JP2002311563A - Device and method for generating correction table, device and method for generating mask pattern for correction table, device and method for generating mask pattern for fine working, and method for forming fine working pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a correction table generating device and method for accurately correcting a process proximity effect by a rule base, a device and a method for generating a mask pattern for a correction table, a device and a method for generating a mask pattern for fine working, and a method for forming a fine working pattern. SOLUTION: Gate line width for a sample is measured and gate line width A most close to target line width T and the gate pattern line width B of a mask for a corresponding correction table are found out for each pattern shape using space between the gate line width and a pattern as a parameter (S2). A correction value (a) for biasing the gate pattern of the fine working mask is calculated from a difference between the gate line width A and the target line width T (S3), an additional correction value (b) is calculated from the difference between the gate line width A and the target line width T while considering an MEF calculated for each pattern shape (S4) and a final correction value (c) is calculated for each pattern shape by adding the additional correction value (b) to the correction value (a) (S5).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an apparatus and method for creating a correction table, an apparatus and method for creating a mask pattern for a correction table, an apparatus and method for creating a mask pattern for fine processing, and the formation of a fine processing pattern. The present invention relates to a method and apparatus for creating a correction table for correcting a process proximity effect generated when forming a microfabricated pattern by photolithography and etching steps in manufacturing a semiconductor device on a rule basis, and a correction table thereof. And method for creating a correction table mask pattern for creating a mask pattern, an apparatus and method for creating a fine processing mask pattern to be corrected using a correction table, and a fine processing pattern using the corrected fine processing mask pattern. It relates to a forming method.

[0002]

2. Description of the Related Art IC (Integrated Circuit)
In the photolithography process in the manufacturing process of semiconductor devices such as semiconductors, the optical proximity effect (Optical Proximity Effect) becomes large with the miniaturization and high integration of the pattern, and the mask pattern and the resist to which this mask pattern is transferred The phenomenon that the shape of the pattern does not match occurs. Also, in the etching step of finely processing the underlayer using the resist pattern to which this mask pattern has been transferred, a loading effect that causes a difference in the conversion difference due to the difference in pattern shape and the density of the pattern density appears. A phenomenon occurs in which the shape does not match the microfabricated pattern of the base layer that has been etched.

[0003] Therefore, in order to make the microfabricated pattern of the underlying layer after etching into a desired pattern shape, for example, an optical proximity effect and a loading effect in a photolithography and etching process are likely to occur.
When forming a gate pattern of a circuit, a rule-based process is used in which a required pattern correction amount is tabulated based on the pattern shape in advance, and the tabulated correction amount is reflected when a mask pattern is manufactured. Proximity effect correction is commonly employed.

In the correction of the process proximity effect on the optical proximity effect and the loading effect in the photolithography and etching processes on a rule basis, the shape deviation between a mask pattern generated in the photolithography process and a resist pattern to which the mask pattern has been transferred. The amount of correction is determined by the amount and the amount of shape deviation between the resist pattern and the microfabricated pattern of the underlayer that occur in the etching step. Each of these shape deviation amounts differs depending on the pattern shape.
Therefore, the correction amount of the process proximity effect correction needs to be tabulated based on the pattern shape of the mask pattern. This correction table is generally created as follows.

For example, in the case of a line (Line) pattern, the L & S (line and space) pattern and the isolated pattern have different pattern shapes.
That is, a mask for preparing a correction table in which test patterns having the mask pattern line width and the space between patterns are arranged as parameters is prepared, and a sample is prepared through a photolithography and etching process using the mask for preparing a correction table. Then, the pattern line width of the fine processing pattern formed on the sample is measured, the fine processing pattern closest to the target target pattern line width is selected from the pattern line widths, and the corresponding mask pattern line width is determined. Subsequently, the difference between the mask pattern line width and the target pattern line width is obtained, and the shift amount is calculated as a correction amount. In this way, the correction amount of the mask pattern is determined for each mask pattern line width and inter-pattern space as parameters.

However, since a mask pattern is drawn using a mask drawing apparatus, it is impossible to draw a pattern smaller than the minimum grid of the mask drawing apparatus. Therefore,
It is necessary to digitize the correction amount of the mask pattern by the minimum grid of the mask drawing apparatus. In this way, the correction amount of the mask pattern obtained for each mask pattern line width and the space between the patterns having different pattern shapes is digitized by the minimum grid of the mask drawing apparatus,
Create a correction table.

[0007]

However, when a correction table for performing the conventional rule-based process proximity effect correction is created, a test pattern drawn on a mask for creating a correction table is used. And the mask pattern of the actual micro-processing mask
Since there is a deviation in the pattern shape and the pattern density, there is a problem that it is difficult to calculate an accurate correction amount. In addition, since the correction amount calculated using this test pattern is digitized by the minimum grid of the mask drawing apparatus, there is a problem that it is difficult to obtain an accurate correction amount from this point as well. Further, even in the case of correcting the mask pattern of the fine processing mask using the correction table, in the actual photolithography and etching process, the fine processing pattern is not corrected by the correction amount. In addition, since the effect of the correction depends on the pattern shape, there is a problem that the degree to which the fine processing pattern is finally corrected varies.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has an apparatus and a method for creating a correction table capable of accurately correcting a process proximity effect on a rule basis, and creates the correction table. And method for forming a mask pattern for a correction table, a method and apparatus for forming a mask pattern for fine processing to be corrected using a correction table, and a method for forming a fine processing pattern using the corrected mask pattern for fine processing The purpose is to provide.

[0009]

The object of the present invention is to provide an apparatus and method for creating a correction table according to the present invention described below.
The present invention is attained by a device and a method for forming a correction table mask pattern, a device and a method for forming a fine processing mask pattern, and a method for forming a fine processing pattern. That is, the correction table creation device according to claim 1 is
An apparatus for creating a correction table for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a rule basis with respect to a fine processing mask pattern, which is formed using a predetermined correction table mask. A sample for inputting data of a fine processing pattern width closest to a predetermined target pattern width and a mask pattern width corresponding to the fine processing pattern width for each predetermined pattern shape based on the measurement result of the fine processing pattern for the sample. A measurement data input unit, a correction amount calculation unit that calculates a deviation amount of the mask pattern width input from the sample measurement data input unit from the target pattern width as a correction amount for each predetermined pattern shape, and a mask for a correction table mask Of fine pattern width to variation of pattern width The ratio of the momentum, mask error enhancement factor for each predetermined pattern (Mask Error enhancement Fac
tor; hereinafter abbreviated as “MEF”)
The difference between the target pattern width and the fine processing pattern width input to the calculation unit and the sample measurement data input unit is represented by M
An additional correction amount calculating unit that calculates an additional correction amount for each predetermined pattern shape by dividing by the MEF calculated by the EF calculating unit, and an additional correction amount calculating unit that calculates the correction amount calculated by the correction amount calculating unit. A final correction amount calculation unit for obtaining a final correction amount for each predetermined pattern shape by adding an additional correction amount.

