JP2002261236A - Electronic component device - Google Patents

Electronic component device

Info

Publication number
JP2002261236A
JP2002261236A JP2001055333A JP2001055333A JP2002261236A JP 2002261236 A JP2002261236 A JP 2002261236A JP 2001055333 A JP2001055333 A JP 2001055333A JP 2001055333 A JP2001055333 A JP 2001055333A JP 2002261236 A JP2002261236 A JP 2002261236A
Authority
JP
Japan
Prior art keywords
electronic component
substrate
component device
resin
sealing lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001055333A
Other languages
Japanese (ja)
Inventor
Mitsutaka Touden
光隆 嶌田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001055333A priority Critical patent/JP2002261236A/en
Publication of JP2002261236A publication Critical patent/JP2002261236A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component device having a lid which is not peeled off from a substrate, when thermal stress such as solder reflow is applied, and both the electronic component device and a mother board can be mounted stably, after the electronic component device has been mounted on the mother board. SOLUTION: In this electronic component device, a substrate 1 has a part 4 where one surface is opened and the section is recessed, an electronic component element 3 is accommodated in the recessed part 4, and the aperture of the recessed part 4 is sealed with a lid member 7 for sealing, which is constituted of the laminated structure of a metal layer 7a on the exposed surface side and a resin layer 7b of a substrate jointing surface side.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は電子部品素子、例え
ば、SAW素子などの圧電素子を基板に形成した凹部
(キャビティ)に収容し、気密封止した電子部品装置に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component device in which an electronic component element, for example, a piezoelectric element such as a SAW element is housed in a recess (cavity) formed in a substrate and hermetically sealed.

【0002】[0002]

【従来の技術】電子部品装置は、近年、小型化、薄型
化、高機能化の要求が高まっており、これらの要求に対
応するために、セラミックなどの基板の一方主面に複数
の電子部品素子を搭載し、また、基板の他方主面に凹部
を形成し、この凹部内に電子部品素子を収容していた。
基板の一方主面に搭載する電子部品素子とは、コンデン
サ、抵抗、ダイオード、コイル、ICやトランジスタ等
の半導体素子などの表面実装型電子部品素子などが例示
できる。また、凹部内に収容する電子部品素子は、圧電
素子などが例示でき、SAW素子、セラミック振動子、
水晶振動子などで、対環境保護のための気密封止を必要
とする素子のことである。
2. Description of the Related Art In recent years, demands for smaller, thinner, and more sophisticated electronic component devices have been increasing. In order to meet these demands, a plurality of electronic components are mounted on one main surface of a substrate such as ceramic. The device is mounted, and a recess is formed in the other main surface of the substrate, and the electronic component device is accommodated in the recess.
Examples of the electronic component element mounted on one main surface of the substrate include a capacitor, a resistor, a diode, a coil, and a surface-mounted electronic component element such as a semiconductor element such as an IC or a transistor. Examples of the electronic component element housed in the recess include a piezoelectric element and the like, and include a SAW element, a ceramic vibrator,
A device such as a crystal unit that requires hermetic sealing for environmental protection.

【0003】このような電子部品装置は、基板の他方主
面に凹部を形成し、この凹部内に電子部品素子を収容し
ていた。そして、電子部品装置の凹部に収納される電子
部品素子は、その周囲に空間を必要とする圧電素子が配
置された、凹部の開口を金属やセラミックなどの蓋体を
接着して封止をしていた。
In such an electronic component device, a concave portion is formed in the other main surface of the substrate, and the electronic component element is accommodated in the concave portion. The electronic component element housed in the concave portion of the electronic component device is sealed by bonding a lid made of metal or ceramic to the opening of the concave portion in which a piezoelectric element requiring a space is arranged around the electronic component element. I was

【0004】代表的な封止方法は,はんだやAu−Sn
合金を使ったソルダーシール法や開口周囲にシールリン
グをろう付け配置し、このシールリングに金属蓋体をシ
ーム溶接でシールするシームウエルド法、さらに、接合
部材として低融点ガラスを用いて、基板と蓋体を接着す
るガラス封止方法が知られている。
[0004] A typical sealing method is solder or Au-Sn.
A solder seal method using an alloy, a seal ring brazed around the opening, and a seam weld method in which a metal lid is sealed to the seal ring by seam welding. A glass sealing method for bonding a lid is known.

【0005】これらの封止方法は、気密性が高く、信頼
性に優れているが生産性に劣り高価になる欠点がある。
また、封止の際に与える熱を考えると、シームウエルド
法では凹部内の温度が150℃程度程度であり、ソルタ
ーシール法では320〜340℃となり、更にガラスシ
ール法では380〜420℃になる。このような封止時
の高い温度では、凹部内に収容する電子部品素子の特性
が大きく変化してしまうことが考えられ、特に、水晶振
動子や弾性表面波素子等の熱に弱い素子では素子の特性
が劣化するため採用することができない。
[0005] These sealing methods are high in airtightness and excellent in reliability, but have the disadvantage that they are inferior in productivity and expensive.
Considering the heat applied during sealing, the temperature in the concave portion is about 150 ° C. in the seam weld method, 320 to 340 ° C. in the salter seal method, and 380 to 420 ° C. in the glass seal method. . At such a high temperature at the time of sealing, it is conceivable that the characteristics of the electronic component element housed in the concave portion are greatly changed. Particularly, in the case of an element which is weak to heat, such as a quartz oscillator or a surface acoustic wave element, Cannot be adopted because of the deterioration of the characteristics.

