JP2002319659A - Pressure-welding type semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a pressure-welding type semiconductor device, capable of improving thermal resistance characteristics and heat cycle characteristics, and to provide a method for manufacturing the same. SOLUTION: The pressure-welding type semiconductor device is built, by interposing a semiconductor chip 3 between a first main electrode 1 and a second main electrode 5 and pressure welding therebetween, a first sintered metal plate 2 is arranged between the first electrode 1 and the chip 3, and a second sintered metal plate 4 is arranged between the second electrode 5 and the chip 3. The surface of the plate 4 at least at the chip 3 side is formed into a machined surface 4A, and the height of the surface is regulated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure contact type semiconductor device and a method of manufacturing the same, and more particularly to a pressure contact type semiconductor device in which a semiconductor chip is pressed by a main electrode with a sintered metal plate interposed therebetween and a method of manufacturing the same.

[0002]

2. Description of the Related Art As shown in FIG. 21, in a press-contact type semiconductor device, a semiconductor chip 102 is sandwiched between a lower collector main electrode 100 and an upper emitter main electrode 104, and this collector main electrode 100 and the emitter main electrode 104 are separated from each other. The semiconductor chip 102 is brought into pressure contact with the electrode 104. By this pressure contact, the collector main electrode 100 and the semiconductor chip 10
2 and between the emitter main electrode 104 and the semiconductor chip. The semiconductor chip 102 is formed by a silicon (Si) chip, and is, for example, a GTO element, an IGBT element, or the like having a large current capacity. As the collector main electrode 100 and the emitter main electrode 104, copper (Cu) electrodes having at least excellent electrical conductivity and excellent thermal conductivity are used.

In this type of press contact type semiconductor device, molybdenum (M
o) A sintered metal plate 101 such as a plate or a tungsten (W) plate is provided between the collector main electrode 100 and the semiconductor chip 102. Similarly, a sintered metal plate 103 is provided between the emitter main electrode 104 and the semiconductor chip 102. The collector main electrode 100 and the sintered metal plate 101 are in a non-bonded state, and the emitter main electrode 104 and the sintered metal plate 103 are also in a non-bonded state.

The press-contact type semiconductor device shown in FIG. 21 employs a multi-chip structure, and has a plurality of semiconductor chips 10.
2 are pressed at the same time, and the plurality of semiconductor chips 102 are electrically connected in parallel. The sintered metal plate 101 between the collector main electrode 100 and the semiconductor chip 102 is provided as a sintered metal plate (large metal plate) common to the plurality of semiconductor chips 102, and has a planar size of the collector main electrode 100. They are formed with substantially the same plane size. The sintered metal plates 103 between the emitter main electrode 104 and the semiconductor chip 102 are individually arranged on the plurality of semiconductor chips 102 as the same number of sintered metal plates (small metal plates). Size or emitter main electrode 104
Are formed to have substantially the same size as the planar size of the protruding connection portion.

[0005]

In the press-contact type semiconductor device employing the above-mentioned multi-chip structure, no consideration has been given to the following points.

(1) The sintered metal plates 101 and 103, especially the sintered metal plate 103 individually provided for each of the plurality of semiconductor chips 102, sinter powder of a high melting point metal, that is, a high melting point below the melting point. Since it is manufactured by pressure molding at a temperature, the thickness varies. This variation in the thickness of the sintered metal plate 103 appears as variation in the pressing force of the semiconductor chip 102. Since a part of the thermal resistance is a contact thermal resistance between members constituting the press-contact type semiconductor device, the thermal resistance value changes depending on the press-contact force. The current flowing in each of the plurality of semiconductor chips 102 between the collector main electrode 100 and the emitter main electrode 104 is affected by the thermal resistance, and the temperature of the semiconductor chip 102 with poor heat dissipation rises. Semiconductor chip 102
And the current concentration tends to increase. As described above, in the press-contact type semiconductor device, it is very difficult to uniformly supply current to each of the plurality of semiconductor chips 102 due to the variation in the thickness of the sintered metal plate 103.

(2) In order to absorb variations in the thickness of the sintered metal plate 103 as described above, the emitter main electrode 1
Reference numeral 04 includes a columnar connection portion protruding for each semiconductor chip 102. That is, the emitter main electrode 104
In the range of the thickness of the entire apparatus, a variation in the thickness of the sintered metal plate 103 can be absorbed by plastic deformation by a load (pressing force) applied from the press-contact stack. However, the emitter main electrode 104
Is divided into a plurality of semiconductor chips 102 and the cross-sectional area thereof is reduced, so that the thermal resistance is increased. Further, the emitter main electrode 104 needs to secure an extra amount of plastic deformation necessary for absorbing the thickness variation of the sintered metal plate 103 in advance. Increases the thermal resistance.

The present invention has been made to solve the above problems. Accordingly, an object of the present invention is to provide a press-contact type semiconductor device capable of improving the thermal resistance characteristics and the thermal cycle characteristics.

It is a further object of the present invention to provide a method of manufacturing a press-contact type semiconductor device which can achieve the above object.

[0010]

Means for Solving the Problems In order to solve the above problems, a first feature of the present invention is that a main electrode and a sintered metal plate disposed on the main electrode and having higher rigidity than the main electrode. And a semiconductor chip on a sintered metal plate, wherein the surface of the sintered metal plate on the semiconductor chip side is a machined surface whose height is adjusted to be a press-contact type semiconductor device. Here, the “semiconductor chip” is used to mean a chip-shaped Si substrate, a compound semiconductor substrate, or the like. This "semiconductor chip"
Is preferably a semiconductor element for high withstand voltage and large current capacity, such as IGBT, MOSFET, static induction transistor (SIT), bipolar transistor (BJT), static induction thyristor (SI thyristor), and GTO thyristor. It is. In the press-contact type semiconductor device according to the first aspect of the present invention, the number of “semiconductor chips” includes one or more. The “main electrode” is used to mean an electrode for supplying a main current to a main electrode terminal of a semiconductor chip. For example, IGB
If T is used, the "main electrode" is the collector or emitter electrode. In the case of a pressure contact type semiconductor device adopting a multi-chip structure, the “main electrode” may be formed in a projecting shape (pillar shape) for each of a plurality of semiconductor chips, or may be a plate common to a plurality of semiconductor chips. It may be formed in a shape. For the “main electrode”, Cu, Cu alloy excellent in electric conductivity and heat conductivity, or Cu, Cu alloy having a plating layer on the surface thereof for preventing oxidation can be practically used. The term “sintered metal plate” is used to mean, for example, a metal plate formed by sintering (pressing) a metal powder at a high temperature equal to or lower than the melting point. The “sintered metal plate” basically has electrical conductivity, has a linear expansion coefficient between the linear expansion coefficient of the semiconductor chip and the linear expansion coefficient of the main electrode, and has a linear expansion coefficient between the semiconductor chip and the main electrode. It is preferable to have at least a function of alleviating the stress generated by the thermal cycle (temperature cycle). "Sintered metal plate"
A high melting point metal plate, specifically, a Mo plate, a W plate, or a metal plate similar thereto can be practically used. "Sintered metal plate" means "small sintered metal plate" for each of a plurality of semiconductor chips in the case of a pressure-contact type semiconductor device that adopts a multi-chip structure.
Or a single “large sintered metal plate” common to a plurality of semiconductor chips. The term “surface of the sintered metal plate” is used to mean the surface of the sintered metal plate that faces the semiconductor chip and is in electrical contact with the main electrode terminal of the semiconductor chip by pressure welding. The “machined surface” is a surface that has been machined so that at least the mounting position (mounting height) of the semiconductor chip is fixed in order to correct manufacturing variations in the thickness of the sintered metal plate. Used in a meaning. The “machined surface” includes at least a ground surface, a polished surface, and the like.

In the press-contact type semiconductor device according to the first aspect of the present invention, the surface of the sintered metal plate is machined so as to eliminate the variation in the thickness of the sintered metal plate. In addition, the amount of variation in the thickness of the sintered metal plate absorbed by the plastic deformation of the main electrode can be reduced. Therefore, since the thickness of the main electrode itself can be reduced, the thermal resistance can be reduced in accordance with the reduction in the thickness of the main electrode.

A second feature of the present invention resides in that the press-contact type semiconductor device according to the first feature of the present invention is provided with a second sintered metal plate on a semiconductor chip and a second sintered metal plate on a second sintered metal plate. And a second main electrode having a lower rigidity than the second sintered metal plate, wherein the surface of the second sintered metal plate on the semiconductor chip side is:
This is a pressure-contact type semiconductor device having a machined surface whose height is adjusted. Here, the definition of terms such as the “semiconductor chip” of the press-contact type semiconductor device according to the second feature of the present invention and the subsequent features is “the semiconductor chip” of the press-contact type semiconductor device according to the first feature of the present invention. "And the like.

In the press-contact type semiconductor device according to the second aspect of the present invention, the surfaces of the first and second sintered metal plates are machined. The variation in the thickness of the metal plate can be reduced by the plastic deformation of the first main electrode, and the variation in the thickness of the second sintered metal plate can be reduced by the plastic deformation of the second main electrode. The amount absorbed can be reduced. Therefore, since the thickness of the first and second main electrodes themselves can be reduced, the thermal resistance can be reduced in accordance with the decrease in the thickness of the first and second main electrodes.

A third feature of the present invention is that a main electrode, a sintered metal plate disposed on the main electrode and having higher rigidity than the main electrode, and a plurality of semiconductor chips on the sintered metal plate are provided. Wherein the surface of the sintered metal plate on the semiconductor chip side is at least 5 μm in each mounting area of at least a plurality of semiconductor chips.
This is a press-contact type semiconductor device set within the following undulation range. Here, "at least the mounting area of each of the plurality of semiconductor chips" is used at least as a region where each of the plurality of semiconductor chips is mounted, and other areas as necessary, for example, It is used in the expression that the entire surface of the sintered metal plate may be included. “Within the range of undulation of 5 μm or less” means that the height of each surface of the sintered metal plate on which each of the plurality of semiconductor chips is mounted is substantially the same as long as there is no practical problem. Used in a meaning.

In the press-contact type semiconductor device according to the third aspect of the present invention, the surface of the sintered metal plate is set within a range of undulation of 5 μm or less.
The amount of variation in the thickness of the sintered metal plate absorbed by plastic deformation of the main electrode can be reduced. Therefore, since the thickness of the main electrode itself can be reduced, the thermal resistance can be reduced in accordance with the reduction in the thickness of the main electrode.

A fourth feature of the present invention is that a main electrode, a sintered metal plate disposed on the main electrode and having a plane larger than a connection surface of the main electrode, and a semiconductor chip on the sintered metal plate And a pressure-contact type semiconductor device having: Here, the term "main electrode connection surface" is used to mean the surface of the main electrode that is at least electrically connected to the sintered metal plate, and the main electrode and the sintered metal plate are in mechanical contact. When it is described, it is used as an expression including any of the cases where it is joined. "Sintered metal plate having a large flat surface" is a shape that does not apply a local excessive pressing force at the periphery of the sintered metal plate when the sintered metal plate is pressed uniformly by the main electrode. It is used to mean a sintered metal plate formed by the size and the size.

In the pressure-contact type semiconductor device according to the fourth aspect of the present invention, the sintered metal plate having a larger plane than the connection surface of the main electrode is provided. In this case, it is possible to prevent a local excessive pressing force from being applied to the sintered metal plate and to make the pressing force applied to the sintered metal plate uniform, thereby reducing the thermal resistance.

According to a fifth feature of the present invention, there is provided a main electrode, a sintered metal plate disposed on the main electrode and having a higher rigidity than the main electrode, and a semiconductor chip on the sintered metal plate. A press-contact type semiconductor device further includes a groove provided in the main electrode in a region coinciding with the contour of the sintered metal plate or in an outer peripheral region near the contour. Here, the “groove” is used to mean a continuous body of recesses dug down in the thickness direction of the main electrode from the surface of the main electrode on the sintered metal plate side. This "groove" is formed so that a local and excessive pressing force is not applied to the sintered metal plate at the peripheral edge of the sintered metal plate, similarly to the press-contact type semiconductor device according to the fourth aspect of the present invention. Has become. The “groove” may be provided on all the perimeters that match the contour of the sintered metal plate, or may be provided intermittently on all the perimeters.

In the press-contact type semiconductor device according to the fifth aspect of the present invention, the groove is formed in a region coinciding with the contour of the sintered metal plate of the main electrode or an outer peripheral region near the contour. By providing the sintered metal plate, it is possible to prevent local and excessive pressing force from being applied to the sintered metal plate, and it is possible to make the pressing force applied to the sintered metal plate uniform, thereby reducing thermal resistance. Can be.

