JP2002284596A - Quartz glass crucible with inner surface partially coated with synthetic quartz - Google Patents
Quartz glass crucible with inner surface partially coated with synthetic quartzInfo
- Publication number
- JP2002284596A JP2002284596A JP2001091788A JP2001091788A JP2002284596A JP 2002284596 A JP2002284596 A JP 2002284596A JP 2001091788 A JP2001091788 A JP 2001091788A JP 2001091788 A JP2001091788 A JP 2001091788A JP 2002284596 A JP2002284596 A JP 2002284596A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- quartz glass
- quartz
- synthetic quartz
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ルツボの側壁内表
面部分または底部内表面部分を合成石英ガラスによって
形成すると共に残余の内表面部分を天然石英ガラスによ
って形成することにより、引き上げ条件に対応してルツ
ボを選択して使用することができるシリコン単結晶引上
用石英ガラスルツボに関する。The present invention relates to a crucible in which the inner surface portion or the inner surface portion of the crucible is formed of synthetic quartz glass and the remaining inner surface portion is formed of natural quartz glass. The present invention relates to a quartz glass crucible for pulling a silicon single crystal, which can select and use a crucible.
【０００２】[0002]
【従来の技術】シリコン単結晶の引き上げ工程におい
て、シリコン融液を入れる石英ガラスルツボが使用され
ている。この石英ガラスルツボはシリコン融液に不純物
が混入しないように高純度であることが求められ、さら
にシリコンの融点を上回る高温下で使用されるため、十
分な耐熱強度を有することが必要である。この石英ガラ
スルツボの原料には天然石英と合成石英が用いられてお
り、一般に天然石英は合成石英より純度は低いが耐熱強
度に優れており、合成石英は天然石英よりも純度が高
い。そこで、ルツボの外側部分を天然石英で形成して高
温下でのルツボ強度を高め、一方、シリコン融液に接触
するルツボ内側部分は合成石英を用いて形成した石英ガ
ラスルツボが知られている（特開昭５５−９４０９８号
公報）。2. Description of the Related Art In a process of pulling a silicon single crystal, a quartz glass crucible for containing a silicon melt is used. This quartz glass crucible is required to have high purity so that impurities are not mixed into the silicon melt, and since it is used at a high temperature exceeding the melting point of silicon, it is necessary to have sufficient heat resistance. Natural quartz and synthetic quartz are used as raw materials for the quartz glass crucible. In general, natural quartz is lower in purity than synthetic quartz but is superior in heat resistance, and synthetic quartz has higher purity than natural quartz. Therefore, a quartz glass crucible is known in which the outer portion of the crucible is formed of natural quartz to increase the crucible strength under a high temperature, while the inner portion of the crucible in contact with the silicon melt is formed of synthetic quartz ( JP-A-55-94098).
【０００３】[0003]
【発明が解決しようとする課題】ルツボの外側部分に天
然石英を用い、内側部分に合成石英を用いた従来の石英
ガラスルツボは、内側の全面が合成石英を原料として形
成されている。一方、シリコン単結晶の引き上げ工程に
おいて、この石英ガラスルツボは高温下で使用される
が、ルツボの形状や加熱条件によって、ルツボ各部分の
温度分布が異なるので内表面の溶損や失透の状態はそれ
ぞれ必ずしも同一ではない。このため、ルツボ内表面の
全体を合成石英によって形成したルツボは局部的に内表
面部分の溶損程度が大きくなり、これが結晶の乱れを引
き起こし、単結晶化率(収率)を低下したり酸素溶解量
(Ｏｉ)を増大する原因になる。近年、シリコン単結晶の
引上げに用いる石英ルツボは次第に大型化しているが、
ルツボが大型化して熱負荷が大きくなるのに伴いこのよ
うな問題が一層顕著になる傾向がある。A conventional quartz glass crucible in which natural quartz is used for the outer portion of the crucible and synthetic quartz is used for the inner portion, the entire inner surface is formed using synthetic quartz as a raw material. On the other hand, in the process of pulling a silicon single crystal, this quartz glass crucible is used at a high temperature. Are not necessarily the same. For this reason, in the crucible in which the entire inner surface of the crucible is made of synthetic quartz, the degree of erosion of the inner surface part locally becomes large, which causes crystal disorder and lowers the single crystallization rate (yield) or decreases the oxygen content. Dissolution amount
(Oi). In recent years, quartz crucibles used for pulling silicon single crystals have gradually become larger,
Such problems tend to become more pronounced as the crucible becomes larger and the heat load increases.
