JP2002243653A - Micro dust detecting method and detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem of prior art dust detector, in which since it is arranged to observe a part of a sample, a system for observing the entire surface of the sample is required in addition to a method employing a CCD camera, when dust is detected over the entire surface of the sample. SOLUTION: Entire surface of the sample 2 can be observed, by moving the sample 2 or a microscope 8 continuously in the x-y plane.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for detecting a minute foreign matter by irradiating a sample surface with a light beam and observing a change in the beam light caused by the minute foreign matter, thereby detecting the position of the minute foreign matter on the sample surface. The present invention relates to a detection device.

[0002]

2. Description of the Related Art It is said that the yield in the manufacture of ultra-highly integrated LSIs typified by 16 Mbit-DRAM and the like is mostly caused by defects caused by foreign substances adhering to a wafer. This adheres to the wafer in the previous manufacturing process as the pattern width becomes finer,
This is because minute foreign matter, which has not been a problem in the past, becomes a contamination source. It is generally said that the size of the minute foreign matter causing this problem is a fraction of the minimum wiring width of the ultra-high integration LSI to be manufactured.
In a bit-DRAM (minimum wiring width: 0.5 μm), a minute foreign substance having a diameter of 0.1 μm is targeted. Such minute foreign matter becomes a contaminant, causing disconnection and short-circuit of the circuit pattern, and greatly leads to the occurrence of defects, and a decrease in quality and reliability. Therefore, the key point for improving the yield is to detect minute foreign matter and quantitatively and accurately measure, grasp and manage the actual state of the attached state and the like.

As means for performing this, a foreign substance inspection apparatus capable of detecting the position of a minute foreign substance present on the surface of a planar sample such as a silicon wafer has been used. Hereinafter, a foreign substance detection method employed in a conventional foreign substance inspection apparatus will be described.

A light scattering method is used as a foreign matter detection method employed in a foreign matter inspection device. The scattering intensity obtained by scanning the surface of the wafer with the beam light is measured linearly with a photomultiplier tube over time, and the generation time of the scattered signal subjected to light scattering from the fine particles and the This is a method for detecting foreign matter and specifying the position by associating the position of the light beam scanning the. As a conventional foreign substance inspection device, Hitachi Electronics Engineering IS
-2000, LS-6000 or Surfscan 6200 from Tencor, WIS-90 from Estek
00 etc. Further, regarding the measurement principle used in these foreign particle inspection devices and the device configuration for realizing the same, see, for example, “Analysis and Evaluation Technology for High-Performance Semiconductor Processes” published by Realize Inc.
Pp. 129-129.

However, the measurement of fine particles by the conventional method using light scattering is limited by noise generated in the measurement system with respect to the scattered signal from the fine particles, and noise (haze) generated by the influence of surface roughness or the like on a silicon wafer. ), It is extremely difficult to detect minute foreign substances of 0.10 μm or less present on the wafer surface. This is described in detail in, for example, pages 474 to 479 of “Semiconductor Measurement Evaluation Dictionary” published by Science Forum. For this reason, 64M, 256M, 1Gbit-DRAM will be developed and mass-produced in the future.
The management is required for the manufacture of an ultra-highly integrated LSI having the same (minimum wiring width 0.35, 0.20, 0.15 μm) 0.0
A method for detecting minute foreign matter of 7, 0.04, 0.03 μm has not yet been established.

In a particle measuring method using light scattering employed in a conventional foreign particle inspection apparatus, a beam light for detecting minute foreign particles is irradiated while scanning, and the entire beam light is irradiated onto a sample such as a silicon wafer. Since the change in the amount of scattered light generated on the surface is detected linearly using a detector such as a photomultiplier tube, the position of the minute foreign matter should be detected with high accuracy. However, there is an error corresponding to the area of the pixel depending on the area (beam spot) of the light beam on the sample surface. That is, in order to detect the position of the minute foreign matter with high accuracy, it is necessary to reduce the spot of the light beam by focusing the light beam on the surface of the sample as much as possible. . Further, when the spot of the light beam is made small, the length of the scanning line for measuring the entire surface of the sample becomes long, which causes a problem that the measurement time becomes long. Note that the pixels of the existing device are usually an area of 20 × 200 μm square. The laser beam focusing area of the conventional foreign matter inspection apparatus is described in “Analysis / Evaluation Technology for High-Performance Semiconductor Processes” published by Realize Inc.
Details are described on pages 11 to 129.

