JP2002283299A5 - - Google Patents
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- JP2002283299A5 JP2002283299A5 JP2001081359A JP2001081359A JP2002283299A5 JP 2002283299 A5 JP2002283299 A5 JP 2002283299A5 JP 2001081359 A JP2001081359 A JP 2001081359A JP 2001081359 A JP2001081359 A JP 2001081359A JP 2002283299 A5 JP2002283299 A5 JP 2002283299A5
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- JP
- Japan
- Prior art keywords
- sacrificial layer
- layer
- substrate
- actuator
- electric machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical group F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Description
【0005】
【課題を解決するための手段】
微細構造を備えた微小電気機械は、電気回路が形成されたウェハ状のワークに形成され、その後、ダイシングしてチップ化し、さらに、パッケージにマウントして出荷される。あるいは、プロジェクタなどの映像表示装置あるいはその他の微小電気機器を用いた装置に設置される。このため、パッケージングされた段階で所望の性能を発揮できることが要求される。しかしながら、チップ化したときには所望の性能を発揮しても、パッケージングされた後に不具合が生ずることもあり、ごみの付着や、稼動部分の微小な変形などが要因となっていると考えられる。そこで、本発明においては、微小電気機械を製造する際に、チップ化する段階で一応の完成品とするのではなく、パッケージングされて電気的に接続(配線)された後にチップレベルでも完成するようにしている。このため、少なくともパッケージ化まで行った段階で、構造層を製造するための犠牲層を取除き、微小電気機械を完成させるようにする。これにより、微小電気機械の構造層を成形するための犠牲層を、パッケージングした後の配線工程が終るまで残しておくことで、ボンディングなど配線する際に生じる可能性のあるゴミの付着、微小な変形から微小電気機械を保護することができ、パッケージングされた段階での歩留り、品質および信頼性の向上を図ることが可能となる。[0005]
[Means for Solving the Problems]
Microelectromechanical having a microstructure, an electric circuit is formed on the wafer-shaped workpiece is formed, then chips and dicing in g, further, be shipped mounted in the package. Alternatively, it is installed in an apparatus using an image display apparatus such as a projector or other small electric device. Therefore, it is required that the desired performance can be exhibited at the packaging stage. However, even if it is made into a chip, even if it exhibits desired performance, problems may occur after packaging, and it is considered that adhesion of dust, minute deformation of the working part, etc. are the factors. Therefore, in the present invention, when manufacturing a micro-electric machine, it is not a complete product at the chipping stage, but is complete at the chip level after being packaged and electrically connected (wiring). It is like that. For this reason, at least at the stage of packaging, the sacrificial layer for producing the structural layer is removed to complete the micro-electric machine. Thereby, by leaving the sacrificial layer for forming the structural layer of the micro electric machine until the wiring process after packaging is completed, adhesion of dust that may occur when wiring such as bonding, micro It is possible to protect the micro electric machine from such deformation, and to improve the yield, quality and reliability at the packaging stage.
【0010】
さらに、本発明の製造方法で使用されるエッチェントは、ドライエッチングできるので、エッチングに続いて同じチェンバー内で、パッケージ材に取り付けられた基板を封止する工程を引続き行うことができる。したがって、真空や窒素雰囲気下で封止を行い、外気に晒されることなく基板を封止できるので、ゴミなどの侵入を防ぐことができる。さらに、ドライな環境下で取り扱えるので、封止の際に、水分を含むことによる吸着などのトラブルを回避でき、この点においても信頼性の高い、高品質な微小電気機械を、歩留り良く製造できる。[0010]
Furthermore, Etchento used in the production method of the present invention, since it dry etching, following the etching in the same chamber over, it is possible to continue performing the step of sealing the substrate attached to the packaging material. Therefore, sealing is performed in a vacuum or nitrogen atmosphere, and the substrate can be sealed without being exposed to the outside air, so that intrusion of dust and the like can be prevented. Furthermore, since it can be handled in a dry environment, problems such as adsorption due to moisture can be avoided at the time of sealing, and high-quality micro electric machines with high reliability can be manufactured with high yield in this respect as well. .
