JP2002299154A - Method for manufacturing electronic component - Google Patents
Method for manufacturing electronic componentInfo
- Publication number
- JP2002299154A JP2002299154A JP2001104601A JP2001104601A JP2002299154A JP 2002299154 A JP2002299154 A JP 2002299154A JP 2001104601 A JP2001104601 A JP 2001104601A JP 2001104601 A JP2001104601 A JP 2001104601A JP 2002299154 A JP2002299154 A JP 2002299154A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ceramic
- electronic component
- baking
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電子部品、具体的
にはチップコンデンサの端子電極を形成する電子部品の
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electronic component, specifically, an electronic component for forming a terminal electrode of a chip capacitor.
【0002】[0002]
【従来の技術】従来、チップコンデンサは、あらゆる電
子機器に利用され、年々その数も増加している。この種
の図3に示すようなチップコンデンサの端子電極の形成
は、焼成されたチップ素体の両端面に端子電極となる銀
あるいは銅ペーストを塗布し、乾燥焼き付けしその後、
電気メッキを行っていた。特に、近年では、電子機器の
小型化に伴うチップの小型化と高容量化が強く要求さ
れ、チップコンデンサの小型高容量化が進み、300層
以上の高積層が必要となっている。これらのチップコン
デンサは、チップ素体が持つ内部歪みの関係から熱的に
不安定であり、しばしば半田付け時の熱によるチップ素
体へのクラックが問題となっていた。また、電気メッキ
工程では、しばしばメッキ液が端子電極あるいは端子電
極と素体の界面から侵入し、それらが電気的特性に悪影
響を与えることもあった。2. Description of the Related Art Conventionally, chip capacitors have been used in various electronic devices, and the number of chip capacitors has been increasing year by year. This type of terminal electrode of a chip capacitor as shown in FIG. 3 is formed by applying silver or copper paste as a terminal electrode to both end surfaces of a fired chip body, drying and baking,
Electroplating was being performed. In particular, in recent years, there has been a strong demand for miniaturization and high capacitance of chips accompanying miniaturization of electronic devices, and miniaturization and high capacitance of chip capacitors have progressed, and high lamination of 300 or more layers is required. These chip capacitors are thermally unstable due to the internal distortion of the chip body, and cracks in the chip body due to heat during soldering have often been a problem. Further, in the electroplating process, a plating solution often invades from a terminal electrode or an interface between the terminal electrode and the element body, and these may adversely affect the electrical characteristics.
【0003】[0003]
【発明が解決しようとする課題】そこで、本発明は、チ
ップ素体が持つ内部歪みの関係から熱的に不安定な状態
を改善し、かつメッキ液の侵入を大幅に改善できる電子
部品の製造方法を提供することを目的とする。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to manufacture an electronic component capable of improving a thermally unstable state due to the internal distortion of a chip body and greatly improving penetration of a plating solution. The aim is to provide a method.
【0004】[0004]
【課題を解決するための手段】そのために、本発明の電
子部品の製造方法は、焼成前のチップ素体の両端面に、
金属粉末とセラミック粉末を混ぜたセラミック電極ベー
ストを薄く塗布乾燥し、焼成前のチップ素体とセラミッ
ク電極ペーストとを同時に焼成し、焼成して得られたチ
ップ素体の両端面にポリマー電極を塗布し、硬化させた
後、ポリマー電極上に電気メッキを施すものである。For this purpose, a method for manufacturing an electronic component according to the present invention comprises the steps of:
A ceramic electrode base containing a mixture of metal powder and ceramic powder is thinly coated and dried, and the chip body before firing and the ceramic electrode paste are simultaneously fired, and polymer electrodes are applied to both end surfaces of the fired chip body. Then, after curing, electroplating is performed on the polymer electrode.