A sixth feature of the present invention is that a first main electrode,
A first sintered metal plate provided on the first main electrode and having a higher rigidity than the first main electrode; a semiconductor chip on the first sintered metal plate; And a sintered metal plate of
A second main electrode disposed on the second sintered metal plate and having a flat connection surface as compared with the second sintered metal plate, wherein the second main electrode has a contour line of the first sintered metal plate; A press-contact type semiconductor device is further provided with a groove provided in the first main electrode in a matching region or an outer peripheral region near the contour line. Here, the definition of terms such as “connection surface of main electrode” is the same as the definition of terms such as “connection surface of main electrode” of the press-contact type semiconductor device according to the fourth feature of the present invention. Further, the definition of terms such as "groove" is the same as the definition of terms such as "groove" of the press-contact type semiconductor device according to the fifth aspect of the present invention.

In the press-contact type semiconductor device according to the sixth aspect of the present invention thus constituted, the effect obtained by the press-contact type semiconductor device according to the fourth aspect of the present invention and the fifth aspect of the present invention are described. An effect obtained by combining the effect obtained by the press-contact type semiconductor device according to the feature can be obtained.

A seventh feature of the present invention is that a first main electrode having a concave portion on the surface, a first sintered metal plate provided in the concave portion on the first main electrode, A semiconductor chip on the sintered metal plate, a second sintered metal plate on the semiconductor chip, and a flat surface which is disposed on the second sintered metal plate and is smaller than the second sintered metal plate. And a pressure contact type semiconductor device including a second main electrode. Here, the “recess” means the first main electrode from the surface on the first sintered metal plate side to the first main electrode.
Means a “dent” dug down in the thickness direction of the main electrode, and is used to reduce the effective thickness of the first main electrode. The term “reducing the effective thickness” has the same meaning as shortening the effective electric conduction path length and the heat conduction path length of the first main electrode.

In the press-contact type semiconductor device according to the seventh aspect of the present invention configured as described above, in addition to the effects obtained by the press-contact type semiconductor device according to the fourth aspect of the present invention, the first main feature is as follows. Since the electrode has the concave portion, the effective thickness of the first main electrode can be reduced, and the thermal resistance of the first main electrode can be reduced.

An eighth feature of the present invention is that a first main electrode having a concave portion on the surface, a first sintered metal plate provided in the concave portion on the first main electrode, A second sintered metal plate on the semiconductor chip, a second sintered metal plate on the semiconductor chip, and a lower rigidity than the second sintered metal plate. A pressure welding comprising a second main electrode, and further comprising a groove provided in the second main electrode in a region coinciding with the contour of the second sintered metal plate or in an outer peripheral region near the contour. This is a type semiconductor device.

In the press-contact type semiconductor device according to the eighth aspect of the present invention, the effect obtained by the press-contact type semiconductor device according to the fifth aspect of the present invention and the effect of the seventh aspect of the present invention are obtained. An effect obtained by combining the effect obtained by the press-contact type semiconductor device according to the feature can be obtained.

A ninth feature of the present invention is a region or a contour that matches the contour of the first sintered metal plate of the press-contact type semiconductor device according to the seventh feature of the present invention or the eighth feature of the present invention. A press-contact type semiconductor device is further provided with a groove in the concave portion of the first main electrode in an outer peripheral region near the line.

In the press-contact type semiconductor device according to the ninth aspect of the present invention, the effect obtained by the press-contact type semiconductor device according to the fifth aspect of the present invention and the seventh aspect of the present invention are described. An effect can be obtained in combination with the feature or the effect obtained by the press-contact type semiconductor device according to the eighth feature of the present invention.

A tenth feature of the present invention is a sintered metal plate for a press-contact type semiconductor device according to any one of the first feature of the present invention, the third feature of the present invention to the fifth feature of the present invention, Alternatively, between the first sintered metal plate and the semiconductor chip according to any of the second feature of the present invention, the sixth feature to the ninth feature of the present invention, or between the semiconductor chip and the present invention. An intermediate metal body for reducing frictional resistance between the second sintered metal plate and the second sintered metal plate according to any of the second characteristic, the sixth characteristic of the present invention to the ninth characteristic of the present invention. A press-contact type semiconductor device further provided. Here, the “intermediate metal body” basically has conductivity, and is a connection surface between the semiconductor chip and the sintered metal plate, the first sintered metal plate, or the second sintered metal plate. Is used to mean a metal body disposed in the middle that can reduce the frictional resistance of the metal. Further, the “intermediate metal body” is used to reduce the pressing force applied to the semiconductor chip at the end of the connection surface of the sintered metal plate, the first sintered metal plate, or the second sintered metal plate. It is preferable that the semiconductor chip be formed with a larger area than the connection area between the first sintered metal plate or the second sintered metal plate and the semiconductor chip. As the “intermediate metal body”, a hard metal foil such as a Ni foil, a Cu foil whose surface is plated with a hard metal such as Ni, or the like can be practically used. Further, as the “intermediate metal body”, an Ag foil, a Cu foil having a surface plated with Ag, or the like can be used. This A
In the case where the intermediate metal body is formed of a g-foil or a Cu foil having a surface plated with Ag, the fretting wear of Al used as a main electrode terminal material of a semiconductor chip can be reduced, and a sintered metal can be formed. The pressing force applied to the semiconductor chip at the end of the connection surface of the plate, the first sintered metal plate or the second sintered metal plate can be reduced.

In the press-contact type semiconductor device according to the tenth aspect of the present invention having the above structure, since the intermediate metal member is provided, the sintered metal plate, the first sintered metal plate or the second sintered metal plate is provided. Since the frictional resistance of the connection surface between the binding metal plate and the semiconductor chip can be reduced, the thermal cycle characteristics can be improved.

An eleventh feature of the present invention is a sintered metal plate, a first sintered metal plate of a press-contact type semiconductor device according to any one of the first to tenth features of the present invention, A pressure-contact type semiconductor device in which at least one of the end and the corner of the second sintered metal plate is rounded. Here, "the sintered metal plate, the first sintered metal plate or the second
The term “at least one of the ends and corners of the sintered metal plate” is used to mean at least the ends and corners of the sintered metal plate on the semiconductor chip side. “R chamfering” is used to mean a curved chamfer applied to an end and a corner at a predetermined radius of curvature (r).
The "predetermined radius of curvature" of this round chamfering means that the pressure contact force applied to the end of the connection surface of the sintered metal plate, the first sintered metal plate or the second sintered metal plate and the semiconductor chip at the corners is reduced. Therefore, the radius of curvature required for the purpose is used, and the radius of curvature can be practically used within the range of 0.1 mm to 1.0 mm.

In the press-contact type semiconductor device according to the eleventh feature of the present invention thus configured, in addition to the effects obtained by the press-contact-type semiconductor devices according to the first to tenth features of the present invention, Further, since the rounded chamfering is provided, the pressing force applied to the semiconductor chip at the connection end and the corner of the sintered metal plate, the first sintered metal plate or the second sintered metal plate can be reduced. In addition, heat cycle characteristics can be improved.

According to a twelfth feature of the present invention, there is provided a press-fit semiconductor device according to any one of the first to eleventh features of the present invention, wherein the first electrode is disposed between the main electrode and the sintered metal plate. Is a press-contact type semiconductor device in which the main electrode and the first sintered metal plate or the second main electrode and the second sintered metal plate are joined. Here, “joining” is a term that is distinguished from simply “contacting” and is used in the sense of being electrically and mechanically connected, more specifically, being metallurgically connected. You. For the “joining”, a joining brazing material such as an Ag / Cu eutectic brazing material can be practically used.

In the press-contact type semiconductor device according to the twelfth feature of the present invention, the first main electrode and the first sintered metal plate are connected between the main electrode and the sintered metal plate. During
Alternatively, since the second main electrode and the second sintered metal plate are physically joined, the thermal resistance of both joints can be reduced.

The thirteenth feature of the present invention is the twelfth feature of the present invention.
At least the main electrode side on the sintered metal plate, at least the first main electrode side on the first sintered metal plate, or at least the second sintered metal plate of the second sintered metal plate. A press-contact type semiconductor device provided with an activation metal film on the main electrode side for activating the reactivity of the brazing filler metal to the sintered metal plate. Here, as the "brazing material for joining", the same material as the "brazing material for joining" of the press-contact type semiconductor device according to the twelfth feature of the present invention can be practically used.
"Activated metal film" includes, for example, a Ni film capable of activating reactivity with a sintered metal plate such as a Mo plate, a W plate,
An activated metal film such as a Ti film can be used practically. These “activated metal films” are preferably formed by plating.

In the press-contact type semiconductor device according to the thirteenth feature of the present invention, the activated metal film is formed on the sintered metal plate, the first sintered metal plate or the second sintered metal plate. Therefore, even if a brazing filler metal is used, a sufficient bonding force can be ensured, and the first electrode between the main electrode and the sintered metal plate can be secured.
The joining force between the main electrode and the first sintered metal plate or between the second main electrode and the second sintered metal plate can be improved. Therefore, the thermal resistance can be further reduced at these joints.

The fourteenth feature of the present invention is that (1) a step of forming a sintered metal plate having a higher rigidity than the main electrode on the main electrode, and (2) a step of forming a surface of the sintered metal plate having a predetermined surface. And (3) arranging a semiconductor chip on the machined surface of the sintered metal plate. .
Here, the term “machining” includes at least grinding and polishing as in the definition of the term “machined surface” of the press-contact type semiconductor device according to the first feature of the present invention. When a plurality of sintered metal plates (small sintered metal plates) are formed on the main electrode, the surfaces of these sintered metal plates are simultaneously machined to the same predetermined height. Therefore, the height of the machined surface of all the sintered metal plates is made uniform.

In the method for manufacturing a press-contact type semiconductor device according to the fourteenth feature of the present invention, the surface of the sintered metal plate is machined in a state where the sintered metal plate is formed on the main electrode. As a result, the machined surface of the sintered metal plate can be adjusted to a predetermined height, and variations in the thickness of the sintered metal plate can be reduced.

A fifteenth feature of the present invention is as follows. (1) The first main electrode has a higher rigidity on the first main electrode than the first main electrode.
(2) a step of performing machining until the surface of the first sintered metal plate has a predetermined height, and (3) a step of forming the above-mentioned sintered metal plate on the second main electrode. Forming a second sintered metal plate having a higher rigidity than the second main electrode;
(4) a step of performing machining until the surface of the second sintered metal plate has a predetermined height; and (5) disposing a semiconductor chip between the machined surfaces of the first and second sintered metal plates. And a step of pressing the semiconductor chip by the first and second main electrodes at least.

In the method for manufacturing a press-contact type semiconductor device according to the fifteenth feature of the present invention, the first sintered metal plate is formed on the first main electrode and the first sintered metal plate is formed. Since machining was performed on the surface of the metal plate and the second sintered metal plate was similarly formed on the second main electrode, machining was performed on the surface of the second sintered metal plate. The machined surfaces of the first and second sintered metal plates can be adjusted to a predetermined height, and variations in the thickness of the first and second sintered metal plates can be reduced.

[0040]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a press-contact type semiconductor device according to the present invention; In the following drawings,
The same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimension, the ratio of the thickness of each layer, and the like are different from actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Also,
Needless to say, the drawings include portions having different dimensional relationships and ratios.

(First Embodiment) [Basic Structure of Press-Contact Semiconductor Device] As shown in FIG. 1, a first embodiment of the present invention is described.
The press-contact type semiconductor device according to the second embodiment has the second main electrode 5
And a second sintered metal plate 4 disposed on the second main electrode 5 (lower side in FIG. 1) and having greater rigidity than the second main electrode 5.
And a semiconductor chip 3 on the second sintered metal plate 4 (the lower side in FIG. 1).
The side surface is constructed as a machined surface whose height H2 has been adjusted. More specifically, the press-contact type semiconductor device is provided on the first main electrode 1 and on the first main electrode 1 (upper side in FIG. 1), and has higher rigidity than the first main electrode 1. A first sintered metal plate 2, a semiconductor chip 3 on the first sintered metal plate 2, and a second sintered metal plate 4 on the semiconductor chip 3
And a second main electrode 5 disposed on the second sintered metal plate 4 and having a lower rigidity than the second sintered metal plate 4. The surface on the chip 3 side is constructed as a machined surface 4A whose height H2 is adjusted.

