JP2002252397A - Optical fiber and optical amplifier - Google Patents
Optical fiber and optical amplifierInfo
- Publication number
- JP2002252397A JP2002252397A JP2001047098A JP2001047098A JP2002252397A JP 2002252397 A JP2002252397 A JP 2002252397A JP 2001047098 A JP2001047098 A JP 2001047098A JP 2001047098 A JP2001047098 A JP 2001047098A JP 2002252397 A JP2002252397 A JP 2002252397A
- Authority
- JP
- Japan
- Prior art keywords
- band
- optical
- optical fiber
- amplifier
- optical amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C13/00—Fibre or filament compositions
- C03C13/04—Fibre optics, e.g. core and clad fibre compositions
- C03C13/045—Silica-containing oxide glass compositions
- C03C13/046—Multicomponent glass compositions
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光ファイバ及びそ
れを用いた光増幅器に係り、特に、シングルモード光フ
ァイバの１．３μｍ帯の信号光増幅に有用な、Ｂｉ（ビ
スマス）ドープ石英ガラスを用いた光ファイバ及び光増
幅器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical fiber and an optical amplifier using the same. The present invention relates to an optical fiber and an optical amplifier used.
【０００２】[0002]
【従来の技術】情報通信における光伝送路として主に使
用されている光ファイバは、伝送距離や帯域の観点から
シングルモード光ファイバが主流である。その光の波長
としては１．３μｍ帯と１．５μｍ帯があり、特に、通
信系には、１．３μｍ帯が使われている。１．３μｍ帯
は石英ファイバが零分散を示す波長であり、伝送歪みの
少ない光通信が可能である。１．５μｍ帯における伝送
では分散を補償した特殊な光ファイバを用いることで歪
を低減させるためコスト高になる。長距離に光信号を伝
送する光ファイバ伝送システムは、途中、光信号を増幅
するために光ファイバ増幅器を有している。光を光のま
まで増幅する方式として、１．５μｍ帯ではエルビウム
（Ｅｒ）をドープした光ファイバ増幅器やラマン増幅器
が実用化されている。2. Description of the Related Art As an optical fiber mainly used as an optical transmission line in information communication, a single mode optical fiber is mainly used from the viewpoint of a transmission distance and a band. The wavelength of the light includes a 1.3 μm band and a 1.5 μm band. In particular, the 1.3 μm band is used for a communication system. The 1.3 μm band is a wavelength at which the silica fiber exhibits zero dispersion, and optical communication with little transmission distortion is possible. In the transmission in the 1.5 μm band, the use of a special optical fiber whose dispersion is compensated for reduces distortion and increases costs. An optical fiber transmission system for transmitting an optical signal over a long distance has an optical fiber amplifier on the way to amplify the optical signal. As a method for amplifying light as it is, an optical fiber amplifier or a Raman amplifier doped with erbium (Er) has been put to practical use in the 1.5 μm band.
【０００３】図１０は従来の半導体光増幅器の構成図で
ある。FIG. 10 is a configuration diagram of a conventional semiconductor optical amplifier.
【０００４】この図において、１０１は入射端、１０
２，１０５は光ファイバ、１０３は入力光信号、１０４
は半導体レーザ、１０６は出力光信号、１０７は出射端
である。入力光信号１０３は半導体レーザ１０４によっ
て増幅され、出射端１０７から出力される。In FIG. 1, reference numeral 101 denotes an incident end,
2, 105 is an optical fiber, 103 is an input optical signal, 104
Is a semiconductor laser, 106 is an output optical signal, and 107 is an emission end. The input optical signal 103 is amplified by the semiconductor laser 104 and output from the emission end 107.
【０００５】図１１は従来の光ファイバ増幅器の構成図
である。FIG. 11 is a configuration diagram of a conventional optical fiber amplifier.
【０００６】この図において、１１１は入射端、１１
２，１１５，１１７は通常の光ファイバ、１１３は入力
光信号、１１４は励起部としての半導体レーザ、１１６
は増幅部（希土類ドープファイバ）、１１８は出力光信
号、１１９は出射端である。半導体レーザ１１４からの
励起光を増幅部１１６へ送ると、この増幅部１１６から
は増幅された出力光信号１１８が出射端１１９から出力
される。In this figure, 111 is an incident end, 11
2, 115, 117 are ordinary optical fibers, 113 is an input optical signal, 114 is a semiconductor laser as an excitation unit, 116
Is an amplification section (rare-earth doped fiber), 118 is an output optical signal, and 119 is an emission end. When the pumping light from the semiconductor laser 114 is sent to the amplifier 116, the amplifier 116 outputs an amplified output optical signal 118 from the emission end 119.