【０００４】本発明は、従来の石英ガラスルツボにおけ
る上記問題を解決したものであり、ルツボの側壁内表面
部分または底部内表面部分を合成石英ガラスによって形
成する一方、残余の内表面部分を天然石英ガラスによっ
て形成することにより、加熱条件に対応してルツボを選
択して使用することができるようにし、シリコン単結晶
への酸素溶解量が少なく、かつ優れた単結晶化率を達成
することができる石英ガラスルツボを提供するものであ
る。The present invention solves the above-mentioned problem in the conventional quartz glass crucible, in which the inner surface of the side wall or the inner surface of the bottom of the crucible is made of synthetic quartz glass, while the remaining inner surface is made of natural quartz. By being formed of glass, the crucible can be selected and used according to the heating conditions, the amount of oxygen dissolved in the silicon single crystal is small, and an excellent single crystallization rate can be achieved. A quartz glass crucible is provided.
【０００５】[0005]
【課題を解決する手段】すなわち、本発明は以下の構成
からなる石英ガラスルツボに関する。 （１）シリコン単結晶の引き上げに用いる石英ガラスル
ツボにおいて、ルツボの側壁内表面部分または底部内表
面部分が合成石英ガラスによって形成されており、残余
の内周面部分が天然石英によって形成されていることを
特徴とする石英ガラスルツボ。 （２）シリコン単結晶の引き上げに用いる石英ガラスル
ツボにおいて、ルツボの側壁部から湾曲部を含む範囲の
内表面部分が合成石英ガラスによって形成されており、
底部内表面部分が天然石英ガラスによって形成されてい
ることを特徴とする石英ガラスルツボ。 （３）シリコン単結晶の引き上げに用いる石英ガラスル
ツボにおいて、ルツボの底部から湾曲部を含む範囲の内
表面部分が合成石英ガラスによって形成されており、側
壁内表面部分が天然石英ガラスによって形成されている
ことを特徴とする石英ガラスルツボ。That is, the present invention relates to a quartz glass crucible having the following constitution. (1) In a quartz glass crucible used for pulling a silicon single crystal, the inner surface of the side wall or the inner surface of the bottom of the crucible is made of synthetic quartz glass, and the remaining inner surface is made of natural quartz. A quartz glass crucible characterized in that: (2) In a quartz glass crucible used for pulling a silicon single crystal, an inner surface portion of a range including a curved portion from a side wall portion of the crucible is formed of synthetic quartz glass;
A quartz glass crucible characterized in that a bottom inner surface portion is formed of natural quartz glass. (3) In a quartz glass crucible used for pulling a silicon single crystal, an inner surface portion in a range including a curved portion from the bottom of the crucible is formed of synthetic quartz glass, and an inner surface portion of a side wall is formed of natural quartz glass. A quartz glass crucible.
【０００６】[0006]
【発明の実施の形態】以下、本発明を図面に示す実施形
態に基づいて詳細に説明する。本発明に係る石英ガラス
ルツボの構成例を図１および図２に示す。図示するよう
に、本発明の石英ガラスルツボは、シリコン単結晶の引
き上げに用いる石英ガラスルツボにおいて、ルツボの側
壁内表面部分または底部内表面部分を合成石英ガラスに
よって形成し、残余の内周面部分を天然石英によって形
成したことを特徴とする。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings. FIGS. 1 and 2 show a configuration example of a quartz glass crucible according to the present invention. As shown in the figure, the quartz glass crucible of the present invention is a quartz glass crucible used for pulling a silicon single crystal, wherein an inner surface portion or a bottom inner surface portion of the crucible is formed of synthetic quartz glass, and a remaining inner peripheral portion is formed. Is formed of natural quartz.
【０００７】具体的には、図１の石英ガラスルツボは、
ルツボの側壁部１０から湾曲部１１を含む範囲の内表面
部分が合成石英ガラス２０によって形成されており、底
部１２の内表面部分が天然石英ガラス２２によって形成
されている。図２の石英ガラスルツボは、ルツボの底部
１２から湾曲部１１を含む範囲の内表面が合成石英ガラ
ス２０によって形成されており、側壁１０の内表面部分
が天然石英ガラス２２によって形成されている。Specifically, the quartz glass crucible of FIG.
The inner surface portion of the crucible from the side wall portion 10 to the region including the curved portion 11 is formed of synthetic quartz glass 20, and the inner surface portion of the bottom portion 12 is formed of natural quartz glass 22. In the quartz glass crucible of FIG. 2, the inner surface of the range including the curved portion 11 from the bottom 12 of the crucible is formed of synthetic quartz glass 20, and the inner surface portion of the side wall 10 is formed of natural quartz glass 22.