【0006】これらの問題を解決するために、従来よ
り、接合材として樹脂系接着剤を使用して基板と蓋体を
接着する方法が提案されている(例えば特開平4−85
857号や特開平7−212169号)。これらの封止
構造では、図3に示すように部蓋体材として金属箔体が
用いられ、エポキシ樹脂などの樹脂系接着剤で封止する
例である。図3において、1は基板、2は基板の一方主
面側に搭載した電子部品素子、4は凹部、3は凹部4内
に収容した電子部品素子、70は金属箔からなる蓋体で
あり、8は樹脂系接着剤、9は外部端子電極、10はマ
ザーボード、11は外部端子電極用配線パターン、12
は配線パターン、13は半田である。
In order to solve these problems, a method of bonding a substrate and a lid using a resin-based adhesive as a bonding material has been proposed (for example, Japanese Patent Laid-Open No. 4-85).
857 and JP-A-7-212169). In these sealing structures, as shown in FIG. 3, a metal foil body is used as a cover material, and sealing is performed with a resin-based adhesive such as an epoxy resin. In FIG. 3, 1 is a substrate, 2 is an electronic component element mounted on one main surface side of the substrate, 4 is a concave portion, 3 is an electronic component element housed in the concave portion 4, 70 is a cover made of metal foil, 8 is a resin adhesive, 9 is an external terminal electrode, 10 is a motherboard, 11 is a wiring pattern for an external terminal electrode, 12
Is a wiring pattern, and 13 is solder.

【0007】[0007]

【発明が解決しようとする課題】このような電子部品装
置の第1の問題点は、近年小型化、低背化の要求に対
し、電子部品素子の低背化の為に蓋体を薄くする必要が
ある。例えば図3に示すように、凹部4内で電子部品素
子3をボンディングワイヤで接続するようと時に、金属
蓋体とボンディングワイヤとの間でショートすることが
あり、電子部品装置の小型化が達成しにくい。また、凹
部内に収容する電子部品素子に接続方法に大きな制約が
発生してしまう。
The first problem of such an electronic component device is that, in recent years, in response to demands for miniaturization and reduction in height, the lid is made thinner in order to reduce the height of electronic component elements. There is a need. For example, as shown in FIG. 3, when connecting the electronic component element 3 with the bonding wire in the concave portion 4, a short circuit may occur between the metal cover and the bonding wire, and the miniaturization of the electronic component device is achieved. Hard to do. In addition, a large restriction is imposed on the connection method for the electronic component element housed in the recess.

【0008】また、基板1と金属蓋体70との接合が、
樹脂系接着剤8を介して達成されている。即ち、樹脂系
接着剤8は、基板1、金属と全く熱膨張係数が相違する
部材を接合しているため、電子部品装置をマザーボード
10等に半田リフローなどの熱ストレスが加わったとき
にも蓋が基板から剥離する場合がある。
The bonding between the substrate 1 and the metal lid 70 is
This is achieved via the resin-based adhesive 8. That is, since the resin-based adhesive 8 joins the substrate 1 and a member having a completely different thermal expansion coefficient from the metal, the electronic component device can be used even when thermal stress such as solder reflow is applied to the motherboard 10 or the like. May peel off from the substrate.

【0009】さらに、電子部品装置の基板の他方面から
金属蓋体70が突出するような場合には、電子部品装置
をマザーボード10に表面実装できなくなる。
Further, when the metal cover 70 protrudes from the other surface of the substrate of the electronic component device, the electronic component device cannot be surface-mounted on the motherboard 10.

【0010】本発明は、上述の問題点に鑑みて案出され
たものであり、その目的は、半田リフローなどの熱スト
レスが加わったときにも蓋が基板から剥離することがな
く、電子部品装置がマザーボードへ実装された後で、電
子部品装置とマザーボードと安定して実装できる電子部
品装置を提供するものである。
The present invention has been devised in view of the above-mentioned problems, and has as its object to prevent the lid from peeling off from the substrate even when a thermal stress such as solder reflow is applied, so that the electronic component can be prevented. An object of the present invention is to provide an electronic component device and an electronic component device that can be stably mounted on the motherboard after the device is mounted on the motherboard.

【0011】[0011]

【課題を解決するための手段】本発明は、一面が開口し
た断面凹部を有する基板に、電子部品素子を前記凹部に
収納するとともに該凹部の開口を封止用蓋体で封止した
電子部品装置において、前記封止用蓋体が、露出面側の
金属層と、基板接合面側の樹脂層との積層構造からなる
ことを特徴とする電子部品装置である。
According to the present invention, there is provided an electronic component in which an electronic component element is housed in a concave portion on a substrate having a concave portion having an open cross section, and the opening of the concave portion is sealed with a sealing lid. The electronic component device is characterized in that the sealing lid has a laminated structure of a metal layer on the exposed surface side and a resin layer on the substrate bonding surface side.

