JP2002287325A5 - - Google Patents

Download PDF

Info

Publication number
JP2002287325A5
JP2002287325A5 JP2001091340A JP2001091340A JP2002287325A5 JP 2002287325 A5 JP2002287325 A5 JP 2002287325A5 JP 2001091340 A JP2001091340 A JP 2001091340A JP 2001091340 A JP2001091340 A JP 2001091340A JP 2002287325 A5 JP2002287325 A5 JP 2002287325A5
Authority
JP
Japan
Prior art keywords
processing
mask
processing medium
workpiece
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001091340A
Other languages
Japanese (ja)
Other versions
JP2002287325A (en
JP3921953B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2001091340A priority Critical patent/JP3921953B2/en
Priority claimed from JP2001091340A external-priority patent/JP3921953B2/en
Publication of JP2002287325A publication Critical patent/JP2002287325A/en
Publication of JP2002287325A5 publication Critical patent/JP2002287325A5/ja
Application granted granted Critical
Publication of JP3921953B2 publication Critical patent/JP3921953B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Claims (14)

加工装置にセットされ、被加工体に対する加工効果が蓄積される加工媒体の透過量を制御可能なマスクにおいて、
第一の透過率を有する第一の層と第二の透過率を有する第二の層より構成され、前記第一の層及び第二の層のパターンの組み合わせにより3段階に前記加工媒体の透過量を制御可能な3値マスクであって、
前記第一の層及び第二の層には、前記加工装置、前記被加工体および前記加工媒体の少なくとも何れかによって定まる最小分解能より小さい面積単位のドットのオン・オフの面積比率で前記加工媒体の透過量を制御するような異なるパターンが形成されていることを特徴とする3値マスク。
In a mask that is set in a processing apparatus and can control the transmission amount of a processing medium in which processing effects on a workpiece are accumulated,
A first layer having a first transmittance and a second layer having a second transmittance are transmitted through the processing medium in three stages by a combination of the patterns of the first layer and the second layer. A ternary mask with controllable quantity,
In the first layer and the second layer, the processing medium has an on / off area ratio of dots in an area unit smaller than a minimum resolution determined by at least one of the processing apparatus, the workpiece, and the processing medium. A ternary mask characterized in that a different pattern is formed so as to control the amount of transmission.
加工装置にセットされ、被加工体に対する加工効果が蓄積される加工媒体の透過量を制御可能なマスクにおいて、
第一の透過率を有する第一の層から、同様に第nの透過率を有する第nの層までの複数の層より構成され、前記第一の層から第nの層のパターンの組み合わせによりn以上の段階に前記加工媒体の透過量を制御可能な多値マスクであって、
前記第一から第nまでの各層には、前記加工装置、前記被加工体および前記加工媒体の少なくとも何れかによって定まる最小分解能より小さい面積単位のドットのオン・オフの面積比率で前記加工媒体の透過量を制御するような異なるパターンが形成されていることを特徴とする多値マスク。
In a mask that is set in a processing apparatus and can control the transmission amount of a processing medium in which processing effects on a workpiece are accumulated,
It is composed of a plurality of layers from the first layer having the first transmittance to the nth layer having the nth transmittance, and by a combination of patterns of the first layer to the nth layer. a multi-value mask capable of controlling the transmission amount of the processing medium in stages of n or more,
In each of the first to nth layers, the processing medium has a dot on / off area ratio of an area unit smaller than a minimum resolution determined by at least one of the processing apparatus, the workpiece, and the processing medium. A multi-value mask in which different patterns for controlling the amount of transmission are formed.
加工装置にセットされ、被加工体に対する加工効果が蓄積される加工媒体の透過量を制御可能なマスクにおいて、
離散的な複数の段階をもって、あるいは段階なく連続して前記加工媒体の透過量を微小な領域ごとに制御可能な多値マスクであって、
前記加工媒体の透過量をある値Aからある値Bまでの第一の範囲で制御する第一の領域と、ある値Cからある値Dまでの第二の範囲で制御する第二の領域とより構成される多値マスク。
In a mask that is set in a processing apparatus and can control the transmission amount of a processing medium in which processing effects on a workpiece are accumulated,
A multi-value mask capable of controlling the transmission amount of the processing medium for each minute region with a plurality of discrete steps or continuously without steps,
A first region for controlling the permeation amount of the processing medium in a first range from a certain value A to a certain value B, and a second region for controlling in a second range from a certain value C to a certain value D; A multi-value mask composed of