【０００７】[0007]
【発明が解決しようとする課題】ところで、上記したエ
ルビウムをドープした光ファイバ増幅器は１．３μｍ帯
の増幅には適していない。このためプラセオジム（Ｐ
ｒ）をドープしたフッ素系の光ファイバ増幅器が開発さ
れた（特開平５−７５１９１号，特開平７−１４９５３
８号参照）。The above-mentioned erbium-doped optical fiber amplifier is not suitable for 1.3 μm band amplification. For this reason, Praseodymium (P
r) -doped fluorine-based optical fiber amplifiers have been developed (JP-A-5-75191, JP-A-7-149953).
No. 8).
【０００８】しかしながら、それはフッ化物系のファイ
バであるため、伝送路に使われている石英系ファイバと
のマッチングの問題やコストアップの課題がある。However, since it is a fluoride-based fiber, there is a problem of matching with a quartz-based fiber used in a transmission line and a problem of cost increase.
【０００９】また、ネオジム（Ｎｄ）ドープファイバ
は、１．３μｍ帯ではＥＳＡ（Ｅｘｃｉｔｅｄ Ｓｔａ
ｔｅ Ａｂｓｏｒｐｔｉｏｎ：励起状態吸収）の影響が
大きく効率が悪くなる。Further, neodymium (Nd) -doped fiber has an ESA (Excited Sta.) In the 1.3 μm band.
The influence of te Absorption (excitation state absorption) is large and the efficiency is reduced.
【００１０】また、ラマン増幅器はその効率が高々５％
である。The efficiency of a Raman amplifier is at most 5%.
It is.
【００１１】本発明は、上記問題点を除去し、高効率の
１．３μｍ帯の増幅に適した光ファイバ及び増幅器を提
供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an optical fiber and an amplifier suitable for high-efficiency 1.3 μm band amplification, which eliminates the above-mentioned problems.
【００１２】また、光を励起する半導体レーザとして、
０．８μｍ帯のＧａＡｌＡｓ系半導体レーザが使用でき
れば、小型、安価で実用的な光増幅器の励起用光源にな
る。Further, as a semiconductor laser for exciting light,
If a 0.8 μm band GaAlAs-based semiconductor laser can be used, it will be a small, inexpensive and practical light source for pumping an optical amplifier.
【００１３】本発明は、０．８μｍ帯の励起で、１．３
μｍ帯の光信号増幅器を作ることにある。According to the present invention, 1.3 μm is excited by 0.8 μm band excitation.
An object of the present invention is to produce a μm band optical signal amplifier.
【００１４】本願発明者らは、既にＢｉドープ石英ガラ
スに関する提案をしている（特開平１１−２９３３４
号）。これは、石英ガラスにゼオライトを均一に分散
し、ゼオライトのユニットセル内の中央にＢｉがクラス
タ化されてドープされているものである。The present inventors have already proposed a Bi-doped quartz glass (JP-A-11-29334).
issue). In this method, zeolite is uniformly dispersed in quartz glass, and Bi is clustered and doped in the center of the zeolite unit cell.
【００１５】また、吸収ピークとして５００ｎｍと７０
０ｎｍを示し、８００ｎｍ近辺はない。Ｂｉドープの光
増幅器の研究を進め、組成、製法で先行した既出願とは
異なり、本発明では、０．８μｍ帯で１．３μｍ帯の発
光する増幅器材料を見い出した。The absorption peaks at 500 nm and 70 nm
It indicates 0 nm and there is no near 800 nm. Research on Bi-doped optical amplifiers has been advanced, and in contrast to the prior application in which the composition and manufacturing method were prior, the present inventors have found an amplifier material that emits light in the 0.8 μm band and the 1.3 μm band.