【0012】また、前記封止用蓋体と基板の凹部開口の
周囲とは、樹脂系接着剤を介して接合している。また
は、封止用蓋体と基板との接合は、封止用蓋体の基板接
合面側の樹脂層で行なわれている。
Also, the sealing lid and the periphery of the opening of the concave portion of the substrate are joined via a resin adhesive. Alternatively, the bonding between the sealing lid and the substrate is performed by a resin layer on the substrate bonding surface side of the sealing lid.

【0013】さらに、前記凹部開口の周囲には、少なく
とも前記封止用蓋体の厚み以上の窪みが周設されている
とともに、前記窪み部の周囲の基板表面に外部端子電極
が配置されている。
[0013] Further, a dent at least equal to the thickness of the sealing lid is provided around the opening of the recess, and external terminal electrodes are arranged on the substrate surface around the dent. .

【0014】さらに、前記基板の他方主面上に電子部品
素子が表面実装により配置されている。
Further, electronic component elements are arranged on the other main surface of the substrate by surface mounting.

【作用】本発明によれば、封止用蓋体は、樹脂層と金属
層の積層構造であり、露出面側に金属層が配置されてお
り、内面側に樹脂層が配置されている。この封止用蓋体
の樹脂層と電子部品装置の基板が樹脂系接着剤を介して
接着されるか、もしくは、蓋体として内面側に被覆した
樹脂層を接着層として用いて基板に直接接着される。こ
れにより、封止用蓋体と電子部品装置の基板との接着力
が高くなり、半田リフローなどの熱ストレスが加わった
場合でも封止用蓋体が基板から剥離するということがな
くなる。
According to the present invention, the sealing lid has a laminated structure of a resin layer and a metal layer. The metal layer is disposed on the exposed surface side, and the resin layer is disposed on the inner surface side. The resin layer of the sealing lid and the substrate of the electronic component device are bonded via a resin-based adhesive, or are directly bonded to the substrate using a resin layer coated on the inner surface side as a lid as an adhesive layer. Is done. Thereby, the adhesive force between the sealing lid and the substrate of the electronic component device is increased, and the sealing lid does not peel off from the substrate even when thermal stress such as solder reflow is applied.

【0015】また、電子部品素子と基板との電気的な接
合方法が、例えばボンディングワイヤであっても、この
封止用蓋体の内面側が絶縁材料であることから、ボンデ
ィングワイヤのショートが発生しない。
Further, even if the electronic component element is electrically bonded to the substrate by, for example, a bonding wire, a short circuit of the bonding wire does not occur because the inner surface of the sealing lid is made of an insulating material. .

【0016】封止用蓋体が、電子部品装置の基板面から
突出することがないため、電子部品装置とマザーボード
との隙間が、実質的に基板とマザーボード間の隙間と同
等になり、半田リフローでの実装性が良く、洗浄時に電
子部品装置とマザーボード間に洗浄液が回り込み易くな
り、洗浄性が向上する。
Since the sealing lid does not protrude from the substrate surface of the electronic component device, the gap between the electronic component device and the motherboard is substantially equal to the gap between the substrate and the motherboard, and the solder reflow. The cleaning liquid easily flows between the electronic component device and the motherboard during cleaning, and the cleaning performance is improved.

【0017】[0017]

【発明の実施の形態】以下に、本発明の電子部品装置に
ついて図面を基づいて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an electronic component device according to the present invention will be described with reference to the drawings.

【0018】図1は、本発明の電子部品素子層装置の断
面図であり、図2は、本発明の電子部品装置の底面側の
平面図である。尚、従来と同一箇所は同一番号付して説
明する。
FIG. 1 is a cross-sectional view of an electronic component element layer device of the present invention, and FIG. 2 is a plan view of a bottom surface side of the electronic component device of the present invention. The same parts as those in the related art will be described with the same reference numerals.

【0019】図において、1は基板であり、2は基板の
一方主面に配置した電子部品素子であり、4は凹部であ
り、3は凹部4内に収容された電子部品素子であり、7
は凹部4の開口を封止する封止用蓋体であり、8は樹脂
接着材であり、9は外部端子電極である。
In the figure, 1 is a substrate, 2 is an electronic component element arranged on one main surface of the substrate, 4 is a concave portion, 3 is an electronic component element housed in the concave portion 4, 7
Is a sealing lid for sealing the opening of the concave portion 4, 8 is a resin adhesive, and 9 is an external terminal electrode.

【0020】基板1は、セラミック、ガラスセラミック
材料、ガラスエポキシなどの樹脂系材料が挙げられる。
基板1の一方主面には所定配線導体が形成されており、
その配線導体上に電子部品素子2が搭載されている。
尚、この電子部品素子2は、コンデンサ、抵抗、ダイオ
ード、コイル、ICやトランジスタ等の半導体素子など
の表面実装型電子部品素子などが例示できる。
The substrate 1 is made of a resin material such as ceramic, glass ceramic material, or glass epoxy.
A predetermined wiring conductor is formed on one main surface of the substrate 1,
The electronic component element 2 is mounted on the wiring conductor.
The electronic component element 2 can be exemplified by a capacitor, a resistor, a diode, a coil, a surface-mounted electronic component element such as a semiconductor element such as an IC or a transistor, and the like.