In order to detect a minute foreign matter of 0.10 μm or less, first, it is necessary to perform high-sensitivity detection while maintaining a high S / N ratio without erroneously detecting the presence of the minute foreign matter, and to perform positioning with high accuracy. Need to be As a method for realizing this, JP-A-8-29354 and JP-A-7-
The conventional method described in detail in Japanese Patent No. 325041 is considered to be effective. In the conventional method, a beam surface is irradiated with a light beam, a spot of the light beam is focused by a microscope, the scattered light is magnified by the microscope, and an image input provided in a dark field portion within the field of view. This is a method of two-dimensional observation (detection) using a high-sensitivity CCD camera or the like equipped with a tensifier or the like. According to this conventional method, haze, which is noise generated on the wafer surface, is detected in a planar manner. Therefore, the haze detected by using a photomultiplier tube used in a conventional foreign matter inspection apparatus (in the plane). Integrate the scattered light depending on minute surface roughness etc.,
(High signal is detected as haze) High S
/ N ratio can be secured.

FIG. 5 is a configuration diagram showing a conventional minute foreign matter detecting device described in the above-mentioned Japanese Patent Application Laid-Open Nos. 7-325041 and 8-29354. In the drawing, 1 is an XY stage, 2 is a sample (here, a silicon wafer), 3 is an Ar laser for irradiating the sample 2, 4 is a detection beam light for detecting minute foreign matter, and 5 is reflected by the sample 2. 8 is a microscope for observing the sample 2, 9 is a CCD camera equipped with an image intensifier for taking an image observed by the microscope 8, 1
Reference numeral 0 denotes a CRT that outputs the field of view of the CCD camera. The detection light beam 4 can be polarized by the polarizing plate 11. 6 and 7 are diagrams showing the state in which the detection beam light 4 is irradiated on the sample 2 in FIG. 6, where 6 is a foreign substance on the sample 2, 7 is irregularly reflected light,
Reference numeral 12 denotes a spot diameter of the light beam 4.

Next, the operation will be described. First, XY
A silicon wafer 2 as a sample is set on a stage 1. The silicon wafer 2 as a sample is given high-precision virtual coordinates on the XY stage 1 by a method based on the outer shape of the wafer, such as an oriental flat or a notch. The method of setting the virtual coordinates is described in detail in Japanese Patent Application No. 7-25118. Next, the silicon wafer 2 is irradiated with the detection light beam 4 to generate a spot portion 12 in FIG. Using the microscope 8 provided in the dark field part, the spot part 1
2 is observed using a CRT 10 via a CCD camera 9. The microscope 8 is focused on the surface of the spot 12. Within the field of view of the microscope 8 (within the spot 12)
If there is a foreign matter 6 in the XY stage, the coordinates (x1, y
In 1), irregularly reflected light 7 is observed (FIG. 7). In addition,
At this time, if there is no foreign matter 6 on the spot portion 12, the detection light beam 4 is specularly reflected, so that the reflected light beam 5 cannot be observed from the dark field portion.

Next, this relationship will be supplementarily described. In the observation system shown in FIG. 7, the observation field range A of the microscope 8 installed in the dark field portion covers the spot diameter 12 on the silicon wafer 2 of the detection beam light 4 irradiated on the silicon wafer 2. It is written. As shown in FIG. 7, the position of the foreign matter 6 inside the spot diameter 12 can be specified by observing the irregularly reflected light 8 with the microscope 8 because the irregularly reflected light 7 is generated on the silicon wafer 2. From experiments, the contrast ratio between the portion where the irregularly reflected light 8 is not generated and the portion where the irregularly reflected light 8 is generated is very high, and is clear even for a foreign substance of 0.03 μm or less, and a sufficient S / N ratio can be secured. Has been confirmed. On the other hand, when the foreign matter 7 does not exist even within the same spot diameter 12, the detection light beam 4 is almost completely specularly reflected, so that almost no observation is possible with the microscope 8 installed in the dark field portion. From these facts, even if the detection beam light 4 having a spot diameter 12 much larger than the foreign matter 6 is used, the irregularly reflected light 7 from the foreign matter 6 can be observed from the microscope 8 installed in the dark field portion. As a result, spot diameter 1
The position of the foreign matter 6 in the inside 2 can be easily specified with high accuracy.

