JP2002334825A - Device and method for treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and a method for treating a substrate, by which the drying under reduced pressure treatment time for a coated film formed on a substrate can be shortened and the coated film having uniform thickness can be formed, by promoting leveling of the coated film. SOLUTION: A drying under reduced pressure treatment unit (VD) 40 as an embodiment has a stage 63, on which a substrate G on which the coated film is formed, can be placed approximately horizontally, a chamber 60 in which the substrate G placed on the stage 63 and the stage 63 are housed and which is composed of an upper chamber 61 and a lower chamber 62, and an exhaust pump 66 for reducing pressure in the inside of the chamber 60. The inside of the chamber 60 is held in a fixed reduced atmosphere, under a state in which the whole surface of the stage 63 and the rear of the substrate G are brought into contact and the substrate G is placed on the stage 63, and the coated film is executed to drying under reduced pressure treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method for subjecting a coating film formed on a surface of a substrate such as a glass substrate for a liquid crystal display (LCD) or a semiconductor wafer to drying under reduced pressure.

[0002]

2. Description of the Related Art In recent years, in the manufacture of liquid crystal displays (LCDs), thinner and larger glass rectangular substrates have been used as substrates for the purpose of increasing the size, mass production and thinning of LCDs. In order to form a circuit pattern on the substrate, a photo resist is formed by applying a photoresist solution to the substrate, forming a resist film, exposing the resist film with a predetermined circuit pattern, and developing the resist film. Technology is used.

The formation of such a circuit pattern is performed using a resist coating / developing processing system in which a plurality of processing units are integrated. In such a system, first, the surface of the substrate is subjected to surface modification / cleaning treatment by ultraviolet irradiation as necessary, and then the cleaning unit performs brush cleaning and ultrasonic water cleaning. Thereafter, the substrate is subjected to a hydrophobic treatment (HMDS treatment) in an adhesion processing unit in order to enhance the stability of the resist, and subsequently, a resist coating is performed in a resist coating processing unit. Thus, the substrate on which the resist film is formed is subjected to pre-baking by a heating unit, exposure of a predetermined pattern by an exposure device, development processing by a development processing unit,
Post bake processing is sequentially performed in the heating unit, and a predetermined circuit pattern is formed on the substrate.

Here, the resist coating step will be described in more detail. First, the substrate subjected to the hydrophobic treatment is held substantially horizontally, and a predetermined amount of the resist liquid is discharged from a nozzle for discharging the resist liquid. While moving a predetermined position on the substrate surface while spreading the resist liquid over the entire substrate, a resist film is formed. Next, the substrate on which the resist film is formed is
The wafer is conveyed to a decompression chamber and kept under reduced pressure, and a decompression drying process for evaporating a part of the solvent contained in the resist film is performed. Subsequently, the substrate is transported to a peripheral edge resist removal unit, where the resist film formed on the peripheral edge portion of the substrate is removed, and then transported to a heating unit for pre-baking.

Here, as a reduced pressure drying unit for drying the substrate on which the resist film is formed under reduced pressure, for example, as shown in a sectional view of FIG. 5, a lower container 95a and a lid 95b provided so as to be able to move up and down are used. A chamber 95 having a stage 96 disposed therein is used. Since the substrate G coated with the resist film is transported while supporting the periphery of the opposite side of the substrate G from below, the stage G is mounted on the stage 96 so that the substrate G can be transported easily. The size is set smaller than the substrate G. Further, support pins 97 are provided at predetermined positions on the surface of the stage 96, and the substrate G is held in contact with the support pins 97 without directly contacting the surface of the stage 96. Lower container 9
An exhaust port 98 for exhausting the inside of the chamber 95 is provided in the bottom wall of 5a, for example.

[0006]

However, when the substrate G is supported by the holding pins 97 during the drying under reduced pressure, when the solvent contained in the resist film evaporates, the resist film takes heat of vaporization from the resist film. There has been a problem that the temperature of the film is lowered, so that the evaporation of the solvent becomes difficult to occur gradually, and a long time is required for the drying under reduced pressure. In addition, uniformity of the thickness distribution of the resist film during the reduced-pressure drying process, that is, so-called leveling is unlikely to occur, and therefore, there is a problem that the resist film has a thickness distribution.