【0021】また、基板1の他方主面に、所定深さで、
所定平面形状を有する凹部4が形成されている。そし
て、この凹部4の底面には、図示されていないが、電極
パッドが形成されている。そして、この凹部4内には、
電子部品素子3が収容されている。この電子部品素子3
は、上述の電子部品素子2のようにコンデンサ、抵抗、
ダイオード、コイル、ICやトランジスタ等の半導体素
子などを配置してもよいが、とりわけ、SAW素子、セ
ラミック振動子、水晶振動子などの圧電部品が有利であ
る。このように、凹部4に収容し、封止用蓋体7で封止
する構造から、電子部品素子を気密的に封止できるこ
と、機能的に電子部品素子2の周囲に空間が形成され
て、例えば圧電部品の特性に大きく影響する振動や弾性
波を安定して発生させることができるためである。
Further, on the other main surface of the substrate 1 at a predetermined depth,
A recess 4 having a predetermined planar shape is formed. An electrode pad (not shown) is formed on the bottom surface of the recess 4. And, in this recess 4,
The electronic component element 3 is housed. This electronic component element 3
Are capacitors, resistors, and the like as in the electronic component element 2 described above.
A diode, a coil, a semiconductor element such as an IC or a transistor, or the like may be provided, but a piezoelectric component such as a SAW element, a ceramic resonator, or a crystal resonator is particularly advantageous. As described above, since the electronic component element can be hermetically sealed from the structure in which the electronic component element is housed in the recess 4 and sealed with the sealing lid 7, a space is functionally formed around the electronic component element 2. This is because, for example, it is possible to stably generate vibrations and elastic waves that greatly affect the characteristics of the piezoelectric component.

【0022】このような基板1の配線導体や電極パッ
ド、さらには外部端子電極9は、従来周知の方法で形成
される。例えば、基板1がセラミックやガラスセラミッ
クである場合、多層回路基板の形成と同様、各導体膜を
基板材料の焼成時に、同時焼成して形成する。また、焼
成した後の基板1に導体膜の焼き付けにより形成され
る。また、基板1がガラスエポキシ材料である場合で
も、従来のように銅箔のエッチングなどにより所定形状
に形成される。
The wiring conductors and electrode pads of the substrate 1 and the external terminal electrodes 9 are formed by a conventionally known method. For example, when the substrate 1 is a ceramic or a glass ceramic, each conductor film is formed by simultaneous firing when the substrate material is fired, as in the formation of the multilayer circuit board. Also, the conductive film is formed on the fired substrate 1 by baking. Further, even when the substrate 1 is made of a glass epoxy material, the substrate 1 is formed in a predetermined shape by etching a copper foil or the like as in the related art.

【0023】このような基板1の凹部4の開口周囲に
は、基板1の他方主面から一段窪んだ窪み部5が周設さ
れている。この窪み部5の全体の形状、深さは、蓋体7
の形状、厚みに応じて設計され、この窪み部5内に、樹
脂系接着材8を介して蓋体7を配置しても、基板1の他
方主面から蓋体が突出しないような寸法となっている。
尚、窪み部5の深さは、例えば100μm程度となって
いる。
Around the opening of the concave portion 4 of the substrate 1, a concave portion 5 which is one step lower than the other main surface of the substrate 1 is provided. The overall shape and depth of the depression 5 are
Are designed in accordance with the shape and thickness of the substrate 1 so that the lid 7 does not project from the other main surface of the substrate 1 even when the lid 7 is disposed in the recess 5 via the resin-based adhesive 8. Has become.
The depth of the recess 5 is, for example, about 100 μm.

【0024】また、基板1の凹部4に配置される電子部
品素子3と凹部4の電極パッドとの接続は、バンプを介
して接続されている。また、バンプによる接続以外にボ
ンディングワイヤを用いることもできる。
The connection between the electronic component element 3 arranged in the concave portion 4 of the substrate 1 and the electrode pad of the concave portion 4 is connected via a bump. In addition, a bonding wire can be used instead of the connection using the bump.

【0025】例えば、凹部4に収容する電子部品素子3
は、例えば、圧電基板上にインターデジタル電極を形成
した弾性表面波素子が例示できる。この場合、インター
デジタル電極を形成した面に、引き出し電極を形成し
て、その電極上に金などからなるバンプを形成してお
く。そして、このインターデジタル電極を形成した圧電
基板の表面側が凹部4の底面と対向するように配置し、
超音波振動を用いてバンプ接続を行なう。
For example, the electronic component element 3 housed in the recess 4
For example, a surface acoustic wave element in which an interdigital electrode is formed on a piezoelectric substrate can be exemplified. In this case, an extraction electrode is formed on the surface on which the interdigital electrode is formed, and a bump made of gold or the like is formed on the extraction electrode. Then, the piezoelectric substrate on which the interdigital electrodes are formed is arranged so that the front side faces the bottom surface of the concave portion 4,
Bump connection is performed using ultrasonic vibration.

