JP2002299425A - Plasma treatment apparatus - Google Patents
Plasma treatment apparatusInfo
- Publication number
- JP2002299425A JP2002299425A JP2001094740A JP2001094740A JP2002299425A JP 2002299425 A JP2002299425 A JP 2002299425A JP 2001094740 A JP2001094740 A JP 2001094740A JP 2001094740 A JP2001094740 A JP 2001094740A JP 2002299425 A JP2002299425 A JP 2002299425A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- insulating
- electrode
- plasma processing
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、プラズマ成膜装
置やプラズマエッチング装置などのプラズマ処理装置
（プラズマリアクタ）に関し、ＩＣ（半導体デバイス）
やＬＣＤ（液晶表示パネル）あるいはＰＤＰ（プラズマ
ディスプレイパネル）などの製造工程においてウエハや
パネル等を処理対象としてプラズマ処理すなわちプラズ
マ反応に基づく処理を行わせるのに好適なプラズマ処理
装置に関する。。The present invention relates to a plasma processing apparatus (plasma reactor) such as a plasma film forming apparatus and a plasma etching apparatus, and relates to an IC (semiconductor device).
The present invention relates to a plasma processing apparatus suitable for performing a plasma process, that is, a process based on a plasma reaction, on a wafer, a panel, or the like in a manufacturing process of a liquid crystal display (LCD) or a liquid crystal display panel (PDP). .
【０００２】真空チャンバ内でプラズマ雰囲気に被処理
物を曝して行われるプラズマ処理として、エッチング
や，アッシング，プラズマＣＶＤなどが挙げられる。そ
して、これらの処理に用いられるプラズマ処理装置の典
型例としては、対向電極となる一対の平行平板を設けて
おいてこれらの平行平板間にプラズマ処理空間を形成し
てシリコンウエハ等の被処理物にエッチング処理を行う
いわゆる平行平板形エッチャー（ＲＩＥ）や成膜処理を
行う平行平板形ＰＣＶＤ等が知られている。[0002] Examples of plasma processing performed by exposing an object to be processed to a plasma atmosphere in a vacuum chamber include etching, ashing, and plasma CVD. As a typical example of a plasma processing apparatus used for these processes, a pair of parallel flat plates serving as counter electrodes is provided, and a plasma processing space is formed between these parallel flat plates to process an object to be processed such as a silicon wafer. A so-called parallel plate type etcher (RIE) for performing an etching process and a parallel plate type PCVD for performing a film forming process are known.
【０００３】図３（ａ）に装置全体の概要構成について
の縦断模式図を示したが、平行平板形のプラズマ処理装
置は、一対の平行平板が真空チャンバ内に設けられてい
て、両平板間に形成されたプラズマ処理空間にプラズマ
を発生させ又は導入するとともにそのプラズマ処理空間
内に所定の処理ガス等も導入する。そして、プラズマ処
理空間にてプラズマ反応を行わせ、これによってプラズ
マ処理空間内の被処理物表面に対してエッチング処理等
を施すようになっている。FIG. 3 (a) shows a schematic vertical sectional view of a schematic configuration of the entire apparatus. In a parallel plate type plasma processing apparatus, a pair of parallel flat plates is provided in a vacuum chamber, and between the two flat plates. A plasma is generated or introduced into the plasma processing space formed at the same time, and a predetermined processing gas or the like is also introduced into the plasma processing space. Then, a plasma reaction is performed in the plasma processing space, whereby an etching process or the like is performed on the surface of the workpiece in the plasma processing space.
【０００４】エッチャーを例に詳述すると、この装置
は、真空チャンバ本体部２の上に真空チャンバ蓋部３が
開閉可能に取着された真空チャンバを備えており、プラ
ズマ処理の対象物であるウエハ１（被処理物）が平板状
をしていることから、水平に置かれたカソード部４０
（被処理物を保持する電極）が真空チャンバ本体部２内
のほぼ中央に設けられ、このカソード部４０の上面が平
坦に形成されていて、ウエハ１を乗載しておくことが可
能なようになっている。真空チャンバ本体部２の内底中
央には筒状のローアーサポート４０ａが貫通して立設さ
れており、カソード部４０はこのローアーサポート４０
ａの上端に固着して支持されている。In detail, taking an etcher as an example, this apparatus includes a vacuum chamber in which a vacuum chamber lid 3 is openably and closably mounted on a vacuum chamber main body 2 and is an object of plasma processing. Since the wafer 1 (object to be processed) has a flat plate shape, the cathode portion 40 placed horizontally
(Electrode for holding an object to be processed) is provided at substantially the center in the vacuum chamber main body 2, and the upper surface of the cathode section 40 is formed flat so that the wafer 1 can be mounted thereon. It has become. At the center of the inner bottom of the vacuum chamber main body 2, a cylindrical lower support 40a penetrates and stands upright.
a and is fixedly supported at the upper end of a.
【０００５】真空チャンバ蓋部３内のほぼ中央であって
カソード部４０の上方にはアノード部１１が筒状のアッ
パーサポート１１ａによって真空チャンバ蓋部３に垂設
されており、アノード部１１とカソード部４０とを互い
に対向した電極としてＲＦ電源３１によって４００ｋＨ
ｚ〜１３．５６ＭＨｚ程度かそれより高い高周波が印加
されると所定の真空圧の下でアノード部１１とカソード
部４０との間にプラズマが発生する。そこに、所定の処
理ガスＡがアノード部１１等を介して供給されるとカソ
ード部４０上面に載置されたウエハ１にガス状態等に応
じたプラズマ処理がなされる。これにより、アノード部
１１の下面とカソード部４０の上面との間にプラズマ処
理空間１３が形成され、そこに置かれたウエハ１の表面
に対してプラズマ処理が施されるようになっている。An anode 11 is suspended from the vacuum chamber lid 3 by a cylindrical upper support 11a substantially at the center of the vacuum chamber lid 3 and above the cathode section 40. The part 40 and the electrode facing each other are set to 400 kHz by the RF power source 31.
When a high frequency of about z to 13.56 MHz or higher is applied, plasma is generated between the anode section 11 and the cathode section 40 under a predetermined vacuum pressure. When a predetermined processing gas A is supplied through the anode unit 11 or the like, the plasma processing according to the gas state or the like is performed on the wafer 1 mounted on the upper surface of the cathode unit 40. As a result, a plasma processing space 13 is formed between the lower surface of the anode unit 11 and the upper surface of the cathode unit 40, and the plasma processing is performed on the surface of the wafer 1 placed therein.
【０００６】真空チャンバ本体部２には真空チャンバ内
ガスを吸い出して適度な真空度を保つために内外貫通し
た排気口・吸引口２ａが加工形成され、この吸引口２ａ
に対し順にゲートバルブ４ａ、可変バルブ４、真空ポン
プ５が連結されている。ゲートバルブ４ａは保守時等に
仕切るための手動弁であり通常動作時には開状態にされ
る。これとターボポンプ等の真空ポンプ５とに介挿され
た可変バルブ４は、バルブ開度を可変駆動するモータ等
が付設されていてこれを電気信号で制御することで遠隔
制御可能な通過流体の可変絞りとして機能する。そし
て、図示しない適宜のＰＩＤ制御回路等の制御に従って
可変バルブ４による絞り量が可変駆動されることで、真
空チャンバ内の真空圧がプラズマ処理に適した設定圧力
になるように自動制御される。The vacuum chamber main body 2 is formed with an exhaust port / suction port 2a which penetrates inside and outside to suck out gas in the vacuum chamber and maintain an appropriate degree of vacuum.
