JP2002324669A - Organic electroluminescent element - Google Patents

Organic electroluminescent element

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Publication number
JP2002324669A
JP2002324669A JP2001125367A JP2001125367A JP2002324669A JP 2002324669 A JP2002324669 A JP 2002324669A JP 2001125367 A JP2001125367 A JP 2001125367A JP 2001125367 A JP2001125367 A JP 2001125367A JP 2002324669 A JP2002324669 A JP 2002324669A
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JP
Japan
Prior art keywords
organic
substrate
organic electroluminescent
light emitting
electroluminescent device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001125367A
Other languages
Japanese (ja)
Inventor
Toyoyasu Tadokoro
豊康 田所
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Seiki Co Ltd
Original Assignee
Nippon Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Seiki Co Ltd filed Critical Nippon Seiki Co Ltd
Priority to JP2001125367A priority Critical patent/JP2002324669A/en
Publication of JP2002324669A publication Critical patent/JP2002324669A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an organic electroluminescent element which can be easily formed and enjoys stable characteristics. SOLUTION: The organic electroluminescent element, structured with one or more organic layers pinched by a positive electrode 11 and a negative electrode 16 on a substrate 10, can emit light at least from one side. The organic layer is provided with a luminous layer 14 formed by depositing an organic phosphor material with a host material and a guest material in mixing ratio of 500 to 1 in weight on the substrate at a speed of several nm/sec by resistive heating.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、有機電界発光素子
(OLED)に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to an organic electroluminescent device (OLED).

【0002】[0002]

【従来の技術】有機化合物から成る発光層を有するOL
EDは、直流低電圧駆動を実現するものとして注目され
ており、例えば特公平6−32307号公報には、透光
性ガラスから成る基板の上面にインジウムスズ酸化物
(ITO)の半透明被膜から成る陽極を形成し、この上に
正孔注入層、発光層、アルミニュウム(Al)の被膜から
成る陰極を順次形成し、前記陽極と前記陰極との間に電
源を接続することにより、前記陽極で発生した正孔は前
記正孔注入層と前記発光層との界面へ伝達され、ここで
前記陰極から伝達された電子と結合して、可視光線を発
する構成が開示されている。
2. Description of the Related Art OL having a light emitting layer composed of an organic compound
EDs have been attracting attention for realizing DC low-voltage driving. For example, Japanese Patent Publication No. 6-32307 discloses that an indium tin oxide (ITO) semi-transparent film is formed on the upper surface of a substrate made of a translucent glass. An anode is formed, and a hole injection layer, a light emitting layer, and a cathode made of an aluminum (Al) film are sequentially formed thereon, and a power source is connected between the anode and the cathode to form an anode. The disclosed structure discloses that the generated holes are transmitted to the interface between the hole injection layer and the light emitting layer, where the holes are combined with the electrons transmitted from the cathode to emit visible light.

【0003】また、正孔注入を促進させるために、前記
正孔注入層と前記発光層との間に、正孔輸送層を介在さ
せる構成のOLEDや、前記正孔注入層と前記正孔輸送
層とを一体化した正孔注入・輸送層とする構成のOLE
Dも知られており、前記構成と同様に、前記陽極で発生
した正孔は前記正孔注入層と前記発光層との界面へ伝達
され、ここで前記陰極から伝達された電子と結合して、
可視光線を発し、この発光は、前記基板を通して前記O
LEDの外部へ照射される。
In order to promote hole injection, an OLED having a structure in which a hole transport layer is interposed between the hole injection layer and the light emitting layer, or an OLED having the hole injection layer and the hole transport layer OLE with a hole injection / transport layer integrated with a layer
D is also known, and similarly to the above configuration, holes generated at the anode are transmitted to the interface between the hole injection layer and the light emitting layer, where the holes are combined with electrons transmitted from the cathode. ,
Emits visible light, which is emitted through the substrate
The light is emitted to the outside of the LED.