As described above, in the correction table creating apparatus according to the first aspect, based on the measurement result of the microfabricated pattern for the sample formed using the predetermined correction table mask, it is closest to the predetermined target pattern width. A sample measurement data input unit for inputting data of the fine processing pattern width and mask pattern width corresponding to the fine processing pattern width for each predetermined pattern shape, and a predetermined target of the mask pattern width input to the sample measurement data input unit In addition to having a correction amount calculating unit that calculates the amount of deviation from the pattern width as a correction amount for each predetermined pattern shape, the variation amount of the fine processing pattern width with respect to the variation amount of the mask pattern width of the correction table mask A MEF calculator for calculating the ratio as the MEF for each predetermined pattern shape; And calculating an additional correction amount for each predetermined pattern shape by dividing a deviation amount between the predetermined target pattern width and the fine processing pattern width by the calculated MEF. By adding the additional correction amount calculated by the amount calculation unit to the correction amount calculated by the correction amount calculation unit and obtaining the final correction amount for each predetermined pattern shape, the correction effect has pattern shape dependency. In consideration of this, the final correction amount is calculated, so that a more accurate correction table is created.

According to a second aspect of the present invention, there is provided a correction table for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a fine processing mask pattern on a rule basis. The method of the above, based on the measurement results of the fine processing pattern for a sample formed using a predetermined correction table mask, corresponding to the fine processing pattern width closest to the predetermined target pattern width and the fine processing pattern width The data of the mask pattern width to be
Calculating a shift amount of the mask pattern width from the target pattern width as a correction amount for each predetermined pattern shape; and calculating a ratio of a variation amount of the fine processing pattern width to a variation amount of the mask pattern width of the correction table mask. ,
Calculating a MEF for each predetermined pattern shape, calculating an additional correction amount for each predetermined pattern shape by dividing the amount of deviation between the target pattern width and the fine processing pattern width by the MEF; Adding an additional correction amount to the amount to obtain a final correction amount for each predetermined pattern shape.

Thus, in the method of creating a correction table according to the second aspect, based on the measurement result of the microfabricated pattern for the sample formed using the predetermined mask for the correction table, the width closest to the predetermined target pattern width is obtained. In addition to a step of obtaining data of the fine processing pattern width and a mask pattern width corresponding to the fine processing pattern width, and calculating a shift amount of the mask pattern width from a predetermined target pattern width as a correction amount for each predetermined pattern shape. Calculating the ratio of the variation amount of the fine processing pattern width to the variation amount of the mask pattern width of the correction table mask as the MEF for each predetermined pattern shape; and using the MEF, a predetermined target pattern width and a fine processing pattern width. Calculating the additional correction amount for each predetermined pattern shape by dividing the deviation amount of By adding this additional correction amount to the correction amount and obtaining the final correction amount for each predetermined pattern shape, the final correction amount is taken into consideration in consideration that the effect of correction has a pattern shape dependency. Since the amount is calculated, a more accurate correction table is created.

According to a third aspect of the present invention, there is provided an apparatus for forming a mask pattern for a correction table, wherein a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process is corrected for a fine processing mask pattern on a rule basis. A correction table mask pattern creating apparatus for creating a correction table to be performed, a test pattern generating unit that generates a test pattern in which mask patterns of different pattern shapes are arranged,
The pattern density of the correction table mask on which the test pattern is drawn and the pattern density of the fine processing mask pattern are calculated, and the pattern density of the correction table mask is finely processed based on the data on the pattern density dependence during etching. A dummy pattern generator that generates a dummy pattern necessary to make the pattern density substantially equal to the pattern density of the mask pattern, and a dummy pattern generated by the dummy pattern generator to the test pattern generated by the test pattern generator. A mask pattern creating section for creating a correction table mask pattern.

Thus, the apparatus for creating a mask pattern for a correction table according to the third aspect has a test pattern generating section for generating a test pattern in which mask patterns having different pattern shapes are arranged.
Calculate the pattern densities of both the correction table mask on which the test pattern is drawn and the actual fine processing mask pattern, and fine-tune the pattern density of the correction table mask based on the data on pattern density dependence during etching. A test pattern that has a dummy pattern generator that generates a dummy pattern necessary to make the pattern density substantially equal to the pattern density of the processing mask pattern, and that the dummy pattern generated by the dummy pattern generator is generated by the test pattern generator. In addition, by creating a correction table mask pattern, it is possible to make the test pattern of the correction table mask have a pattern density substantially equal to the mask pattern of the actual fine processing mask. Sample using various test patterns When forming a pattern by fine processing, to become substantially the same extent as if the process proximity effect consisting optical proximity effect and the loading effect forms the actual fine processing pattern using the fine processing mask pattern,
A correction table mask pattern for creating a more accurate correction table is created.

According to a fourth aspect of the present invention, there is provided a method of forming a mask pattern for a correction table, wherein a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching step is corrected on a rule basis. A method of generating a correction table mask pattern for creating a correction table to be performed, comprising: generating a test pattern in which mask patterns having different pattern shapes are arranged; and a method of generating a correction table mask on which the test pattern is drawn. Calculate the pattern density and the pattern density of the mask pattern for fine processing,
Generating a dummy pattern required to make the pattern density of the correction table mask substantially equal to the pattern density of the fine processing mask pattern based on the data on pattern density dependency during etching; and Creating a correction table mask pattern by adding a pattern.

Thus, in the method of forming a correction table mask pattern according to the fourth aspect, in addition to the step of generating a test pattern in which mask patterns having different pattern shapes are arranged, a correction table in which the test pattern is drawn is provided. The pattern density of the correction table mask and the pattern density of the fine processing mask pattern based on the data on the pattern density dependence at the time of etching. A step of generating a dummy pattern necessary to make the mask patterns substantially equal to each other, and adding the dummy pattern to the test pattern to form a correction table mask pattern, so that the correction table mask test pattern Approximately equal to the mask pattern of the mask for It is possible to have a turn density, and when forming a fine processing pattern for a sample using such a test pattern, a process proximity effect including an optical proximity effect and a loading effect is used for actual fine processing. Since it is almost the same as the case of forming a fine processing pattern using a mask pattern, a correction table mask pattern for creating a more accurate correction table is created.