[0007] The present invention has been made in view of such problems of the prior art, and it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of shortening a reduced-pressure drying processing time. It is another object of the present invention to provide a substrate processing apparatus and a substrate processing method that facilitate leveling of a coating film to form a coating film having a uniform thickness.

[0008]

According to the present invention, as a first invention, there is provided a substrate processing apparatus for drying a coating film formed on a surface of a substrate in a reduced-pressure atmosphere, wherein the substrate is disposed substantially horizontally. A stage that can be mounted on the stage, a chamber that houses the substrate mounted on the stage and the stage, and a decompression device that decompresses the inside of the chamber. A substrate processing apparatus, wherein the substrate is placed on the stage so as to come into contact with the substrate.

According to the present invention, as a second invention, there is provided a substrate processing apparatus for drying a coating film formed on a surface of a substrate in a reduced-pressure atmosphere by applying a predetermined processing liquid to the surface of the substrate. A coating processing section for forming a coating film, a reduced-pressure drying section for drying the substrate on which the coating film is formed in the coating processing section while maintaining the substrate in a reduced-pressure atmosphere, and coating a peripheral portion of the substrate processed in the reduced-pressure drying section A peripheral coating film removing unit for removing a film, wherein the reduced-pressure drying unit includes a stage capable of mounting the substrate substantially horizontally, and a chamber accommodating the substrate mounted on the stage and the stage therein. And a decompression device that decompresses the inside of the chamber, wherein the substrate is mounted on the stage such that the entire surface of the stage is in contact with the back surface of the substrate,
Is provided.

According to a third aspect of the present invention, there is provided a substrate processing apparatus for drying a coating film formed on a surface of a substrate in a reduced pressure atmosphere, wherein a flat plate is attached to the surface, A stage for holding the substrate substantially horizontally so that it comes into contact with the back surface of the substrate, a chamber for housing the substrate and the stage held on the flat plate, and an exhaust port formed in the chamber. And a pressure reducing device for reducing the pressure in the chamber.

According to the present invention, as a fourth invention, there is provided a substrate processing method for drying a coating film formed on a surface of a substrate under reduced pressure, wherein a first step of forming a coating film on the surface of the substrate, A second step of holding the substrate in a reduced pressure atmosphere while being placed on the stage such that the back surface of the substrate on which the substrate is formed is in contact with the entire surface of the stage, and drying the coating film under reduced pressure; A third step of removing the coating film of the portion,
A substrate processing method characterized by having the following.

According to the substrate processing apparatus and the substrate processing method of the present invention, since the entire surface of the stage or the flat plate is in contact with the back surface of the substrate on which the coating film is formed, the substrate is subjected to a vacuum drying process. Even when the solvent vapor evaporates heat from the coating film and the substrate when the solvent evaporates, the temperature of the substrate and the coating film hardly decreases due to the heat transfer from the stage or the flat plate to the substrate. The environment in which the water is easily evaporated is maintained, the time for the drying under reduced pressure is reduced, and the throughput can be improved. In addition, when the coating film has irregularities, heat transfer from the stage or the flat plate to the substrate causes a difference between the temperature of the concave portion and the temperature of the convex portion in the coating film, causing convection in the coating film, and Due to the convection, the unevenness of the resist film becomes small, and the film thickness becomes uniform.

[0013]

Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, a description will be given of a resist coating / developing processing system for an LCD substrate to which the substrate processing apparatus of the present invention is applied.

FIG. 1 shows a resist coating and developing system 1.
00 is a plan view of FIG. The resist coating / developing processing system 100 includes a cassette station 1 on which a cassette C accommodating a plurality of substrates G is mounted, and a plurality of processing units for performing a series of processes including resist coating and developing on the substrates G. And an interface unit 3 for transferring a substrate G between the processing unit 2 and an exposure apparatus (not shown). A cassette station 1 and an interface unit 3 are disposed at both ends of the processing unit 2, respectively. .

The cassette station 1 has a transport mechanism 1 for transporting the substrate G between the cassette C and the processing section 2.
0 is provided. Then, the cassette C is loaded and unloaded at the cassette station 1. Also, the transport mechanism 1
0 is a transport path 10 provided along the cassette arrangement direction.
A transfer arm 11 is provided which is movable on the substrate a. The transfer arm 11 transfers the substrate G between the cassette C and the processing unit 2.

