquid carbon dioxide is supplied to the condenser 2 and stored as a liquid. Liquid carbon dioxide is booster 3
The pressure is increased to a pressure equal to or higher than the critical pressure Pc, and further heated to a predetermined temperature equal to or higher than the critical temperature Tc in the heater 4 to become a supercritical fluid, which is sequentially sent to the substrate cleaning tank 5.

Here, the predetermined pressure and temperature can be freely set based on the type of the substrate to be cleaned and the desired cleaning performance. In the substrate cleaning tank 5, the substrate is cleaned with the supercritical carbon dioxide in the high pressure state. The high-pressure supercritical fluid mixed with contaminants by the substrate cleaning is decompressed and vaporized in the decompressor 7, and then separated into gaseous carbon dioxide and contaminants in the separation and recovery tank 8. The separated pollutants are discharged, and the gaseous carbon dioxide is collected and reused in the condenser 2. For example, the decompressor 7 maintains the supercritical carbon dioxide at about 80 ° C. or higher and increases the pressure from 15 MPa to 6 MPa.
The pressure is reduced to gaseous carbon dioxide.

After the substrate has been washed with supercritical carbon dioxide in a high pressure state for a predetermined time, the valves V1 and V3 are closed and the valve V2 is opened. By this valve processing,
The supercritical carbon dioxide in a high pressure state in the substrate cleaning tank 5 flows into the buffer tank 6, and the pressure in the substrate cleaning tank 5 decreases according to the capacity of the tank. Therefore, in the substrate cleaning tank 5, the substrate is cleaned with the expanded supercritical carbon dioxide in the low pressure state.

The supercritical carbon dioxide in a low pressure state contaminated with contaminants by the cleaning of the substrate is reduced in pressure by flowing into the buffer tank 6 and changes to a gas. The gas in the buffer tank 6 is too low in pressure and cannot be sent to the pressure reducer 7 as it is. Therefore, the compressor 9 increases the pressure of the gaseous carbon dioxide to a predetermined pressure required for sending the gas to the decompressor 7. The pressurized gaseous carbon dioxide sent from the compressor 9 is decompressed by the pressure reducer 7 and then separated into gaseous carbon dioxide and contaminants in the separation and recovery tank. The separated contaminants are discharged, and the gaseous carbon dioxide is recovered and reused in the condenser 2.

By this processing, substrate cleaning using supercritical carbon dioxide in a high-pressure state and substrate cleaning using supercritical carbon dioxide in a low-pressure state are performed. After a series of substrate cleaning processing is completed, the substrate is taken out of the substrate cleaning tank 5.

Here, as shown in the timing chart of FIG. 2, it is preferable that the opening and closing operations of the valves V1 and V3 and the valve V2 are alternately performed in a pulsed manner. Accordingly, the pressure in the substrate cleaning tank 5 can be changed in a pulsed manner in a short time, and the cleaning performance can be further improved by repeatedly applying the expansion energy to the contaminants.

As described above, according to the high-pressure processing apparatus according to one embodiment of the present invention, the pressure can be increased to a predetermined pressure necessary for sending the pressure to the pressure reducer 7 together with the buffer tank 6 capable of sufficiently reducing the pressure. A compressor 9 is provided, and valves V1 to V3 are provided.
The opening and closing operation of the is controlled appropriately. This makes it possible to realize high-performance and short-time substrate cleaning using a supercritical fluid in a low pressure state in addition to a supercritical fluid in a high pressure state.

Further, by controlling the opening and closing of the valves V1 and V3 and the opening and closing of the valve V2 alternately in a pulsed manner, it is possible to further improve the cleaning performance.

It should be noted that the present invention is not limited to the above-described embodiments and modifications, but can be implemented in other forms as described below.

