JP2002271113A - Laminated dielectric resonator and laminated dielectric filter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize reduction in the size of and high yield of a laminated dielectric filter and the like, by suppressing the manufacturing fluctuations. SOLUTION: A resonance electrode 18 has a first electrode 22 of, for example, a rectangular shape formed on a first plane in a dielectric substrate 14, and a second electrode 24 formed on a second plane in the substrate 14. In this case, the first electrode 22 is electrically connected to the second electrode 24 via a via hole 20. The distal end of the second electrode 24, that is, an open end 18a of the electrode 18, is extended out of an inner layer ground electrode 16 on the plane and disposed to a front end 14a of the substrate 14, and a distal end (open end part of the electrode 18) 25 of the second electrode 24 is formed wider than a part except this.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
Hz for a laminated dielectric resonator and a laminated dielectric filter constituting a resonance circuit in a microwave band, particularly,
The present invention relates to a laminated dielectric resonator and a laminated dielectric filter capable of suppressing manufacturing variations, realizing miniaturization of a laminated dielectric filter and the like and achieving high yield.

[0002]

2. Description of the Related Art Recently, with the diversification of wireless communication systems such as portable telephones, there has been an increasing demand for miniaturization and low loss of a laminated dielectric filter.

In order to reduce the size of the laminated dielectric filter, the size of the resonator (resonant electrode) must be reduced.

Therefore, a method of adding a capacitance to the open end of a resonance electrode has been generally performed. In particular, in a laminated dielectric filter, for example, as shown in FIG. And a plurality of inner layer ground electrodes (first and second inner layer ground electrodes 2).
04 and 206), and the first and second inner-layer ground electrodes 204 and 206 sandwich the open end 202a of the resonance electrode 202.

[0005]

By the way, in the manufacture of a laminated dielectric filter, for example, it is important to suppress the manufacturing variation in order to secure a high yield stably. However, the structure in which the resonance electrode 202 is sandwiched between the first and second inner-layer ground electrodes 204 and 206 has a problem that stacking variation and thickness variation of the dielectric layer are likely to occur.

For example, in the laminated dielectric filter shown in FIG. 7, the first inner layer earth electrode 204 and the resonance electrode 20
When the thickness T of the dielectric layer between the two layers increases, the value of the capacitance C1 between the first inner layer earth electrode 204 and the resonance electrode 202 decreases, and the value of the combined capacitance (C1 + C2) also decreases. The frequency becomes higher than the target frequency.

In the multilayer dielectric filter shown in FIG. 7, for example, when the lamination area (the area of the overlapping portion) between the first inner-layer ground electrode 204 and the resonance electrode 202 is reduced, the first and second layers are removed. The value of each of the capacitances C1 and C2 between the second inner-layer ground electrodes 204 and 206 and the resonance electrode 202 decreases, and the value of the combined capacitance (C1 + C2) also decreases. As a result, the center frequency becomes higher than the target frequency.

As described above, in the conventional structure, the variation in the resonance frequency becomes large due to the influence of the lamination variation and the thickness variation of the dielectric layer, and the yield of the laminated dielectric filter having desired characteristics cannot be increased. There's a problem.

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above problems, and has been made in consideration of the above-described problems. It is an object to provide a body resonator and a laminated dielectric filter.

[0010]

According to the present invention, there is provided a multilayer dielectric resonator and a multilayer dielectric filter according to the present invention, wherein a ground electrode is formed on a surface of a dielectric substrate formed by laminating a plurality of dielectric layers. And an inner-layer earth electrode and a resonance electrode formed in the dielectric substrate, wherein the resonance electrode has an open end formed to be wide, and the open end has a planar shape.
It is characterized in that it is located at a portion protruding from the inner layer ground electrode.

In general, when a lamination shift of a resonance electrode or the like occurs, the length of the resonator fluctuates. For example, when the open end of the resonance electrode is located near the short-circuit end due to stacking deviation of the resonance electrode or the like, the resonator length becomes short, and as a result,
The resonance frequency increases. In particular, when the open end of the resonance electrode is positioned so as to be included in the inner layer earth electrode on a plane,
Since the capacitance between the open end of the resonance electrode and the inner-layer ground electrode also decreases, the resonance frequency further increases.