According to a fifth aspect of the present invention, there is provided an apparatus for forming a fine processing mask pattern for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a rule basis. And a pattern data input unit for inputting predetermined pattern data for creating a fine processing mask pattern, and a measurement result of a fine processing pattern for a sample formed using a predetermined correction table mask. Based on the data, the microfabricated pattern width closest to the predetermined target pattern width and the data of the mask pattern width corresponding to the microfabricated pattern width are obtained, and the deviation amount of the mask pattern width from the target pattern width is calculated for each predetermined pattern shape. Calculated as the correction amount and the mask pattern of the correction table mask The ratio of the variation amount of the fine processing pattern width to the variation amount is calculated as MEF for each predetermined pattern shape, and the deviation amount between the target pattern width and the fine processing pattern width is divided by MEF to obtain a predetermined pattern shape. Calculate the additional correction amount for each, add the additional correction amount to the correction amount,
A final correction amount is obtained for each predetermined pattern shape, a correction table including the final correction amount obtained for each predetermined pattern shape is created, and a correction table data input unit for inputting data of the correction table and a pattern data input unit are provided. A pattern data correction unit that corrects the input predetermined pattern data by biasing the final correction amount input to the correction table data input unit for each predetermined pattern shape, and a pattern data corrected by the pattern data correction unit. A mask pattern creating section for creating a fine mask pattern,
It is characterized by having.

Thus, in the apparatus for forming a mask pattern for fine processing according to claim 5, the pattern data input section for inputting predetermined pattern data for forming the mask pattern for fine processing, A correction table data input unit for inputting data of a correction table including a final correction amount for each predetermined pattern shape created using the correction table creating device; and a correction table for the predetermined pattern data input to the pattern data input unit. A pattern data correction unit that corrects by biasing the final correction amount input to the data input unit for each predetermined pattern shape,
By creating a fine mask pattern based on the pattern data corrected by the pattern data correction unit, the correction is performed with the final correction amount calculated in consideration of the pattern shape dependence of the correction effect. Therefore, a more accurate corrected mask pattern for fine processing is created.

According to a sixth aspect of the present invention, there is provided a method of forming a fine processing mask pattern for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a rule basis. A method for producing, based on a measurement result of a fine processing pattern for a sample formed using a predetermined correction table mask, a fine processing pattern width closest to a predetermined target pattern width and a width corresponding to the fine processing pattern width The data of the mask pattern width is obtained, the shift amount of the mask pattern width from the target pattern width is calculated as a correction amount for each predetermined pattern shape, and the fine processing pattern width with respect to the variation amount of the mask pattern width of the correction table mask is calculated. The ratio of the variation amount is set to ME for each predetermined pattern shape.
F, the amount of deviation between the target pattern width and the fine processing pattern width is divided by the MEF, an additional correction amount is calculated for each predetermined pattern shape, and the additional correction amount is added to the correction amount. A step of obtaining a final correction amount for each pattern shape and creating a correction table including the final correction amount obtained for each predetermined pattern shape; and a step of forming a correction table into predetermined pattern data for creating a micromachining mask pattern. Biasing and correcting the final correction amount for each predetermined pattern shape, and forming a fine processing mask pattern based on the pattern data corrected for each predetermined pattern shape by the final correction amount. ,
It is characterized by having.

Thus, in the method of forming a mask pattern for fine processing according to claim 6, a correction table including a final correction amount for each predetermined pattern shape is formed by using the method of forming a correction table according to claim 2. Creating a correction table and biasing the final correction amount of the correction table to predetermined pattern data for generating a mask pattern for fine processing for each predetermined pattern shape, and correcting the final correction amount. By creating a fine processing mask pattern based on the pattern data corrected for each predetermined pattern shape, the correction is performed by the final correction amount calculated in consideration of the pattern shape dependence of the correction effect. Therefore, a mask pattern for fine processing corrected more accurately is created.

According to a seventh aspect of the present invention, there is provided a method of forming a fine processing pattern using a fine processing mask pattern for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a rule basis. A method of forming a processing pattern, comprising: a microprocessing pattern width closest to a predetermined target pattern width; and a fine processing pattern width based on a measurement result of a microprocessing pattern for a sample formed using a predetermined correction table mask. The data of the mask pattern width corresponding to is obtained, the amount of deviation of the mask pattern width from the target pattern width is calculated as a correction amount for each predetermined pattern shape,
The ratio of the variation of the fine processing pattern width to the variation of the mask pattern width of the correction table mask is calculated as MEF for each predetermined pattern shape, and the deviation between the target pattern width and the fine processing pattern width is divided by MEF. Calculate
An additional correction amount is calculated for each predetermined pattern shape, an additional correction amount is added to the correction amount, a final correction amount is obtained for each predetermined pattern shape, and a correction table including the final correction amount obtained for each predetermined pattern shape The bias is corrected by biasing the final correction amount of the correction table for each predetermined pattern shape to predetermined pattern data for generating a mask pattern for fine processing, and is corrected for each predetermined pattern shape by the final correction amount. Based on the pattern data after, a step of creating a micro-processing mask pattern, and performing an exposure process using the micro-processing mask pattern, forming a resist pattern to which the micro-processing mask pattern is transferred, The underlying processing layer is selectively etched using the resist pattern, and the fine processing pattern consisting of the selectively etched processing layer is formed. And having forming a over emissions, and.

Thus, in the method of forming a fine processing pattern according to claim 7, a step of forming a fine processing mask pattern by using the method of forming a fine processing mask pattern according to claim 5; Based on the processing mask pattern, a step of manufacturing a fine processing mask, and performing an exposure process using the fine processing mask,
Forming a resist pattern to which a mask pattern for microfabrication has been transferred, and selectively etching the underlying layer to be processed using the resist pattern to form a fine pattern comprising the selectively etched layer to be processed. By forming the processing pattern, a fine processing mask pattern corrected more accurately by the final correction amount calculated in consideration of the pattern shape dependence of the correction effect is used, so that a more accurate fine pattern is obtained. A processing pattern is formed.

[0023]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
An embodiment of the present invention will be described. (First Embodiment) A first embodiment of the present invention is intended for fine processing in the case where a gate having a line width of 0.34 μm is assumed to be formed in a process of manufacturing a transistor constituting a DRAM and a logic circuit, for example. Creation of a correction table for correcting the process proximity effect on a mask pattern on a rule basis, creation of a fine patterning mask pattern using this correction table, and formation of a fine pattern using this fine patterning mask pattern It is.

