JP2002252394A - Magnetoresistance effect element, magnetoresistance effect type magnetic head, and manufacturing method for them - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the sensitivity and stability of a magnetoresistance effect(MR) element, in which magnetic flux guides are magnetically coupled with an MR element section having a magnetism sensing layer. SOLUTION: The MR element is constituted in such a way that a stabilized antiferromagnetic layer 21 is arranged on the film surface of at least one of the magnetism sensing layers, a front magnetic flux guide 8, and rear magnetic flux guide 9 of the MR element section 35, by making direct bonding exchange interaction or long-distance bonding the exchange interaction through a nonmagnetic spacer layer 22. Consequently, the direction of the axis of easy magnetization of at least one of the magnetism sensing layers, the front magnetic flux guide 8, and the rear magnetic flux guide 9 of the MR element section 35 can be set in an optimal state by performing the direct bonding the exchange interaction or the long-distance bonding with the exchange with the antiferromagnetic layer 21 in a state where no external detection magnetic field is given, and thus, the MR element is improved in sensitivity, stability, and noise.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-resistance effect element, a magneto-resistance effect type magnetic head, and a method of manufacturing the same.

[0002]

2. Description of the Related Art A magneto-resistive effect element (hereinafter referred to as an MR element), for example, an MR using a general ordinary anisotropic magneto-resistive effect.
An element (hereinafter referred to as an AMR element), a spin valve type giant magnetoresistive element (hereinafter referred to as an SV type GMR element),
In a tunnel barrier type magnetoresistive element (hereinafter referred to as a TMR element), an MR element portion having a magnetic sensing layer that causes a change in magnetoresistance by applying a detection external magnetic field to be detected is applied with the detection external magnetic field. Since the arrangement facing the front surface is likely to be affected by the damage and wear of the MR element portion and the heat of sliding with the magnetic recording medium, the life may be shortened. There has been proposed a configuration in which an MR element is disposed at a position further retracted, and a front magnetic flux guide for introducing a detection magnetic field to the MR element is provided in front of the MR element. In addition, with the arrangement of the front magnetic flux guide, or without arranging the front magnetic flux guide, a rear magnetic flux guide is arranged on the opposite side so that the detection magnetic field efficiently passes through the MR element portion. Proposals have been made to increase the efficiency of the magnetoresistance effect.

FIG. 20 shows a so-called bottom type SV GM.
FIG. 1 is a schematic cross-sectional view of an MR element portion 5 formed by R, in which an antiferromagnetic layer 1 and a fixed magnetic layer 2 bonded thereto
And a non-magnetic conductive layer 3 and a free magnetic layer 4 serving as a magnetic sensing layer whose magnetization direction is changed by a detected external magnetic field. MR element 5 using this SV type GMR
In this case, the effect of the change in resistivity depending on the magnetization direction of the fixed magnetic layer 2 and the free magnetic layer 4 is used. That is, when the magnetization states of both magnetic layers are parallel, the resistance has a minimum value, and when the magnetization states are antiparallel, the resistance has a maximum value. And generally, this SV type G
In the initial state of the MR element 5, that is, in the state where no external magnetic field is applied, the magnetization directions of the two magnetic layers are set to be orthogonal to each other.

As shown in FIG. 20, the application of the sense current Is to the MR element portion 5 by the SV type GMR is performed by applying a CPP (Current Perpedicular to
Plane) CIP with current flowing in the film surface direction
(Current in Plane) configuration.

FIG. 21 is a schematic front view of a main part of a shielded magnetoresistive head using the MR element unit 5 of SV type GMR having a CIP structure as a magnetic sensing part.
Shows a plan view from the line AA. In this magnetic head, a lower gap layer 7 made of a non-magnetic layer having a required thickness is formed on a lower magnetic shield 6, and a lower gap layer 7 is formed on the lower magnetic shield 6 from a front surface S of the magnetic head as shown in FIG. The MR element portion 5 is formed at a position retracted by the distance D, and a front magnetic flux guide 8 and a rear magnetic flux guide 9 are magnetically coupled to the front and rear of the MR element portion 5 respectively. The front end of the front magnetic flux guide 8 is formed facing the front surface S.

The magnetic sensing layer (the free magnetic layer 4 in the example of FIG. 20) and the magnetic flux guide of the MR element 5 and the magnetic flux guides 8 and 9 on the front and rear sides thereof are provided on both sides thereof. At 8 and 9, a hard magnetic layer 10 for applying a stabilizing bias magnetic field is arranged.

[0007] A non-magnetic insulating layer 11 is disposed therearound. A pair of electrodes 12a and 12b for supplying a sense current Is to the magnetic sensing layer of the MR element section 5 are formed thereon. An upper gap layer 13 made of a non-magnetic layer is entirely formed on the upper gap layer 13 buried with the layer 11, and an upper magnetic shield 14 is formed on the upper gap layer 13.

In a configuration in which at least one of the magnetic flux guides 8 and 9 is coupled to at least the magnetic sensing layer of the MR element section 5, the magnetic flux guides 8 and 9 are initially placed, that is, in a state where no external detection magnetic field is applied. 9 and MR
A required stabilizing bias is applied to the above-described free magnetic layer 4 of the magnetic sensing layer of the element section 5 by the hard magnetic layer 10 that has been subjected to the required magnetization. In this way, the magnetic flux guides 8, 9 and the magnetic sensing layer, ie, the free magnetic layer 4, of the MR element section 5 are arranged in the initial direction, that is, in the state where no external detection magnetic field is applied, along the film surface direction and in the detection external magnetic field. Magnetized in the same direction orthogonal to the introduction direction of
The efficiency of the magnetoresistive effect is increased, and the magnetic flux guide and the magnetic sensing layer are made into a single magnetic domain to avoid the generation of a magnetic domain at the periphery thereof, thereby reducing Barkhausen noise.

In this case, the index of stabilization is based on the remaining amount of the hard magnetic layer.
Demagnetization Mr_HAnd the film thickness t_H(Mr_H・ T_H)When,
This sets the magnetization, for example, a magnetic flux guide,
Alternatively, the product of the residual magnetization Mr of the magnetic sensing layer and the film thickness t (M
rt) (Mr_H・ T _H/ Mr · t)
Used as permanent magnet strength.

For example, this ratio (Mr _H · t _H / Mr · t)
Is small in the magnetic sensing layer of the MR element, stable operation is not performed, and Barkhausen noise increases. However, on the other hand, this ratio (Mr _H · t _H / Mr · t)
However, if it becomes excessive, the rotation of the magnetization in the magnetic sensing layer due to the externally detected magnetic field becomes difficult to occur, and the sensitivity of the element is reduced.

Therefore, in order to exhibit high sensitivity, achieve the required stabilization, and reduce Barkhausen noise, it is necessary to set the normalized permanent magnet strength to an appropriate value. This value is preferably, for example, 3 to 6 in JP-A-11-12631. On the other hand, it is considered that high sensitivity and high stability can be simultaneously satisfied in the magnetic flux guide by setting the normalized permanent magnet strength.

[0012]

However, in practice, the magnetic sensing layer and the magnetic flux guide generally have different thicknesses. In this case, the magnetic sensing layer and the magnetic flux guide have different thicknesses.
Since the normalized permanent magnet strength of the magnetic flux guide is different from that of the magnetic flux guide, it is extremely difficult to achieve high sensitivity and high stability for both the magnetic sensing layer and the magnetic flux guide with the same hard magnetic layer.

