JP2002313740A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP2002313740A JP2002313740A JP2001118762A JP2001118762A JP2002313740A JP 2002313740 A JP2002313740 A JP 2002313740A JP 2001118762 A JP2001118762 A JP 2001118762A JP 2001118762 A JP2001118762 A JP 2001118762A JP 2002313740 A JP2002313740 A JP 2002313740A
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- JP
- Japan
- Prior art keywords
- quartz
- boat
- film
- tube
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウェハの成
膜工程に係り、特に縦型または横型のＣＶＤ炉に関する
ポリシリコンの成膜を伴う半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer film forming process, and more particularly to a semiconductor manufacturing apparatus for forming a polysilicon film in a vertical or horizontal CVD furnace.
【０００２】[0002]
【従来の技術】ＣＶＤ（Chemical Vapor Deposition ）
法は薄膜形成法の一つであり、基板表面に原料となるガ
スを供給し、化学反応により膜を形成する方法である。
ＬＳＩ製作においては主として多結晶Ｓｉ、Ｓｉ酸化膜
などのＳｉ系薄膜の形成に広く適用され、重要な技術と
なっている。2. Description of the Related Art CVD (Chemical Vapor Deposition)
The method is one of the thin film forming methods, in which a gas serving as a raw material is supplied to the surface of a substrate and a film is formed by a chemical reaction.
In LSI fabrication, it is widely applied to the formation of Si-based thin films such as polycrystalline Si and Si oxide films, and is an important technology.
【０００３】ＣＶＤ装置において、石英製のボート及び
チューブにおける堆積物が原因で発塵し、ウェハ製品に
パーティクル汚染が発生することが知られている。特
に、多結晶Ｓｉ膜の成膜では、ボート及びチューブ表面
に多結晶シリコンの堆積物が派生する。堆積物が厚くな
るに従って堆積物自体の割れ（クラック）が著しく、や
がて剥がれ落ちる。これが異物（パーティクル）として
ウェハ製品表面に付着し、ファンクション不良を起こす
一因となる。In a CVD apparatus, it is known that particles are generated due to deposits on a boat and a tube made of quartz, and particle contamination occurs in a wafer product. In particular, when a polycrystalline Si film is formed, a deposit of polycrystalline silicon is generated on the boat and tube surfaces. As the sediment becomes thicker, the sediment itself is remarkably cracked and eventually peels off. This adheres to the wafer product surface as foreign matter (particles), which causes a function failure.
【０００４】そこで、石英製のボート及びチューブにお
ける堆積物は、割れて剥離し始める前の所定厚さにてウ
ェットエッチで除去するように定期的なメンテナンスが
行われる。これにより、パーティクルは未然に回避でき
る。[0004] Therefore, regular maintenance is performed so that the deposits on the quartz boat and tube are removed by wet etching at a predetermined thickness before cracking and peeling start. Thereby, particles can be avoided beforehand.
【０００５】[0005]
【発明が解決しようとする課題】図２は、従来の問題を
示す石英製のボートまたはチューブの任意表面を示す断
面図である。石英製のボート及びチューブにおける堆積
物（多結晶シリコン）の除去の際、ウェットエッチ（Ｈ
ＦとＨＮＯ3 の混合液）で行うが、石英それ自体のエッ
チング量も相当ある。堆積物自体の割れ（クラック）を
介してエッチング液が深層に到達し母材である石英表面
に容易に達するからである。よって、パーティクル削減
のためウェットエッチングを伴うメンテナンスを頻繁に
行なうと、石英寿命が短くなる。これは石英製のボー
ト、チューブの寿命に他ならない。FIG. 2 is a cross-sectional view showing an arbitrary surface of a quartz boat or tube showing a conventional problem. When removing deposits (polycrystalline silicon) in quartz boats and tubes, a wet etch (H
(A mixed solution of F and HNO 3 ), but the etching amount of quartz itself is also considerable. This is because the etching solution reaches the deep layer through cracks in the deposit itself and easily reaches the quartz surface as the base material. Therefore, if maintenance involving wet etching is frequently performed to reduce particles, the life of quartz is shortened. This is the life of quartz boats and tubes.