FIG. 1 is a schematic block diagram showing an apparatus for creating a correction table according to this embodiment.
FIG. 3A is a flowchart illustrating a method of creating a correction table using the apparatus for creating a correction table in FIG. 1, and FIG. 3 is a process when forming a sample gate pattern using a mask for a correction table. FIG. 4A is a schematic cross-sectional view showing an object, and FIG. 4A shows a final correction amount obtained by adding an additional correction amount calculated in consideration of MEF to a correction amount calculated based on a measurement result of a gate pattern for a sample. FIG. 5 is a graph showing the result of digitizing the final correction amount.
FIG. 6 is a schematic block diagram showing an apparatus for creating a mask pattern for fine processing for creating a gate mask pattern by inputting data of a correction table created by using the apparatus for creating a correction table shown in FIG. 4 is a graph showing a gate line width of a gate pattern formed by a gate mask pattern created by using a mask pattern creating apparatus. For comparison with the present embodiment, FIG.
FIG. 4B shows a method of creating a conventional correction table, and the graph of FIG. 4B shows a conventional correction amount calculated based on the measurement result of the sample gate pattern and a conventional correction amount. The result of digitizing is shown.

As shown in FIG. 1, in the correction table creating apparatus according to the present embodiment, a predetermined target line is measured based on a measurement result of a sample gate pattern formed using a predetermined correction table mask. A sample measurement data input unit 10 for inputting data of a gate line width A closest to the width T and a gate mask line width B corresponding to the gate line width A for each predetermined pattern shape; And a correction table creating unit 20 that determines a final correction amount c for each predetermined pattern shape based on the data input to the unit and creates a correction table.

Then, the correction table creating unit 20 calculates a deviation amount of the gate mask line width B input from the sample measurement data input unit 10 from the target line width T as a correction amount a for each predetermined pattern shape. A correction amount calculator 21 for calculating a ratio of a variation amount of the gate line width A to a variation amount of the gate mask line width B of the correction table mask, as a MEF for each predetermined pattern shape; The amount of deviation between the predetermined target line width T and the gate line width A input to the measurement data input unit 10 is determined by ME
An additional correction amount calculator 23 that calculates an additional correction amount b for each predetermined pattern shape by dividing by the MEF calculated by the F calculator, and a correction amount a calculated by the correction amount calculator 22.
Correction amount b calculated by the additional correction amount calculation unit 23
And a final correction amount calculating unit 24 for calculating a final correction amount c for each predetermined pattern shape.
And a final correction amount digitizing section 25 for digitizing the final correction amount c calculated in 4 by the minimum grid of the mask drawing apparatus.

Next, a method of creating a correction table using the apparatus for creating a correction table shown in FIG. 1 will be described with reference to FIGS. Here, FIG. 2 shows (a)
FIG. 2 is a flowchart illustrating a method of creating a correction table according to the present embodiment using the correction table creating apparatus shown in FIG. 1, and FIG. FIG. 4 is a flowchart illustrating a method of creating a correction table.

First, using a correction table mask in which test patterns of different pattern shapes using the gate mask line width and the space between patterns as parameters are arranged,
A gate pattern for a sample is formed (Step 1 in FIG. 2A).

At this time, a semiconductor substrate having the same structure as that for actually forming a gate pattern is used as a processing object for manufacturing a sample. For example, as shown in FIG. 3, an a (amorphous; amorphous) -Si film 31 having a thickness of 100 nm and a thickness of 1 is formed on a Si (silicon) substrate 30.
A semiconductor substrate having a laminated structure in which a WSi (tungsten silicide) film 32 of 00 nm is sequentially deposited is used.
A 67 nm-thick BARC (Bottom Anti-
Reflective Coating (bottom anti-reflection coating) film 33 and resist film 34 having a thickness of 400 nm are sequentially applied by spin coating.

Subsequently, with respect to these resist films 34,
After performing a pre-bake at a temperature of 110 ° C. for 90 seconds, an exposure process using a correction table mask is performed. Thereafter, post-exposure baking was performed at a temperature of 100 ° C. for 90 seconds, paddle development was performed for 60 seconds using a 2.38% TMAH developer, and pure water rinse was performed.
Post bake at 0 ° C. for 90 seconds. Thus, a resist pattern composed of the resist film 34 is formed. Subsequently, using the resist pattern as a mask, the BARC film 33, the WSi film 32, and the a-Si film 31 are selectively etched away to form a gate pattern in which the WSi film 32 and the a-Si film 31 are finely processed. I do. After that, the resist pattern composed of the resist film 34 and the BARC film 3
3 is peeled off.

Here, as the BARC film 33,
AR-3 manufactured by Shipley Co., Ltd. was used. As the resist film 34, a chemically amplified resist of TDUR-509HI manufactured by Tokyo Applied Chemical Co., Ltd. was used. In addition, these BARC films 3
ACT8 manufactured by Tokyo Electron Limited was used for coating the resist film 3 and the resist film 34 and developing the resist film 34.

In the exposure processing, NS made by Nikon Corporation is used.
R-S202A was used. Further, the BARC film 33, WS
The etching of the i film 32 and the a-Si film 31 was performed under the conditions shown in the following table.

[Table 1]

Next, the gate line width A of the gate pattern made of the WSi film 32 and the like finely processed in the sample is used.
Is measured, a gate line width A closest to a predetermined target line width T is obtained for each pattern shape using the gate mask line width and the inter-pattern space as parameters, and a gate line width A corresponding to the gate line width A is further determined. The mask mask line width B of the mask is determined, and the measurement data of such a sample is input to the sample measurement data input unit 10 (Step 2 in FIG. 2A).

Next, the sample measurement data input unit 1
0 based on the measurement data input to 0
In the correction amount calculation unit 21 of 0, the difference between the target line width T and the gate line width A closest to the predetermined target line width T measured for each pattern shape using the gate mask line width and the space between patterns as parameters. Correction amount a = biased to the edge of the gate pattern of the microfabrication mask
(BT) / 2 is calculated (Step 3 in FIG. 2A).

Such a sample measurement data input unit 10
, The gate line width A closest to the target line width T, the gate mask line width B of the correction table mask corresponding to the gate line width A, and the correction amount calculation unit 21. The correction amount a is as shown in the following table.

[Table 2]

In this table, since the target line width T of the gate pattern is set to 340 μm, only the inter-pattern space is used as a parameter as the pattern shape. This is the same in each of the tables described below. Further, the correction amount a divides the difference between the gate mask line width B of the correction table mask and the target line width T by 2 because one of both edges of the gate pattern of the micromachining mask is used. This is because the correction amount for biasing is calculated.

Next, based on the measurement data input to the sample measurement data input unit 10, the MEF calculation unit 22 calculates the MEF for each pattern shape using the gate mask line width and the space between patterns as parameters. The results are shown in the following table.

[Table 3]

As described in this table, ME
F denotes the gate mask line width B of the correction table mask corresponding to the gate line width A closest to the target line width T ± 1.
The gate mask line widths B1 and B2 when shifted by 0 μm are measured for each pattern shape, and the difference (B1−B2) is calculated by dividing by the shifted amount of 20 nm.