Even when the material and the film thickness of the magnetic sensing layer and the magnetic flux guide are the same, for example, when forming a magnetic head, the magnetic sensing portion, that is, the MR
The element is placed between the opposing magnetic shields, that is, the upper magnetic shield 14 and the lower magnetic shield 6 in FIG.
A so-called magnetic shield configuration, in which a signal magnetic field to be introduced from the magnetic recording medium to be introduced into this MR element is restricted to a narrow range to avoid introducing an unnecessary external magnetic field and perform signal reading with high resolution. If you do,
When the distances between the two shields, the magnetic sensing layer, and the magnetic flux guide are different, the optimum normalized permanent magnet strength is different.

As described above, the application of the stabilizing bias magnetic field to the magnetic flux guide and the magnetic sensing layer of the MR element is performed by the conventional structure having the hard magnetic layers arranged on both sides of the magnetic flux guide and the MR element. A stronger magnetic field is applied to both side edges of the magnetic flux guide and the hard magnetic layer of the magnetic sensing layer which are in contact with or in proximity to the hard magnetic layer as compared with the central portion.
For this reason, the magnetization is fixed at both side edges, and a rotation of the magnetization is not caused by the externally detected magnetic field.

[0015] For example, in a TMR element, the element resistance is large in the direction of current flow across the tunnel barrier layer. Because of this, Johnson noise and shot noise
Noise components such as noise increase, and high-speed transfer performance by a low-pass filter generated when the element is incorporated in a circuit is impaired. In order to reduce the element resistance, the area must be increased. In this case, however, the width of the detection area of the externally detected magnetic field increases as the width increases. For this reason, the detection resolution is reduced, and, for example, in a magnetic head, the track width becomes large, which hinders an increase in recording density. Therefore, it is desired to increase the width of the TMR element portion and reduce the width of the front end of the front magnetic flux guide that defines the track width.

On the other hand, the SV-type GMR element having a current-perpendicular-to-plane (CPP) configuration in which a sense current flows in the film thickness direction has a problem that the output voltage is small because the element resistance is small. The width of the portion is selected to be small. In this case, it is desired to increase the track width of the magnetic flux guide, as opposed to in the TMR element.

However, when the magnetic flux guide and the element portion are formed in a complicated shape such as having different widths, it is extremely difficult to apply an optimum stabilizing bias by the hard magnetic layer over the entire area. .

An object of the present invention is to provide a method of manufacturing a magnetoresistive element and a magnetoresistive magnetic head having excellent sensitivity and stability while avoiding such inconveniences.

[0019]

That is, the present invention relates to a magnetoresistive (MR) element, for example, an MR element based on the anisotropic magnetoresistive effect, ie, an AMR element, or a spin-valve giant magnetoresistive element, ie, an SV type GMR. In an element or a tunnel type magnetoresistive element, that is, a TMR element, each MR element part constituting a so-called element body having a magnetic sensing layer for substantially sensing an externally detected magnetic field to be detected by these elements; And at least one of a front magnetic flux guide and a rear magnetic flux guide magnetically coupled to the motor.

In the MR element according to the present invention, the stabilized antiferromagnetic layer is directly provided on at least one of the magnetic sensing layer, the front magnetic flux guide and the rear magnetic flux guide of the MR element. Direct exchange with a stabilized antiferromagnetic layer in the absence of an externally detected magnetic field, as a configuration that is exchange-coupled to the substrate or exchange-coupled for a long distance via a non-magnetic spacer layer. The direction of the easy axis of at least one of the magnetic sensing layer, the front magnetic flux guide, and the rear magnetic flux guide of the MR element unit is set by coupling or long-distance exchange coupling.

Further, in the magnetoresistive head according to the present invention, the magnetic sensing portion has the above-described magnetoresistive (MR) element configuration according to the present invention.

In the method of manufacturing an MR element according to the present invention, a step of forming a constituent film of an MR element part including at least a magnetic sensing layer, and at least a front magnetic flux guide or a rear part magnetically coupled to the magnetic sensing part are provided. Forming at least one of a magnetic flux guide, a magnetic sensing layer of the MR element portion,
Forming a stabilized antiferromagnetic layer on at least one of the forward magnetic flux guide and the rear magnetic flux guide by direct exchange coupling or long-range exchange coupling via a nonmagnetic spacer layer. The MR element according to the present invention described above is manufactured by employing a magnetic layer and a magnetic field applying heat treatment step for setting the direction of magnetization of a film directly and / or long-distance exchange-coupled.

Further, in the method of manufacturing a magnetoresistive head according to the present invention, the magneto-sensitive part is manufactured by the above-described method of manufacturing an MR element according to the present invention.

As described above, in the configuration of the present invention,
An antiferromagnetic layer for setting the direction of magnetization is disposed on at least one of the magnetic sensing layer and the magnetic flux guide of the MR element. In this manner, exchange coupling with the antiferromagnetic layer is performed. In a state where the detection external magnetic field is not applied by the energy, the magnetization direction is set to at least one of the magnetic sensing layer and the magnetic flux guide of the MR element portion provided with the antiferromagnetic layer.

In this case, when the antiferromagnetic layer is to be subjected to long-distance exchange coupling with a nonmagnetic spacer layer interposed, the magnitude of the exchange coupling energy must be selected according to the material and thickness of the nonmagnetic spacer. As described above, the selection can be made such that the magnetization rotation can be freely and reliably performed with respect to the detected external magnetic field.

FIG. 19 shows the dependence of the exchange coupling energy on the thickness of the nonmagnetic spacer layer.
A magnetic layer of Fe, a non-magnetic spacer layer of Cu,
It is a plot of the measurement results of the exchange coupling energy when the thickness of the nonmagnetic spacer layer in the laminated structure with the antiferromagnetic layer made of PtMn is changed. It is a plot of the same measurement result of exchange coupling energy in the case of a layer.

As is apparent from FIG. 19, when the thickness of the nonmagnetic spacer layer is 0, that is, direct exchange coupling in which the magnetic layer and the antiferromagnetic layer are directly joined without any intervening nonmagnetic spacer layer. In this case, the exchange coupling energy is large. As described above, when a large exchange coupling energy is exhibited, and when the rotation of the magnetization of the magnetic layer due to the detected external magnetic field is impaired, the non-magnetic spacer layer is interposed and the thickness thereof is selected so that long-distance exchange coupling can be achieved. Since the energy can be selected with a high degree of freedom, the exchange coupling energy causes the magnetization of the magnetic flux guide and / or the magnetic sensing layer to be oriented in the above-described predetermined direction when no external magnetic field is applied. When a magnetic field orthogonal to the direction of the magnetization is externally applied, that is, when a detection external magnetic field is applied, the magnetization can be easily set to an optimal size so that rotation of the magnetization occurs. is there.

In the present specification, the term "orthogonal" ideally means orthogonal, but actually refers to an intersection which includes a substantially orthogonal meaning and has an orthogonal component as a main direction.

In the present invention, since this antiferromagnetic layer is disposed on the magnetic sensing layer of the MR element portion or the film surface of the magnetic flux guide, the antiferromagnetic layer is provided on the magnetic sensing layer of the MR element portion. The layers can be arranged over the entire area required by the flux guide. Therefore, these magnetic sensing layers,
It is possible to uniformly set a single magnetization state in a predetermined direction by exchange coupling energy over the entire area of the magnetic layer of the magnetic flux guide.