【００１６】[0016]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕光ファイバにおいて、Ｂｉをドープした石英ガラ
ス〔ｘＢｉ2 Ｏ3 −ｙＡｌ2 Ｏ3 −（１−ｘ−ｙ）Ｓｉ
Ｏ2 〕が、モル％でＢｉ2 Ｏ3 は０．１から１０．０
％、Ａｌ2 Ｏ3 は２から２０％で、かつ、ｘ＜ｙである
ことを特徴とする。To achieve the above object, the present invention provides: [1] Bi-doped quartz glass [xBi 2 O 3 -yAl 2 O 3- (1-x- y) Si
O 2] is, Bi 2 O 3 in mole percent from 0.1 10.0
%, Al 2 O 3 is 2 to 20%, and x <y.
【００１７】〔２〕上記〔１〕記載の光ファイバにおい
て、前記Ｂｉからの発光であり、原子価が３又は５であ
ることを特徴とする。[2] The optical fiber according to the above [1], wherein the light is emitted from the Bi and has a valence of 3 or 5.
【００１８】〔３〕光増幅器において、Ｂｉをドープし
た石英ガラス〔ｘＢｉ2 Ｏ3 −ｙＡｌ2 Ｏ3 −（１−ｘ
−ｙ）ＳｉＯ2 〕が、モル％でＢｉ2 Ｏ3 は０．１から
１０．０％、Ａｌ2 Ｏ3 は２から２０％で、かつ、ｘ＜
ｙであり、１．３μｍ帯の信号光増幅を行う光ファイバ
を用いたことを特徴とする。[3] In an optical amplifier, Bi-doped quartz glass [xBi 2 O 3 -yAl 2 O 3- (1-x
-Y) SiO 2] is, Bi 2 O 3 is 10.0% from 0.1 in mole% Al 2 O 3 is from 2 to 20%, and, x <
y, wherein an optical fiber for amplifying the signal light in the 1.3 μm band is used.
【００１９】〔４〕上記〔３〕記載の光増幅器におい
て、０．８μｍ帯の半導体レーザ励起により１．３μｍ
帯の信号光増幅を行うことを特徴とする。[4] The optical amplifier according to [3], wherein the 1.3 μm band is pumped by a 0.8 μm band semiconductor laser.
It is characterized in that band signal light amplification is performed.
【００２０】〔５〕上記〔４〕記載の光増幅器におい
て、前記０．８μｍ帯の半導体レーザ励起は、０．８μ
ｍ帯のＧａＡｌＡｓ系半導体レーザによることを特徴と
する。[5] In the optical amplifier according to the above [4], the semiconductor laser excitation in the 0.8 μm band is 0.8 μm.
It is characterized by an m-band GaAlAs-based semiconductor laser.
【００２１】[0021]
【発明の実施の形態】以下に本発明の実施の形態を詳細
に説明する。Embodiments of the present invention will be described below in detail.
【００２２】まず、ガラス作製について説明する。First, glass production will be described.
【００２３】Ｂｉ2 Ｏ3 ，Ａｌ2 Ｏ3 ，ＳｉＯ2 の各粉
末（市販品）を所望のモル比になるように秤量し、乳鉢
にて粉砕・混合する。実験では合計２ｇにした。それか
ら、それを石英るつぼに入れ、１７５０℃で、１時間保
持し、徐冷して板状のガラスを作製した。Each powder of Bi 2 O 3 , Al 2 O 3 , and SiO 2 (commercially available) is weighed so as to have a desired molar ratio, and is crushed and mixed in a mortar. In the experiment, the total was 2 g. Then, it was put in a quartz crucible, kept at 1750 ° C. for 1 hour, and gradually cooled to produce a plate-like glass.
【００２４】図１は本発明にかかるＢｉ（ビスマス）を
ドープした石英ガラスの組成図である。FIG. 1 is a composition diagram of Bi (bismuth) -doped quartz glass according to the present invention.
【００２５】ｘＢｉ2 Ｏ3 −ｙＡｌ2 Ｏ3 −（１−ｘ−
ｙ）ＳｉＯ2 であり、モル％でＢｉ2 Ｏ3 は０．１から
１０．０％、Ａｌ2 Ｏ3 は２から２０％で、かつｘ＜ｙ
であり、三角形のほぼ左半分に対応する。XBi 2 O 3 -yAl 2 O 3- (1-x-
y) SiO 2 , in mole% Bi 2 O 3 from 0.1 to 10.0%, Al 2 O 3 from 2 to 20% and x <y
, Corresponding to approximately the left half of the triangle.