The gate valve 4a, the variable valve 4, and the vacuum pump 5 are connected in this order. The gate valve 4a is a manual valve for partitioning during maintenance or the like, and is opened during normal operation. The variable valve 4 interposed between the pump and a vacuum pump 5 such as a turbo pump is provided with a motor or the like for variably driving the valve opening degree. Functions as a variable aperture. Then, the throttle amount is variably driven by the variable valve 4 under the control of an appropriate PID control circuit or the like (not shown), so that the vacuum pressure in the vacuum chamber is automatically controlled to a set pressure suitable for plasma processing.
【０００７】このような処理に際しては、均一な処理結
果を得るために、プラズマ処理空間１３の真空圧だけで
なく、ウエハ１の温度や電位なども適宜の設定値に維持
する必要がある。そこで、真空チャンバ内のプラズマ処
理空間等に設置される電極の表面のうち被処理物が乗載
されるところに、すなわち図３の例で言えばカソード部
４０の上面に、ウエハ１をカソード部４０側へ静電引力
によって引きつける静電チャック５０が、薄く広がった
膜状に設けられる（図３（ｂ）参照）。In such a process, not only the vacuum pressure in the plasma processing space 13 but also the temperature and potential of the wafer 1 need to be maintained at appropriate set values in order to obtain a uniform processing result. Therefore, the wafer 1 is placed on the surface of the electrode installed in the plasma processing space or the like in the vacuum chamber where the object to be processed is mounted, that is, on the upper surface of the cathode section 40 in the example of FIG. An electrostatic chuck 50 that is attracted to the side by electrostatic attraction is provided in a thin and spread film shape (see FIG. 3B).
【０００８】また、カソード部４０の主体はアルミニウ
ム等で形成された電極導体４１であるが、これは良導体
であるうえ高周波が印加されているのでプラズマに直接
曝されると異常放電が発生することから、電極導体４１
の底面および側面は石英等の絶縁カバー部４２で囲わ
れ、その絶縁カバー部４２の外面はアルミニウム等のシ
ールドカバー４３で覆われる（図３（ｂ）参照）。さら
に、電極導体４１の上面のうち静電チャック５０から食
み出たところ、即ち静電チャック５０の周りを囲むとこ
ろにも、石英等の絶縁リング４４（絶縁部材）が設けら
れる。The cathode portion 40 is mainly composed of an electrode conductor 41 made of aluminum or the like. Since this is a good conductor and a high frequency is applied, an abnormal discharge occurs when the electrode portion is directly exposed to plasma. From the electrode conductor 41
Is covered with an insulating cover portion 42 made of quartz or the like, and the outer surface of the insulating cover portion 42 is covered with a shield cover 43 made of aluminum or the like (see FIG. 3B). Further, an insulating ring 44 (insulating member) made of quartz or the like is provided on a portion of the upper surface of the electrode conductor 41 protruding from the electrostatic chuck 50, that is, a portion surrounding the electrostatic chuck 50.
【０００９】そして、ウエハ１が図示しないゲート等を
介してカソード部４０の上に搬入され、また真空引きが
なされるとともに、静電チャック５０が、絶縁性給電孔
５１ｂにて絶縁されて電極導体４１を貫通する給電線５
１ａを介して外部のバイアス電源５１から、静電引力の
源となる直流高電圧を印加される。そうすると、ウエハ
１はカソード部４０に密着して保持される。さらに、プ
ラズマ処理空間１３にプラズマが形成されるとともに、
シールドカバー４３が接地され、電極導体４１が給電線
３１ａを介してＲＦ電源３１から高周波を印加される
と、ウエハ１にプラズマが作用する際に、ウエハ１の上
面に対してほぼ一様に作用する。Then, the wafer 1 is loaded onto the cathode section 40 through a gate or the like (not shown), evacuated, and the electrostatic chuck 50 is insulated by the insulative power supply hole 51b so that the electrode conductor Feeding line 5 passing through 41
A high DC voltage serving as a source of electrostatic attraction is applied from an external bias power supply 51 via 1a. Then, the wafer 1 is held in close contact with the cathode section 40. Furthermore, while plasma is formed in the plasma processing space 13,
When the shield cover 43 is grounded and the electrode conductor 41 is applied with a high frequency from the RF power source 31 via the power supply line 31a, when the plasma acts on the wafer 1, it acts almost uniformly on the upper surface of the wafer 1. I do.
【００１０】[0010]
【従来の技術】このようなプラズマ処理装置、すなわ
ち、プラズマ空間１３を囲う真空チャンバ２，３と、こ
の真空チャンバ内に設置された電極４０と、この電極４
０の表面に設けられた静電チャック５０と、この静電チ
ャックの周囲に設けられた絶縁部材４４とを具備したプ
ラズマ処理装置については、カソード部４０における静
電チャック５０の設け方に着目すると、静電チャック５
０を接着剤でカソード部４０の電極導体４１に接着する
もの（以下、接着式と呼ぶ）や、電極導体（４１）に静
電チャック（５０）を溶射してから研磨して形成するも
の（以下、非接着式と呼ぶ）などが挙げられる。2. Description of the Related Art Such a plasma processing apparatus, that is, vacuum chambers 2 and 3 surrounding a plasma space 13, an electrode 40 installed in the vacuum chamber, and an electrode 4
Regarding the plasma processing apparatus including the electrostatic chuck 50 provided on the surface of the electrostatic chuck 50 and the insulating member 44 provided around the electrostatic chuck, paying attention to the method of providing the electrostatic chuck 50 in the cathode unit 40. , Electrostatic chuck 5
0 is bonded to the electrode conductor 41 of the cathode section 40 with an adhesive (hereinafter, referred to as an adhesive type), or formed by spraying an electrostatic chuck (50) on the electrode conductor (41) and then polishing the electrode conductor (41). Hereinafter, it is referred to as a non-adhesive type).
【００１１】これらのうち非接着式のものは、静電チャ
ック（５０）が、研磨可能な絶縁物だけでできていて、
バイアス電源（５１）からの高電圧の印加される電極導
体（４１）と一体になってウエハ１の保持力を発揮する
ようになっていることから、静電チャック（５０）と絶
縁リング（４４）とを同時に研磨して両者の上面を揃え
ることが可能である。そして、これを利用して、ウエハ
１の辺縁部分を絶縁リング（４４）の表面に直接密着さ
せた状態で静電吸着することで、静電チャック（５０）
がプラズマに曝されないようにすることも提案されてい
る（特開平８−２９３５３９号公報参照）。[0011] Of these, the non-adhesive type has an electrostatic chuck (50) made of only a polished insulator,
The electrostatic chuck (50) and the insulating ring (44) are integrated with the electrode conductor (41) to which a high voltage is applied from the bias power supply (51) to exert the holding power of the wafer 1. ) Can be polished at the same time so that the upper surfaces of both are aligned. By utilizing this, the peripheral portion of the wafer 1 is electrostatically attracted to the surface of the insulating ring (44) in a state of being in direct contact with the surface thereof, thereby forming the electrostatic chuck (50).