【0005】[0005]
【実施例】本発明の電子部品、すなわちチップコンデン
サを図面に基づいて説明すると、図1及び図2に示すよ
うに、チップコンデンサは、表面実装型の積層セラミッ
クコンデンサであり、内部電極2を有するセラミック誘
電体4を複数回積層して得られたグリーンチップのチッ
プ素体1の両端面に、セラミック電極ペースト5とポリ
マー電極6により端子電極3を形成し、さらにポリマー
電極6上にNiメッキ皮膜7とSn/PbあるいはSnメッキ被
膜8を形成したものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS An electronic component of the present invention, that is, a chip capacitor will be described with reference to the drawings. As shown in FIGS. 1 and 2, the chip capacitor is a surface-mount type multilayer ceramic capacitor having an internal electrode 2. A terminal electrode 3 is formed on both end surfaces of a chip body 1 of a green chip obtained by laminating a ceramic dielectric 4 a plurality of times with a ceramic electrode paste 5 and a polymer electrode 6, and a Ni plating film is further formed on the polymer electrode 6. 7 and an Sn / Pb or Sn plating film 8 are formed.
【0006】ここで、前記内部電極2としては、Pd、Ag
/Pd、Ag等の貴金属、或いはNi、Cu等の卑金属が用いら
れ、前記セラミック誘電体4としては、チタン酸バリウ
ム系、鉛系ペロブスカイト、チタン酸ストロンチウム系
等の誘電体が用いられる。前記セラミック電極ペースト
5は、Ag、Ag/Pd、Ni、Cu等の導電体からなる金属粉末
と、セラミック原料粉末とを、溶剤で溶解した有機バイ
ンダーに分散した導電ペーストからなる。ここで使用さ
れるセラミック電極ペースト5の金属粉末とセラミック
粉末との割合は、電極層としての導電性を確保するため
に金属粉末50〜90重量%に対してセラミック粉末1
0〜50重量%であることが好ましい。金属粉末の割合
が50重量%未満であると、セラミック電極ペースト層
と内部電極2との電気的接続が不十分となり、また90
%以上では、セラミック電極ペースト層の焼成時の収縮
が大きくなり、安定した端子電極形成が困難になる。Here, as the internal electrodes 2, Pd, Ag
A noble metal such as / Pd or Ag, or a base metal such as Ni or Cu is used. As the ceramic dielectric 4, a dielectric such as barium titanate, lead perovskite, or strontium titanate is used. The ceramic electrode paste 5 is made of a conductive paste in which a metal powder composed of a conductor such as Ag, Ag / Pd, Ni, and Cu, and a ceramic raw material powder are dispersed in an organic binder dissolved in a solvent. The ratio between the metal powder and the ceramic powder of the ceramic electrode paste 5 used here is 50 to 90% by weight of the metal powder in order to secure conductivity as an electrode layer.
It is preferably from 0 to 50% by weight. When the ratio of the metal powder is less than 50% by weight, the electrical connection between the ceramic electrode paste layer and the internal electrode 2 becomes insufficient, and
%, The shrinkage during firing of the ceramic electrode paste layer becomes large, and it becomes difficult to form a stable terminal electrode.
【0007】前記ポリマー電極6は、導電性金属粉末と
熱硬化型樹脂とを有機溶剤でペースト化した導電性樹脂
ペーストである。なお、金属粉末としては、Ag、Pd等の
貴金属粉末やNi、Cu粉末等を用いることができ、また熱
硬化性樹脂としては、エポキシ、フェノール樹脂等が挙
げられる。The polymer electrode 6 is a conductive resin paste obtained by forming a conductive metal powder and a thermosetting resin into a paste with an organic solvent. In addition, as a metal powder, a noble metal powder such as Ag or Pd, or a Ni or Cu powder can be used, and as a thermosetting resin, an epoxy resin, a phenol resin, or the like can be used.
【0008】このような構成からなるポリマー電極6上
に、電解バレルメッキ法で、スルファミン酸ニッケルメ
ッキ浴を用いてNiメッキ皮膜7を形成し、さらにスルホ
ン酸メッキ浴を用いてSn/Pbメッキ被膜8を形成したも
のである。On the polymer electrode 6 having such a structure, a Ni plating film 7 is formed by an electrolytic barrel plating method using a nickel sulfamate plating bath, and an Sn / Pb plating film is further formed using a sulfonic acid plating bath. 8 is formed.
