JP2002289676A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JP2002289676A JP2002289676A JP2001087281A JP2001087281A JP2002289676A JP 2002289676 A JP2002289676 A JP 2002289676A JP 2001087281 A JP2001087281 A JP 2001087281A JP 2001087281 A JP2001087281 A JP 2001087281A JP 2002289676 A JP2002289676 A JP 2002289676A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- thermal expansion
- insulating layer
- alloy
- low thermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、静電チャックに関
し、特に低熱膨張合金からなる静電チャックに関する。The present invention relates to an electrostatic chuck, and more particularly, to an electrostatic chuck made of a low thermal expansion alloy.
【0002】[0002]
【従来の技術】静電チャックは、半導体製造装置などの
部品として最近広く使われるようになった。その理由
は、機械的なチャッキングや真空チャックに比べ、発塵
が少ない、真空中でも使えるなどのメリットが認められ
てきたと思われる。2. Description of the Related Art Electrostatic chucks have recently been widely used as components of semiconductor manufacturing equipment and the like. The reason is considered to be that merits such as less dust generation and use even in a vacuum have been recognized as compared with mechanical chucking and vacuum chucks.
【0003】この静電チャックは、セラミックスなどで
作製された堅固なものも使われ始められているが、高価
なため、アルミニウム合金などからなる電導体または基
台の表面にアルミナ溶射層などの絶縁層を被覆しただけ
の簡易なものが主流である。As this electrostatic chuck, a rigid one made of ceramics or the like has begun to be used. However, since it is expensive, an insulating material such as an alumina sprayed layer is formed on the surface of a conductor or a base made of an aluminum alloy or the like. The simple thing which just covered the layer is the mainstream.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、このア
ルミニウム合金からなる静電チャックでは、アルミニウ
ム合金とアルミナ溶射層などの絶縁層との間の大きな熱
膨張差により、絶縁層が強く密着しないという問題があ
った。そのため、絶縁層がアルミニウム合金より剥離す
ることが生じていた。However, in the electrostatic chuck made of this aluminum alloy, there is a problem that the insulating layer does not adhere strongly due to a large difference in thermal expansion between the aluminum alloy and the insulating layer such as an alumina sprayed layer. there were. For this reason, the insulating layer has been separated from the aluminum alloy.
【0005】本発明は、上述した静電チャックが有する
課題に鑑みなされたものであって、その目的は、電導体
または基台と絶縁層との密着性が極めて優れた静電チャ
ックを提供することにある。The present invention has been made in view of the above-mentioned problems of the electrostatic chuck, and an object of the present invention is to provide an electrostatic chuck having extremely excellent adhesion between a conductor or a base and an insulating layer. It is in.
【0006】[0006]
【課題を解決するための手段】本発明者等は、上記目的
を達成するため鋭意研究した結果、電導体または基台を
低熱膨張合金からなる電導体または基台とすれば、その
上面に被覆する絶縁層との密着性が極めて優れた静電チ
ャックが得られるとの知見を得て本発明を完成した。Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, if the conductor or the base is made of a conductor or a base made of a low thermal expansion alloy, the upper surface thereof is covered. The present invention was completed based on the finding that an electrostatic chuck having extremely excellent adhesion to an insulating layer to be obtained was obtained.
【0007】即ち本発明は、(1)電導体表面に絶縁層
を被覆してなる静電チャックにおいて、該電導体が、低
熱膨張合金からなり、該絶縁層が、セラミックス層から
なることを特徴とする静電チャック(請求項1)とし、
(2)基台の上面に内部に電極が形成されている絶縁層
を被覆してなる静電チャックにおいて、該基台が、低熱
膨張合金からなり、該絶縁層が、セラミックス層からな
ることを特徴とする静電チャック(請求項2)とし、
(3)前記低熱膨張合金の線熱膨張係数が、前記絶縁層
と同等であることを特徴とする請求項1または2記載の
静電チャック(請求項3)とし、(4)前記低熱膨張合
金が、Fe−Ni−Mn系合金からなることを特徴とす
る請求項1乃至3記載の静電チャック(請求項4)とす
ることを要旨とする。以下さらに詳細に説明する。That is, the present invention provides (1) an electrostatic chuck comprising a conductor surface coated with an insulating layer, wherein the conductor is made of a low thermal expansion alloy, and the insulating layer is made of a ceramic layer. An electrostatic chuck (Claim 1)
(2) In an electrostatic chuck in which an insulating layer in which an electrode is formed on the upper surface of a base is coated, the base is made of a low thermal expansion alloy, and the insulating layer is made of a ceramic layer. A characteristic electrostatic chuck (claim 2);
(3) The electrostatic chuck according to (1) or (2), wherein the low thermal expansion alloy has a linear thermal expansion coefficient equal to that of the insulating layer. (4) The low thermal expansion alloy. Is made of an Fe—Ni—Mn-based alloy, and the gist of the invention is to provide an electrostatic chuck according to claims 1 to 3 (claim 4). This will be described in more detail below.