The processing section 2 is divided into a front section 2a, a middle section 2b, and a rear section 2c.
13 and 14. Each processing unit is arranged on both sides of these transport paths. The relay sections 15 and 16 are provided between them.

The front section 2a is provided with a main transfer device 17 movable along the transfer path 12, and two cleaning processing units (SCR) 21a and 21b are provided on one side of the transfer path 12.
Are disposed, and an ultraviolet irradiation unit (UV) and a cooling processing unit (COL) are provided on the other side of the transport path 12.
A processing block 25 that is stacked in stages, a processing block 26 in which heating units (HP) are stacked in two stages, and a processing block 27 in which cooling units (COL) are stacked in two stages are arranged.

The middle section 2b is provided with a main transfer device 18 movable along the transfer path 13. On one side of the transfer path 13, a resist coating unit (CT) 22,
A reduced-pressure drying processing unit (VD) 40 and a peripheral resist removing unit (edge remover; ER) 23 for removing the resist at the peripheral portion of the substrate G are integrally provided and arranged. I have. In the coating system processing unit group 80, after the resist is applied to the substrate G by the resist coating processing unit (CT) 22,
The substrate G is transported to the reduced-pressure drying processing unit (VD) 40 and dried, and thereafter, the edge remover (ER) 2
3, the peripheral edge resist removing process is performed.

On the other side of the transport path 13, a processing block 28 in which heating processing units (HP) are stacked in two stages, a heating processing unit (HP) and a cooling processing unit (COL)
Is a processing block 29 in which an adhesion processing unit (AD) and a cooling processing unit (COL) are vertically stacked.
Is arranged.

Further, the rear section 2c is provided with a main transport device 19 movable along the transport path 14,
Is provided with three development processing units (DEV) 24a
24b and 24c are arranged, and on the other side of the transport path 14, a processing block 31 in which a heating processing unit (HP) is stacked in two stages, and both a heating processing unit (HP) and a cooling processing unit (COL) ) Are disposed on top of each other.

The processing unit 2 includes a cleaning unit (SCR) 21a, a resist coating unit (CT) 22, and a reduced-pressure drying unit (V) on one side of the transport path.
D) Only spinner units such as 40, an edge remover (ER) 23, and a development processing unit (DEV) 24a are arranged, and a heat processing unit (H
P) and only a thermal processing unit such as a cooling processing unit (COL). Also, the relay unit 15
A chemical solution supply unit 34 is disposed at a portion 16 on the side where the spinner system unit is disposed, and a space 35 for performing maintenance of the main transport device is further provided.

Each of the main transfer devices 17, 18, and 19 has an X-axis drive mechanism, a Y-axis drive mechanism, and a vertical Z-axis drive mechanism in two directions in a horizontal plane, and further rotates about the Z axis. , And each has an arm for supporting the substrate G.

The main transfer device 17 has a transfer arm 17a, transfers the substrate G to and from the transfer arm 11 of the transfer mechanism 10, and loads and unloads the substrate G to and from each processing unit in the front section 2a. Has a function of transferring the substrate G to and from the relay unit 15. Further, the main transfer device 18 has a transfer arm 18a, transfers the substrate G to and from the relay unit 15, and loads and unloads the substrate G to and from each processing unit in the middle unit 2b. And a function of transferring the substrate G during the transfer. Further, the main transfer device 19 has a transfer arm 19a, transfers the substrate G to and from the relay unit 16, loads and unloads the substrate G to and from the respective processing units in the rear-stage unit 2c, and further connects to the interface unit 3. And a function of transferring the substrate G during the transfer. The relay unit 1
5 and 16 also function as cooling plates.

The interface section 3 includes an extension 36 for temporarily holding the substrate when transferring the substrate to and from the processing section 2, and two buffer stages 37 provided on both sides thereof for disposing a buffer cassette.
And a transport mechanism 38 for loading and unloading the substrate G between these and an exposure apparatus (not shown). Transport mechanism 38
Is provided with a transfer arm 39 movable along a transfer path 38a provided along the direction in which the extension 36 and the buffer stage 37 are arranged. The transfer arm 39 allows the transfer of the substrate G between the processing unit 2 and the exposure apparatus. Done.

