JP2002299794A - Method of forming via hole and laminated wiring board having via hole - Google Patents

Method of forming via hole and laminated wiring board having via hole

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Publication number
JP2002299794A
JP2002299794A JP2001104423A JP2001104423A JP2002299794A JP 2002299794 A JP2002299794 A JP 2002299794A JP 2001104423 A JP2001104423 A JP 2001104423A JP 2001104423 A JP2001104423 A JP 2001104423A JP 2002299794 A JP2002299794 A JP 2002299794A
Authority
JP
Japan
Prior art keywords
via hole
conductor layer
laser
treatment
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001104423A
Other languages
Japanese (ja)
Inventor
Michimasa Takahashi
通昌 高橋
Koji Miura
浩治 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP2001104423A priority Critical patent/JP2002299794A/en
Publication of JP2002299794A publication Critical patent/JP2002299794A/en
Pending legal-status Critical Current

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  • Laser Beam Processing (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method of forming via holes, which can be worked efficiently by enhancing the laser machining property of a conductor layer after its treatment, and to provide a laminated wiring board having the via hole. SOLUTION: A treatment solution is used, in which concentration of NaOH is increased more than its recommended value to be set at a concentration in a range of 25 to 40 g/l, and chemical treatment is applied to a copper foil. Consequently, the surface of the copper foil, after its treatment displays a needle crystal whose irregularities due to a large crystal are intense, and it has many places whose crystal interval is larger than 9.4 μm for the laser wavelength. As a result, the absorption factor of light is high at 20 to 40%. Consequently, after its treatment, the copper foil and an interlayer insulating layer under it are worked by a laser machining operation with satisfactory working efficiency, and the satisfactory via hole is formed. In this manner, the laser machining property of the conductor layer after its treatment is enhanced, and the conductor layer can be worked with satisfactory efficiency.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は,積層配線板の製造
におけるビアホールの形成に関する。さらに詳細には,
最上層である導体層にあらかじめ窓を形成しておくこと
なく,レーザ照射により導体層およびその下の絶縁層に
一度に穴を開けるビアホールの形成方法およびそうして
形成したビアホールを有する積層配線板に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the formation of via holes in the production of a multilayer wiring board. More specifically,
Method of forming via hole in a conductor layer and an insulating layer thereunder at once by laser irradiation without previously forming a window in the uppermost conductor layer, and laminated wiring board having via hole formed in this way It is about.

【0002】[0002]

【従来の技術】従来から,例えばRCF等を用いて上層
の絶縁層および導体層(この場合は銅箔)を積層し,こ
れらを加工して層間導通構造たるビアホールを形成する
ことが行われている。ここにおいて,銅箔にあらかじめ
窓を設けることなくレーザ照射して銅箔および絶縁層を
加工するいわゆる銅ダイレクト法が用いられる場合があ
る。
2. Description of the Related Art Conventionally, an upper insulating layer and a conductor layer (in this case, a copper foil) are laminated using, for example, RCF or the like, and are processed to form a via hole having an interlayer conduction structure. I have. Here, a so-called copper direct method of processing a copper foil and an insulating layer by irradiating a laser to the copper foil without providing a window in advance may be used.

【0003】[0003]

【発明が解決しようとする課題】しかしながら従来は,
銅箔のレーザによる加工性は必ずしも良好といえるほど
ではなかった。このため,加工不良が生じたり,あるい
は,製造ラインに多大な負荷をかけたりしていた。
However, conventionally,
The workability of the copper foil by laser was not always good. For this reason, processing defects occur or a large load is applied to the production line.

【0004】本発明は,前記した従来の技術によるビア
ホールの形成が有する問題点を解決するためになされた
ものである。すなわちその課題とするところは,導体層
のレーザ加工性を向上させ,効率よく加工できるように
したビアホールの形成方法およびビアホールを有する積
層配線板を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the problems associated with the above-described conventional via hole formation. That is, an object of the present invention is to provide a method of forming a via hole and a laminated wiring board having a via hole, which are capable of improving the laser workability of a conductor layer and enabling efficient processing.