【０００８】このように、本発明の石英ガラスルツボは
ルツボの側壁部１０または底部１２の何れかの内表面部
分が合成石英によって形成されている。なお、内表面部
分とはルツボ内表面から適当な厚さを有する部分を云
い、通常は溶損深さ(概ね０.７〜１mm)より僅かに厚い
部分であり、その縁部は外側の天然石英部分と段差を生
じないように、次第に薄く形成すると共に天然石英を厚
くすることにより肉厚を一定にするのが好ましい。ま
た、ルツボ内表面部分のうち合成石英で形成する範囲
は、ルツボの側壁部１０または底部１２と共に側壁部下
端から底部上端に至る湾曲部１１を各々含むものでも良
い。すなわち、側壁部１０から湾曲部１１を含む範囲で
も良く、あるいは底部１２から湾曲部１１を含む範囲で
も良い。なお、この湾曲部１１を含む範囲とは、合成石
英で覆われた湾曲部１１の上端または下端がルツボ側壁
部１０または底部１２に多少入り込む状態のものをも含
む。As described above, in the quartz glass crucible of the present invention, the inner surface portion of either the side wall portion 10 or the bottom portion 12 of the crucible is formed of synthetic quartz. The inner surface portion is a portion having an appropriate thickness from the inner surface of the crucible, which is usually a portion slightly thicker than the erosion depth (approximately 0.7 to 1 mm), and the edge of which is the outer natural stone. It is preferable that the thickness is made gradually smaller and the natural quartz is made thicker so that the wall thickness becomes constant so as not to cause a step with the English part. Further, the range formed of synthetic quartz in the crucible inner surface portion may include the curved portion 11 extending from the lower end of the side wall portion to the upper end of the bottom portion together with the side wall portion 10 or the bottom portion 12 of the crucible. That is, a range including the curved portion 11 from the side wall portion 10 or a range including the curved portion 11 from the bottom portion 12 may be used. The range including the curved portion 11 includes a range in which the upper end or the lower end of the curved portion 11 covered with synthetic quartz slightly enters the crucible side wall portion 10 or the bottom portion 12.
【０００９】ここで、ルツボの側壁部とは上部開口部分
から湾曲部上端に至る部分を云い、湾曲部とはルツボ側
壁が任意の曲率で内側に傾斜してルツボ底部に連なる部
分を云う。またルツボ底部とは湾曲部の下側部分を云
い、具体的にはルツボの下側中央部において、概ねルツ
ボの口径Ｒに対して０.５Ｒ〜０.８Ｒの範囲である。因
みに、側壁部はいわゆる直胴部分であるが、上部開口部
分と同一口径を有する場合に限らず、上方に向かって外
開きの傾斜を有する場合も含む。湾曲部の曲率半径ｒと
その角度θ（図参照）は底部に対応する範囲で任意であ
り、湾曲部１１および底部１２の大きさや形状、湾曲状
態も限定されない。例えば、丸底ルツボおよび平底ルツ
ボの何れにおいても、ルツボの底部が０.５Ｒ〜０.８Ｒ
の範囲であるとき、その外側から湾曲部を経てルツボ側
壁部全面に至る内表面部分を合成石英ガラスとしても良
く、または、この範囲のルツボ底部内表面部分を合成石
英ガラスとし、その外側から湾曲部を経てルツボ側壁部
全面の内表面部分を天然石英ガラスとしても良い。ある
いは、０.５Ｒ〜０.８Ｒの範囲のルツボ底部と湾曲部を
合成石英ガラスとし、湾曲部の上側からルツボ側壁部全
面の内表面部分を天然石英ガラスとしても良い。Here, the side wall of the crucible refers to a portion extending from the upper opening to the upper end of the curved portion, and the curved portion refers to a portion in which the crucible side wall is inclined inward at an arbitrary curvature and continues to the crucible bottom. The bottom of the crucible refers to the lower portion of the curved portion. Specifically, at the lower central portion of the crucible, it is approximately in the range of 0.5R to 0.8R with respect to the diameter R of the crucible. Incidentally, the side wall portion is a so-called straight body portion, but is not limited to a case having the same diameter as the upper opening portion, and also includes a case having an outwardly open inclination upward. The radius of curvature r of the bending portion and its angle θ (see the figure) are arbitrary within a range corresponding to the bottom portion, and the size, shape, and bending state of the bending portion 11 and the bottom portion 12 are not limited. For example, in both the round bottom crucible and the flat bottom crucible, the bottom of the crucible is 0.5R to 0.8R.