As described above, since a uniform magnetization state can be obtained, high sensitivity is exhibited over a wide area, the sensitivity distribution is flattened, the insensitive region at the end is reduced, and the single magnetic domain is formed. It is possible to effectively reduce Barkhausen noise.

[0031]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An MR element according to the present invention has an AMR
The MR head according to the present invention comprises a magneto-sensitive section using these elements, such as an element, an SV type GMR element and a TMR element.

FIGS. 1A, 1B and 1C show an MR according to the invention.
FIG. 3 shows a schematic plan view of an element 25, with an MR having a magnetic sensing layer.
As shown in FIG. 1A, the MR element 3
5, a front magnetic flux guide 8 is magnetically coupled to a magnetic flux introduction side, that is, a front side by the detected external magnetic field Hsig, and a rear magnetic flux guide 9 is magnetically coupled to an opposite magnetic flux derivation side. Alternatively, as shown in FIG. 1B, the front magnetic flux guide 8 is magnetically coupled only to the front side on the magnetic flux introduction side of the MR element unit 35 with the detected external magnetic field Hsig.
Alternatively, as shown in FIG. 1C, the rear magnetic flux guide 9 is arranged only on the rear side on the magnetic flux derivation side of the MR element unit 35 due to the detected external magnetic field Hsig. The MR element unit 35
For example, it is configured by an AMR configuration, an SV type GMR configuration, or a TMR configuration.

In the MR element 25 according to the present invention, a stabilizing bias antiferromagnetic layer is provided in each of the MR elements having the above-described structures, and the exchange coupling energy with the stabilizing bias antiferromagnetic layer is used. , MR element section 35 and magnetic flux guides 8 and 9
In the state where sig is not applied, a single magnetization state in the same direction as the direction crossing the magnetic field Hsig, ideally the direction orthogonal to the magnetic field Hsig (hereinafter referred to as the track width direction) is set. Alternatively, by arranging the conventional hard magnetic layers described in FIGS. 21 and 22 in combination, the MR element can be formed by the cooperation of the magnetic field of the hard magnetic layer and the exchange coupling energy of the antiferromagnetic layer for stabilizing bias. In the state where the detection external magnetic field Hsig is not applied, the unit 35 and the magnetic flux guides 8 and 9 are set to a single magnetization state in the same direction in the track width direction crossing the magnetic field Hsig.

That is, for example, in a configuration in which the front magnetic flux guide 8 and the rear magnetic flux guide 9 are coupled to the front and rear of the MR element unit 35 shown in FIG. 1A, FIG. 2A shows a schematic plan view thereof, and FIG. As shown in the schematic cross-sectional view, for example, the stabilizing bias resistive member which extends over the MR element portion 35 and the front and rear magnetic flux guides 8 and 9 before and after the MR device portion 35 and is directly exchange-coupled to them. The magnetic layer 21 is formed.

Alternatively, as shown in a schematic sectional view of FIG. 2B2, for example, a non-magnetic spacer layer 22 is coated on each of the MR element portion 35 and the front and rear magnetic flux guides 8 and 9 in front and behind thereof. The stabilizing bias antiferromagnetic layer 21 is formed thereon. That is, M
The anti-ferromagnetic layer 21 for stabilizing bias is formed on the R element portion 35 and on the front and rear magnetic flux guides 8 and 9 before and after the R element portion 35 for a long distance.

In this manner, the direct or long-distance exchange coupling with the anti-ferromagnetic layer 21 for stabilizing bias allows M
The magnetization of the magnetic sensing layer of the R element section 35 and the front and rear magnetic flux guides 8 and 9 are set in the same direction in the track width direction as described above.

In the example shown in FIG. 2B2, the thickness of the nonmagnetic spacer layer 22 is made uniform, but the thickness is changed, for example, to the magnetic sensing layer of the MR element 35, the front magnetic flux guide 8, and the rear. By changing the magnetic flux guide 9, the exchange coupling energy can be changed as described with reference to FIG. 19, and an optimum stabilizing bias can be applied to each part.

Similarly, the MR element 25 according to the present invention has a configuration in which the front magnetic flux guide 8 and the rear magnetic flux guide 9 are coupled to the front and rear of the MR element section 35 shown in FIG. 1A, for example. FIG. 3B1 shows a schematic plan view thereof, and FIG. 3B1 shows a schematic sectional view thereof. As shown in FIG. The magnetic layer 21 is provided by exchange coupling, or an antiferromagnetic layer 21 for stabilizing bias that is exchange-coupled over a long distance via a nonmagnetic spacer layer 22 is provided as shown in a schematic sectional view similar to FIG. 3B2. In this case, the front magnetic flux guide 8 and the rear magnetic flux guide 9 are magnetically coupled to both side edges thereof as in the related art, and the magnetized hard magnetic layer 10 is disposed. The magnetic flux guides 8 and 9 are formed by the cooperation of the stabilizing bias magnetic field from the hard magnetic layer 10 and the exchange coupling energy with the antiferromagnetic layer 21 for stabilizing bias described above.
The same magnetization state in the track width direction as described above is set for the magnetic sensing layer of the MR element section 35 and the magnetic sensing layer of the MR element section 35.

In the configuration shown in FIG. 3, the antiferromagnetic layer 21 for stabilizing bias is provided only on the MR element section 35. However, the MR element section 35 and one magnetic flux guide 8 9 for the stabilizing bias antiferromagnetic layer 2 by the direct exchange coupling or the long-distance exchange coupling described above.
1 and the hard magnetic layer 10 is disposed only on the other magnetic flux guide 9 or 8, and the same track as described above is used for the magnetic flux guides 8 and 9 and the magnetic sensing layer of the MR element section 35. It is also possible to set the magnetization state in the same direction in the width direction.

Further, as another example, as shown in FIG. 4A, a stabilizing magnetic field by the hard magnetic layer 10 is applied to the MR element section 35, and as shown in FIG. 4B1 or 4B2. By forming the above-mentioned antiferromagnetic layer 21 for stabilizing bias on the magnetic flux guides 8 and 9 directly or via the nonmagnetic spacer layer 22, the magnetic flux guides 8 and 9 and the magnetic sensing layer of the MR element section 35 are formed. However, it is also possible to set the same magnetization state in the track width direction as described above.

MR of MR element by AMR according to the present invention
As shown in a schematic cross-sectional view of FIG. 5, for example, the element portion 35 is a single layer of a magnetic sensing layer such as NiFe or NiC.
o, a configuration of the uniaxial anisotropic magnetoresistive layer 23 having a magnetoresistive effect made of NiFeCo. The stabilizing bias antiferromagnetic layer 21 is disposed on one surface of the MR element by direct exchange coupling or long-distance exchange coupling with a nonmagnetic spacer layer interposed.