【0005】[0005]

【課題を解決するための手段】この課題の解決を目的と
してなされた本発明に係るビアホールの形成方法では,
絶縁層上の導体層にレーザを照射して導体層およびその
下の絶縁層に穴を開けてビアホールを形成するにあた
り,あらかじめ導体層に対し,NaOH濃度が25〜4
0g/lの範囲内にある処理液を用いた化学処理を施す
のである。あるいは,化学処理の際の処理液のNaOH
濃度を推奨条件より10〜25g/lの範囲内で増加さ
せておくのである。もしくは,その化学処理を,処理後
の導体層の表面の光吸収率が,20〜40%の範囲内と
なる条件で行うのである。このようにすることにより,
レーザ加工が効率よく行われ,良好なビアホールが形成
される。
SUMMARY OF THE INVENTION In order to solve this problem, a method of forming a via hole according to the present invention has been described.
When a via hole is formed by irradiating a laser to the conductor layer on the insulating layer and piercing the conductor layer and the insulating layer therebelow, the NaOH concentration of the conductor layer must be 25 to 4 in advance.
The chemical treatment is performed using a treatment liquid within the range of 0 g / l. Alternatively, NaOH of the processing solution during chemical processing
The concentration is increased within the range of 10 to 25 g / l from the recommended condition. Alternatively, the chemical treatment is performed under the condition that the light absorptivity of the surface of the conductor layer after the treatment is in the range of 20 to 40%. By doing this,
Laser processing is performed efficiently, and good via holes are formed.

【0006】また,本発明に係るレーザ加工によるビア
ホールを有する積層配線板は,ビアホールが形成された
時点での上層導体層の表面が,20〜40%の範囲内の
光(レーザ加工に用いる光と同じ光)の吸収率を有する
処理面であるものである。あるいは,ビアホールが形成
された時点での上層導体層の表面が,結晶間にレーザ波
長以上の間隔がある針状晶で構成されているものであ
る。これらの積層配線板では,ビアホールが形成された
時点での上層導体層が,レーザ加工性のよい表面清浄を
有している。このため,レーザ加工が効率よくなされて
おり,ビアホールが良好に形成されている。
In the laminated wiring board having a via hole formed by laser processing according to the present invention, the surface of the upper conductive layer at the time when the via hole is formed has a light within a range of 20 to 40% (light used for laser processing). This is a treated surface having an absorptance of the same light. Alternatively, the surface of the upper conductor layer at the time when the via hole is formed is made of a needle-like crystal having an interval of a laser wavelength or more between crystals. In these laminated wiring boards, the upper conductor layer at the time when the via hole is formed has a surface cleaning with good laser workability. For this reason, laser processing is performed efficiently, and via holes are formed favorably.

【0007】[0007]

【発明の実施の形態】以下,本発明を具体化した実施の
形態について,添付図面を参照しつつ詳細に説明する。
Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

【0008】本実施の形態で対象とするのは,図1の左
側に示すような積層配線板である。これを,レーザビー
ムを用いて銅ダイレクト法により,図1の右側に示すよ
うに銅箔1および層間絶縁層2を加工して,内層銅層3
を部分的に露出させる。なお,図1中の銅箔1および層
間絶縁層2は,一般的には,樹脂付き銅箔として提供さ
れているものを,パターニング済みの内層銅層3上に積
層して形成されたものである。銅箔1の表面にはあらか
じめ,化学処理を施しておく。なお,図1の右側の状態
とした後,めっき工程を経て銅箔1と内層銅層3との間
の層間導通構造たるビアホールが形成される。
The object of this embodiment is a laminated wiring board as shown on the left side of FIG. The copper foil 1 and the interlayer insulating layer 2 are processed by a copper direct method using a laser beam as shown on the right side of FIG.
Is partially exposed. The copper foil 1 and the interlayer insulating layer 2 in FIG. 1 are generally formed by laminating a copper foil provided with a resin on a patterned inner copper layer 3. is there. The surface of the copper foil 1 is previously subjected to a chemical treatment. After the state shown on the right side of FIG. 1 is reached, via holes are formed through the plating step as an interlayer conduction structure between the copper foil 1 and the inner copper layer 3.