When it is in the range, the inner surface portion extending from the outside to the entire crucible side wall portion through the curved portion may be made of synthetic quartz glass, or the inner surface portion of the crucible bottom portion in this range is made of synthetic quartz glass and curved from the outside. The inner surface portion of the entire crucible side wall portion through the portion may be made of natural quartz glass. Alternatively, the crucible bottom and the curved portion in the range of 0.5R to 0.8R may be made of synthetic quartz glass, and the inner surface of the entire crucible side wall from the upper side of the curved portion may be made of natural quartz glass.
【００１０】図１に示す構成例において、合成石英によ
って覆われない底面部分(天然石英部分)の範囲は、例え
ば、底面半径ｒ’の１／５程度以上であれば良い。ま
た、図２の構成例において、合成石英によって覆われる
底部および湾曲分の高さはシリコン融液が引き上げ後に
残留する液面程度の高さ以下であれば良い。概ね、この
高さは側壁部の高さの約１／３以下である。なお、合成
石英によって内表面を覆った部分の全体の肉厚と合成石
英を設けない部分の肉厚とは実質的に等しく形成するの
が好ましい。また、図１に示す石英ルツボの底部内表面
部分を形成する天然石英部分、および図２に示す石英ル
ツボの側壁内表面部分を形成する天然石英部分は何れの
場合もルツボの外側部分を形成する天然石英と一体に形
成することができる。In the configuration example shown in FIG. 1, the range of the bottom portion (natural quartz portion) which is not covered by the synthetic quartz may be, for example, about 1/5 or more of the bottom radius r '. Further, in the configuration example of FIG. 2, the height of the bottom portion and the curved portion covered by the synthetic quartz may be not more than the height of the liquid surface on which the silicon melt remains after being pulled up. Generally, this height is about 1/3 or less of the height of the side wall. Note that it is preferable that the entire thickness of the portion where the inner surface is covered with the synthetic quartz is substantially equal to the thickness of the portion where the synthetic quartz is not provided. In addition, the natural quartz portion forming the inner surface portion of the bottom of the quartz crucible shown in FIG. 1 and the natural quartz portion forming the inner surface portion of the side wall of the quartz crucible shown in FIG. 2 both form the outer portion of the crucible. It can be formed integrally with natural quartz.
【００１１】製造方法としては、例えば、回転モールド
法による場合、回転するモールドの内表面に天然石英粉
を所定厚さに堆積して、ルツボの外側部分の原形とし、
次いで、その内周部分または底面部分に限定して合成石
英粉を所定厚さに堆積し、このようにルツボ内周面を部
分的に原料石英粉の種類を変えて二層構造としたものを
アーク溶融等によって加熱することにより全体を一体に
ガラス化して石英ガラスルツボを得る。この加熱溶融の
際に石英紛層内部をモールド側から吸引し、脱気するこ
とにより、溶融ガラス層が実質的に気泡を含まない透明
ガラス層にすることができる。なお、ルツボの外周部分
はシリコン融液に接触しないので、強度および保温効果
を高めるために通常は気泡を多く含む不透明ガラス層に
形成される。この他に回転モールド法による製造法とし
ては、従来の方法で天然石英によって外周側のルツボを
形成した後に、ルツボ内側にアーク炎を挿入し、この炎
中に合成石英粉を投入してルツボ内表面に合成石英層を
形成して本発明の石英ガラスルツボを製造することがで
きる。As a manufacturing method, for example, in the case of a rotary molding method, natural quartz powder is deposited to a predetermined thickness on the inner surface of a rotating mold to form a prototype of an outer portion of a crucible,
Next, the synthetic quartz powder is deposited to a predetermined thickness limited to the inner peripheral portion or the bottom portion, and the inner peripheral surface of the crucible is partially changed into a two-layer structure by changing the kind of the raw material quartz powder. The whole is vitrified integrally by heating by arc melting or the like to obtain a quartz glass crucible. By suctioning and degassing the inside of the quartz powder layer from the mold side during this heating and melting, the molten glass layer can be made into a transparent glass layer substantially free of bubbles. Since the outer peripheral portion of the crucible does not come into contact with the silicon melt, the crucible is usually formed on an opaque glass layer containing many bubbles in order to enhance the strength and the heat retaining effect. In addition, as a manufacturing method by a rotary molding method, after forming a crucible on the outer peripheral side with natural quartz by a conventional method, an arc flame is inserted inside the crucible, and synthetic quartz powder is put into the flame and the inside of the crucible is formed. A quartz glass crucible of the present invention can be manufactured by forming a synthetic quartz layer on the surface.