By integrating and integrating the processing units in this manner, space can be saved and processing efficiency can be improved.

In the resist coating / developing processing system configured as described above, the substrate G in the cassette C is transported to the processing section 2, and the processing section 2 firstly performs the ultraviolet irradiation unit (in the processing block 25 of the former stage 2 a). UV) to perform surface modification and cleaning processing, and after cooling in the cooling processing unit (COL), cleaning processing units (SCR) 21a and 21
b, is subjected to scrub cleaning, and is heated and dried in any one of the heat treatment units (HP) in the processing block 26, and then is cooled in any one of the cooling processing units (CO
L).

Thereafter, the substrate G is transported to the middle section 2b,
In order to improve the fixability of the resist, the treatment block 30 is subjected to a hydrophobic treatment (HMDS treatment) in the upper adhesion processing unit (AD), and then cooled in the lower cooling processing unit (COL). Next, in the resist coating unit (CT) 22, a resist is coated on the substrate G.

In this resist coating step, for example, before supplying the resist liquid to the substrate G, a thinner or the like is supplied to the substrate G to improve the wettability of the surface of the substrate G with respect to the resist liquid. A nozzle for discharging the resist solution is scanned over the substrate so as to draw a predetermined pattern so that the resist solution is uniformly applied to the surface of G, and the resist solution is applied to the surface of the substrate G to form a resist film. I do.

The substrate G coated with the resist film is transported to a reduced-pressure drying unit (VD) 40, where it is subjected to a reduced-pressure drying process, and thereafter, an edge remover (ER).
The resist is then removed from the peripheral portion of the substrate G. Thereafter, the substrate G is pre-baked in one of the heat processing units (HP) in the middle section 2b, and the lower cooling processing unit (CO) in the processing block 29 or 30 is processed.
L).

Next, the substrate G is transferred from the relay unit 16 to the exposure device via the interface unit 3 by the main transfer unit 19, where a predetermined pattern is exposed. And
The substrate G is carried in again via the interface unit 3,
If necessary, the processing blocks 31, 32, 3 of the subsequent stage 2c
After the post-exposure bake processing is performed in any one of the heat processing units (HP), the development processing is performed in any of the development processing units (DEV) 24a, 24b, and 24c to form a predetermined circuit pattern.

The developed substrate G is subjected to post-baking in one of the heat treatment units (HP) in the subsequent stage 2c, and then to any of the cooling units (CO).
L) and is stored in a predetermined cassette C on the cassette station 1 by the main transfer devices 19, 18, and 17 and the transfer mechanism 10.

Next, the reduced-pressure drying processing unit (VD) 40, which is one mode of the substrate processing apparatus of the present invention, will be described together with the overall configuration of the coating processing unit group 80. FIG.
3 is a schematic plan view showing the coating system processing unit group 80, and FIG. 3 is a schematic side view showing the coating system processing unit group 80.

As shown in FIGS. 2 and 3, the resist coating unit (CT) 22, the vacuum drying unit (VD) 40, and the edge remover (ER) 2
3 are integrally arranged in parallel on the same stage. The substrate G on which the resist has been applied by the resist coating unit (CT) 22 is transported by a pair of transport arms 41 to a reduced-pressure drying unit (VD) 40 and dried by the reduced-pressure drying unit (VD) 40. The substrate G is transferred to an edge remover (ER) 23 by a pair of transfer arms 42.
To be transported.

Resist coating unit (CT) 22
Is a stage 51 for holding the substrate G, the substrate G is carried into a resist coating unit (CT) 22, and the substrate G on which the resist film is formed is dried under reduced pressure (VD) 4.
In order to hold the substrate G at a predetermined distance above the stage 51 when transporting the substrate G to the stage 51, a plurality of lift pins
2, a resist discharge nozzle 53 for discharging a resist liquid onto the surface of the substrate G,
It has a nozzle scanning mechanism 54 for scanning in the direction, and a cup 55 provided below the stage 51. On the surface of the stage 51, support pins 51a that contact the substrate G are provided at a plurality of locations.

