JP2002277323A - Ultraviolet ray photodetector, ultraviolet ray quantity measuring device and ultraviolet ray quantity measuring method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ultraviolet ray photodetector having no restriction on a measuring object and the measuring position, capable of measuring accurately the ultraviolet ray quantity on the measuring position, an ultraviolet ray quantity measuring device using it, and an ultraviolet ray quantity measuring method. SOLUTION: This ultraviolet ray photodetector 20 is equipped with an ultraviolet ray receiving element 22 having a semiconductor layer 36, and a protector 24 for protecting the ultraviolet ray receiving element 22, having a measuring position installation surface 42 and a light incident surface 38. In the photodetector 20, the thickness A of the whole photodetector 20 is 5 mm or less, the height B from the light receiving surface 36 to the light incident surface 38 is 5 mm or less, or the height C from the light receiving surface 36 to the measuring position installation surface 42 is 5 mm or less. The ultraviolet ray quantity measuring device and the ultraviolet ray quantity measuring method are also provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultraviolet light receiver, an ultraviolet light amount measuring device, and an ultraviolet light amount measuring method for measuring the amount of ultraviolet light such as sunlight or a mercury lamp.

[0002]

2. Description of the Related Art In recent years, industrial equipment using ultraviolet rays has been used in various fields such as a color image output device, an ozone generator or a semiconductor manufacturing device, printing, coating, and optical molding. Ultraviolet light sources include sunlight, mercury lamps, lasers, and synchrotron radiation. Among them, mercury lamps are widely used for industrial purposes because they are inexpensive and easily obtain strong ultraviolet rays. Mercury lamps include ultra-high pressure mercury lamps, high pressure mercury lamps, medium pressure mercury lamps, and low pressure mercury lamps depending on the mercury vapor pressure. These use light emission from excited mercury atoms. Of these, the low-pressure mercury lamp is 185n
m and 254 nm emission lines occupy most of them. Further, the high-pressure mercury lamp has an emission line having a visible wavelength of 313 nm or 366 nm, which is a long wavelength. In addition, there is relatively weak light emission in the visible region. By the way, these ultraviolet rays are industrially used wavelengths, and the uses thereof are various, such as sterilization, curing, drying, and curing and drying. It is also used as an ozone generating source.

[0003] A mercury lamp uses light emitted from an excited state by exciting mercury vapor with electrons from an electrode to which a high voltage is applied, or by exciting using an electrodeless discharge such as a microwave. Discharge tubes are often made of quartz,
A rare gas is sealed and kept in a state close to vacuum. If used in this state for a long period of time, the degree of vacuum is reduced, or the discharge or light emission state is changed due to the release of gas from the electrode or the release of gas from the quartz wall or the like, resulting in deterioration. For this reason, the deterioration state of the light source greatly affects the quality performance of an irradiation target (a three-dimensional object or a flat plate such as a wafer). Since the amount of ultraviolet light from such a light source is inversely proportional to the square of the distance, it is necessary to measure the amount of ultraviolet light on the subject.
For this reason, it is possible to accurately know the amount of light by directly measuring the amount of light in close contact with the object to be irradiated, and to control the processing and the reaction more precisely and stably.

[0004] In these ultraviolet application fields, when performing reaction or processing by ultraviolet light, it is difficult to measure the amount of ultraviolet light under the same conditions as the surface of the object to be irradiated, and to perform the reaction, production or processing under a controlled amount of light. It is important to obtain stable quality of the product.

However, the photodetector in the conventional ultraviolet light quantity measuring device often uses a silicon-based material as a light receiving element (semiconductor layer). When measuring ultraviolet light, an interference filter or a long wavelength cut filter is used. It was necessary to use them one on top of the other, and to separate the light receiving surface from the incident surface so that the light was incident perpendicularly. In addition, it is necessary to shield visible light other than ultraviolet light, and a diffusion plate is often provided to further reduce the angle dependence. Under such circumstances, the thickness of the light receiving unit is very large at present. Also, if the incident area of the light receiving element is increased in order to increase the output of the light receiving unit, the length of the light receiver must be increased in order to keep the incident angle vertical, and the light receiver must be enlarged. is the current situation.

For this reason, the measurement position is limited by the size (thickness), the actual amount of ultraviolet light at the target measurement position,
With the ultraviolet light amount measured by the ultraviolet light amount measuring device, there is a problem that an error occurs due to the size (thickness) of the light receiver, and the ultraviolet light amount at the target measurement position cannot be accurately measured. . In addition, since ultraviolet light for industrial use uses ultraviolet light of short wavelength or ultraviolet light of high light amount, there is a problem that silicon itself deteriorates and a long wavelength cut filter used for cutting visible light also deteriorates.
Stable measurement could not be performed.

On the other hand, the influence of ultraviolet rays in health care has been attracting attention, and sunlight as an ultraviolet ray source is greatly affected by weather conditions, and forms an omnidirectional ultraviolet environment by scattering and reflection in addition to direct sunlight. I have. In particular, as sunlight is a light source with a large change, and the person as the irradiation object is active, if the intensity of the ultraviolet light applied to the skin of the human body can be measured at, for example, any part of the face, It is possible to know the amount of ultraviolet light exposed in daily life, and to optimize the way of care. However, it has not been possible to directly measure the amount of ultraviolet light on the skin under various daily conditions because the ultraviolet sensor is large and heavy with conventional sensors. In addition, since the incident angle dependence of the light receiver is large, there is a problem that the amount of ultraviolet light cannot be measured correctly including the influence of scattered ultraviolet light from the whole sky.

[0008]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems and achieve the following objects. In other words, an object of the present invention is to provide an ultraviolet light receiver capable of accurately measuring the amount of ultraviolet light at a measurement position without any restriction on an object to be measured and its measurement position, an ultraviolet light amount measuring apparatus and an ultraviolet light amount measurement method using the same. It is to provide.

[0009]

The above object is achieved by the following means. That is, the present invention provides: <1> installed at an arbitrary measurement position on an object to be measured,
An ultraviolet light receiver used for measuring the amount of ultraviolet light at the measurement position, an ultraviolet light receiving element having a semiconductor layer that receives ultraviolet light, and a measurement position setting for protecting the ultraviolet light receiving element and installing the ultraviolet light receiving element at the measurement position. A protective body having a surface and a light incident surface on which ultraviolet light to be received by the semiconductor layer is incident, wherein the total thickness of the ultraviolet light receiver is 5 mm or less.

<2> An ultraviolet light receiver which is installed at an arbitrary measurement position on a measurement object and is used for measuring the amount of ultraviolet light at the measurement position, wherein the ultraviolet light receiving element has a semiconductor layer for receiving ultraviolet light; Protecting the ultraviolet light receiving element, and comprising a measurement position installation surface to be installed at the measurement position, and a protective body having a light incident surface on which the ultraviolet light to be received by the semiconductor layer is incident, from the light receiving surface of the semiconductor layer An ultraviolet receiver having a height up to the light incident surface of 5 mm or less.