It has also been proposed to prevent exposure to plasma (see Japanese Patent Application Laid-Open No. 8-293535).
【００１２】これに対し、接着式のものは、静電チャッ
ク５０が、バイアス電源５１からの高電圧を直接印加さ
れるようになっており（図３（ｂ）参照）、高周波を印
加される電極導体４１を介さないで良いことから、分離
性・制御性等が高いと言えるが、ウエハ１を静電チャッ
ク５０で保持したときにそのウエハ１の辺縁部分が絶縁
リング４４の表面に直接密着するようにはなっていな
い。すなわち、接着式の従来構造は、カソード部４０の
うち辺縁部分（図３（ｂ）におけるＸ部分）の縦断面模
式図を図４に三つ示したが、次のようになっている。な
お、図示に際し、薄い静電チャック５０は、層構造を明
示するために、特に厚みを持たせて図示した。On the other hand, in the adhesive type, the electrostatic chuck 50 is directly applied with a high voltage from the bias power supply 51 (see FIG. 3B), and a high frequency is applied. Since it is not necessary to pass through the electrode conductor 41, it can be said that the separation and controllability are high. However, when the wafer 1 is held by the electrostatic chuck 50, the peripheral portion of the wafer 1 is directly on the surface of the insulating ring 44. It does not adhere. That is, in the conventional structure of the bonding type, three longitudinal cross-sectional schematic views of the peripheral portion (the X portion in FIG. 3B) of the cathode portion 40 are shown in FIG. In the drawing, the thin electrostatic chuck 50 is illustrated with a particular thickness so as to clearly show the layer structure.
【００１３】この静電チャック５０は（図４参照）、銅
箔等の良電導体膜からなる導電層５３を、ポリイミドフ
ィルム等の絶縁性樹脂シートからなる上部絶縁層５２お
よび下部絶縁層５４で上下から挟み、中間接着層５５で
張り合わせたものである。その厚さは数十μｍ〜１５０
μｍ〜数百μｍであるが、その広がりは、直径が数十ｍ
ｍ〜３００ｍｍ〜数百ｍｍの円形や、対角が数十ｃｍの
長方形などに及ぶものである。具体的には、処理対象の
ウエハ１より直径が２〜４ｍｍ程度小さくなるよう、即
ち広さが狭くて外周面が１〜２ｍｍ内寄りになるように
作られる。しかも、導電層５３は、外周面が露出しない
よう、絶縁層５２，５４より更に１〜２ｍｍ小さくなっ
ている。そして、この静電チャック５０は、エポキシ樹
脂等の接着剤からなる下部接着層５６を介在させて電極
導体４１の上面に接着されるとともに、導電層５３に給
電線５１ａが接続されることで、カソード部４０に組み
込まれる。In the electrostatic chuck 50 (see FIG. 4), a conductive layer 53 made of a good conductor film such as a copper foil is formed by an upper insulating layer 52 and a lower insulating layer 54 made of an insulating resin sheet such as a polyimide film. It is sandwiched from above and below and adhered with an intermediate adhesive layer 55. Its thickness is several tens μm to 150
μm to several hundred μm, but the spread is several tens m in diameter.
It ranges from a circle of m to 300 mm to several hundred mm, a rectangle with a diagonal of several tens cm, and the like. Specifically, it is made so that the diameter is smaller by about 2 to 4 mm than the wafer 1 to be processed, that is, the area is narrow and the outer peripheral surface is inward by 1 to 2 mm. In addition, the conductive layer 53 is smaller by 1 to 2 mm than the insulating layers 52 and 54 so that the outer peripheral surface is not exposed. The electrostatic chuck 50 is bonded to the upper surface of the electrode conductor 41 with a lower adhesive layer 56 made of an adhesive such as an epoxy resin interposed therebetween, and the power supply line 51 a is connected to the conductive layer 53. It is incorporated in the cathode section 40.
【００１４】また、電極導体４１は上面の辺縁部分が削
り落とされて、そこには静電チャック５０を囲む角部が
でき、そこに絶縁リング４４が装着されるが、それにも
幾つかの態様が有り、例えば特開２０００−４９１４３
号公報に示すように、首輪を首に掛けるように絶縁リン
グ４４を遊嵌させた単純なものや（図４（ａ）参照）、
静電チャック５０の辺縁部と絶縁リング４４とを絶縁性
接着剤５７で固定的に接着したもの（図４（ｂ）参
照）、絶縁リング４４から分離分割された絶縁リング４
６だけを接着して絶縁リング４４は着脱可能にしたもの
（図４（ｃ）参照）等が知られている。Further, the electrode conductor 41 has its upper edge cut off to form a corner portion surrounding the electrostatic chuck 50, and an insulating ring 44 is attached thereto. There are aspects, for example, JP-A-2000-49143.
As shown in the official gazette, a simple one in which an insulating ring 44 is loosely fitted so as to hang a collar on a neck (see FIG. 4A),
The periphery of the electrostatic chuck 50 and the insulating ring 44 are fixedly adhered with an insulating adhesive 57 (see FIG. 4B), and the insulating ring 4 separated from the insulating ring 44 is divided.
There is a known one in which only 6 is bonded to make the insulating ring 44 detachable (see FIG. 4C).
【００１５】[0015]
【発明が解決しようとする課題】ところで、これらの静
電チャックのうち非接着式のものには、追加工がし易い
等の利点が有るが、絶縁層内に導電層を含ませ難いとい
う制約が有る。一方、非接着式には、中間に導電層を有
する静電チャックでも電極に装着できるという利点が有
るが、研磨等の追加工は遣りづらいため、静電チャック
の辺縁部と絶縁リングとを適合させるのが難しい。その
ため、単に絶縁リング４４を嵌めるのでは（図４（ａ）
参照）、絶縁リング４４と静電チャック５０及び被処理
物１とを密着させられず、その隙間に入り込んだプラズ
マ等によって電極導体４１が損傷を受けてしまう。[0005] Among these electrostatic chucks, the non-adhesive type chucks have the advantage of being easy to perform additional processing, but have the limitation that it is difficult to include a conductive layer in the insulating layer. There is. On the other hand, the non-adhesive type has an advantage that an electrostatic chuck having a conductive layer in the middle can be attached to the electrode, but it is difficult to perform additional processing such as polishing, so that the periphery of the electrostatic chuck and the insulating ring are separated. Difficult to adapt. Therefore, simply fitting the insulating ring 44 (FIG. 4A)
Reference), the insulating ring 44, the electrostatic chuck 50, and the workpiece 1 cannot be brought into close contact with each other, and the electrode conductor 41 is damaged by plasma or the like entering the gap.