【0009】銅箔1の表面にあらかじめ施す化学処理
は,処理剤として提供されているものであって,NaO
Hを主成分とするものを用いて行う。ただし,処理液中
のNaOH濃度を,推奨値(上記のものでは15g/
l)より上げておく。これにより銅箔1の表面は,図2
の走査型電子顕微鏡写真に示すように,凹凸の激しい針
状晶を呈することとなる。写真中,明るく見える箇所が
凸部(大部分はCuOの結晶)で,暗く見える箇所が凹
部である。肉眼では全体が黒色に見える。図2は,Na
OH濃度31.3g/lの処理液で化学処理した銅箔1の
表面である。このものでは,結晶と結晶との間隔が,レ
ーザ波長である9.4μm(CO2レーザ)より大きい箇
所が非常に多く見受けられる。
The chemical treatment previously applied to the surface of the copper foil 1 is provided as a treating agent,
This is performed using a material containing H as a main component. However, the NaOH concentration in the processing solution was adjusted to the recommended value (15 g /
l) As a result, the surface of the copper foil 1 is
As shown in the scanning electron micrograph of (1), needle-like crystals with severe irregularities are exhibited. In the photograph, bright portions are convex portions (mostly CuO crystals), and dark portions are concave portions. The whole looks black to the naked eye. FIG.
This is the surface of the copper foil 1 chemically treated with a treatment liquid having an OH concentration of 31.3 g / l. In this case, there are very many places where the distance between the crystals is larger than the laser wavelength of 9.4 μm (CO 2 laser).

【0010】これに対し,推奨値とあまり変わらないN
aOH濃度18.0g/lの処理液で化学処理した銅箔1
の表面は,図3に示すように,同じく針状晶ではあるも
のの,図2のものと比較して結晶サイズがはるかに小さ
い。結晶間隔がレーザ波長である9.4μmより大きい
箇所は全く見られない。高さ方向の凹凸に関しても,図
3のものは図2のものよりはるかに小さいと考えられ
る。
On the other hand, N which is not much different from the recommended value
Copper foil 1 chemically treated with a treatment solution having an aOH concentration of 18.0 g / l
As shown in FIG. 3, although the surface is also acicular, the crystal size is much smaller than that of FIG. No portion where the crystal spacing is larger than the laser wavelength of 9.4 μm is not seen at all. Regarding the unevenness in the height direction, it is considered that FIG. 3 is much smaller than that of FIG.

【0011】さらに,これら2つは,光の吸収率につい
ても明確な違いを示した。すなわち,図2のものは吸収
率約33%で,図3のものの吸収率約10%よりはるか
に高い吸収率を示した。なお,光の吸収率の測定は,図
4に示すようにして,反射光(CO2 レーザ光)の強度
を入射光の強度で割って反射率を算出し,これを100
%から差し引くことにより行った。
[0011] Further, these two showed a clear difference in the light absorptivity. That is, the absorption rate of FIG. 2 was about 33%, which was much higher than the absorption rate of about 10% of FIG. As shown in FIG. 4, the measurement of the light absorptance was performed by dividing the intensity of the reflected light (CO 2 laser light) by the intensity of the incident light to calculate the reflectivity.
Performed by subtracting from%.

【0012】さらに,様々なNaOH濃度の処理液で化
学処理した各試料について,レーザ加工後におけるビア
径を測定したところ,図5のグラフに示す結果が得られ
た。これを見ると,NaOH濃度25g/l以上では良
好な結果が得られているが,それ以下のNaOH濃度で
は穴開け性があまりよくない結果となっている。これ
は,NaOH濃度25g/l未満では,処理面の光反射
率が高いため,加工の効率が悪いためであると考えられ
る。なお,図5の範囲外となるが,NaOH濃度が40
g/lを超えた場合にもやはり結果は不良であった。
Further, when the via diameter after laser processing was measured for each sample chemically treated with treatment solutions having various NaOH concentrations, the results shown in the graph of FIG. 5 were obtained. It can be seen from the graph that good results were obtained at a NaOH concentration of 25 g / l or more, but poor results were obtained at lower NaOH concentrations. It is considered that this is because when the NaOH concentration is less than 25 g / l, the light reflectance of the treated surface is high and the processing efficiency is poor. Although it is out of the range of FIG.
Again, the results were poor when g / l was exceeded.