<3> An ultraviolet light receiver which is installed at an arbitrary measurement position on a measurement object and is used for measuring the amount of ultraviolet light at the measurement position, wherein the ultraviolet light receiving element has a semiconductor layer for receiving ultraviolet light, Protecting the ultraviolet light receiving element, and comprising a measurement position installation surface to be installed at the measurement position, and a protective body having a light incident surface on which the ultraviolet light to be received by the semiconductor layer is incident, from the light receiving surface of the semiconductor layer Height to the measuring position installation surface is 5mm
An ultraviolet light receiver characterized by the following.

<4> The ultraviolet ray receiver according to any one of <1> to <3>, further comprising a fixing unit provided on the measurement position installation surface to make close contact with the measurement position.

<5> The semiconductor device according to any one of <1> to <4>, wherein the semiconductor layer contains at least one element selected from Group IIIA elements and nitrogen. It is an ultraviolet ray receiver of the description.

<6> The ultraviolet light receiver according to any one of <1> to <4>, and a signal detector electrically connected to the ultraviolet light receiver and detecting a signal output from the ultraviolet light receiver. And an ultraviolet light quantity measuring device.

<7> The ultraviolet light amount according to <6>, wherein a plurality of the ultraviolet light receivers are provided, and the plurality of ultraviolet light receivers are respectively electrically connected to the signal detector. It is a measuring device.

<8> The ultraviolet light quantity measuring device according to <6> or <7>, further comprising a conductor for connecting the ultraviolet light receiver and the signal detector.

<9> A method for measuring an amount of ultraviolet light using the apparatus for measuring an amount of ultraviolet light according to any one of <6> to <8>, wherein the ultraviolet light receiver in the apparatus for measuring an amount of ultraviolet light includes: Place at any measurement position,
An ultraviolet light quantity measuring method is characterized in that an ultraviolet light quantity at the measurement position is measured.

<10> The method for measuring an amount of ultraviolet light according to <9>, wherein the object to be measured is a human body. <11> The method for measuring an ultraviolet light amount according to <9>, wherein the object to be measured is a semiconductor. <12> The method for measuring an ultraviolet light amount according to <9>, wherein the object to be measured is a light transmitting body. <13> The method for measuring the amount of ultraviolet light according to <12>, wherein a plurality of the ultraviolet light receivers are arranged on a light incident surface of the light transmitting body and a surface opposite to the light incident surface.

<14> The method according to any one of <9> to <13>, wherein the object to be measured is a liquid.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
In some cases, the description will be made with reference to the drawings, but those having the same functions are denoted by the same reference numerals throughout the drawings,
The description is omitted.

(Ultraviolet Receiver) The ultraviolet receiver of the present invention is provided at an arbitrary measurement position on a measurement object, and has an ultraviolet light receiving semiconductor layer used for measuring the amount of ultraviolet light at the measurement position. An element, and a protective body that protects the ultraviolet light receiving element and has a measurement position installation surface that is installed at an arbitrary measurement position on the measurement object and a light incident surface that receives ultraviolet light that is received by the semiconductor layer. The ultraviolet light receiver of the present invention comprises the following first to third present inventions.

The ultraviolet light receiver of the first invention has a thickness of 5 mm or less (preferably 3 mm or less, more preferably 2 mm or less). Since the ultraviolet ray receiver of the present invention has a thickness as thin as 5 mm or less, it can be installed at any measurement position regardless of the object to be measured. Further, the amount of ultraviolet light can be measured without an error due to the size.

The height of the ultraviolet light receiver of the second invention from the light receiving surface of the semiconductor layer to the light incident surface of the protective body is 5 mm or less (preferably 3 mm or less, more preferably 2 mm or less). ). Since the height from the light receiving surface of the semiconductor layer to the light incident surface of the protective body is as thin as 5 mm or less, the ultraviolet light receiver of the present invention has a reduced angle dependency and measures the amount of ultraviolet light without error. Can be.

The height of the ultraviolet ray receiver according to the third aspect of the present invention from the light receiving surface of the semiconductor layer to the measurement position installation surface of the protective body is 5 mm or less (preferably 3 mm or less, more preferably 2 mm or less). ). Since the height from the light receiving surface of the semiconductor layer to the measuring position installation surface of the protective body is as thin as 5 mm or less, the ultraviolet light receiver of the present invention can be used to measure the amount of ultraviolet light at the target measuring position and the actual light receiving surface The difference due to the height from the amount of ultraviolet light detected by the method is small, and the amount of ultraviolet light can be measured without errors.

In the following, items common to the first to third ultraviolet receivers of the present invention will be described. The protective body is a measurement position installation surface to be installed at any measurement position on the measurement object,
And a light incident surface through which ultraviolet light to be received by the semiconductor layer is received, while protecting the ultraviolet light receiving element, and optically, mechanically, and chemically protected. For example, when the ultraviolet light receiving element is sensitive to wavelengths other than the wavelength of ultraviolet light, the protective body plays a role of blocking light. Here, the measurement position installation surface and the light incident surface need not be flat surfaces, but may be, for example, curved surfaces. However, it is natural that the light incident surface is formed of a material that transmits ultraviolet light, but from the viewpoint of accurately measuring the amount of ultraviolet light, it is advantageous that the light incident surface has a shape that does not cause light scattering or the like. On the other hand, it is advantageous that the measurement position installation surface is formed in accordance with the surface shape of an arbitrary measurement position on the measurement object. In addition, when the ultraviolet ray receiver is installed at an arbitrary measurement position on the measurement object with the light incident surface facing the light incident surface, the light incident surface and the measurement position installation surface are the same surface.

As the material of the protective body, metal, ceramics, glass, plastic, or the like is used. The specific configuration of the protective body is not particularly limited, for example,
A protective body for fixing and enclosing the ultraviolet light receiving element with an adhesive or the like inside a box-shaped (housing) (especially welding or soldering can also be used when made of metal); An ultraviolet light receiving element is fixed on the object, and only the terminal portion of the ultraviolet light receiving element is sealed or the entire body is sealed with a resin. The ultraviolet light receiving element is sandwiched between two plate-like objects,
A protective body for fixing and enclosing the ultraviolet light receiving element; a protective body for opening and fixing the ultraviolet light receiving element by fixing a predetermined hole; a protective body for fixing and enclosing the ultraviolet light receiving element; Body; and the like. In addition, in the case where the ultraviolet ray receiver is installed on the human body, it is preferable to use plastic as the material, in particular, from the viewpoint of the effect on the human body such as allergic skin reaction and the portability.

The protective body may be configured to expose a part of the ultraviolet light receiving element so that the semiconductor layer in the ultraviolet light receiving element receives ultraviolet light. In this case, a part of the exposed ultraviolet light receiving element becomes a light incident surface of the protection body. Further, the configuration may be such that the ultraviolet light receiving element is completely enclosed and sealed. In this case, at least the light incident surface of the protection body is formed of a material that transmits ultraviolet light. For example, as a material that transmits ultraviolet rays up to about 300 nm, soda glass, borosilicate glass, or a polymer resin such as acryl or polycarbonate to which no ultraviolet absorber is added can be used. As a material that transmits ultraviolet light having a wavelength of about 200 nm, silica glass, quartz, a polymer resin such as polyethylene or polypropylene, or a film can be used.