【００１２】さらに、上記以外の製造方法としては、例
えば、ルツボの外形部分を天然石英によって半溶融状態
に形成し、合成石英によって予め筒型に形成した側壁内
表面部分をこの内側に嵌め合わせ、または、合成石英に
よって予め皿形に形成した底部内周面部分をルツボ外形
部分の底部に嵌め合わせ、半溶融状態またはガラス化し
た側壁内表面部分ないし底部内表面部分を外側の外形部
分と共に加熱溶融してガラス化し、一体化することによ
って本発明の石英ガラスルツボを得ることができる。Further, as a manufacturing method other than the above, for example, an outer portion of a crucible is formed in a semi-molten state by using natural quartz, and an inner surface portion of a side wall previously formed into a cylindrical shape by using synthetic quartz is fitted into the inside thereof. Alternatively, a bottom inner peripheral surface portion previously formed into a dish shape by synthetic quartz is fitted to the bottom of the crucible outer shape portion, and the semi-molten or vitrified side wall inner surface portion or the bottom inner surface portion is heated and melted together with the outer shape portion. Then, by vitrifying and integrating, the quartz glass crucible of the present invention can be obtained.
【００１３】[0013]
【実施例】以下、実施例によって本発明を具体的に示
す。なお、各例において使用した石英ガラスルツボの性
状は表１のとおりである。EXAMPLES The present invention will be specifically described below with reference to examples. Table 1 shows the properties of the quartz glass crucible used in each example.
【００１４】[0014]
【表１】 [Table 1]
【００１５】〔実施例１〕ルツボの側壁部に面する部分
にヒータを有する単結晶引き上げ装置に上記３種類（全
面合成石英ルツボ、全面天然石英ルツボ、底部合成石英
ルツボ）の石英ガラスルツボを設置して同条件下でシリ
コン単結晶の引き上げを行った。この結果を表２に示し
た。各数値は５回の平均値である。なお、底部合成石英
ルツボは図２に示す構成を有するものを用いた。表２に
示すように、内表面全体を合成石英で覆ったルツボは、
ルツボ側壁部および底部の失透面積は少ないものの、溶
損量が多く、従って単結晶化率が低い。また、全体を天
然石英によって形成したルツボは、溶損量は少ないが底
部の失透面積が大きく、単結晶化率が最も低い。一方、
底部内表面を合成石英で覆ったルツボ(本発明品)は、底
部と側壁部の失透面積および溶損量が全面天然石英のル
ツボと全面合成石英のルツボの中間であり、これらの総
合的な結果として最も単結晶化率が高い。[Example 1] The above three types of quartz glass crucibles (full synthetic quartz crucible, full natural quartz crucible, bottom synthetic quartz crucible) were installed in a single crystal pulling apparatus having a heater at the portion facing the side wall of the crucible. Then, a silicon single crystal was pulled under the same conditions. The results are shown in Table 2. Each numerical value is an average value of five times. The bottom synthetic quartz crucible having the configuration shown in FIG. 2 was used. As shown in Table 2, the crucible whose entire inner surface was covered with synthetic quartz,
Although the devitrification area of the crucible side wall and the bottom is small, the amount of erosion is large, and the single crystallization ratio is low. In addition, the crucible formed entirely of natural quartz has a small amount of erosion, but has a large devitrification area at the bottom and the lowest single crystallization ratio. on the other hand,
The crucible whose bottom inner surface is covered with synthetic quartz (the product of the present invention) has a devitrification area and a erosion amount of the bottom and the side wall which are intermediate between the whole natural quartz crucible and the whole synthetic quartz crucible. As a result, the single crystallization ratio is the highest.