【０００６】本発明は上記のような事情を考慮してなさ
れたもので、パーティクルを低減しつつ石英の寿命延長
が達成される高信頼性の半導体製造装置を提供しようと
するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a highly reliable semiconductor manufacturing apparatus which can extend the life of quartz while reducing particles.
【０００７】[0007]
【課題を解決するための手段】本発明に係る半導体製造
装置は、複数のウェハが載置される石英製のボートと、
前記ボートと共に複数のウェハが導かれ原料ガスの供給
によりウェハの成膜処理が行われる石英製のチューブと
を具備し、原料ガス雰囲気に晒される前記ボートとチュ
ーブの表面に、前記ウェハの成膜処理で派生する堆積物
と熱膨張係数の差が石英に比較して小さいバッファ膜を
予め被覆してなることを特徴とする。A semiconductor manufacturing apparatus according to the present invention comprises: a quartz boat on which a plurality of wafers are mounted;
A quartz tube on which a plurality of wafers are guided together with the boat and a film forming process of the wafer is performed by supplying a raw material gas; It is characterized in that it is preliminarily coated with a buffer film whose difference in thermal expansion coefficient is smaller than that of quartz derived from the treatment.
【０００８】上記本発明に係る半導体製造装置によれ
ば、ウェハの成膜処理で派生する堆積物の熱膨張係数が
石英に比較して大きいものほど割れ、剥離が早く起こる
ことに着目している。上記バッファ膜を石英表面へ被覆
することによって、堆積物がより厚く堆積されるまで割
れにくく、剥離を遅らせるようにした。これにより、チ
ューブ、ボートにおける堆積物除去のメンテナンス回数
削減に寄与する。また、バッファ膜によってエッチング
液から石英の母材がある程度保護される。According to the semiconductor manufacturing apparatus of the present invention, attention is paid to the fact that the larger the coefficient of thermal expansion of the deposit derived from the film forming process of the wafer is, compared to quartz, the faster the cracking and peeling occur. . By coating the buffer film on the quartz surface, the deposit is hardly broken until the deposit is deposited thicker, and the separation is delayed. This contributes to a reduction in the number of maintenance operations for removing deposits in tubes and boats. In addition, the base material of quartz is protected to some extent from the etching solution by the buffer film.
【０００９】本発明に係る好ましい実施態様としての半
導体製造装置は、複数のウェハが載置される石英製のボ
ートと、前記ボートと共に複数のウェハが導かれ原料ガ
スの供給により少なくともウェハへの多結晶Ｓｉ成膜処
理が行われる石英製のチューブとを具備し、原料ガス雰
囲気に晒される前記ボートとチューブの表面に予め窒化
ケイ素膜が被覆されていることを特徴とする。According to a preferred embodiment of the present invention, there is provided a semiconductor manufacturing apparatus comprising: a quartz boat on which a plurality of wafers are placed; A quartz tube on which a crystal Si film forming process is performed is provided, and a surface of the boat and the tube exposed to a raw material gas atmosphere is coated with a silicon nitride film in advance.
【００１０】上記本発明に係る半導体製造装置によれ
ば、窒化ケイ素膜と多結晶シリコン膜の熱膨張係数の差
は、石英と多結晶シリコン膜の熱膨張係数の差よりも小
さい。このため、石英表面に多結晶シリコン膜が堆積す
るのに比べて、窒化ケイ素膜表面に多結晶シリコン膜が
堆積する形態の方が、より厚く堆積形成されても割れ難
い。[0010] According to the semiconductor manufacturing apparatus of the present invention, the difference in thermal expansion coefficient between the silicon nitride film and the polycrystalline silicon film is smaller than the difference in thermal expansion coefficient between quartz and the polycrystalline silicon film. For this reason, the form in which the polycrystalline silicon film is deposited on the surface of the silicon nitride film is less likely to be broken even when deposited thicker than the case where the polycrystalline silicon film is deposited on the quartz surface.
【００１１】また、窒化ケイ素膜は、堆積した多結晶シ
リコン膜除去の際のエッチング液に対し、石英よりも耐
性がある（エッチングの選択比の差が大きい）。これに
より、石英製のチューブ及びボートは窒化ケイ素膜によ
って母材（石英）が保護される形態となる。The silicon nitride film is more resistant to an etching solution for removing the deposited polycrystalline silicon film than quartz (the difference in etching selectivity is larger). Thus, the base material (quartz) of the quartz tube and boat is protected by the silicon nitride film.