【００１６】これに対し、静電チャック５０と絶縁リン
グ４４，４６とを絶縁性接着剤５７で接着したものは
（図４（ａ），（ｂ）参照）、そのような隙間が無いの
で、両者の利点を兼ね備えたものとなっている。さら
に、例示のものでは、絶縁リング４４及び電極導体４１
の外側面まで絶縁テープ４５で覆って電極導体４１の損
傷を防止している。しかしながら、この静電チャック装
着方式にも、未だ解決されていない課題が残っている。On the other hand, the one obtained by bonding the electrostatic chuck 50 and the insulating rings 44 and 46 with the insulating adhesive 57 (see FIGS. 4A and 4B) has no such a gap. It has both advantages. Further, in the illustrated example, the insulating ring 44 and the electrode conductor 41
Is covered with the insulating tape 45 to prevent the electrode conductor 41 from being damaged. However, this electrostatic chuck mounting method still has an unsolved problem.
【００１７】すなわち、異質の部材からなる電極導体や
静電チャックと絶縁リングとでは熱膨張率が相違するう
え、それらの温度がプラズマ処理の繰り返しに伴って激
しく変化するため、長期間使用すると、静電チャックと
絶縁リングとの接着部分が剥がれてしまったり、静電チ
ャックの辺縁部に皺が出来てしまうことがある。そこ
で、導電層を有して制御性等の良い接着式を前提とし
て、静電チャック辺縁部の近傍でも電極導体が露出しな
いように絶縁被覆等を付加するに際し、その絶縁被覆等
の耐久性が増すように更なる工夫を凝らすことが技術的
な課題となる。That is, since the thermal expansion coefficient differs between an electrode conductor or an electrostatic chuck made of a foreign material and an insulating ring and an insulating ring, and their temperatures change drastically with the repetition of plasma processing, when used for a long time, The adhesive portion between the electrostatic chuck and the insulating ring may be peeled off, or wrinkles may be formed on the periphery of the electrostatic chuck. Therefore, assuming a bonding type with a conductive layer and good controllability, when adding an insulation coating etc. so that the electrode conductor is not exposed even near the periphery of the electrostatic chuck, the durability of the insulation coating etc. is added. It is a technical issue to make further efforts to increase the number of entrants.
【００１８】この発明は、このような課題を解決するた
めになされたものであり、静電チャックの接着された電
極でもその絶縁が長期に亘って良いプラズマ処理装置を
実現することを目的とする。The present invention has been made to solve such a problem, and an object of the present invention is to realize a plasma processing apparatus in which even an electrode to which an electrostatic chuck is adhered has good insulation for a long time. .
【００１９】[0019]
【課題を解決するための手段】このような課題を解決す
るために発明された第１乃至第４の解決手段について、
その構成および作用効果を以下に説明する。Means for Solving the Problems First to fourth solving means invented to solve such problems are as follows.
The configuration and operation and effect will be described below.
【００２０】［第１の解決手段］第１の解決手段のプラ
ズマ処理装置は、出願当初の請求項１に記載の如く、プ
ラズマ空間を囲う真空チャンバと、この真空チャンバ内
に設置された電極と、導電層を有し前記電極の表面に接
着して設けられた静電チャックとを具備したプラズマ処
理装置において、前記電極のうち前記静電チャックの辺
縁部と接する部分に、絶縁材料の溶射にて形成された絶
縁部が設けられている、というものである。[First Solution] A plasma processing apparatus according to the first solution is, as described in the first aspect of the present invention, a vacuum chamber surrounding a plasma space, and an electrode installed in the vacuum chamber. A plasma processing apparatus comprising: an electrostatic chuck having a conductive layer and adhered to the surface of the electrode; and spraying an insulating material on a portion of the electrode which is in contact with a peripheral portion of the electrostatic chuck. Is provided.
【００２１】このような第１の解決手段のプラズマ処理
装置にあっては、導電層を有する静電チャックが電極の
表面に接着して設けられているので、接着式の利点であ
る制御性等の良さが引き継がれている。また、少なくと
も静電チャックの辺縁部の近傍には、絶縁部が設けられ
ているので、そこでも電極導体は露出しないようになっ
ている。しかも、その絶縁部が、絶縁材料の溶射によっ
て形成されていることから、強く被着して剥がれ難いう
え、微小粒体の凝集したクラスター状になり易く、その
構造では変形能が一段と高まるので、絶縁部による電極
の絶縁被覆の耐久性が向上する。さらに、静電チャック
と絶縁リングとの適合条件までも緩和される。したがっ
て、この発明によれば、静電チャックの接着された電極
でもその絶縁が長期に亘って良いプラズマ処理装置を実
現することができる。In the plasma processing apparatus according to the first solution, the electrostatic chuck having the conductive layer is provided by bonding to the surface of the electrode. Goodness has been inherited. In addition, since the insulating portion is provided at least near the periphery of the electrostatic chuck, the electrode conductor is not exposed there. Moreover, since the insulating portion is formed by thermal spraying of an insulating material, it is strongly adhered and hardly peeled off, and it is easily formed into clusters of fine particles, and the deformability is further increased in the structure, The durability of the insulating coating of the electrode by the insulating portion is improved. Further, the conditions for matching the electrostatic chuck and the insulating ring are relaxed. Therefore, according to the present invention, it is possible to realize a plasma processing apparatus in which the insulation of the electrode to which the electrostatic chuck is bonded is good over a long period of time.
【００２２】［第２の解決手段］第２の解決手段のプラ
ズマ処理装置は、出願当初の請求項２に記載の如く、上
記の第１の解決手段のプラズマ処理装置であって、前記
電極のうち前記静電チャックの中央部と接する部分では
前記絶縁部の形成が省かれている、というものである。[Second Solution] A plasma processing apparatus according to a second solution is the plasma processing apparatus according to the first solution, wherein the electrode is provided with a plurality of electrodes. Of these, the formation of the insulating portion is omitted in a portion in contact with the central portion of the electrostatic chuck.
【００２３】このような第２の解決手段のプラズマ処理
装置にあっては、溶射面積が少なくなるので、溶射作業
が軽減されるうえ、絶縁材料も節約できることとなる。In the plasma processing apparatus of the second solution, the thermal spraying area is reduced, so that the thermal spraying operation is reduced and the insulating material can be saved.
【００２４】［第３の解決手段］第３の解決手段のプラ
ズマ処理装置は、出願当初の請求項３に記載の如く、上
記の第１，第２の解決手段のプラズマ処理装置であっ
て、前記絶縁部が前記静電チャックから食み出て拡がっ
ている、というものである。[Third Solution] The plasma processing apparatus of the third solution is the plasma processing apparatus of the first and second solutions, as described in claim 3 at the beginning of the application. The insulating portion protrudes from the electrostatic chuck and extends.
【００２５】このような第３の解決手段のプラズマ処理
装置にあっては、静電チャックと絶縁リングとの適合条
件が一層緩和されて、絶縁リングの有無まで任意事項と
なる。In the plasma processing apparatus according to the third solution, the conditions for matching the electrostatic chuck with the insulating ring are further relaxed, and the presence or absence of the insulating ring is optional.
