JP2002257658A - Semiconductor pressure sensor for high temperature measurement - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor for measuring at a high temperature capable of detecting pressure while being little affected in such a chemical condition that chemicals are contained in a sample to be measured such as gas or liquid, the pressure of which is to be detected. SOLUTION: The semiconductor pressure sensor for measuring at a high temperature 10 is composed of a crystal sapphire layer 13 on which a pressure sensitive resistance element is laminated, and a main body 11, in which a bottom section 11B and a hollow section 11A are integrally formed, and the crystal sapphire layer 13 is bonded inside the bottom section 11B, being covered outside with a titanium oxide layer 16. The bottom section 11B is used as a pressure receiving section, and the pressure applied to the outside of the pressure receiving section is detected.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-temperature measuring semiconductor for detecting pressure without being affected by a chemical environment even if a chemical agent is contained in a gas or liquid pressure detection object for detecting pressure. The present invention relates to a pressure sensor.

[0002]

2. Description of the Related Art A semiconductor type pressure sensor for measuring high temperature detects a fluid pressure of a high temperature liquid. For example, an injection molding machine for detecting a fluid pressure of a polymer melt and a gas turbine engine for detecting an exhaust pressure. It is attached to and used.

A conventional semiconductor pressure sensor for measuring high temperature is:
For example, there is one disclosed in Japanese Unexamined Patent Publication No. 5-507150, and FIG. 3 is an external view of a conventional semiconductor type pressure sensor 30 for high temperature measurement.

As shown in FIG. 3, a semiconductor type pressure sensor 30 for measuring high temperature is mounted on a pressure sensor mounting portion 39 provided on a transport pipe for transporting a high-temperature gas or liquid, and a fluid applied as indicated by an arrow P. This is to detect pressure.

FIG. 4 is a sectional view of a conventional semiconductor pressure sensor 30 for measuring high temperature.

As shown in FIG. 4, a semiconductor type pressure sensor 30 for measuring high temperature has a cylindrical ceramic body body 31 and a gas or liquid body attached to an end of the body body 31 via a bonding layer 32. A circular thin plate-shaped crystalline sapphire diaphragm 33 which receives a fluid pressure, and a pressure-sensitive resistance element 34 laminated on the crystalline sapphire diaphragm 33 at the position of the concave portion 31 a formed in the body 31.
, A signal line 37 connected to the pressure-sensitive resistance element 34, and a screw portion 35.

When detecting the fluid pressure of the high-temperature gas or liquid flowing through the transport pipe by the high-temperature measuring semiconductor pressure sensor 30, the high-temperature measuring semiconductor pressure sensor 30 is attached to the pressure sensor mounting portion 39, and the arrow P When a fluid pressure of gas or liquid is applied to the crystalline sapphire diaphragm 33 as shown in FIG.
Receives the pressure and bends toward the concave portion 31a side, and the pressure change is output from the signal line 37 by the pressure-sensitive resistance element 34, and the pressure is detected.

[0008]

However, the conventional semiconductor type pressure sensor 30 for high temperature measurement has the following problems.

As described above, the high-temperature measuring semiconductor pressure sensor 30 can detect the fluid pressure of the gas or liquid flowing in the transport pipe by the deflection of the crystalline sapphire diaphragm 33. In some cases, a chemical agent such as an acidic substance or an alkaline substance is generated as a by-product in a fluid as a by-product by thermal excitation at a high temperature.

The body 31 is made of ceramic to reduce thermal deformation.
Since ceramic glass that reacts with a chemical agent to increase bonding strength is contained in the material, there is a possibility that a chemical change such as an acidic substance or an alkaline substance may be accepted.

Therefore, in the semiconductor type pressure sensor 30 for high temperature measurement, the stress balance of the crystalline sapphire diaphragm 33 changes due to the influence of the chemical agent on the body main body 31 and the bonding layer 32, and the pressure may be erroneously detected. is there.

SUMMARY OF THE INVENTION The present invention has been made in view of the above, and even if a chemical agent is contained in a gas or liquid pressure detection object for detecting a pressure, the pressure is not affected by the chemical environment. It is an object of the present invention to provide a high-temperature measuring semiconductor pressure sensor capable of detecting the pressure.

[0013]

According to the present invention, there is provided a semiconductor pressure sensor for high temperature measurement according to the present invention, wherein a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion are integrally formed, and the inside thereof is provided inside the bottom portion. A body main body having a crystalline sapphire layer bonded thereto and an outside covered with a titanium oxide layer, wherein the bottom is a pressure receiving portion, and a pressure applied to the outside of the pressure receiving portion is detected.

Further, in the semiconductor pressure sensor for high temperature measurement according to the present invention, a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion are integrally formed, and the crystalline sapphire layer is formed inside the bottom portion. And a body main body formed of a titanium alloy, and the pressure acting on the outside of the pressure receiving portion is detected by using the bottom portion as a pressure receiving portion.

Further, the semiconductor pressure sensor for high temperature measurement of the present invention is formed by joining a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow part and a bottom part, and forming the crystalline sapphire inside the bottom part. And a body main body that covers the outer surface with a titanium oxide layer. The bottom is a pressure receiving portion, and the pressure applied to the outside of the pressure receiving portion is detected.

The semiconductor pressure sensor for high temperature measurement according to the present invention is formed by joining a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion of a titanium alloy, and forming the hollow portion inside the bottom portion. And a body main body for joining the crystalline sapphire layer, wherein the bottom portion is used as a pressure receiving portion to detect a pressure applied to the outside of the pressure receiving portion.

Further, the bottom portion is provided with a groove or a dent inside along the circumferential direction.

Further, the bottom portion is provided with a concave portion at an outer central portion.

Further, the crystalline sapphire layer is bonded to the bottom through a bonding layer containing silver or gold as a main component and titanium.

[0020]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a semiconductor type pressure sensor 10 for high temperature measurement according to a first embodiment of the present invention, and FIG.
FIG. 1B is a cross-sectional view, and FIG. 1B is a plan view.

As shown in FIG. 1, the semiconductor type pressure sensor 10 for measuring high temperature has a crystalline sapphire layer 13 on which a pressure-sensitive resistance element 14 is laminated, a cylindrical portion 11A and a bottom portion 11B, and a crystal portion is provided on the bottom portion 11B. The body 11 is formed of a cup-shaped ceramic body body 11 for joining the sapphire layer 13 and a titanium alloy screw 15 attached to the body body 11.
It detects the pressure applied to the outside of 1B.

The crystalline sapphire layer 13 has a bottom 11 through a bonding layer 12 containing silver or gold as a main component and titanium.
B is joined inside.

The body main body 11 is provided with a recess 11c at the center of the outside of the bottom 11B where stress is concentrated so that the bottom 11B is easily bent, and covers the titanium oxide layer 16 on the outside. The bottom 11B is provided with a groove 11d along the circumferential direction in order to make the bottom 11B easily bendable.

The pressure-sensitive resistance element 14 is, for example, a P-type semiconductor element formed by applying a semiconductor manufacturing technique to the crystalline sapphire layer 13.
It is possible to set a plurality of pressure-sensitive resistive elements 14 at predetermined positions, and to change the length and cross-sectional area of the bottom portion 11B by bending under pressure, thereby changing the resistance value of the pressure-sensitive resistance element 14. There is a Wheatstone bridge circuit configuration that outputs a voltage signal according to pressure. Pressure-sensitive resistance element 1
4 is connected to a signal line 17 which passes through an insulating tube 18 and is connected to an amplifier circuit (not shown).

When the pressure of the gas or liquid flowing through the transport pipe is detected by the high-temperature measuring semiconductor pressure sensor 10, the high-temperature measuring semiconductor pressure sensor 10
5 is attached to an attachment portion (not shown) provided on the conveying pipe, and when fluid pressure is applied to the bottom portion 11B as shown by an arrow P, the bottom portion 11B bends inward, and the bending is laminated on the crystalline sapphire layer 13. The pressure is detected by the pressure-sensitive resistance element 14 and output as a pressure signal from the signal line 17 to detect the pressure.

As described above, in the semiconductor pressure sensor 10 for high temperature measurement of the first embodiment, even when a fluid containing a chemical agent such as an acidic substance or an alkaline substance flows in the transport pipe, the crystalline sapphire layer 13 is And the body main body 11 covers the titanium oxide layer 16 on the outside, so that the pressure can be detected without being affected by the influence, and the screw portion 15 is also formed of a titanium alloy. Therefore, it is not affected by chemical agents.

Further, since the body main body 11 is made of ceramic, it is hardly affected by heat, and the bottom 11B of the body main body 11 has a concave portion 11c and a groove 11d so that it is easily bent and has high sensitivity. The pressure of the fluid can be accurately detected.

In the semiconductor pressure sensor 10 for high temperature measurement according to the first embodiment, an example has been described in which the body main body 11 is formed of ceramic and the titanium oxide layer 16 is covered on the outside. It can also be formed of an alloy to detect pressure without being affected by chemical agents.

FIG. 2 shows a semiconductor type pressure sensor 20 for high temperature measurement according to a second embodiment of the present invention. FIG. 2 (A) shows a sectional view, and FIG. 2 (B) shows a plan view.