However, in the present invention, when the open end of the resonance electrode is located near the short-circuit end due to lamination displacement of the resonance electrode or the like, the resonator length is shortened, but the resonance electrode faces the inner layer earth electrode. Wide portions are increased, and as a result, the capacitance between the open end of the resonance electrode and the inner-layer ground electrode is increased.

That is, when the open end of the resonance electrode is located near the short-circuit end, the length of the resonator becomes short.
Although the resonance frequency increases, in the present invention, since the capacitance between the open end of the resonance electrode and the inner-layer earth electrode increases, the fluctuation of the resonance frequency in the high frequency direction is canceled, and the characteristic fluctuation is suppressed. Become. This is the same even when the resonator length is long.

In the above structure, the inner layer ground electrode may be formed in a band shape. Thereby, even if there are a plurality of resonance electrodes, it becomes easy to position each open end of the resonance electrodes in a portion protruding from the inner-layer ground electrode on a plane.

Further, in the above configuration, the amount of protrusion of the open end of the resonance electrode from the inner-layer ground electrode may be larger than the amount of lamination displacement of the resonance electrode and the like. In this case, a change in the lamination displacement of the resonance electrode and the like is caused by the area of the inner layer ground electrode facing the wide portion at the tip end of the second electrode portion. Can be efficiently canceled, and the effect of suppressing the characteristic fluctuation can be enhanced.

The resonance electrode includes a first electrode portion formed on a first plane in the dielectric substrate, and a surface of the dielectric substrate in which the inner-layer ground electrode is formed. A second electrode portion formed on a second plane located between the ground electrode and a ground electrode; and a connection portion electrically connecting the first electrode portion and the second electrode portion. It may be.

As a result, a capacitance (for convenience, referred to as a first capacitance) is formed between the second electrode portion of the resonance electrode and the inner-layer ground electrode, and a capacitance (for convenience) is formed between the second electrode portion and the ground electrode. (Referred to as a second capacitor). Therefore, the combined capacitance formed between the resonance electrode and the ground electrode is the sum of the first and second capacitances.

At this time, when the thickness between the resonance electrode and the inner-layer ground electrode becomes larger than the target thickness due to the thickness variation, the value of the first capacitance becomes small, and the center frequency usually becomes high. However, according to the present invention, since the connection portion for electrically connecting the first electrode portion and the second electrode portion is provided, the length of the connection portion increases with the thickness between the resonance electrode and the inner-layer ground electrode. As a result, the length of the resonance electrode becomes longer, so that it works to suppress the fluctuation of the center frequency in the high frequency direction due to the decrease of the first capacitance.

Conversely, when the thickness between the resonance electrode and the inner-layer ground electrode becomes smaller than the target thickness, the value of the first capacitance becomes large, and the center frequency usually becomes low.
However, since the length of the connection portion decreases with the thickness between the resonance electrode and the inner-layer ground electrode, and as a result, the length of the resonance electrode decreases, the center frequency associated with the increase in the first capacitance is reduced. Works to suppress the fluctuation in the low frequency direction.

Further, in the above structure, the ground electrode has first and second ground electrodes formed on both surfaces of the dielectric substrate, and the resonance electrode is provided on a first surface of the dielectric substrate. A first electrode portion formed on a plane, and a second electrode portion formed on the dielectric substrate and on a second plane located between the surface on which the inner-layer ground electrode is formed and the first ground electrode; A second electrode portion, a third electrode portion formed on a third plane located between the surface on which the inner layer ground electrode is formed, and the second ground electrode, and the first electrode portion, A first connection unit for electrically connecting the electrode unit and the second electrode unit;
The semiconductor device may include a second connection unit that electrically connects the first electrode unit and the third electrode unit.

The connection portion may be a via hole, and the inner layer ground electrode may be formed on the first plane.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a laminated dielectric resonator and a laminated dielectric filter according to the present invention will be described with reference to FIG.
This will be described with reference to FIG.

First, the laminated dielectric resonator 10A according to the first embodiment is, for example, as shown in FIGS.
A plurality of dielectric layers (first to ninth dielectric layers S1 to S9) are laminated, fired and integrated, and the ground electrode (upper surface ground electrode 12a, side surface ground electrodes 12b and 12c, lower surface ground electrode 12d) is formed on the surface. ) Is formed on the dielectric substrate 14. FIG. 2 shows an example in which the dielectric substrate 14 is formed by sequentially stacking the first to ninth dielectric layers S1 to S9. First to first
The number of laminations of the ninth dielectric layers S1 to S9 is merely an example, and the first to ninth dielectric layers S1 to S9
Are each composed of one or more layers.

The laminated dielectric resonator 10A according to the first embodiment includes an inner-layer ground electrode 16 and a resonance electrode 18 formed in the dielectric substrate 14, and the resonance electrode 18 The open end 18a is connected to the surface on which the inner layer earth electrode 16 is formed and the upper surface side earth electrode 12a.
The first to ninth dielectric layers S1 to S9 (FIG. 2)
(See FIG. 2).

More specifically, the resonance electrode 18 is, for example, a rectangular first electrode formed on a first plane (one main surface of a fifth dielectric layer S5) in the dielectric substrate 14. Part 22
And a second plane in the dielectric substrate 14 (the third dielectric layer S
3 on one main surface). The connection section 20 is formed of a via hole that electrically connects the first electrode section 22 and the second electrode section 24.

Referring to FIG. 2, the laminated dielectric resonator 10A according to the first embodiment includes a first electrode of a resonance electrode 18 on one main surface of a fifth dielectric layer S5. The part 22 and the inner-layer ground electrode 16 are formed with a space therebetween. The inner-layer ground electrode 16 is formed in a band shape, and is formed near the tip of the first electrode portion 22 so as to extend in a direction orthogonal to the longitudinal direction of the first electrode portion 22.

When the resonance electrode 18 is a quarter-wavelength resonance electrode, one end of the resonance electrode 18 is short-circuited to the side-surface ground electrode 12b formed on one side of the dielectric substrate 14, as shown in FIG. The adopted structure is adopted. Of course, the inner-layer ground electrode 16 is also short-circuited to a side-surface ground electrode (not shown) formed on the other side of the dielectric substrate 14.

Further, in the first embodiment,
As shown in FIG. 2, the second electrode portion 24 is formed on one main surface of the third dielectric layer S3, and the first and second electrode portions 2 are formed.
2 and 24 are electrically connected through via holes 20 formed in the third and fourth dielectric layers S3 and S4.

Here, the inner layer earth electrode 16 and the resonance electrode 1
3 will be described with reference to FIG. 3. The tip 18a of the second electrode portion 24, that is, the resonance electrode 1
The open end 18 a of 8 protrudes from the inner-layer ground electrode 16 on a plane and is located near the front end 14 a of the dielectric substrate 14. Further, the tip portion (open end portion of the resonance electrode 18) 25 of the second electrode portion 24 is formed wider than other portions. Therefore, in the following description, the distal end portion 25 of the second electrode portion 24 is referred to as a wide portion 25.

Therefore, the tip 18a of the second electrode portion 24 is moved to the resonance electrode 1 due to, for example, displacement of the resonance electrode 18 or the like.
8 (toward the rear end 14b of the dielectric substrate 14), the facing area between the inner-layer ground electrode 16 and the wide portion 25 increases, and the tip 18a of the second electrode portion 24 becomes When it is shifted to the front end 14a side of the substrate 14, the facing area between the inner layer earth electrode 16 and the wide portion 25 becomes small.

In the multilayer dielectric resonator 10A according to the first embodiment, as shown in FIG.
The second electrode portion 24 of the resonance electrode 18 and the inner layer earth electrode 16
A capacitor C11 is formed between the second electrode portion 24 and the upper surface side ground electrode 12a. Therefore, the combined capacitance formed between the resonance electrode 18 and the ground electrodes 12a and 12d is the sum of these capacitances C11 and C12.

At this time, if the thickness t between the second electrode portion 24 and the inner-layer ground electrode 16 becomes larger than the target thickness due to the thickness variation, the value of the capacitance C11 becomes smaller, and usually, the value of the capacitance C11 becomes smaller. The frequency increases. But,
In the first embodiment, since the via hole 20 extends in the stacking direction of the dielectric layers, the via hole 20
Becomes longer with the thickness t between the second electrode portion 24 and the inner-layer earth electrode 16, and as a result, the length of the resonance electrode 18 becomes larger. Fluctuation in the high frequency direction can be suppressed.

On the contrary, when the thickness t between the second electrode portion 24 and the inner-layer ground electrode 16 becomes smaller than the target thickness, the value of the capacitor C11 becomes large, and the center frequency usually becomes low. . However, the length of the via hole 20 decreases with the thickness t between the second electrode portion 24 and the inner-layer ground electrode 16, and as a result, the length of the resonance electrode 18 decreases. The accompanying fluctuation of the center frequency in the low frequency direction can be suppressed.

On the other hand, the tip 18a of the second electrode portion 24 is moved to the resonance electrode 18
When it is shifted to the short-circuit end side (the rear end 14b side of the dielectric substrate 14), the resonator length is shortened, so that the resonance frequency is usually increased. In the dielectric resonator 10A, as described above, since the facing area between the inner layer earth electrode 16 and the wide portion 25 of the second electrode portion 24 increases, the capacitance C1
1 is increased, whereby the fluctuation of the resonance frequency in the high frequency direction is canceled, and the characteristic fluctuation is suppressed.

Conversely, when the tip 18a of the second electrode portion 24 is shifted toward the front end 14a of the dielectric substrate 14, the length of the resonator becomes longer, so that the resonance frequency usually becomes lower. Laminated dielectric resonator 1 according to one embodiment
0A, as described above, the inner layer ground electrode 16
Since the facing area of the wide part 25 and the wide part 25 is reduced, the capacitance C11 is reduced, whereby the fluctuation of the resonance frequency in the low frequency direction is canceled out, and the characteristic fluctuation is suppressed.

As described above, in the multilayer dielectric resonator 10A according to the first embodiment, manufacturing variations such as thickness variations and stacking deviations can be suppressed, and the size of the multilayer dielectric filter and the like can be reduced. In addition, a high yield can be realized.

In particular, as shown in FIG.
If the protruding amount d of the tip end 18a of the fourth electrode 4 from the inner-layer ground electrode 16 is made larger than the amount of lamination deviation, the inner-layer ground electrode 16 and the second electrode portion change with the lamination deviation of the resonance electrode 18 and the like. Since the area of the cavity 24 is opposed to the wide portion 25, the fluctuation of the resonance frequency due to the fluctuation of the resonator length can be canceled efficiently, and the effect of suppressing the characteristic fluctuation can be enhanced.

Next, a laminated dielectric resonator 10B according to a second embodiment will be described with reference to FIGS.

As shown in FIGS. 4 and 5, the laminated dielectric resonator 10B according to the second embodiment is substantially the same as the laminated dielectric resonator 10A according to the first embodiment. Although it has a configuration, the configuration of the resonance electrode 18 is partially different.

That is, the resonance electrode 18 is composed of the first electrode portion 22 formed on the first plane (one main surface of the fifth dielectric layer S5) in the dielectric substrate 14 and the dielectric substrate 14 The second electrode portion 24 formed on the second plane (one main surface of the third dielectric layer S3) inside the third substrate (the seventh dielectric layer S7). And a third electrode portion 26 formed on the first main surface). Each of the tip portions 25 and 27 of the second electrode portion 24 and the third electrode portion 26 is formed wide.

The connection portion is formed on the third dielectric layer S3 and the fourth dielectric layer S4, and the first electrode portion 2
A first via hole 20 for electrically connecting the second and second electrode portions 24, a fifth dielectric layer S5 and a sixth dielectric layer S
6 and a second via hole 28 for electrically connecting the first electrode portion 22 and the third electrode portion 26 to each other.

In the laminated dielectric resonator 10B according to the second embodiment, a capacitance C11 is formed between the second electrode portion 24 of the resonance electrode 18 and the inner-layer earth electrode 16.
A capacitance C12 is formed between the second electrode portion 24 and the upper surface side ground electrode 12a, and a capacitance C21 is formed between the third electrode portion 26 of the resonance electrode 18 and the inner layer ground electrode 16. The capacitance C22 is formed between the electrode part 26 and the lower surface side ground electrode 12d. Therefore, the combined capacitance formed between the resonance electrode 18 and the ground electrodes 12a and 12d is the sum of these capacitances (C11 + C12 + C21 + C22).

At this time, if the thickness t between the second electrode portion 24 and the inner-layer ground electrode 16 becomes larger than the target thickness due to thickness variation, for example, the value of the capacitance C11 becomes small. The frequency increases, but the first
As in the embodiment, the length of the first via hole 20 increases with the thickness t between the second electrode portion 24 and the inner-layer ground electrode 16, and as a result, the length of the resonance electrode 18 increases. Therefore, it is possible to suppress the fluctuation of the center frequency in the higher frequency direction due to the decrease in the capacitance C11.

On the other hand, when the thickness t between the second electrode portion 24 and the inner-layer ground electrode 16 is smaller than the target thickness, the value of the capacitance C11 increases, and the center frequency generally decreases. However, the length of the first via hole 20 is the second
Becomes smaller with the thickness t between the electrode portion 24 and the inner-layer ground electrode 16 and consequently the length of the resonance electrode 18 becomes smaller. Can be suppressed.

These operations are the same even when the thickness between the third electrode portion 26 and the inner-layer ground electrode 16 varies.

On the other hand, the second electrode portion 2
When the front end 18a of the fourth substrate 4 is located on the side of the rear end 14b of the dielectric substrate 14, the resonator length is short, so that the resonance frequency is normally high. Also in the body resonator 10B, the capacitance C11 between the open end 18a of the resonance electrode 18 and the inner-layer ground electrode 16 increases, so that the fluctuation in the resonance frequency in the high frequency direction is canceled out, and the characteristic fluctuation is suppressed. . This is the same even when the resonator length is long. Further, even if the tip 18b of the third electrode part 26 is displaced, the fluctuation of the resonance frequency is suppressed as described above.

As described above, also in the multilayer dielectric resonator 10B according to the second embodiment, manufacturing variations can be suppressed, and miniaturization and high yield of the multilayer dielectric filter can be realized. Can be.

In particular, in the laminated dielectric resonator 10B according to the second embodiment, since the third electrode portion 26 is provided, the capacitance can be increased, and the laminated dielectric filter and the like can be provided. There is an advantage in that the size can be reduced when applied to.

FIG. 6 shows an example in which a multilayer dielectric filter 100 having a two-stage structure is formed using the multilayer dielectric resonator 10B according to the second embodiment. The laminated dielectric filter 100 has a dielectric substrate 14 formed by laminating a plurality of dielectric layers (S1 to S9), and firing and integrating them. Two resonance electrodes 18
A and a plurality of first electrode units 2 constituting 18B respectively
2a and 22b and the first electrode portions 22a and 22
One band-shaped inner layer ground electrode 16 common to b is formed.

Further, on one principal surface of the third dielectric layer S3,
A plurality of second electrode portions 24a and 24b constituting the two resonance electrodes 18 are formed.

The first and second electrode portions 22a and 22
4a and 22b and 24b are a plurality of first via holes 2 formed in the third and fourth dielectric layers S3 and S4.
They are electrically connected through 0a and 20b, respectively. Each of the tip portions 25a and 25b of the second electrode portions 24a and 24b is formed wide.

Further, a plurality of third electrode portions 26a and 26b respectively forming two resonance electrodes 18 are formed on one main surface of the seventh dielectric layer S7, and furthermore, between the resonance electrodes 18A and 18B. Coupling adjustment electrode 50 for adjusting the degree of coupling
Are formed.

The first and third electrode portions 22a and 22a
6a and 22b and 26b are a plurality of second via holes 2 formed in the fifth and sixth dielectric layers S5 and S6.
8a and 28b are electrically connected respectively. The tip portions 27a and 27b of the third electrode portions 26a and 26b are also formed to be wide.

Further, on one main surface of the fourth dielectric layer S4,
An input electrode 52 for connecting one of the resonance electrodes 18A to, for example, an input terminal (not shown) via a capacitor is formed.
An output electrode 54 for connecting the other resonance electrode 18B to, for example, an output terminal (not shown) via a capacitor is formed.

Note that, in the example of FIG.
2d is formed on one main surface of the ninth dielectric layer S9.

The two-stage laminated dielectric filter 10
In the case of No. 0, since the configuration is made using the structure of the multilayer dielectric resonator 10B according to the above-described second embodiment, it is possible to suppress the manufacturing variation of the multilayer dielectric filter 100. Made, laminated dielectric filter 10
0 and a high yield can be realized.

In the above-described example, the multilayer dielectric resonator 10B according to the second embodiment is applied to the multilayer dielectric filter 100 having a two-stage structure. The present invention can also be applied to a type dielectric filter and a laminated dielectric filter (not shown) having four or more stages.

It should be noted that the laminated dielectric resonator and the laminated dielectric filter according to the present invention are not limited to the above-described embodiments, but may adopt various configurations without departing from the gist of the present invention. Of course.

[0059]

As described above, according to the multilayer dielectric resonator and the multilayer dielectric filter of the present invention, it is possible to suppress the manufacturing variation, to reduce the size of the multilayer dielectric filter and the like. High yield can be realized.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a laminated dielectric resonator according to a first embodiment.

FIG. 2 is an exploded perspective view showing the multilayer dielectric resonator according to the first embodiment.

FIG. 3 is a plan view showing an arrangement relationship between an inner-layer ground electrode and a resonance electrode in the multilayer dielectric resonator according to the first embodiment.

FIG. 4 is a longitudinal sectional view showing a laminated dielectric resonator according to a second embodiment.

FIG. 5 is an exploded perspective view showing a multilayer dielectric resonator according to a second embodiment.

FIG. 6 is an exploded perspective view showing a laminated dielectric filter having a two-stage structure.

FIG. 7 is a longitudinal sectional view showing a laminated dielectric filter according to a conventional example.

[Explanation of symbols]

10A, 10B: laminated dielectric resonator 12a: upper surface side ground electrode 12d: lower surface side ground electrode 14: dielectric substrate 16: inner layer ground electrode 18, 18A,
18B ... resonance electrode 18a ... one open end 18b ... the other open end 20, 20a, 20b ... connection part 22, 22a,
22b first electrode portion 24, 24a, 24b second electrode portion 25, 25a, 25b, 27 wide portion 26, 26a, 26b third electrode portion 28 second via hole 100 laminated type Dielectric filters S1 to S9 ... First to ninth dielectric layers

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01P 1/203 H01F 15/00 D 1/205 H01L 41/08 QU (72) Inventor Tatsuya Tsuruoka Aichi Nagoya City, 2-56 Suda-cho, Mizuho-ku, Nagoya Insulator Co., Ltd. No. 56, Suda-cho, Mizuho-ku, Nagoya-shi, Japan F-term (reference) in Japan Insulators Co., Ltd. 5E070 AA05 AB01 AB04 BA11 CB03 CB13 EA01 5J006 HA35 HB05 HB13 HB21 HB22 JA01 LA21 LA26 LA28 NA04 NB07 NC03 NF02

Claims (8)

[Claims] A ground electrode formed on a surface of a dielectric substrate formed by laminating a plurality of dielectric layers; an inner ground electrode and a resonance electrode formed in the dielectric substrate; The resonance electrode has an open end formed to be wide, and
The laminated dielectric resonator according to claim 1, wherein the open end is located at a portion protruding from the inner layer ground electrode on a plane. 2. The laminated dielectric resonator according to claim 1, wherein said inner-layer ground electrode is formed in a strip shape. 3. The multilayer dielectric resonator according to claim 1, wherein an amount of the open end of the resonance electrode protruding from the inner-layer ground electrode is larger than an amount of misalignment. Dielectric resonator. 4. The laminated dielectric resonator according to claim 1, wherein said resonance electrode is a first electrode formed on a first plane in said dielectric substrate. A second electrode portion formed on a second plane located in the dielectric substrate and between the formation surface of the inner-layer ground electrode and the ground electrode; A laminated dielectric resonator comprising: a connection portion that electrically connects an electrode portion and a second electrode portion. 5. The laminated dielectric resonator according to claim 1, wherein said ground electrode comprises first and second ground electrodes formed on both surfaces of said dielectric substrate. And wherein the resonance electrode is a first electrode portion formed on a first plane in the dielectric substrate, and in the dielectric substrate,
A second electrode portion formed on a second plane positioned between the surface on which the inner-layer ground electrode is formed and the first ground electrode; a surface on which the inner-layer ground electrode is formed; and the second ground A third electrode formed on a third plane located between the first electrode and the third electrode;
And a first connection portion for electrically connecting the first electrode portion and the second electrode portion, and electrically connecting the first electrode portion and the third electrode portion. And a second connecting portion for connection. 6. The multilayer dielectric resonator according to claim 4, wherein said connection portion is a via hole. 7. The multilayer dielectric resonator according to claim 4, wherein said inner-layer ground electrode is formed on said first plane. Body resonator. 8. A laminate comprising: a ground electrode formed on a surface of a dielectric substrate formed by laminating a plurality of dielectric layers; and an inner ground electrode and a resonance electrode formed in the dielectric substrate. In the type dielectric filter, an open end of the resonance electrode is formed to be wide, and
The laminated dielectric filter according to claim 1, wherein the open end is located at a portion protruding from the inner layer ground electrode on a plane.