[0011]

As described above, the conventional foreign object detecting device is configured so that a part of the sample can be observed. Therefore, when detecting the foreign object on the entire surface of the sample, the above-mentioned CCD camera is used. The method had a problem that a system for observing the entire surface of the sample had to be added.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and a method for detecting a minute foreign matter of 0.1 μm or less over a wide area on the entire surface of a sample can be easily and quickly performed. And a detection device therefor. Here, the minute foreign matter includes dust having a particle diameter of 0.1 to 0.005 μm and not only dust but also crystal defects and scratches.

[0013]

According to a minute foreign matter detection method of the present invention, a sample surface is irradiated with a light beam, and irregularly reflected light due to the minute foreign matter adhered on the sample surface is focused on a spot portion of the light beam. A microscopic foreign matter detection method for detecting the position of the fine foreign substance in the xy plane by observing with a CCD camera installed in an eyepiece of a microscope to which the sample or the microscope is attached. The entire surface of the sample can be observed by moving the sample continuously in the plane.

An XY stage on which a sample is mounted is provided, and the XY stage is moved in the x-axis direction or the y-axis direction to move the sample so that the entire surface of the sample can be observed. It was done.

A rotary stage for mounting the sample; and a uniaxial slider for linearly moving the rotary stage. The center of the sample is made coincident with the center of the rotary stage, and the rotation center of the rotary stage is set to the uniaxial slider. Placed on the trajectory, further set the center of the field of view of the microscope on the trajectory of the uniaxial slider, move the sample by a combination of linear motion of the uniaxial slider and rotational motion of the rotary stage, the The entire surface of the sample can be observed.

Further, there is provided a detection device for detecting a minute foreign matter by employing the above-described minute foreign matter detection method.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram showing a minute foreign matter detection device according to Embodiment 1 of the present invention. In the figure, reference numeral 101 denotes a position at which irregularly reflected light is generated and XY
This is a computer for calculating the relative positional relationship of the CRT screen 100 on the stage 1, and has the same configuration as the conventional example shown in FIG. Although the observation range to be evaluated is expressed as the CRT screen 100 here, the CRT screen 100 to be actually observed is
Is not limited to CC
This means the entire image signal of the D camera 9. The driving of the XY stage 1 is controlled by the computer 101, and the driving range is a range in which the surface of the silicon wafer 2 can be sufficiently moved. The silicon wafer 2 as a sample is given high-precision virtual coordinates on the XY stage 1 by a method based on the outer shape of the wafer, such as an oriental flat or a notch.
Further, similarly to the conventional example, the spot portion 12 of the detection light beam 4 is larger than the field of view of the microscope 8.

According to the present embodiment, the XY stage 1
X, Y under the control of the computer 101 at a pitch equal to or less than the range of the CRT screen 100 through the visual field of the microscope 8
It is intermittently moved in the direction, and the presence or absence of the irregularly reflected light 7 due to the foreign material 6 and its existence position are detected each time. by this,
On the entire surface of the silicon wafer, even a minute foreign substance of 0.03 μm or less can be easily and quickly identified. The positions of the foreign substances 6 detected at this time are sequentially recorded in the computer 101.

In the first embodiment, since the XY stage 1 is intermittently moved in the X and Y directions, there is a time during which the XY stage 1 stands still and a time when the drive device is turned on / off. Although the measurement time is long, if the XY stage 1 is moved continuously, these times can be saved, and the entire surface of the silicon wafer can be inspected in a shorter time as compared with moving the XY stage 1 intermittently. can do.

Embodiment 2 In the first embodiment, X-
When the Y stage 1 is continuously moved, a part that cannot be inspected occurs on the surface of the silicon wafer 2 due to the relationship between the moving speed of the XY stage 1 and the scanning speed of the CCD camera 9. The present embodiment has been made to solve this problem. The moving direction of the XY stage 1 and the CCD
By installing the CCD camera 9 such that the main scanning direction of the camera 9 is substantially orthogonal and the moving direction of the XY stage 1 and the sub-scanning direction of the CCD camera 9 are opposite, a portion that cannot be inspected is minimized. It is something to reduce.