The MR element section 35 of the SV type GMR element is, for example, a so-called bottom type SV GMR as shown in FIG.
As shown in a schematic cross-sectional view of an example of the MR element section 35, a base layer 16 is formed on a substrate 15, for example, and an antiferromagnetic layer 1 is fixed thereon. The magnetic layer 2, the non-magnetic layer 3, and the free magnetic layer 4 that constitutes a magnetic sensing layer whose magnetization direction changes by a detected external magnetic field are stacked. In this example, the anti-ferromagnetic bias for stabilizing bias is formed on the free magnetic layer 4 by long-distance exchange coupling via the non-magnetic spacer layer 22 or by direct exchange coupling without via the non-magnetic spacer 22. Layer 21 is deposited. In addition, a protective layer 24 is formed on the stabilizing bias antiferromagnetic layer 21.

FIG. 7 is a schematic cross-sectional view showing an example of a top type SV type GMR structure. In this case, a base layer 13 is formed on a substrate 12, and a stabilizing bias resistive layer is formed thereon. A magnetic layer 21 is formed, and a free magnetic layer 4 is formed thereon with or without a non-magnetic spacer layer 22.
, The nonmagnetic layer 3, the pinned magnetic layer 2, and the first antiferromagnetic layer 1 are laminated, and a protective layer 24 is formed thereon.

In these configurations, the direction of the easy axis of magnetization of the fixed magnetic layer 2 due to the exchange coupling between the antiferromagnetic layer 1 and the fixed magnetic layer 2 joined thereto, and the anti-ferromagnetic layer 21 for stabilizing bias are free. The direction of the easy axis of the free magnetic layer 4 due to the bias by the long-range exchange coupling magnetic field or the direct exchange coupling energy with the magnetic layer 4 is set to be orthogonal to the direction.

FIGS. 8 and 9 show schematic cross-sectional views of the MR element section 35 having the bottom type and top type TMR configurations, respectively. In this case, the configurations corresponding to those in FIGS. However, it has a configuration in which a tunnel barrier layer 3T is interposed instead of the nonmagnetic layer 3 in the SV type GMR. 8 and 9,
6 and 7 are denoted by the same reference numerals, and redundant description will be omitted.

Each of the MR element portions 3 shown in FIGS.
5, a detection external magnetic field is applied in a direction along the film surface. Further, M by the SV type GMR shown in FIGS.
In the R element section 35, when the CPP configuration is used, each layer is formed of a layer having conductivity, and a sense current Is is applied in a direction perpendicular to the film surface. The sense current Is is supplied in a direction crossing the direction in which the detected external magnetic field is introduced.

In the MR element section 35 of each SV type GMR, the fixed magnetic layer 2 and the free magnetic layer 4 have their easy axes of mutual mutual magnetization in a state where no magnetic field detected by the MR element section 35 is applied. The direction is set so as to be orthogonal to the axis of easy magnetization in the free magnetic layer 4 so as to be orthogonal to the direction in which the detection external magnetic field is introduced.

Then, as shown in FIG. 8 and FIG.
In the case of the IP configuration, the sense current Is is supplied in the surface direction of the SV type GMR element unit 35, and in the CPP configuration, the sense current Is is supplied in the direction perpendicular to the surface direction.

The SV type GMR shown in FIGS.
Alternatively, the substrate 15 in TMR is made of glass, ceramics, a semiconductor such as a silicon substrate having a silicon oxide film formed on the surface by thermal oxidation, a substrate having aluminum oxide and aluminum nitride formed on the surface, or a magnetic shield layer formed on the surface, for example. Alternatively, the magnetic shield / electrode layer may have various substrate configurations such as an AlTiC (AlTiC) substrate.

The underlayer 16 is provided to reduce the influence of contamination of the substrate 15 and to improve the crystal orientation of the film formed thereon.
The underlayer 16 is made of, for example, Ta, or Z, for example.
It can be composed of r, Ru, Cr, Cu or the like.

The antiferromagnetic layer 1 is made of PtMn, NiMn, P
dPtMn, Ir-Mn, Rh-Mn, Fe-Mn, N
It can be made of i-oxide, Co oxide, Fe oxide, or the like.

The pinned magnetic layer 2 can be composed of, for example, a single ferromagnetic layer.
a ferri-layered magnetic layer structure formed by laminating two or more ferromagnetic layers separated by antiferromagnetic exchange coupling films of r, Rh, Ir, or two or more of these alloys and having fixed magnetizations oriented antiparallel to each other; Is desirable for stability.

The ferromagnetic layer of the fixed magnetic layer 2 having a single or laminated structure may be, for example, a ferromagnetic layer of Co, Fe, Ni or an alloy of two or more thereof, or a combination of different compositions, for example, Fe and Cr. Ferromagnetic layer The ferromagnetic layer can be used.

The free magnetic layer 4 is made of, for example, a CoFe film, Ni
Fe film, CoFeB film, or a laminated film of these, such as CoFe / NiFe or CoFe / NiFe / Co
With the Fe configuration, a larger MR ratio and soft magnetic characteristics can be realized.

The nonmagnetic layer 3 and the nonmagnetic spacer layer 22 are made of, for example, Cu, Au, Ag, Pt, Cu--N
i, Cu-Ag.

Further, the anti-ferromagnetic layer for stabilizing bias 21
Is, for example, P as in the antiferromagnetic layer 1 described above.
tMn, NiMn, PdPtMn, Ir-Mn, Rh-
It can be composed of Mn, Fe-Mn, Ni oxide, Co oxide, Fe oxide or the like.

The protective layer 24 is for preventing oxidation and wear, and can be made of, for example, Ta, W, Zr, or the like.

At least one of the front magnetic flux guide 8 and the rear magnetic flux guide 9 described with reference to FIGS. 1 to 4 is magnetically coupled to the MR element 35 described with reference to FIGS. These magnetic flux guides are made of soft magnetic material such as CoF.
e film, NiFe film, CoFeB film, or a laminated film of these, such as CoFe / NiFe or CoFe / Ni
Fe / CoFe, or Co-Al-O, or Fe
-It can be made of a high magnetic permeability granular material such as Al-O.

In the example shown in FIGS. 1 to 4, the MR element 3
5 and the widths of the magnetic flux guides 8 and 9 are the same. For example, as illustrated in the plan views of FIGS. 10A to 10F and FIGS. The guides 8 and 9 may have a shape in which at least one of the widths is different.

In the example of FIGS. 10A to 10F, as described above, since the resistance of the element portion 35 is small, for example, in a TMR element, the area of the element portion 35 is increased to reduce the resistance. However, at the forward end of the introduction of the detected external magnetic field, the forward magnetic flux guide 8 is connected to the MR element section 35.
In this case, the recording area can be narrower in the track width direction to narrow the detection range of the detected external magnetic field, thereby increasing the detection resolution or reducing the track width to increase the recording density.

The examples shown in FIGS. 10A to 10C are examples in which the rear magnetic flux guide is not formed, and FIGS. DF show the case in which the front and rear magnetic flux guides 8 and 9 are provided. The pattern of the magnetic flux guide 9 is narrowed at least at the end, and this narrow shape may be gradually narrowed toward the end, stepwise narrowed, or as shown in FIG. As shown in F, the width of the front magnetic flux guide 8 at the portion where the front magnetic flux guide 8 is connected to the MR element portion 35 can be different from each other.

In the example shown in FIGS. 11A to 11F, FIG.
Conversely, when the resistance in the MR element section 35 is too low, for example, in the above-described CPP type SV GMR, the width of the MR element is reduced to reduce the area of the MR element, and To avoid the decline,
This is a case where the width of the front magnetic flux guide 8 is wider than that of the MR element section 35. Also in this case, the shape of the magnetic flux guide 8 may be widened gradually toward the tip or narrowed stepwise, or as shown in FIGS. In the coupling portion with the MR element portion 35, the widths of the two can be mismatched.

In each of the shapes of FIGS. 10 and 11, the stabilizing bias antiferromagnetic layer 21 is
The anti-ferromagnetic layer 21 for stabilizing bias is formed on the element portion 35 and the magnetic flux guide (the front magnetic flux guide 8 in the illustrated example) having a different width.

Next, an embodiment in which the configuration shown in FIG. 2B2 is used and the MR element section 35 is an SV type GMR will be described. [Embodiment 1] In this embodiment, the SV type GMR element section 35 of the bottom type configuration shown in FIG. 6 is used. In this embodiment, a silicon substrate 15 on which an oxide film is formed is used.
On the base layer 16, a 3 nm-thick Ta base layer and a 20-nth-thick layer were sequentially formed by a vacuum magnetron sputtering apparatus.
m of PtMn, CoFe with a thickness of 1.5 nm / Ru with a thickness of 0.8 nm / CoF with a thickness of 2 nm
e, a pinned magnetic layer 2 having a laminated ferrimagnetic structure, and a thickness of 2.9.
non-magnetic layer 3 made of Cu having a thickness of 2 nm and CoFe having a thickness of 2 nm
/ Free magnetic layer 4 having a laminated structure of 3.8 nm thick NiFe
Were formed to form the MR element section 35.

Similarly, the magnetic flux guides 8 and 9 of CoFe / NiFe are formed by a vacuum magnetron sputtering apparatus, and the magnetic flux guides 8 and 9 and the MR element portion 35 are spread over the magnetic flux guides 8 and 9 to a thickness of 2 nm.
Of a nonmagnetic spacer layer 22 of Cu, a stabilizing antiferromagnetic layer 21 of PtMn with a thickness of 20 nm, and a protective layer 24 of Ta with a thickness of 3 nm.

FIG. 12 relates to the MR element portion on which the antiferromagnetic layer for stabilizing bias is formed in the configuration of the first embodiment, that is, the diameter of the MR element portion excluding the magnetic flux guides 8 and 9.
It shows the measurement results of the relative output and the relative hysteresis area for the MR element portion at 3 μm to 4 μm.
In FIG. 12, the circles indicate the experimental results for the MR element portion having this configuration, and the black circles indicate the MR elements with the same configuration, but without the antiferromagnetic layer for stabilizing bias or with the biased MR element. The experimental results are shown.

That is, the effect of stabilization by long-distance exchange coupling is confirmed by comparing the two elements.
In FIG. 12, the relative hysteresis area on the horizontal axis indicates the MR curve when the magnetic field H is increased and the MR curve when the magnetic field H is increased in the measurement of the MR ratio and the MR-H curve of the externally applied magnetic field H. Is the area of the area between the curves
The larger the Barkhausen noise, the larger the relative hysteresis area. The relative hysteresis area is an integral of -400 to 400 [Oe] when an MR ratio (MRforward) when the magnetic field H is increased and an MR ratio (MRreverse) when the magnetic field H is decreased, Σ | (MRforward (i) −MRreverse (i)) | × (|
H _i −H _{i + 1} |). The absolute value of the hysteresis area on the horizontal axis has no quantitative significance, because the size of the hysteresis area differs depending on the integration range. The calculation of the hysteresis area was simply performed by integrating the output voltage values V and H. However, even in this calculation method, as described above, the relative hysteresis area increases as the Barkhausen noise increases, and can be used as an index indicating the magnitude of the noise.

As described above, in this case, since the element size (area S) is changed from 0.3 μm to 4.0 μm in diameter, even in the case of the same SV type GMR structure, the output V depends on the element size. ∝Resistance R∝1 / S, and the output voltage changes.

From the above results, it can be seen that the formation of the antiferromagnetic layer for stabilizing bias by long-distance exchange coupling in the free magnetic layer 4 reduces the extremely large hysteresis area normally observed. . 13 and 14 show the same SV-type GMR element having a stabilizing bias antiferromagnetic layer provided by long-distance exchange coupling having a diameter of 0.4 μm, and a stabilizing bias antiferromagnetic layer. Typical normalized MR with SV type GMR element when not provided
The curves are shown.

From this, it can be seen that the device provided with the antiferromagnetic layer for stabilizing bias by long-distance exchange coupling has excellent MR characteristics. That is, in the case where the antiferromagnetic layer for stabilizing bias is not provided by the conventional long-distance exchange coupling, Barkhausen noise which is considered to be caused by the formation, movement and disappearance of the rotating magnetic domain by the current magnetic field is observed. On the other hand, in the device provided with the antiferromagnetic layer for stabilizing bias by long-distance exchange coupling, the stabilizing bias is applied to the entire device by providing the antiferromagnetic layer for stabilizing bias over the entire device. Therefore, the above-mentioned rotating magnetic domain is hardly formed, and a single magnetic domain is formed, so that an MR waveform with reduced Barkhausen noise and excellent linear response can be obtained.

In the above-described embodiment, the anti-ferromagnetic layer for stabilizing bias 21 is made of PtMn. Is generated, so that a spin filter type S having a specular structure is formed.
A V-shaped GMR can be configured.

Next, a method of manufacturing an MR element according to the present invention will be described for the case where the MR element section 35 is a bottom type SV type GMR. In this case, the underlayer 1 is formed on the substrate 15.
6, a material layer constituting the antiferromagnetic layer 1, and a pinned magnetic layer 2
And a non-magnetic layer 3, a free magnetic layer 4, a non-magnetic spacer layer 22, a material layer forming a stabilizing bias antiferromagnetic layer 21, and a protective layer 24 to form a laminated structure. I do.

In this case, for example, the magnetic flux guides 8 and 9 can be formed simultaneously with the formation of the free magnetic layer 4, for example. These films can be formed by, for example, a high vacuum magnetron sputtering apparatus using a sputtering gas of Ar, Ne, Xe, Kr, or a mixed gas of two or more of these. However, the formation of these layers is not
D (Ion Beam Deposition), MBE (Molecular Beam)
Epitaxy: molecular beam epitaxy), various deposition techniques such as vacuum deposition.

Thereafter, a first heat treatment for determining the magnetic anisotropy of the fixed magnetic layer 2, that is, the direction of the axis of easy magnetization, and a second heat treatment step for re-inducing the magnetic anisotropy of the free magnetic layer 4, I do. FIGS. 15A and 15B show these first and second
15A and 15B, for easy understanding, the fixed magnetic layer 2 and the free magnetic layer 4 of the laminated structure are juxtaposed for convenience.
The first and second heat treatments are performed under the application of magnetic fields Hex1 and Hex2, respectively, along the film surface and orthogonal to each other.

The anti-ferromagnetic layer 1 is formed by the first heat treatment.
And 21 are determined, and the magnetization of the fixed magnetic layer 2 is fixed. That is, according to the first heat treatment, magnetization (arrow M ₄ of the magnetization (indicated by a dotted arrow M ₂₎ and a free magnetic layer 4 once fixed magnetic layer 2 by heating under application of a magnetic field Hex1 shown in FIG. 15A Shown) is the applied magnetic field Hex1
The pinned magnetic layer 2 that is strongly exchange-coupled to the first antiferromagnetic layer 1 with the decrease in the temperature after the processing is
As shown by the solid line arrows M _2, inverted, it is fixed to this orientation.