As shown in FIG. 2, the semiconductor pressure sensor 20 for measuring high temperature has a crystalline sapphire layer 23 on which a pressure-sensitive resistance element 24 is laminated, and a cylindrical portion 21A and a bottom portion 21B, which are formed separately. A ceramic body body 21 in the shape of a cup joining the crystalline sapphire layer 23 to the bottom 21B;
The body 21 includes a titanium alloy screw portion 25 attached to the body main body 21. The bottom portion 21B is used as a pressure receiving portion to detect a pressure applied to the outside of the bottom portion 21B.

As in the first embodiment, the crystalline sapphire layer 23 is bonded to the inside of the bottom portion 21B through a bonding layer 22 containing silver or gold as a main component and titanium, thereby forming the bottom portion 21B.
Has a titanium oxide layer 26 on the outside, a recess 21c in the center of the outside, and a groove 21d on the inside along the circumferential direction.

The pressure-sensitive resistance element 24 is, for example, a P-type semiconductor element laminated on the crystalline sapphire layer 23. A plurality of pressure-sensitive resistance elements 24 can be set at predetermined positions. The corresponding voltage signal is output. The pressure-sensitive resistance element 24 is connected to a signal line 27 that passes through an insulating tube 28 and is connected to an amplification circuit (not shown).

When detecting the fluid pressure of the gas or liquid flowing through the transfer pipe by the high-temperature measuring semiconductor pressure sensor 20, the high-temperature measuring semiconductor pressure sensor 20 is
5, when the fluid pressure is applied to the bottom portion 21B as shown by the arrow P, the bottom portion 21B is bent inward, and the bending is laminated on the crystalline sapphire layer 23. The pressure is detected by the pressure-sensitive resistance element 24 and output as a pressure signal from the signal line 27 to detect the pressure.

As described above, in the semiconductor pressure sensor 20 for high temperature measurement according to the second embodiment, even when a fluid containing a chemical agent such as an acidic substance or an alkaline substance flows in the transport pipe, the crystalline sapphire layer 23 is formed inside the bottom 21B. The bottom portion 21B, which is in contact with the fluid, covers the titanium oxide layer 26 outside, so that the pressure can be detected without being affected by the bottom portion 21B, and the screw portion 25 is also formed of a titanium alloy. Therefore, it is not affected by the chemical agent.

Further, since the bottom portion 21B is formed of ceramic, it is hardly affected by heat, so that the concave portion 21c and the groove 2c are formed.
1d, it is easy to bend, and the pressure of the fluid can be accurately and accurately detected.

Since the bottom portion 21B is separate from the cylindrical portion 21A, after the crystalline sapphire layer 23 on which the pressure-sensitive resistance element 24 is laminated is joined to the bottom portion 21B, the bottom portion 21B and the cylindrical portion 21A are separated from each other. Can be joined, and assembly of the body main body 21 can be further facilitated.

In the semiconductor pressure sensor 20 for high temperature measurement according to the second embodiment, an example has been described in which the bottom 21B is formed of ceramic and the outside is covered with the titanium oxide layer 26.
The pressure can be detected without being affected by the chemical agent by being formed of a heat-resistant titanium alloy.

In the semiconductor pressure sensors 10 and 20 for high temperature measurement of the first and second embodiments, the bottom portions 11B and 21B are
Although the grooves 11d and 21d are provided on the inner side along the circumferential direction, a depression may be provided instead of the grooves 11d and 21d. Further, grooves 11d, 2
1d may be provided at the outer ends of the bottoms 11B and 21B.

The cylindrical portions 11A, 21A and the bottom 11
B and 21B have a circular cross-sectional outer periphery, but the present invention is not limited to this, and may have a polygonal shape. The cylindrical portions 11A and 21A have a circular or polygonal hollow cross-sectional outer periphery. be able to.

Further, in the semiconductor pressure sensors 10 and 20 for high temperature measurement of the first and second embodiments, the pressure of the gas or liquid flowing in the transport pipe is detected. However, the present invention is not limited to this. The pressure in the container can also be detected.

[0042]

According to the semiconductor pressure sensor for high temperature measurement of the present invention, a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion are integrally formed, and the crystalline sapphire layer is formed inside the bottom portion. And a body body that covers the outside with a titanium oxide layer, and the pressure applied to the outside of the pressure receiving portion is determined by using the bottom portion as a pressure receiving portion,
Even if a chemical agent is contained in a gas or liquid pressure detection target for detecting pressure, a high-temperature pressure can be detected without being affected by the chemical environment.