In the embodiments of the present invention (first to seventeenth embodiments), the press-contact type semiconductor device employs a multi-chip structure, and includes a plurality of electrically connected parallel devices. The semiconductor chip 3 is provided. For the plurality of semiconductor chips 3, a semiconductor element for high withstand voltage and large current capacity such as a GTO element or an IGBT element can be practically used. Although the detailed structure is not shown, each of the plurality of semiconductor chips 3 is formed of a Si chip, and a collector electrode terminal (back surface electrode) is provided on the lower surface of the semiconductor chip 3 in the drawing. An emitter electrode terminal is provided on the upper surface in the figure. Collector electrode terminal,
Each of the emitter electrode terminals is, for example, an aluminum film, an aluminum alloy (Al-Si, Al-Cu, Al
—Cu—Si or the like) formed of a conductive material having excellent electrical conductivity, such as a film. The emitter electrode terminal is preferably subdivided in order to improve electron injection efficiency.

The first main electrode 1 is used as a collector main electrode, and presses the collector electrode terminal of the semiconductor chip 3 with the first sintered metal plate 2 interposed therebetween.
Is electrically connected to Although not necessarily limited to such size and shape, the first main electrode 1
Is formed, for example, in a disk shape having a uniform thickness of about 8 mm in the range of 120 mm to 150 mm in diameter and over the entire area (see the lower part of the first embodiment in FIG. 7).
The same applies hereinafter. ). For the first main electrode 1, Cu, Cu alloy having excellent electric conductivity and heat conductivity, or Cu, Cu alloy having a Ni plating film formed on its surface as an antioxidant film is practically used. can do.

The first sintered metal plate 2 is configured as a large sintered metal plate common to the plurality of semiconductor chips 3, and has at least excellent electric conductivity, excellent heat conductivity, and
Has a coefficient of thermal expansion between the main electrode 1 and the semiconductor chip 3. For example, the first sintered metal plate 2 has a diameter of 1 mm.
00 mm, disk-shaped M within the range of thickness 1 mm to 2 mm
The o-plate can be used practically. Mo plate is Mo
It is obtained by sintering the powder at a high temperature below the melting point, that is, by pressing. The first sintered metal plate 2 is electrically connected to the first main electrode 1 by contact in the first embodiment of the present invention.

The second main electrode 5 is used as an emitter main electrode, and presses the emitter electrode terminal of the semiconductor chip 3 with the second sintered metal plate 4 interposed therebetween.
Is electrically connected to The second main electrode 5 is formed, for example, in a disk shape having a diameter equivalent to that of the first main electrode 5 and having a uniform thickness of about 10 mm over the entire area (see FIG. 7). (See the upper part of the first embodiment. The same applies hereinafter.) The second main electrode 5 is preferably made of the same conductive material as the first main electrode 1.

The second sintered metal plate 4 is configured as a small sintered metal plate individually disposed on each of the plurality of semiconductor chips 3, and is basically a first sintered metal plate 2. And has the same function as that of, and is formed of the same conductive material. The second sintered metal plate 4 has, for example, 10 m on each side.
m, a rectangular Mo plate having a thickness of 1 mm to 2 mm can be practically used. The second sintered metal plate 4 is used in the first embodiment of the present invention and the following embodiments.
It is electrically, mechanically and physically connected to the second main electrode 5 by bonding.

Since the first sintered metal plate 2 is configured as a large sintered metal plate common to the plurality of semiconductor chips 3, the surface on the semiconductor chip 3 side, particularly the surface at the mounting position of the semiconductor chip 3. Have a relatively uniform height. On the other hand, since the second sintered metal plate 4 is individually manufactured corresponding to the plurality of semiconductor chips 3, the thickness varies. Therefore, as described above, the surface of the second sintered metal plate 4 on the semiconductor chip 3 side is a machined surface 4A, and the height of the second sintered metal plate 4 from the second main electrode 5 is higher. H2 is regulated. The machined surface 4A is a surface formed by mechanical polishing, grinding, or a similar processing method.

The machined surface 4A of the second sintered metal plate 4, preferably the machined surface 4A of all the second sintered metal plates 4 on which all the semiconductor chips 3 are mounted, is the first machined surface of the present invention. ± 5 μm or less, preferably ± 2 μm
It is set within the range of the swell. That is, the height H2 of the machined surface 4A of all the second sintered metal plates 4 is practically uniform and flat, and the second sintered metal plate 4
There is virtually no variation in thickness.

Further, the plane size of the second sintered metal plate 4 is formed to be slightly smaller than the plane size of the semiconductor chip 3 in the first embodiment of the present invention. At least the ends and corners of the plate 4 on the semiconductor chip 3 side are rounded (r-chamfered) 4B. The round chamfer 4B is a chamfer with a convex curved shape, unlike a sea chamfer (c-chamfer) having a 45-degree inclined surface, for example. That is, are chamfered 4B
Is designed so as not to cause stress concentration at a contact portion (press-contact portion) between the end portion and the corner portion of the second sintered metal plate 4 and the semiconductor chip 3.

The radius of curvature of the radius chamfer 4B is in the range of 0.1 mm to 1.0 mm, preferably 0.5 m in the first embodiment of the present invention and the embodiments described hereinafter.
m (the radius of curvature of the round chamfer marked in FIGS. 7 and 8 is preferably 0.5 mm). When the radius of curvature of the round chamfer 4B is 0.1 mm, the thermal resistance is 0.75 and the thermal cycle characteristics are 1.0 (the thermal resistance and the method of evaluating the thermal cycle characteristics will be described later). On the other hand, when the radius of curvature of the round chamfer 4B is reduced to 0.05 mm, the thermal resistance becomes 0.7
5. The thermal cycle characteristics are 0.8, and sufficient thermal cycle characteristics cannot be obtained. Conversely, when the radius of curvature of the round chamfer 4B is 1.0 mm, the thermal resistance is 0.8 and the thermal cycle characteristic is 1.2. On the other hand, when the radius of curvature of the round chamfer 4B is increased to 2.0 mm, the thermal resistance becomes 1.2,
The thermal cycle characteristic becomes 1.2, and the thermal resistance increases. Further, in the chamfering of the sea, the thermal resistance cannot be sufficiently reduced, and sufficient thermal cycle characteristics cannot be obtained.

Further, the rounded chamfer 4B of the second sintered metal plate 4 is also provided at the respective ends and corners of the first sintered metal plate 2 on the first main electrode 1 side and the semiconductor chip 3 side. A round chamfer 2B similar to that described above is provided.

In the press-contact type semiconductor device, the first sintered metal plate 2 and the second sintered metal plate 4 are interposed between the first main electrode 1 and the second main electrode 5. A plurality of semiconductor chips 3 are provided, and the plurality of semiconductor chips 3 are pressed by the first main electrode 1 and the second main electrode 5. Due to this pressure contact, the first main electrode 1 and the collector electrode terminal of the semiconductor chip 3 are electrically connected, and the second main electrode 5 and the emitter electrode terminal of the semiconductor chip 3 are electrically connected. It is supposed to be.

[Basic manufacturing method of pressure contact type semiconductor device]
Next, a basic method of manufacturing the above-described press-contact type semiconductor device will be described.
This will be described with reference to FIGS.

(1) First, as shown in FIG. 2, a first main electrode (collector main electrode) 1 is prepared.

(2) As shown in FIG. 3, the first main electrode 1
A first sintered metal plate 2 having higher rigidity than the first main electrode 1 is formed thereon. In this first embodiment,
Since the first main electrode 1 and the first sintered metal plate 2 are electrically connected by contact, the first sintered metal plate 2 is placed on the first main electrode 1. Only need to be placed.

(3) Second main electrode (emitter main electrode) 5
Then, as shown in FIG. 4, a second sintered metal plate 4 having a higher rigidity than the second main electrode 5 is formed on the second main electrode 5. A plurality of second sintered metal plates 4 are provided corresponding to the plurality of semiconductor chips 3, and each of the plurality of second sintered metal plates 4 is connected to the second main electrode 5 by bonding. It has become. For joining between the second main electrode 5 and the second sintered metal plate 4, for example, an Ag / Cu eutectic brazing material can be practically used.

Here, the plurality of second sintered metal plates 4 are
As described above, since the Mo powder is formed by sintering at a high temperature, the Mo powder has a thickness variation as shown in FIG. That is, each of the plurality of sintered metal plates 4 has a height h from the surface of the second main electrode 5.
1, h2 and h3.

In order to reduce the number of machining steps, a radius chamfer 4B is formed in advance at least at an end or a corner of the second sintered metal plate 4 at the time of pressure molding. In addition, it is preferable that at least an end or a corner of the first sintered metal plate 2 is previously formed with a round chamfer 2B at the time of pressure molding.

(4) As shown in FIG. 5, in the plurality of second sintered metal plates 4 having different thicknesses (heights), the surface on the side of the semiconductor chip 3 is machined to uniformly increase the height. H
Form a machined surface 4A adjusted to 2. By forming the machined surface 4A, it is possible to eliminate variations in the thickness of the plurality of second sintered metal plates 4. For machining, grinding, polishing, or similar processing can be used practically. In such machining, the machined surface 4A is easily set within a range of undulation of ± 5 μm or less. can do.

(5) As shown in FIG. 6, the semiconductor chips 3 are arranged on the machined surfaces 4A of the plurality of second sintered metal plates 4, respectively. Since the semiconductor chip 3 is brought into contact with the second sintered metal plate 4 and the first sintered metal plate 2 by pressure contact to be electrically connected and mechanically held, the second sintered metal plate 4 and the first sintered metal plate 2 are mechanically held. Alignment on the sintered metal plate 4 is simply performed.

(6) Thereafter, the first main electrode 1 is provided on the plurality of semiconductor chips 3 with the first sintered metal plate 2 interposed therebetween. Then, a load is applied between the first main electrode 1 and the second main electrode 5 by the press contact stack, and a plurality of semiconductor chips 3 disposed between both are pressed into contact with each other. The press-contact type semiconductor device according to the first example of the embodiment of the present invention as shown can be completed.

[Test Method and Test Results of Characteristic Evaluation of Pressure-Contact Semiconductor Device] Evaluation method of thermal resistance: The thermal resistance evaluation method is as follows. First, the pressure-contact semiconductor device is stacked on a pressure-contact stack together with a heat sink and an insulating plate. In this method, a rated current is applied to the chip 3 and the temperature difference between the junction temperature of the semiconductor chip 3 and the heat sink temperature is measured. The junction temperature of the semiconductor chip 3 is
By measuring the current-voltage-temperature characteristics of the above, it is estimated from the current-voltage characteristics at the time of actual measurement. In addition, the heat sink temperature is set by attaching a thermocouple to the groove on the heat sink surface,
Actual measurement is performed using this thermocouple.

FIG. 7 shows the measurement result of the thermal resistance as a relative value with the thermal resistance value of a press-contact type semiconductor device according to a first comparative example described below being “1”.

Further, a first comparative example, a second comparative example to be described later, and thirteenth to thirteenth examples of the embodiment of the present invention.
In the press-contact type semiconductor device according to Example 7, the thermal cycle characteristics were examined together with the measurement results of the thermal resistance value.

Method of evaluating thermal cycle characteristics: The method of evaluating thermal cycle characteristics is as follows. With the cooling of the heat sink stopped, pressure welding is performed until the temperature difference between the junction temperature of the semiconductor chip 3 and the heat sink temperature reaches a specified constant value. A rated current is applied to the semiconductor device, and cooling of the heat sink is started when the specified temperature difference reaches the upper limit, then cooling of the heat sink is stopped again when the temperature difference reaches the specified lower limit. In this method, such a thermal cycle is applied until the semiconductor device is destroyed. The measurement result of the thermal cycle characteristic is shown in FIG. 7 as a relative value where the thermal cycle characteristic value until the press-contact type semiconductor device according to the first comparative example described later is destroyed is “1.0”.

First Comparative Example: The press contact type semiconductor device according to the first comparative example is the press contact type semiconductor device described with reference to FIG.
Reference numeral 1 denotes a configuration corresponding to the first main electrode 1 and the first sintered metal plate 2 of the press-contact type semiconductor device according to the first embodiment, respectively. In the press-contact type semiconductor device according to the first comparative example, there is a variation in the thickness of the sintered metal plate 103 on the side of the emitter main electrode 104, and this variation in thickness is absorbed by the plastic deformation of the emitter main electrode 104. Therefore, the connecting portion of the emitter main electrode 104 with the semiconductor chip 3 is formed in a protruding shape (column shape) (see FIG. 21). That is, the sintered metal plate 103 does not include the machined surface 4A unlike the second sintered metal plate 4 according to the first embodiment. The thickness of the connection part of the emitter main electrode 104 is set to 15 mm as shown in FIG. 7, and the other thickness of the emitter main electrode 104 is set to 10 mm.