【発明が解決しようとする課題】[Problems to be solved by the invention]

【0004】ところで、前記発光層は、ホスト材料に微
量のゲスト材料をドーピングしたものであるが、これを
形成するに際しては、前記ホスト材料と前記ゲスト材料
とを個別の坩堝に入れて各々を加熱する所謂共蒸着法が
用いられていた(例えば特開平11−204261号公
報参照)。
The light-emitting layer is formed by doping a host material with a small amount of a guest material. When forming the light-emitting layer, the host material and the guest material are put into individual crucibles and heated individually. A so-called co-evaporation method has been used (see, for example, JP-A-11-204261).

【0005】斯かる共蒸着法では、前記ホスト材料と前
記ゲスト材料との混合比率が大きい、例えば重量比10
0:1以上になると、前記ゲスト材料の蒸着を安定に制
御することが困難となり、発光特性や温度特性などの特
性の再現性が悪くなるという問題があった。
In such a co-evaporation method, the mixing ratio of the host material and the guest material is large, for example, a weight ratio of 10%.
When the ratio is 0: 1 or more, it is difficult to stably control the deposition of the guest material, and the reproducibility of characteristics such as light emission characteristics and temperature characteristics is deteriorated.

【0006】また、『月刊ディスプレイ1998年4月号』
の第55〜58ページに掲載された「混合単層蒸着膜を用い
た有機EL素子」の中において第56ページには、ホール
輸送材料TPD、電子輸送性発光材料のAlq3および発光
材料のDCMをあらかじめ目標の混合比で混合してある
粉体を蒸着ボード(前記坩堝に相当)に充填し真空中で
蒸発させる混合単層型のOLEDが開示されている。
[0006] Also, "Monthly Display April 1998"
Among the "organic EL devices using a mixed single-layer deposited film" described on pages 55 to 58, page 56 includes a hole transporting material TPD, an electron transporting luminescent material Alq3, and a luminescent material DCM. A mixed single-layer type OLED in which powder previously mixed at a target mixing ratio is filled in a vapor deposition board (corresponding to the crucible) and evaporated in a vacuum is disclosed.

【0007】斯かる混合単層型では、成膜後の混合比は
前記蒸着ボードへの充填比とほぼ一致することが可能で
あり、前記共蒸着の問題を改善することができるもの
の、前記蒸着ボードを10秒以内に摂氏約400度まで上昇
させて約20nm/秒の蒸着速度で行う必要があり、蒸着速
度が速いことに起因して膜の均一性の確保が困難であ
り、また大面積の作成には不向きであるという問題があ
った。
In such a mixed single-layer type, the mixing ratio after film formation can substantially match the filling ratio to the vapor deposition board, and although the problem of co-deposition can be improved, It is necessary to raise the board to about 400 degrees Celsius within 10 seconds and perform it at a deposition rate of about 20 nm / second, and it is difficult to ensure uniformity of the film due to the high deposition rate. There was a problem that it was not suitable for the creation of.

【0008】この発明は、容易に形成でき、安定した特
性が得られるOLEDの提供を目的とする。
An object of the present invention is to provide an OLED which can be easily formed and has stable characteristics.

【0009】[0009]

【課題を解決するための手段】前記課題を解決するた
め、本発明のOLEDは、請求項1に記載のように、基
板上に陽極と陰極とで挟んだ少なくとも1層以上の有機
層で構成される少なくとも片側より光を取り出す事がで
きる有機電界発光素子であって、前記有機層はホスト材
料とゲスト材料とが微量ドーパントの関係にある有機蛍
光体材料を前記基板に蒸着させて形成する発光層を有す
るものである。
According to a first aspect of the present invention, there is provided an OLED comprising at least one organic layer sandwiched between an anode and a cathode on a substrate. An organic electroluminescent device capable of extracting light from at least one side, wherein the organic layer is formed by vapor-depositing an organic phosphor material in which a host material and a guest material are in a minor dopant relationship on the substrate. It has a layer.