【0013】[0013]

【表1】 [Table 1]

【0014】また,様々なNaOH濃度の処理液で化学
処理した各試料について,光の吸収率(図4参照)を測
定したところ,表1に示す結果が得られた。これと図5
のグラフとを対比してみると,処理面の光の吸収率が2
0〜40%の範囲内にある場合に,レーザ加工性がよい
ことがわかる。その理由は,光の吸収率が低い場合に
は,照射したレーザ光の大部分が反射されてしまい,有
効に加工に使われないためであると考えられる。なお,
表1に示した光の吸収率の各数値は,NaOH濃度ごと
の測定値の平均値である。
Further, the light absorption rate (see FIG. 4) of each sample chemically treated with treatment solutions having various NaOH concentrations was measured, and the results shown in Table 1 were obtained. This and FIG.
In comparison with the graph of FIG.
It can be seen that laser workability is good when it is within the range of 0 to 40%. It is considered that the reason is that when the light absorptivity is low, most of the irradiated laser light is reflected and is not effectively used for processing. In addition,
Each numerical value of the light absorptance shown in Table 1 is an average value of the measured values for each NaOH concentration.

【0015】以上詳細に説明したように本実施の形態で
は,NaOH濃度をその推奨値より上げ,25〜40g
/lの範囲内の濃度とした処理液を用いて銅箔1に化学
処理を施すこととしている。このため,処理後における
銅箔1の表面は,大きめの結晶による凹凸の激しい針状
晶を呈しており,結晶間隔がレーザ波長である9.4μ
mより大きい箇所を多く有している。このため光の吸収
率が20〜40%と高い。したがって,化学処理後に,
レーザ加工によりその銅箔1およびその下の層間絶縁層
2を加工する際の加工効率がよく,良好なビアホールが
形成されるのである。このようにして,化学処理後にお
ける導体層のレーザ加工性を向上させ,効率よく加工で
きるようにしたビアホールの形成方法およびビアホール
を有する積層配線板が実現されている。
As described above in detail, in the present embodiment, the NaOH concentration is increased from its recommended value to 25 to 40 g.
The copper foil 1 is subjected to a chemical treatment using a treatment solution having a concentration within the range of / l. For this reason, the surface of the copper foil 1 after the treatment exhibits acicular crystals with large irregularities due to large crystals, and the crystal spacing is 9.4 μm, which is the laser wavelength.
It has many places larger than m. Therefore, the light absorptance is as high as 20 to 40%. Therefore, after chemical treatment,
When the copper foil 1 and the interlayer insulating layer 2 thereunder are processed by laser processing, the processing efficiency is good, and a good via hole is formed. In this manner, a via hole forming method and a laminated wiring board having via holes, which are capable of improving the laser workability of the conductor layer after the chemical treatment and enabling efficient processing, have been realized.

【0016】この方法を用いることにより,例えば次の
ようなことも可能である。すなわち,図6に示すよう
な,導体層11,12,13,14を有する4層配線板
を考える。各導体層11〜14には,それぞれ,外側の
面に本実施の形態で説明した化学処理が施されているこ
ととする。すると,図6中矢印の箇所にレーザビームを
照射することにより,導体層11,12および絶縁層2
1,22の破線部分を一度に加工することができる。こ
れにより,導体層11〜13の3層を接続するビアホー
ルが形成できるのである。
By using this method, for example, the following is also possible. That is, consider a four-layer wiring board having conductor layers 11, 12, 13, and 14 as shown in FIG. It is assumed that the outer surfaces of the conductor layers 11 to 14 are respectively subjected to the chemical treatment described in the present embodiment. Then, by irradiating a laser beam to a position indicated by an arrow in FIG.
The broken line portions 1 and 22 can be processed at once. Thereby, via holes connecting the three layers of the conductor layers 11 to 13 can be formed.

【0017】なお,本実施の形態は単なる例示にすぎ
ず,本発明を何ら限定するものではない。したがって本
発明は当然に,その要旨を逸脱しない範囲内で種々の改
良,変形が可能である。
The present embodiment is merely an example, and does not limit the present invention. Therefore, naturally, the present invention can be variously modified and modified without departing from the gist thereof.