The applied magnetic field Hex1 in the first heat treatment
In the case where the fixed magnetic layer 2 has a laminated ferri structure, a high magnetic field of, for example, 10 k [Oe] is selected.
e]. Further, the heating temperature in the first heat treatment may be, for example, 265 ° C., and the holding time may be 4 hours.

In the first heat treatment, for example, the constituent material of the antiferromagnetic layers 1 and 21 has a disordered phase such as PtMn and has no irregularity in the as-deposited state and does not exhibit antiferromagnetism. In the case of a system antiferromagnet, the irregular phase can be transformed into an ordered phase by the first heat treatment to exhibit antiferromagnetism.

Next, as shown in FIG. 15B, a second heat treatment is performed under the application of a magnetic field Hex2 orthogonal to the applied magnetic field Hex1 in the first heat treatment. The second heat treatment is selected at a low temperature at which the anisotropy of the fixed magnetic layer 2 is not dispersed by the heat treatment. This second
The applied magnetic field in the heat treatment is also sufficiently lower than the applied magnetic field Hex1 in the first heat treatment.
Select 1000 [Oe]. In this way, the second heat treatment, the free magnetic layer 4 and the magnetic flux guide 8 and 9, the magnetic anisotropy, and the direction perpendicular to that of the fixed magnetic layer 2, showing the magnetization directions by the arrows M ₂ As described above, the magnetic field is guided in the direction along the magnetic field Hex2.

As described above, in the manufacturing method of the present invention, the first and second magnetic field applying heat treatments are performed.
It has high heat resistance because it has an effect of suppressing the diffusion of, for example, Mn element contained in the antiferromagnetic layer 1 of FIG. From this, it can be avoided that the characteristics are deteriorated by at least the first and second high-temperature heat treatments described above.

The laminated ferrimagnetic layer structure is composed of two ferromagnetic layers arranged antiparallel to each other, and has a very strong antiparallel coupling between them, such as 0.8 nm thick Ru. Because of the configuration in which the coupling film is interposed, the magnetization is not easily rotated with respect to the external magnetic field. Therefore, in the above-described second magnetic field applying heat treatment, the application of the magnetic field in the first magnetic field applying heat treatment is performed. When a magnetic field perpendicular to the direction is applied, the fixed magnetic layer 2
The easy axis of free magnetic layer 4 alone can be easily rotated without rotating the easy axis of magnetization.

The MR type magnetic head according to the present invention comprises the above-described MR element 25 according to the present invention as a magnetic sensing portion. One example is shown in FIG. 16 and FIG.
This will be described with reference to FIG. FIG. 16 is a schematic front view thereof, and FIG.
Shows a schematic plan view from the line AA. In this example,
It has the configuration shown in FIG. 2 and has a CIP configuration, that is, A
In the case where the MR element 25 of MR or SV GMR is used as the magnetic sensing part, it can be of SV GMR of CPP configuration or MR of TMR. Further, the magnetic flux guide may have a configuration in which only one of the front magnetic flux guide 8 and the rear magnetic flux guide 9 shown in FIG. 1B or C is provided, or as described with reference to FIGS. It goes without saying that the present invention is not limited to this example, for example, a combination structure of a magnetic layer and a hard magnetic layer can be adopted.

In this magnetic head, a lower gap 7 made of a nonmagnetic layer having a required thickness is formed on a lower magnetic shield 6, and a lower gap 7 is formed thereon as shown in FIG.
An MR element portion 35 is formed at a position retracted by a predetermined distance D from the front surface S of the magnetic head.
A front magnetic flux guide 8 and a rear magnetic flux guide 9 are magnetically coupled to the front and rear sides of the magnetic flux guide, respectively. The front end of the front magnetic flux guide 8 is formed facing the front surface S. The front surface S is a sliding contact surface with the magnetic recording medium.
Alternatively, for example, in the case of a magnetic head configuration in which the air flow generated by rotation of a disk-shaped magnetic recording medium flies by a so-called air bearing, the air bearing surface is used.

Then, the anti-ferromagnetic layer 21 for stabilizing bias shown by B1 or B2 in FIG. 2 is formed over the MR element portion 35 and the magnetic flux guides 8 and 9 in front and behind the MR element portion 35. A required stabilizing bias is applied to the element section 35 and the magnetic flux guides 8 and 9 in front and behind the element section 35.

Then, a non-magnetic insulating layer 11 is disposed therearound, and a pair of electrodes 12a and 12b for supplying a sense current Is to the magnetic sensing layer of the MR element section 5 are formed thereon. An upper gap layer 13 made of a non-magnetic layer is entirely formed on the upper gap layer 13 buried with the layer 11, and an upper magnetic shield 14 is formed on the upper gap layer 13.

In this configuration, the magnetization of the magnetic flux guides 8 and 9 is controlled by the anti-ferromagnetic layer 21 for stabilizing bias.
The magnetization of the magnetic sensing layer of the MR element section 35, in this example, the free magnetic layer (not shown) is along the film surface direction and perpendicular to the direction of introduction of the detected external magnetic field when no external detected magnetic field is applied. The orientation is the same.

In this case, as described above, for example, as a long-distance exchange coupling configuration in which the nonmagnetic spacer layer 22 is interposed, the exchange coupling energy is set to, for example,
By arbitrarily selecting the magnetic flux guides 8 and 9, an optimized stabilizing bias can be applied to each.

In this magnetic head, the MR element 35
Is prevented from being directly exposed on the front surface S, thereby avoiding mechanical wear of the MR element section 35. Further, for example, the characteristic deterioration of the MR element section 35 due to sliding heat,
Thermal destruction and the like can be avoided. In addition, since the rear magnetic flux guide 9 is provided, the magnetic flux is effectively passed through the magnetic flux guide 9 so that the magnetic flux can be effectively prevented from being dispersed to the upper and lower magnetic shields. The signal magnetic field by the information recorded from the magnetic recording medium is effectively
Since the light can pass through the R element section 35 in the entire depth direction, the MR efficiency can be increased. However, a magnetic head configuration having a structure in which one of the magnetic flux guides 8 or 9 is eliminated may be employed depending on the purpose and mode of use.

In the magnetic head structure described above, the CIP structure is used. However, the CPP structure may be used.
And 12b, the upper and lower magnetic shields 6 and 14 are used as conductive magnetic shields and electrodes, and the upper and lower gap layers are made of a conductive material such as Cu, so that a sense current can flow between the two magnetic shields 6 and 14. Can be energized.

Further, by using the MR type magnetic head according to the present invention, that is, the reproducing magnetic head, for example, as shown in a schematic perspective view in FIG. It can also be configured. In this example, a recording head is integrated with the reproducing magnetic head having the configuration described with reference to FIG. 18, parts corresponding to those in FIGS. 16 and 17 are denoted by the same reference numerals, and redundant description is omitted.