加工装置にセットされ、被加工体に対する加工効果が蓄積される加工媒体の透過量を2段階に制御可能な2値マスクであって、
前記加工装置、前記被加工体および前記加工媒体の少なくとも何れかによって定まる最小分解能より小さい面積単位のドットのオン・オフの面積比率で前記加工媒体の透過量を制御するようなパターンである第一の領域と、
前記加工媒体を一様に透過または遮蔽するようなパターンである第二の領域より構成される2値マスク。
A binary mask that is set in a processing apparatus and that can control the transmission amount of a processing medium in which processing effects on a workpiece are accumulated in two stages,
The pattern is such that the transmission amount of the processing medium is controlled by the on / off area ratio of dots in an area unit smaller than the minimum resolution determined by at least one of the processing apparatus, the workpiece, and the processing medium. Area of
A binary mask composed of a second region having a pattern that uniformly transmits or shields the processing medium.
請求項1または請求項2または請求項4において、前記ドットのオン・オフはディザパターン法または誤差拡散法により決定されている2値または3値または多値マスク。5. The binary, ternary, or multi-value mask according to claim 1, wherein the dots are turned on / off by a dither pattern method or an error diffusion method. 請求項1または請求項2または請求項4において、前記ドットの面積比率は、該ドットの面積を変化させることで決定されている2値または3値または多値マスク。5. The binary, ternary, or multi-value mask according to claim 1, wherein the dot area ratio is determined by changing the dot area. 請求項1または請求項2または請求項3または請求項4において、前記被加工体は光感応性部材であり、前記加工媒体は光であり、前記加工装置は露光装置である2値または3値または多値マスク。5. The binary or ternary structure according to claim 1, wherein the workpiece is a photosensitive member, the processing medium is light, and the processing apparatus is an exposure apparatus. Or multi-value mask. 請求項7において、前記露光装置の光源の波長λ、前記露光装置の結像系のレンズの開口NAとすると、前記ドットのピッチPは、次の式を満足する2値または3値または多値マスク。
P<λ/NA
8. The dot pitch P is binary, ternary, or multivalue satisfying the following equation, where the wavelength λ of the light source of the exposure apparatus and the aperture NA of the lens of the imaging system of the exposure apparatus are defined in claim 7. mask.
P <λ / NA
加工装置にセットされ、被加工体に対する加工効果が蓄積される加工媒体の透過量を3段階に制御可能な3値マスクの製造方法であって、
所望の第一の加工を行う前記加工媒体の透過量を、前記加工装置、前記被加工体および前記加工媒体の少なくとも何れかによって定まる最小分解能より小さい面積単位のドットのオン・オフの面積比率に変換し、それらのドットを当該3値マスクの第一の層に形成する工程と、
所望の第二の加工を行う前記加工媒体の透過量を、前記加工装置、前記被加工体および前記加工媒体の少なくとも何れかによって定まる最小分解能より小さい面積単位のドットのオン・オフの面積比率に変換し、それらのドットを当該3値マスクの第二の層に形成する工程とを有する3値マスクの製造方法。
A method of manufacturing a ternary mask, which is set in a processing apparatus and capable of controlling the transmission amount of a processing medium in which processing effects on a workpiece are accumulated in three stages,
The permeation amount of the processing medium for performing the desired first processing is set to an on / off area ratio of dots in an area unit smaller than the minimum resolution determined by at least one of the processing apparatus, the workpiece, and the processing medium. Converting and forming the dots in the first layer of the ternary mask;
The permeation amount of the processing medium for performing the desired second processing is set to an on / off area ratio of dots in an area unit smaller than the minimum resolution determined by at least one of the processing apparatus, the workpiece, and the processing medium. Converting and forming the dots in the second layer of the ternary mask.
加工装置にセットされ、被加工体に対する加工効果が蓄積される加工媒体の透過量をn以上の離散的な段階をもって多段階に制御可能な多値マスクの製造方法であって、
所望の第nの微細加工を行う前記加工媒体の透過量を、前記加工装置、前記被加工体および前記加工媒体の少なくとも何れかによって定まる最小分解能より小さい面積単位のドットのオン・オフの面積比率に変換し、それらのドットを当該多値マスクの第nの層に形成する工程を有する多値マスクの製造方法。
A manufacturing method of a multi-value mask set in a processing apparatus and capable of controlling the permeation amount of a processing medium in which processing effects on a workpiece are accumulated in multiple stages with discrete steps of n or more,
An on / off area ratio of dots in an area unit smaller than a minimum resolution determined by a permeation amount of the processing medium for performing desired n-th fine processing is determined by at least one of the processing apparatus, the workpiece, and the processing medium. And a method of manufacturing the multi-value mask, which includes the step of forming the dots in the n-th layer of the multi-value mask.