【００２６】［第４の解決手段］第４の解決手段のプラ
ズマ処理装置は、出願当初の請求項４に記載の如く、上
記の第１〜第３の解決手段のプラズマ処理装置であっ
て、前記絶縁材料がアルミナと二酸化珪素と珪素と炭化
珪素とのうち何れか一つからなるものである。[Fourth Solution] The plasma processing apparatus of the fourth solution is the plasma processing apparatus of the first to third solutions as described in claim 4 at the beginning of the application. The insulating material is made of any one of alumina, silicon dioxide, silicon, and silicon carbide.
【００２７】これらの絶縁材料は絶縁性に優れているば
かりかプラズマ耐性も良好なので、耐久性の良い絶縁部
を確実に形成することができる。Since these insulating materials have not only excellent insulating properties but also good plasma resistance, it is possible to reliably form an insulating portion having good durability.
【００２８】[0028]
【発明の実施の形態】このような解決手段で達成された
本発明のプラズマ処理装置について、これを実施するた
めの具体的な形態を、以下の第１，第２施例により説明
する。図１に示した第１実施例は、上述した第１〜第４
の解決手段を総て具現化したものであり、図２に示した
第２実施例は、その変形例である。なお、それらの図示
に際し従来と同様の構成要素には同一の符号を付して示
したので、また、背景の技術の欄で述べたことは以下の
各実施例についても共通するので、重複する再度の説明
は割愛し、以下、従来との相違点を中心に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments for carrying out the plasma processing apparatus of the present invention achieved by the above solution will be described with reference to the following first and second embodiments. The first embodiment shown in FIG.
The second embodiment shown in FIG. 2 is a modification of the second embodiment. In the drawings, the same components as those in the related art are denoted by the same reference numerals, and the description in the section of Background Art is common to each of the following embodiments. The repeated description is omitted, and the following description focuses on the differences from the related art.
【００２９】[0029]
【第１実施例】本発明のプラズマ処理装置の第１実施例
について、その具体的な構成を、図面を引用して説明す
る。図１は、その下部電極（保持部）のうち辺縁部分の
縦断面模式図である。このプラズマ処理装置が既述した
従来例のもの（図４（ａ）〜（ｃ））と相違するのは、
絶縁リング４４及び絶縁性接着剤５７が無くなって、そ
の代わりに溶射絶縁層４７（絶縁部）が導入されている
点である。First Embodiment A first embodiment of the plasma processing apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a schematic vertical cross-sectional view of a peripheral portion of the lower electrode (holding portion). This plasma processing apparatus is different from the above-described conventional apparatus (FIGS. 4A to 4C) in that:
The point is that the insulating ring 44 and the insulating adhesive 57 are eliminated, and a sprayed insulating layer 47 (insulating portion) is introduced instead.
【００３０】溶射絶縁層４７の形成は、静電チャック５
０のカソード部４０（電極）への接着に先だって行われ
る。すなわち、電極導体４１のうち従来例では絶縁リン
グ４４の装着箇所となっていた上側の角部に対し、更な
る切削や研削の加工が施されて、絶縁層化したい表層部
分が削り落とされる。その際、その深さ・厚さは数十μ
ｍ〜数百μｍ程度で足りるがそれ以上あっても良い。ま
た、そこの面粗度は被着性を良くするため数μｍ程度に
すると良い。それから、そこへ絶縁材料が溶射される。The sprayed insulating layer 47 is formed by the electrostatic chuck 5
This is performed prior to the bonding of the “0” to the cathode section 40 (electrode). That is, the upper corner portion of the electrode conductor 41, which was the mounting position of the insulating ring 44 in the conventional example, is subjected to further cutting or grinding, and the surface layer portion to be formed into an insulating layer is cut off. At that time, the depth and thickness are several tens of μ
About m to several hundred μm is sufficient, but may be more. The surface roughness is preferably set to about several μm to improve the adherence. The insulating material is then sprayed there.
【００３１】絶縁材料には、電気絶縁に加えてプラズマ
耐性も優れたアルミナ（Ａｌ2 Ｏ3）や，二酸化珪素
（ＳｉＯ2 ），シリコン（Ｓｉ、珪素），炭化珪素（Ｓ
ｉＣ）等が好適である。その溶射には、プラズマ溶射
や、電子ビームを用いた溶射などが適している。その
他、絶縁性のエンジニアリングプラスチックを適宜な溶
剤に溶かし、それを霧状にして吹き付ける、といった手
法でも形成可能である。Examples of the insulating material include alumina (Al 2 O 3 ), silicon dioxide (SiO 2 ), silicon (Si, silicon), and silicon carbide (S) which have excellent plasma resistance in addition to electric insulation.
iC) and the like are preferred. For the thermal spraying, plasma spraying, thermal spraying using an electron beam, or the like is suitable. In addition, it can also be formed by dissolving an insulating engineering plastic in an appropriate solvent and spraying it in the form of a mist.
【００３２】かかる溶射にて溶射絶縁層４７の形成され
た電極導体４１は、静電チャック５０の接着対象面が研
磨等にて平坦に仕上げられる。その他の溶射絶縁層４７
形成部位も必要に応じて適切な形状や適度な面粗度に仕
上げられる。それから、静電チャック５０が接着され
る。そして、カソード部４０が出来上がったとき、溶射
絶縁層４７は、そのうちのオーバーラップ部４７ａが電
極導体４１のうち静電チャックの辺縁部と接する部分に
来ており、頸部側面４７ｂ及び肩部上面４７ｃの部分が
静電チャック５０から食み出て拡がっているが、電極導
体４１のうち静電チャック５０の中央部と接する部分に
は無いものとなっている。The surface of the electrode conductor 41 on which the thermal spray insulating layer 47 is formed by such thermal spraying is finished flat by polishing or the like on the surface to be bonded of the electrostatic chuck 50. Other thermal spray insulating layer 47
The formation site is also finished to an appropriate shape and an appropriate surface roughness as needed. Then, the electrostatic chuck 50 is bonded. When the cathode portion 40 is completed, the sprayed insulating layer 47 has the overlap portion 47a of which comes into contact with the edge of the electrostatic chuck in the electrode conductor 41, the neck side surface 47b and the shoulder portion. Although the portion of the upper surface 47c protrudes from the electrostatic chuck 50 and spreads, the portion of the electrode conductor 41 that is in contact with the center of the electrostatic chuck 50 does not exist.
【００３３】この第１実施例のプラズマ処理装置につい
て、その使用態様及び動作を説明する。装置全体の動作
やプラズマ処理の手順等は公知の一般的なもので足りる
ので、ここでは、溶射絶縁層４７の働き等について述べ
る。The usage and operation of the plasma processing apparatus of the first embodiment will be described. Since the operation of the entire apparatus, the procedure of the plasma processing, and the like need only be known in general, the operation of the thermal sprayed insulating layer 47 will be described here.