Further, in the press-contact type semiconductor device according to the first comparative example, the emitter main electrode 104 and the sintered metal plate 1
03 is electrically connected simply by the contact accompanying the pressure welding.

Second Comparative Example: In the press-contact type semiconductor device according to the second comparative example, a round chamfer 2B of the first sintered metal plate 2 of the press-contact type semiconductor device according to the first embodiment is formed. The other configuration is the same as that of the press-contact type semiconductor device according to the first embodiment, except that it is not performed.

Comparison between the first embodiment and the first comparative example: As shown in FIG. 7, when the thermal resistance value of the press-contact type semiconductor device according to the first comparative example is "1", The thermal resistance value of the press contact type semiconductor device according to the first embodiment is “0.75”.
That is, in the press-contact type semiconductor device according to the first embodiment, the surface of the second sintered metal plate 4 on the side of the semiconductor chip 3 is a machined surface 4A for eliminating a variation in thickness.
The variation in the thickness of the second sintered metal plate 4 is determined by the second main electrode 5.
Can be reduced by the plastic deformation of.
Therefore, the thickness of the second main electrode 5 itself can be reduced, and the thermal resistance can be reduced in accordance with the decrease in the thickness of the second main electrode 5.

Further, in the press-contact type semiconductor device according to the first embodiment, the surface of the second sintered metal plate 4, that is, the machined surface 4A is set within the range of undulation of 5 μm or less. From the point of view, it is possible to reduce the amount of the variation in the thickness of the second sintered metal plate 4 absorbed by the plastic deformation of the second main electrode 5. Accordingly, since the thickness of the second main electrode 5 itself can be reduced, the thermal resistance can be reduced in accordance with the reduction in the thickness of the second main electrode 5.

Further, in the press contact type semiconductor device according to the first embodiment, the second main electrode 5 and the second sintered metal plate 4
Are physically joined, so that the thermal resistance of both joints can be reduced.

Comparison between the first comparative example and the second comparative example: As shown in FIG. 7, when the thermal cycle characteristic value of the press-contact type semiconductor device according to the first comparative example is “1”, The thermal cycle characteristic value of the press contact type semiconductor device according to Comparative Example 2 is “0.
5 ", and the thermal cycle characteristic of the press-contact type semiconductor device according to the second comparative example is lowered only by not forming the round chamfer 2B at the end or the corner of the first sintered metal plate 2. That is, in the press-contact type semiconductor device according to the first embodiment, since the rounded chamfer 2B is provided at the end and the corner of the first sintered metal plate 2, the press-contact force applied to the semiconductor chip 3 and the like is reduced. And the heat cycle characteristics can be improved.

(Second Embodiment) [Basic Structure of Press-Contact Semiconductor Device] A press-contact semiconductor device according to a second embodiment of the present invention has a first main electrode and a first sintered body. An example in which the structure of the metal plate is the same as the structure of the second main electrode 4 and the second main electrode 5 of the press-contact type semiconductor device according to the first embodiment will be described. That is, the press-contact type semiconductor device according to the second embodiment is different from the one shown in FIG.
As shown in FIG. 1, a first main electrode 1 and a first sintered metal disposed on the first main electrode 1 (upper side in FIG. 9) and having a greater rigidity than the first main electrode 1 Plate 20, a semiconductor chip 3 on the first sintered metal plate 20, and a second
Is disposed on the second sintered metal plate 4 and the second sintered metal plate 4,
A second main electrode 5 having a lower rigidity than the second sintered metal plate 4, and a surface on the semiconductor chip 3 side of the first sintered metal plate 20 having a height H1 adjusted. Processing surface 20A
And the semiconductor chip 3 of the second sintered metal plate 4
Machined surface 4A with its height H2 adjusted
Is built as

The basic structure of each of the first main electrode 1, the semiconductor chip 3, the second sintered metal plate 4, and the second main electrode 5 is the same as that of the pressure contact type semiconductor device according to the first embodiment. It is almost the same as the corresponding configuration. As shown in FIG. 7, in the press-contact type semiconductor device according to the second embodiment, the first main electrode 1 is formed in a disk shape having a uniform thickness of about 4 mm over the entire area. The second main electrode 5 is formed in a disk shape having a uniform thickness of about 6 mm over the entire area.

The first sintered metal plate 20 is different from the first sintered metal plate 2 of the press contact type semiconductor device according to the first embodiment, and is similar to the second sintered metal plate 4. , Are configured as small sintered metal plates individually disposed on the plurality of semiconductor chips 3. The first sintered metal plate 20 has a second
Similarly to the sintered metal plate 4 described above, for example, a rectangular Mo plate having a side of 10 mm and a thickness of 1 mm to 2 mm can be practically used. That is, in the press-contact type semiconductor device according to the second embodiment, a plurality of semiconductor chips 3 are formed by two small sintered metal plates above and below the first sintered metal plate 20 and the second sintered metal plate 4. It is configured in such a structure that it is sandwiched individually. The first sintered metal plate 20 is electrically, mechanically and physically connected to the first main electrode 1 by bonding in the second embodiment and the subsequent embodiments of the present invention.

The first sintered metal plate 20, like the second sintered metal plate 4, is manufactured individually corresponding to the plurality of semiconductor chips 3, so that its thickness varies. Occurs. Accordingly, as described above, the surface of the first sintered metal plate 20 on the semiconductor chip 3 side is a machined surface 20A,
Height H1 of first sintered metal plate 20 from first main electrode 1
Has been adjusted. Machined surface 20A is machined surface 4
Like A, the surface is formed by mechanical polishing, grinding, or a similar processing method.

Machined surface 20 of first sintered metal plate 20
A, preferably the machined surface 20A of every first sintered metal plate 20 on which each semiconductor chip 3 is mounted,
In the second embodiment of the present invention, it is set within a range of swell of ± 5 μm or less, preferably ± 2 μm. That is, the height of the machined surface 20A of all the first sintered metal plates 20 is practically uniform and flat, and the thickness of the first sintered metal plate 20 has virtually no variation. is there.

Further, the plane size of the first sintered metal plate 20 is formed to be slightly smaller than the plane size of the semiconductor chip 3 in the second embodiment of the present invention. At least the semiconductor chip 3 of the plate 20
A rounded chamfer 20B is applied to the side end and the corner. The round chamfer 20 </ b> B is formed with the same radius of curvature as the round chamfer 4 </ b> B of the second sintered metal plate 4, and the contact portion between the end and the corner of the first sintered metal plate 20 and the semiconductor chip 3. (The press-contact portion) is prevented from causing stress concentration.

[Method of Manufacturing Press-Contact-Type Semiconductor Device] In the method of manufacturing the press-contact-type semiconductor device according to the second embodiment, the step of forming the first sintered metal plate 20 on the first main electrode 1 is described above. In the method of manufacturing the press-contact type semiconductor device according to the first embodiment, only the step of forming the second sintered metal plate 4 on the second main electrode 5 is the same as that of the first embodiment. This is the same as each step of the method for manufacturing the pressure contact type semiconductor device according to the example. (1) That is, first, a first main electrode (collector main electrode) 1 is prepared, and a first sintered metal plate 20 having a higher rigidity than the first main electrode 5 is provided on the first main electrode 1. (See FIG. 4 above). A plurality of first sintered metal plates 20 are provided corresponding to the plurality of semiconductor chips 3, and each of the plurality of first sintered metal plates 20 is connected to the first main electrode 1 by bonding. It has become. For joining between the first main electrode 1 and the first sintered metal plate 20, for example, an Ag / Cu eutectic brazing material can be practically used.

Here, the plurality of first sintered metal plates 20
Are formed by sintering Mo powder at a high temperature, similarly to the above-described second sintered metal plate 4, and thus have variations in thickness (see FIG. 4). .

Note that, like the second sintered metal plate 4, the first
It is preferable that a round chamfer 20B is formed in advance at least at an end or a corner of the sintered metal plate 20 at the time of pressure molding.

(2) In the plurality of first sintered metal plates 20 having different thicknesses (heights), the surface on the semiconductor chip 3 side is machined so that the height is uniformly adjusted to H1. A processing surface 20A is formed (see FIG. 5). Machined surface 2
By forming 0A, it is possible to eliminate variations in the thickness of the plurality of first sintered metal plates 20. For machining, grinding, polishing, or a similar process can be used practically. In such machining, the machined surface 20A is easily set to a range of undulation of ± 5 μm or less. be able to.

(3) Then, the semiconductor chips 3 are arranged on the machined surfaces 20A of the plurality of first sintered metal plates 20, respectively. Since the semiconductor chip 3 is mechanically held by pressure contact, the semiconductor chip 3 needs only to be positioned and simply placed on the first sintered metal plate 20 (see FIG. 6).

(4) On the other hand, a plurality of second sintered metal plates 4 are joined on the second main electrode 5 by a method similar to the method of manufacturing the press contact type semiconductor device according to the first embodiment. And the surface of the plurality of second sintered metal plates 4 on the semiconductor chip 3 side is machined to form a machined surface 4A uniformly adjusted to a height H2 (FIGS. 4 and 5). reference.).

(5) Thereafter, the second main electrode 5 is arranged on the plurality of semiconductor chips 3 with the second sintered metal plate 4 interposed therebetween. Then, a load is applied between the first main electrode 1 and the second main electrode 5 by the press contact stack, and a plurality of semiconductor chips 3 disposed between the first main electrode 1 and the second main electrode 5 are pressed into contact with each other. The press-contact type semiconductor device according to the second example of the embodiment of the present invention as shown can be completed.

[Test Results of Pressure-Contact Semiconductor Device] As shown in FIG. 7, the thermal resistance of the pressure-contact semiconductor device according to the second embodiment is “0.55”. That is, in the press-contact type semiconductor device according to the second embodiment, the first sintered metal plate 2
The surface of the second sintered metal plate 4 on the side of the semiconductor chip 3 is a machined surface 4A on which the thickness variation is eliminated. Therefore, the amount of the variation in the thickness of the first sintered metal plate 20 absorbed by the plastic deformation of the first main electrode 1 can be reduced, and the thickness of the second sintered metal plate 4 can be reduced. Can be reduced by the plastic deformation of the second main electrode 5. Therefore, the thickness of the first main electrode 1 and the second main electrode 5 itself can be reduced, and the thermal resistance is reduced in accordance with the decrease in the thickness of the first main electrode 1 and the second main electrode 5. Can be reduced.

Further, in the press-contact type semiconductor device according to the second embodiment, the first main electrode 1 and the first sintered metal plate 2
Since the second main electrode 5 and the second sintered metal plate 4 are physically joined to each other between 0 and 0, the thermal resistance of both joints can be reduced.

(Third Embodiment) [Basic Structure of Press-Contact Semiconductor Device] A press-contact semiconductor device according to a third embodiment of the present invention is a press-contact semiconductor device according to the first embodiment. In the apparatus, an example in which the structure of the second main electrode is changed will be described. That is, the third
As shown in FIG. 10, the press-contact type semiconductor device according to the embodiment of the present invention has a second main electrode 5 and a second main electrode 5 (in FIG. 10,
The second sintered metal plate 4 which is disposed on the lower side and has a plane larger than the connection surface 51 of the second main electrode 5, and on the second sintered metal plate 4 (in FIG. 10, (A lower side) and a semiconductor chip 3.

The basic structure of each of the first main electrode 1, the first sintered metal plate 2, the semiconductor chip 3, and the second sintered metal plate 4 is the same as that of the pressure contact type semiconductor according to the first embodiment. It is almost the same as the corresponding configuration of the device.

On the surface portion of the second main electrode 5 on the side of the semiconductor chip 3, in a region corresponding to each of the plurality of semiconductor chips 3, a protruding connection portion 50 having a prismatic shape is provided. The upper surface (lower surface in FIG. 10) of the protruding connection portion 50 is used as a connection surface 51 that is at least electrically connected to the second sintered metal plate 4. As shown in FIG. 7, in the press-contact type semiconductor device according to the third embodiment,
The first main electrode 1 is formed in a disk shape having a uniform thickness of about 8 mm over the entire area, and the second main electrode 5 has a connection surface 51 having a thickness of about 8 mm, and The non-connection surface has a thickness of about 6 mm and is partially formed in a disk shape having a different thickness. That is, the height (thickness) of the protruding connection portion 50 of the second main electrode 5 is set to about 2 mm.

