JP2002270686A5 - - Google Patents
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- Publication number
- JP2002270686A5 JP2002270686A5 JP2001056759A JP2001056759A JP2002270686A5 JP 2002270686 A5 JP2002270686 A5 JP 2002270686A5 JP 2001056759 A JP2001056759 A JP 2001056759A JP 2001056759 A JP2001056759 A JP 2001056759A JP 2002270686 A5 JP2002270686 A5 JP 2002270686A5
- Authority
- JP
- Japan
- Prior art keywords
- interconnect
- layer
- passivation layer
- silicon substrate
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 description 114
- 239000000758 substrate Substances 0.000 description 111
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 81
- 229910052710 silicon Inorganic materials 0.000 description 81
- 239000010703 silicon Substances 0.000 description 81
- 239000002184 metal Substances 0.000 description 80
- 229910052751 metal Inorganic materials 0.000 description 80
- 238000000034 method Methods 0.000 description 75
- 229920000642 polymer Polymers 0.000 description 30
- 229920001721 polyimide Polymers 0.000 description 24
- 239000004642 Polyimide Substances 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 18
- 238000005530 etching Methods 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 230000000638 stimulation Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001056759A JP5429764B2 (ja) | 2001-03-01 | 2001-03-01 | チップ及びチップの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001056759A JP5429764B2 (ja) | 2001-03-01 | 2001-03-01 | チップ及びチップの製造方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012084641A Division JP2012129570A (ja) | 2012-04-03 | 2012-04-03 | チップの製造方法 |
| JP2012223435A Division JP5701835B2 (ja) | 2012-10-05 | 2012-10-05 | 相互接続構造体を有するチップ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002270686A JP2002270686A (ja) | 2002-09-20 |
| JP2002270686A5 true JP2002270686A5 (enExample) | 2008-11-13 |
| JP5429764B2 JP5429764B2 (ja) | 2014-02-26 |
Family
ID=18916734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001056759A Expired - Fee Related JP5429764B2 (ja) | 2001-03-01 | 2001-03-01 | チップ及びチップの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5429764B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6965165B2 (en) | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831820A (ja) * | 1994-07-19 | 1996-02-02 | Sony Corp | 半導体装置 |
| JP4995364B2 (ja) * | 1999-03-25 | 2012-08-08 | セイコーインスツル株式会社 | 半導体集積回路装置 |
-
2001
- 2001-03-01 JP JP2001056759A patent/JP5429764B2/ja not_active Expired - Fee Related
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