【0009】本発明の電子部品の製造方法は、次の如き
製造工程からなり、図2に基づいて説明すると、まず、
内部電極2を有するセラミック誘電体4を複数回積層し
て得られたグリーンチップをチップ状に切断してチップ
素体1を形成する。次に、前記チップ素体1の両端面
に、金属粉末とセラミック粉末を混ぜたセラミック電極
ペースト5を薄く塗布し乾燥する。(同時焼成端子電極
塗布工程) そして、焼成前のチップ素体1とセラミック電極ペース
ト5とを同時に焼成する。(焼成工程) さらに、焼成して得られたチップ素体1の両端面のセラ
ミック電極ペースト5にポリマー電極6を塗布し硬化す
る。このようにして形成されたポリマー電極6上に、電
解バレルメッキ法で、スルファミン酸ニッケルメッキ浴
を用いてNiメッキ皮膜7を形成し、さらにスルホン酸メ
ッキ浴を用いてSn/Pbメッキ被膜8を形成する。(端子
電極形成工程) 以上のようにして、図1に示すチップコンデンサの端子
電極3を形成する。The method for manufacturing an electronic component according to the present invention comprises the following manufacturing steps. Referring to FIG.
A green chip obtained by laminating the ceramic dielectrics 4 having the internal electrodes 2 a plurality of times is cut into chips to form a chip body 1. Next, a ceramic electrode paste 5 in which a metal powder and a ceramic powder are mixed is thinly applied to both end surfaces of the chip body 1 and dried. (Simultaneous firing terminal electrode application step) Then, the chip body 1 and the ceramic electrode paste 5 before firing are fired simultaneously. (Firing Step) Further, the polymer electrodes 6 are applied to the ceramic electrode pastes 5 on both end surfaces of the chip body 1 obtained by firing, and are cured. On the polymer electrode 6 thus formed, a Ni plating film 7 is formed by an electrolytic barrel plating method using a nickel sulfamate plating bath, and a Sn / Pb plating film 8 is further formed by using a sulfonic acid plating bath. Form. (Terminal Electrode Forming Step) As described above, the terminal electrode 3 of the chip capacitor shown in FIG. 1 is formed.
【0010】[0010]
【効果】以上、詳述したように、本発明の電子部品の製
造方法は、焼成前のチップ素体の両端面に、金属粉末と
セラミック粉末を混ぜたセラミック電極ベーストを薄く
塗布乾燥し、焼成前のチップ素体とセラミック電極ペー
ストとを同時に焼成し、焼成して得られたチップ素体の
両端面にポリマー電極を塗布し、硬化させた後、電気メ
ッキを施すことにより、チップ素体が持つ内部歪みの関
係から熱的に不安定な状態を改善し、かつメッキ液の侵
入を大幅に改善できる。As described in detail above, the method for manufacturing an electronic component according to the present invention is characterized in that a ceramic electrode base in which a metal powder and a ceramic powder are mixed is thinly applied to both end surfaces of a chip body before firing, dried and fired. Simultaneously firing the previous chip body and the ceramic electrode paste, applying a polymer electrode to both end surfaces of the fired chip body, curing, and then electroplating the chip body, It is possible to improve the thermally unstable state due to the internal strain and to greatly improve the penetration of the plating solution.
【図1】本発明に使用されるチップコンデンサの縦断面
図図である。FIG. 1 is a vertical sectional view of a chip capacitor used in the present invention.
【図2】本発明のチップコンデンサの製造工程を示す説
明図である。FIG. 2 is an explanatory view showing a manufacturing process of the chip capacitor of the present invention.
【図3】従来のチップコンデンサの斜視図である。FIG. 3 is a perspective view of a conventional chip capacitor.