【００１６】[0016]
【表２】 [Table 2]
【００１７】〔実施例２〕ルツボの底部に面する部分に
ヒータを有する単結晶引き上げ装置を用い、底部合成石
英ルツボに代えて側壁部を合成石英で覆ったルツボを用
いた他は実施例１と同様にしてシリコン単結晶の引き上
げを行った。この結果を表３に示した。各数値は５回の
平均値である。なお、側壁部合成石英ルツボは図１に示
す構成を有するものを用いた。表３に示すように、内表
面全体を合成石英で覆ったルツボは、ルツボ側壁部およ
び底部の失透面積は少ないものの、溶損量が多く、従っ
て単結晶化率が低い。また、全体を天然石英によって形
成したルツボは、溶損量は少ないが側壁部の失透面積が
大きく、単結晶化率が最も低い。一方、側壁部内表面を
合成石英で覆ったルツボ(本発明品)は、底部と側壁部の
失透面積および溶損量が全面天然石英のルツボと全面合
成石英のルツボの中間であり、これらの総合的な結果と
して最も単結晶化率が高い。Embodiment 2 A single crystal pulling apparatus having a heater at the portion facing the bottom of the crucible is used, and a crucible whose side walls are covered with synthetic quartz is used in place of the synthetic quartz crucible at the bottom. The silicon single crystal was pulled in the same manner as described above. The results are shown in Table 3. Each numerical value is an average value of five times. The side wall synthetic quartz crucible having the configuration shown in FIG. 1 was used. As shown in Table 3, a crucible whose entire inner surface is covered with synthetic quartz has a small devitrification area on the crucible side wall and the bottom, but has a large amount of erosion, and therefore has a low single crystallization ratio. In addition, the crucible formed entirely of natural quartz has a small amount of erosion, but has a large devitrification area of the side wall, and has the lowest single crystallization ratio. On the other hand, in the crucible in which the inner surface of the side wall is covered with synthetic quartz (the product of the present invention), the devitrification area and the amount of erosion of the bottom and the side wall are intermediate between the whole natural quartz crucible and the whole synthetic quartz crucible. The overall result is the highest single crystallization ratio.
【００１８】[0018]
【表３】 [Table 3]
【００１９】[0019]
【発明の効果】本発明の石英ガラスルツボは、シリコン
単結晶を引き上げる際に、実施例に示すように、加熱条
件に対応して適切な原料構成のルツボを用いることによ
り優れた単結晶化率を達成することができる。具体的に
は、加熱源に近接する部分の内表面が天然石英によって
形成され、残余の部分が合成石英によって形成されてい
る石英ガラスルツボを用いることにより、加熱源に近接
する部分の溶損を抑制して単結晶化率を高めることがで
きる。因みに天然石英部分は溶損量が少ないので含有さ
れている不純物の影響も最小限に抑えることができる。The quartz glass crucible of the present invention has an excellent single crystallization rate by using a crucible having an appropriate raw material composition corresponding to the heating conditions when pulling a silicon single crystal as shown in the examples. Can be achieved. Specifically, by using a quartz glass crucible in which the inner surface of the portion near the heating source is formed of natural quartz and the remaining portion is formed of synthetic quartz, erosion of the portion near the heating source is reduced. Suppression can increase the single crystallization ratio. Incidentally, since the amount of erosion of the natural quartz portion is small, the influence of impurities contained therein can be minimized.
【図１】本発明に係る石英ルツボの縦断面模式図FIG. 1 is a schematic longitudinal sectional view of a quartz crucible according to the present invention.
【図２】本発明の他の構成例を示す石英ルツボの縦断面
模式図FIG. 2 is a schematic longitudinal sectional view of a quartz crucible showing another configuration example of the present invention.
１０−側壁部、１１−湾曲部、１２−底部、２０−合成
石英、２２−天然石英10-side wall, 11-bend, 12-bottom, 20-synthetic quartz, 22-natural quartz
Claims (3)
ガラスルツボにおいて、ルツボの側壁内表面部分または
底部内表面部分が合成石英ガラスによって形成されてお
り、残余の内周面部分が天然石英によって形成されてい
ることを特徴とする石英ガラスルツボ。1. A quartz glass crucible used for pulling a silicon single crystal, wherein the inner surface of the side wall or the inner surface of the bottom of the crucible is formed of synthetic quartz glass, and the remaining inner peripheral surface is formed of natural quartz. A quartz glass crucible characterized in that:
ガラスルツボにおいて、ルツボの側壁部から湾曲部を含
む範囲の内表面部分が合成石英ガラスによって形成され
ており、底部内表面部分が天然石英ガラスによって形成
されていることを特徴とする石英ガラスルツボ。2. A quartz glass crucible used for pulling a silicon single crystal, wherein an inner surface portion of a range including a curved portion from a side wall portion of the crucible is formed of synthetic quartz glass, and a bottom inner surface portion is formed of natural quartz glass. A quartz glass crucible characterized by being formed.