【0008】上記静電チャックとしては、その電導体
が、低熱膨張合金からなり、絶縁層が、セラミックス層
からなる静電チャックとした(請求項1)。In the above-mentioned electrostatic chuck, the conductor is made of a low thermal expansion alloy, and the insulating layer is made of a ceramic layer.
【0009】また、上記とは別の静電チャックとして
は、その基台が、低熱膨張合金からなり、絶縁層が、セ
ラミックス層からなる静電チャックとした(請求項
2)。As another electrostatic chuck, the base is made of a low thermal expansion alloy, and the insulating layer is made of a ceramic layer (claim 2).
【0010】上記で述べたように、静電チャックを構成
する電導体または基台を低熱膨張合金としたのは、その
表面または上面に形成する絶縁層との熱膨張差を小さく
することができるからである。As described above, the conductor or base constituting the electrostatic chuck is made of a low thermal expansion alloy, so that the difference in thermal expansion between the conductor and the insulating layer formed on the surface or the upper surface can be reduced. Because.
【0011】その低熱膨張合金の線熱膨張係数として
は、絶縁層と同等とした(請求項3)。アルミニウム合
金では線熱膨張係数を絶縁層に合わせるのは難しいが、
本発明の低熱膨張合金であれは、その低熱膨張合金の種
類、その組成を選ぶことによってかなりの範囲の線熱膨
張係数を選択できるので、低熱膨張合金と絶縁層との線
熱膨張係数を同等、あるいはほぼ同等とすることができ
る。この低熱膨張合金と絶縁層との線熱膨張係数を同
等、あるいはほぼ同等とすることにより、熱膨張差によ
る障害が少なくなるので、特に好ましいものとなる。The coefficient of linear thermal expansion of the low thermal expansion alloy is the same as that of the insulating layer. It is difficult to match the coefficient of linear thermal expansion with the insulating layer with aluminum alloy,
Regarding the low thermal expansion alloy of the present invention, a considerable range of linear thermal expansion coefficient can be selected by selecting the type and composition of the low thermal expansion alloy, so that the low thermal expansion alloy and the insulating layer have the same linear thermal expansion coefficient. , Or approximately equivalent. By making the linear thermal expansion coefficients of the low thermal expansion alloy and the insulating layer equal or substantially equal, the obstacle due to the difference in thermal expansion is reduced, which is particularly preferable.
【0012】その低熱膨張合金の種類としては、Fe−
Ni−Mn系合金とした(請求項4)。用いる合金とし
ては、線熱膨張係数がアルミニウム合金より低ければ何
でも構わないが、その中でセラミックス層に近い線熱膨
張係数を有するFe−Ni−Mn系の合金が特に好まし
い。[0012] As a kind of the low thermal expansion alloy, Fe-
A Ni-Mn alloy was used (claim 4). Any alloy may be used as long as the coefficient of linear thermal expansion is lower than that of an aluminum alloy. Among them, an Fe-Ni-Mn alloy having a linear thermal expansion coefficient close to that of a ceramic layer is particularly preferable.