加工装置にセットされ、被加工体に対する加工効果が蓄積される加工媒体の透過量を多段階あるいは段階なく連続して前記加工媒体の透過量を微小な領域ごとに制御可能な多値マスクの製造方法であって、
所望の第一の微細加工を行う前記加工媒体の透過量を、 前記加工媒体の透過量をある値Aからある値Bまでの第一の範囲の値に変換し、当該多値マスクに形成する工程と、
所望の第二の微細加工を行う前記加工媒体の透過量を、 前記加工媒体の透過量をある値Cからある値Dまでの第二の範囲の値に変換し、当該多値マスクに形成する工程に形成する工程とを有する多値マスクの製造方法。
Manufacture of a multi-value mask that can be set in a processing apparatus and can control the permeation amount of the processing medium for each minute region continuously in multiple steps or without any step in which the processing effect on the workpiece is accumulated A method,
The permeation amount of the processing medium for performing the desired first fine processing is converted into a value in a first range from a certain value A to a certain value B, and formed on the multi-value mask. Process,
The permeation amount of the processing medium for performing a desired second fine processing is converted into a second range of values from a certain value C to a certain value D to form the multi-value mask. The manufacturing method of a multi-value mask which has the process formed in a process.
加工装置にセットされ、被加工体に対する加工効果が蓄積される加工媒体の透過量を2段階に制御可能な2値マスクの製造方法でであって、
所望の第一の微細加工を行う前記加工媒体の透過量を、前記加工装置、前記被加工体および前記加工媒体の少なくとも何れかによって定まる最小分解能より小さい面積単位のドットのオン・オフの面積比率に変換し、それらのドットを当該2値マスクの第一の領域に形成する工程と、
所望の第二の微細加工を行う前記加工媒体の透過量を、 前記加工媒体を一様に透過または遮蔽するようなパターンに変換し、それらのパターンを当該2値マスクの第二の領域に形成する工程とを有する2値マスクの製造方法。
A method of manufacturing a binary mask, which is set in a processing apparatus and can control the transmission amount of a processing medium in which processing effects on a workpiece are accumulated in two stages,
The on / off area ratio of dots in an area unit smaller than the minimum resolution determined by at least one of the processing apparatus, the workpiece, and the processing medium, the permeation amount of the processing medium for performing a desired first fine processing And forming the dots in the first region of the binary mask;
The transmission amount of the processing medium for performing desired second fine processing is converted into a pattern that uniformly transmits or shields the processing medium, and these patterns are formed in the second region of the binary mask. A method for manufacturing a binary mask.
請求項1または請求項2または請求項3または請求項4の前記マスクを前記加工装置にセットして前記被加工体を加工する工程を有する微細構造体の製造方法。A method for manufacturing a microstructure having the step of processing the workpiece by setting the mask according to claim 1, claim 2, claim 3 or claim 4 to the processing apparatus. 偏光板、前記偏光板と協同して光をオン・オフする液晶層、前記液晶層を駆動する電極、前記電極に電圧を印加して前記液晶層を駆動する駆動回路、外部からの入射光を反射し、該反射光をもって液晶層を内面から照明する反射層、前記反射層を貫通して前記電極と前記駆動回路を接続するコンタクトホールを有する反射型液晶ディスプレイにおいて、
請求項1または請求項2または請求項3または請求項4の前記マスクを前記加工装置にセットして前記反射層及びコンタクトホールを形成することを特徴とする液晶ディスプレイの製造方法。
A polarizing plate, a liquid crystal layer for turning on / off light in cooperation with the polarizing plate, an electrode for driving the liquid crystal layer, a driving circuit for driving the liquid crystal layer by applying a voltage to the electrode, and incident light from outside In a reflective liquid crystal display having a reflective layer that reflects and illuminates the liquid crystal layer from the inner surface with the reflected light, and a contact hole that penetrates the reflective layer and connects the electrode and the drive circuit,
5. A method of manufacturing a liquid crystal display, comprising: setting the mask according to claim 1 or claim 2 or claim 3 or claim 4 to the processing apparatus to form the reflective layer and the contact hole.
JP2001091340A 2001-03-27 2001-03-27 Mask, mask manufacturing method, microstructure manufacturing method, and liquid crystal display manufacturing method Expired - Fee Related JP3921953B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001091340A JP3921953B2 (en) 2001-03-27 2001-03-27 Mask, mask manufacturing method, microstructure manufacturing method, and liquid crystal display manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001091340A JP3921953B2 (en) 2001-03-27 2001-03-27 Mask, mask manufacturing method, microstructure manufacturing method, and liquid crystal display manufacturing method