There may be a space between the protective body and the ultraviolet light receiving element, and the space may be filled with a resin or the like. When a space is provided between the light receiving element and the ultraviolet light receiving element, nitrogen or Ar
Or a liquid such as oil.

The protective body is placed on the measurement position in accordance with the measurement position on the object to be measured (measurement position installation surface).
In addition, it is necessary to provide fixing means such as double-sided tape, heat-resistant tape, suction cup, clip, button, hook, etc. to make close contact with the measurement position. It is preferable because it can be arranged without limitation. Further, the fixing means may be provided on the light incident surface of the protection body.

The ultraviolet light receiving element has a semiconductor layer having sensitivity to ultraviolet rays. This semiconductor layer may have sensitivity to wavelengths other than the wavelength of ultraviolet rays, or may have sensitivity only to ultraviolet rays. For example, like a silicon-based semiconductor layer,
When the semiconductor layer has sensitivity to a wavelength other than the wavelength of ultraviolet light, it is necessary to provide various filters such as an interference filter and a long wavelength cut filter on the light receiving surface side of the semiconductor layer. In this case, the height from the light receiving surface of the semiconductor layer to the light incident surface of the protective body and the thickness of the ultraviolet light receiving element itself can be reduced by reducing the thickness of the filter. In this regard, when the semiconductor layer has sensitivity only to ultraviolet light, it is advantageous because there is no need to provide various filters and the like on the light receiving surface side of the semiconductor layer. However, when a specific ultraviolet wavelength is measured or when the ultraviolet wavelength is changed according to the sensitivity of the semiconductor layer, a slight filter may be provided. For example, when measuring the amount of ultraviolet light only at the wavelength of the ultraviolet light emitted by a mercury lamp, the ultraviolet light receiving element having a semiconductor layer with short wavelength sensitivity has a filter that transmits only a specific short wavelength ultraviolet region and changes the sensitivity wavelength region. It can be provided on the light receiving surface side of the semiconductor layer.

As such a semiconductor layer (ultraviolet light receiving element) having sensitivity only to ultraviolet rays, there is a semiconductor layer containing SiC, diamond, titanium oxide, zinc oxide, or a nitride compound semiconductor. In particular, a semiconductor layer made of a nitride-based compound semiconductor containing at least one element selected from Group III elements (eg, Al, Ga, In) and nitrogen can be freely changed by changing its composition. This is preferable because the light receiving wavelength can be changed. Other members such as electrodes in the ultraviolet light receiving element can be appropriately configured according to the type of the semiconductor layer.

In the following, nitrogen and at least one element selected from group III elements (group number according to the revised version of the 1989 inorganic chemical nomenclature of IUPAC, which is 13), which are preferably used in the ultraviolet light receiver of the present invention, are used. An ultraviolet light receiving element having a semiconductor layer made of a nitride-based compound semiconductor containing the following will specifically be described together with its configuration.

At least one selected from Group III elements
An ultraviolet light receiving element having a semiconductor layer containing a species element and nitrogen is, for example, a semiconductor containing at least a species element selected from Group III elements and nitrogen on a conductive substrate surface. It is formed by stacking layers and electrodes.

-Conductive Substrate- The conductive substrate may be either a conductive substrate itself or an insulating support having a conductive surface, and may be a crystalline or amorphous substrate. It does not matter. Examples of the conductive substrate in which the substrate itself is conductive include metals such as aluminum, stainless steel, nickel, and chromium, and alloy crystals thereof, Si, GaAs, GaP, GaN, and Si.
Semiconductors such as C and ZnO can be given.

Further, examples of the insulating support include a polymer film, glass, quartz, ceramic and the like. The conductive treatment of the insulating support can be performed by forming a film of the metal or gold, silver, copper, or the like described in the specific examples of the conductive substrate by an evaporation method, a sputtering method, an ion plating method, or the like. .

When light is incident from the conductive substrate side, the conductive substrate needs to have transparency. Therefore, as a transparent support of a conductive substrate having transparency (hereinafter, referred to as a transparent conductive substrate), a transparent inorganic material such as glass, quartz, sapphire, MgO, SiC, ZnO, LiF, and CaF ₂ ; Further, a film or plate of a transparent organic resin such as a fluororesin, polyester, polycarbonate, polyethylene, polyethylene terephthalate, epoxy or the like, an optical fiber, a selfoc optical plate and the like can be used.

The transparent support is used as it is as a transparent conductive substrate if it is conductive, but if it is not conductive, it needs to be made conductive or to form a transparent electrode. The conductive treatment or the formation of the transparent electrode is performed by using a transparent conductive material such as ITO, zinc oxide, tin oxide, lead oxide, indium oxide, and copper iodide, and by a method such as vapor deposition, ion plating, and sputtering. And a metal such as Al, Ni, Au or the like formed by vapor deposition, sputtering, or the like so as to be thin enough to be translucent.

-Semiconductor Layer- The semiconductor layer contains at least one element selected from Group III elements (the group number is 13 according to the revised edition of IUPAC's 1989 inorganic chemical nomenclature) and nitrogen. And other components. Specific examples of Group III elements include B, Al, Ga, In, and Tl.
It is preferably at least one selected from Al, Ga, and In.

The semiconductor layer may be non-single crystalline or single crystalline. When it is non-single crystalline, it may be amorphous, microcrystalline, or a mixture thereof. In the case of a crystalline state, the crystal system may be any one of a cubic system and a hexagonal system, or may be a state in which a plurality of crystal systems are mixed. The crystal may be a columnar-grown crystal, a single peak in an X-ray diffraction spectrum, a crystal plane orientation highly oriented, or a single crystal.

When the semiconductor layer is non-single-crystal, the semiconductor layer may contain 0.5 to 50 at% of hydrogen, or may contain a monocoordinate halogen element. When the hydrogen content of the semiconductor layer is less than 0.5 at%, bond defects at crystal grain boundaries or bond defects and dangling bonds inside the amorphous phase are eliminated by bonding with hydrogen, and the semiconductor layer is formed in a band. Insufficiently to inactivate the defect level, the coupling defects and the structural defects increase, the dark resistance decreases, and the photosensitivity is lost, so that it may not be possible to function as a practical semiconductor light receiving element.

On the other hand, if the semiconductor layer has a hydrogen content of 50
If it exceeds at%, electrical characteristics may be deteriorated and mechanical properties such as hardness may be reduced. Further, the semiconductor layer is easily oxidized, and the weather resistance may be deteriorated.

Here, the hydrogen content (at%) of the semiconductor layer
Can be measured for absolute value by hydrogen forward scattering (HFS). The hydrogen content can also be estimated by measuring the amount of hydrogen released by heating. Furthermore, in the manufacturing process of the semiconductor light receiving element of the present invention, by forming a similar optical semiconductor layer on an infrared transparent substrate such as silicon and sapphire at the same time as forming the semiconductor layer, the optical semiconductor Can be easily measured.
Note that the hydrogen bonding state is also determined from the infrared absorption spectrum.