1 チップ素体 2 内部電極 3 端子電極 4 セラミック誘導体 5 セラミック電極ペースト 6 ポリマー電極 7 Niメッキ皮膜 8 Sn/Pbメッキ被膜 DESCRIPTION OF SYMBOLS 1 Chip body 2 Internal electrode 3 Terminal electrode 4 Ceramic derivative 5 Ceramic electrode paste 6 Polymer electrode 7 Ni plating film 8 Sn / Pb plating film
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5E001 AB03 AF06 AH01 AH07 AH09 5E082 AA01 AB03 BC19 BC33 FG26 FG54 GG10 GG26 GG28 JJ03 JJ23 JJ26 MM24 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5E001 AB03 AF06 AH01 AH07 AH09 5E082 AA01 AB03 BC19 BC33 FG26 FG54 GG10 GG26 GG28 JJ03 JJ23 JJ26 MM24
Claims (1)
末とセラミック粉末を混ぜたセラミック電極ベーストを
薄く塗布乾燥し、焼成前のチップ素体とセラミック電極
ペーストとを同時に焼成し、焼成して得られたチップ素
体の両端面にポリマー電極を塗布し、硬化させた後、ポ
リマー電極上に電気メッキを施すことを特徴とする電子
部品の製造方法。A ceramic electrode base containing a mixture of a metal powder and a ceramic powder is thinly applied to both end surfaces of a chip body before firing and dried, and the chip body and ceramic electrode paste before firing are simultaneously fired and fired. A method for producing an electronic component, comprising applying a polymer electrode to both end surfaces of a chip element obtained as described above, curing the polymer electrode, and then performing electroplating on the polymer electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001104601A JP2002299154A (en) | 2001-04-03 | 2001-04-03 | Method for manufacturing electronic component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001104601A JP2002299154A (en) | 2001-04-03 | 2001-04-03 | Method for manufacturing electronic component |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2002299154A true JP2002299154A (en) | 2002-10-11 |
Family
ID=18957436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001104601A Pending JP2002299154A (en) | 2001-04-03 | 2001-04-03 | Method for manufacturing electronic component |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002299154A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2007119281A1 (en) * | 2006-03-15 | 2009-08-27 | 株式会社村田製作所 | Multilayer electronic component and manufacturing method thereof |
JP2010238742A (en) * | 2009-03-30 | 2010-10-21 | Fdk Corp | Method of manufacturing chip-type electronic component, and chip-type electronic component |
JP2014022713A (en) * | 2012-07-18 | 2014-02-03 | Samsung Electro-Mechanics Co Ltd | Multilayer ceramic electronic component and method of manufacturing the same |
WO2016042884A1 (en) * | 2014-09-19 | 2016-03-24 | 株式会社村田製作所 | Chip-type ceramic semiconductor electronic component |
US10304631B2 (en) | 2015-11-26 | 2019-05-28 | Taiyo Yuden Co., Ltd. | Ceramic electronic component and method of producing the same |
-
2001
- 2001-04-03 JP JP2001104601A patent/JP2002299154A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2007119281A1 (en) * | 2006-03-15 | 2009-08-27 | 株式会社村田製作所 | Multilayer electronic component and manufacturing method thereof |
JP5188390B2 (en) * | 2006-03-15 | 2013-04-24 | 株式会社村田製作所 | Multilayer electronic component and manufacturing method thereof |
JP2010238742A (en) * | 2009-03-30 | 2010-10-21 | Fdk Corp | Method of manufacturing chip-type electronic component, and chip-type electronic component |
JP2014022713A (en) * | 2012-07-18 | 2014-02-03 | Samsung Electro-Mechanics Co Ltd | Multilayer ceramic electronic component and method of manufacturing the same |
WO2016042884A1 (en) * | 2014-09-19 | 2016-03-24 | 株式会社村田製作所 | Chip-type ceramic semiconductor electronic component |
CN107077970A (en) * | 2014-09-19 | 2017-08-18 | 株式会社村田制作所 | Chip-shaped ceramic semiconductors electronic unit |
US10304631B2 (en) | 2015-11-26 | 2019-05-28 | Taiyo Yuden Co., Ltd. | Ceramic electronic component and method of producing the same |
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