【００２６】なお、これは、ｘ＜ｙの領域がクリアなガ
ラスになる。ＳｉＯ2 が８０％以下では石英系ガラスの
特性が損なわれる。これは、Ｂｉ、特に、Ｂｉ+5からの
発光であると思われる。This is a glass in which the area of x <y is clear. If the SiO 2 content is 80% or less, the characteristics of the quartz glass are impaired. This appears to be emission from Bi, especially Bi + 5 .
【００２７】（実施例１）モル比でＢｉ2 Ｏ3 ：Ａｌ2
Ｏ3 ：ＳｉＯ2 ＝０．３：２．２：９７．５（重量比で
２．３：３．７：９４）、８３３ｎｍでの発光特性を図
２に示す。Example 1 Bi 2 O 3 : Al 2 in molar ratio
FIG. 2 shows the emission characteristics at O 3 : SiO 2 = 0.3: 2.2: 97.5 (2.3: 3.7: 94 in weight ratio) and 833 nm.
【００２８】この図２において、横軸は波長（ｎｍ）、
縦軸は強度（相対単位）を示している。In FIG. 2, the horizontal axis is wavelength (nm),
The vertical axis indicates intensity (relative unit).
【００２９】ここで、その分光透過特性は、図３に示さ
れる。この図において、横軸は波長（ｎｍ）、縦軸は透
過度（％）を示している。Here, the spectral transmission characteristics are shown in FIG. In this figure, the horizontal axis represents wavelength (nm), and the vertical axis represents transmittance (%).
【００３０】この図から明らかなように、泡が多くその
透過度は３０％と低い。これは端面反射の影響もある
が、１．３μｍ帯では自己吸収がない。As is apparent from this figure, there are many bubbles and the transmittance is as low as 30%. This is affected by end face reflection, but there is no self absorption in the 1.3 μm band.
【００３１】また、Ｘ線回折は図４に示されるが、試料
が非晶質であることを示している。X-ray diffraction is shown in FIG. 4, which shows that the sample is amorphous.
【００３２】更に、蛍光寿命は、図５に示されるよう
に、室温での蛍光寿命は６３０μｓと長い。従来の結晶
では、数μｓであることからすると、随分と長い蛍光寿
命を有する。Further, as shown in FIG. 5, the fluorescence lifetime at room temperature is as long as 630 μs. The conventional crystal has a considerably long fluorescence lifetime in view of several μs.
【００３３】（実施例２）モル比でＢｉ2 Ｏ3 ：Ａｌ2
Ｏ3 ：ＳｉＯ2 ＝３：７：９０（重量比で１８．６：
９．５：７２）、８３３ｎｍでの発光特性は、図６に示
される。この図６において、横軸は波長（ｎｍ）、縦軸
は強度（相対単位）を示している。Example 2 Bi 2 O 3 : Al 2 in molar ratio
O 3 : SiO 2 = 3: 7: 90 (18.6:
9.5: 72), and the emission characteristics at 833 nm are shown in FIG. In FIG. 6, the horizontal axis represents wavelength (nm), and the vertical axis represents intensity (relative unit).
【００３４】分光透過特性は、図７に示される。この図
７において、横軸は波長（ｎｍ）、縦軸は透過度（％）
を示している。その透過度は端面反射の影響で８０％が
上限である。FIG. 7 shows the spectral transmission characteristics. In FIG. 7, the horizontal axis represents wavelength (nm), and the vertical axis represents transmittance (%).
Is shown. The upper limit of the transmittance is 80% due to the influence of the end face reflection.
【００３５】（実施例３）モル比でＢｉ2 Ｏ3 ：Ａｌ2
Ｏ3 ：ＳｉＯ2 ＝１．５：３．５：９５（重量比で１
０．３：５．３：８４）、８３３ｎｍでの発光特性は、
図８に示される。この図８においては、横軸は波長（ｎ
ｍ）、縦軸は強度（相対単位）を示している。Example 3 Bi 2 O 3 : Al 2 in molar ratio
O 3 : SiO 2 = 1.5: 3.5: 95 (1 by weight ratio)
0.3: 5.3: 84), the emission characteristics at 833 nm are:
As shown in FIG. In FIG. 8, the horizontal axis represents the wavelength (n
m), and the vertical axis indicates intensity (relative unit).