【0013】[0013]
【発明の実施の形態】本発明の製造方法を述べると、先
ずFe−Ni−Mn系などからなる低熱膨張合金を用意
する。その用意した低熱膨張合金の表面をよく密着する
ように必要な面粗さ、平面度になるよう研削加工し、そ
の上面に溶射でアルミナなどのセラミックス層からなる
絶縁層を形成して静電チャックを作製する。BEST MODE FOR CARRYING OUT THE INVENTION The manufacturing method of the present invention will be described. First, a low thermal expansion alloy made of an Fe-Ni-Mn system is prepared. Grind the surface of the prepared low thermal expansion alloy so that it has the required surface roughness and flatness so that it adheres well, and form an insulating layer consisting of a ceramic layer such as alumina on the upper surface by spraying to form an electrostatic chuck. Is prepared.
【0014】一方、低熱膨張合金を基台とする場合に
は、用意した低熱膨張合金の表面を先と同様よく密着す
るように必要な面粗さ、平面度になるよう研削加工し、
その上面に溶射でアルミナなどのセラミックス層からな
る絶縁層を形成し、その上面にプラズマ溶射でタングス
テンなどからなる電極を形成し、さらにその上面に溶射
でアルミナなどのセラミックス層からなる絶縁層を形成
して静電チャックを作製する。On the other hand, when the low-thermal-expansion alloy is used as a base, the surface of the prepared low-thermal-expansion alloy is ground so as to have the necessary surface roughness and flatness so as to adhere well as before,
An insulating layer made of a ceramic layer such as alumina is formed on the upper surface by spraying, an electrode made of tungsten is formed on the upper surface by plasma spraying, and an insulating layer formed of a ceramic layer such as alumina is formed on the upper surface by spraying. Then, an electrostatic chuck is manufactured.
【0015】形成する絶縁層の厚さは、100〜500
μm程度が好ましく、100μmより薄いと耐電圧が低
くなり絶縁破壊が起こり易く、500μmより厚いと電
導体または基台との熱膨張差が顕著になり、熱衝撃によ
る亀裂/破損が生じ易く、しかも吸着力も低下する。絶
縁層であるセラミックス層の種類は最も一般的なのは、
アルミナであるが、これに限定されるものではなく、必
要な特性、例えば、高い誘電率が必要であれば、必要な
誘電率の大きさに応じてセラミックスの種類を適宜選べ
ばよい。The thickness of the insulating layer to be formed is 100 to 500.
If the thickness is less than 100 μm, the withstand voltage is low and dielectric breakdown is likely to occur. Adsorption power also decreases. The most common type of ceramic layer that is an insulating layer is
Alumina is not limited to alumina, but if necessary characteristics such as a high dielectric constant are required, the type of ceramic may be appropriately selected according to the required dielectric constant.
【0016】以上の方法で静電チャックを作製すれば、
電導体または基台と絶縁層との密着性が優れた静電チャ
ックが得られる。If an electrostatic chuck is manufactured by the above method,
An electrostatic chuck having excellent adhesion between the conductor or the base and the insulating layer can be obtained.
【0017】[0017]
【実施例】以下、本発明の実施例を比較例と共に具体的
に挙げ、本発明をより詳細に説明する。EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples of the present invention and Comparative Examples.
【0018】(実施例1) (1)静電チャックの作製 電導体としてFe−Ni−Mn系の組成が63.685
Fe−36.00Ni−0.25Mnからなる低熱膨張
合金(線熱膨張係数6.5〜7.5×10-6/℃)を用
い、それからφ300×t30mmの円盤を作製し、そ
の表面をよく密着するために表面粗さがRmaxで5μ
m以上になるまで#80のダイヤモンド砥石で研削し、
その上面にプラズマ溶射でAl2O3層(線熱膨張係数
7.8×10-6/℃)を200μmの厚さに形成して静
電チャックを作製した。Example 1 (1) Production of Electrostatic Chuck Fe--Ni--Mn based composition as an electric conductor was 63.385.
Using a low thermal expansion alloy made of Fe-36.00Ni-0.25Mn (linear thermal expansion coefficient: 6.5 to 7.5 × 10 −6 / ° C.), a disc of φ300 × t30 mm was prepared from the alloy, and the surface thereof was well formed. The surface roughness is 5μ at Rmax for close contact
m with a # 80 diamond grindstone until
An Al 2 O 3 layer (linear thermal expansion coefficient: 7.8 × 10 −6 / ° C.) was formed to a thickness of 200 μm on the upper surface by plasma spraying to produce an electrostatic chuck.