【0018】[0018]

【発明の効果】以上の説明から明らかなように本発明に
よれば,化学処理後における導体層のレーザ加工性を向
上させ,効率よく加工できるようにしたビアホールの形
成方法およびビアホールを有する積層配線板が提供され
ている。
As is apparent from the above description, according to the present invention, a method of forming a via hole which improves the laser workability of a conductor layer after chemical treatment and enables efficient processing, and a laminated wiring having a via hole are provided. A board is provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】加工前後における積層配線板の構造を示す断面
図である。
FIG. 1 is a cross-sectional view showing a structure of a laminated wiring board before and after processing.

【図2】化学処理後の銅箔表面の形状を示す走査型電子
顕微鏡写真である。
FIG. 2 is a scanning electron micrograph showing a shape of a copper foil surface after a chemical treatment.

【図3】比較例におけれる化学処理後の銅箔表面の形状
を示す走査型電子顕微鏡写真である。
FIG. 3 is a scanning electron micrograph showing a shape of a copper foil surface after a chemical treatment in a comparative example.

【図4】化学処理面の光吸収率の測定方法を示す概念図
である。
FIG. 4 is a conceptual diagram illustrating a method for measuring the light absorption rate of a chemically treated surface.

【図5】化学処理時のNaOH濃度と,レーザ加工後の
ビア径との関係を示すグラフである。
FIG. 5 is a graph showing the relationship between the NaOH concentration during chemical processing and the via diameter after laser processing.

【図6】4層配線板に3層間ビアホールを形成する状況
を示す断面図である。
FIG. 6 is a cross-sectional view showing a state in which a three-layer via hole is formed in a four-layer wiring board.

【符号の説明】 1 銅箔 2 層間絶縁層[Description of Signs] 1 Copper foil 2 Interlayer insulating layer

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4E068 AF01 CF01 CF03 DA11 DB14 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 4E068 AF01 CF01 CF03 DA11 DB14

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 絶縁層上の導体層に化学処理を施しさら
にレーザを照射して前記導体層およびその下の前記絶縁
層に穴を開けるビアホールの形成方法において,前記化
学処理を,NaOH濃度が25〜40g/lの範囲内に
ある処理液を用いて行うことを特徴とするビアホールの
形成方法。
In a method of forming a via hole for performing a chemical treatment on a conductor layer on an insulating layer and further irradiating a laser to irradiate a laser on the conductor layer and the insulating layer thereunder, the chemical treatment is performed when the NaOH concentration is reduced. A method for forming a via hole, wherein the method is performed using a processing solution within a range of 25 to 40 g / l.
【請求項2】 絶縁層上の導体層に化学処理を施しさら
にレーザを照射して前記導体層およびその下の前記絶縁
層に穴を開けるビアホールの形成方法において,前記化
学処理の際,処理液のNaOH濃度を推奨条件より10
〜25g/lの範囲内で増加させておくことを特徴とす
るビアホールの形成方法。
2. A method for forming a via hole in which a conductor layer on an insulating layer is subjected to a chemical treatment and a laser is irradiated to form a hole in the conductor layer and the insulating layer therebelow. NaOH concentration of 10
A method for forming a via hole, wherein the amount of the via hole is increased within a range of 25 g / l.
【請求項3】 絶縁層上の導体層に化学処理を施しさら
にレーザを照射して前記導体層およびその下の前記絶縁
層に穴を開けるビアホールの形成方法において,前記化
学処理を,処理後の前記導体層の表面の光吸収率が,2
0〜40%の範囲内となる条件で行うことを特徴とする
ビアホールの形成方法。
3. A method of forming a via hole for performing a chemical treatment on a conductor layer on an insulating layer and irradiating a laser to irradiate a laser on the conductor layer and the insulating layer thereunder, wherein the chemical treatment is performed after the treatment. The light absorptance of the surface of the conductor layer is 2
A method for forming a via hole, wherein the method is performed under conditions that fall within a range of 0 to 40%.
【請求項4】 レーザ加工によるビアホールを有する積
層配線板において,前記ビアホールが形成された時点で
の上層導体層の表面が,20〜40%の範囲内の光の吸
収率を有する処理面であることを特徴とするビアホール
を有する積層配線板。
4. In a laminated wiring board having via holes formed by laser processing, the surface of the upper conductor layer at the time when the via holes are formed is a treated surface having a light absorptance in the range of 20 to 40%. A laminated wiring board having via holes.
【請求項5】 レーザ加工によるビアホールを有する積
層配線板において,前記ビアホールが形成された時点で
の上層導体層の表面が,結晶間にレーザ波長以上の間隔
がある針状晶で構成されていることを特徴とするビアホ
ールを有する積層配線板。
5. In a multilayer wiring board having via holes formed by laser processing, the surface of the upper conductor layer at the time when the via holes are formed is formed of needle-like crystals having a spacing of a laser wavelength or more between crystals. A laminated wiring board having via holes.
JP2001104423A 2001-04-03 2001-04-03 Method of forming via hole and laminated wiring board having via hole Pending JP2002299794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001104423A JP2002299794A (en) 2001-04-03 2001-04-03 Method of forming via hole and laminated wiring board having via hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001104423A JP2002299794A (en) 2001-04-03 2001-04-03 Method of forming via hole and laminated wiring board having via hole