【0026】また、この凹部4の開口を封止する封止用
蓋体7は、平板状の金属層7aと、この金属層7aの基
板側の内面を被覆した樹脂層7bとから構成されてい
る。金属層7aは、例えば鉄、ニッケル、銅、金、銀、
アルミニウム、錫、ステンレス、鉛、及びこれらの合金
等が挙げられる。これらのなかでも、薄型に加工でき、
本体の基板と熱膨張係数が近く熱ストレスが発生しにく
い材料が好ましい。金属層の厚さは、湿気の浸入を遮断
できる厚みであればよく、2μmから300μmの範囲
が好ましい。具体的には、ステンレス(SUS430)
で30μm程度である。また、樹脂層7bは、材質に特
に制限は無いが、耐熱性、絶縁性、接着性に優れたもの
が、好ましく、例えばポリミド(PI)、ポリフェニレ
ンサルファイド(PPS)、ポリエチレンテレフタレー
ト(PET)、ポリエーテルイミド、ポリスルホン、ポ
リエーテルスルホン、ポリヒドロキシフェニレンエーテ
ル(PPO)、ポリエーテルケトン(PEEK)、ポリ
ケトンスルファイド(PKS)、フッ素樹脂、エポキシ
系樹脂、シリコーン系樹脂、フエノール系樹脂、マレイ
ミド系樹脂、ウレタン系樹脂、ジアリルフレタート樹脂
などが挙げられる。各樹脂層の厚さは、金属層7aに対
する絶縁性を考慮して、適宜選定することができ、2〜
300μmの範囲が好ましい。具体的には、ポリミド樹
脂が用いられ、その厚みは、12.5μmである。この
ような積層構造の封止用蓋体7は、金属層7aと樹脂層
7bとはキャスト法で直接接合されて形成される。ま
た、金属層7aが数μmの場合、例えば、樹脂層7bを
ベースに、その表面に金属層をメッキや蒸着などにより
被覆するようにしてもよい。
The sealing lid 7 for sealing the opening of the concave portion 4 is composed of a flat metal layer 7a and a resin layer 7b covering the inner surface of the metal layer 7a on the substrate side. I have. The metal layer 7a is made of, for example, iron, nickel, copper, gold, silver,
Examples include aluminum, tin, stainless steel, lead, and alloys thereof. Among these, it can be processed to be thin,
A material having a thermal expansion coefficient close to that of the substrate of the main body and less likely to generate thermal stress is preferable. The thickness of the metal layer may be any thickness as long as it can block moisture intrusion, and is preferably in the range of 2 μm to 300 μm. Specifically, stainless steel (SUS430)
Is about 30 μm. The material of the resin layer 7b is not particularly limited, but preferably has excellent heat resistance, insulation properties and adhesiveness. For example, polyimide (PI), polyphenylene sulfide (PPS), polyethylene terephthalate (PET), Ether imide, polysulfone, polyether sulfone, polyhydroxyphenylene ether (PPO), polyether ketone (PEEK), polyketone sulfide (PKS), fluororesin, epoxy resin, silicone resin, phenol resin, maleimide resin, Examples thereof include urethane resins and diallyl fretate resins. The thickness of each resin layer can be appropriately selected in consideration of the insulating property to the metal layer 7a.
A range of 300 μm is preferred. Specifically, a polyimide resin is used, and its thickness is 12.5 μm. The sealing lid 7 having such a laminated structure is formed by directly joining the metal layer 7a and the resin layer 7b by a casting method. When the metal layer 7a has a thickness of several μm, for example, the surface of the resin layer 7b may be covered with a metal layer by plating or vapor deposition.

【0027】接着剤8は、例えば、エポキシ系接着剤な
どが例示でき、封止用蓋体7と基板1の凹部4の周囲の
窪み部5の底面とを接合するものである。接着剤8によ
る接着層の厚みは10μm〜60μmである。具体的に
は、封止用蓋体7の内面側に接着剤を印刷し、Bステー
ジ化しておくことが望ましい。このような接着剤8の封
止条件は、所定圧力を加えながら、温度150℃で2h
rの圧着する。これにより、Bステージ状態の接着剤8
が溶融し、基板1と封止用蓋体7との強固な接合が得ら
れる。また、接着剤8は、蓋体7の内面側の樹脂層7c
(樹脂をBステージ化しておく)を接着剤としても構わな
い。この場合、封止用蓋体7の内面側の周囲に位置する
樹脂層(窪み部5の底面と接合する部位)は接着部材と
して機能し、その他の樹脂層7bは、金属層7aの内面
を絶縁被覆機能を有している。このような接着剤8の封
止条件は、所定圧力を加えながら、温度150℃で2h
rの圧着する。これにより、接着層8を省略(封止用蓋
体7の樹脂層7bを省略)することができ、封止用蓋体
7自身の厚みを薄くすることができ、電子部品装置の低
背化に寄与できる。
The adhesive 8 is, for example, an epoxy-based adhesive, and bonds the sealing lid 7 to the bottom surface of the recess 5 around the recess 4 of the substrate 1. The thickness of the adhesive layer made of the adhesive 8 is 10 μm to 60 μm. Specifically, it is desirable to print an adhesive on the inner surface side of the sealing lid 7 and to make it into a B stage. The sealing condition of the adhesive 8 is such that a predetermined pressure is applied and the temperature is 150 ° C. for 2 hours.
r is crimped. Thus, the adhesive 8 in the B-stage state
Is melted, and a strong bond between the substrate 1 and the sealing lid 7 is obtained. The adhesive 8 is applied to the resin layer 7 c on the inner surface side of the lid 7.
(Resin is B-staged) may be used as the adhesive. In this case, a resin layer (a portion that is bonded to the bottom surface of the recessed portion 5) located around the inner surface side of the sealing lid 7 functions as an adhesive member, and the other resin layer 7b serves as an inner surface of the metal layer 7a. It has an insulating coating function. The sealing condition of the adhesive 8 is such that a predetermined pressure is applied and the temperature is 150 ° C. for 2 hours.
r is crimped. Thus, the adhesive layer 8 can be omitted (the resin layer 7b of the sealing lid 7 can be omitted), the thickness of the sealing lid 7 itself can be reduced, and the height of the electronic component device can be reduced. Can contribute to