The resist discharge nozzle 53 is connected to a resist supply unit (not shown) through a resist supply pipe (not shown). The nozzle scanning mechanism 54 includes a Y-axis guide 56a / 56b extending in the Y-axis direction, an X-axis guide 57 extending in the X-axis direction and extending over the Y-axis guides 56a / 56b, It has a drive mechanism (not shown) that scans 57 in the Y-axis direction, and a transport body 58 attached to the X-axis guide 57 and capable of scanning in the X-axis direction. The resist discharge nozzle 53 is attached to the carrier 58. For example, with the X-axis guide 57 stationary, the carrier 58 is ejected from the substrate G while discharging a predetermined amount of resist liquid from the resist discharge nozzle 53. By alternately repeating an X-axis scan for scanning in the X-axis direction from one X-axis end to another X-axis direction and a Y-axis scan for moving the X-axis guide 57 by a predetermined distance in the Y-axis direction. A resist solution can be applied to the entire surface of the substrate G.

The vacuum drying processing unit (VD) 40 has a chamber 60 for accommodating the substrate G.
Reference numeral 0 denotes a lower chamber 62 and an upper chamber 61 (see FIG. 3) provided so as to cover the lower chamber 62 and keeping the processing space inside the lower chamber 62 airtight. Lower chamber 6
The stage 2 is provided with a stage 63 for mounting the substrate G, and an exhaust port 64 is formed in the bottom wall of the lower chamber 62. An exhaust pipe 65 (see FIG. 3) connected to the exhaust port 64 is connected to an exhaust pump 66 such as a turbo-molecular exhaust pump, and the upper chamber 61 and the lower chamber 62 are in close contact with each other to evacuate the processing space therein. By operating and evacuating the exhaust pump 66, the inside of the processing space of the chamber 60 can be depressurized to a predetermined degree of vacuum.

The stage 63 is smaller than the size of the substrate G, the surface thereof is flat, and outside the stage G, lift pins 63a which can be raised and lowered by a lifting mechanism 67 are provided. The transfer arms 41 and 42 are configured to hold the substrate G at the peripheral edge of the opposite side of the substrate G. When the lift pins 63a are raised to a predetermined height, the transfer pins 41a and 42 The transfer of the substrate G is performed with the substrate. When the lift pins 63a holding the substrate G are lowered, the entire surface of the stage 63 contacts the back surface of the substrate G, and the substrate G is held. Substrate G
Does not contact only the periphery of the stage 63. In addition,
The stage 63 is desirably the same as or larger than the outermost periphery of the product area of the substrate G, and the peripheral area of the substrate G that does not contact the surface of the stage 63 does not include the product area of the substrate G. It is desirable.

A stage 71 for mounting the substrate G is provided on the edge remover (ER) 23. Two alignment mechanisms 72 for positioning the substrate G are provided at two corners on the stage 71. Is provided. Further, four remover heads 73 are provided on the four sides of the substrate G to remove excess resist from the edges of the four sides of the substrate G, respectively. Each of the remover heads 73 has a substantially U-shaped cross section so as to discharge a thinner from the inside, and can be moved along four sides of the substrate G by a moving mechanism (not shown). Thus, each remover head 73 can move along each side of the substrate G and discharge the thinner, and can remove excess resist attached to the edges of the four sides of the substrate G.

In the coating system processing unit group 80 configured as described above, the substrate G is processed as follows. First,
The substrate is transferred from the transfer arm 18a to the lift pins 52 with the lift pins 52 raised, and the lift pins 52 are lowered to hold the substrate G on the stage 51. With the X-axis guide 57 stationary, the resist discharge nozzle 5
While discharging a predetermined amount of resist solution from
An X-axis scan that scans the substrate 8 in the X-axis direction from one X-axis end to another X-axis end of the substrate G, and a Y-axis scan that moves the X-axis guide 57 by a predetermined distance in the Y-axis direction. Repeat alternately. The resist liquid applied to the substrate G spreads around depending on physical properties such as surface tension, viscosity, and wettability, and the resist liquid is applied to the entire surface of the substrate G. At this time, there is a difference between the thickness of the resist film in the locus portion where the resist discharge nozzle 53 has passed and the thickness of the portion covering the surface of the substrate G as the applied resist film spreads around.