ガラスルツボにおいて、ルツボの底部から湾曲部を含む
範囲の内表面部分が合成石英ガラスによって形成されて
おり、側壁内表面部分が天然石英ガラスによって形成さ
れていることを特徴とする石英ガラスルツボ。3. A quartz glass crucible used for pulling a silicon single crystal, wherein an inner surface portion of a range including a curved portion from the bottom of the crucible is formed of synthetic quartz glass, and an inner surface portion of a side wall is formed of natural quartz glass. A quartz glass crucible characterized by being made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001091788A JP4548962B2 (en) | 2001-03-28 | 2001-03-28 | Silica glass crucible and silicon single crystal pulling method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001091788A JP4548962B2 (en) | 2001-03-28 | 2001-03-28 | Silica glass crucible and silicon single crystal pulling method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002284596A true JP2002284596A (en) | 2002-10-03 |
| JP4548962B2 JP4548962B2 (en) | 2010-09-22 |
Family
ID=18946354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001091788A Expired - Lifetime JP4548962B2 (en) | 2001-03-28 | 2001-03-28 | Silica glass crucible and silicon single crystal pulling method using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4548962B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004097080A1 (en) * | 2003-05-01 | 2004-11-11 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof |
| WO2004106247A1 (en) * | 2003-05-30 | 2004-12-09 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for pulling up silicon single crystal |
| WO2009054529A1 (en) * | 2007-10-25 | 2009-04-30 | Japan Super Quartz Corporation | Quartz glass crucible, method for manufacturing quartz glass crucible and application of quartz glass crucible |
| JP2009132616A (en) * | 2009-03-16 | 2009-06-18 | Japan Siper Quarts Corp | Method for pulling silicon single crystal |
| US7686887B2 (en) | 2002-07-31 | 2010-03-30 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass crucible for pulling up silicon single crystal and method for producing the same |
| JP2010132534A (en) * | 2008-10-31 | 2010-06-17 | Japan Siper Quarts Corp | Silica glass crucible for pulling silicon single crystal, method for manufacturing the same, and method for producing silicon single crystal |
| JP2010138005A (en) * | 2008-12-09 | 2010-06-24 | Japan Siper Quarts Corp | Quartz glass crucible for pulling up silicon single crystal and method for manufacturing the same |
| JP2012116713A (en) * | 2010-12-01 | 2012-06-21 | Japan Siper Quarts Corp | Vitreous silica crucible |
| KR101185114B1 (en) | 2008-07-25 | 2012-09-21 | 파나소닉 주식회사 | Hydrogen generation device and fuel cell system provided therewith |
| WO2013099431A1 (en) * | 2011-12-30 | 2013-07-04 | ジャパンスーパークォーツ株式会社 | Silica glass crucible |
| KR20130098903A (en) * | 2012-02-28 | 2013-09-05 | 미쓰비시 마테리알 가부시키가이샤 | Quartz crucible, production method of the same, and casting apparatus |
-
2001
- 2001-03-28 JP JP2001091788A patent/JP4548962B2/en not_active Expired - Lifetime
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7686887B2 (en) | 2002-07-31 | 2010-03-30 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass crucible for pulling up silicon single crystal and method for producing the same |
| JP2009051729A (en) * | 2003-05-01 | 2009-03-12 | Shinetsu Quartz Prod Co Ltd | Quartz glass crucible for pulling up silicon single crystal and its manufacturing method |
| WO2004097080A1 (en) * | 2003-05-01 | 2004-11-11 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof |
| US8277559B2 (en) | 2003-05-01 | 2012-10-02 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof |
| WO2004106247A1 (en) * | 2003-05-30 | 2004-12-09 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for pulling up silicon single crystal |
| JPWO2004106247A1 (en) * | 2003-05-30 | 2006-07-20 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystals |
| KR100731833B1 (en) * | 2003-05-30 | 2007-06-25 | 신에쯔 세끼에이 가부시키가이샤 | Quartz Glass Crucible for Pulling Up Silicon Single Crystal |
| US7299658B2 (en) | 2003-05-30 | 2007-11-27 | Heraeus Quarzglas Gmbh & Co. K.G. | Quartz glass crucible for the pulling up of silicon single crystal |
| JP4526034B2 (en) * | 2003-05-30 | 2010-08-18 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystals |
| WO2009054529A1 (en) * | 2007-10-25 | 2009-04-30 | Japan Super Quartz Corporation | Quartz glass crucible, method for manufacturing quartz glass crucible and application of quartz glass crucible |
| JP2009102206A (en) * | 2007-10-25 | 2009-05-14 | Japan Siper Quarts Corp | Quartz glass crucible, method for producing the same, and its application |
| KR101185114B1 (en) | 2008-07-25 | 2012-09-21 | 파나소닉 주식회사 | Hydrogen generation device and fuel cell system provided therewith |
