JP2002261136A5 - - Google Patents

Description

Patent application title: Foreign matter inspection method and charged particle beam apparatus

Claims (13)

Scanning an inspection area where foreign matter of the sample on which the pattern is formed with an electron beam to obtain a secondary electron profile of the pattern including the foreign matter;
Scanning another region having the same pattern as the inspection region and having no foreign matter present with an electron beam to obtain a secondary electron profile of the pattern not containing the foreign matter;
Obtaining a secondary electron profile of the foreign substance from the secondary electron profile of the pattern containing the foreign substance and a secondary electron profile of the pattern not containing the foreign substance;
To include a determination step foreign matter whether or not Oite fatal to pattern by comparing the secondary electron profile of pattern without the secondary electron profile and foreign substances of the foreign matters Characteristic foreign body inspection method. 2. The foreign matter inspection method according to claim 1, wherein, in the determination step, a peak waveform of the secondary electron profile of the foreign particle and a peak waveform of the secondary electron profile of the pattern not including the foreign material contact or overlap. A foreign matter inspection method characterized in that the foreign matter is judged to be in contact with the pattern or overlap with the pattern at the location. 2. The foreign matter inspection method according to claim 1, wherein, in the determination step, the edge position of the peak waveform of the secondary electron profile of the foreign matter is an edge position on the foreign matter side of the peak waveform of the secondary electron profile of the pattern containing no foreign matter. A foreign matter inspection method characterized in that when a contact or a position beyond the edge position is present on the pattern side, it is determined that the foreign matter is in contact with the pattern or overlaps the pattern at that location. According to claim 1, 2 or 3 particle inspection method according, when one foreign to the line-and-space pattern is determined to be in contact with or overlaps the same time two or more lines, the foreign matter pattern particle inspection method characterized by determining that the Oite fatal. According to claim 1, 2 or 3 particle inspection method according, when the foreign object is determined to overlap the hole pattern, the foreign matter inspection and judging its foreign matter is Oite fatal pattern Method. The foreign matter inspection method according to any one of claims 1 to 5, wherein a distance between edges at both ends of a peak waveform of the secondary electron profile of the foreign matter is determined as a size of the foreign matter. A charged particle source, a charged particle optical system for focusing and scanning a charged particle beam emitted from the charged particle source on a sample, a sample stage for arranging the sample, and a sample generated by the scan of the charged particle beam A charged particle beam apparatus comprising: detection means for detecting a secondary signal;
Means for acquiring a secondary electron profile of a pattern including foreign matter by scanning an inspection area where foreign matter of a sample on which a pattern is formed is present with an electron beam, and another area having the same pattern as the inspection area Means for scanning a region where no foreign matter is present with an electron beam to obtain a secondary electron profile of the pattern not containing the foreign matter, a secondary electron profile of the pattern containing the foreign matter and a secondary electron of the pattern not containing the foreign matter It is determined whether foreign matter is in contact with or overlapped with the pattern by comparing the secondary electron profile of the foreign matter with the secondary electron profile of the foreign matter from the means for obtaining the secondary electron profile of the foreign matter from the profile. A charged particle beam device comprising: 8. The charged particle beam device according to claim 7, wherein the determination means has a portion where the peak waveform of the secondary electron profile of the foreign matter and the peak waveform of the secondary electron profile of the pattern not including the foreign matter contact or overlap. A charged particle beam apparatus characterized in that foreign matter is in contact with or overlapping a pattern at a location. 9. The charged particle beam device according to claim 7, wherein when it is determined that one foreign object is simultaneously in contact with or overlapped with two or more lines with respect to the line and space pattern, the foreign object is fatal in the pattern. A charged particle beam device characterized by determining that it is a target. The charged particle beam device according to claim 7 or 8, wherein the foreign matter is a hole pattern. A charged particle beam device characterized in that when it is determined that the foreign matter overlaps with the run, the foreign matter is determined to be fatal in the pattern. The charged particle beam device according to any one of claims 7 to 10, further comprising means for calculating the distance between the edges of the peak waveform of the secondary electron profile of the foreign substance as the size of the foreign substance. Charged particle beam equipment. A charged particle source, a charged particle optical system for focusing and scanning a charged particle beam emitted from the charged particle source on a sample, a sample stage for arranging the sample, and a sample generated by the scan of the charged particle beam A charged particle beam apparatus comprising: detection means for detecting a secondary signal;
Means for acquiring a secondary electron profile of a pattern including foreign matter by scanning an inspection area where foreign matter of a sample on which a pattern is formed is present with an electron beam, and another area having the same pattern as the inspection area Means for scanning a region where no foreign matter is present with an electron beam to obtain a secondary electron profile of the pattern not including the foreign matter, a secondary electron profile of the pattern including the foreign matter, and a secondary of the pattern not including the foreign matter And a means for determining from the electronic profile whether foreign matter is in contact with or overlapping with the pattern. 13. The charged particle beam device according to claim 7, wherein the determination means determines that the edge position of the peak waveform of the secondary electron profile of the foreign particle is on the foreign particle side of the peak waveform of the secondary electron profile of the pattern containing no foreign particle A charged particle beam device characterized in that when a contact with an edge position or a pattern side beyond the edge position is present on the pattern side, the foreign matter is in contact with the pattern at the position or overlaps the pattern.