The substrate G on which the resist solution has been applied is transferred to the transfer arm 41 by raising the lift pins 52, and is further transferred from the transfer arm 41 to a reduced-pressure drying unit (VD) 4.
At 0, it is lifted to a predetermined height and delivered to the lift pin 63a that has been waiting. By lowering the lift pins 63a, the substrate G is held so that the entire surface of the stage 63 contacts the back surface of the substrate G. The upper chamber 61 is lowered to bring the upper chamber 61 and the lower chamber 62 into close contact with each other, and the formed processing space is exhausted by operating the exhaust pump 66. In this way, the inside of the processing space is reduced to a predetermined degree of vacuum and maintained for a predetermined time, and the resist film is dried by evaporating a solvent such as a thinner and other solvents.

Such a vacuum drying unit (VD)
During the drying under reduced pressure by 40, generally, the temperature of the stage 63 becomes higher than the temperature of the substrate G because the solvent vapor removes heat of vaporization from the coating film and the substrate G when the solvent evaporates. However, since the entire surface of the stage 63 is in contact with the back surface of the substrate, heat transfer from the stage 63 to the substrate G occurs. In the case where the resist film has irregularities due to this heat transfer, the concave portions are easily heated because the concave portions are close to the surface of the substrate G, and conversely, the convex portions are unlikely to be heated because they are separated from the surface of the substrate G. . In this way, a temperature difference is generated between the concave portion and the convex portion of the resist film, and a convection of the resist liquid is generated in the resist film, and the flow of the resist liquid reduces the unevenness of the resist film, thereby making the film thickness uniform.

Further, as in the prior art, when the temperature of the resist film is reduced during the reduced pressure drying process, there is a problem that the solvent is hardly evaporated and a long processing time is required. In the VD) 40, since the temperature of the substrate G and the resist film is prevented from lowering due to the heat transfer from the stage 63 to the substrate G, the solvent and the like in the resist film are kept in a state where evaporation easily occurs. Time can be reduced. In addition,
An electric heater is built in the stage 63 and the stage 63
, The temperature of the substrate G and the resist film can be more reliably prevented from lowering.

The substrate G dried under reduced pressure in the reduced-pressure drying unit (VD) 40 is lifted to a predetermined height by lift pins 63a, transferred to the transfer arm 42, and transferred to the edge remover (ER) 23. It is placed on a stage 71 and aligned by an alignment mechanism 72. And four remover heads 7
3 is moved along each side of the substrate G while discharging the thinner and sucking the thinner which has been discharged and the resist dissolved by the thinner. Is removed. After that, the substrate G on which the resist film is formed in the predetermined range is exposed and developed as described above.

Next, a vacuum drying processing unit (VD) 40
Another embodiment will be described. FIG. 4 is a schematic sectional view of a reduced-pressure drying processing unit (VD) 40 ′.
And a lower chamber 62, a stage 81 larger than the size of the substrate G, and a flat plate 8 provided on the stage 81.
2, a lift pin 83 provided to be able to move up and down so as to penetrate the outer periphery of the stage 81, and an elevating mechanism 84 for moving the lift pin 83 up and down.

In the vacuum drying processing unit (VD) 40 ′, the entire surface of the flat plate 82 contacts the back surface of the substrate G,
Further, the lift pins 83 come into contact with the periphery of the substrate G,
The size of the flat plate 82 is set smaller than the size of the substrate G so as to be able to move up and down. In the case where the substrate G is placed on the flat plate 82 as described above, for example, when it is desired to change the material of the portion that comes into contact with the substrate G, it is necessary only to replace the flat plate 82 without replacing the stage 81. can do. Further, the size of the flat plate 82 can be easily changed according to the size of the substrate G. If holes for penetrating the lift pins 83 are provided at a plurality of locations on the stage 81, the position of the lift pins 83 can be easily changed as the size of the substrate G is changed. It is desirable that the size of the flat plate 82 is equal to or larger than the outermost periphery of the product area of the substrate G.