The structure of the semiconductor layer containing hydrogen has, for example, no ring-like diffraction pattern as measured by transmission electron beam diffraction, and a halo pattern which is completely lacking long-range order. A halo pattern in which a ring-shaped diffraction pattern can be seen, and a halo pattern in which a bright spot is seen can be used. In such a semiconductor layer, almost no peak is often obtained in X-ray diffraction measurement for observing a wider range than transmission electron beam diffraction.

Further, in transmission electron beam diffraction measurement, many bright spots are observed together with a ring-like diffraction pattern.
Further, even in the case of only spot-shaped bright spots, in the X-ray diffraction measurement, the peak intensity of the polycrystal or the strongest peak is weaker than that of the single crystal, and other weak peaks of other plane orientations are mixed. In some cases. Further, there is a case where an X-ray diffraction spectrum having almost one plane orientation is shown.

In the measurement of the infrared absorption spectrum of the semiconductor layer containing hydrogen, the bonding peak with hydrogen exists,
The half-width of the vibration absorption peak of the bond between the group atom (Al, Ga and In) and the N atom is 150 cm ^-1 or more when the amorphous structure is the main component, and 100 c.
m ⁻¹ or less. Here, the half width is defined as the group III atom and N
This is the width of the absorption band at a value of 1/2 of the maximum intensity of the absorption band composed of a plurality of peaks at the absorption position mainly composed of atomic bonds and the intensity excluding the background.

The size of the microcrystal is 5 nm in diameter.
５5 μm, and can be measured by X-ray diffraction, electron beam diffraction, shape measurement using an electron micrograph of a cross section, or the like.

The extinction coefficient of the semiconductor layer is obtained by measuring the amount of absorption by a spectrophotometer and dividing the obtained value by the layer thickness in a natural logarithmic system. 20,000c in order to be regarded as
m ⁻¹ or less is preferable, and 10,000 cm ⁻¹ or less is more preferable. These values are approximately 3.
It corresponds to 0 eV or less.

As a raw material of the semiconductor layer, an organic metal compound containing a group IIIA element, preferably one or more elements selected from Al, Ga and In can be used. As the organometallic compound, for example, a liquid or solid such as trimethyl aluminum, triethyl aluminum, tertiary butyl aluminum, trimethyl gallium, triethyl gallium, tertiary butyl gallium, trimethyl indium, triethyl indium, and tertiary butyl indium are vaporized. It can be used alone or in a mixed state by bubbling with a carrier gas. Examples of the carrier gas include hydrogen, hydrocarbons such as N ₂ , methane and ethane, CF ₄ , C ₂
A halogenated carbon such as F ₆ can be used.

As the nitrogen source, N ₂ , NH ₃ , NF ₃ ,
A gas such as N ₂ H ₄ or methylhydrazine, or a liquid can be used by vaporizing or bubbling with a carrier gas.

In the composition of the semiconductor layer, the relationship between the total amount m of group III elements and the amount n of nitrogen is 0.5: 1.0 ≦
It is preferable that m: n ≦ 1.0: 0.5 is satisfied. If the ratio is out of this range, the portion of the bond between the group III element and the group V element (N) that takes a tetrahedral bond is small, and the number of defects increases. May not function as a good semiconductor layer.

The optical gap of the semiconductor layer can be arbitrarily changed depending on the mixing ratio of group III elements. GaN: H
For example, in the case where it is set to be larger than 3.2 to 3.5 eV, by adding Al, 200 n
It can be increased to a hand gap (for example, 6.5 eV) capable of absorbing the wavelength region of m to 330 nm (having sensitivity in the wavelength region). Also, by adding In, it is possible to change the hand gap that can absorb the wavelength range while each is transparent. For example, by adding In, the hand gap can be changed to about 3.2 eV or less.

Here, the optical gap is obtained from a plot of the square of the wavelength (eV) and the absorption coefficient (αe) from the extrapolated point of the low energy linear part. Alternatively, a wavelength (eV) having an absorption coefficient of 10,000 cm ^-1 may be used. For the absorption coefficient, use the absorbance excluding the background,
It is determined by measuring the film thickness dependency.

The semiconductor layer can be doped with an element for controlling p and n. The n-type elements that can be doped include Li of the Ia group, Cu, Ag, and A of the Ib group.
u, Mg of group IIa, Zn of group IIb, Si, G of group IVa
e, Sn, Pb, and S, Se, and Te in the VIa group can be used.

The p-type elements that can be doped include Ia
Group Li, Na, K, Ib Group Cu, Ag, Au, IIa
Group Be, Mg, Ca, Sr, Ba, Ra, group IIb Z
n, Cd, Hg, IVa group C, Si, Ge, Sn, P
b, VIa group S, Se, Te, VIb group Cr, Mo,
W, VIIIa group Fe, Co, Ni and the like can be used.

In order to prevent the hydrogen in the semiconductor layer from binding to the dopant and inactivating it, it is necessary that the hydrogen for passivating the defect level be selectively bonded to the group III element and the nitrogen element rather than the dopant. From this point, Si, Ge, and Sn are particularly preferable as the n-type elements, and Be, Mg, and the like are particularly preferable as the p-type elements.
Ca, Zn, and Sr are preferred.

At the time of doping, for n-type, S
iH_Four, Si_TwoH₆, GeH_Four, GeF _Four, SnH_FourIs the p-type
For use, BeH_Two, BeCl_Two, BeCl_Four, Cyclo
Pentadienyl magnesium, dimethyl calcium, di
Methyl strontium, dimethyl zinc, diethyl zinc
Can be used in a gaseous state. In addition, these elements
Thermal diffusion method, ion implantation method
And other known methods.

By forming a single semiconductor layer, a Schottky-type element can be obtained. Further, the efficiency can be further improved by manufacturing a pn diode structure or a pin structure.

The semiconductor layer may be composed of an n-type or p-type semiconductor layer containing at least one or more of Group IIIA elements (preferably Al, Ga and In) and nitrogen (and hydrogen). Alternatively, a film p ⁺ or n ⁺ layer doped with a higher concentration may be inserted, or a film p ⁻ or n ⁻ layer doped with a lower concentration may be inserted.

The semiconductor layer may have a multilayer structure. In this case, the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer have different Al _x Ga _y In _z (x = 0) for transparency and formation of a barrier.
~ 1.0, y = 0 ~ 1.0, z = 0 ~ 1.0), and may have a composition of Al, Ga, In and N.
Type semiconductor layer 122, i-type semiconductor layer 124 and, the respective layers of the n-type semiconductor layer is a plurality Al _x Ga _y In _z N:
H (x = 0-1.0, y = 0-1.0, z = 0-1.
0).

Hereinafter, a method for forming a semiconductor layer will be described with reference to FIG. 1, but the method is not limited to this. In the following manufacturing method, an example using at least one of Al, Ga, and In as the group IIIA element will be described.