Further, the length 5L of one side of the connection surface 51 of the second main electrode 5 is set to be shorter by twice ΔL than the length 4L of one side of the second sintered metal plate 4. The connection surface 51 is located at the center from the end surface of the second sintered metal plate 4 by ΔL. That is, by setting the relationship between the connection surface 51 of the second main electrode 5 and the second sintered metal plate 4 as described above, the second sintered metal plate 4 is formed by the second main electrode 5. When pressed uniformly, a local strong pressing force is not generated at the peripheral edge of the second sintered metal plate 4. In other words, a uniform pressing force is generated. In the press-contact type semiconductor device according to the third embodiment, if ΔL is too large, the thermal resistance of the protruding connection portion 50 increases. Therefore, ΔL is set to a small value within an appropriate range, specifically, 1 mm or less. It is preferable to set.

Similarly, the plane size of the second sintered metal plate 4 is at least within a range in which the entire surface of the second sintered metal plate 4 is electrically connected to the entire surface of the emitter electrode terminal of the semiconductor chip 3. The size is set smaller than the plane size of the semiconductor chip 3. As a result, a locally strong pressing force, particularly a strong pressing force at the peripheral portion, is not generated at the emitter electrode terminal of the semiconductor chip 3.

In the pressure contact type semiconductor device according to the third embodiment, the space between the connection surface 51 of the second main electrode 5 and the second sintered metal plate 4 is the pressure contact type semiconductor device according to the first embodiment. The second main electrode 5 and the second sintered metal plate 4 of the semiconductor device are electrically connected by bonding in the same manner as in the case of the second sintered metal plate 4. The machined surface 4 is provided on the surface of the second sintered metal plate 4 on the semiconductor chip 3 side.
A is formed. On the other hand, between the first main electrode 1 and the first sintered metal plate 2, the first main electrode 1 and the first sintered metal plate 2 of the press-contact type semiconductor device according to the first embodiment are provided. Are electrically connected by contact in the same manner as between

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 7, the thermal resistance of the press-contact semiconductor device according to the third embodiment is “0.70”. That is, in the press-contact type semiconductor device according to the third embodiment, the second sintered metal plate 4 having a larger plane than the connection surface 51 of the second main electrode 5 is provided, so that the second firing It is possible to prevent local and excessive pressing force from being applied to the binding metal plate 4,
Since the pressing force applied to the sintered metal plate 4 can be made uniform, the thermal resistance can be reduced.

(Fourth Embodiment) [Basic Structure of Press-Contact Semiconductor Device] A press-contact semiconductor device according to a fourth embodiment of the present invention is a press-contact semiconductor device according to the second embodiment. 14 illustrates an example in which the device and the press-contact type semiconductor device according to the third embodiment are combined. That is, as shown in FIG. 11, the press-contact type semiconductor device according to the fourth embodiment is provided on the first main electrode 1 and on the first main electrode 1 (upper side in FIG. 11). A first sintered metal plate 20 having a greater rigidity than the first main electrode 1;
The semiconductor chip 3 on the sintered metal plate 20, the second sintered metal plate 4 on the semiconductor chip 3, and the second sintered metal plate 4 And a second main electrode 5 having a lower rigidity than that of the first sintered metal plate 20. The surface of the first sintered metal plate 20 on the semiconductor chip 3 side is a machined surface 20A whose height H1 is adjusted. The surface of the second sintered metal plate 4 on the side of the semiconductor chip 3 is constructed as a machined surface 4A whose height H2 is adjusted. It is constructed by enlarging the plane of the binding metal plate 4.

The first main electrode 1, the first sintered metal plate 20,
Semiconductor chip 3, second sintered metal plate 4, second main electrode 5
Are basically the same as the corresponding configurations of the press-contact type semiconductor device according to the second embodiment or the third embodiment.

As shown in FIG. 7, in the press-contact type semiconductor device according to the fourth embodiment, the first main electrode 1 is formed in a disk shape having a uniform thickness of about 4 mm over the entire area. The second main electrode 5 is formed in a partially disc shape having a thickness of about 6 mm for the connection surface 51 and about 4 mm for the other non-connection surfaces. That is,
The height (thickness) of the protruding connection portion 50 of the second main electrode 5 is set to about 2 mm.

In the press-contact type semiconductor device according to the fourth embodiment, the first main electrode 1 and the first sintered metal plate 20 are electrically connected by bonding. A machined surface 20 </ b> A is formed on the surface of the first sintered metal plate 20 on the semiconductor chip 3 side. On the other hand, the connection surface 51 of the second main electrode 5 and the second sintered metal plate 4 are electrically connected by joining. A machined surface 4A is formed on the surface of the second sintered metal plate 4 on the semiconductor chip 3 side.

[Test Result of Press-Contact Semiconductor Device] As shown in FIG. 7, the thermal resistance value of the press-contact semiconductor device according to the fourth embodiment is “0.50”. That is, in the press-contact type semiconductor device according to the fourth embodiment, the thickness of the first main electrode 1 and the second main electrode 5 is reduced and the thermal resistance is reduced. Example 2 and Third
Thermal resistance can be reduced in the same manner as in the pressure contact type semiconductor device according to the embodiment.

Fifth Embodiment [Basic Structure of Press-Contact Semiconductor Device] A press-contact semiconductor device according to a fifth embodiment of the present invention is a press-contact semiconductor device according to the fourth embodiment. In the apparatus, an example in which the structure on the second main electrode side is further applied to the first main electrode side will be described. That is, as shown in FIG. 12, the press-contact type semiconductor device according to the fifth embodiment includes the first main electrode 1 and
Arranged on the first main electrode 1 (the upper side in FIG. 12), the first
A first sintered metal plate 20 having a larger plane than the connection surface 11 of the main electrode 1, and a semiconductor chip 3 on the first sintered metal plate 20 (the upper side in FIG. 12). And the second
Main electrode 5 and above the second main electrode 5 (the lower side in FIG. 12).
And a second sintered metal plate 4 having a plane larger than the connection surface 51 of the second main electrode 5.

The first sintered metal plate 20, the semiconductor chip 3,
The basic configuration of each of the second sintered metal plate 4, the second main electrode 5, and the like is substantially the same as the corresponding configuration of the press-contact type semiconductor device according to the fourth embodiment.

On the surface of the first main electrode 1 on the side of the semiconductor chip 3, a prism-shaped protruding connection portion 10 is provided in a region corresponding to each of the plurality of semiconductor chips 3. The upper surface (upper surface in FIG. 12) of the protruding connection portion 10 is used as a connection surface 11 that is at least electrically connected to the first sintered metal plate 20. As shown in FIG. 7, in the press-contact type semiconductor device according to the fifth embodiment, the first main electrode 1 has a connection surface 11 having a thickness of about 3 mm and other non-connection surfaces having a thickness of about 2 mm. The second main electrode 5 is formed in a disk shape having a partially different thickness.
Is formed in a disk shape with a partially different thickness in which the thickness of the connection surface 51 is about 6 mm and the thickness of the other non-connection surfaces is about 4 mm. That is, the height (thickness) of the protruding connection portion 10 of the first main electrode 1 is set to about 1 mm,
The height (thickness) of the protruding connection portion 50 of the second main electrode 5 is set to about 2 mm.

Further, the length 1 L of one side of the connection surface 11 of the first main electrode 1 is equal to the length 20 L of one side of the first sintered metal plate 20.
L is set to be twice ΔL shorter than L.
The connection surface 11 is located at the center by ΔL from the end surface of the first sintered metal plate 20. That is, the first
By setting the relationship between the connection surface 11 of the main electrode 1 and the first sintered metal plate 20 as described above, the first main electrode 1
Accordingly, when the first sintered metal plate 20 is uniformly pressed, a strong local pressure contact force is not generated at the peripheral edge of the first sintered metal plate 20. In other words,
An even pressing force is generated. In the press-contact type semiconductor device according to the fifth embodiment, if ΔL is too large, the thermal resistance of the protruding connection portion 10 increases.
L is preferably set to a small value within an appropriate range, specifically, 1 mm or less.

Similarly, at least the first sintered metal plate 20
Within the range in which the entire surface of the first sintered metal plate 2 is electrically connected to the entire surface of the collector electrode terminal of the semiconductor chip 3.
The plane size of 0 is set smaller than the plane size of the semiconductor chip 3. As a result, a locally strong pressing force, particularly a strong pressing force at the peripheral portion, is not generated at the collector electrode terminal of the semiconductor chip 3.

In the press-contact type semiconductor device according to the fifth embodiment, the connection surface 11 of the first main electrode 1 and the first sintered metal plate 20 are electrically connected by bonding. First
A machined surface 20A is formed on the surface of the sintered metal plate 20 on the semiconductor chip 3 side.

On the other hand, the connection surface 51 of the second main electrode 5 and the second
The connection structure between the second sintered metal plate 4 and the sintered metal plate 4 is the same as the connection structure between the connection surface 51 of the press-contact type semiconductor device according to the third embodiment and the second sintered metal plate 4.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 7, the thermal resistance value of the press-contact semiconductor device according to the fifth embodiment is “0.48”. That is, in the press-contact type semiconductor device according to the fifth embodiment, the thickness of the first main electrode 1 is reduced compared to the first main electrode 1 of the press-contact type semiconductor device according to the fourth embodiment, and the heat is reduced. Not only the resistance is reduced, but also compared to the first sintered metal plate 20 having a larger plane than the connection surface 11 of the first main electrode 1 and the connection surface 51 of the second main electrode 5. By providing the second sintered metal plate 4 having a large flat surface, the first sintered metal plate 20
In addition, it is possible to prevent local and excessive pressing force from being applied to the second sintered metal plate 4, and to make the pressing force uniform, so that thermal resistance can be reduced.

(Sixth Embodiment) [Basic Structure of Press-Contact Semiconductor Device] The press-contact semiconductor device according to the sixth embodiment of the present invention is the same as the press-contact semiconductor device according to the third embodiment. In the apparatus, an example in which the structure of the second main electrode is changed will be described. That is, the sixth
As shown in FIG. 13, the press-contact type semiconductor device according to the example of the second embodiment has a second main electrode 5 and a portion on the second main electrode 5 (in FIG.
(Lower side), a second sintered metal plate 4 having a greater rigidity than the second main electrode 5, and a semiconductor on the second sintered metal plate 4 (lower in FIG. 13). A groove 52 provided in the second main electrode 5 in a region corresponding to the contour of the second sintered metal plate 4 or in an outer peripheral region near the contour.
It is built with.

The basic structure of each of the first main electrode 1, the first sintered metal plate 2, the semiconductor chip 3, and the second sintered metal plate 4 is as described in the first embodiment or the third embodiment. The configuration is almost the same as the corresponding configuration of the pressure contact type semiconductor device according to the example.

The groove 52 is provided on the surface of the second main electrode 5 on the side of the semiconductor chip 3 in a region corresponding to each of the plurality of semiconductor chips 3. The groove 52 is a continuous body of concave portions dug down in the thickness direction of the second main electrode 5 from the surface of the second main electrode 5 on the side of the second sintered metal plate 4,
Similarly to the protruding connection portions 50 and the connection surfaces 51 of the press-contact type semiconductor device according to the third embodiment, the protruding connection portions 53 are provided at least in the region where the semiconductor chip 3 is provided, and the connection surfaces 54 are provided on the upper surfaces thereof. And is constituted. That is, the groove 52 is configured not to generate a local and excessively strong pressing force on the periphery of the second sintered metal plate 4 and further on the periphery of the semiconductor chip 3. The groove 52 is the sixth
In the press-contact type semiconductor device according to the second embodiment, the second sintered metal plate 4 is disposed on all the perimeters that coincide with the contour line, but is disposed intermittently over all the peripheries, for example. You may do so.

As shown in FIG. 7, in the press-contact type semiconductor device according to the sixth embodiment, the first main electrode 1 is formed in a disk shape having a uniform thickness of about 8 mm over the entire area. The second main electrode 5 is similarly formed in a disk shape having a uniform thickness of about 8 mm over the entire area. The groove of the second main electrode 5 is set so that the difference ΔL between the length 5L of the connection surface 51 and the length 4L of the second sintered metal plate 4 of the pressure contact type semiconductor device according to the third embodiment is obtained. The width of 52 is, for example, 1 mm
２2 mm or less, and the depth of the groove 52 is, for example, 1 mm
It is preferably set to 2 mm.