Next, in the additional correction amount calculating section 23,
The target line width T measured for each pattern shape using the gate mask line width and the inter-pattern space as parameters while taking into account the MEF calculated by the MEF calculation unit 22.
The additional correction amount b is calculated from the difference between the gate line width A and the target line width T which is closest to (step 4 in FIG. 2A).

Next, the additional correction amount b calculated by the additional correction amount calculation unit 23 is added to the correction amount a calculated by the correction amount calculation unit 21, and a final correction amount c = (a + b)
Is calculated (Step 5 in FIG. 2A).

The additional correction amount b and the final correction amount c calculated as described above are as shown in the following table.

[Table 4]

As described in this table, the additional correction amount b is the target line width T and the target line width T
Is divided by 2 in consideration of biasing one of both edges of the gate pattern of the fine processing mask, and further divided by MEF. .

Next, in the final correction amount digitizing section 25, the final correction amount c calculated by the final correction amount calculating section 24 is digitized by the minimum grid of the mask drawing apparatus (step 6 in FIG. 2A). Then, the result is as shown in the graph of FIG. Here, the minimum grid of the mask drawing apparatus that digitizes the final correction amount c is set to 5 μm, and the digitized final correction amount c is simply called a correction amount. For comparison, FIG. 4B also shows a correction amount when the conventional correction table creation method shown in the flowchart of FIG. 2B is used and the result of digitizing the correction amount.

Then, a correction table is created and completed based on the correction amounts shown in the graph of FIG. 4A (step 7 in FIG. 2A). The correction table completed in this way is as shown in the following table (a).
Here, for comparison, a correction table created based on the correction amounts shown in the graph of FIG. 4B is also shown in Table (b).

[Table 5]

Next, an apparatus for forming a mask pattern for fine processing based on the correction table thus prepared will be described with reference to FIG. As shown in FIG. 5, in the apparatus for creating a mask pattern for fine processing according to the present embodiment, a pattern data input unit 41 for inputting predetermined pattern data for creating a mask pattern for fine processing, A correction table data input unit 42 for inputting data of a correction table created by using the correction table creation device shown in
A fine processing mask pattern creation unit 50 that corrects the pattern data input to the pattern data input unit 41 by the data input to the correction table data input unit 42 and creates a fine processing mask pattern based on the corrected pattern data; Is provided.

Then, in the fine processing mask pattern creating section 50, the pattern data input to the pattern data input section 41 is added to the correction table data input section 42.
A pattern data correction unit 51 for biasing and correcting the correction amount input to each of the predetermined pattern shapes, and a mask pattern generation for generating a fine mask pattern based on the pattern data corrected by the pattern data correction unit 51 A part 52 is provided.

Next, a method of forming a fine mask pattern using the fine mask pattern forming apparatus shown in FIG. 5 will be described. First, predetermined pattern data for creating a mask pattern for fine processing is input to the pattern data input unit 41.
, And the data of the correction table prepared by using the correction table generating apparatus shown in FIG. Next, the pattern data correction unit 51 of the micro-processing mask pattern creation unit 50
In the above, the pattern data input to the pattern data input unit 41 is biased by the correction amount for each predetermined pattern shape input to the correction table data input unit 42,
Correct the pattern data. Subsequently, the mask pattern creating unit 52 creates a fine processing mask pattern based on the pattern data corrected by the pattern data correcting unit 51.

Next, a method of forming a fine processing pattern using a gate mask pattern prepared by the apparatus for forming a fine processing mask pattern shown in FIG. 5 will be described with reference to FIG. First, a fine processing mask is prepared based on a gate mask pattern prepared by using the fine processing mask pattern forming apparatus shown in FIG.
Then, using this fine processing mask, a resist such as exposure and paddle development is applied to a semiconductor substrate having the same structure as the sample shown in FIG. 3 under the same conditions as in the case of sample preparation. A BARC film 3 is formed by using the resist pattern as a mask.
3, the WSi film 32 and the a-Si film 31 are selectively etched in order,
3 is peeled off to form a gate pattern made of the finely processed WSi film 32 and the like. Then, when the gate line width of this gate pattern is measured, the result is shown by a solid line in the graph of FIG. For comparison, a gate mask pattern is created based on the pattern data corrected by the correction table created using the conventional creation method shown in the flow chart of FIG. 2B, and the gate mask pattern is used. The measurement results of the gate line width of the formed gate pattern are also shown by broken lines in the figure.

As is apparent from the graph of FIG. 6, in the present embodiment, even if the pattern shape changes (here, the target line width T of the gate pattern is set to 340 nm).
Therefore, only the space between patterns becomes a parameter as a pattern shape), and the variation of the gate line width is within 5 nm, and the variation width is much smaller than that of the conventional case. Has become. That is,
According to the present embodiment, when the WSi film 32 or the like is finely processed to form a gate pattern, a sufficiently accurate gate stably falls within a very small fluctuation width from the target line width regardless of the pattern shape. The line width can be realized.

(Second Embodiment) The second embodiment of the present invention is based on the assumption that a gate having a line width of 0.15 μm is formed in a process of manufacturing a transistor constituting a DRAM and a logic circuit, for example. The present invention relates to the creation of a correction table mask pattern for creating a correction table for correcting the process proximity effect on a fine processing mask pattern on a rule basis.

FIG. 7 is a schematic block diagram showing an apparatus for creating a correction table mask pattern according to the present embodiment, and FIG. 8 (a) uses the apparatus for creating a correction table mask pattern shown in FIG. FIG. 9 is a schematic plan view showing a correction table mask pattern created in FIG.
6A is a graph showing a gate line width of a gate pattern formed by a gate mask pattern corrected based on a correction table created by using the correction table mask pattern of FIG. For comparison with the present embodiment, FIG.
The schematic plan view of (b) shows a conventional correction table mask pattern.

As shown in FIG. 7, in the correction table mask pattern creating apparatus according to the present embodiment, a first pattern data input section for inputting predetermined pattern data for creating a correction table mask pattern. 6
1, a second pattern data input unit 62 for inputting predetermined pattern data for creating a fine processing mask pattern, and selectively etching a processing target using a predetermined mask pattern to form a fine processing pattern. At the time of formation, a data input unit 63 for inputting data on how much the etching depends on the pattern density, and a test pattern of the correction table mask are used for inputting data on the pattern density dependency of the etching. A correction table mask pattern creating section 70 for creating a correction table mask pattern having a pattern density substantially equal to the mask pattern is provided.