【００１２】[0012]
【発明の実施の形態】図１は、本発明の第一実施形態に
係る半導体製造装置の構成を示す概観図である。半導体
製造装置本体１００は、ＣＶＤ炉等に備えられた石英製
のチューブ１０１（アウターチューブ１０１ａ、インナ
ーチューブ１０１ｂ）を有する。アウターチューブ１０
１ａは、周囲の加熱体１０２で所定の温度に設定され、
原料ガスの供給によってウェハの成膜処理を行う。成膜
処理時には排気がなされる。FIG. 1 is a schematic view showing the configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention. The semiconductor manufacturing apparatus main body 100 has a quartz tube 101 (outer tube 101a, inner tube 101b) provided in a CVD furnace or the like. Outer tube 10
1a is set to a predetermined temperature by the surrounding heating body 102,
The film formation of the wafer is performed by supplying the source gas. During the film forming process, exhaust is performed.
【００１３】チューブ１０１の一方端の開口１０３は、
ウェハＷＦの搬入出口となっている。ボートベース１０
４は、複数のウェハＷＦが載置される石英製のボート１
０５をインナーチューブ１０１ｂの内外に導く（ロード
／アンロード）。ボートベース１０４は、チューブの開
口１０３を密閉する。An opening 103 at one end of the tube 101 is
It is a loading / unloading port for the wafer WF. Boat base 10
4 is a quartz boat 1 on which a plurality of wafers WF are placed.
05 is guided into and out of the inner tube 101b (load / unload). The boat base 104 seals the tube opening 103.
【００１４】本発明の実施形態では、ウェハの成膜処理
で派生する堆積物と熱膨張係数の差が石英に比較して小
さいバッファ膜１０６を予めチューブ１０１（１０１
ａ，１０１ｂ）表面及びボート１０５表面に被覆してな
る。すなわち、ウェハＷＦの成膜処理で派生する堆積物
の熱膨張係数が石英に比較して大きいものほど割れ、剥
離が早く起こることに着目している。つまり、上記バッ
ファ膜１０６を介することで堆積物の割れ、剥離を遅ら
せるようにした。これにより、チューブ１０１、ボート
１０５における堆積物除去のメンテナンス回数削減に寄
与する。In the embodiment of the present invention, the buffer film 106 having a smaller difference in thermal expansion coefficient than that of the deposit derived from the wafer film forming process as compared with quartz is previously filled in the tube 101 (101).
a, 101b) covering the surface and the surface of the boat 105; That is, attention is paid to the fact that the larger the thermal expansion coefficient of the deposit derived from the film forming process of the wafer WF as compared with quartz, the faster the cracking and peeling occur. That is, cracking and peeling of the deposit are delayed through the buffer film 106. This contributes to a reduction in the number of maintenance operations for removing deposits in the tube 101 and the boat 105.
【００１５】ここでは、製品ウェハＷＦに多結晶Ｓｉを
成膜する工程を例として考える。石英製のチューブ１０
１及びボート１０５に派生する堆積物（多結晶シリコ
ン）の割れ、剥離を抑制するバッファ膜１０６として、
窒化ケイ素膜（Ｓｉ3 Ｎ4 ）を採用している。窒化ケイ
素膜と多結晶シリコン膜の熱膨張係数の差は、石英と多
結晶シリコン膜の熱膨張係数の差よりも小さい。Here, a process of forming a polycrystalline Si film on the product wafer WF will be considered as an example. Quartz tube 10
1 and a buffer film 106 that suppresses cracking and peeling of the deposit (polycrystalline silicon) derived from the boat 105.
A silicon nitride film (Si 3 N 4 ) is employed. The difference in thermal expansion coefficient between the silicon nitride film and the polycrystalline silicon film is smaller than the difference in thermal expansion coefficient between quartz and the polycrystalline silicon film.