In the press-contact type semiconductor device according to the sixth embodiment, the first sintered metal plate 4 is provided between the connection surface 54 divided by the groove 52 of the second main electrode 5 and the second sintered metal plate 4. The second main electrode 5 and the second sintered metal plate 4 of the press-contact type semiconductor device according to the embodiment are electrically connected by bonding in the same manner as in the case. A machined surface 4A is formed on the surface of the second sintered metal plate 4 on the semiconductor chip 3 side. On the other hand, between the first main electrode 1 and the first sintered metal plate 2, the first
The first main electrode 1 and the first sintered metal plate 2 of the press-contact type semiconductor device according to the embodiment are electrically connected by contact in the same manner as in the first embodiment.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 7, the thermal resistance value of the press-contact semiconductor device according to the sixth embodiment is “0.73”. That is, in the press-contact type semiconductor device according to the sixth embodiment, the groove 52 is formed in a region of the second main electrode 5 which coincides with the contour of the second sintered metal plate 4 or in an outer peripheral region near the contour. Is provided, in particular, it is possible to prevent local and excessive pressing force from being applied to the second sintered metal plate 4, and it is possible to equalize the pressing force applied to the second sintered metal plate 4. As a result, the thermal resistance can be reduced.

(Seventh Embodiment) [Basic Structure of Press-Contact Semiconductor Device] The press-contact semiconductor device according to the seventh embodiment of the present invention is the same as the press-contact semiconductor device according to the sixth embodiment. In the apparatus, an example in which the structure of the second main electrode is applied to the structure of the first electrode will be described. That is, as shown in FIG. 14, the press-contact type semiconductor device according to the seventh embodiment is disposed on the first main electrode 1 and on the first main electrode 1 (the upper side in FIG. 14). A first sintered metal plate 20 having a higher rigidity than the first main electrode 1, a semiconductor chip 3 on the first sintered metal plate 20, and a second sintered metal plate 4 on the semiconductor chip 3; A second main electrode 5 disposed on the second sintered metal plate 4 and having a lower rigidity than the second sintered metal plate 4. In the region corresponding to the contour or the outer peripheral region near the contour, the groove 12 provided in the first main electrode 1 and the region corresponding to the contour of the second sintered metal plate 4 or the vicinity of the contour are In the outer peripheral region, the groove 52 provided in the second main electrode 5
It is built with.

The first sintered metal plate 20, the semiconductor chip 3,
The basic configuration of each of the second sintered metal plate 4 and the second main electrode 5 is substantially the same as the corresponding configuration of the press-contact type semiconductor device according to the second embodiment or the sixth embodiment. .

The groove 12 is provided in a surface portion of the first main electrode 1 on the semiconductor chip 3 side in a region corresponding to each of the plurality of semiconductor chips 3. The groove 12 extends from the surface of the first main electrode 1 on the first sintered metal plate 20 side to the first
Is a continuous body of concave portions dug down in the thickness direction of the main electrode 1, and at least the semiconductor chip 3 is disposed like the protruding connection portion 50 and the connection surface 51 of the press-contact type semiconductor device according to the third embodiment. Projecting connection portion 13
And a connection surface 14 on the upper surface thereof. That is, the groove 12 does not generate a local and excessively strong pressing force on the periphery of the first sintered metal plate 20 and further on the periphery of the semiconductor chip 3. Groove 1
2 is a press-contact type semiconductor device according to the seventh embodiment,
Although it is arranged on all the perimeters that match the contour of the first sintered metal plate 20, it may be intermittently arranged over all the perimeters, for example.

As shown in FIG. 7, in the press-contact type semiconductor device according to the seventh embodiment, the first main electrode 1 is formed in a disk shape having a uniform thickness of about 4 mm over the entire area. The second main electrode 5 is similarly formed in a disk shape having a uniform thickness of about 6 mm over the entire area. The groove of the first main electrode 1 is set so that the difference ΔL between the length 5L of the connection surface 51 and the length 4L of the second sintered metal plate 4 of the pressure contact type semiconductor device according to the third embodiment is obtained. 12 is, for example, 1 mm
２2 mm or less, and the depth of the groove 12 is, for example, 1 mm
It is preferably set to 2 mm.

In the press-contact type semiconductor device according to the seventh embodiment, the space between the connection surface 14 divided by the groove 12 of the first main electrode 1 and the first sintered metal plate 20 is the same as that of the sixth embodiment. The second main electrode 5 and the second sintered metal plate 4 of the press-contact type semiconductor device according to the embodiment are electrically connected by bonding in the same manner as in the case. A machined surface 20 </ b> A is formed on the surface of the first sintered metal plate 20 on the semiconductor chip 3 side.

On the other hand, the connection structure between the second main electrode 5 and the second sintered metal plate 4 is different from that of the second main electrode 5 and the second sintered metal plate of the press-contact type semiconductor device according to the sixth embodiment. The connection structure with the metal plate 4 is the same.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 7, the thermal resistance value of the press-contact semiconductor device according to the seventh embodiment is “0.55”. That is, in the press-contact type semiconductor device according to the seventh embodiment, the first main electrode 1 and the second main electrode 5 are of course thinned, and the first main electrode 1 By providing the groove 12 in a region corresponding to the contour of the sintered metal plate 20 or in a region around the contour near the contour, a local excessive pressing force is particularly applied to the first sintered metal plate 20. Can be prevented, the pressing force applied to the first sintered metal plate 20 can be made uniform, and the region of the second main electrode 5 that matches the contour of the second sintered metal plate 4 can be prevented. Alternatively, by providing the groove 52 in the outer peripheral region near the contour, it is possible to prevent a local excessive pressing force from being applied to the second sintered metal plate 4 in particular. Since the pressing force applied to the plate 4 can be made uniform, the thermal resistance can be further reduced. Kill.

(Eighth Embodiment) [Basic Structure of Press-Contact Semiconductor Device] The press-contact semiconductor device according to the eighth embodiment of the present invention is the same as the press-contact semiconductor device according to the seventh embodiment. The connection structure between the first main electrode 1 and the first sintered metal plate 20 of the device, and the connection structure of the press-contact type semiconductor device according to the fourth embodiment (or the third or fifth embodiment). 2 illustrates an example in which a second main electrode 5 and a connection structure of a second sintered metal plate 4 are combined. That is, as shown in FIG. 15, the press-contact type semiconductor device according to the eighth embodiment has the first main electrode 1 and the first main electrode 1 (see FIG. 15).
A first sintered metal plate 20 which is disposed on the middle and upper sides and has a greater rigidity than the first main electrode 1;
The upper semiconductor chip 3, the second sintered metal plate 4 on the semiconductor chip 3, and a flat surface which is disposed on the second sintered metal plate 4 and is smaller than the second sintered metal plate 4. A second main electrode 5 having a connection surface 51, and disposed on the first main electrode 1 in a region coinciding with the contour of the first sintered metal plate 20 or in an outer peripheral region near the contour. It is constructed with the groove 12 formed.

The connection structure between the first main electrode 1 and the first sintered metal plate 20 is the same as that of the first main electrode 1 and the first sintered metal plate of the press-contact type semiconductor device according to the seventh embodiment. 20 is the same as the connection structure. Further, the connection structure between the second sintered metal plate 4 and the second main electrode 5 is the same as the corresponding connection structure of the press-contact type semiconductor device according to the fourth embodiment.

As shown in FIG. 7, in the press-contact type semiconductor device according to the eighth embodiment, the first main electrode 1 is formed in a disk shape having a uniform thickness of about 4 mm over the entire area. The second main electrode 5 is formed in a partially disc shape having a thickness of about 6 mm for the connection surface 51 and about 4 mm for the other non-connection surfaces.

The connection surface 14 separated by the groove 12 of the first main electrode 1 and the first sintered metal plate 20 are electrically connected by joining, and similarly, the second main electrode 5 and the second sintered metal plate 4 are electrically connected by joining.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 7, the thermal resistance value of the press-contact semiconductor device according to the eighth embodiment is “0.53”. That is, in the press-contact type semiconductor device according to the eighth embodiment, the first main electrode 1 and the second main electrode 5 are of course thinned, and the first main electrode 1 By providing the groove 12 in a region that coincides with the contour of the sintered metal plate 20 or in the outer peripheral region near the contour, a local excessive pressing force is particularly applied to the first sintered metal plate 20. Can be prevented, and the pressing force applied to the first sintered metal plate 20 can be made uniform, so that the thermal resistance can be reduced. further,
In the press-contact type semiconductor device according to the eighth embodiment, the second
By providing the second sintered metal plate 4 having a larger plane than the connection surface 51 of the main electrode 5, it is possible to prevent a local excessive pressing force from being applied to the second sintered metal plate 4. Since the pressing force applied to the second sintered metal plate 4 can be made uniform, the thermal resistance can be reduced.

Ninth Embodiment [Basic Structure of Press-Contact Semiconductor Device] A press-contact semiconductor device according to a ninth embodiment of the present invention is a press-contact semiconductor device according to the fourth embodiment. This is an example in which a concave portion is provided on the surface of the first main electrode 1 of the device, and the structure of the first main electrode 1 is changed. That is, as shown in FIG. 16, the press contact type semiconductor device according to the ninth embodiment has a first main electrode 1 having a concave portion 15 on the surface and a first main electrode 1 on the first main electrode 1 (in FIG.
(Upper side), the first sintered metal plate 20 disposed in the recess 15 and the semiconductor chip 3 on the first sintered metal plate 20.
And a second sintered metal plate 4 on the semiconductor chip 3 and a flat surface (connection surface 51) provided on the second sintered metal plate 4 and smaller than the second sintered metal plate 4. And a second main electrode 5.

The first sintered metal plate 20, the semiconductor chip 3,
Second sintered metal plate 4, protruding connection portion 50 and connection surface 5
The basic configuration of each of the second main electrodes 5 having 1 is:
The configuration is almost the same as the corresponding configuration of the press contact type semiconductor device according to the fourth embodiment.

The recess 15 of the first main electrode 1 is a depression dug down from the surface of the first main electrode 1 on the side of the first sintered metal plate 20 in the thickness direction of the first main electrode 1. First main electrode 1
The effective thickness of the first main electrode is shortened, and the effective electric conduction path length and the heat conduction path length of the first main electrode are shortened.

As shown in FIG. 8, in the press-contact type semiconductor device according to the ninth embodiment, the first main electrode 1
The region (connecting surface) has a thickness of about 4 mm, and the other non-connecting surface has a thickness of about 5 mm. That is, in the press contact type semiconductor device according to the ninth embodiment, the depth of the recess 15 is 1 mm.
Is set to On the other hand, the second main electrode 5 is
1 is about 8 mm, and the thickness of the other non-connection surface is about 5 mm.

The bottom surface (connection surface) of the recess 15 of the first main electrode 1
And the first sintered metal plate 20 are electrically connected by joining. Similarly, the connection surface 51 of the second main electrode 5 and the second sintered metal plate 4 are joined together. Are electrically connected to each other.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 8, the thermal resistance value of the press-contact semiconductor device according to the ninth embodiment is “0.50”. That is, in the press-contact type semiconductor device according to the ninth embodiment, since the first main electrode 1 is provided with the concave portion 15, the effective thickness of the first main electrode 1 can be reduced. Of the main electrode 1 can be reduced. Further, in the press-contact type semiconductor device according to the ninth embodiment, the second sintered metal plate 4 having a larger plane than the connection surface 51 of the second main electrode 5 is provided, so that the second firing It is possible to prevent a local excessive pressing force from being applied to the binding metal plate 4 and to make the pressing force applied to the second sintered metal plate 4 uniform, so that the thermal resistance can be reduced. it can.

Tenth Embodiment [Basic Structure of Press-Contact Semiconductor Device] A press-contact semiconductor device according to a tenth embodiment of the present invention is the same as the press-contact semiconductor device according to the ninth embodiment. An example in which the second main electrode 5 of the device has the same structure as the second main electrode 5 of the press-contact type semiconductor device according to the sixth or seventh embodiment will be described. That is, as shown in FIG. 17, the press-contact type semiconductor device according to the tenth embodiment has the first main electrode 1 having the concave portion 15 on the surface, and the first main electrode 1 (the upper side in FIG. 17). , A first sintered metal plate 20 disposed in the recess 15 and a semiconductor chip 3 on the first sintered metal plate 20
A second sintered metal plate 4 on the semiconductor chip 3, and a second main electrode disposed on the second sintered metal plate 4 and having a lower rigidity than the second sintered metal plate 4. 5 in a region corresponding to the contour of the second sintered metal plate 4 or in an outer peripheral region near the contour, and further provided with a groove 52 provided in the second main electrode 5. ing.