The semiconductor pressure sensor for high temperature measurement according to the present invention is characterized in that a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion are integrally formed, and the crystalline sapphire layer is formed inside the bottom portion. And a body main body formed of a titanium alloy, and the bottom is used as a pressure receiving portion to detect the pressure applied to the outside of the pressure receiving portion. Even if a chemical agent is contained, high-temperature pressure can be detected without being affected by the chemical environment.

The semiconductor pressure sensor for high temperature measurement according to the present invention is formed by joining a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion, and forming the crystalline sapphire layer inside the bottom portion. And a body main body that covers the outer surface with a titanium oxide layer. The bottom is a pressure receiving portion, and the pressure applied to the outside of the pressure receiving portion is detected. Even if a chemical agent is contained in the pressure detector, high-temperature pressure can be detected without being affected by the chemical environment. Further, after joining the crystalline sapphire layer on which the pressure-sensitive resistance element is laminated to the bottom, the hollow portion and the bottom can be joined, so that the assembly of the body body can be further facilitated.

The semiconductor pressure sensor for high temperature measurement according to the present invention is formed by joining a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion of a titanium alloy, and forming the hollow portion inside the bottom portion. A body body that joins the crystalline sapphire layer, and the bottom is used as a pressure receiving portion to detect pressure applied to the outside of the pressure receiving portion. , The pressure of the high temperature fluid can be detected without being affected by the chemical environment.

In addition, since the bottom is provided with a groove or a recess inside or outside along the circumferential direction,
The pressure can be detected easily and with high sensitivity.

Further, since the bottom is provided with a concave portion in the outer central portion, the pressure can be easily detected and the pressure can be detected with high sensitivity.

Further, since the crystalline sapphire layer is bonded to the bottom portion through a bonding layer containing silver or gold as a main component and containing titanium, the crystalline sapphire layer and the bottom portion are surely bonded with high strength. can do.

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor pressure sensor for high temperature measurement according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a semiconductor pressure sensor for high temperature measurement according to a second embodiment of the present invention.

FIG. 3 shows an external view of a conventional semiconductor pressure sensor for high temperature measurement.

FIG. 4 is a sectional view of a conventional semiconductor pressure sensor for measuring high temperature.

[Explanation of symbols]

 10, 20 Semiconductor type pressure sensor for high temperature measurement 11, 21 Body main body 11A, 21A Cylindrical part 11B, 21B Bottom part 11c, 21c Concave part 11d, 21d Groove 12,22 Bonding layer 13,23 Crystalline sapphire layer 14,24 Pressure sensitive Resistance element 15, 25 Screw part 16, 26 Titanium oxide layer

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2F055 AA21 AA31 AA39 BB19 CC02 DD19 EE13 FF11 FF38 FF43 GG25 4M112 CA07 CA12 EA11 EA20 FA08 GA01

Claims (7)

[The claims] 1. A crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion are integrally formed, the crystalline sapphire layer is joined to the inside of the bottom portion, and the outside is covered with a titanium oxide layer. A semiconductor type pressure sensor for high temperature measurement, comprising: a body main body, wherein the bottom portion is a pressure receiving portion and a pressure applied outside the pressure receiving portion is detected. 2. A body main body formed of a titanium alloy, in which a crystalline sapphire layer for laminating a pressure-sensitive resistance element, a hollow portion and a bottom portion are integrally formed, and the crystalline sapphire layer is bonded inside the bottom portion. A semiconductor pressure sensor for measuring high temperature, wherein the bottom portion is a pressure receiving portion and the pressure applied to the outside of the pressure receiving portion is detected. 3. A crystalline sapphire layer for stacking a pressure-sensitive resistance element, formed by joining a hollow portion and a bottom portion, joining the crystalline sapphire layer inside the bottom portion, and coating a titanium oxide layer on the outside. A semiconductor body sensor for measuring high temperature, characterized in that the pressure sensor has a bottom body as a pressure receiving portion and detects a pressure applied outside the pressure receiving portion. 4. A crystalline sapphire layer for laminating a pressure-sensitive resistance element and a body main body formed by joining a hollow portion and a bottom portion of a titanium alloy and joining the crystalline sapphire layer inside the bottom portion. A semiconductor pressure sensor for measuring high temperature, wherein the bottom portion is a pressure receiving portion and the pressure applied to the outside of the pressure receiving portion is detected. 5. The semiconductor pressure sensor according to claim 1, wherein the bottom has a groove or a depression along a circumferential direction. 6. The semiconductor pressure sensor for high temperature measurement according to claim 1, wherein the bottom has a concave portion provided at an outer central portion. 7. The method according to claim 1, wherein the crystalline sapphire layer is bonded to the bottom portion via a bonding layer containing silver or gold as a main component and containing titanium. The semiconductor pressure sensor for high temperature measurement according to the above.