In the correction table mask pattern creating section 70, mask patterns having different pattern shapes are arranged based on the pattern data of the correction table mask pattern input to the first pattern data input section 61. A test pattern generating section 71 for generating a test pattern; a first pattern density calculating section 72 for calculating the pattern density of the correction table mask pattern based on the pattern data similarly input to the first pattern data input section 61; , Second pattern data input unit 6
2, a second pattern density calculating unit 73 for calculating the pattern density of the mask pattern for fine processing based on the pattern data input to the second and the correction tables calculated by the first and second pattern density calculating units 72, 73. The pattern densities of the test pattern generated by the test pattern generation unit 71 are compared with the pattern densities of the mask pattern for micro-processing and the mask pattern for micro-processing, based on the data input to the data input unit 63 regarding the pattern density dependence of etching. A dummy pattern generating section 74 for generating a dummy pattern necessary for making the pattern density substantially equal to the actual pattern density of the fine processing mask, and a test pattern generating section 7
1 is provided with a mask pattern creating section 75 for creating a correction table mask pattern by adding the dummy pattern generated in the dummy pattern generating section 74 to the test pattern generated in 1.

Next, a method of forming a correction table mask pattern using the correction table mask pattern forming apparatus of FIG. 7 will be described with reference to FIG. First, in the test pattern generation unit 71 of the correction table mask pattern creation unit 70, test patterns having different gate pattern pattern shapes based on the pattern data of the correction table mask pattern input to the first pattern data input unit 61. That is, test patterns arranged in a matrix for each pattern shape using the gate line width and the inter-pattern space as parameters as shown on the left side of FIG. 8A are generated.

In the first and second pattern density calculation units 72 and 73, the pattern data of the correction table mask pattern and the fine processing mask pattern input to the first and second pattern data input units 61 and 62, respectively. , The pattern densities of the correction table mask pattern and the fine processing mask pattern are calculated. Then, the dummy pattern generation unit 74 compares the pattern densities of the correction table mask pattern and the fine processing mask pattern calculated by the first and second pattern density calculation units 72 and 73, and furthermore determines the pattern density of the etching. FIG. 8 which is necessary to make the pattern density of the test pattern generated in the test pattern generation section 71 substantially equal to the pattern density of the actual micro-processing mask based on the data input to the data input section 63 relating to the performance.
A dummy pattern as shown on the right side of (a) is generated.

Next, the mask pattern creating section 75 adds the dummy pattern generated in the dummy pattern generating section 74 to the test pattern generated in the test pattern generating section 71, as shown in FIG. 8 (a). Create a correction table mask pattern. In a conventional correction table mask pattern,
As shown in FIG. 8B, only test patterns having different gate pattern pattern shapes, that is, test patterns arranged in a matrix for each pattern shape using the gate line width and the inter-pattern space as parameters are formed. In addition, no dummy pattern is formed to make the pattern density of the test pattern substantially equal to the pattern density of the actual fine processing mask.

Next, a sample gate pattern is formed using a correction table mask on which the correction table mask pattern shown in FIG. 8A is drawn, in the same manner as in the first embodiment. A correction amount is calculated from the measured data, and a correction table is created based on the correction amount.

The correction table thus created is as shown in the following table (a). Here, for comparison, a correction table created using the correction table mask on which the test pattern shown in FIG. 8B is drawn is also shown in Table (b).

[Table 6]

Next, based on the correction table thus prepared, a corrected fine processing mask pattern is prepared in the same manner as in the first embodiment, and the corrected fine processing mask pattern is formed. To form a fine processing pattern. When the gate line width of the gate pattern thus formed is measured, the result is shown by a solid line in the graph of FIG. For comparison, a gate mask pattern is created based on pattern data corrected by a correction table created using the conventional correction table mask pattern shown in FIG. 8B, and this gate mask pattern is used. The measurement results of the gate line width of the formed gate pattern are also shown by broken lines in the figure.

As is apparent from the graph of FIG. 9, in the present embodiment, even if the pattern shape changes (here, the target line width T of the gate pattern is set to 150 nm).
Therefore, only the space between patterns becomes a parameter as a pattern shape), the variation of the gate line width is within 1 nm, and the variation width is much smaller than that of the conventional case. It has become something. That is, according to the present embodiment, when a fine gate pattern is formed, a sufficiently accurate gate line width that stably falls within an extremely small fluctuation width from the target line width is realized regardless of the pattern shape. It becomes possible.

[0061]

As described in detail above, an apparatus and method for creating a correction table according to the present invention, an apparatus and method for creating a mask pattern for a correction table, an apparatus and method for creating a mask pattern for fine processing, In addition, it is achieved by a method of forming a fine processing pattern. In other words, according to the correction table creating apparatus of the present invention, the fine processing pattern closest to the predetermined target pattern width is based on the measurement result of the sample fine processing pattern formed using the predetermined correction table mask. A sample measurement data input unit for inputting data of a width and a mask pattern width corresponding to the fine processing pattern width for each predetermined pattern shape,
A correction amount calculating unit for calculating a shift amount of the mask pattern width input from the sample measurement data input unit from the predetermined target pattern width as a correction amount for each predetermined pattern shape, and a correction table mask. A MEF calculator for calculating a ratio of a variation amount of the fine processing pattern width to a variation amount of the mask pattern width as the MEF for each predetermined pattern shape, and a predetermined target pattern width and fine processing using the MEF calculated by the MEF calculation unit. An additional correction amount calculation unit that calculates an additional correction amount for each predetermined pattern shape by dividing the amount of deviation from the pattern width, and calculates the additional correction amount calculated by the additional correction amount calculation unit. By obtaining the final correction amount for each predetermined pattern shape in addition to the correction amount calculated in the section, the effect of correction depends on the pattern shape. Since it is possible to calculate the final correction amount in consideration of a having a can create a more accurate correction table.

Further, according to the method of preparing a correction table according to the second aspect, based on the measurement result of the sample fine processing pattern formed using the predetermined correction table mask, the closest to the predetermined target pattern width is obtained. In addition to a step of obtaining data of the fine processing pattern width and a mask pattern width corresponding to the fine processing pattern width, and calculating a shift amount of the mask pattern width from a predetermined target pattern width as a correction amount for each predetermined pattern shape. Calculating the ratio of the variation amount of the fine processing pattern width to the variation amount of the mask pattern width of the correction table mask as the MEF for each predetermined pattern shape; and using the MEF, a predetermined target pattern width and a fine processing pattern width. Calculating the additional correction amount for each predetermined pattern shape by dividing the deviation amount of By adding the additional correction amount to the correction amount and obtaining the final correction amount for each predetermined pattern shape, the final correction amount is calculated in consideration of the fact that the effect of correction has a pattern shape dependency. Therefore, a more accurate correction table can be created.