【0028】尚、樹脂系接着剤8の材料としては、特に
制限はなく、エポキシ系樹脂、フェノール系樹脂、ポリ
ミド系樹脂、シリコーン系樹脂、ポリエステル系樹脂な
どが挙げられ、このなかでも耐熱性や耐湿性に優れたエ
ポキシ系樹脂が好ましい。
The material of the resin adhesive 8 is not particularly limited, and examples thereof include an epoxy resin, a phenol resin, a polyimide resin, a silicone resin, and a polyester resin. Epoxy resins having excellent moisture resistance are preferred.

【0029】また、基板1の他方主面において、凹部4
開口(窪み部5)の周囲には、外部端子電極9が形成さ
れている。この外部端子電極9は、基板1の他方主面に
導電性ペーストの印刷、焼き付けにより形成する。ま
た、上述の配線導体の形成時、同時に外部端子電極を形
成しても構わない。尚、各外部端子電極は、図示してい
ないが、ビアホール導体や内部導体を介して、表面に搭
載された各種電子部品素子2、凹部4内に収容された電
子部品素子3と電気的に接続されている。そして、この
外部端子電極9は、マザーボード10上に電子部品装置
を搭載する際に、マザーボード10上の配線パターン1
1と半田13接合され外部回路との接続される。
In the other main surface of the substrate 1,
An external terminal electrode 9 is formed around the opening (recess 5). The external terminal electrodes 9 are formed on the other main surface of the substrate 1 by printing and baking a conductive paste. Further, the external terminal electrodes may be formed at the same time when the above-mentioned wiring conductor is formed. Although not shown, each external terminal electrode is electrically connected to various electronic component elements 2 mounted on the surface and electronic component elements 3 accommodated in the recess 4 via via-hole conductors and internal conductors. Have been. When the electronic component device is mounted on the motherboard 10, the external terminal electrodes 9 are connected to the wiring pattern 1 on the motherboard 10.
1 and solder 13 are connected to an external circuit.

【0030】本発明の電子部品装置によれは、封止用蓋
体7が、平板状金属層7aの内面側に樹脂層7bを被覆
した積層部材を使用している。そして、封止用蓋体7と
基板1とが樹脂系接着剤8で接着・封止されている。こ
のため、樹脂系接着剤8が蓋体側では樹脂層7bと接合
することができ、樹脂と樹脂との接合となり、なじみ性
がよく、封止用蓋体7と樹脂系接着剤8との界面での剥
離が発生しにくくなる。そして、例えば、マザーボード
10に半田リフロー処理を行なったとしても、安定した
接合が維持できる。また、そして、例えば、マザーボー
ドに半田リフロー処理を行なったとしても、安定した接
合が維持できる。
According to the electronic component device of the present invention, the sealing member 7 uses a laminated member in which the resin layer 7b is coated on the inner surface side of the flat metal layer 7a. The sealing lid 7 and the substrate 1 are bonded and sealed with a resin adhesive 8. Therefore, the resin-based adhesive 8 can be joined to the resin layer 7b on the lid side, so that the resin-to-resin is joined, the conformability is good, and the interface between the sealing lid 7 and the resin-based adhesive 8 is good. Separation hardly occurs. Then, for example, even if the motherboard 10 is subjected to a solder reflow process, stable bonding can be maintained. Also, even if, for example, a solder reflow process is performed on the motherboard, stable bonding can be maintained.

【0031】また、凹部4内に収容される電子部品素子
3が、ボンディングワイヤによって接続されても、封止
用蓋体7の内面が樹脂層7cで被覆されているため、ボ
ンディングワイヤと蓋体とのショートを防止することが
できる。
Further, even if the electronic component elements 3 housed in the recesses 4 are connected by bonding wires, the inner surface of the sealing lid 7 is covered with the resin layer 7c. Can be prevented from being short-circuited.

【0032】また、基板1の一方主面に電子部品素子2
が配置され、他方主面側に電子部品素子3が配置されて
いるため、電子部品装置が小型化され、実装面積を小さ
くすることができる。尚、電子部品素子3は、シールド
ケース6によって被覆されており、安定した電子部品装
置の動作が維持できる。
An electronic component element 2 is provided on one main surface of the substrate 1.
And the electronic component element 3 is disposed on the other main surface side, so that the electronic component device can be downsized and the mounting area can be reduced. In addition, the electronic component element 3 is covered with the shield case 6, and stable operation of the electronic component device can be maintained.