| US8506708B2 (en) | 2008-10-31 | 2013-08-13 | Japan Super Quartz Corporation | Silica glass crucible for pulling up silicon single crystal, method for manufacturing thereof and method for manufacturing silicon single crystal |
| JP2010132534A (en) * | 2008-10-31 | 2010-06-17 | Japan Siper Quarts Corp | Silica glass crucible for pulling silicon single crystal, method for manufacturing the same, and method for producing silicon single crystal |
| JP2010138005A (en) * | 2008-12-09 | 2010-06-24 | Japan Siper Quarts Corp | Quartz glass crucible for pulling up silicon single crystal and method for manufacturing the same |
| JP2009132616A (en) * | 2009-03-16 | 2009-06-18 | Japan Siper Quarts Corp | Method for pulling silicon single crystal |
| US9347148B2 (en) | 2010-12-01 | 2016-05-24 | Sumco Corporation | Vitreous silica crucible with specific ratio of transparent layer and bubble-containing layer thicknesses |
| JP2012116713A (en) * | 2010-12-01 | 2012-06-21 | Japan Siper Quarts Corp | Vitreous silica crucible |
| TWI507574B (en) * | 2011-12-30 | 2015-11-11 | 日本超精石英股份有限公司 | Silica glass crucible |
| KR20140107513A (en) * | 2011-12-30 | 2014-09-04 | 가부시키가이샤 섬코 | Silica glass crucible |
| EP2799597A4 (en) * | 2011-12-30 | 2015-08-19 | Sumco Corp | Silica glass crucible |
| JP2013139359A (en) * | 2011-12-30 | 2013-07-18 | Japan Siper Quarts Corp | Silica glass crucible |
| WO2013099431A1 (en) * | 2011-12-30 | 2013-07-04 | ジャパンスーパークォーツ株式会社 | Silica glass crucible |
| KR101638586B1 (en) * | 2011-12-30 | 2016-07-11 | 가부시키가이샤 섬코 | Silica glass crucible |
| US9758900B2 (en) | 2011-12-30 | 2017-09-12 | Sumco Corporation | Silica glass crucible |
| KR20130098903A (en) * | 2012-02-28 | 2013-09-05 | 미쓰비시 마테리알 가부시키가이샤 | Quartz crucible, production method of the same, and casting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4548962B2 (en) | 2010-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5022230B2 (en) | Quartz glass crucible and its manufacturing method and application | |
| TWI275669B (en) | Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof | |
| JP4447738B2 (en) | Method for producing a quartz glass crucible having a multilayer structure | |
| JP4526034B2 (en) | Silica glass crucible for pulling silicon single crystals | |
| TWI338727B (en) | Partially devitrified crucible | |
| US20100126407A1 (en) | Silica glass crucible and method for pulling single-crystal silicon | |
| JP2002284596A (en) | Quartz glass crucible with inner surface partially coated with synthetic quartz | |
| CN101965418A (en) | Quartz crucible for pulling silicon single crystal and method for manufacturing the quartz crucible | |
| JP2009102206A (en) | Quartz glass crucible, method for producing the same, and its application | |
| US20100000465A1 (en) | Method for producing vitreous silica crucible | |
| JP2007269533A (en) | Quartz glass crucible and its application | |
| JPH06191986A (en) | Quartz crucible for lifting silicon single crystal | |
| JPH0360490A (en) | Quartz glass crucible for pulling up semiconductor single crystal | |
| JP2006124235A (en) | Quartz glass crucible, method of manufacturing the same and application thereof | |
| JP6351534B2 (en) | Silica glass crucible for pulling silicon single crystals | |
| JP2936392B2 (en) | Quartz crucible for pulling silicon single crystal | |
| JPH06329493A (en) | Quartz crucible for pulling up silicon single crystal | |
| JP3136533B2 (en) | Quartz crucible for pulling silicon single crystal | |
| JP5191003B2 (en) | Silica glass crucible for silicon single crystal pulling | |
| EP2141130B1 (en) | Method for producing vitreous silica crucible | |
| JP2789804B2 (en) | Quartz crucible for pulling silicon single crystal and its manufacturing method | |
| JP7141844B2 (en) | Manufacturing method of quartz glass crucible | |
| JP2602442B2 (en) | Quartz crucible for pulling silicon single crystal | |
| JP6208080B2 (en) | Quartz glass crucible | |
| JP2602442C (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080325 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20090216 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20090325 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100305 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100316 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100506 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100706 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100706 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4548962 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130716 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130716 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130716 Year of fee payment: 3 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130716 Year of fee payment: 3 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |