JP2007005687A - Optical semiconductor device and its manufacturing method - Google Patents

Optical semiconductor device and its manufacturing method Download PDF

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JP2007005687A
JP2007005687A JP2005186449A JP2005186449A JP2007005687A JP 2007005687 A JP2007005687 A JP 2007005687A JP 2005186449 A JP2005186449 A JP 2005186449A JP 2005186449 A JP2005186449 A JP 2005186449A JP 2007005687 A JP2007005687 A JP 2007005687A
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terminal electrode
pair
electrode patterns
resin layer
substrate
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Seiji Koike
Hikari Matsushita
Fumio Takamura
誠二 小池
光 松下
文雄 高村
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New Japan Radio Co Ltd
新日本無線株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device which treats short-wavelength light, for example, when it is used for a laser monitor for optical pickup suitable for blue-violet laser or the like, is small-sized and has a structure easy to manufacture, and to provide its manufacturing method. <P>SOLUTION: A pair of terminal electrode patterns 2 and 3 are provided on the substrate 1, and a light-receiving element 5 is mounted on one pattern 2 of the terminal electrode patterns. A pair of electrodes of the light-receiving element 5 are electrically connected with the pair of terminal electrode patterns 2 and 3. At least a part of exposed parts of the pair of terminal electrode patterns 2 and 3 is covered with an adhesive resin layer which improves adhesiveness of solder resist 7 or the like, and a translucent sealing resin layer 8 is provided on its surface. The translucent sealing resin layer 8 is formed of silicone resin or silicone modified epoxy resin. Also, the periphery of the translucent sealing resin layer 8 is formed in plane with the cross section of the substrate 1. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、青紫色レーザ対応の光ピックアップ用レーザモニタのような波長の短い光を受光する光半導体装置およびその製造方法に関する。 The present invention relates to an optical semiconductor device and a manufacturing method thereof for receiving the short wavelength light, such as blue-violet laser corresponding laser monitoring for the optical pickup. さらに詳しくは、波長の短い光によっても変色しない樹脂により受光素子表面を被覆しながら、基板との密着性がよく、しかも簡単に製造することができる構造の光半導体装置およびその製造方法に関する。 More particularly, while covering the light receiving element surface of a resin does not change color even by a short-wavelength light, good adhesion to the substrate, moreover relates to an optical semiconductor device and a manufacturing method thereof having the structure can be easily manufactured.

電子機器の軽薄短小化の進展に伴い、LEDや受光素子などの光半導体装置も、より一層の小型化が要求され、表面実装が可能なチップ型の光半導体装置が多用されている。 With the progress of miniaturization of electronic devices, an optical semiconductor device such as an LED or light receiving element is also more is further miniaturization demand, an optical semiconductor device of a chip type that can be surface mounted is frequently used. たとえば赤色系のチップ型光半導体装置は、図5に示されるように、ガラスエポキシなどからなる基板21の両端部に一対の端子電極パターン22、23が形成され、一方の端子電極パターン22上に導電性接着剤24を介して受光素子25が一方の電極を電気的に接続しながらダイボンディングされ、受光素子25の他方の電極はワイヤ26によって他方の端子電極パターン23と電気的に接続されている。 For example red chip type optical semiconductor device, as shown in FIG. 5, the pair of terminal electrode patterns 22 and 23 are formed at both ends of the substrate 21 made of glass epoxy, on the one terminal electrode patterns 22 light-receiving element 25 through the conductive adhesive 24 is die-bonded with electrically connects one electrode, the other electrode of the light receiving element 25 is the other terminal electrode pattern 23 electrically connected to the wire 26 there. そして、受光素子25およびワイヤボンディング部分がトランスファモールドなどによりエポキシ樹脂などからなる透光性樹脂層28により被覆されている。 Then, it is covered with a translucent resin layer 28 light-receiving element 25 and the wire bonding portion is made of epoxy resin or the like transfer molding. 一対の端子電極パターン22、23は、基板21に設けられる貫通孔内の埋込み電極22a、23aを介して基板21の裏面に設けられる裏面電極22b、23bに接続され、そのまま回路基板などに実装することができる構造になっている。 A pair of terminal electrode patterns 22 and 23, the buried electrode 22a of the through hole provided in the substrate 21, the back electrode 22b provided on a rear surface of the substrate 21 through the 23a, is connected to 23b, it is mounted such as it is a circuit board It has a structure that can be.

一方、受光素子に気密性が要求される場合とか、受光する光が青紫色などの短波長の光でエポキシ樹脂では変色するような場合には、たとえば図6に示されるような構成のものが知られている(たとえば特許文献1参照)。 On the other hand or if you do not want the air-tightness to the light receiving element is required, if the light received is such that color change in the short wavelength of the epoxy resin with light such as blue-violet, for example those described configuration shown in FIG. 6 known (e.g. see Patent Document 1). すなわち、図6において、中心部に凹部が形成されたキャビティ型の基板31の両端部に端子電極パターン32、33が形成され、その間の基板31上に受光素子35がマウントされ、その一対の電極がワイヤ36により一対の端子電極パターン32、33に接続されている。 That is, in FIG. 6, the terminal electrode patterns 32 and 33 are formed at both ends of the substrate 31 of the cavity mold having a concave portion formed in the center portion, the light receiving element 35 is mounted on between the substrate 31, the pair of electrodes There is connected to the pair of terminal electrode patterns 32, 33 by a wire 36. そして、キャビティ型の基板31の上面にガラス板38が接着されることにより、受光素子35が気密封止される構造になっている。 By glass plate 38 is bonded to the upper surface of the substrate 31 of the cavity mold has a structure in which the light receiving element 35 is hermetically sealed. なお、埋込み電極32a、33aおよび裏面電極32b、33bは前述の例と同じである。 Incidentally, the buried electrodes 32a, 33a and the back electrode 32 b, 33b is the same as the previous example.
特開2003−163297号公報 JP 2003-163297 JP

前述の図5に示されるように、エポキシ樹脂を用いてトランスファモールドなどにより受光素子などを封止すると、非常に小型で、簡単に製造することができて好都合である。 As shown in FIG. 5 described above, the sealing of such light-receiving element by such transfer molding using an epoxy resin, is very compact, it is advantageous to be able to be easily manufactured. しかし、受光素子の取り扱う光の波長が青紫光から紫外光に至ると、エポキシ樹脂では使用と共に光のエネルギーで変色したり、劣化したりするため、透過する光を減衰させてしまい、信頼性が非常に低下するという問題がある。 However, when the wavelength of the light handled by the light receiving element reaches the ultraviolet light from the blue-violet light, or discoloration in the energy of light with use in epoxy resin, for deteriorated, the transmitted light will attenuate, reliability there is a problem that very reduced. また、図6に示されるように、ガラス板などにより封止する構造にすれば、紫外光などの波長の短い光に対しても非常に安定であるが、小型化を達成することができないと共に、組立工程に非常に工数を要し、コストダウンの妨げになるという問題がある。 Further, as shown in FIG. 6, if a structure for sealing by such as a glass plate, are very stable against short wavelength light such as ultraviolet light, the inability to achieve miniaturization very required steps in the assembly process, there is a problem that hinders cost reduction.

本発明は、このような問題を解決し、青紫色レーザなどに対応する光ピックアップ用レーザモニタに使用する場合など、短波長の光を取り扱う光半導体装置を小型で、かつ、簡単に製造することができる構造の光半導体装置およびその製造方法を提供することを目的とする。 The present invention is, that such resolve the problem, such as when using the laser monitor for an optical pickup, corresponding to, for example blue-violet laser, the optical semiconductor device that handles light with a short wavelength a small and easy to manufacture and to provide an optical semiconductor device and a manufacturing method thereof structure capable.

本発明による光半導体装置は、支持手段により支持され、相対向して設けられる一対の端子電極パターンと、該一対の端子電極パターンの一方または該一対の端子電極パターンの間にマウントされる受光素子と、該受光素子の一対の電極を前記一対の端子電極パターンと電気的に接続する接続手段と、該接続手段および前記受光素子とを被覆する透光性封止樹脂層とを具備し、前記透光性封止樹脂層がシリコーン樹脂またはシリコーン変成エポキシ樹脂からなると共に、該透光性封止樹脂層と前記一対の端子電極パターンおよび前記支持手段との両方に接着性を有する接着性樹脂層が前記一対の端子電極パターンおよび支持手段の露出部の少なくとも一部に設けられ、該接着性樹脂層の表面に前記透光性封止樹脂層が設けられると共に、該透 The optical semiconductor device according to the invention is supported by the support means, opposed to the pair of terminal electrode patterns provided, the light receiving elements which are mounted between one or the pair of terminal electrode patterns of the pair of terminal electrode patterns If, comprising a connecting means for connecting the pair of electrodes of the light receiving element and the pair of terminal electrode patterns and electrically, and a translucent sealing resin layer covering the said connection means and said light receiving element, wherein with translucent sealing resin layer is made of silicone resin or silicone-modified epoxy resin, the adhesive resin layer having adhesion to both of said the light transmitting sealing resin layer pair of terminal electrode patterns and said support means There is provided on at least part of the exposed portion of the pair of terminal electrode patterns and the support means, together with the to surface of the adhesive resin layer translucent sealing resin layer is provided, the transparent 性封止樹脂層の外周は、前記支持手段と同時に切断された切断面を有することを特徴とする。 Periphery of sexual sealing resin layer is characterized by having a cutting surface which is cut at the same time as the supporting means.

ここに支持手段とは、端子電極パターンを支持するものを意味し、たとえば基板表面に端子電極パターンを形成する場合はその基板を、いわゆるコアレス基板と呼ばれる端子電極パターンを電鋳法または金属板のパンチングなどにより形成する場合には、端子電極パターンの形状を保持する手段を意味する。 And here the support means, means supports the terminal electrode pattern, for example, the substrate case of forming the terminal electrode patterns on a substrate surface, a terminal electrode patterns so-called coreless substrate electroforming or metal plate when formed by a punching means means for retaining the shape of the terminal electrode patterns. また、受光素子とは、405nm付近の青紫色から短波長側に吸収帯を持つ半導体受光素子を意味し、さらに接着性樹脂とは、シリコーン樹脂などと端子電極パターンや基板などとの接着性よりも、シリコーン樹脂などとの間および端子電極パターンや基板などとの間の接着性が良好に得られる樹脂を意味し、たとえばソルダーレジストなどが該当する。 Further, the light receiving element, means a semiconductor light-receiving element having an absorption band on the shorter wavelength side from the blue violet near 405 nm, and more adhesive resin, from adhesion and the like, such as the terminal electrode patterns and the substrate silicone resin also refers to adhesion satisfactorily obtained resin between such and between the terminal electrode patterns and the substrate with the silicone resin or the like, such as a solder resist is applicable.

また、本発明による光半導体装置の製造方法は、(a)基板上に一対の端子電極パターンを複数組分形成し、前記基板および前記端子電極パターンの一部を露出するように前記基板および前記端子電極パターンと透光性封止樹脂層とを接着させる接着性樹脂層を形成して、露出する前記複数組の端子電極パターンのそれぞれの一方の電極上または前記基板上で一対の端子電極パターンの間に受光素子をマウントし、(b)該受光素子の一対の電極を前記一対の端子電極パターンと電気的接続手段により接続し、(c)前記複数組の端子電極パターンの外周に樹脂の流れ止め用ダムを形成し、(d)前記受光素子および前記接続手段を被覆するようにシリコーン樹脂またはシリコーン変性エポキシ樹脂からなる透光性封止樹脂を前記ダム内に塗 The manufacturing method for an optical semiconductor device according to the present invention, (a) a plurality of sets to form a pair of terminal electrode patterns on a substrate, said substrate and said to expose a portion of the substrate and the terminal electrode pattern to form an adhesive resin layer for bonding the terminal electrode patterns and the translucent sealing resin layer, wherein the plurality of sets of the pair of terminal electrode patterns on each on one electrode or the substrate of the terminal electrode patterns exposed mount the light receiving element between, (b) a pair of electrodes of the light receiving element are connected by the pair of terminal electrode patterns and the electrical connection means, the resin on the outer periphery of the (c) said plurality of sets of terminal electrodes pattern forming a dam for flow stop, (d) coating a translucent sealing resin made of silicone resin or silicone-modified epoxy resin so as to cover the light-receiving element and said connection means in said dam し、(e)前記透光性封止樹脂の脱泡処理を行い、(f)加熱処理をすることにより前記透光性封止樹脂の硬化処理を行い、(g)前記基板を前記透光性封止樹脂と共に切断することにより前記複数組の端子電極パターン上に形成された光半導体装置を個片化することを特徴とする。 And, (e) performs the degassing process of the translucent sealing resin, (f) performs the curing of the translucent sealing resin by a heat treatment, (g) the substrate the transparent wherein the singulating optical semiconductor devices formed on the plurality of sets of terminals electrode pattern by cutting with sexual sealing resin.

本発明によれば、青紫色の光を受光する光半導体装置でも、シリコーン樹脂またはシリコーン変成エポキシ樹脂により封止しているため、封止した透光性樹脂が光により変質したり、変色したりすることがない。 According to the present invention, in an optical semiconductor device that receives light violet, because it is sealed with a silicone resin or a silicone modified epoxy resin, or alteration sealed translucent resin by light, discolored It is not to be. 一方、シリコーン樹脂などは、エポキシ樹脂などと比べると、基板や端子電極パターンとは接着性が非常に劣る。 On the other hand, a silicone resin, as compared with an epoxy resin, very poor adhesion to the substrate and the terminal electrode patterns. そのため、シリコーン樹脂などにより封止した光半導体装置では、変色などが生じなくても、基板や端子電極パターンからの剥離などが生じて、ワイヤボンディング部分に断線などが生じたり、受光素子と透光性封止樹脂層との間に剥離による空隙が生じるというような問題が生じる。 Therefore, in the optical semiconductor device encapsulated by a silicone resin, without cause discoloration, peeling from the substrate and the terminal electrode pattern occurs, is or caused disconnection in the wire bonding portion, the light receiving element and a light-transmitting problems such as voids due to separation between the sexual sealing resin layer occurs. しかしながら、本発明では、基板表面や端子電極パターンの露出面にソルダーレジストなどの基板や端子電極パターンと透光性封止樹脂層との接着性を向上させる接着性樹脂層が設けられているため、シリコーン樹脂などとの接着性が向上し、前述のような透光性封止樹脂層の剥離の問題を全く生じなくなる。 However, in the present invention, since the adhesive resin layer to improve the adhesion between the substrate and the terminal electrode patterns and the translucent sealing resin layer such as solder resist on the exposed surface of the substrate surface and the terminal electrode patterns are provided improves the adhesion between a silicone resin, not at all peeling occurred problems of translucent sealing resin layer as described above.

さらに、本発明の製造方法によれば、大きな基板に複数組の端子電極パターンを形成して、それぞれに受光素子をマウントして組み立てた後に、その大きな基板全体にシリコーン樹脂などを滴下して硬化した後に、各光半導体装置に分離できるように基板とシリコーン樹脂などとを一緒に切断して個片化しているため、トランスファモールドしてから個片化するのと同様の簡単な工程で個々の光半導体装置を得ることができる。 Further, according to the manufacturing method of the present invention, by forming a plurality of sets of terminals electrode pattern large substrates, after assembly to mount the light receiving element respectively, by the dropwise addition of a silicone resin to the entire large substrate cured after, since the individual pieces by cutting the like between the substrate and the silicone resin can be separated to each optical semiconductor device together, the individual in the same simple process and to individual pieces from the transfer mold it is possible to obtain an optical semiconductor device. その結果、透光性封止樹脂層と基板などは同じ切り口の切断面を有する、直方体形状の光半導体装置を非常に簡単な製造工程で得ることができる。 As a result, like the translucent sealing resin layer and the substrate has a cut surface of the same cut, it can be an optical semiconductor device having a rectangular parallelepiped shape is obtained in a very simple manufacturing process.

つぎに、図面を参照しながら本発明の光半導体装置およびその製造方法について説明をする。 Next, with reference to the accompanying drawings optical semiconductor device and a manufacturing method thereof of the present invention will be described. 本発明による光半導体装置は、図1にその一実施形態の断面説明図が示されるように、支持手段、たとえば基板1に支持されて相対向して一対の端子電極パターン2、3が設けられ、その一対の端子電極パターンの一方またはその間(図1に示される例では、一方の端子電極パターン2上)に受光素子5がマウントされている。 The optical semiconductor device according to the present invention, as cross-sectional illustration of one embodiment thereof is shown in FIG. 1, the support means, the pair of terminal electrode patterns 2 and 3 are provided to face is supported for example on the substrate 1 (in the example shown in FIG. 1, one terminal electrode pattern 2 above) either or during the pair of terminal electrode patterns receiving element 5 is mounted on. 図1に示される例では、この受光素子5の一対の電極の一方が導電性接着剤(接続手段)4を介して一方の端子電極パターン2に接続され、他方の電極はワイヤ(接続手段)6がボンディングされることにより他方の端子電極パターン3に電気的に接続されている。 In the example shown in FIG. 1, the pair of one conductive adhesive electrodes (connecting means) of the light receiving element 5 4 is connected to one terminal electrode pattern 2 through, the other electrode wire (connecting means) 6 is electrically connected to the other terminal electrode pattern 3 by being bonded. この一対の端子電極パターン2、3の露出部の少なくとも一部はソルダーレジスト7などの接着性を向上させる接着性樹脂層により被覆され、導電性接着剤4、ワイヤ6および受光素子5を被覆するように透光性封止樹脂層8が設けられている。 At least a portion of the exposed portions of the pair of terminal electrode patterns 2 and 3 are covered with the adhesive resin layer to improve adhesion, such as a solder resist 7, the conductive adhesive 4, to cover the wires 6 and the light receiving element 5 translucent sealing resin layer 8 is provided so as. この透光性封止樹脂層8は、シリコーン樹脂またはシリコーン変成エポキシ樹脂からなり、かつ、透光性封止樹脂層8の外周は、一対の端子電極パターン2、3を支持する基板1(支持手段)と同時に切断された切断面を有している。 The translucent sealing resin layer 8 is made of silicone resin or silicone-modified epoxy resin, and the outer periphery of the translucent sealing resin layer 8, the substrate 1 supports the pair of terminal electrode patterns 2 and 3 (support has means) at the same time cut the cut surface.

図1に示される例では、端子電極パターン2、3を支持する支持手段として、基板1が用いられているが、たとえば電鋳法によるコアレス基板の場合には、透光性封止樹脂層8によって形状が保持される端子電極パターン2、3自体が支持手段を構成することになる。 In the example shown in FIG. 1, as a supporting means for supporting the terminal electrode patterns 2 and 3, but the substrate 1 is used, when the coreless substrate by for example electroforming, translucent sealing resin layer 8 the terminal electrode patterns 2 and 3 themselves shape is held constitute the support means by. 基板1を用いる場合には、従来の赤色系の光半導体装置の場合には、ガラスエポキシなどの簡単な樹脂基板が用いられるが、青紫色など波長の短い光半導体装置用には、この基板部分にも光が照射されて基板自身が劣化し、透光性封止樹脂層8などとの剥離が生じやすくなるため、このような短波長の光に対しても劣化しにくいアルミナ基板など、セラミックスを用いることが好ましい。 In the case of using a substrate 1, in the case of the conventional red light semiconductor device is simple resin substrate such as glass epoxy is used, for short optical semiconductor device wavelengths such as violet, the substrate portion substrate itself is deteriorated light is irradiated to, for peeling and the like translucent sealing resin layer 8 is likely to occur, such as such short wavelength does not easily deteriorate alumina substrate against light, ceramic it is preferably used. このような基板を用いる場合の端子電極パターンは、たとえば基板1の表面に金属膜を蒸着してパターニングするか、銀ペーストなどの導電性材料を印刷などによりパターン形成して焼成する方法などにより形成することができる。 Terminal electrode pattern of the case of using such a substrate is formed, for example, or patterned by depositing a metal film on the surface of the substrate 1, such as by printing a conductive material such as silver paste and a method of firing the patterned can do.

また、基板1を用いる場合には、図1に示されるように、基板1の両端部に設けられる貫通孔内に形成される埋込み電極2a、3aを介して裏面電極2b、3bが形成されることが、回路基板などに実装する場合に直接表面実装することができて都合がよい。 In the case of using the substrate 1, as shown in FIG. 1, the back electrode 2b, 3b are formed through a buried electrodes 2a, 3a are formed in the through hole provided at both ends of the substrate 1 it can conveniently be surface mounted directly to the case of mounting on a circuit board.

受光素子5は、たとえば青紫色の光を検出することができるように、シリコン半導体層によりpn接合が形成されている。 Light-receiving element 5, for example to be able to detect the light of the blue-violet, pn junction is formed by a silicon semiconductor layer. この受光素子の一対の電極が、後述する図4に示される例のように、共に一方の面に形成されている場合には、金線などのワイヤをボンディングすることにより一対の端子電極パターン2、3と接続され、図1に示される例のように、一対の電極が受光素子5の両面に形成されている場合には、裏面側の電極は導電性接着剤4により直接一方の端子電極2と電気的に接続することができ、他方の電極は金線などのワイヤ6により他方の端子電極パターン3と電気的に接続される。 A pair of electrodes of the light receiving element, as in the example shown in FIG. 4 to be described later, if they are formed on both one surface, the pair of terminal electrode patterns by bonding wires, such as gold wire 2 is connected to the 3, as in the example shown in FIG. 1, when the pair of electrodes are formed on both sides of the light-receiving element 5, the back surface side of the electrode is directly one terminal electrodes by a conductive adhesive 4 It can be connected 2 and electrically, and the other electrode is connected, such as the wire 6 by the other terminal electrode pattern 3 and the electrically gold wire.

ソルダーレジスト7は、熱硬化性樹脂あるいは光硬化性樹脂からなるもので、ロールコートあるいはラミネートすることにより端子電極パターン2、3や基板1の表面の露出部に塗布して接着性樹脂層とするものである。 The solder resist 7 is made of a thermosetting resin or a photocurable resin, it is applied to the exposed portion of the surface of the terminal electrode patterns 2 and 3 and the substrate 1 and the adhesive resin layer by roll coating or lamination it is intended. このソルダーレジスト7は、金属膜からなる端子電極パターン2、3や、アルミナなどからなる基板1とも、またシリコーン樹脂やシリコーン変成エポキシ樹脂などとも接着性がよく、このソルダーレジスト7を介在させることにより、この上に被覆される透光性封止樹脂層8の基板1などに対する接着性を向上させることができる。 The solder resist 7, and the terminal electrode patterns 2 and 3 made of a metal film, both the substrate 1 made of alumina, also good and the adhesive also silicone resins and silicone modified epoxy resins, by interposing the solder resist 7 , it is possible to improve the adhesion to such substrate 1 of translucent sealing resin layer 8 is coated over this.

透光性封止樹脂層8は、シリコーン樹脂またはシリコーン変成エポキシ樹脂を用いることができる。 Translucent sealing resin layer 8, it is possible to use a silicone resin or a silicone modified epoxy resin. すなわち、前述のように、従来のエポキシ樹脂では、青紫色などの波長の短い光を透過させると変色や劣化が生じ、さらには剥離などが生じやすくなるため、用いることができず、波長の短い光に対しても変質しない樹脂としてシリコーン樹脂などが用いられている。 That is, as described above, the conventional epoxy resin, cause discoloration and deterioration and to transmit light of a short wavelength such as blue-violet, to further comprises stripping the like easily occurs, can not be used, a short wavelength and silicone resin is used as resin not deteriorated even to light. たとえばシリコーン樹脂とエポキシ樹脂とで照射する光の波長を変えたときの光の透過率を調べた結果が図2に示されるように、シリコーン樹脂Aでは光の波長が200nm程度までは殆ど減衰しないのに対して、エポキシ樹脂Bでは400nm近辺から急激に透過率が低下し、波長の短い光に対しては使用することができないことが明らかである。 For example, as a result of examining the transmittance of light when changing the wavelength of light to be irradiated with the silicone resin and epoxy resin are shown in Figure 2, the wavelength of light in a silicone resin A is hardly attenuated to about 200nm whereas, it decreases rapidly transmittance from 400nm near the epoxy resin B, and is obvious that it can not be used for short wavelength light.

一方で、シリコーン樹脂などはエポキシ樹脂などと比べると、流動性に劣り、また、端子電極パターンや基板などとの接着性も劣る。 On the other hand, when a silicone resin is compared with an epoxy resin, poor fluidity, also inferior adhesiveness and the like terminal electrode pattern and the substrate. しかし、本発明では、これらの問題を解決しながら、これらの短波長の光に対しても変質しない樹脂を用いることにより透光性封止樹脂層8を形成している。 However, in the present invention, while solving these problems, to form a translucent sealing resin layer 8 by using a resin which does not degraded even for these short-wavelength light. すなわち、接着性に関しては、前述のソルダーレジスト7などの接着性樹脂層を透光性封止樹脂層8の接触する部分に介在させることにより改善し、トランスファモールドなどのモールド成形をすることができない問題に関しては、後述する製造方法で説明をするように、シリコーン樹脂などをポッティングすることによっても、多数の光半導体装置を一度に形成して、ダイシングするだけで簡単に製造する方法を採用することにより解決したものである。 That is, for the adhesive can not be improved by interposing the contact portion of the translucent sealing resin layer 8 an adhesive resin layer such as solder resist 7 above, the molding of such transfer molding for the problem, as explained in the manufacturing method described below, also by potting and silicone resin, a large number of optical semiconductor devices formed at one time, possible to employ a method of easily manufacturing simply by dicing one in which was resolved by.

本発明の光半導体装置によれば、受光素子やワイヤボンディング部分などを被覆して封止する透光性封止樹脂層にシリコーン樹脂またはシリコーン変成エポキシ樹脂を用いているため、長時間の使用に対しても変質することがなく、光の透過率は殆ど低下しない。 According to the optical semiconductor device of the present invention, the use of a silicone resin or a silicone modified epoxy resin to translucent sealing resin layer for sealing covers and the light receiving element, a wire bonding portion, for use over a long period of time without altered even for the transmittance of light is hardly reduced. 一方、シリコーン樹脂と接触する端子電極パターン2、3や基板1などの支持手段の露出部にソルダーレジストなどの接着性を向上させる接着性樹脂層が介在されているため、一般的には接着性が劣るシリコーン樹脂層などでも剥がれなどを生じることなく接着性を維持することができる。 Meanwhile, since the adhesive resin layer to improve adhesion, such as a solder resist on the exposed portion of the support means, such as a terminal electrode pattern 2 and the substrate 1 in contact with the silicone resin is interposed, in general adhesive it is possible to maintain adhesion without causing delamination in such poor silicone resin layer. その結果、長時間の使用に対しても、透過率の低下や透光性封止樹脂層の剥離などによる透過率の低下などもなく、非常に信頼性の高い光半導体装置が得られる。 As a result, even for prolonged use, no such decrease in transmittance due to peeling of the transmittance decreases and translucent sealing resin layer, very reliable optical semiconductor device is obtained. また、シリコーン樹脂などを複数個の受光素子分まとめて塗布した後に、基板などとともに切断して個片化することにより、切断面が基板などと同一面になり、完全な直方体形状の小型な光半導体装置を安価に得ることができる。 Further, after applying a silicone resin plurality of light receiving elements content collectively, by individual pieces by cutting with such a substrate, the cut surface becomes flush with like substrate, a small light of the complete rectangular parallelepiped it is possible to obtain a semiconductor device at low cost.

つぎに、図1に示される光半導体装置の製造方法について、図3を参照しながら説明する。 Next, a method of manufacturing the optical semiconductor device shown in FIG. 1 will be described with reference to FIG. まず図3(a)に示されるように、支持手段(基板1)の表面に一対の端子電極パターン(図示せず)を複数組分形成して、その複数組の端子電極パターンのそれぞれの一方の電極上に受光素子5をマウントする。 First, as shown in FIG. 3 (a), the surface (not shown) a pair of terminal electrodes pattern a plurality of sets formed of the support means (substrate 1), one of each of the plurality of sets of terminal electrodes pattern mounting a light-receiving element 5 on the electrode. なお、図3では、端子電極パターンを省略して図示していないが、金属膜を真空蒸着などにより被膜形成してエッチングするか、スクリーン印刷などによりパターン状に塗布して焼成することにより形成することができる。 In FIG. 3, although not shown by omitting the terminal electrode patterns are formed by the metal film and film formation by vacuum deposition or etching, baking is applied in a pattern by screen printing be able to. この際、図示されていないが、前述のように基板1に貫通孔を設けておき、その貫通孔内に埋込み電極を形成して、基板1の裏面に設ける裏面電極と接続しておくことにより、図1に示されるような表面実装型の光半導体装置にすることができる。 In this case, although not shown, by previously connected may be provided through holes in the substrate 1 as described above, by forming a buried electrode in the through hole, a back electrode provided on the back surface of the substrate 1 , it can be surface-mounted type optical semiconductor device as shown in FIG.

つぎに、基板1および端子電極パターン(図示せず)の受光素子のマウント部およびワイヤボンディング部を除く表面に、基板1および端子電極パターンと透光性封止樹脂との接着性を向上させるソルダーレジストを設ける。 Next, on the surface excluding the mounting portion and the wire bonding portion of the light-receiving element of the substrate 1 and the terminal electrode patterns (not shown), solder to improve the adhesion between the substrate 1 and the terminal electrode patterns and the translucent sealing resin a resist.

つぎに、図3(b)に示されるように、受光素子5の一対の電極を一対の端子電極パターンと電気的接続手段により接続する。 Next, as shown in FIG. 3 (b), connected by a pair of terminal electrode patterns and the electrical connection means a pair of electrodes of the light-receiving element 5. なお、この例では、受光素子5の一方の電極は素子の裏面に形成されているため、(a)のダイボンディングの際に導電性接着剤(図示せず)により接続されており、もう一方の電極が図3(b)に示されるように、ワイヤ6を介して接続されている。 In this example, since the one electrode of the light receiving element 5 is formed on the back surface of the element are connected by a conductive adhesive in the die bonding (a) (not shown), other one of the electrode as shown in FIG. 3 (b), it is connected through a wire 6.

つぎに、図3(c)に示されるように、複数組の端子電極パターンの外周に、たとえばチクソ性の高い(形状保持性の高い)シリコーンまたはエポキシ樹脂により、樹脂の流れ止め用ダム11を形成する。 Next, as shown in FIG. 3 (c), the outer circumference of the plurality of sets of terminals electrode pattern, for example by high thixotropy (high shape retention) silicone or epoxy resin, the resin flow-preventing dam 11 Form.

その後、図3(d)に示されるように、受光素子5およびワイヤボンディング部分(接続手段)を被覆するようにシリコーン樹脂またはシリコーン変性エポキシ樹脂からなる透光性封止樹脂を、たとえばディスペンサ12などにより、たとえば矢印Cの方向に移動しながら、ダム11内の全面に塗布する。 Thereafter, as shown in FIG. 3 (d), a translucent sealing resin made of silicone resin or silicone-modified epoxy resin so as to cover the light-receiving element 5 and the wire bonding portions (connecting means), for example the dispenser 12, etc. by, for example, while moving in the direction of arrow C, and applied to the entire surface of the dam 11.

その後、図3(e)に示されるように、2.6kPa、50〜60℃程度で、30〜120分程度の熱処理をすることによりシリコーン樹脂内の泡13を放出する脱泡処理をする。 Thereafter, as shown in FIG. 3 (e), 2.6 kPa, at about 50-60 ° C., a defoaming process of releasing the foam 13 in the silicone resin by heat treatment at about 30 to 120 minutes. そして、図3(f)に示されるように、引き続き80℃程度で、6時間程度、150℃程度で2時間程度の加熱処理をすることによりシリコーン樹脂などの硬化処理を行って、受光素子5およびワイヤ6の部分を被覆した透光性封止樹脂層8を形成する。 Then, as shown in FIG. 3 (f), in subsequently about 80 ° C., about 6 hours, and subjected to hardening treatment such as a silicone resin by the heat treatment for about 2 hours at about 0.99 ° C., the light receiving element 5 and forming a translucent sealing resin layer 8 coated with a portion of the wire 6. その後、図3(g)に示されるダイシングラインDで基板1および透光性封止樹脂層8を同時に切断することにより、図3(h)に示されるように、1個づつに個片化された光半導体装置が得られる。 Then, by simultaneously cutting the substrate 1 and the translucent sealing resin layer 8 at a dicing line D shown in FIG. 3 (g), as shown in FIG. 3 (h), singulated one by one optical semiconductor device is obtained.

本発明の製造方法によれば、シリコーン樹脂などの流動性がよくないことと、脱泡が必要なため、トランスファモールドなどで一体成形をすることができないが、複数個の受光素子を一度に透光性封止樹脂層8で被覆して、切断するだけで大量生産することができるため、非常に安価に得ることができる。 According to the production method of the present invention, and not good fluidity such as silicone resin, for defoaming is required, it is not possible to integrally molded in such transfer molding, Toru a plurality of light receiving elements at a time coated with light-sealing resin layer 8, it is possible to mass-produced simply by cutting, it is possible to obtain very low cost.

前述の例は、基板1上に端子電極パターンを形成してその基板を切断することにより個片化する例であったが、前述のように、受光素子の光の波長が短い場合には、基板も光により劣化しない材料を用いる必要がある。 Although the foregoing example was an example of individual pieces by cutting the substrate to form the terminal electrode pattern on the substrate 1, as described above, when the wavelength of the light receiving element is short, substrate also needs to use a material that does not deteriorate by light. このような観点から、たとえばリードのみからなるコアレス基板を用いることもできる。 From this point of view, it is also possible to use a coreless substrate, for example made of lead alone. コアレス基板を用いる場合は、別の支持基板上に端子電極パターンを形成し、図3に示す工程(a)〜(g)に相当する製造工程に従い、光半導体装置を形成した後、別の支持基板を除去した後、個片化すればよい。 When using a coreless substrate, and forming a terminal electrode pattern on another supporting substrate, according to the manufacturing process corresponding to step (a) ~ (g) shown in FIG. 3, after forming the optical semiconductor device, another support after removal of the substrate may be singulated. この構造例が図4に図1と同様の断面説明図で示されている。 This structure example is shown in the same sectional view as FIG. 1 in FIG.

図4において、図1と同じ部分には同じ符号を付してあるが、端子電極パターン2、3は、たとえば金/ニッケル/金の三層構造などからなる0.06〜0.08mm厚程度の金属皮膜により形成されている。 In FIG. 4, the same reference sign is assigned to the same parts as in FIG. 1, the terminal electrode patterns 2 and 3, for example, gold / nickel / 0.06~0.08Mm thickness of about made of three-layer structure of gold It is formed by a metal coating. また、図4に示される例では、受光素子5の一対の電極が両方とも表面側に形成される例で、この場合は、端子電極パターン2、3との電気的接続は、図4に示されるように、両電極ともワイヤ6をボンディングすることにより行われる。 Further, in the example shown in FIG. 4, an example in which the pair of electrodes of the light receiving element 5 are formed on both the surface side, in this case, electrical connection between the terminal electrode patterns 2 and 3, shown in FIG. 4 as it is performed by bonding the wire 6 both electrodes. その他の透光性封止樹脂層8などの形成方法などは、図1に示される例と同じで、その説明を省略する。 Etc. forming method and other translucent sealing resin layer 8, the same as the example shown in FIG. 1, the description thereof is omitted.

本発明による光半導体装置の一実施形態の断面図である。 It is a cross-sectional view of one embodiment of an optical semiconductor device according to the present invention. シリコーン樹脂とエポキシ樹脂の光の波長に対する透過率の差を示す図である。 It is a diagram showing a difference in transmittance to the wavelength of the silicone resin and epoxy resin light. 図1の光半導体装置の製造工程を示す図である。 It is a diagram showing a manufacturing process of the optical semiconductor device of FIG. 本発明の光半導体装置の他の実施形態を示す断面図である。 It is a sectional view showing another embodiment of an optical semiconductor device of the present invention. 従来の光半導体装置の一例を示す断面図である。 Is a sectional view showing an example of a conventional optical semiconductor device. 従来の光半導体装置の一例を示す断面図である。 Is a sectional view showing an example of a conventional optical semiconductor device.

符号の説明 DESCRIPTION OF SYMBOLS

1 基板 2 端子電極パターン 3 端子電極パターン 4 導電性接着剤 5 受光素子 6 ワイヤ 7 ソルダーレジスト 8 透光性封止樹脂層 1 substrate 2 terminal electrode pattern 3 terminal electrode pattern 4 the conductive adhesive 5 receiving element 6 wire 7 a solder resist 8 translucent sealing resin layer

Claims (2)

  1. 支持手段により支持され、相対向して設けられる一対の端子電極パターンと、該一対の端子電極パターンの一方または該一対の端子電極パターンの間にマウントされる受光素子と、該受光素子の一対の電極を前記一対の端子電極パターンと電気的に接続する接続手段と、該接続手段および前記受光素子とを被覆する透光性封止樹脂層とを具備し、前記透光性封止樹脂層がシリコーン樹脂またはシリコーン変成エポキシ樹脂からなると共に、該透光性封止樹脂層と前記一対の端子電極パターンおよび前記支持手段との両方に接着性を有する接着性樹脂層が前記一対の端子電極パターンおよび支持手段の露出部の少なくとも一部に設けられ、該接着性樹脂層の表面に前記透光性封止樹脂層が設けられると共に、該透光性封止樹脂層の外周は、前記 Is supported by the support means, a pair of terminal electrode patterns provided to face a light receiving element which is mounted between one or the pair of terminal electrode patterns of the pair of terminal electrode patterns, a pair of light receiving elements and connecting means for the electrodes for connecting the pair of terminal electrode patterns and electrically, comprising a translucent sealing resin layer covering the said connection means and said light receiving element, the translucent sealing resin layer with a silicone resin or a silicone modified epoxy resin, both the adhesive resin layer is the pair of terminal electrode patterns and having adhesion to the the light transmitting sealing resin layer and the pair of terminal electrode patterns and said support means at least a portion provided with the translucent sealing resin layer with provided on the surface of the adhesive resin layer, the outer periphery of the light-transmissive sealing resin layer of the exposed portion of the support means, the 持手段と同時に切断された切断面を有することを特徴とする光半導体装置。 Optical semiconductor device and having a cutting surface which is cut at the same time as the lifting means.
  2. (a)基板上に一対の端子電極パターンを複数組分形成し、前記基板および前記端子電極パターンの一部を露出するように前記基板および前記端子電極パターンと透光性封止樹脂層とを接着させる接着性樹脂層を形成して、露出する前記複数組の端子電極パターンのそれぞれの一方の電極上または前記基板上で一対の端子電極パターンの間に受光素子をマウントし、(b)該受光素子の一対の電極を前記一対の端子電極パターンと電気的接続手段により接続し、(c)前記複数組の端子電極パターンの外周に樹脂の流れ止め用ダムを形成し、(d)前記受光素子および前記接続手段を被覆するようにシリコーン樹脂またはシリコーン変性エポキシ樹脂からなる透光性封止樹脂を前記ダム内に塗布し、(e)前記透光性封止樹脂の脱泡処理を行 A pair of terminal electrode patterns on (a) the substrate a plurality of sets formed, and said substrate and said terminal electrode patterns and the translucent sealing resin layer so as to expose a portion of the substrate and the terminal electrode pattern to form an adhesive resin layer for bonding, mounting the light receiving element between said plurality of sets of the pair of terminal electrode patterns on each on one electrode or the substrate of the terminal electrode patterns exposed, (b) the a pair of electrodes of the light receiving element are connected by the pair of terminal electrode patterns and the electrical connection means, to form a (c) said plurality of sets of dams resin flow stop on the outer periphery of the terminal electrode patterns, (d) said light receiving applying a translucent sealing resin made of silicone resin or silicone-modified epoxy resin so as to cover the element and the connecting means in the dam, (e) lines to a defoaming treatment of the translucent sealing resin 、(f)加熱処理をすることにより前記透光性封止樹脂の硬化処理を行い、(g)前記基板を前記透光性封止樹脂と共に切断することにより前記複数組の端子電極パターン上に形成された光半導体装置を個片化することを特徴とする光半導体装置の製造方法。 By the (f) heat treatment is performed to a curing treatment of the translucent sealing resin, on said plurality of sets of terminals electrode pattern by cutting with (g) the substrate the translucent sealing resin method of manufacturing an optical semiconductor device which is characterized in that singulation an optical semiconductor device formed.
JP2005186449A 2005-06-27 2005-06-27 Optical semiconductor device and its manufacturing method Pending JP2007005687A (en)

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JPH08316504A (en) * 1995-05-19 1996-11-29 Sony Corp Optical part and manufacturing method thereof
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JPH06100762A (en) * 1992-09-21 1994-04-12 Nippon Kayaku Co Ltd Epoxy resin composition
JPH08316504A (en) * 1995-05-19 1996-11-29 Sony Corp Optical part and manufacturing method thereof
JPH0997888A (en) * 1995-09-29 1997-04-08 Sony Corp Optical device and manufacture thereof
JP2002277323A (en) * 2001-03-15 2002-09-25 Fuji Xerox Co Ltd Ultraviolet ray photodetector, ultraviolet ray quantity measuring device and ultraviolet ray quantity measuring method
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