【0010】また、請求項2に記載のように、基板上に
陽極と陰極とで挟んだ少なくとも1層以上の有機層で構
成される少なくとも片側より光を取り出す事ができる有
機電界発光素子であって、前記有機層はホスト材料とゲ
スト材料と微量ドーパントの関係にある有機蛍光体材料
を抵抗加熱法により前記基板に蒸着させて形成する発光
層を有するものである。
According to a second aspect of the present invention, there is provided an organic electroluminescent device capable of extracting light from at least one side comprising at least one organic layer sandwiched between an anode and a cathode on a substrate. The organic layer has a light emitting layer formed by vapor-depositing an organic phosphor material having a relationship between a host material, a guest material and a trace dopant on the substrate by a resistance heating method.

【0011】また、請求項3に記載のように、基板上に
陽極と陰極とで挟んだ少なくとも1層以上の有機層で構
成される少なくとも片側より光を取り出す事ができる有
機電界発光素子であって、前記有機層はホスト材料とゲ
スト材料と微量ドーパントの関係にある有機蛍光体材料
を真空蒸着法により前記基板に蒸着させて形成する発光
層を有するものである。
According to a third aspect of the present invention, there is provided an organic electroluminescent device capable of extracting light from at least one side composed of at least one organic layer sandwiched between an anode and a cathode on a substrate. The organic layer has a light emitting layer formed by depositing an organic phosphor material having a relationship of a trace amount of dopant with a host material, a guest material, on the substrate by a vacuum deposition method.

【0012】特に、請求項1から請求項3において請求
項4に記載のように、前記微量ドーパントは、前記ホス
ト材料と前記ゲスト材料との混合比率が重量比100:
1以上であるものである。
[0012] In particular, as set forth in claim 1 to claim 3, in the trace dopant, the mixing ratio of the host material and the guest material is 100: 100 by weight.
It is one or more.

【0013】特に、請求項1から請求項3において請求
項5に記載のように、前記蒸着の速度は、0.01〜2
nm/秒であるものである。
[0013] In particular, as set forth in claim 5 in any one of claims 1 to 3, the rate of the deposition is 0.01 to 2.
nm / sec.

【0014】また、請求項6に記載のように、基板上に
陽極と陰極とで挟んだ少なくとも1層以上の有機層で構
成される少なくとも片側より光を取り出す事ができる有
機電界発光素子であって、前記有機層はホスト材料とゲ
スト材料とを混合比率が重量比500:1以上の関係に
ある有機蛍光体材料を抵抗加熱法により数nm/秒の速度
で前記基板に蒸着させて形成する発光層を有するもので
ある。
According to a sixth aspect of the present invention, there is provided an organic electroluminescent device capable of extracting light from at least one side composed of at least one organic layer sandwiched between an anode and a cathode on a substrate. The organic layer is formed by depositing an organic phosphor material having a mixing ratio of a host material and a guest material in a weight ratio of 500: 1 or more on the substrate by a resistance heating method at a speed of several nm / sec. It has a light emitting layer.

【0015】これにより、安定した特性が得られるOL
EDを容易に形成することができる。
[0015] Thus, an OL which can obtain stable characteristics.
The ED can be easily formed.

【0016】[0016]

【発明の実施の形態】本発明を、添付図面に示した実施
の形態に基づき説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described based on embodiments shown in the accompanying drawings.

【0017】本実施の形態の構成は、図1で示すよう
に、透光性ガラスから成る基板10の上面にITOの半透
明被膜から成る膜厚100[nm]の陽極11を形成し、この
上に銅フタロシアニン(CuPc)から成る膜厚20[nm]の正
孔注入層12、N,N'−ビス(3−メチルフェニル)−N,
N'−ジフェニル−[1,1'−ビフェニル]−4,4'−ジアミン
(TPD)から成る膜厚70[nm]の正孔輸送層13、後述す
る膜厚70[nm]の発光層14、及びAlから成る膜厚150[n
m]の陰極15を順次積層形成して成り、陽極11と陰極
15との間に数ボルト〜数十ボルトの直流電源16を接
続するものである。
In this embodiment, as shown in FIG. 1, an anode 11 having a thickness of 100 [nm] made of a translucent ITO film is formed on an upper surface of a substrate 10 made of a transparent glass. A 20 [nm] -thick hole injection layer 12 made of copper phthalocyanine (CuPc), N, N'-bis (3-methylphenyl) -N,
A hole transport layer 13 having a thickness of 70 [nm] made of N'-diphenyl- [1,1'-biphenyl] -4,4'-diamine (TPD), and a light emitting layer 14 having a thickness of 70 [nm] to be described later. , And a film thickness of 150 [n
m] are successively formed, and a DC power supply 16 of several volts to several tens of volts is connected between the anode 11 and the cathode 15.