【0019】(2)評価 得られた静電チャックに3kVの直流電圧を印加し、A
l2O3層が密着しているかどうかを調べた。その結果、
直流電圧を印加しても電導体とAl2O3層との間で放電
は発生せず、Al2O3層の絶縁破壊は認めらず、Al2
O3層は強固に密着していた。(2) Evaluation A DC voltage of 3 kV was applied to the obtained electrostatic chuck,
It was examined whether or not the l 2 O 3 layer was in close contact. as a result,
Discharge between the conductor and the Al 2 O 3 layer even by applying a DC voltage is not generated, Razz observed breakdown of the Al 2 O 3 layer, Al 2
The O 3 layer was firmly adhered.
【0020】(実施例2)実施例1で用いた低熱膨張合
金を基台として用い、その表面を同様によく密着するた
めに表面粗さがRmaxで5μm以上になるまで#80
のダイヤモンド砥石で研削し、その上面にプラズマ溶射
でAl2O3層を200μmの厚さに形成し、その上面に
プラズマ溶射でタングステンからなる電極を形成し、さ
らにその上面にプラズマ溶射でAl2O3層を200μm
の厚さに形成して静電チャックを作製した。得られた静
電チャックを実施例1と同様に評価した。その結果、実
施例1と同様直流電圧を印加しても電導体とAl2O3層
との間で放電は発生せず、Al2O3層の絶縁破壊は認め
らず、Al2O3層は強固に密着していた。このことは、
実施例1を含めて述べると、本発明の静電チャックであ
れば、絶縁層の電導体または基台への密着性が極めて優
れていることを示している。(Embodiment 2) The low thermal expansion alloy used in Embodiment 1 was used as a base. In order to make the surface of the low thermal expansion alloy adhere well, the surface roughness was reduced to # 80 until the surface roughness became 5 μm or more in Rmax.
Of ground with a diamond grindstone to form a the Al 2 O 3 layer by plasma spraying on the upper surface to a thickness of 200 [mu] m, to form an electrode made of tungsten plasma spraying on the top surface thereof, further Al 2 by plasma spraying on the upper surface 200 μm O 3 layer
To form an electrostatic chuck. The obtained electrostatic chuck was evaluated in the same manner as in Example 1. As a result, even when applying the same DC voltage as in Example 1 does not occur in discharge between the conductor and the Al 2 O 3 layer, Razz observed breakdown of the Al 2 O 3 layer, Al 2 O 3 The layers were tightly adhered. This means
The description including Example 1 indicates that the electrostatic chuck of the present invention has extremely excellent adhesion of the insulating layer to the conductor or the base.
【0021】(比較例1) (1)静電チャックの作製 実施例1に用いた低熱膨張合金の代わりにアルミニウム
合金(線熱膨張係数12.9×10-6/℃)を用いた他
は実施例2同様に静電チャックを作製し、評価した。そ
の結果、Al2O3層は電圧を上昇中に絶縁破壊を受け基
台より剥がれてしまった(Comparative Example 1) (1) Production of Electrostatic Chuck Except that an aluminum alloy (linear thermal expansion coefficient: 12.9 × 10 −6 / ° C.) was used instead of the low thermal expansion alloy used in Example 1. An electrostatic chuck was manufactured and evaluated in the same manner as in Example 2. As a result, the Al 2 O 3 layer was separated from the base due to dielectric breakdown while increasing the voltage.
【0022】[0022]
【発明の効果】以上の通り、本発明にかかる静電チャッ
クであれば、電導体または基台と絶縁層との密着性が極
めて優れた静電チャックとすることができるようになっ
た。このことにより、絶縁層が剥がれるようなことのな
い優れた静電チャックを提供することができるようにな
った。As described above, with the electrostatic chuck according to the present invention, an electrostatic chuck having extremely excellent adhesion between the conductor or the base and the insulating layer can be obtained. As a result, it has become possible to provide an excellent electrostatic chuck in which the insulating layer does not peel off.