If the temperature of the flat plate 82 can be adjusted by incorporating an electric heater inside the flat plate 82,
It is possible to prevent the temperature of the substrate G and the resist film from lowering due to the evaporation of the solvent from the resist film during the drying under reduced pressure.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example, in the reduced-pressure drying unit (VD) 40, it is needless to say that the stage 63 may be made larger than the substrate G so that the lift pins 63a penetrate the stage 63. In this case, the stage 63
Of the substrate G and the resist film can be prevented from lowering in temperature. Also, the upper chamber 61
An electric heater may be built in the resist film. By applying heat to the resist film and the substrate G from the front surface side of the substrate G, it is possible to suppress a decrease in the temperature of the resist film. Further, an electric heater may be built in the lower chamber 62 to suppress a decrease in the temperature of the lower chamber 62.

The material and size of the stage 63 and the flat plate 82,
It is preferable that the control conditions of the electric heater and the exhaust pump 66 are appropriately selected so as to balance with the amount of heat deprived from the substrate G and the resist film, thereby further reducing the unevenness of the resist film and making the resist film uniform. It is possible. When controlling the electric heater and the exhaust pump, a temperature sensor (not shown) is provided in the chamber 60, the stage 63, and the flat plate 82, and the electric heater and the exhaust pump are controlled based on the detection result of the temperature sensor. Is also desirable.

In the above embodiment, the case where the resist film is formed on the surface of the substrate G by the scan coating method has been described. However, the method of forming the resist film is not limited to such spin coating. Not
For example, spin coating in which a predetermined amount of a resist solution is applied to a substantially central portion of the substrate G and the substrate G is rotated to spread the resist solution over the entire substrate G may be used. Further, the substrate processing apparatus of the present invention is not limited to the purpose of forming a predetermined circuit pattern in the photolithography process,
It can also be used when an interlayer insulating film is formed using a predetermined coating solution. Furthermore, although an LCD substrate has been described as a substrate, the substrate may be a semiconductor wafer or the like.

[0050]

As described above, according to the substrate processing apparatus and the substrate processing method of the present invention, since the entire surface of the stage or the flat plate is in contact with the back surface of the substrate on which the coating film is formed, the pressure of the substrate is reduced. When the solvent vapor evaporates from the coating film and the substrate when the solvent evaporates during the drying process,
The temperature of the substrate and the coating film is hardly lowered due to heat transfer from the stage or the flat plate to the substrate, thereby maintaining an environment where the solvent is easily evaporated, shortening the vacuum drying process time, and improving the throughput. And an excellent effect of being able to be obtained. Further, when the coating film has irregularities, a difference in temperature between the concave portion and the convex portion of the coating film occurs due to heat transfer from the stage or the flat plate to the substrate, and convection occurs in the coating film. Due to this convection, the unevenness of the resist film is reduced, and the film thickness is made uniform. As a result, an excellent effect that the quality of the substrate can be maintained at a high level and the occurrence frequency of defective products can be reduced can be obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing a resist coating / developing processing system including a reduced-pressure drying processing unit (VD), which is one embodiment of a substrate processing apparatus of the present invention.

FIG. 2 is a plan view showing a schematic structure of a coating system processing unit group included in the resist coating / developing processing system shown in FIG.

FIG. 3 is a side view showing a schematic structure of a coating system processing unit group included in the resist coating / developing processing system shown in FIG. 1;

FIG. 4 is a cross-sectional view illustrating another embodiment of a reduced-pressure drying processing unit included in a coating system processing unit group.

FIG. 5 is a sectional view showing a schematic structure of a conventional reduced-pressure drying processing unit.

[Explanation of symbols]

22; resist coating processing unit (CT) 23; peripheral resist removing unit (edge remover;
ER) 40/40 '; Vacuum drying unit (VD) 41/42; Transfer arm 61; Upper chamber 62; Lower chamber 63; Stage 63a; Lift pin 64; Exhaust port 65; Exhaust pipe 66; Exhaust pump 80; Processing unit group 81; Stage 82; Flat plate 83; Lift pin 84; Lifting mechanism 100; Resist coating / developing processing system G; Substrate (LCD substrate)