Publications (3)

Publication Number Publication Date
JP2002287325A JP2002287325A (en) 2002-10-03
JP2002287325A5 true JP2002287325A5 (en) 2005-03-03
JP3921953B2 JP3921953B2 (en) 2007-05-30

Family

ID=18945970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001091340A Expired - Fee Related JP3921953B2 (en) 2001-03-27 2001-03-27 Mask, mask manufacturing method, microstructure manufacturing method, and liquid crystal display manufacturing method

Country Status (1)

Country Link
JP (1) JP3921953B2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4515012B2 (en) * 2002-08-07 2010-07-28 大日本印刷株式会社 Pattern data production method and photomask
JP5031173B2 (en) * 2003-03-26 2012-09-19 大日本印刷株式会社 IMAGING DEVICE AND METHOD FOR FORMING MICRO LENS IN IMAGING DEVICE
JP5200439B2 (en) * 2006-07-21 2013-06-05 大日本印刷株式会社 Manufacturing method of color filter
JP5228390B2 (en) * 2006-07-21 2013-07-03 大日本印刷株式会社 Gradation mask
JP5673718B2 (en) * 2006-07-21 2015-02-18 大日本印刷株式会社 Gradation mask
JP2009237419A (en) * 2008-03-28 2009-10-15 Hoya Corp Multi-gradation photomask, manufacturing method thereof, and pattern transfer method
JP2010020146A (en) * 2008-07-11 2010-01-28 Fujifilm Corp Color filter, manufacturing method therefor, and liquid crystal display device
JP5510865B2 (en) * 2009-03-25 2014-06-04 住友化学株式会社 Anti-glare treatment method, anti-glare film manufacturing method and mold manufacturing method
JP5671788B2 (en) * 2009-07-13 2015-02-18 凸版印刷株式会社 Photomask for color filter substrate and color filter substrate
CN102054279A (en) * 2009-11-02 2011-05-11 住友化学株式会社 Generating method of random patterns
JP2011118328A (en) * 2009-11-02 2011-06-16 Sumitomo Chemical Co Ltd Method for forming random pattern

Similar Documents

Publication Publication Date Title
US7271877B2 (en) Method and apparatus for maskless photolithography
JP5181317B2 (en) Reflective liquid crystal display device and manufacturing method thereof
DE10228774B4 (en) Method for forming fine patterns in semiconductor devices
JP2002287325A5 (en)
KR20080037702A (en) Photomask having gradation sequence and method for manufacturing same
DE10320131B4 (en) Method for producing a diffractive optical element
KR101071471B1 (en) Photomask blank and photomask, and their manufacturing method
CN111742248B (en) Diffusion plate
KR100990074B1 (en) Inclined exposure lithography system
US5679483A (en) Embedded phase shifting photomasks and method for manufacturing same
JP2002311565A5 (en)
TW202210883A (en) Manufacturing method of optical element, optical element and apparatus for manufacturing optical element
JP2005210112A (en) Exposing method and device thereof
JP2003215574A (en) Reflective liquid crystal display
JP2007010845A (en) Pixel forming method and color filter
US6773870B2 (en) Process of manufacturing a diffusive direct reflector using gray tone exposure
JPWO2020153319A1 (en) Diffusion plate
WO2004001508A2 (en) Method and apparatus for maskless photolithography
JP2003014915A (en) Optical element with dammann grating
JP4968999B2 (en) Manufacturing method of three-dimensional structure
US20200361165A1 (en) Optical lens with laser induced periodic surface structure
US20050019701A1 (en) Method for manufacturing a light guide plate mold
CN101387827B (en) Half-tone mask plate and its manufacture method
JP2006058720A (en) Microlens and its manufacturing method
TWI755963B (en) Method and apparatus for forming three-dimensional micro-structure