FIG. 1 is a schematic structural view of a layer forming apparatus 100 for forming a semiconductor layer. The layer forming apparatus 10
0 indicates that the plasma is used as the activating means. As shown in FIG. 2, the layer forming apparatus 100 includes a container 1 that can be evacuated and evacuated, an exhaust port 2, a substrate holder 3, a heater 4 for heating a substrate, a quartz tube 5 connected to the container 1, 6 and
A high-frequency coil 7, a microwave waveguide 8, a quartz tube 5,
6, and gas introduction pipes 11, 12 connected to the quartz tubes 5, 6, respectively.
And

In the layer forming apparatus 100, for example, N ₂ is used as a nitrogen element source, and is introduced into the quartz tube 5 from the gas introduction tube 9. For example, a microwave of 2.45 GHz is supplied to a microwave waveguide 8 connected to a microwave oscillator (not shown) using a magnetron, and a discharge is generated in the quartz tube 5. From another gas inlet pipe 10,
For example, H ₂ is introduced into the quartz tube 6. A high frequency of 13.56 MHz is supplied from a high frequency oscillator (not shown) to the high frequency coil 7 to generate a discharge in the quartz tube 6. By introducing, for example, trimethylgallium from a gas introduction pipe 12 arranged downstream of the discharge space, the substrate holder 3
A semiconductor layer made of gallium nitrogen can be formed (deposited) on the conductive substrate set in the above.

Although the gas introduced from the gas introduction pipe 12 was trimethylgallium, an organic metal compound containing indium and aluminum can be used instead, or they can be mixed. Further, these organometallic compounds may be mixed and introduced from the gas introduction pipe 11, or may be introduced separately.

The temperature of the conductive substrate is 100 ° C. to 6 ° C.
00 ° C is preferred. Generally, when the temperature of the conductive substrate is high
And / or when the flow rate of group III source gas is low
In that case, a microcrystalline semiconductor layer is easily formed. Also,
The temperature of the conductive substrate is lower than 300 ° C.
When the flow rate is low, a microcrystalline semiconductor layer is formed.
Quickly, substrate temperature is higher than 300 ℃ and lower than low temperature condition II
Even when the flow rate of Group I source gas is large, half of the crystallites
A conductor layer is easily formed. Further, for example, H _TwoDischarge
When performed, finer formation of the semiconductor layer than when not performed
Crystallization can proceed.

A gas containing at least one element selected from C, Si, Ge and Sn, or a gas containing Be,
A gas containing at least one element selected from the group consisting of Mg, Ca, Zn, and Sr is supplied to the downstream side of the discharge space (gas introduction pipe 1).
1 or n from the gas inlet tube 12).
It is possible to obtain an amorphous or microcrystalline nitride semiconductor of any conductivity type such as a p-type and a p-type. When introducing C element, carbon of an organometallic compound may be used depending on conditions.

In the layer forming apparatus 100 as described above,
Active nitrogen or active hydrogen formed by the discharge energy may be controlled independently, or a gas such as NH ₃ containing both nitrogen and hydrogen atoms may be used. H ₂
May be added. Further, a condition under which active hydrogen is liberated from the organometallic compound may be used. In this way, activated group III atoms and nitrogen atoms are present on the conductive substrate in a controlled state, and hydrogen atoms convert methyl and ethyl groups into inert groups such as methane and ethane. In spite of the low temperature, an amorphous or microcrystalline film in which little or no carbon is contained and an extremely small amount of film defects are suppressed can be generated despite the low temperature. Note that the hydrogenated amorphous silicon film uses hydrogen instead of nitrogen, and a gas such as silane, disilane, or trisilane may be used instead of the organic metal gas. Further, it can also be formed using a plasma CVD apparatus.

In the layer forming apparatus 100 as described above,
As the activating means, a high-frequency oscillator, a microwave oscillator, an electrocyclotron resonance method, or a helicon plasma method may be used, one of them may be used, or two or more may be used. Further, both may be microwave oscillators, and both may be high frequency oscillators. Also, in FIG. 1, a high-frequency oscillator and a microwave oscillator are used, but both may be microwave oscillators or both may be high-frequency oscillators. Further, both may use an electrocyclotron resonance method or a helicon plasma method. In the case of high-frequency discharge by a high-frequency oscillator, an induction type or a capacitance type may be used.

When different activating means (exciting means) are used, it is necessary to be able to generate a discharge at the same pressure at the same time, and a gap between the inside of the discharge and the layer forming section (film forming section) in the container 1 is required. May be provided with a pressure difference. Further, when the same pressure is used, if different activating means (exciting means), for example, a microwave oscillator and a high-frequency oscillator are used, the excitation energy of the excited species can be largely changed, which is effective for controlling the film quality. The semiconductor layer can be formed in an atmosphere in which at least hydrogen is activated, such as a reactive evaporation method, ion plating, and reactive sputtering.

-Electrode- The electrode is formed as a counter electrode of the conductive substrate. When light is incident on the electrode from the electrode side, the electrode needs to have transparency. Therefore, as the transparent electrode, a transparent conductive material such as ITO, zinc oxide, tin oxide, lead oxide, indium oxide, and copper iodide can be used, but when the incident light is 300 nm or less, Al, Ni,
A thin film formed of a metal such as Au, Ni, Co, Ag or the like is formed by vapor deposition or sputtering so as to transmit light. The thickness of the film is 5 nm to 100 nm. If it is too thin, the light transmittance is large but the electric resistance is high. If it is too thick, light does not pass.

The ultraviolet light receiving element having a semiconductor layer containing at least one element selected from the group III elements and nitrogen described above is insensitive to visible light, and protects the ultraviolet light receiving element. There is no need to provide a light-shielding property to the protective body, and no need for intervening various filters, etc. Also, it has excellent heat resistance and stability. For this reason, the material and the configuration can be simplified, and the height from the light receiving surface in the semiconductor layer to the measurement position installation surface in the protective body and the height from the light receiving surface in the semiconductor layer to the measurement position installation surface in the protective body can be reduced. It is easy to be thin and small, and the thickness of the ultraviolet ray receiver (protector) can be reduced. Therefore, it is possible to suitably manufacture a thin ultraviolet light receiver that enables measurement at the same height as the measurement position regardless of the object to be measured.

Hereinafter, an example of the ultraviolet light receiver of the present invention will be described. The ultraviolet light receiver 20 shown in FIG. 2A includes an ultraviolet light receiving element 22 and a protection body 24. The protective body 24 is composed of a glass substrate 26 to which the ultraviolet light receiving element 22 is bonded from the electrode 34 side, and an ultraviolet transparent resin 28 that embeds and seals the whole. The ultraviolet light receiving element 22 is formed by sequentially laminating a semiconductor layer 32 and an electrode 34 on a transparent conductive glass substrate 30. The ultraviolet light receiving element 22 is configured to receive ultraviolet light from the transparent conductive glass substrate 30 side, and the surface of the semiconductor layer 32 on the transparent conductive glass substrate 30 side corresponds to a light receiving surface 36. Further, as will be described in detail later, one end of a conductive wire 40 electrically connected to a signal detector (not shown) is fixed to the transparent conductive glass substrate 30 and the electrode 34 by soldering or the like. The surface of the protective body 24 opposite to the light incident surface 38 is a surface arranged at a measurement position on the measurement object, that is, a measurement position installation surface 42, and a fixing means such as a double-sided tape or a heat-resistant tape is provided on this surface. 44 is stuck. Here, in the ultraviolet ray receiver 20 shown in FIG. 2A, the thickness A of the protective body 24 indicates the thickness of the ultraviolet ray receiver itself, and the thickness is 5 mm or less in the first invention. The height B from the light receiving surface 36 of the semiconductor layer 32 to the light incident surface 38 of the protective body 24 is 5 mm or less in the first embodiment of the present invention. The height C from the light receiving surface 36 of the semiconductor layer 32 to the measurement position setting surface 42 of the protective body 24 is 5 mm or less in the third aspect of the present invention.