【００１６】上記各々の熱膨張係数を調べると、石英は
０．５、多結晶シリコン膜は２．２、窒化ケイ素膜は
３．４である。このように結晶シリコン膜は石英に比べ
て熱膨張係数が４．４倍大きいことがわかる。一方、窒
化ケイ素膜は３．４と結晶シリコン膜の熱膨張係数の
１．５倍程度であり、その差の割合は石英に比べて小さ
いものとなる。Examining the thermal expansion coefficients of the above, the quartz is 0.5, the polycrystalline silicon film is 2.2, and the silicon nitride film is 3.4. Thus, it can be seen that the crystalline silicon film has a coefficient of thermal expansion 4.4 times larger than that of quartz. On the other hand, the silicon nitride film is 3.4, which is about 1.5 times the thermal expansion coefficient of the crystalline silicon film, and the ratio of the difference is smaller than that of quartz.
【００１７】バッファ膜１０６としての窒化ケイ素膜
（Ｓｉ3 Ｎ4 ）は、例えば次のように構成される。Ｓｉ
Ｈ2 Ｃｌ2 、ＮＨ3 の混合ガスを炉内に導入し、Ｓｉ3
Ｎ4膜を石英製のチューブ１０１及びボート１０５表面
に３〜１０μｍ被覆する。３〜１０μｍとしたのは、薄
いと石英表面に対するバリア性に乏しく、厚いとクラッ
クが発生する危険性が増すためである。The silicon nitride film (Si 3 N 4 ) as the buffer film 106 is constituted, for example, as follows. Si
A mixed gas of H 2 Cl 2 and NH 3 is introduced into the furnace, and Si 3
The N 4 film is coated on the surface of the quartz tube 101 and the boat 105 at 3 to 10 μm. The reason for setting the thickness to 3 to 10 μm is that when the thickness is thin, the barrier property against the quartz surface is poor, and when the thickness is large, the risk of cracks increases.
【００１８】このように予め窒化ケイ素膜のバッファ膜
１０６を被覆した状態で、ＳｉＨ4等の原料ガスをチュ
ーブ内に導入して製品ウェハＦＷに多結晶Ｓｉを成膜す
る。すると、石英母材表面に多結晶シリコン膜が直接堆
積するのに比べて、割れや剥離がし難く、より厚く堆積
されても製品に悪影響を及ぼすことはなくなった。In a state where the buffer film 106 of the silicon nitride film is coated in advance, a source gas such as SiH 4 is introduced into the tube to form a polycrystalline Si film on the product wafer FW. Then, as compared with the case where the polycrystalline silicon film is directly deposited on the surface of the quartz base material, the polycrystalline silicon film is less likely to be cracked or peeled off, and the thicker deposited film does not adversely affect the product.
【００１９】チューブ１０１及びボート１０５に堆積さ
れる多結晶シリコン膜は厚くなるほど割れは多くなる。
しかし、石英母材に直接多結晶シリコン膜が堆積する従
来に比べ、割れ始める膜厚が大きくなった。膜厚モニタ
によれば、石英母材に直接多結晶シリコン膜が堆積する
従来では２〜４μｍで割れ始めていたが、窒化ケイ素膜
のバッファ膜１０６を介しての多結晶シリコン膜の堆積
であれば５〜７μｍ程度まで耐えられるようになった。
また、膜割れの密度も従来の半分程度に減少した。この
結果、製品に影響するパーティクル量は従来の２／３程
度にまで減少させることができる。As the thickness of the polycrystalline silicon film deposited on the tube 101 and the boat 105 increases, the number of cracks increases.
However, the film thickness at which cracking began was larger than in the conventional case where a polycrystalline silicon film was directly deposited on a quartz base material. According to the film thickness monitor, the polycrystalline silicon film was originally deposited directly on the quartz base material and started to crack at 2 to 4 μm, but if the polycrystalline silicon film was deposited via the buffer film 106 of the silicon nitride film, It can withstand up to about 5 to 7 μm.
Also, the density of film cracks has been reduced to about half of the conventional level. As a result, the amount of particles affecting the product can be reduced to about 2/3 of the conventional amount.