【0018】発光層14は、ホスト材料とゲスト材料と
から構成され、発光特性や温度特性などの所望の特性を
得るために適宜好ましい材料が必要量用いられるが、前
記ホスト材料と前記ゲスト材料との混合比が大きい、例
えば100:1以上の場合に本発明は適しており、以下
に斯かる構成のOLEDの製造方法について説明する。
The light emitting layer 14 is composed of a host material and a guest material. A suitable amount of a suitable material is used to obtain desired characteristics such as light emission characteristics and temperature characteristics. The present invention is suitable for the case where the mixing ratio is large, for example, 100: 1 or more, and a method for manufacturing an OLED having such a configuration will be described below.

【0019】本実施の形態の製造装置は、図2で示すよ
うな蒸着装置から構成されており、20は真空槽であっ
て、この中に複数の蒸着用の坩堝21と膜厚モニタ用水
晶振動子22を有し、OLEDのベースとなる基板10
を真空槽20内の坩堝21の上方にセットする。この基
板10は、陽極11が塗布等により形成された後、表面
活性剤で超音波洗浄処理され、脱イオン化水で洗浄さ
れ、トルエン蒸気で脱脂され、強酸化剤で表面処理さ
れ、陽極11が坩堝21と対向する状態で真空槽20内
にセットされる。
The manufacturing apparatus of the present embodiment is constituted by a vapor deposition apparatus as shown in FIG. 2. Numeral 20 denotes a vacuum chamber, in which a plurality of crucibles 21 for vapor deposition and a quartz crystal for film thickness monitoring are provided. Substrate 10 having vibrator 22 and serving as OLED base
Is set above the crucible 21 in the vacuum chamber 20. After the anode 11 is formed by coating or the like, the substrate 10 is subjected to ultrasonic cleaning with a surfactant, washed with deionized water, degreased with toluene vapor, surface-treated with a strong oxidizing agent, and It is set in the vacuum chamber 20 so as to face the crucible 21.

【0020】そして、電極用アルミボード23で坩堝2
1を加熱することにより、陽極11の上面(図2では図
面の下方)に前記有機層及び陰極15を順次積層形成す
るため、坩堝21と基板10との間に位置するマスク2
4やシャッター25をマイクロコンピュータ(マイコ
ン)26により制御する構成となっている。
Then, the crucible 2 is formed by the aluminum board 23 for electrodes.
1 is heated to form a stack of the organic layer and the cathode 15 on the upper surface of the anode 11 (below the drawing in FIG. 2), so that the mask 2 positioned between the crucible 21 and the substrate 10 is formed.
4 and a shutter 25 are controlled by a microcomputer (microcomputer) 26.

【0021】すなわち、マイコン26は、膜厚計27を
介して水晶振動子22からの膜厚データや8チャンネル
A/Dコンバータ28を介して坩堝21にセットした熱
電対(図示しない)からの温度データを得て、8ビット
3ポートPPI制御回路29を介して坩堝21の切り替え
とマスク24やシャッター25の制御を行うと共に、2
チャンネルD/Aコンバータ30を介してアルミボード
23を制御する。
That is, the microcomputer 26 calculates the film thickness data from the crystal oscillator 22 via the film thickness meter 27 and the temperature from the thermocouple (not shown) set in the crucible 21 via the 8-channel A / D converter 28. After obtaining the data, switching of the crucible 21 and control of the mask 24 and the shutter 25 via the 8-bit 3-port PPI control circuit 29 are performed, and
The aluminum board 23 is controlled via the channel D / A converter 30.