The ultraviolet light receiver 20 shown in FIG. 2B includes an ultraviolet light receiving element 22 and a protector 24. Protective body 2
Reference numeral 4 denotes a glass substrate 26 having a size larger than that of the transparent conductive glass substrate in which the ultraviolet light receiving element 22 whose terminal portion is sealed with a resin (not shown) is bonded from the electrode 34 side. Other configurations are the same as those of the ultraviolet receiver 20 shown in FIG. Here, in the ultraviolet ray receiver 20 shown in FIG. 2B, the thickness A of the protection body 24 indicates the thickness of the ultraviolet ray receiver 20 itself, and the thickness is 5 mm or less in the first embodiment of the present invention. . The light receiving surface 36 of the semiconductor layer 32 is connected to the light incident surface 38 of the protective body 24 (here, the transparent conductive glass substrate 30 of the ultraviolet light receiving element 22).
Is equivalent to 5 m in the first embodiment of the present invention.
m or less. The light receiving surface 36 of the semiconductor layer 32
Is from 5 mm to 5 mm in the first present invention.

(Ultraviolet light amount measuring device) The ultraviolet light amount measuring device of the present invention is electrically connected to the ultraviolet light receiving device of the present invention and the ultraviolet light receiving device, and detects a signal output from the ultraviolet light receiving device. A signal detector is provided. Since the ultraviolet light quantity measuring device of the present invention includes the ultraviolet light receiver of the present invention, there is no restriction on the object to be measured and its measuring position, and the ultraviolet light amount at the measuring position can be accurately measured.

For example, a weak ammeter is used as the signal detector. In particular, a portable type having a display function is preferable, and a signal (current) from the ultraviolet ray receiver can be amplified and detected, converted into a digital signal by an analog-digital converter, and displayed as a digital value on a display device. The signal detector may have an integrating function, a recording function, or an arithmetic function. Further, a device having a plurality of channels or a device for simultaneously measuring other physical quantities such as temperature may be used.

The ultraviolet light quantity measuring device of the present invention may include a plurality of ultraviolet light receivers. In this case, each of the plurality of ultraviolet light receivers is electrically connected to a signal detector to individually output a signal. It is preferable to adopt a configuration for detecting. By detecting signals from multiple UV receivers individually, it is possible to simultaneously measure and compare the UV light amounts at arbitrary different measurement positions where multiple UV receivers are installed, and to examine the distribution of UV light amounts. it can.

It is preferable that the ultraviolet light quantity measuring device of the present invention has a conductor for connecting the ultraviolet light receiver and the signal detector. The portability of the ultraviolet light receiver can be improved by connecting the ultraviolet light receiver and the signal detector with the conductive wire. The conductor is made of a metal, such as copper or silver, for transmitting a signal output from the ultraviolet light receiver to the signal detector. The conductor may be a multi-core wire, a coaxial wire, or a bundle of a plurality of covered electric wires. Further, those having heat resistance are also preferably used. A bias voltage of the ultraviolet light receiving element may be applied to the conductor, or zero bias may be applied to the conductor. The length of the conducting wire is selected within a range from several cm to several tens of meters depending on the application. The connection between the conducting wire and the ultraviolet light receiver can be made by directly connecting the conducting wire to the electrode of the ultraviolet light receiving element by using a conductive adhesive, solder, wire bonding, pressure bonding, pressure contact, or the like.

In the ultraviolet light quantity measuring device of the present invention, a signal from the ultraviolet light receiving element in the ultraviolet light receiver may be taken out as a photoelectromotive current flowing between the electrodes of the ultraviolet light receiving element by the above-mentioned conductor or the like, or a voltage may be applied. By doing so, it may be extracted as a photocurrent.

Hereinafter, an example of the ultraviolet light quantity measuring device of the present invention will be described. The ultraviolet light amount measuring device shown in FIG. 3 includes the ultraviolet light receiver 20 and a signal detector 46 for detecting a signal output from the ultraviolet light receiver 20. The ultraviolet light receiver 20 and the signal detector 46 are connected by a conductor 40 that transmits a signal output from the ultraviolet light receiver 20 to the signal detector 46.

(Method of Measuring Ultraviolet Light Amount) The method of measuring ultraviolet light amount of the present invention uses the ultraviolet light amount measuring device of the present invention, and moves the ultraviolet light receiver in the ultraviolet light amount measuring device to an arbitrary measurement position on the object to be measured. This is a method of arranging and measuring the amount of ultraviolet light at the measurement position. Since the method for measuring the amount of ultraviolet light according to the present invention uses the apparatus for measuring the amount of ultraviolet light according to the present invention, there is no restriction on the object to be measured and its measuring position, and the amount of ultraviolet light at the measuring position can be accurately measured.

In the method for measuring the amount of ultraviolet light according to the present invention, the object to be measured is not particularly limited, and any object such as a human body, a semiconductor, and a light transmitting body can be measured as an object to be measured. When the measurement object is a human body,
For example, by attaching a tape similar to the skin to the UV receiver, placing the UV receiver on the skin, and applying a cosmetic such as a sunscreen from above, measuring the amount of UV light without noticeable appearance can do. Also,
Install the UV receiver directly on clothes near the human face, or attach it to clothes with a clip attached to the UV receiver or embedded in a accessory such as a brooch on the UV receiver. However, the amount of ultraviolet light can be measured naturally without any discomfort. When the measurement target is a semiconductor, for example, a semiconductor manufacturing apparatus, a printing apparatus, a coating apparatus, or the like in the semiconductor field can measure the amount of ultraviolet light on the surface of the semiconductor to be irradiated at a specific position inside the apparatus. In addition, the measurement can be performed at the same position as the printing surface of the silicon wafer by the ultraviolet processing when printing on the silicon wafer. By measuring the amount of ultraviolet light in this manner, quality can be stably maintained.
According to the present invention, the amount of ultraviolet light can be measured not only in the semiconductor field but also in other fields. When the object to be measured is a light transmitting body, for example, there is a window glass or the like in which solar ultraviolet rays are cut off. In such a place, the outside (light incident surface) and the inside of the window (the opposite surface, ie, light Paste the UV receiver on the transmission surface). The conducting wire can be taken into a room or a car from a window frame or the like as a film conducting wire. This makes it possible to constantly monitor the amount of ultraviolet light on the outside and the amount of ultraviolet light on the inside at the same time.For example, when getting off the car, when moving from a low UV environment inside the car to a high UV environment outside the car, it can alert you to health care. Useful. Also, by simultaneously measuring the amount of ultraviolet light outside the window glass and the amount of ultraviolet light inside the window glass, the ultraviolet transmittance of the window glass can be measured.