【００２０】また、バッファ膜１０６としての窒化ケイ
素膜は、堆積した多結晶シリコン膜除去の際のエッチン
グ液（ＨＦとＨＮＯ3 の混合液）に対し、石英よりも耐
性がある（エッチング選択比の差が大きい）。これによ
り、石英製のチューブ１０１及びボート１０５は被覆さ
れた窒化ケイ素膜によって母材（石英）が保護される形
態となり、チューブ１０１及びボート１０５自体のエッ
チ量を大幅に低減させることができる。The silicon nitride film as the buffer film 106 is more resistant to an etching solution (a mixture of HF and HNO 3 ) than quartz when removing the deposited polycrystalline silicon film (an etching selectivity). The difference is large). Accordingly, the base material (quartz) is protected by the coated silicon nitride film on the tube 101 and the boat 105 made of quartz, and the amount of etching of the tube 101 and the boat 105 can be significantly reduced.
【００２１】上記構成によれば、母材の石英表面にバッ
ファ膜として窒化ケイ素膜を被覆しておくことによっ
て、多結晶Ｓｉの成膜時に派生する多結晶シリコン膜の
堆積物が従来より厚く堆積されるまで、割れや剥離を抑
えることができる。これにより、チューブ、ボートにお
ける堆積物除去のメンテナンス回数削減が達成される。
さらに、バッファ膜によってエッチング液から石英の母
材がある程度保護されることもあって、石英寿命、すな
わち、石英製のボート、チューブの寿命延長に寄与す
る。実績として１．５倍程度の寿命延長が達成された。According to the above configuration, the quartz surface of the base material is coated with the silicon nitride film as the buffer film, so that the polycrystalline silicon film deposit derived at the time of forming the polycrystalline Si is deposited thicker than before. Until this occurs, cracking and peeling can be suppressed. This achieves a reduction in the number of maintenance operations for removing deposits in tubes and boats.
Further, the base material of quartz is protected to some extent from the etching solution by the buffer film, which contributes to the extension of the life of quartz, that is, the life of quartz boats and tubes. As a result, a life extension of about 1.5 times was achieved.
【００２２】なお、本発明は上記実施形態に限らず、横
型ＣＶＤ炉等、他のあらゆる形態の成膜に関するＣＶＤ
装置に有効である。また、多結晶Ｓｉの成膜に限らず、
他の成膜に関しても、原料ガス雰囲気に晒される石英製
のボートとチューブの表面に、成膜処理で派生する堆積
物と熱膨張係数の差が石英に比較して小さいバッファ膜
を予め被覆しておけばよい。これにより、本発明と同様
の効果により石英製のボート、チューブまたは処理チャ
ンバ内壁の寿命を伸ばすことができる。The present invention is not limited to the above-described embodiment.
Effective for equipment. Also, not limited to polycrystalline Si film formation,
For other film formations, the surface of the quartz boat and tube exposed to the source gas atmosphere is coated in advance with a buffer film that has a smaller difference in thermal expansion coefficient than deposits derived from the film formation process. You should leave it. Accordingly, the life of the quartz boat, tube, or inner wall of the processing chamber can be extended by the same effect as the present invention.
【００２３】[0023]
【発明の効果】以上説明したように本発明によれば、母
材の石英表面にバッファ膜として窒化ケイ素膜を被覆し
ておくことによって、ウェハへの成膜時に派生する堆積
物と熱膨張係数の差が石英に比較して小さいバッファ膜
を予めチューブ表面及びボート表面に被覆しておく。こ
れにより、堆積物の割れや剥離を抑え、チューブ及びボ
ートにおける堆積物除去のメンテナンス回数削減が達成
される。また、母材の石英表面の保護にも寄与する。こ
の結果、パーティクルを低減しつつ石英の寿命延長が達
成される高信頼性の半導体製造装置を提供することがで
きる。As described above, according to the present invention, by depositing a silicon nitride film as a buffer film on the quartz surface of the base material, deposits generated during film formation on the wafer and the coefficient of thermal expansion are formed. A buffer film having a smaller difference than that of quartz is previously coated on the tube surface and the boat surface. Thereby, cracking and peeling of the deposit are suppressed, and the number of maintenance operations for removing the deposit in the tube and the boat is reduced. It also contributes to protection of the quartz surface of the base material. As a result, it is possible to provide a highly reliable semiconductor manufacturing apparatus capable of extending the life of quartz while reducing particles.
【図１】本発明の第一実施形態に係る半導体製造装置の
構成を示す概観図である。FIG. 1 is an outline view showing a configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.