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) B05D 3/10 B05D 3/12 A 5F046 3/12 F26B 5/04 F26B 5/04 G03F 7/38 501 G03F 7/38 501 H01L 21/30 565 (72) Inventor Yoshihiko Iwasaki 5-3, Akasaka, Minato-ku, Tokyo TBS Release Center Tokyo Electron Limited F-term (reference) 2H096 AA25 AA28 CA20 JA02 LA30 3L113 AA03 AB10 AC23 AC35 BA34 CA08 CB15 DA10 4D075 AC07 AC08 AC71 AC84 AC88 BB20Z BB56Z DA06 DB13 DB14 DC22 DC24 EA45 4F041 AA01 AA02 AA05 AA06 AB02 BA59 4F042 AA01 AA02 AA07 AA08 CC06 CC09 DC01 DD20 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25 DF25

Claims (9)

[Claims] 1. A substrate processing apparatus for drying a coating film formed on a surface of a substrate in a reduced-pressure atmosphere, comprising: a stage capable of mounting a substrate substantially horizontally; a substrate mounted on the stage; A chamber accommodating the stage therein; and a decompression device configured to decompress the inside of the chamber, wherein the substrate is placed on the stage such that the entire surface of the stage contacts the back surface of the substrate. Substrate processing apparatus. 2. A substrate processing apparatus for drying a coating film formed on a surface of a substrate in a reduced-pressure atmosphere, comprising: a coating processing unit for forming a coating film by coating a predetermined processing liquid on the surface of the substrate; A reduced-pressure drying unit for drying the substrate on which the coating film is formed in the coating processing unit while maintaining the substrate in a reduced-pressure atmosphere; and a peripheral coating film removing unit for removing the coating film on the peripheral portion of the substrate processed in the reduced-pressure drying unit. And a stage capable of placing the substrate substantially horizontally; a chamber accommodating the substrate mounted on the stage and the stage therein; and a reduced pressure for decompressing the inside of the chamber. And a device, wherein the substrate is placed on the stage such that the entire surface of the stage is in contact with the back surface of the substrate. 3. A first substrate transfer device for transferring a substrate between the coating processing unit and the reduced-pressure drying unit, and a first substrate transfer device for transferring a substrate between the reduced-pressure drying unit and the peripheral coating film removing unit. And a lift pin provided outside the stage and abutting against a peripheral portion of the substrate to lift the substrate, wherein the first and second substrates are moved in a state where the lift pins are raised. 3. The substrate processing apparatus according to claim 2, wherein the transfer of the substrate is performed between the substrate transfer device and the lift pins. 4. The coating processing section comprises: a discharge nozzle for discharging a processing liquid onto a substrate; and a drive mechanism for causing the discharge nozzle to scan the substrate in a predetermined pattern. 4. The substrate processing apparatus according to claim 2, wherein the driving mechanism is operated while discharging the liquid to form a coating film on the substrate. 5. 5. The substrate processing apparatus according to claim 1, wherein the stage has a built-in electric heater, and the temperature of the stage can be adjusted. 6. A substrate processing apparatus for drying a coating film formed on a surface of a substrate in a reduced-pressure atmosphere, wherein a flat plate is mounted on the surface, and the entire surface of the flat plate is brought into contact with the back surface of the substrate. A stage that holds the substrate substantially horizontally, a chamber that houses the substrate held on the flat plate and the stage, and a decompression device that decompresses the inside of the chamber through an exhaust port formed in the chamber. A substrate processing apparatus comprising: 7. A lift pin is provided to abut on a peripheral portion of the substrate and move up and down the substrate so that the substrate comes into contact with or separate from the flat plate so as to penetrate the stage outside the flat plate. The substrate processing apparatus according to claim 6, wherein: 8. The substrate processing apparatus according to claim 6, wherein the flat plate has a built-in electric heater, and the temperature of the flat plate can be adjusted. 9. A substrate processing method for drying a coating film formed on a surface of a substrate under reduced pressure, comprising: a first step of forming a coating film on the surface of the substrate; A second step of drying the coating film under reduced pressure while maintaining the substrate in a reduced pressure atmosphere while being placed on a stage so as to be in contact with the entire surface of the substrate, and a third step of removing the coating film on the peripheral portion of the substrate subjected to the reduced pressure drying process And a substrate processing method.