In the ultraviolet light quantity measuring method of the present invention, the ultraviolet light receiver can be arranged in the liquid. For example, it is possible to directly measure the amount of ultraviolet light irradiated by an industrial ultraviolet chemical reaction performed in a solution. Specifically, for example,
By installing an ultraviolet ray receiver in a reaction tube, it is possible to measure the amount of ultraviolet rays at a place where a reaction occurs, and it is possible to more accurately analyze a chemical reaction. It is also possible to measure the amount of ultraviolet light on the human body surface (skin) in water. The signal detector can be placed in the atmosphere by attaching an ultraviolet ray receiver to the human body, or the signal detector can be put in a waterproof case and carried together. Further, the effect of ultraviolet light on underwater plant animals can be measured. As described above, the method for measuring the amount of ultraviolet light according to the present invention enables measurement on the surface irradiated with ultraviolet light, which was impossible in the past.

The method for measuring the amount of ultraviolet light according to the present invention can measure natural light such as sunlight or ultraviolet light such as a mercury lamp or an ultraviolet laser as an ultraviolet light source.

[0083]

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, these embodiments do not limit the present invention. (Example 1) First, using the layer forming apparatus 100 shown in FIG. 1, an ultraviolet light receiving element 22 in the ultraviolet light receiver 20 shown in FIG. 2A was manufactured as follows.

On a cleaned 0.2 mm borosilicate glass substrate
Indium tin oxide (ITO) sputtered at 1000Å
The transparent conductive glass substrate 30 placed on the substrate holder 3
After evacuating the inside of the container 1 through the exhaust port 2, the heater
4, the transparent conductive glass substrate 30 is heated to 350 ° C.
Was. N is introduced into the quartz tube 5 having a diameter of 25 mm from the gas introduction tube 9.
_TwoGas is introduced at 1000 sccm, and microwave waveguide 8 is introduced.
2.45GHz microwave output to 250W
It was set and matched with a tuner to discharge. This
The reflected wave at time was 0W. Diameter from gas inlet pipe 10
In a 30 mm quartz tube 6, H_TwoGas w500sccm
Entered. 13.56MHz high frequency output to 100W
I set it. The reflected wave was 0W. In this state,
Trimethyl gallium (T
MGa) using hydrogen as carrier gas
⁶Mass flow controller while bubbling at Pa pressure
0.5 sccm was introduced through the filter. Gas inlet pipe 12
Cyclopentadienyl magnesium maintained at 20 ° C
To H_TwoGas is introduced at a pressure of 65000 Pa and mass flow
Introduced into 1sccm reaction area through controller
Was. At this time, the reaction pressure measured by the Baratron vacuum gauge was 6
It was 5.5 Pa (0.5 Torr). 30 minutes for film formation
A 0.1 μm Mg-doped GaN: H film (semiconductor layer 3
2) was formed.

The Mg-doped GaN: H film has a diameter of 3 m.
An Au electrode 34 having a thickness of 100 nm was formed by vacuum evaporation. This transparent conductive glass substrate (ITO electrode) 30 and A
A 0.1 mm silver wire was bonded to the u electrode 34 with a conductive paste. A 1 mm thick coaxial line was connected to this silver wire for 1 m to form a conductive wire 40. Thus, the ultraviolet light receiving element 22
Was prepared.

Next, the ultraviolet light receiver 20 shown in FIG.
Was produced as follows. On the Au electrode 34 of the obtained ultraviolet light receiving element 22, a glass substrate 26 (0.2 mm thick) having the same size as the transparent conductive glass substrate 30 is coated with an epoxy-based adhesive (trade name: Cemedine High, manufactured by Cemedine Corporation). Super). The terminal portion of the ultraviolet light receiving element 22 was sealed and protected with an epoxy adhesive (trade name: Cemedine High Super, manufactured by Cemedine Co., Ltd.). Further, the whole was dried and hardened at 100 ° C. with an ultraviolet-transparent Epokin-modified silicone resin (resin 28) and embedded to form a protective body 24 made of a glass substrate 26 and a resin 28. Further, a double-sided tape (fixing means 44) was attached to the measurement position setting surface 42 of the protective body 24. Thus, the ultraviolet receiver 20 was obtained. The ultraviolet ray receiver 20 had a thickness A of 2.0 mm, a height B of 0.5 mm, and a height C of 1.5 mm.

Next, an ultraviolet light quantity measuring device shown in FIG. 3 was manufactured. The coaxial line (conductor 40) in the obtained ultraviolet light receiver 20 was connected to an ammeter (signal detector 46) to obtain an ultraviolet light quantity measuring device. The ultraviolet light quantity and output were calibrated using a visible-ultraviolet silicon photodiode manufactured by Hamamatsu Photonics. The photovoltaic current (signal) from the ultraviolet light receiver 20 is detected by the ammeter and converted into the amount of ultraviolet light.

The ultraviolet light receiver 20 of the obtained ultraviolet light amount measuring device was fixed on the skin on the cheek of the face with the double-sided tape. The signal detector 46 was moved by hand. When the amount of ultraviolet light was measured under sunlight, it was found that the amount of ultraviolet light at the same position (height) as on the skin greatly changed depending on the direction. 3.1mW when in direct sunlight
/ Cm ² .

(Example 2) The same two UV receivers 20 as in Example 1 were used, and each was connected to (signal detector 46) to measure the amount of ultraviolet light. Individual UV receiver 20
The photovoltaic current (signal) is detected by an ammeter and converted into an ultraviolet light quantity.

The two ultraviolet light receivers 20 in the obtained ultraviolet light quantity measuring device were fixed to the cheek and nose sides of the face by double-sided tape. As a result, the ultraviolet light amounts of a plurality of portions could be measured simultaneously. As a result, it is almost the same position (height) on the small side surface (side surface of the nose) of the three-dimensional object
Was able to measure.

(Embodiment 3) An ultraviolet light quantity measuring device similar to that of Embodiment 2 was used except that a double-sided tape (fixing means 44) was attached to the light incident surface 38 of one of the ultraviolet receivers 20.
The two UV receivers 20 were fixed to the front and back of the glass plate by the double-sided tape, respectively. Note that, on the back of the glass plate, an ultraviolet ray receiver 20 having a double-sided tape adhered to the light incident surface 38 was fixed with the light incident surface 38 side facing the glass plate.

Fix the front side of the glass plate to sunlight,
The amount of ultraviolet light on both sides was measured. As a result, it was possible to measure the ultraviolet light amounts of a plurality of portions at the same time. Further, as a result of the calculation, the ultraviolet transmittance of the glass plate could be obtained. (Example 4) The ultraviolet light receiving element 22 in the ultraviolet light receiver 20 shown in FIG. 2B was manufactured as follows. In the same manner as in the first embodiment, the M
A g-doped GaN: H film was formed thereon, and an Au electrode 34 having a diameter of 3 mm was formed thereon to a thickness of 100 nm by vacuum evaporation.
A heat-resistant coaxial conductor was bonded to the transparent conductive glass substrate (ITO electrode) 30 and the Au electrode 34 with a heat-resistant adhesive (Tall seal manufactured by Varian). This coaxial conductor has a thickness of 1
mm and a length of 1 m. Thus, the ultraviolet light receiving element 22 was manufactured.