According to the third aspect of the present invention, a test pattern is drawn in addition to a test pattern generator for generating a test pattern in which mask patterns having different pattern shapes are arranged. Calculate the pattern density of both the correction table mask and the actual fine processing mask pattern, based on the data on pattern density dependence during etching,
A dummy pattern generator for generating a dummy pattern necessary to make the pattern density of the correction table mask substantially equal to the pattern density of the fine processing mask pattern, and the dummy pattern generated in the dummy pattern generator is tested. By creating a correction table mask pattern in addition to the test pattern generated in the pattern generation unit, the test pattern of the correction table mask has a pattern density substantially equal to the mask pattern of the actual fine processing mask. When forming a microfabrication pattern for a sample using this test pattern, the process proximity effect including the optical proximity effect and the loading effect can be performed using the actual microfabrication mask pattern. About the same as when forming Therefore, it is possible to create a mask pattern correction table to create a more accurate correction table.

According to a fourth aspect of the present invention, in addition to the step of generating a test pattern in which mask patterns having different pattern shapes are arranged, a correction table in which a test pattern is drawn is provided. The pattern density of the correction table mask and the pattern density of the fine processing mask pattern based on the data on the pattern density dependence at the time of etching. A step of generating a dummy pattern necessary to make the mask patterns substantially equal to each other, and adding the dummy pattern to the test pattern to form a correction table mask pattern, so that the correction table mask test pattern Putter that is approximately the same as the mask pattern It becomes possible to have a density, and when forming a fine processing pattern for a sample using this test pattern, a process proximity effect including an optical proximity effect and a loading effect causes an actual fine processing mask pattern to be formed. Since it is almost the same as the case of forming a fine processing pattern by using a mask pattern, it is possible to create a correction table mask pattern for creating a more accurate correction table.

According to a fifth aspect of the present invention, a pattern data input section for inputting predetermined pattern data for producing a fine processing mask pattern is provided. A correction table data input unit for inputting data of a correction table including a final correction amount for each predetermined pattern shape created using the correction table creating device; and a correction table for the predetermined pattern data input to the pattern data input unit. A pattern data correction unit that corrects the final correction amount input to the data input unit by biasing the pattern for each predetermined pattern shape, based on the pattern data corrected by the pattern data correction unit. The final correction amount calculated taking into account the pattern shape dependence of the correction effect Since it is possible to correct I, it can be prepared more accurately corrected microfabricated mask pattern.

Further, according to the method of forming a mask pattern for fine processing according to claim 6, a correction table including a final correction amount for each predetermined pattern shape is formed by using the method of forming a correction table according to claim 2. Creating a correction table and biasing the final correction amount of the correction table to predetermined pattern data for generating a mask pattern for fine processing for each predetermined pattern shape, and correcting the final correction amount. A fine processing mask pattern is created based on the pattern data that has been corrected for each predetermined pattern shape, thereby correcting the pattern with the final correction amount calculated in consideration of the pattern shape dependency of the correction effect. This makes it possible to create a more accurate corrected microprocessing mask pattern.

Further, according to the method of forming a fine processing pattern according to claim 7, a step of forming a fine processing mask pattern using the method of forming a fine processing mask pattern according to claim 5; Producing a fine processing mask based on the processing mask pattern;
Performing an exposure process using the fine processing mask, and forming a resist pattern to which the fine processing mask pattern has been transferred, and selectively etching the underlying layer to be processed using the resist pattern. By forming a fine processing pattern composed of a layer to be processed selectively etched, a fine processing mask corrected more accurately by a final correction amount calculated in consideration of the pattern shape dependence of a correction effect. Since a pattern can be used, a more accurate fine processing pattern can be formed.

[Brief description of the drawings]

FIG. 1 is a schematic block diagram illustrating a correction table creation device according to a first embodiment of the present invention.

FIG. 2A is a flowchart illustrating a method of creating a correction table using the correction table creation device of FIG. 1;
FIG. 3B is a flowchart showing a conventional method of creating a correction table.

FIG. 3 is a schematic cross-sectional view showing a processing target when forming a sample gate pattern using a correction table mask.

FIG. 4A is a diagram illustrating a final correction amount obtained by adding an additional correction amount calculated in consideration of MEF to a correction amount calculated based on a measurement result of a gate pattern for a sample, and digitizing the final correction amount. FIG. 4B is a graph showing a conventional correction amount calculated based on a measurement result of a gate pattern for a sample and a result of digitizing the conventional correction amount.

FIG. 5 is a schematic block diagram showing an apparatus for creating a mask pattern for fine processing for creating a gate mask pattern by inputting data of a correction table created by using the apparatus for creating a correction table of FIG. 1;

6 is a graph showing a gate line width of a gate pattern formed by a gate mask pattern created by using the apparatus for creating a mask pattern for fine processing of FIG. 5;

FIG. 7 is a schematic block diagram showing an apparatus for creating a correction table mask pattern according to a second embodiment of the present invention.

8A is a schematic plan view showing a correction table mask pattern created by using the correction table mask pattern creating apparatus shown in FIG. 7, and FIG. 8B is a schematic view showing a conventional correction table mask pattern. It is a schematic plan view shown.

9 is a graph showing a gate line width of a gate pattern formed by a gate mask pattern corrected based on a correction table created using the correction table mask pattern of FIG. 8A.

[Explanation of symbols]

10 ... Sample measurement data input correction table creation unit,
20... Correction table creation unit, 21... Correction amount calculation unit,
22 MEF calculator, 23 additional correction amount calculator, 2
4 final correction amount calculation unit 25 final correction amount digitizing unit 30 Si substrate 31 a-Si film 32
... WSi film, 33 ... BARC film, 34 ... resist film, 41 ... pattern data input section, 42 ... correction table data input section, 50 ... fine processing mask pattern creation section, 51 ... pattern data correction , A mask pattern creating unit, 61, a first pattern data input unit, 62, a second pattern data input unit, 63, a data input unit relating to the pattern density dependence of etching,
70... Mask pattern creation unit for correction table, 71.
... Test pattern generator 72, first pattern density calculator 73, second pattern density calculator 74
Dummy pattern generation section, 75... Mask pattern creation section.