【0022】これにより、真空槽20内の高真空下(〜
2×10↑−↑5[Torr])において、全ての前記有機層
と陰極15を連続蒸着することができる。
Thus, under high vacuum in the vacuum chamber 20 (~
(2 × 10 ↑ −5 [Torr]), all the organic layers and the cathode 15 can be continuously deposited.

【0023】また、基板10をガラス等の透光性基板と
することにより、この基板10を通して発光層14から
の発光を外部へ照射する、すなわち、少なくとも片側よ
り光を取り出す事ができるOLEDとなり、一方、陰極
15を透光性とすることにより、これらバッファ層15
や陰極16を通して発光層14からの発光を外部へ照射
する、すなわち、少なくとも片側より光を取り出す事が
できるOLEDとなり、以上を組み合わせて用いること
も可能である。更に、基板10をシリコン等の非透光性
基板としてこの上に陰極15、発光層14、陽極11
(必要に応じて発光層14と陽極11との間に正孔輸送
層13、及び/又は、正孔注入層12、あるいは、これ
らを一体化した層を介在させても良い)をこの順番で積
層形成することにより、基板10の反対側である陽極1
1を通して発光層14からの発光を外部へ照射する、す
なわち、少なくとも片側より光を取り出す事ができるO
LEDとなる。
Further, by forming the substrate 10 as a light-transmitting substrate such as glass, an OLED that emits light emitted from the light emitting layer 14 to the outside through the substrate 10, that is, an OLED that can extract light from at least one side, On the other hand, by making the cathode 15 translucent, these buffer layers 15
The OLED emits light emitted from the light emitting layer 14 to the outside through the cathode 16 or the cathode 16, that is, an OLED capable of extracting light from at least one side, and may be used in combination. Further, the substrate 10 is a non-translucent substrate such as silicon or the like, and a cathode 15, a light emitting layer 14, and an anode 11 are formed thereon.
(If necessary, a hole transport layer 13 and / or a hole injection layer 12 or a layer obtained by integrating them may be interposed between the light emitting layer 14 and the anode 11). The anode 1 on the opposite side of the substrate 10 is formed by lamination.
1 emits light from the light emitting layer 14 to the outside, that is, O which can take out light from at least one side.
It becomes an LED.

【0024】次に、発光層14の形成方法について説明
すると、発光層14は、ホスト材料とゲスト材料とから
構成されるもので、白色の発光を得る場合には、出光興
産製の商品名「IDE120」から成るホスト材料に出光興産
製の商品名「IDE103」から成るゲスト材料を混合比率が
重量比500:1に計量し、均一となるように乳鉢で混
合して有機蛍光体材料を作った後、これを坩堝21にセ
ットして前記抵抗加熱法により数nm/秒の蒸着速度によ
り基板10に蒸着させる。
Next, a method for forming the light emitting layer 14 will be described. The light emitting layer 14 is composed of a host material and a guest material. An organic phosphor material was prepared by weighing a guest material consisting of Idemitsu Kosan's trade name "IDE103" to a host material consisting of IDE120 "at a mixing ratio of 500: 1, and mixing it in a mortar so as to be uniform. Thereafter, this is set in the crucible 21 and vapor-deposited on the substrate 10 by the resistance heating method at a vapor deposition rate of several nm / sec.

【0025】この際、前記有機蛍光体材料の均一化を確
かめるために、混合した前記有機蛍光体材料へブラック
ライトを照射して、均一な発光が得られるか否かで判断
することが望ましい。
At this time, in order to confirm the uniformity of the organic phosphor material, it is desirable to irradiate the mixed organic phosphor material with black light to determine whether uniform light emission is obtained.