【００３４】この場合、電極導体４１は、静電チャック
５０と溶射絶縁層４７と絶縁テープ４５とによって僅か
な隙間まで確実に覆われ、プラズマ処理空間１３から完
全に絶縁分離される。そして、プラズマ処理の進行に伴
ってプラズマ処理空間１３にプラズマが形成されても又
は導入されても、そのプラズマは電極導体４１の表面に
達することができない又は例え到達したとしてもほんの
僅かに過ぎない。こうして、電極導体４１がプラズマ被
爆から守られる。In this case, the electrode conductor 41 is securely covered to a small gap by the electrostatic chuck 50, the sprayed insulating layer 47 and the insulating tape 45, and is completely insulated and separated from the plasma processing space 13. Then, even if plasma is formed or introduced into the plasma processing space 13 with the progress of the plasma processing, the plasma cannot reach the surface of the electrode conductor 41, or even if it reaches the electrode conductor 41, only a little. . Thus, the electrode conductor 41 is protected from the plasma exposure.
【００３５】また、そのようなプラズマ処理の実行と休
止とが繰り返された場合、昇温と降温とが交互に行われ
て、その度に電極導体４１が膨張収縮し、それに伴って
溶射絶縁層４７も伸縮させられるが、溶射絶縁層４７
は、電極導体４１表面に比較的強く張り付いているう
え、溶射形成に基づいて伸縮性も良くなっているので、
剥がれたり皺になったりすることは滅多に無い。こうし
て、このプラズマ処理装置にあっては、接着式の静電チ
ャックを電極に装着していても、その電極の絶縁が長期
に亘って良好に保たれる。When the execution and the pause of the plasma processing are repeated, the temperature is increased and decreased alternately, and each time the electrode conductor 41 expands and contracts, and accordingly, the sprayed insulating layer is formed. 47 can also be expanded and contracted,
Is relatively strongly adhered to the surface of the electrode conductor 41, and also has improved elasticity based on thermal spray formation.
It rarely peels or wrinkles. Thus, in this plasma processing apparatus, even if the adhesive electrostatic chuck is attached to the electrode, the insulation of the electrode can be maintained well for a long period of time.
【００３６】[0036]
【第２実施例】図２に要部を示した本発明のプラズマ処
理装置が上述した第１実施例のものと相違するのは、絶
縁シート４８が追加された点である。絶縁シート４８
は、絶縁テープ４５と同様の絶縁物たとえばポリスチレ
ンフイルムやポリイミドシート等からなるものでも良く
或いは異質の絶縁物からなるものでも良いが、外縁部が
絶縁テープ４５と接着され、内周部が肩部上面４７ｃの
上面へ密に重ねられている。Second Embodiment The plasma processing apparatus of the present invention whose main part is shown in FIG. 2 is different from that of the first embodiment in that an insulating sheet 48 is added. Insulation sheet 48
May be made of the same insulating material as the insulating tape 45, such as a polystyrene film or a polyimide sheet, or may be made of a different insulating material, but the outer edge portion is bonded to the insulating tape 45, and the inner peripheral portion is a shoulder portion. It is densely stacked on the upper surface of the upper surface 47c.
【００３７】この場合も、電極導体４１が静電チャック
５０と溶射絶縁層４７と絶縁シート４８と絶縁テープ４
５とによってプラズマ処理空間１３から絶縁分離される
が、この場合は、絶縁シート４８の導入によって肩部上
面４７ｃの拡がりが少なくて済むので、手間もコストも
掛かる溶射作業が軽減される。Also in this case, the electrode conductor 41 is formed by the electrostatic chuck 50, the sprayed insulating layer 47, the insulating sheet 48, and the insulating tape 4.
5 separates the plasma processing space 13 from the plasma processing space 13. In this case, the introduction of the insulating sheet 48 reduces the spread of the shoulder upper surface 47c, thereby reducing the time-consuming and costly thermal spraying operation.
【００３８】[0038]
【その他】なお、上記実施例では、平行平板形エッチャ
ーへの適用例について述べたが、この発明の適用は、エ
ッチャーに限られるもので無く、平行平板形のものに限
られるものでも無い。[Others] In the above embodiment, an example of application to a parallel plate type etcher has been described. However, application of the present invention is not limited to an etcher and is not limited to a parallel plate type etcher.
【００３９】[0039]
【発明の効果】以上の説明から明らかなように、本発明
の第１の解決手段のプラズマ処理装置にあっては、静電
チャックを電極に接着するのを前提としつつも、静電チ
ャック辺縁部近傍での電極導体の絶縁被覆に非接着方式
を組み合わせたことにより、静電チャックの接着された
電極でもその絶縁が長期に亘って良いプラズマ処理装置
を実現することができたという有利な効果が有る。As is clear from the above description, in the plasma processing apparatus according to the first solution of the present invention, it is assumed that the electrostatic chuck is adhered to the electrode, but the electrostatic chuck side By combining the non-adhesive method with the insulating coating of the electrode conductor near the edge, it is possible to realize a plasma processing apparatus in which the insulation of the electrode to which the electrostatic chuck is bonded can be maintained for a long time. It has an effect.
【００４０】また、本発明の第２の解決手段のプラズマ
処理装置にあっては、溶射面積が少なくて済むようにし
たことにより、静電チャックの接着された電極でもその
絶縁が長期に亘って良いプラズマ処理装置を容易かつ安
価に実現することができたという有利な効果を奏する。Further, in the plasma processing apparatus according to the second solution of the present invention, since the sprayed area is small, the insulation of the electrode to which the electrostatic chuck is bonded is maintained for a long time. There is an advantageous effect that a good plasma processing apparatus can be easily and inexpensively realized.
【００４１】さらに、本発明の第３の解決手段のプラズ
マ処理装置にあっては、溶射範囲を周りへ拡げたことに
より、静電チャックの接着された電極でもその絶縁が長
期に亘って良いプラズマ処理装置を容易に実現すること
ができるようになったという有利な効果が有る。Further, in the plasma processing apparatus according to the third solution of the present invention, by expanding the thermal spraying area, even if the electrode to which the electrostatic chuck is adhered, its insulation can be maintained for a long time. There is an advantageous effect that the processing device can be easily realized.
【００４２】また、本発明の第４の解決手段のプラズマ
処理装置にあっては、絶縁性に加えてプラズマ耐性も良
い絶縁材料を溶射するようにしたことにより、静電チャ
ックの接着された電極でもその絶縁が長期に亘って良い
プラズマ処理装置を確実に実現することがでるようにな
ったという有利な効果を奏する。Further, in the plasma processing apparatus according to the fourth solution of the present invention, by spraying an insulating material having good plasma resistance in addition to insulation, the electrode to which the electrostatic chuck is bonded is sprayed. However, there is an advantageous effect that it is possible to reliably realize a plasma processing apparatus whose insulation is good over a long period of time.
【図１】 本発明のプラズマ処理装置の第１実施例につ
いて、被処理物を保持する下部電極のうち辺縁部分の縦
断面模式図である。FIG. 1 is a schematic vertical cross-sectional view of an edge portion of a lower electrode holding an object to be processed in a first embodiment of a plasma processing apparatus of the present invention.