In this example, on the upper shield 14, on the front surface S side, SiO ₂ , Al ₂ constituting the magnetic gap in the electromagnetic induction type recording head 42.
A nonmagnetic layer 43 made of O ₃ or the like is formed, and a coil 44 formed of a conductive layer is formed thereon. On the non-magnetic layer 43, a magnetic core 45 of a magnetic layer is formed with its front end facing the front surface S, and its rear side is
The magnetic shield 14 is magnetically coupled to the magnetic shield 14 through a through hole formed in the nonmagnetic layer 43 and through the center of the coil 44. Thus, the nonmagnetic layer 4 is formed on the front surface.
3, a magnetic core 45 and an inductive recording magnetic head 42 in which a closed magnetic path is formed by the magnetic shield 14 constitute a recording / reproducing magnetic head integrally formed with a SV-type GMR magnetic head. You.

As described above, in the present invention, in the magnetoresistive effect element or the magnetoresistive magnetic head using the same, the MR element portion 35, the front magnetic flux guide 8, the rear magnetic flux guide 9, or any one of them. By providing one or more stabilizing bias antiferromagnetic layers 21, the degree of freedom in selecting each stabilizing bias can be increased.

That is, for example, by forming a stabilizing bias antiferromagnetic layer on both the magnetic sensing layer of the MR element section 35 and the magnetic flux guide magnetically coupled to the magnetic sensing layer, this stabilizing bias A necessary and sufficient stabilizing bias can be applied to each of the antiferromagnetic layers by direct exchange coupling or by selecting the thickness of the nonmagnetic spacer layer 22 in long-distance exchange coupling. Also, in this case, by disposing an antiferromagnetic layer for stabilizing bias on the entire surface of each magnetic sensing layer and magnetic flux guide, the hard magnetic layer is arranged on both sides of these magnetic sensing layers and magnetic flux guide to stabilize the bias. The required magnetization state can be formed uniformly over the entire surface as compared with the case where the magnetic field is given, so that a single magnetic domain can be surely formed. For example, a required magnetoresistance effect occurs in the magnetic sensing layer. The operation region can be formed in almost the entire region and with high sensitivity. Therefore, in the MR element and the MR type magnetic head, high sensitivity, high stability, and reduction of noise can be achieved.

Further, by disposing the antiferromagnetic layer for biasing in this way, the hard magnetic layer can be completely eliminated, so that the structure can be simplified and the size can be reduced. By using the magnetic layers in combination, it is possible to obtain the optimum stabilizing bias state for each magnetic sensing layer and magnetic flux guide.

As described with reference to FIGS. 10 and 11, when the width of the MR element portion 35 and the magnetic flux guide are different from each other, the MR element portion and the magnetic flux guide are different from each other as in the related art. It is extremely difficult to apply the optimum stabilizing bias to each part only by the hard magnetic layer,
A stabilizing bias can be appropriately applied to a portion where the width does not match at the coupling portion with the element portion 35 regardless of the width or length.

Incidentally, the MR element and the MR type magnetic head according to the present invention are not limited to the above-described structures.
Various modifications and changes can be made within the scope of the present invention,
In addition, various modifications can be made to the manufacturing method of the present invention within the scope of the present invention.

[0096]

As described above, in the present invention, a stabilizing bias antiferromagnetic layer is provided on all or at least one of the magnetic sensing layer and the magnetic flux guide in the element portion of the magnetoresistive element. Depending on the direct exchange coupling of the antiferromagnetic layer for stabilizing bias or the thickness of the non-magnetic spacer layer in long-distance exchange coupling, the difference between the width of the magnetoresistive element and the magnetic flux guide is affected. However, it is possible to provide a necessary and sufficient stabilizing bias.

Further, by disposing a stabilizing bias antiferromagnetic layer on the entire surface of the magnetic sensing layer and the magnetic flux guide, a hard magnetic layer is arranged on both sides of the magnetic sensing layer and the magnetic flux guide to apply a stabilizing bias. As compared with the case, the required magnetization state can be formed uniformly over the entire surface,
A single magnetic domain can be surely achieved. For example, in a magnetic sensing layer, an operation region in which a required magnetoresistance effect is generated can be formed in almost the entire region and with high sensitivity. Therefore, in the MR element and the MR type magnetic head, high sensitivity, high stability, and reduction of noise can be achieved.

Further, since the hard magnetic layer can be completely eliminated, the structure can be simplified and the size can be reduced. Alternatively, by using a combination of a stabilizing bias antiferromagnetic layer and a hard magnetic layer, an optimum stabilizing bias state can be obtained for each magnetic sensing layer and magnetic flux guide.

As described above, according to the present invention, by arranging the anti-ferromagnetic layer for stabilizing bias on the MR element or the magnetic flux guide, it can be provided over the entire area irrespective of its width and length. Since a substantially uniform stabilizing bias can be applied to the MR type magnetic head according to the present invention, even when a magnetic head having a relatively wide track width in a reproducing head of a magnetic tape, for example, can be stably formed,
A highly sensitive magnetic head can be configured.

Further, according to the manufacturing method of the present invention, a target stabilizing bias can be reliably applied by performing the magnetic field application heat treatment twice.

[Brief description of the drawings]

1A to 1C are schematic plan views of examples of a basic configuration of a magnetoresistive element according to the present invention.

FIG. 2A is a plan view of an example of a magnetoresistance effect element according to the present invention. B1 and B2 are schematic sectional views of respective examples of the magnetoresistive element according to the present invention.

FIG. 3A is a plan view of an example of the magnetoresistance effect element according to the present invention. B1 and B2 are schematic sectional views of respective examples of the magnetoresistive element according to the present invention.

FIG. 4A is a plan view of an example of the magnetoresistance effect element according to the present invention. B1 and B2 are schematic sectional views of respective examples of the magnetoresistive element according to the present invention.

FIG. 5 is an MR diagram of a magnetic sensing layer of an MR element according to the invention.
It is a schematic sectional drawing of an example of an element part.

FIG. 6 shows M having a magnetic sensing layer of an MR element according to the present invention.
FIG. 4 is a schematic sectional view of an example of an R element section.

FIG. 7 shows an M element having a magnetic sensing layer of an MR element according to the present invention;
FIG. 4 is a schematic sectional view of an example of an R element section.

FIG. 8 shows M having a magnetic sensing layer of an MR element according to the present invention.
It is a schematic sectional drawing of another example of an R element part.

FIG. 9 shows M having a magnetic sensing layer of an MR element according to the present invention.
It is a schematic sectional drawing of another example of an R element part.

FIGS. 10A to 10F are schematic plan views of respective examples of an MR element according to the present invention.

11A to 11F are schematic plan views of respective examples of the MR element according to the present invention.

FIG. 12 is a graph showing the relative output voltage and relative hysteresis of the MR element for explaining the effect of the anti-ferromagnetic layer for stabilizing bias.
It is a figure showing the relation of an area.

FIG. 13 is an MR characteristic curve of an MR element having an antiferromagnetic layer for stabilizing bias.

FIG. 14 is an MR characteristic curve of an MR element portion without an antiferromagnetic layer for stabilizing bias.

FIGS. 15A and 15B are diagrams showing magnetization states for explaining the manufacturing method of the present invention. FIGS.

FIG. 16 is a schematic front view of an example of a magnetoresistive head according to the present invention.

FIG. 17 is a schematic plan view taken along line AA of FIG. 16;

FIG. 18 is a schematic perspective view of an example of a recording / reproducing magnetic head according to the present invention.

FIG. 19 is a diagram showing the dependence of the exchange coupling energy between the antiferromagnetic layer and the free magnetic layer on the thickness of the non-magnetic spacer layer for the description of the present invention.