【0026】このように、蒸着前に前記ホスト材料と前
記ゲスト材料とを混合して前記有機蛍光体材料を得た後
に蒸着させることにより、前記ホスト材料に比べて微量
な前記ゲスト材料は前記ホスト材料に引きずられる形で
前記ホスト材料と一緒に蒸着することになり、同一の坩
堝21による一回の作業で前記ホスト材料と前記ゲスト
材料とを同時に蒸着させて発光層14を形成することが
できる。
As described above, by mixing the host material and the guest material before the vapor deposition to obtain the organic phosphor material and then performing the vapor deposition, the amount of the guest material, which is smaller than the host material, can be reduced. The light emitting layer 14 can be formed by simultaneously depositing the host material and the guest material by a single operation using the same crucible 21 because the material is deposited together with the host material in a form dragged by the material. .

【0027】これにより、前記有機蛍光体材料を作成す
る時点における前記ホスト材料と前記ゲスト材料との混
合比率に応じて所定のドーパント量を含んだ発光層14
を再現性良く得ることができ、特に混合比率が重量比1
000:1以上の微量ドーパント制御による発光層14
の形成に大きな効果を有し、しかも作業工程を簡素化で
きる。
Thus, the light emitting layer 14 containing a predetermined amount of dopant according to the mixing ratio of the host material and the guest material at the time of preparing the organic phosphor material.
Can be obtained with good reproducibility, especially when the mixing ratio is 1 by weight.
Emitting layer 14 by controlling a trace amount of 000: 1 or more dopant
This has a great effect on the formation of the structure, and further simplifies the working process.

【0028】発光層14の形成には、抵抗加熱法の他に
も真空蒸着法等によっても可能である。
The light emitting layer 14 can be formed by a vacuum evaporation method or the like in addition to the resistance heating method.

【0029】なお、前記方法による発光層14の形成に
おいては、前記混合比率がおよそ重量比100:1以上
でないと、前記ホスト材料と前記ゲスト材料とを同時に
蒸着させることが困難となって使用できない。
In the formation of the light emitting layer 14 by the above method, it is difficult to simultaneously deposit the host material and the guest material unless the mixing ratio is about 100: 1 or more. .

【0030】また、発光層14の蒸着の速度は、できる
だけ低い(遅い)レート数が望ましく、0.01〜2nm
/秒が最適である。
The rate of vapor deposition of the light emitting layer 14 is desirably as low (slow) as possible, for example, 0.01 to 2 nm.
/ Sec is optimal.

【0031】[0031]

【発明の効果】この発明は、容易に形成でき、安定した
特性が得られるOLEDを提供することができる。
According to the present invention, an OLED which can be easily formed and has stable characteristics can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施の形態の構成を説明する模式断
面図。
FIG. 1 is a schematic cross-sectional view illustrating a configuration of an embodiment of the present invention.

【図2】 同上の製造装置を説明する模式断面図。FIG. 2 is a schematic cross-sectional view illustrating the manufacturing apparatus of the above.

【符号の説明】[Explanation of symbols]

10 基板 11 陽極 12 正孔注入層(有機層) 13 正孔輸送層(有機層) 14 発光層(有機層) 15 陰極 16 電源 Reference Signs List 10 substrate 11 anode 12 hole injection layer (organic layer) 13 hole transport layer (organic layer) 14 light emitting layer (organic layer) 15 cathode 16 power supply