【0033】封止用蓋体7が、凹部4の周囲に形成された
窪み部5内に接合されても、基板1の他方主面から突出
することがないため、このためマザーボード10上にこ
の電子部品装置を安定して表面実装することができる。
Even if the sealing lid 7 is joined into the recess 5 formed around the recess 4, it does not protrude from the other main surface of the substrate 1. The electronic component device can be surface-mounted stably.

【0034】また、凹部4の開口周囲(蓋体の周囲)に
外部端子電極9を配置し、封止用蓋体7が接合される窪
み部5を充分な深さに設定すれば、マザーボード10上
に半田13を介して接合しても、封止用蓋体7に半田ブ
リッジが形成されることがなく、また、半田フラックス
を除去する洗浄性も向上することになる。
If the external terminal electrodes 9 are arranged around the opening of the recess 4 (around the lid) and the recess 5 to which the sealing lid 7 is joined is set to a sufficient depth, the mother board 10 Even if it is joined via the solder 13, no solder bridge is formed on the sealing lid 7, and the cleaning property for removing the solder flux is also improved.

【0035】マザーボード10に半田リフローなどで表
面実装を行なっても、熱ストレスによって金属層7aと
樹脂層7bとがそれぞれが剥離することがなく高い密着
力を得ることができる。
Even if surface mounting is performed on the motherboard 10 by solder reflow or the like, the metal layer 7a and the resin layer 7b do not peel off from each other due to thermal stress, and high adhesion can be obtained.

【0036】また、封止用蓋体7の全体の厚みは、高々
100μm前後またはそれ以下にすることができるため
封止した後、さらに、マザーボード10の実装時に凹部
4内の内圧の変化が発生しても、その内圧の変化に封止
用蓋体7自身が弾性変形し、内圧に追随されることにな
り、電子部品素子3の特性に変動をきたすことがない。
Further, since the entire thickness of the sealing lid 7 can be at most about 100 μm or less, a change in the internal pressure in the recess 4 occurs when the motherboard 10 is mounted after sealing. Even if the internal pressure changes, the sealing lid 7 itself elastically deforms and follows the internal pressure, so that the characteristics of the electronic component element 3 do not change.

【0037】封止用蓋体7の樹脂層7bを接着剤8とし
ても用いれば、上述したように電子部品装置の低背化が
達成でき、製造工程の簡略化も同時に達成できる。
If the resin layer 7b of the sealing lid 7 is also used as the adhesive 8, the height of the electronic component device can be reduced as described above, and the manufacturing process can be simplified at the same time.

【0038】上述の封止用蓋体7は、ステンレスの金属
層7aとポリミド樹脂からなる樹脂層7bを夫々12.
5μmの厚みで被覆している。そして金属層7aと樹脂
層7bとはキャスト法で直接接合されて形成される。
The sealing lid 7 includes a stainless steel metal layer 7a and a resin layer 7b made of a polyimide resin.
It is coated with a thickness of 5 μm. Then, the metal layer 7a and the resin layer 7b are formed by being directly joined by a casting method.

【0039】その他に、金属層7aを圧延銅箔で、樹脂
層7bをポリミド樹脂で構成することもできる。このと
きの金属層7aの厚みは18μmで、樹脂層7bの厚み
は12.5μmとしてもよい(封止用蓋体7全体の厚み
30.5μm)。そして、樹脂系接着剤8として10μ
mの熱可塑性ポリミドを用いても構わない。
Alternatively, the metal layer 7a may be made of a rolled copper foil, and the resin layer 7b may be made of a polyimide resin. At this time, the thickness of the metal layer 7a may be 18 μm, and the thickness of the resin layer 7b may be 12.5 μm (the thickness of the entire sealing lid 7 is 30.5 μm). Then, 10 μm is used as the resin adhesive 8.
m may be used.

【0040】さらに、封止用蓋体7の金属層7aが電解
銅箔で、樹脂層7bはポリミド樹脂で構成している。こ
のときの金属層7aの厚みは8μmで、樹脂層7bの厚
みは12.5μmであった。金属層7aはポリミドフィ
イルムにメッキで形成した。厚さ約20μmの複合材で
あっても構わない。
Further, the metal layer 7a of the sealing lid 7 is made of electrolytic copper foil, and the resin layer 7b is made of a polyimide resin. At this time, the thickness of the metal layer 7a was 8 μm, and the thickness of the resin layer 7b was 12.5 μm. The metal layer 7a was formed by plating a polyimide film. A composite material having a thickness of about 20 μm may be used.

【0041】さらに、封止用蓋部材7の金属層7aがS
US430で樹脂層7bはポリミド樹脂、7cは変性ポ
リミト系接着剤を被覆して構成している。このときの金
属層7aの厚みは30μmで、樹脂層7bの厚みは1
2.5μmであって構わない。この時、樹脂層7bは変
性ポリミド系接着剤を基板1の窪み部5へ接着する。こ
のときの封止条件は、所定圧力で、温度180℃で5分
の圧着であった。
Further, the metal layer 7a of the sealing lid member 7 is made of S
In US430, the resin layer 7b is formed by coating a polyimide resin, and the resin layer 7c is formed by coating a modified polymitotic adhesive. At this time, the thickness of the metal layer 7a is 30 μm, and the thickness of the resin layer 7b is 1 μm.
It may be 2.5 μm. At this time, the resin layer 7 b adheres the modified polyimide-based adhesive to the depression 5 of the substrate 1. The sealing conditions at this time were pressure bonding at a predetermined pressure at a temperature of 180 ° C. for 5 minutes.