(1) In the above embodiment, the case where the substrate cleaning is performed by the supercritical fluid in the low pressure state in the substrate cleaning tank 5 by the decompression process in the buffer tank 6 has been described. Is not limited to the change that maintains the state of the supercritical fluid described above. For example, the supercritical fluid is reduced to a pressure lower than the critical pressure Pc to convert the supercritical fluid into a gaseous state,
Alternatively, cooling may be performed simultaneously with depressurization to change the state to a two-phase state in which gas and liquid coexist, and it is possible to arbitrarily set the capacity of the buffer tank 6 according to the purpose of cleaning the target substrate.

(2) When only cleaning the substrate with a supercritical fluid in a low pressure state in the substrate cleaning tank 5, the valve V 3 is connected between the secondary side of the substrate cleaning tank 5 and the primary side of the pressure reducing device 7. It is not necessary to provide a pipe provided with.

(3) In the above embodiment, the decompressor 7 is disposed downstream of the buffer tank 6 so that the supercritical fluid is vaporized and then sent to the separation and recovery tank 8. After depressurizing in, gas-liquid separation may be performed.

(4) In the above embodiment, the processing fluid is supplied to the substrate cleaning tank 5 as a supercritical fluid.
The predetermined high pressure state supplied to the substrate cleaning tank 5 is 1 MPa
Any fluid may be used as long as it is at least the above, and preferably a fluid having properties of high density, high solubility, low viscosity, and high diffusivity. That is, if the pressure is 1 MPa or more, the depressurizing process in the buffer tank 6 can realize the processing in the substrate cleaning tank 5 in the low pressure state in addition to the high pressure state. Therefore, it goes without saying that the present invention can be implemented using a subcritical fluid or a high pressure gas. further,
The cleaning process can be suitably performed by supplying a processing fluid whose pressure is increased to 5 MPa or more. And the washing process is 5-30M
Pa is preferable, and more preferably 7.1 to 2
0 MPa.

(5) Although the high-pressure processing apparatus has been described for cleaning a substrate, it may be used for drying a substrate or developing a substrate. That is, the substrate after the rinsing cleaning (washing with water) is carried in and installed in the substrate cleaning tank 5. In the substrate cleaning tank 5, the water adhering to the substrate is dissolved and removed in a supercritical or subcritical high-pressure processing fluid. At this time, the inside of the substrate cleaning tank 5 is changed from a high pressure state to a low pressure state, and the moisture is blown off using the expansion force of the processing fluid, whereby the drying effect can be enhanced and the drying time can be shortened. After this,
The processing fluid is collected and reused similarly to the above embodiment.

In the substrate development, the silicon wafer on which the resist pattern has been formed is carried into the substrate cleaning tank 5 and installed. In the substrate cleaning tank 5, the resist pattern on the substrate is developed with a supercritical or subcritical high-pressure processing fluid. At this time, it is possible to increase the diffusion of the development processing by changing the inside of the substrate cleaning tank 5 from the high pressure state to the low pressure state, and it is possible to shorten the development processing time.

(6) The processing operation of the substrate is not limited to the case where the developing process, the cleaning process, and the drying process are independently performed, and the drying process may be continuously performed on the substrate after the developing process. May be implemented. Further, the cleaning process may be performed on the substrate after the drying process.

In addition, it is possible to make various design changes within the technical scope described in the claims.

As is apparent from the above description, according to the present invention, the pressure of the processing fluid in the processing tank in the high pressure state can be sufficiently reduced, and the pressure can be increased to the pressure required for downstream delivery. A booster is provided. This makes it possible to realize high-performance substrate processing using a processing fluid in a low-pressure state.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of a substrate cleaning apparatus according to an embodiment of the present invention.

FIG. 2 is a timing chart showing an example of an opening and closing operation of valves V1 to V3.

FIG. 3 is a diagram illustrating a supercritical fluid.

FIG. 4 is a block diagram showing an example of the configuration of a conventional apparatus for cleaning a substrate using a supercritical fluid.