【図２】 本発明のプラズマ処理装置の第２実施例につ
いて、下部電極のうち辺縁部分の縦断面模式図である。FIG. 2 is a schematic vertical cross-sectional view of an edge portion of a lower electrode in a second embodiment of the plasma processing apparatus of the present invention.
【図３】 被処理物を保持するために静電チャックを具
えているプラズマ処理装置について、その一般的な構造
を示す縦断面模式図であり、（ａ）が真空チャンバの全
体図、（ｂ）が静電チャックを装着した下部電極であ
る。FIG. 3 is a schematic longitudinal sectional view showing a general structure of a plasma processing apparatus provided with an electrostatic chuck for holding an object to be processed, (a) being an overall view of a vacuum chamber, (b) ) Is a lower electrode on which an electrostatic chuck is mounted.
【図４】 （ａ）〜（ｃ）何れも従来のプラズマ処理装
置における下部電極の辺縁部分についての縦断面模式図
である。FIGS. 4A to 4C are schematic vertical cross-sectional views of an edge portion of a lower electrode in a conventional plasma processing apparatus.
１ ウエハ（処理対象板状体、基板、試料、被処理
物） ２ 真空チャンバ本体部（真空チャンバ） ２ａ 吸引口（排気口） ３ 真空チャンバ蓋部（真空チャンバ） ４ 可変バルブ（可変絞り、圧力制御機構、圧力制御
手段） ４ａ ゲートバルブ（仕切弁） ５ 真空ポンプ １１ アノード部（平行平板の一方、上部電極、対向
壁） １１ａ アッパーサポート １３ プラズマ処理空間 ３１ ＲＦ電源（高周波電源） ３１ａ 給電線（導電線） ４０ カソード部（平行平板の他方、下部電極、被処理
物の保持部） ４０ａ ローアーサポート ４１ 電極導体（板状良導体、電極の導体部） ４２ 絶縁カバー部（電極導体周囲の絶縁性覆部） ４３ シールドカバー（接地部） ４４ 絶縁リング（静電チャック周囲の絶縁部材） ４５ 絶縁テープ（プラズマ耐性フィルム、間隙内
の絶縁シート部材） ４６ 絶縁リング（静電チャック周囲の絶縁部材） ４７ 溶射絶縁層（下部電極に溶射形成された絶縁
部） ４７ａ オーバーラップ部（静電チャックの辺縁
部と接する部分） ４７ｂ 頸部側面（静電チャックとは接しない外
延部・拡張部） ４７ｃ 肩部上面（静電チャックとは接しない外
延部・拡張部） ４８ 絶縁シート（プラズマ耐性シート、間隙外の
絶縁シート部材） ５０ 静電チャック（被処理物を保持する手段） ５１ バイアス電源（直流高電圧電源） ５１ａ 給電線（導電線） ５１ｂ 給電孔（導電線絶縁部） ５２ 上部絶縁層（基板側絶縁層、被処理物乗載側
絶縁層） ５３ 導電層（中間層） ５４ 下部絶縁層（電極側絶縁層、電極導体接着側
絶縁層） ５５ 中間接着層（導電層と上下絶縁層との接着
層） ５６ 下部接着層（静電チャックと電極導体との接
着層） ５７ 絶縁性接着剤（プラズマ耐性の静電チャック
側周面被覆部材）Reference Signs List 1 wafer (plate, substrate, sample, object to be processed) 2 vacuum chamber main body (vacuum chamber) 2a suction port (exhaust port) 3 vacuum chamber lid (vacuum chamber) 4 variable valve (variable throttle, pressure) Control mechanism, pressure control means) 4a Gate valve (gate valve) 5 Vacuum pump 11 Anode unit (one of parallel plates, upper electrode, opposed wall) 11a Upper support 13 Plasma processing space 31 RF power supply (high-frequency power supply) 31a Power supply line ( 40a Cathode part (the other part of the parallel flat plate, lower electrode, holding part for processing object) 40a Lower support 41 Electrode conductor (plate-like conductor, conductor part of electrode) 42 Insulating cover part (insulating cover around electrode conductor) Part) 43 Shield cover (ground part) 44 Insulation ring (insulation member around electrostatic chuck) 45 Insulation tape (plasma resistant film) Insulating sheet member in the gap) 46 Insulating ring (insulating member around electrostatic chuck) 47 Sprayed insulating layer (insulating portion formed by spraying on lower electrode) 47a Overlap portion (portion in contact with periphery of electrostatic chuck) 47b Side surface of neck (extended / extended portion not in contact with electrostatic chuck) 47c Upper surface of shoulder (extended / extended portion not in contact with electrostatic chuck) 48 Insulating sheet (plasma resistant sheet, insulating sheet outside gap) 50) Electrostatic chuck (means for holding an object to be processed) 51 Bias power supply (DC high-voltage power supply) 51a Power supply line (conductive line) 51b Power supply hole (conductive line insulating part) 52 Upper insulating layer (substrate-side insulating layer, Insulation layer on the loading side of the object to be processed 53 Conductive layer (intermediate layer) 54 Lower insulating layer (insulating layer on electrode side, insulating layer on electrode conductor bonding side) 55 Intermediate adhesive layer (adhesive layer between conductive layer and upper and lower insulating layers) Lower adhesive layer (electrostatic chuck and the adhesive layer of the electrode conductor) 57 insulating adhesive (the electrostatic chuck side peripheral surface covering member of the plasma resistance)
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G075 AA24 AA30 BC04 BC06 CA25 EB01 EB42 EC21 EC25 FB04 FC11 FC15 5F004 AA16 BA04 BB22 BB29 BD04 5F031 CA02 CA05 HA02 HA03 HA16 HA18 MA28 MA32 PA30 5F045 AA08 EC05 EH14 EM02 EM05 EM09 ──────────────────────────────────────────────────続 き Continued on front page F-term (reference) 4G075 AA24 AA30 BC04 BC06 CA25 EB01 EB42 EC21 EC25 FB04 FC11 FC15 5F004 AA16 BA04 BB22 BB29 BD04 5F031 CA02 CA05 HA02 HA03 HA16 HA18 MA28 MA32 PA30 5F045 AA08 EC05 EH14 EM05EM
Claims (4)
真空チャンバ内に設置された電極と、導電層を有し前記
電極の表面に接着して設けられた静電チャックとを具備
したプラズマ処理装置において、前記電極のうち前記静
電チャックの辺縁部と接する部分に、絶縁材料の溶射に
て形成された絶縁部が設けられていることを特徴とする
プラズマ処理装置。1. A plasma processing apparatus comprising: a vacuum chamber surrounding a plasma space; an electrode installed in the vacuum chamber; and an electrostatic chuck having a conductive layer and adhered to a surface of the electrode. 3. The plasma processing apparatus according to claim 1, wherein an insulating portion formed by spraying an insulating material is provided on a portion of the electrode which is in contact with a peripheral portion of the electrostatic chuck.