【0024】
その後、図4に示すように、画像表示装置として本例のデバイスを使用するときに各画素の単位となる光スイッチング素子10ごとに、光学素子層40の部分のみをドライエッチングなどの技術により素子分離し、素子間に溝90を形成する。本例では、この段階では犠牲層99は除去しない。すなわち、アクチュエータ層60には犠牲層99が残されており、アクチュエータとして機能するときに可動部分となる隙間Gは犠牲層99で埋まっている。この状態で、ワーク50をウェハからダイシングしてチップ化する。そして、この犠牲層99を備えた状態のチップ50を製造した段階で、次にパッケージ材に取り付ける実装プロセスに移行する。[0024]
Thereafter, as shown in FIG. 4, when using the device of the present example as an image display device, only the portion of the optical element layer 40 is an element by a technique such as dry etching for each light switching element 10 serving as a unit of each pixel. Separate and form grooves 90 between the elements. In this example, the sacrificial layer 99 is not removed at this stage. That is, the sacrificial layer 99 is left in the actuator layer 60, and the gap G which becomes a movable part when functioning as an actuator is filled with the sacrificial layer 99. In this state, the tip of the workpiece 50 and the die sheet ring from a wafer. Then, at the stage of manufacturing the chip 50 with the sacrificial layer 99, the process moves to a mounting process for mounting on the package material.
【0040】
したがって、本プロセスにおいても、上述したエバネセント光を用いた光スイッチングデバイス55と同様に、微小電気機械として機能するチップ50をパッケージ化し、さらに本例では光ガイドとなる光ファイバーを取り付ける段階まで犠牲層99を残しておき、その後、犠牲層を除去し微小電気機械の部分あるいは素子を自立させ完成させるようにする。さらに、犠牲層99とそれを除去するエッチェントの組み合わせを、アクチュエータ6や光学素子49、ダイアタッチ剤120などにも影響を与えないものを選択することで、上記のような順番で犠牲層を除去する製造方法を不具合なく実現可能とし、その結果、歩留りが向上して、品質および信頼性の高い光スイッチングデバイスを提供することができる。[0040]
Thus, steps in the present process, like the optical switching device 55 using the evanescent light as described above, the chip 50 that serves as a microelectromechanical package, attaching the light off § Lee bar serving as a light guide in yet this example The sacrificial layer 99 is left until the sacrificial layer is removed, and portions or elements of the micro-electric machine are allowed to stand and complete. Furthermore, by selecting the combination of the sacrificial layer 99 and the etchant for removing it without affecting the actuator 6, the optical element 49, the die attach agent 120, etc., the sacrificial layer is removed in the above order. Can be realized without any problems, and as a result, the yield can be improved and an optical switching device with high quality and reliability can be provided.
Claims (15)
前記基板をパッケージ材に取り付け、前記基板の端子と前記パッケージ材の端子とを接続する配線工程と、
前記犠牲層を除去する工程とを有する微小電気機械の製造方法。Forming on the substrate a structural layer constituting a movable electrode, and a sacrificial layer for forming the structural layer to form a movable layer capable of electrically controlling or measuring the movement of the electrode;
A wiring step of attaching the substrate to a package material, and connecting a terminal of the substrate and a terminal of the package material;
Removing the sacrificial layer.
前記犠牲層を除去する工程では、前記ダイアタッチ剤に影響を与えないエッチェントを用いる微小電気機械の製造方法。In Claim 1, in the wiring step, the substrate and the package material are fixed by a die attach agent,
In the step of removing the sacrificial layer, a method of manufacturing a micro-electric machine using an etchant that does not affect the die attach agent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001081359A JP2002283299A (en) | 2001-03-21 | 2001-03-21 | Method of manufacturing microelectric machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001081359A JP2002283299A (en) | 2001-03-21 | 2001-03-21 | Method of manufacturing microelectric machine |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002283299A JP2002283299A (en) | 2002-10-03 |
JP2002283299A5 true JP2002283299A5 (en) | 2005-02-17 |
Family
ID=18937482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001081359A Withdrawn JP2002283299A (en) | 2001-03-21 | 2001-03-21 | Method of manufacturing microelectric machine |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002283299A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7476327B2 (en) * | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
JP2010179401A (en) * | 2009-02-05 | 2010-08-19 | Toshiba Corp | Method of manufacturing semiconductor apparatus and semiconductor apparatus |
-
2001
- 2001-03-21 JP JP2001081359A patent/JP2002283299A/en not_active Withdrawn
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