Claims (7)

[Claims] 1. An apparatus for creating a correction table for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a fine processing mask pattern on a rule basis, comprising: Based on the measurement result of the fine processing pattern for the sample formed using the mask, the data of the fine processing pattern width closest to the predetermined target pattern width and the mask pattern width corresponding to the fine processing pattern width are converted into the predetermined pattern shape. A sample measurement data input unit to be input every time, and a shift amount of the mask pattern width from the target pattern width input to the sample measurement data input unit,
A correction amount calculating unit that calculates a correction amount for each predetermined pattern shape; and increasing a mask error for each predetermined pattern shape by increasing a ratio of a variation amount of the fine processing pattern width to a variation amount of the mask pattern width of the correction table mask. A mask error increase coefficient calculation unit that calculates as a coefficient, and a shift amount between the target pattern width and the fine processing pattern width input to the sample measurement data input unit,
An additional correction amount calculation unit that divides by the mask error increase coefficient calculated by the mask error increase coefficient calculation unit to calculate an additional correction amount for each predetermined pattern shape; and a correction amount calculated by the correction amount calculation unit. A mask pattern correction table creating apparatus, comprising: a final correction amount calculation unit that calculates a final correction amount for each predetermined pattern shape by adding the additional correction amount calculated by the additional correction amount calculation unit. 2. A method for creating a correction table for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and an etching process on a fine processing mask pattern on a rule basis, comprising: Based on the measurement result of the microfabricated pattern for a sample formed using a mask, data of a microfabricated pattern width closest to a predetermined target pattern width and a mask pattern width corresponding to the microfabricated pattern width are obtained. Calculating a deviation amount of the width from the target pattern width as a correction amount for each predetermined pattern shape; anda ratio of a variation amount of the fine processing pattern width to a variation amount of the mask pattern width of the correction table mask, Calculated as mask error increase coefficient for each predetermined pattern shape Calculating the amount of deviation between the target pattern width and the fine processing pattern width by the mask error increase coefficient, and calculating an additional correction amount for each predetermined pattern shape. Obtaining a final correction amount for each predetermined pattern shape by adding an additional correction amount. 3. A mask pattern for a correction table for creating a correction table for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a rule basis. A test pattern generating unit for generating a test pattern in which mask patterns having different pattern shapes are arranged; a pattern density of a correction table mask on which the test pattern is drawn, and a pattern of the fine processing mask pattern A density is calculated, and a dummy pattern necessary for making the pattern density of the correction table mask substantially equal to the pattern density of the fine processing mask pattern is generated based on data on pattern density dependency at the time of etching. Dummy pattern And a mask pattern creation unit that creates a correction table mask pattern by adding a dummy pattern generated by the dummy pattern generation unit to a test pattern generated by the test pattern generation unit. For creating a correction table mask pattern. 4. A correction table mask pattern for creating a correction table for correcting, based on a rule, a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process. Generating a test pattern in which mask patterns having different pattern shapes are arranged; and calculating a pattern density of the correction table mask on which the test pattern is drawn and a pattern density of the fine processing mask pattern. Generating a dummy pattern necessary to make the pattern density of the correction table mask substantially equal to the pattern density of the fine processing mask pattern, based on data on pattern density dependency at the time of etching; The test pattern Generating a correction table mask pattern by adding the dummy pattern to the pattern. 5. An apparatus for creating a fine processing mask pattern for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a rule basis. A pattern data input unit for inputting the predetermined pattern data, and a fine processing pattern width closest to a predetermined target pattern width based on a measurement result of a sample fine processing pattern formed using a predetermined correction table mask. The mask pattern width data corresponding to the fine processing pattern width is obtained, the amount of deviation of the mask pattern width from the target pattern width is calculated as a correction amount for each predetermined pattern shape, and the mask of the correction table mask is calculated. Variation of fine pattern width with respect to variation of pattern width The ratio is calculated as a mask error increase coefficient for each predetermined pattern shape, and a deviation amount between the target pattern width and the fine processing pattern width is divided by the mask error increase coefficient, and is added for each predetermined pattern shape. Calculating a correction amount, adding the additional correction amount to the correction amount, obtaining a final correction amount for each predetermined pattern shape, creating a correction table including the final correction amount obtained for each predetermined pattern shape, A correction table data input unit for inputting data of the correction table, and the predetermined pattern data input to the pattern data input unit, and the final correction amount input to the correction table data input unit for each predetermined pattern shape. A pattern data correcting unit for correcting by biasing, and a fine adjustment based on the pattern data corrected by the pattern data correcting unit. An apparatus for producing a mask pattern for fine processing, comprising: a mask pattern producing section for producing a fine mask pattern. 6. A method for producing a fine processing mask pattern for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a rule basis, wherein a predetermined correction table mask is used. Based on the measurement result of the fine processing pattern for the formed sample, the data of the fine processing pattern width closest to the predetermined target pattern width and the data of the mask pattern width corresponding to the fine processing pattern width are obtained, and the target of the mask pattern width is obtained. The deviation amount from the pattern width is calculated as a correction amount for each predetermined pattern shape, and the ratio of the variation amount of the fine processing pattern width to the variation amount of the mask pattern width of the correction table mask is calculated for each predetermined pattern shape. Calculated as a mask error increase coefficient, the target pattern width and the The amount of deviation from the fine processing pattern width is divided by the mask error increase coefficient, an additional correction amount is calculated for each predetermined pattern shape, and the additional correction amount is added to the correction amount. Calculating a final correction amount, and generating a correction table including the final correction amount obtained for each predetermined pattern shape; and a predetermined pattern data for generating the fine processing mask pattern, Biasing and correcting the final correction amount for each predetermined pattern shape; and forming a fine processing mask pattern based on the pattern data corrected for each predetermined pattern shape by the final correction amount. A method for forming a mask pattern for fine processing, comprising: 7. A method of forming a fine processing pattern using a fine processing mask pattern for correcting a process proximity effect generated when a fine processing pattern is formed by a photolithography and etching process on a rule basis, comprising: a predetermined correction table; Based on the measurement result of the microfabricated pattern for the sample formed using the mask, the data of the microfabricated pattern width closest to the predetermined target pattern width and the data of the mask pattern width corresponding to the microfabricated pattern width are obtained. A deviation amount of the pattern width from the target pattern width is calculated as a correction amount for each predetermined pattern shape, and a ratio of a variation amount of the fine processing pattern width to a variation amount of the mask pattern width of the correction table mask is determined by a predetermined amount. Calculated as a mask error increase coefficient for each pattern shape of The amount of deviation between the set pattern width and the fine processing pattern width is divided by the mask error increase coefficient, an additional correction amount is calculated for each predetermined pattern shape, and the additional correction amount is added to the correction amount. A final correction amount is obtained for each pattern shape, a correction table including the final correction amount obtained for each predetermined pattern shape is created, and the correction pattern is created into predetermined pattern data for creating the fine processing mask pattern. A step of biasing and correcting the final correction amount of the table for each predetermined pattern shape, and creating a fine processing mask pattern based on the pattern data corrected for each predetermined pattern shape by the final correction amount. Performing an exposure process using the fine processing mask pattern to form a resist pattern to which the fine processing mask pattern has been transferred. And a step of selectively etching a base layer to be processed using the resist pattern to form a finely processed pattern composed of the selectively etched layer to be processed. A method for forming a processing pattern.