Claims (4)
チャックにおいて、該電導体が、低熱膨張合金からな
り、該絶縁層が、セラミックス層からなることを特徴と
する静電チャック。1. An electrostatic chuck comprising a conductor surface coated with an insulating layer, wherein the conductor is made of a low thermal expansion alloy, and the insulating layer is made of a ceramic layer.
る絶縁層を被覆してなる静電チャックにおいて、該基台
が、低熱膨張合金からなり、該絶縁層が、セラミックス
層からなることを特徴とする静電チャック。2. An electrostatic chuck comprising an insulating layer having an electrode formed on the upper surface of a base, wherein the base is made of a low thermal expansion alloy, and the insulating layer is made of a ceramic layer. An electrostatic chuck characterized in that:
記絶縁層と同等であることを特徴とする請求項1または
2記載の静電チャック。3. The electrostatic chuck according to claim 1, wherein the low thermal expansion alloy has a linear thermal expansion coefficient equal to that of the insulating layer.
系合金からなることを特徴とする請求項1乃至3記載の
静電チャック。4. The low thermal expansion alloy comprises Fe—Ni—Mn.
4. The electrostatic chuck according to claim 1, wherein the electrostatic chuck is made of a system alloy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001087281A JP2002289676A (en) | 2001-03-26 | 2001-03-26 | Electrostatic chuck |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001087281A JP2002289676A (en) | 2001-03-26 | 2001-03-26 | Electrostatic chuck |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2002289676A true JP2002289676A (en) | 2002-10-04 |
Family
ID=18942548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001087281A Pending JP2002289676A (en) | 2001-03-26 | 2001-03-26 | Electrostatic chuck |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002289676A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7142405B2 (en) | 2002-12-19 | 2006-11-28 | Nhk Spring Co., Ltd. | Electrostatic chuck and production method therefor |
US10561470B2 (en) | 2013-03-15 | 2020-02-18 | Intuitive Surgical Operations, Inc. | Software configurable manipulator degrees of freedom |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07176603A (en) * | 1993-12-16 | 1995-07-14 | Nissin Electric Co Ltd | Board holder |
JPH0969554A (en) * | 1995-08-31 | 1997-03-11 | Tocalo Co Ltd | Electrostatic chuck member and production thereof |
JPH09205134A (en) * | 1996-01-23 | 1997-08-05 | Souzou Kagaku:Kk | Electrostatic chuck |
JPH11111827A (en) * | 1997-10-08 | 1999-04-23 | Tokyo Electron Ltd | Holding device and processing device mounting the same |
JPH11340203A (en) * | 1998-05-25 | 1999-12-10 | Hitachi Ltd | Vacuum treatment apparatus and treatment stage |
JP2000183145A (en) * | 1998-12-18 | 2000-06-30 | Sony Corp | Wafer stage and vacuum heat treatment apparatus |
JP2002217082A (en) * | 2001-01-12 | 2002-08-02 | Nikon Corp | Stage system and aligner |
-
2001
- 2001-03-26 JP JP2001087281A patent/JP2002289676A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07176603A (en) * | 1993-12-16 | 1995-07-14 | Nissin Electric Co Ltd | Board holder |
JPH0969554A (en) * | 1995-08-31 | 1997-03-11 | Tocalo Co Ltd | Electrostatic chuck member and production thereof |
JPH09205134A (en) * | 1996-01-23 | 1997-08-05 | Souzou Kagaku:Kk | Electrostatic chuck |
JPH11111827A (en) * | 1997-10-08 | 1999-04-23 | Tokyo Electron Ltd | Holding device and processing device mounting the same |
JPH11340203A (en) * | 1998-05-25 | 1999-12-10 | Hitachi Ltd | Vacuum treatment apparatus and treatment stage |
JP2000183145A (en) * | 1998-12-18 | 2000-06-30 | Sony Corp | Wafer stage and vacuum heat treatment apparatus |
JP2002217082A (en) * | 2001-01-12 | 2002-08-02 | Nikon Corp | Stage system and aligner |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7142405B2 (en) | 2002-12-19 | 2006-11-28 | Nhk Spring Co., Ltd. | Electrostatic chuck and production method therefor |
US10561470B2 (en) | 2013-03-15 | 2020-02-18 | Intuitive Surgical Operations, Inc. | Software configurable manipulator degrees of freedom |
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