FIG. 20 is a schematic sectional view of a conventional MR element.

FIG. 21 is a schematic front view of a conventional magnetic head.

FIG. 22 is a schematic plan view taken along line AA of FIG. 21.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Antiferromagnetic layer, 2 ... Pinned magnetic layer, 3 ... Nonmagnetic layer, 3T ... Tunnel barrier layer, 4 ... Free magnetic layer, 5 ... MR element part, 6 ... lower magnetic shield, 7 ... lower gap layer, 8 ... front magnetic flux guide, 9 ... rear magnetic flux guide, 10 ... hard magnetic layer, 1
1 ... insulating layer, 12a, 12b ... electrode, 13 ...
-Upper gap layer, 14 ... upper magnetic shield, 15
... Substrate, 16 ... Underlayer, 21 ... Stabilizing bias antiferromagnetic layer, 22 ... Nonmagnetic spacer layer, 23
... anisotropic magnetoresistive layer, 24 ... protective layer, 25 ...
.MR element, 35 ... MR element part

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 43/12 G01R 33/06 R

Claims (16)

[Claims] 1. A magnetoresistive element in which at least one of a front magnetic flux guide and a rear magnetic flux guide magnetically coupled is provided on a magnetic sensing layer of a magnetoresistive effect element section, An antiferromagnetic layer for stabilizing bias is directly exchange-coupled to a film surface of at least one of the magnetic sensing layer of the element portion, the front magnetic flux guide, and the rear magnetic guide, or a nonmagnetic spacer A magnetic sensing layer of the magnetoresistive element, a forward magnetic flux guide, and a direct exchange coupling or a long distance exchange coupling with the stabilizing antiferromagnetic layer. Or the direction of the axis of easy magnetization of at least one of the rear magnetic flux guide is set. 2. An antiferromagnetic layer for stabilizing bias, which is directly exchange-coupled or long-distance exchange-coupled to the magnetoresistance effect element, the front magnetic flux guide, and the rear magnetic flux guide,
By cooperating with the magnetic field by the magnetized hard magnetic layer,
2. The magnetoresistive element according to claim 1, wherein the direction of the easy axis is set. 3. A hard magnetic material in which the magnetoresistance effect element, the front magnetic flux guide, and the rear magnetic flux guide, on which the stabilized antiferromagnetic layer is not disposed by the direct exchange coupling or the long-distance exchange coupling, is magnetized. 2. The magnetoresistive element according to claim 1, wherein the direction of the axis of easy magnetization is set by applying a magnetic field from the layer. 4. A width of the magneto-resistance effect element portion and a width of at least one of the front magnetic flux guide and the rear magnetic flux guide, and the magneto-resistance effect element portion and the magnetic flux guide having different widths are different from each other. 2. The magnetoresistance effect element according to claim 1, wherein said stabilized antiferromagnetic layer which is directly exchange-coupled or long-distance exchange-coupled is arranged. 5. The magnetoresistive element according to claim 1, wherein said magnetoresistive element has a magnetic sensing layer of an anisotropic magnetoresistive layer. 6. The magnetoresistive element according to claim 1, wherein said magnetoresistive element is a spin valve type giant magnetoresistive element. 7. The magnetoresistance effect element according to claim 1, wherein said magnetoresistance effect element is a tunnel type magnetoresistance effect element. 8. A magneto-sensitive section, wherein at least one of a front magnetic flux guide and a rear magnetic flux guide magnetically coupled is provided on a magnetoresistive element section and a magnetic sensing layer of the magnetoresistive element section. A magnetoresistive effect type magnetic head comprising: a magnetic sensing layer of the magnetoresistive effect element, wherein at least one of a front magnetic flux guide or a rear magnetic flux guide magnetically coupled is provided. Wherein a stabilized antiferromagnetic layer is directly exchange-coupled to at least one of the film surfaces of the magnetic sensing layer, the front magnetic flux guide, and the rear magnetic flux guide of the magnetoresistive element. A long-distance exchange coupling via a non-magnetic spacer layer, and the above-described one by direct exchange coupling or long-distance exchange coupling with the stabilized antiferromagnetic layer. A magnetoresistive magnetic head, wherein the direction of the axis of easy magnetization of at least one of the magnetic sensing layer of the magnetoresistive element, the front magnetic flux guide, and the rear magnetic flux guide is set. 9. A stabilizing bias antiferromagnetic layer which is directly exchange-coupled or long-distance exchange-coupled to the magnetoresistance effect element, the front magnetic flux guide, and the rear magnetic flux guide,
By cooperating with the magnetic field by the magnetized hard magnetic layer,
9. The magnetoresistive head according to claim 8, wherein the direction of the axis of easy magnetization is set. 10. A hard magnetic material in which magnetization is performed with respect to the magnetoresistive element, the front magnetic flux guide, and the rear magnetic flux guide in which the stabilized antiferromagnetic layer is not disposed by the direct exchange coupling or the long-distance exchange coupling. 9. The magnetoresistive head according to claim 8, wherein the direction of the axis of easy magnetization is set by applying a magnetic field from the layer. 11. A width of the magnetoresistive effect element portion and a width of at least one of the front magnetic flux guide and the rear magnetic flux guide, and the magnetoresistive effect element portion and the magnetic flux guide having different widths are different from each other. 9. The magnetoresistive head according to claim 8, wherein said stabilized antiferromagnetic layer which is directly exchange-coupled or long-distance exchange-coupled is arranged. 12. The magnetoresistive head according to claim 8, wherein said magnetoresistive element has a magnetic sensing layer of an anisotropic magnetoresistive layer. 13. A magnetoresistive head according to claim 8, wherein said magnetoresistive element is a spin valve type giant magnetoresistive element. 14. The magnetoresistive head according to claim 8, wherein said magnetoresistive element is a tunnel type magnetoresistive element. 15. A step of forming a constituent layer of a magnetoresistive element including at least a magnetic sensing layer, and forming at least one of a front magnetic flux guide and a rear magnetic flux guide magnetically coupled to the magnetic sensing element. And stabilizing an antiferromagnetic layer on at least one of the magnetic sensing layer, the front magnetic flux guide, and the rear magnetic flux guide of the magnetoresistive element section, by direct exchange coupling or a nonmagnetic spacer layer. Forming a film by long-distance exchange coupling through a magnetic field, and applying a magnetic field to set the direction of magnetization of the stabilized antiferromagnetic layer and the film directly exchange-coupled or long-distance exchange-coupled thereto. And a method for manufacturing a magnetoresistive element. 16. A method for manufacturing a magnetoresistive effect type magnetic head in which a magnetosensitive part comprises a magnetoresistive effect element, comprising: forming a constituent layer of a magnetoresistive effect element part including at least a magnetic sensing layer; Forming at least one of a front magnetic flux guide and a rear magnetic flux guide magnetically coupled to the magnetic sensing unit; and at least one of the magnetic sensing layer of the magnetoresistive element, the front magnetic flux guide, and the rear magnetic flux guide. Forming a stabilized antiferromagnetic layer on any one of the film surfaces by direct exchange coupling or long-distance exchange coupling via a nonmagnetic spacer layer. A magnetic field applying heat treatment step for setting the direction of magnetization of a film formed by selective exchange coupling or long distance exchange coupling. Law.