真空チャンバ内に設置された電極と、導電層を有し前記
電極の表面に接着して設けられた静電チャックとを具備
したプラズマ処理装置において、前記電極のうち前記静
電チャックの中央部と接する部分は除いて前記静電チャ
ックの辺縁部と接する部分に、絶縁材料の溶射にて形成
された絶縁部が設けられていることを特徴とするプラズ
マ処理装置。2. A plasma processing apparatus comprising: a vacuum chamber surrounding a plasma space; an electrode installed in the vacuum chamber; and an electrostatic chuck having a conductive layer and adhered to a surface of the electrode. In the above-mentioned, an insulating portion formed by thermal spraying of an insulating material is provided in a portion of the electrode which is in contact with a peripheral portion of the electrostatic chuck except for a portion in contact with a central portion of the electrostatic chuck. Characteristic plasma processing apparatus.
出て拡がっていることを特徴とする請求項１又は請求項
２に記載されたプラズマ処理装置。3. The plasma processing apparatus according to claim 1, wherein the insulating portion protrudes from the electrostatic chuck and extends.
素と炭化珪素とのうち何れか一つからなることを特徴と
する請求項１乃至請求項３の何れかに記載されたプラズ
マ処理装置。4. The plasma processing apparatus according to claim 1, wherein said insulating material is made of any one of alumina, silicon dioxide, silicon, and silicon carbide.
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|---|---|---|---|
| JP2001094740A JP4868649B2 (en) | 2001-03-29 | 2001-03-29 | Plasma processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001094740A JP4868649B2 (en) | 2001-03-29 | 2001-03-29 | Plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002299425A true JP2002299425A (en) | 2002-10-11 |
| JP4868649B2 JP4868649B2 (en) | 2012-02-01 |
Family
ID=18948890
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001094740A Expired - Lifetime JP4868649B2 (en) | 2001-03-29 | 2001-03-29 | Plasma processing equipment |
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| Country | Link |
|---|---|
| JP (1) | JP4868649B2 (en) |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63281430A (en) * | 1987-05-14 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Electrode structure of dry etching device |
| JPH06275708A (en) * | 1993-03-24 | 1994-09-30 | Tokyo Electron Ltd | Electrostatic chuck |
| JPH06275706A (en) * | 1993-03-18 | 1994-09-30 | Hitachi Ltd | Electrostatically attracting apparatus |
| JPH08167595A (en) * | 1994-12-09 | 1996-06-25 | Tokyo Electron Ltd | Plasma treatment device |
| JPH0982683A (en) * | 1995-09-12 | 1997-03-28 | Toshiba Corp | Dry etching system |
| JPH09172056A (en) * | 1995-12-20 | 1997-06-30 | Souzou Kagaku:Kk | Plasma processing apparatus for semiconductor substrate |
| JPH09260472A (en) * | 1996-03-19 | 1997-10-03 | Sony Corp | Electrostatic chuck |
| JPH10150100A (en) * | 1996-09-19 | 1998-06-02 | Hitachi Ltd | Electrostatic chuck, method and system for processing sample using it |
| JP2000049143A (en) * | 1998-07-28 | 2000-02-18 | Foi:Kk | Plasma treatment apparatus |
| JP2000212777A (en) * | 1999-01-26 | 2000-08-02 | Matsushita Electric Ind Co Ltd | Plasma etching device |
| JP2000216147A (en) * | 1999-01-27 | 2000-08-04 | Matsushita Electric Ind Co Ltd | Dry etching apparatus |
-
2001
- 2001-03-29 JP JP2001094740A patent/JP4868649B2/en not_active Expired - Lifetime
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63281430A (en) * | 1987-05-14 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Electrode structure of dry etching device |
| JPH06275706A (en) * | 1993-03-18 | 1994-09-30 | Hitachi Ltd | Electrostatically attracting apparatus |
| JPH06275708A (en) * | 1993-03-24 | 1994-09-30 | Tokyo Electron Ltd | Electrostatic chuck |
| JPH08167595A (en) * | 1994-12-09 | 1996-06-25 | Tokyo Electron Ltd | Plasma treatment device |
| JPH0982683A (en) * | 1995-09-12 | 1997-03-28 | Toshiba Corp | Dry etching system |
| JPH09172056A (en) * | 1995-12-20 | 1997-06-30 | Souzou Kagaku:Kk | Plasma processing apparatus for semiconductor substrate |
| JPH09260472A (en) * | 1996-03-19 | 1997-10-03 | Sony Corp | Electrostatic chuck |
| JPH10150100A (en) * | 1996-09-19 | 1998-06-02 | Hitachi Ltd | Electrostatic chuck, method and system for processing sample using it |
| JP2000049143A (en) * | 1998-07-28 | 2000-02-18 | Foi:Kk | Plasma treatment apparatus |
| JP2000212777A (en) * | 1999-01-26 | 2000-08-02 | Matsushita Electric Ind Co Ltd | Plasma etching device |
| JP2000216147A (en) * | 1999-01-27 | 2000-08-04 | Matsushita Electric Ind Co Ltd | Dry etching apparatus |
Cited By (28)
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|---|---|---|---|---|
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| JPWO2004084298A1 (en) * | 2003-03-19 | 2006-06-29 | 東京エレクトロン株式会社 | Substrate holding mechanism using electrostatic chuck and manufacturing method thereof |
| KR100809124B1 (en) * | 2003-03-19 | 2008-02-29 | 동경 엘렉트론 주식회사 | Substrate holding mechanism using electrostatic chuck and method of manufacturing the same |
| CN100390955C (en) * | 2003-03-19 | 2008-05-28 | 东京毅力科创株式会社 | Substrate holding mechanism using electrostatic chuck and method of manufacturing the same |
| WO2004084298A1 (en) * | 2003-03-19 | 2004-09-30 | Tokyo Electron Limited | Substrate holding mechanism using electrostaic chuck and method of manufacturing the same |
| US7431788B2 (en) * | 2005-07-19 | 2008-10-07 | Lam Research Corporation | Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system |
| US8142609B2 (en) * | 2007-03-30 | 2012-03-27 | Tokyo Electron Limited | Plasma processing apparatus |
| JP2008251854A (en) * | 2007-03-30 | 2008-10-16 | Tokyo Electron Ltd | Plasma processor |
| US7913987B2 (en) | 2008-02-08 | 2011-03-29 | Tokyo Electron Limited | Substrate mounting table for plasma processing apparatus, plasma processing apparatus and insulating film forming method |
| JP2009188332A (en) * | 2008-02-08 | 2009-08-20 | Tokyo Electron Ltd | Substrate-mounting stand for plasma processing apparatus, plasma processing apparatus and method of forming insulating film |
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| KR101680787B1 (en) * | 2009-05-15 | 2016-11-29 | 엔테그리스, 아이엔씨. | Electrostatic chuck with polymer protrusions |
| US9025305B2 (en) | 2010-05-28 | 2015-05-05 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| JP2013042145A (en) * | 2012-09-03 | 2013-02-28 | Tokyo Electron Ltd | Plasma processing apparatus |
| US10340171B2 (en) | 2016-05-18 | 2019-07-02 | Lam Research Corporation | Permanent secondary erosion containment for electrostatic chuck bonds |
| US11069553B2 (en) | 2016-07-07 | 2021-07-20 | Lam Research Corporation | Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity |
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