The first main electrode 1 having the concave portion 15 on the surface,
The basic configuration of each of the first sintered metal plate 20 and the semiconductor chip 3 is substantially the same as the corresponding configuration of the press-contact type semiconductor device according to the ninth embodiment. Further, the second sintered metal plate 4, the groove 52 (and the protruding connection portion 53 and the connection surface 5)
The basic configuration of each of the second main electrodes 5 having 4) is substantially the same as the corresponding configuration of the press-contact type semiconductor device according to the sixth embodiment or the seventh embodiment.

As shown in FIG. 8, in the press-contact type semiconductor device according to the tenth embodiment, the first main electrode 1
The region 5 (connecting surface) has a thickness of about 4 mm, and the other non-connecting surfaces have a thickness of about 5 mm. On the other hand, the second main electrode 5
Has a thickness of the connection surface 54 of about 8 mm, excluding the groove 52,
The other non-connection surfaces are also formed in a disk shape having a substantially uniform thickness of about 8 mm.

The bottom surface (connection surface) of the recess 15 of the first main electrode 1
And the first sintered metal plate 20 are electrically connected by joining, and similarly, the connection surface 54 of the second main electrode 5 and the second sintered metal plate 4 are joined. Are electrically connected to each other.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 8, the thermal resistance value of the press-contact semiconductor device according to the tenth embodiment is “0.51”. That is, in the press-contact type semiconductor device according to the tenth embodiment, the first main electrode 1
Since the recess 15 is provided, the effective thickness of the first main electrode 1 can be reduced, and the thermal resistance of the first main electrode 1 can be reduced. Furthermore, in the press-contact type semiconductor device according to the tenth embodiment, the groove 52 is formed in a region of the second main electrode 5 which coincides with the contour of the second sintered metal plate 4 or in an outer peripheral region near the contour. Is provided, in particular, it is possible to prevent local and excessive pressing force from being applied to the second sintered metal plate 4, and it is possible to equalize the pressing force applied to the second sintered metal plate 4. As a result, the thermal resistance can be reduced.

(Eleventh Embodiment) [Basic Structure of Press-Contact Semiconductor Device] The press-contact semiconductor device according to the eleventh embodiment of the present invention is the same as the press-contact semiconductor device according to the eighth embodiment. This is an example in which the device and the press-contact type semiconductor device according to the ninth embodiment are combined. That is, as shown in FIG. 18, the press-contact type semiconductor device according to the eleventh embodiment has the first
And a first sintered metal plate 20 disposed in the recess 15 on the first main electrode 1 (the upper side in FIG. 18).
A semiconductor chip 3 on the first sintered metal plate 20, a second sintered metal plate 4 on the semiconductor chip 3, and a second sintered metal plate 4 disposed on the second sintered metal plate 4. A second main electrode 5 having a flat connection surface 51 smaller than the binding metal plate 4, and in a region coinciding with the contour of the first sintered metal plate 20 or in an outer peripheral region near the contour. , Concave portion 1 of first main electrode 1
5 is provided with a groove 12 provided on the bottom surface.

The first main electrode 1 having a concave portion 15 on the surface,
A first sintered metal plate 20, a semiconductor chip 3, a second sintered metal plate 4, and a second having a protruding connecting portion 50 and a connecting surface 51.
The basic configuration of each of the main electrodes 5 is substantially the same as the corresponding configuration of the press-contact type semiconductor device according to the ninth embodiment. The configuration of the groove 12 provided in the recess 15 of the first main electrode 1 is the same as the corresponding configuration of the press-contact type semiconductor device according to the eighth embodiment.

As shown in FIG. 8, in the press-contact type semiconductor device according to the eleventh embodiment, the first main electrode 1
The region 5 (connecting surface) has a thickness of about 3 mm, and the other non-connecting surfaces have a thickness of about 4 mm. On the other hand, the second main electrode 5
Is formed in a disc shape with a partially different thickness in which the thickness of the connection surface 54 is about 8 mm and the thickness of the other non-connection surfaces is also about 6 mm.

The bottom surface (connection surface) of the recess 15 of the first main electrode 1
And the first sintered metal plate 20 are electrically connected by joining. Similarly, the connection surface 51 of the second main electrode 5 and the second sintered metal plate 4 are joined together. Are electrically connected to each other.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 8, the thermal resistance value of the press-contact semiconductor device according to the eleventh embodiment is “0.45”. That is, in the press-contact type semiconductor device according to the eleventh embodiment, the first main electrode 1
Of course, the first main electrode 1
Since the recess 15 is provided, the effective thickness of the first main electrode 1 can be reduced, and the thermal resistance of the first main electrode 1 can be reduced. Further, in the press-contact type semiconductor device according to the eleventh embodiment, the connection surface 5 of the second main electrode 5 is formed.
By providing the second sintered metal plate 4 having a plane larger than that of the first sintered metal plate 1, it is possible to prevent a local and excessive pressing force from being applied to the second sintered metal plate 4. Since the pressing force applied to the sintered metal plate 4 can be made uniform, the thermal resistance can be reduced. Further, in the press contact type semiconductor device according to the eleventh embodiment, the first
In the region of the main electrode 1 corresponding to the contour line of the first sintered metal plate 20 or in the outer peripheral region near the contour line, the concave portion 15 is formed.
By providing the groove 12 on the bottom surface, it is possible to prevent a local and excessive pressing force from being applied to the first sintered metal plate 20 in particular, and to make the pressing force applied to the first sintered metal plate 20 uniform. Therefore, thermal resistance can be reduced.

(Twelfth Embodiment) [Basic Structure of Press-Contact Semiconductor Device] A press-contact semiconductor device according to a twelfth embodiment of the present invention is the same as that of the eleventh embodiment.
This is an example in which the first sintered metal plate 20 and the second sintered metal plate 4 are replaced with different materials, and are constructed with basically the same structure as the press-contact type semiconductor device according to the embodiment. That is, the pressure contact type semiconductor device according to the twelfth embodiment
Of the sintered metal plate 20 and the second sintered metal plate 4
It is constructed of plates (see FIG. 18). The heat resistance of the W plate is smaller than the heat resistance of the Mo plate. Similar to the Mo plate, the W plate is obtained by sintering W powder at a high temperature equal to or lower than the melting point, that is, by pressing.

The configuration other than the first sintered metal plate 20 and the second sintered metal plate 4 is the same as the corresponding configuration of the press-contact type semiconductor device according to the eleventh embodiment.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 8, the thermal resistance value of the press-contact semiconductor device according to the twelfth embodiment is the lowest “0.40”. That is, the first
In the press-contact type semiconductor device according to the second embodiment, the same effect as that obtained by the press-contact type semiconductor device according to the eleventh embodiment can be obtained. Since the sintered metal plate 4 is a W plate, the thermal resistance can be further reduced.

(Thirteenth Embodiment) [Basic Structure of Press-Contact Semiconductor Device] A press-contact semiconductor device according to a thirteenth embodiment of the present invention is the same as that of the eleventh embodiment.
The semiconductor chip 3 and the second sintered metal plate 4 are constructed in basically the same structure as the pressure-contact type semiconductor device according to the embodiment of the present invention.
This is for explaining an example in which a metal body is further provided between the above. That is, as shown in FIG. 19, the press-contact type semiconductor device according to the thirteenth embodiment has basically the same structure as the press-contact type semiconductor device according to the eleventh embodiment. The second intermediate metal body 7 is provided between the second sintered metal plate 4 and the second sintered metal plate 4.

The second intermediate metal member 7 basically has conductivity, and has a function of reducing friction and wear between the semiconductor chip 3 and the second sintered metal plate 4. ing.
As the second intermediate metal body 7, a Cu foil or the like having a surface plated with a hard metal such as Ni can be practically used. Ni used for the second intermediate metal body 7 is
Is an activation metal film for Mo, W, etc. of the sintered metal plate 4, and can activate reactivity at the time of joining. As the activated metal film, a Ti film or the like can be practically used in addition to the Ni film.

The second intermediate metal body 7 is provided between the second sintered metal plate 4 and the semiconductor chip 3 in order to reduce the pressing force applied to the semiconductor chip 3 at the end of the connection surface of the second sintered metal plate 4. It is preferably formed by an area that is larger than the connection area between them.

[Test Results of Pressure-Contact Semiconductor Device] As shown in FIG. 8, the thermal resistance value of the pressure-contact semiconductor device according to the thirteenth embodiment is “0.70”, and the thermal cycle characteristic is “1.5”. It is. That is, in the press-contact type semiconductor device according to the thirteenth embodiment, since the second intermediate metal body 7 is provided, the heat resistance slightly increases, but the press-contact type semiconductor device according to the eleventh embodiment described above. Since the semiconductor device has basically the same structure as the semiconductor device, a thermal resistance of about 70% can be obtained as compared with the press-contact type semiconductor device according to the first comparative example (a thermal resistance of about 30% is reduced). can do). Furthermore, in the press-contact type semiconductor device according to the thirteenth embodiment, since the second intermediate metal body 7 is provided, the frictional resistance of the contact surface between the semiconductor chip 3 and the second sintered metal plate 4 is increased. Can be reduced, and the shearing force generated on the surface of the semiconductor chip 3 can be reduced, so that the thermal cycle characteristics can be improved.

Fourteenth Embodiment [Basic Structure of Press-Contact Semiconductor Device] The press-contact semiconductor device according to the fourteenth embodiment of the present invention is the same as that of the thirteenth embodiment.
This is a modification of the press-contact type semiconductor device according to the embodiment, and describes an example in which a metal body is further provided between the semiconductor chip 3 and the first sintered metal plate 20. That is, the first
The press-contact type semiconductor device according to the fourth embodiment has basically the same structure as the press-contact type semiconductor device according to the thirteenth embodiment, as shown in FIG. A second intermediate metal body 7 is provided between the metal plate 4 and the first intermediate metal body 6 between the semiconductor chip 3 and the first sintered metal plate 20.

As the first intermediate metal body 6, the same one as the second intermediate metal body 7 can be used.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 8, the thermal resistance value of the press-contact semiconductor device according to the fourteenth embodiment is “0.85”, and the thermal cycle characteristic is “1.8”. It is. That is, in the press-contact type semiconductor device according to the fourteenth embodiment, since the first intermediate metal body 6 and the second intermediate metal body 7 are provided, although the thermal resistance slightly increases, Since the pressure contact type semiconductor device according to the eleventh embodiment has basically the same structure as that of the pressure contact type semiconductor device according to the first comparative example, a thermal resistance of about 85% can be obtained as compared with the pressure contact type semiconductor device according to the first comparative example. About a 15% reduction in thermal resistance). Furthermore, in the press-contact type semiconductor device according to the fourteenth embodiment, since the first intermediate metal body 6 and the second intermediate metal body 7 are provided, the semiconductor chip 3 and the first intermediate metal body 6 The frictional resistance of the contact surface between the semiconductor chip 3 and the contact surface between the semiconductor chip 3 and the second sintered metal plate 4 can be reduced, and the shear force generated on the surface of the semiconductor chip 3 can be reduced. Therefore, the thermal cycle characteristics can be further improved.

(Fifteenth Embodiment) [Basic Structure of Press-Contact Semiconductor Device] The press-contact semiconductor device according to a fifteenth embodiment of the present invention is the same as that of the fourteenth embodiment.
This is a modification of the press-contact type semiconductor device according to the embodiment, and describes an example in which the material of the metal body is changed. That is,
The press-contact type semiconductor device according to the fifteenth embodiment has basically the same structure as the press-contact type semiconductor device according to the fourteenth embodiment, and is provided between the semiconductor chip 3 and the first sintered metal plate 20. The first intermediate metal body 6 and the second sintered metal plate 7 between the semiconductor chip 3 and the second sintered metal plate 4 are each constructed by replacing a hard metal foil such as a Ni foil. .

[Test Results of Pressure-Contact Semiconductor Device] As shown in FIG. 8, the thermal resistance value of the pressure-contact semiconductor device according to the fifteenth embodiment is “0.88” and the thermal cycle characteristic is “2.0”. It is. That is, in the press-contact type semiconductor device according to the fifteenth embodiment, the first intermediate metal body 6 and the second intermediate metal body 7 are provided, and Ni foil is used for them. Although the thermal resistance is increased, it is basically constituted by the same structure as the press-contact type semiconductor device according to the eleventh embodiment, so that it is about 88% as compared with the press-contact type semiconductor device according to the first comparative example. (A thermal resistance of about 12% can be reduced). Further, in the press-contact type semiconductor device according to the fifteenth embodiment, the first intermediate metal body 6 and the second intermediate metal
Since the foil is used, the frictional resistance of the contact surface between the semiconductor chip 3 and the first intermediate metal body 6 and the contact surface between the semiconductor chip 3 and the second sintered metal plate 4 is improved. Since it can be further reduced and the shearing force generated on the surface of the semiconductor chip 3 can be reduced, the thermal cycle characteristics can be further improved.