【0042】以上の構造の電子部品装置22個を温度サ
イクル試験(−40〜100℃各30分500サイク
ル)高温高温試験(85℃/85%RH500時間)に
てフィルタ特性に異常ないことが確認した。
It was confirmed that the filter characteristics of 22 electronic component devices having the above-mentioned structure were not abnormal in a temperature cycle test (500 cycles of 30 minutes each at -40 to 100 ° C.) and a high temperature test (500 hours of 85 ° C./85% RH). did.

【0043】[0043]

【発明の効果】本発明の電子部品装置によれば、封止用
蓋体と電子部品装置の基板との接着性が高くなり、気密
性が高く信頼性が向上する。また、凹部内の内圧の変動
に追随でき、しかも、安定してマザーボードに実装でき
る。さらに、小型化の電子部品装置となる。また、凹部
内の電子部品素子の接合方法は、バンプやボンディング
ワイヤなど任意に選択することができる。
According to the electronic component device of the present invention, the adhesion between the sealing lid and the substrate of the electronic component device is increased, the airtightness is high, and the reliability is improved. Further, it can follow the fluctuation of the internal pressure in the concave portion, and can be mounted on the motherboard stably. Further, the electronic component device can be downsized. The method of joining the electronic component elements in the concave portion can be arbitrarily selected such as a bump or a bonding wire.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による電子部品装置の断面図である。FIG. 1 is a sectional view of an electronic component device according to the present invention.

【図2】本発明による電子部品装置の底面側の平面図で
ある。
FIG. 2 is a plan view of a bottom surface side of the electronic component device according to the present invention.

【図3】従来の電子部品装置の実装断面図である。FIG. 3 is a mounting cross-sectional view of a conventional electronic component device.

【符号の説明】[Explanation of symbols]

1・・基板 2、3・・電子部品 4・・凹部 5・・窪み部 7・・封止用蓋体 7a・・平板状金属層 7b・・樹脂層 8・・樹脂系接着剤 9・・外部端子電極 1, board 2, 3, electronic component 4, recess 5, recess 7, sealing lid 7a, flat metal layer 7b, resin layer 8, resin adhesive 9, etc. External terminal electrode

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】一面が開口した断面凹部を有する基板に、
電子部品素子を前記凹部に収納するとともに該凹部の開
口を封止用蓋体で封止した電子部品装置において、前記
封止用蓋体が、露出面側の金属層と、基板接合面側の樹
脂層との積層構造からなることを特徴とする電子部品装
置。
1. A substrate having a concave section having an open section on one side,
In an electronic component device in which an electronic component element is housed in the concave portion and an opening of the concave portion is sealed with a sealing lid, the sealing lid has an exposed surface side metal layer and a substrate bonding surface side. An electronic component device having a laminated structure with a resin layer.
【請求項2】 前記封止用蓋体と基板の凹部開口の周囲
とは、樹脂系接着剤を介して接合したことを特徴とする
請求項1の電子部品装置。
2. The electronic component device according to claim 1, wherein the sealing lid and the periphery of the recess opening of the substrate are joined via a resin adhesive.
【請求項3】 前記封止用蓋体と基板との接合は、封止
用蓋体の基板接合面側の樹脂層で行なうことを特徴とす
る請求項1の電子部品装置
3. The electronic component device according to claim 1, wherein the joining of the sealing cover and the substrate is performed by a resin layer on the substrate joining surface side of the sealing cover.
【請求項4】 前記凹部開口の周囲には、少なくとも前
記封止用蓋体の厚み以上の窪みが周設されているととも
に、前記窪み部の周囲の基板表面に外部端子電極が配置
されていることを特徴とする請求項1の電子部品装置。
4. A recess around the opening of the recess at least as thick as the sealing lid is provided, and an external terminal electrode is arranged on the surface of the substrate around the recess. 2. The electronic component device according to claim 1, wherein:
【請求項5】 前記基板の他方主面上に電子部品素子が
表面実装により配置されていることを特徴とする請求項
1の電子部品装置。
5. The electronic component device according to claim 1, wherein an electronic component element is disposed on the other main surface of the substrate by surface mounting.
JP2001055333A 2001-02-28 2001-02-28 Electronic component device Pending JP2002261236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001055333A JP2002261236A (en) 2001-02-28 2001-02-28 Electronic component device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001055333A JP2002261236A (en) 2001-02-28 2001-02-28 Electronic component device

Publications (1)

Publication Number Publication Date
JP2002261236A true JP2002261236A (en) 2002-09-13

Family

ID=18915532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001055333A Pending JP2002261236A (en) 2001-02-28 2001-02-28 Electronic component device

Country Status (1)

Country Link
JP (1) JP2002261236A (en)

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