Publications (1)

Publication Number Publication Date
JP2002299794A true JP2002299794A (en) 2002-10-11

Family

ID=18957282

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129193A (en) * 2005-10-06 2007-05-24 Mec Kk Method of manufacturing printed wiring board
JP2008288434A (en) * 2007-05-18 2008-11-27 Nippon Mektron Ltd Method for manufacturing multilayer printed wiring board and wiring board thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199596A (en) * 1984-10-22 1986-05-17 Hitachi Ltd Boring method of circuit board
JPH04356993A (en) * 1991-05-28 1992-12-10 Hitachi Seiko Ltd Manufacture of printed circuit board
JPH09219588A (en) * 1996-02-13 1997-08-19 Toppan Printing Co Ltd Printed-wiring board and its manufacturing method
JPH09266381A (en) * 1996-03-28 1997-10-07 Matsushita Electric Works Ltd Printed interconnection board manufacturing method
JPH10178253A (en) * 1996-12-17 1998-06-30 Santa Keikinzoku Kogyo Kk Laminated body for wiring board and its manufacture
JPH10190234A (en) * 1996-12-26 1998-07-21 Nippon Carbide Ind Co Inc Manufacture of multilayer interconnection board
JPH1187915A (en) * 1997-09-09 1999-03-30 Ibiden Co Ltd Manufacture of multilayered printed circuit board
JP2001044642A (en) * 1999-07-26 2001-02-16 Ibiden Co Ltd Manufacture of wiring board
JP2001068816A (en) * 1999-08-24 2001-03-16 Mitsui Mining & Smelting Co Ltd Copper plated laminated board and laser processing method used therefor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199596A (en) * 1984-10-22 1986-05-17 Hitachi Ltd Boring method of circuit board
JPH04356993A (en) * 1991-05-28 1992-12-10 Hitachi Seiko Ltd Manufacture of printed circuit board
JPH09219588A (en) * 1996-02-13 1997-08-19 Toppan Printing Co Ltd Printed-wiring board and its manufacturing method
JPH09266381A (en) * 1996-03-28 1997-10-07 Matsushita Electric Works Ltd Printed interconnection board manufacturing method
JPH10178253A (en) * 1996-12-17 1998-06-30 Santa Keikinzoku Kogyo Kk Laminated body for wiring board and its manufacture
JPH10190234A (en) * 1996-12-26 1998-07-21 Nippon Carbide Ind Co Inc Manufacture of multilayer interconnection board
JPH1187915A (en) * 1997-09-09 1999-03-30 Ibiden Co Ltd Manufacture of multilayered printed circuit board
JP2001044642A (en) * 1999-07-26 2001-02-16 Ibiden Co Ltd Manufacture of wiring board
JP2001068816A (en) * 1999-08-24 2001-03-16 Mitsui Mining & Smelting Co Ltd Copper plated laminated board and laser processing method used therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129193A (en) * 2005-10-06 2007-05-24 Mec Kk Method of manufacturing printed wiring board
JP2008288434A (en) * 2007-05-18 2008-11-27 Nippon Mektron Ltd Method for manufacturing multilayer printed wiring board and wiring board thereof

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