【００３６】（実施例４）モル比でＢｉ2 Ｏ3 ：Ａｌ2
Ｏ3 ：ＳｉＯ2 ＝６：１４：８０（重量比で３１：１
５．８：５３）、８３３ｎｍでの発光特性は、図９に示
される。この図９においては、横軸は波長（ｎｍ）、縦
軸は強度（相対単位）を示している。Example 4 Bi 2 O 3 : Al 2 in molar ratio
O 3 : SiO 2 = 6: 14: 80 (31: 1 by weight)
5.8: 53), and the emission characteristics at 833 nm are shown in FIG. In FIG. 9, the horizontal axis represents wavelength (nm), and the vertical axis represents intensity (relative unit).
【００３７】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
【００３８】[0038]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。As described above, according to the present invention, the following effects can be obtained.
【００３９】（Ａ）Ｂｉをドープした石英ガラスからな
る光ファイバでもって、伝送歪の少ない１．３μｍ帯の
増幅器を構成することが可能である。(A) An optical fiber made of silica glass doped with Bi makes it possible to configure a 1.3 μm band amplifier with little transmission distortion.
【００４０】（Ｂ）石英系であるので伝送の石英ファイ
バとの融着接続等のマッチングが良好である。(B) Since it is of a quartz type, good matching such as fusion splicing with a transmission quartz fiber is excellent.
【００４１】（Ｃ）通常のガラス製作プロセス・材料と
同じであり低価格である。(C) It is the same as a normal glass manufacturing process and material, and is inexpensive.
【００４２】（Ｄ）高出力のレーザ媒質としての応用が
可能である。(D) Application as a high-output laser medium is possible.
【００４３】（Ｅ）出力光の半値幅が、３００ｎｍと広
く（Ｅｒドープ光ファイバの５〜６倍）、広い帯域をカ
バーすることができる。(E) The half width of the output light is as wide as 300 nm (5 to 6 times that of the Er-doped optical fiber), and a wide band can be covered.
【００４４】（Ｆ）光を励起する半導体レーザとして、
０．８μｍ帯のＧａＡｌＡｓ系半導体レーザが使用でき
るので、小型、安価で実用的な光増幅器の励起用光源を
構成することができる。つまり、０．８μｍ帯の励起
で、１．３μｍ帯の光信号増幅器を構築することができ
る。(F) As a semiconductor laser for exciting light,
Since a 0.8 μm band GaAlAs-based semiconductor laser can be used, a small, inexpensive and practical light source for pumping an optical amplifier can be constructed. That is, an optical signal amplifier in the 1.3 μm band can be constructed by pumping in the 0.8 μm band.
【００４５】（Ｇ）量子効率が６０〜７０％であり、従
来のラマン増幅器（量子効率が高々５％）よりも高い効
率を望むことができる。(G) The quantum efficiency is 60 to 70%, and it is possible to expect higher efficiency than a conventional Raman amplifier (quantum efficiency is at most 5%).
【００４６】（Ｈ）分散補償ファイバを使わなくても良
く、低コストである。(H) It is not necessary to use a dispersion compensating fiber, and the cost is low.
【図１】本発明にかかるＢｉ（ビスマス）をドープした
石英ガラスの組成図である。FIG. 1 is a composition diagram of quartz glass doped with Bi (bismuth) according to the present invention.
【図２】本発明の第１実施例の８３３ｎｍでの発光特性
図である。FIG. 2 is an emission characteristic diagram at 833 nm of the first embodiment of the present invention.
【図３】本発明の第１実施例の分光透過特性図である。FIG. 3 is a spectral transmission characteristic diagram of the first embodiment of the present invention.
【図４】本発明の第１実施例のＸ線回折特性図である。FIG. 4 is an X-ray diffraction characteristic diagram of the first example of the present invention.
【図５】本発明の第１実施例のスペクトル特性の要約図
である。FIG. 5 is a summary diagram of spectral characteristics of the first embodiment of the present invention.
【図６】本発明の第２実施例の８３３ｎｍでの発光特性
図である。FIG. 6 is a graph showing emission characteristics at 833 nm according to the second embodiment of the present invention.
【図７】本発明の第２実施例の分光透過特性図である。FIG. 7 is a spectral transmission characteristic diagram of a second embodiment of the present invention.