(Sixteenth Embodiment) [Basic Structure of Press-Contact Semiconductor Device] The press-contact semiconductor device according to the sixteenth embodiment of the present invention is the same as that of the fourteenth embodiment.
This is a modification of the press-contact type semiconductor device according to the embodiment, and describes an example in which the material of the metal body is changed. That is,
The press-contact type semiconductor device according to the sixteenth embodiment has basically the same structure as that of the press-contact type semiconductor device according to the fourteenth embodiment, and is provided between the semiconductor chip 3 and the first sintered metal plate 20. Each of the first intermediate metal body 6 and the second sintered metal plate 7 between the semiconductor chip 3 and the second sintered metal plate 4 is constructed using Ag foil. Ag foil is the semiconductor chip 3
Fretting wear of Al used as a main electrode terminal material can be reduced. Further, the Ag foil has a contact surface between the first sintered metal plate 20 and the semiconductor chip 3,
In the contact surface between the sintered metal plate 4 and the semiconductor chip 3,
You can adapt.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 8, the heat-resistance value of the press-contact semiconductor device according to the sixteenth embodiment is “0.50”, and the thermal cycle characteristic is “1.0”. It is. That is, in the press contact type semiconductor device according to the sixteenth embodiment, the heat cycle characteristics cannot be improved as in the press contact type semiconductor device according to the fourteenth embodiment or the fifteenth embodiment. Since the Ag foil is used for each of the intermediate metal member 6 and the second intermediate metal member 7, the thermal resistance can be reduced.

Seventeenth Embodiment [Basic Structure of Press-Contact Semiconductor Device] The press-contact semiconductor device according to a seventeenth embodiment of the present invention is the same as that of the sixteenth embodiment.
This is a modification of the press-contact type semiconductor device according to the embodiment, and describes an example in which the material of the metal body is further changed. That is, in the press-contact type semiconductor device according to the seventeenth embodiment, the first intermediate metal body 6 between the semiconductor chip 3 and the first sintered metal plate 20, the semiconductor chip 3 and the second sintered metal plate Each of the second sintered metal plates 7 between No. 4 and No. 4 is constructed using a Cu foil whose surface is plated with Ag. The Cu foil whose surface is plated with Ag has the same function as the above Ag foil.

[Test Results of Press-Contact Semiconductor Device] As shown in FIG. 8, the heat-resistance value of the press-contact semiconductor device according to the seventeenth embodiment is “0.55”, and the thermal cycle characteristic is “1.0”. It is. That is, in the press-contact type semiconductor device according to the seventeenth embodiment, the same effects as those of the press-contact type semiconductor device according to the sixteenth embodiment can be obtained.

(Other Embodiments) The present invention has been described with reference to the above embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples, and operation techniques will be apparent to those skilled in the art.

For example, although the IGBT or the GTO is used for the semiconductor chip 3 of the press-contact type semiconductor device according to the plurality of embodiments, the present invention relates to the MOSFET, the SIT, and the BTO.
Semiconductor elements for high withstand voltage and large current capacity, such as JT and SI thyristor, can be used.

As described above, the present invention naturally includes various embodiments, examples, and the like not described herein. Accordingly, the technical scope of the present invention is determined only by the invention specifying matters according to the claims that are appropriate from the above description.

[0161]

According to the present invention, it is possible to provide a press-contact type semiconductor device capable of improving thermal resistance characteristics and thermal cycle characteristics.

Further, the present invention can provide a method of manufacturing a press-contact type semiconductor device which can obtain the above-mentioned effects.

[Brief description of the drawings]

FIG. 1 is a sectional view of a main part of a press-contact type semiconductor device according to a first example of an embodiment of the present invention.

FIG. 2 is a process sectional view of a press-contact type semiconductor device according to a first example of an embodiment of the present invention.

FIG. 3 is a process sectional view of the press-contact type semiconductor device following FIG. 2;

FIG. 4 is a process sectional view of the press-contact type semiconductor device following FIG. 3;

FIG. 5 is a process sectional view of the press-contact type semiconductor device following FIG. 4;

FIG. 6 is a cross-sectional view of a main part of the press-contact semiconductor device continued from FIG. 5;

FIG. 7 shows detailed items and characteristics evaluation results of the device structure of the press-contact semiconductor devices according to the first to eighth examples of the embodiment of the present invention and the press-contact semiconductor device according to the comparative example. It is a figure (the 1).

FIG. 8 is a diagram showing detailed items and characteristics evaluation results of the device structure of the press-contact semiconductor device according to ninth to seventeenth examples of the embodiment of the present invention, following FIG. ).

FIG. 9 is a sectional view of a main part of a press-contact type semiconductor device according to a second example of the embodiment of the present invention;

FIG. 10 is a sectional view of a main part of a press-contact type semiconductor device according to a third example of the embodiment of the present invention;

FIG. 11 is a sectional view of a main part of a press-contact type semiconductor device according to a fourth example of the embodiment of the present invention;

FIG. 12 is a sectional view showing a main part of a press-contact type semiconductor device according to a fifth example of the embodiment of the present invention;

FIG. 13 is a cross-sectional view of a main part of a press-contact semiconductor device according to a sixth example of the embodiment of the present invention;

FIG. 14 is a sectional view of a main part of a press-contact type semiconductor device according to Example 7 of the embodiment of the present invention;

FIG. 15 is a cross-sectional view of a main part of a press-contact type semiconductor device according to Example 8 of the embodiment of the present invention.

FIG. 16 is a sectional view of a main part of a press-contact type semiconductor device according to a ninth example of the embodiment of the present invention;

FIG. 17 is a sectional view of a main part of a press-contact type semiconductor device according to Example 10 of the embodiment of the present invention.

FIG. 18 is a sectional view showing a main part of a press-contact type semiconductor device according to Example 11 of the embodiment of the present invention.

FIG. 19 is a sectional view showing a main part of a press-contact semiconductor device according to a thirteenth example of the embodiment of the present invention;

FIG. 20 is a sectional view showing a main part of a press-contact type semiconductor device according to Example 14 of the embodiment of the present invention;

FIG. 21 is a sectional view of a main part of a press-contact type semiconductor device according to the prior art of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st main electrode 2, 20 1st sintered metal plate 2B, 4B, 20B R chamfering 4A, 20A Machined surface 3 Semiconductor chip 4 2nd sintered metal plate 5 2nd main electrode 6 1st Intermediate metal body 7 Second intermediate metal body 10, 13, 50, 53 Protruding connection portion 11, 14, 51, 54 Connection surface 12, 52 Groove 15 Recess

 ──────────────────────────────────────────────────続 き Continued from the front page (72) Inventor Atsushi Yamamoto 1 Toshiba-cho, Fuchu-shi, Tokyo Inside the Toshiba Fuchu Works Co., Ltd. 72) Inventor Hiroshi Ishiwatari 2-4, Suehirocho, Tsurumi-ku, Yokohama, Kanagawa Prefecture Inside the Toshiba Keihin Plant (72) Inventor Akira Tanaka 2-4, Suehirocho, Tsurumi-ku, Yokohama-shi, Kanagawa Prefecture Terms (reference) 5F047 JA01 JA02 JB08

Claims (15)

[Claims] A main electrode, a sintered metal plate disposed on the main electrode and having a higher rigidity than the main electrode, and a semiconductor chip on the sintered metal plate; A press-contact type semiconductor device, wherein a surface of a plate on a semiconductor chip side is a machined surface whose height is adjusted. 2. A first main electrode, a first sintered metal plate disposed on the first main electrode and having a greater rigidity than the first main electrode, A semiconductor chip on a tie metal plate, a second sintered metal plate on the semiconductor chip, and a second sintered metal plate disposed on the second sintered metal plate, the rigidity being higher than that of the second sintered metal plate. A press-contact type semiconductor device comprising: a small second main electrode; and a surface on the semiconductor chip side of the first and second sintered metal plates having a machined surface whose height is adjusted. 3. A main electrode, a sintered metal plate disposed on the main electrode and having a greater rigidity than the main electrode, and a plurality of semiconductor chips on the sintered metal plate. A press-contact type semiconductor device, wherein a surface of the sintered metal plate on the semiconductor chip side is set within a range of undulation of 5 μm or less in a mounting area of each of the plurality of semiconductor chips. 4. A main electrode, a sintered metal plate disposed on the main electrode and having a plane larger than a connection surface of the main electrode, and a semiconductor chip on the sintered metal plate. A pressure-contact type semiconductor device characterized by the above-mentioned. 5. A sintered metal plate, comprising: a main electrode; a sintered metal plate provided on the main electrode and having higher rigidity than the main electrode; and a semiconductor chip on the sintered metal plate. A press-contact type semiconductor device, further comprising a groove provided in the main electrode in a region coinciding with a contour of the plate or in an outer peripheral region near the contour. 6. A first main electrode, a first sintered metal plate disposed on the first main electrode and having a greater rigidity than the first main electrode, A semiconductor chip on a binding metal plate; a second sintered metal plate on the semiconductor chip; and a flat surface disposed on the second sintered metal plate and smaller than the second sintered metal plate. A second main electrode having a connection surface of the first sintered metal plate, and is disposed on the first main electrode in a region coinciding with the contour of the first sintered metal plate or in an outer peripheral region near the contour. A press-contact type semiconductor device further comprising a groove. 7. A first main electrode having a concave portion on the surface, a first sintered metal plate disposed in the concave portion on the first main electrode, and a first sintered metal. A semiconductor chip on a plate, a second sintered metal plate on the semiconductor chip, and a flat surface arranged on the second sintered metal plate and smaller than the second sintered metal plate A pressure-contact type semiconductor device comprising: a second main electrode. 8. A first main electrode having a concave portion on the surface, a first sintered metal plate disposed in the concave portion on the first main electrode, and a first sintered metal. A semiconductor chip on the plate, a second sintered metal plate on the semiconductor chip, and a second sintered metal plate disposed on the second sintered metal plate and having a lower rigidity than the second sintered metal plate. And a groove arranged in the second main electrode in a region corresponding to the contour of the second sintered metal plate or in an outer peripheral region near the contour. A pressure-contact type semiconductor device characterized by the above-mentioned. 9. A groove is further provided in a concave portion of the first main electrode in a region coinciding with a contour line of the first sintered metal plate or in an outer peripheral region near the contour line. The pressure-contact type semiconductor device according to claim 7 or 8, wherein 10. A frictional resistance between the sintered metal plate or the first sintered metal plate and the semiconductor chip or between the semiconductor chip and the second sintered metal plate. The press-contact type semiconductor device according to claim 1, further comprising an intermediate metal body to be reduced. 11. The sintered metal plate, a first sintered metal plate,
The pressure-contact type semiconductor device according to any one of claims 1 to 10, wherein a round chamfer is applied to at least one of an end and a corner of the second sintered metal plate. 12. The method according to claim 12, wherein the first main electrode and the first sintered metal plate are disposed between the main electrode and the sintered metal plate.
The pressure contact type semiconductor device according to any one of claims 1 to 11, wherein the main electrode and the second sintered metal plate are joined together. 13. At least a main electrode side on the sintered metal plate, at least a first main electrode side on the first sintered metal plate,
Or, at least on the second main electrode side of the second sintered metal plate,
2. An activation metal film for activating the reactivity of the brazing filler metal to the sintered metal plate.
3. The pressure-contact type semiconductor device according to 2. 14. A method for manufacturing a pressure contact type semiconductor device, comprising at least the following steps. (1) Step of forming a sintered metal plate having greater rigidity than the main electrode on the main electrode (2) Step of performing machining until the surface of the sintered metal plate reaches a predetermined height (3) A) placing a semiconductor chip on the machined surface of the sintered metal plate; 15. A method for manufacturing a pressure contact type semiconductor device, comprising at least the following steps. (1) A step of forming a first sintered metal plate having a higher rigidity than the first main electrode on the first main electrode (2) The surface of the first sintered metal plate has a predetermined surface (3) Forming a second sintered metal plate having higher rigidity on the second main electrode than the second main electrode (4) The second main electrode (5) arranging a semiconductor chip between the machined surfaces of the first and second sintered metal plates until the surface of the sintered metal plate reaches a predetermined height; Pressure contacting the semiconductor chip with a second main electrode