Next, the ultraviolet receiver 20 shown in FIG.
Was produced as follows. A transparent conductive glass substrate 30 is placed on the Au electrode 34 of the obtained ultraviolet light receiving element 22.
A glass substrate 26 (size 5 × 5 mm, thickness 0.2 mm), which is larger than the above, is bonded using a heat-resistant adhesive (Tall seal manufactured by Varian), and the terminal portion of the ultraviolet light receiving element 22 is heat-resistant. Is sealed and protected by an adhesive (Tall seal manufactured by Varian), and a protective body 24 made of a glass substrate 26 is formed.
Was formed. A heat-resistant tape (Kapton tape) (fixing means 44) was attached to the measurement position setting surface 42 of the protective body 24. Thus, the ultraviolet receiver 20 was manufactured. The ultraviolet ray receiver 20 had a thickness A of 1.0 mm, a height B of 0.3 mm, and a height C of 0.7 mm.

An ultraviolet light quantity measuring device was manufactured in the same manner as in Example 1 except that the obtained ultraviolet light receiver 20 was used. The ultraviolet light receiver 20 in this ultraviolet light amount measuring device
Heat-resistant tape (Kapton tape) on Si wafer
And introduced into the high pressure mercury lamp ultraviolet irradiation device. This mercury lamp is mainly a bright line having a wavelength of 365 nm.
When the amount of ultraviolet light was measured, it was found from the hourly current output that the amount of ultraviolet light on the surface of the Si wafer irradiated inside the high-pressure mercury lamp ultraviolet irradiation device was 310 mW / cm ² .

From these examples, it can be seen that, by using the thin ultraviolet light receiver of the present invention, the object is placed in close contact with an arbitrary measurement position on the object to be measured, and the amount of ultraviolet light at a position (height) almost the same as the measurement position. It can be seen that measurement of is possible. In addition, it can be seen that the measurement of the amount of ultraviolet light can be performed on each part of the measurement object, such as on the skin of a human body or the side surface of a three-dimensional object.

[0096]

As described above, according to the present invention, the object to be measured and the measuring position thereof are not limited, and the ultraviolet light receiver capable of accurately measuring the ultraviolet light amount at the measuring position, and the ultraviolet light amount measuring apparatus using the same. And a method for measuring the amount of ultraviolet light.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing an example of a semiconductor layer forming apparatus for manufacturing a semiconductor (non-single-crystal optical semiconductor) containing a IIIA element and nitrogen according to the present invention. .

FIGS. 2A and 2B are schematic diagrams showing an example of an ultraviolet light receiver according to the present invention.

FIG. 3 is a schematic configuration diagram illustrating an example of an ultraviolet light quantity measuring device according to the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 layer forming apparatus 1 container 2 exhaust port 3 substrate holder 4 substrate heating heater 5, 6 quartz tube 7 high frequency coil 8 microwave waveguide 9 to 12 gas introduction tube 20 ultraviolet ray receiver 22 ultraviolet light receiving element 24 protector 26 glass substrate 28 Resin 30 Transparent conductive glass substrate 32 Semiconductor layer 34 Electrode 36 Light receiving surface 38 Light incident surface 40 Conductive wire 42 Measurement position setting surface 44 Fixing means 46 Signal detector

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2G065 AA15 AB05 AB09 AB27 BA02 BA33 BB21 BC03 BC13 BC15 BC28 BD02 DA01 DA10 DA11 DA20 4M118 AA10 AB10 BA01 CA14 CB05 HA26 HA29

Claims (14)

[Claims] 1. An ultraviolet light receiver which is installed at an arbitrary measurement position on an object to be measured and is used for measuring the amount of ultraviolet light at the measurement position, wherein: an ultraviolet light receiving element having a semiconductor layer for receiving ultraviolet light; A protective body having a measurement position installation surface for protecting the light receiving element and installed at the measurement position, and a light incident surface on which ultraviolet light to be received by the semiconductor layer is incident; and a thickness of the entire ultraviolet light receiver. Is not more than 5 mm. 2. An ultraviolet light receiver, which is installed at an arbitrary measurement position on a measurement object and is used for measuring the amount of ultraviolet light at the measurement position, wherein: an ultraviolet light receiving element having a semiconductor layer for receiving ultraviolet light; Protecting the light receiving element, and, a measurement position installation surface to be installed at the measurement position, and a protective body having a light incident surface on which the ultraviolet light to be received by the semiconductor layer is incident, comprising: An ultraviolet receiver having a height up to a light incident surface of 5 mm or less. 3. An ultraviolet light receiver which is installed at an arbitrary measurement position on an object to be measured and is used for measuring the amount of ultraviolet light at the measurement position, wherein: an ultraviolet light receiving element having a semiconductor layer for receiving ultraviolet light; Protecting the light-receiving element, and, a measurement position installation surface to be installed at the measurement position, and a protective body having a light incident surface on which ultraviolet light to be received by the semiconductor layer is incident, comprising: An ultraviolet receiver having a height up to the measuring position installation surface of 5 mm or less. 4. The apparatus according to claim 1, further comprising: a fixing unit provided on the measurement position setting surface so as to be in close contact with the measurement position.
4. The ultraviolet light receiver according to any one of items 1 to 3. 5. The ultraviolet light receiving device according to claim 1, wherein the semiconductor layer contains at least one element selected from Group IIIA elements and nitrogen. vessel. 6. The ultraviolet light receiver according to claim 1, further comprising: a signal detector electrically connected to the ultraviolet light receiver and detecting a signal output from the ultraviolet light receiver. An ultraviolet light quantity measuring device, comprising: 7. The ultraviolet light quantity measuring device according to claim 6, further comprising a plurality of said ultraviolet light receivers, wherein each of said plurality of ultraviolet light receivers is electrically connected to said signal detector. . 8. The apparatus according to claim 6, further comprising a conductor connecting the ultraviolet light receiver and the signal detector.
The ultraviolet light quantity measuring device according to 1. 9. An ultraviolet light amount measuring method using the ultraviolet light amount measuring device according to claim 6, wherein the ultraviolet light receiver in the ultraviolet light amount measuring device is:
A method for measuring the amount of ultraviolet light, wherein the method is arranged at an arbitrary measurement position on a measurement object and measures the amount of ultraviolet light at the measurement position. 10. The method according to claim 9, wherein the object to be measured is a human body. 11. The method according to claim 9, wherein the object to be measured is a semiconductor. 12. The method according to claim 9, wherein the object to be measured is a light transmitting body. 13. The ultraviolet light quantity measuring method according to claim 12, wherein a plurality of the ultraviolet light receivers are respectively arranged on a light incident surface of the light transmitting body and a surface opposite to the light incident surface. 14. The ultraviolet light quantity measuring method according to claim 9, wherein said ultraviolet light receiver is disposed in a liquid.