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 基板上に陽極と陰極とで挟んだ少なくと
も1層以上の有機層で構成される少なくとも片側より光
を取り出す事ができる有機電界発光素子であって、前記
有機層はホスト材料とゲスト材料とが微量ドーパントの
関係にある有機蛍光体材料を前記基板に蒸着させて形成
する発光層を有することを特徴とする有機電界発光素
子。
1. An organic electroluminescent device comprising at least one organic layer sandwiched between an anode and a cathode on a substrate and capable of extracting light from at least one side, wherein the organic layer comprises a host material. An organic electroluminescent device, comprising: a light emitting layer formed by depositing an organic phosphor material having a relation of a trace dopant with a guest material on the substrate.
【請求項2】 基板上に陽極と陰極とで挟んだ少なくと
も1層以上の有機層で構成される少なくとも片側より光
を取り出す事ができる有機電界発光素子であって、前記
有機層はホスト材料とゲスト材料と微量ドーパントの関
係にある有機蛍光体材料を抵抗加熱法により前記基板に
蒸着させて形成する発光層を有することを特徴とする有
機電界発光素子。
2. An organic electroluminescent device capable of extracting light from at least one side composed of at least one organic layer sandwiched between an anode and a cathode on a substrate, wherein the organic layer comprises a host material and An organic electroluminescent device comprising a light emitting layer formed by depositing an organic phosphor material having a relationship between a guest material and a trace dopant on the substrate by a resistance heating method.
【請求項3】 基板上に陽極と陰極とで挟んだ少なくと
も1層以上の有機層で構成される少なくとも片側より光
を取り出す事ができる有機電界発光素子であって、前記
有機層はホスト材料とゲスト材料と微量ドーパントの関
係にある有機蛍光体材料を真空蒸着法により前記基板に
蒸着させて形成する発光層を有することを特徴とする有
機電界発光素子。
3. An organic electroluminescent device capable of extracting light from at least one side composed of at least one organic layer sandwiched between an anode and a cathode on a substrate, wherein the organic layer is formed of a host material. An organic electroluminescent device comprising a light emitting layer formed by depositing an organic phosphor material having a relationship with a guest material and a trace amount of dopant on the substrate by a vacuum deposition method.
【請求項4】 前記微量ドーパントは、前記ホスト材料
と前記ゲスト材料との混合比率が重量比100:1以上
であることを特徴とする請求項1から請求項3の何れか
に記載の有機電界発光素子。
4. The organic electric field according to claim 1, wherein the mixing ratio of the host material and the guest material in the trace dopant is 100: 1 or more by weight. Light emitting element.
【請求項5】 前記蒸着の速度は、0.01〜2nm/秒
であることを特徴とする請求項1から請求項3の何れか
に記載の有機電界発光素子。
5. The organic electroluminescent device according to claim 1, wherein the deposition rate is 0.01 to 2 nm / sec.
【請求項6】 基板上に陽極と陰極とで挟んだ少なくと
も1層以上の有機層で構成される少なくとも片側より光
を取り出す事ができる有機電界発光素子であって、前記
有機層はホスト材料とゲスト材料とを混合比率が重量比
500:1以上の関係にある有機蛍光体材料を抵抗加熱
法により数nm/秒の速度で前記基板に蒸着させて形成す
る発光層を有することを特徴とする有機電界発光素子。
6. An organic electroluminescent device capable of extracting light from at least one side composed of at least one organic layer sandwiched between an anode and a cathode on a substrate, wherein the organic layer comprises a host material. A light emitting layer formed by depositing an organic phosphor material having a mixing ratio of 500: 1 or more with a guest material on the substrate by a resistance heating method at a speed of several nm / sec. Organic electroluminescent device.
JP2001125367A 2001-04-24 2001-04-24 Organic electroluminescent element Pending JP2002324669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001125367A JP2002324669A (en) 2001-04-24 2001-04-24 Organic electroluminescent element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001125367A JP2002324669A (en) 2001-04-24 2001-04-24 Organic electroluminescent element

Publications (1)

Publication Number Publication Date
JP2002324669A true JP2002324669A (en) 2002-11-08

Family

ID=18974599

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2002324669A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084613A (en) * 2007-04-27 2013-05-09 Semiconductor Energy Lab Co Ltd Light-emitting device fabrication method
WO2023063163A1 (en) * 2021-10-14 2023-04-20 出光興産株式会社 Mixed powder for organic electroluminescent element, production method therefor, method for manufacturing organic electroluminescent element using said mixed powder, method for selecting compound in said mixed powder, and composition for vacuum deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084613A (en) * 2007-04-27 2013-05-09 Semiconductor Energy Lab Co Ltd Light-emitting device fabrication method
WO2023063163A1 (en) * 2021-10-14 2023-04-20 出光興産株式会社 Mixed powder for organic electroluminescent element, production method therefor, method for manufacturing organic electroluminescent element using said mixed powder, method for selecting compound in said mixed powder, and composition for vacuum deposition

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