【図２】従来の問題を示す石英製のボートまたはチュー
ブの任意表面を示す断面図である。FIG. 2 is a cross-sectional view showing an arbitrary surface of a quartz boat or tube showing a conventional problem.
１００…半導体製造装置本体 １０１…石英製のチューブ １０２…加熱体 １０３…開口 １０４…ボートベース １０５…ボート １０６…バッファ膜 ＷＦ…ウェハ REFERENCE SIGNS LIST 100 semiconductor manufacturing device main body 101 quartz tube 102 heating element 103 opening 104 boat base 105 boat 106 buffer film WF wafer
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K030 BA29 BB03 DA06 FA10 KA04 KA09 KA47 LA15 5F031 CA02 HA62 HA63 MA28 PA06 PA24 PA26 5F045 AB03 BB15 DP19 EB03 EC02 EM08 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 BA29 BB03 DA06 FA10 KA04 KA09 KA47 LA15 5F031 CA02 HA62 HA63 MA28 PA06 PA24 PA26 5F045 AB03 BB15 DP19 EB03 EC02 EM08
Claims (2)
トと、 前記ボートと共に複数のウェハが導かれ原料ガスの供給
によりウェハの成膜処理が行われる石英製のチューブと
を具備し、 原料ガス雰囲気に晒される前記ボートとチューブの表面
に、前記ウェハの成膜処理で派生する堆積物と熱膨張係
数の差が石英に比較して小さいバッファ膜を予め被覆し
てなることを特徴とする半導体製造装置。1. A quartz boat on which a plurality of wafers are mounted, and a quartz tube on which a plurality of wafers are guided together with the boat and a film forming process of the wafer is performed by supplying a source gas; The surface of the boat and the tube exposed to the source gas atmosphere is preliminarily coated with a buffer film having a difference in thermal expansion coefficient smaller than that of a deposit derived from the film forming process of the wafer as compared with quartz. Semiconductor manufacturing equipment.
トと、 前記ボートと共に複数のウェハが導かれ原料ガスの供給
により少なくともウェハへの多結晶Ｓｉ成膜処理が行わ
れる石英製のチューブとを具備し、 原料ガス雰囲気に晒される前記ボートとチューブの表面
に予め窒化ケイ素膜が被覆されていることを特徴とする
半導体製造装置。2. A quartz boat on which a plurality of wafers are mounted, and a quartz tube on which a plurality of wafers are guided together with the boat and at least a polycrystalline Si film forming process is performed on the wafers by supplying a source gas. A semiconductor manufacturing apparatus comprising: a boat and a tube that are exposed to a source gas atmosphere;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001118762A JP2002313740A (en) | 2001-04-17 | 2001-04-17 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001118762A JP2002313740A (en) | 2001-04-17 | 2001-04-17 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002313740A true JP2002313740A (en) | 2002-10-25 |
Family
ID=18969097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001118762A Withdrawn JP2002313740A (en) | 2001-04-17 | 2001-04-17 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002313740A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7964516B2 (en) | 2008-03-14 | 2011-06-21 | Tokyo Electron Limited | Film formation apparatus for semiconductor process and method for using same |
| KR20220082677A (en) * | 2020-12-10 | 2022-06-17 | (주)티티에스 | Quartz tube coating apparatus |
| CN116598193A (en) * | 2023-07-17 | 2023-08-15 | 粤芯半导体技术股份有限公司 | Method for forming polycrystalline silicon film and method for removing pollutants in LPCVD (low pressure chemical vapor deposition) process |
-
2001
- 2001-04-17 JP JP2001118762A patent/JP2002313740A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7964516B2 (en) | 2008-03-14 | 2011-06-21 | Tokyo Electron Limited | Film formation apparatus for semiconductor process and method for using same |
| KR20220082677A (en) * | 2020-12-10 | 2022-06-17 | (주)티티에스 | Quartz tube coating apparatus |
| KR102555693B1 (en) * | 2020-12-10 | 2023-07-14 | (주)티티에스 | Quartz tube coating apparatus |
| CN116598193A (en) * | 2023-07-17 | 2023-08-15 | 粤芯半导体技术股份有限公司 | Method for forming polycrystalline silicon film and method for removing pollutants in LPCVD (low pressure chemical vapor deposition) process |
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