【図８】本発明の第３実施例の８３３ｎｍでの発光特性
図である。FIG. 8 is a graph showing light emission characteristics at 833 nm of a third example of the present invention.
【図９】本発明の第４実施例の８３３ｎｍでの発光特性
図である。FIG. 9 is a graph showing emission characteristics at 833 nm according to a fourth embodiment of the present invention.
【図１０】従来の半導体光増幅器の構成図である。FIG. 10 is a configuration diagram of a conventional semiconductor optical amplifier.
【図１１】従来の光ファイバー増幅器の構成図である。FIG. 11 is a configuration diagram of a conventional optical fiber amplifier.
フロントページの続き Ｆターム(参考） 2H050 AA01 AB18Z AD00 4G062 AA06 BB02 CC01 DA07 DA08 DB03 DB04 DC01 DD01 DE01 DF01 EA01 EA10 EB01 EC01 ED01 EE01 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 FL01 GA02 GA03 GB01 GC01 GD01 GE01 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 LA10 LB10 MM04 NN19 5F072 AB07 AK06 JJ20 PP07 Continued on the front page F term (reference) 2H050 AA01 AB18Z AD00 4G062 AA06 BB02 CC01 DA07 DA08 DB03 DB04 DC01 DD01 DE01 DF01 EA01 EA10 EB01 EC01 ED01 EE01 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FG01 F01 GA01 GE01 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 LA10 LB10 MM04 NN19 5F072 AB07 AK06 JJ20 PP07
Claims (5)
Ｏ3 −ｙＡｌ2 Ｏ3−（１−ｘ−ｙ）ＳｉＯ2 〕が、モ
ル％でＢｉ2 Ｏ3 は０．１から１０．０％、Ａｌ2 Ｏ3
は２から２０％で、かつ、ｘ＜ｙであることを特徴とす
る光ファイバ。A quartz glass doped with Bi [xBi 2
O 3 -yAl 2 O 3- (1-xy) SiO 2 ], but 0.1 to 10.0% of Bi 2 O 3 in mole%, Al 2 O 3
Is 2 to 20%, and x <y.
記Ｂｉからの発光であり、原子価が３又は５であること
を特徴とする光ファイバ。2. The optical fiber according to claim 1, wherein said optical fiber emits light from said Bi and has a valence of 3 or 5.
Ｏ3 −ｙＡｌ2 Ｏ3−（１−ｘ−ｙ）ＳｉＯ2 〕が、モ
ル％でＢｉ2 Ｏ3 は０．１から１０．０％、Ａｌ2 Ｏ3
は２から２０％で、かつ、ｘ＜ｙであり、１．３μｍ帯
の信号光増幅を行う光ファイバを用いたことを特徴とす
る光増幅器。3. Bi-doped quartz glass [xBi 2
O 3 -yAl 2 O 3- (1-xy) SiO 2 ] is 0.1 to 10.0% by mole of Bi 2 O 3 and Al 2 O 3
Is an optical amplifier wherein 2 to 20% and x <y, and an optical fiber for amplifying a signal light in a 1.3 μm band is used.
８μｍ帯の半導体レーザ励起により１．３μｍ帯の信号
光増幅を行うことを特徴とする光増幅器。4. The optical amplifier according to claim 3, wherein said optical amplifier has an output voltage of 0.1.
An optical amplifier characterized by performing signal light amplification in a 1.3 μm band by excitation of a semiconductor laser in an 8 μm band.
０．８μｍ帯の半導体レーザ励起は、０．８μｍ帯のＧ
ａＡｌＡｓ系半導体レーザによることを特徴とする光増
幅器。5. The optical amplifier according to claim 4, wherein the pumping of the semiconductor laser in the 0.8 μm band is performed using
An optical amplifier using an aAlAs-based semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001047098A JP4183225B2 (en) | 2001-02-22 | 2001-02-22 | Optical amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001047098A JP4183225B2 (en) | 2001-02-22 | 2001-02-22 | Optical amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002252397A true JP2002252397A (en) | 2002-09-06 |
| JP4183225B2 JP4183225B2 (en) | 2008-11-19 |
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ID=18908603
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|---|---|---|---|
| JP2001047098A Expired - Fee Related JP4183225B2 (en) | 2001-02-22 | 2001-02-22 | Optical amplifier |
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|---|---|
| JP (1) | JP4183225B2 (en) |
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