[Explanation of symbols]

 1,11 ... cylinder 2,12 ... condenser 3,13 ... booster 4,14 ... heater 5,15 ... substrate washing tank 6 ... buffer tank 7,17 ... decompressor 8,18 ... separation and recovery tank 9 ... compression Machine V1-V3 ... Valve

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G02F 1/1333 500 G02F 1/1333 500 (72) Inventor Yusuke Muraoka Go up to Horikawa-dori Teranouchi, Kamigyo-ku, Kyoto-shi (72) Inventor: Kimitsutsu Saito 4-chome Tenjin Kitamachi 1-1-1 Dainippon Screen Manufacturing Co., Ltd. (72) Inventor Ryuji Kitamon 4-chome Horikawa-dori Teranouchi, Kamigyo-ku, Kyoto 1 Tenjin Kitamachi 1 Dainippon Screen Mfg. Co., Ltd. (72) Inventor Yoichi Inoue 2-3-3 Niihama, Araimachi, Takasago City, Hyogo Prefecture No. 1 Kobe Steel, Ltd. Takasago Works (72) Inventor Hisanori Oshiba 2-3-1, Niihama, Arai-cho, Takasago-shi, Hyogo Stock Inside the Kobe Steel, Ltd.Takasago Works (72) Inventor Katsumitsu Watanabe 2-3-1, Shinama, Araimachi, Takasago City, Hyogo Prefecture Inside the Kobe Steel Works Takasago Works, Ltd. (72) Inventor Masahiro Yamagata 2-chome, Araimachi, Takasago City, Hyogo Prefecture No.3-1 F-term (reference) in Kobe Steel, Ltd. Takasago Works 2H088 FA21 HA01 2H090 JC19 3B201 AA02 AA03 BB02 BB82 BB90 BB91 CC11 CD22

Claims (6)

[Claims] 1. A high-pressure processing apparatus for performing a predetermined process on a substrate using a processing fluid, comprising: a supply unit for supplying a processing fluid; and a processing fluid supplied from the supply unit, which is changed to a high-pressure state, A substrate processing unit configured to contact a substrate installed in a processing tank with a high-pressure processing fluid for processing; a decompression unit configured to reduce the pressure of the high-pressure processing fluid in the processing tank to a predetermined pressure; and a process reduced in pressure by the decompression unit. A high-pressure processing device, comprising: a pressure increasing unit configured to increase the pressure to a pressure required for sending the fluid downstream. 2. The processing fluid delivered from the pressure increasing section,
The high-pressure processing apparatus according to claim 1, further comprising a processing fluid recovery unit that recovers and reuses the processing fluid. 3. A high-pressure processing apparatus for performing a predetermined process on a substrate using a supercritical fluid, comprising: a supply unit for supplying a predetermined supercritical fluid; and a supercritical fluid supplied from the supply unit. A substrate processing unit for processing a substrate provided in a processing tank by contacting the substrate with a supercritical fluid; a decompression unit for depressurizing the supercritical fluid in the processing tank to a predetermined pressure; A high-pressure processing device, comprising: a pressure increasing unit configured to increase the pressure to a pressure required for sending the supercritical fluid downstream. 4. The high-pressure processing apparatus according to claim 3, further comprising a supercritical fluid recovery unit that recovers and reuses the supercritical fluid sent from the pressure increasing unit. 5. The apparatus according to claim 1, further comprising: a switching unit configured to switch an outflow path of the supercritical fluid in the processing tank to one of the supercritical fluid recovery unit and the decompression unit. When switched to the supercritical fluid recovery unit, the substrate is subjected to high pressure processing using the supplied supercritical fluid, and when switched to the decompression unit, using the depressurized supercritical fluid. The high-pressure processing apparatus according to claim 4, wherein the substrate is processed. 6. The high-pressure processing apparatus according to claim 5, wherein the switching unit switches the outflow path in a pulsed manner.