FIG. 2 is an explanatory diagram for explaining a minute foreign matter detecting method according to the second embodiment of the present invention. In the figure, 1
Reference numeral 10 denotes a scanning line of a CCD camera for detecting light. When moving the XY stage 1 continuously, FIG.
As shown in (a), the main scanning direction of the scanning line 110 and X-
When the CCD camera 9 is set so that the moving direction of the Y stage 1 is the same, the scanning lines 110
Are sequentially shifted from top to bottom (sub-scanning) while scanning left and right (main scanning), a large time difference occurs between the upper left and lower left edges of the CRT screen 100 and the image.
-The Y stage 1 also moves, and the part being observed also advances. Therefore, the area of the wafer surface detected by the CCD camera 9 during the observation time of one frame is diamond-shaped, and as a result, a part that cannot be inspected occurs.

On the other hand, according to the present embodiment, FIG.
As shown in the figure, the moving direction of the XY stage 1 and the scanning line 1
Since the main scanning direction of the CCD camera 9 is set so that the main scanning direction of the CCD camera 9 is substantially orthogonal to the main scanning direction of the X-Y stage 1 and the sub-scanning direction of the CCD camera 9 is reversed. In contrast, the time during which the scanning of the CCD camera 9 is delayed becomes shorter, and the range of the surface of the silicon wafer 2 detected by the CCD camera 9 during one frame of observation time becomes substantially rectangular. Therefore, although the portion that cannot be inspected is small, there is no problem if the minute portion that cannot be inspected is included in the inspection region of the next frame. The entire surface of the silicon wafer 2 can be completely inspected, and the location of the minute foreign matter can be specified.

Embodiment 3 FIG. In the second embodiment, C
Shot noise generated in the CD camera 9 may be erroneously detected as foreign matter. The present embodiment has been made to solve this.

FIG. 3 is an explanatory diagram for explaining a minute foreign matter detecting method according to the third embodiment of the present invention. In the figure, reference numeral 107 denotes a shot noise. Here, the range of the CRT screen is a range where the CRT screen is captured when the XY stage is stationary. As shown in the figure, X
A moving speed v for continuously moving the Y stage 1 in the X and Y directions at a pitch equal to or less than the range of the CRT screen 100;
x and vy are values obtained by dividing the width (Wx) or the height (Wy) of the screen projected by the CRT screen 100 by the time T required for the CCD camera 9 to observe one frame, that is, vx =
Wx / T (when moving the XY stage 1 in the X direction)
Alternatively, vy = Wy / T (when the XY stage 1 is moved in the Y direction), which coincides with the scanning line speed of the CCD camera 9. For example, assume that foreign object detection is started in the state of FIG. 3A (frame n). Since the XY stage 1 is moving rightward on the paper at the speed vx, the foreign matter 6 also moves rightward on the paper at the speed vx. On the other hand, the scanning line 110 is
0 Scanning is performed at a speed vx from the right end to the left in the drawing. FIG. 3 (b)
Indicates a state after T (the time required for the CCD camera 9 to observe one frame) has elapsed from (a).
Is within the CRT screen 100 (the frame of the CCD camera 9). The scanning line 110 is the shot noise 10
After detecting 7, the diffused light 7 generated by the foreign material 6 reaching the left end of the CRT screen 100 is detected, and the inspection of the frame n is completed. Next, the scanning line 110 returns to the right end of the CRT screen 100 again and starts inspection of the frame n + 1. FIG. 3C shows a state after a lapse of T / 2 from this state. Since the foreign material 6 and the scanning line 110 approach each other at the speed vx, the contact between them (the scanning line 110 detects the irregularly reflected light 7 due to the foreign material 6 again) is CR
Wx / 2 from the end of the T screen. And scanning line 1
10 reaches the left end of the CRT screen 100 and the frame n +
1 is completed, and the frame n +
Inspection 2 starts. That is, for one foreign substance 6,
The irregularly reflected light 7 is detected twice in the frame n and the frame n + 1, and the interval time between the detection of the two irregularly reflected lights 7 is T.
/ 2. Therefore, if the interval time of the detection signal is T / 2, if the computer 101 recognizes that the irregularly reflected light 7 is generated by the foreign matter 6, the foreign matter 6 can be easily recognized.
And the shot noise 107 can be distinguished. Note that the direction of a straight line connecting the positions of the detection signals of the foreign matter 6 appearing on the respective frame screens with respect to the foreign matter 6 coincides with the moving direction of the XY stage 1. The signal and the shot noise 107 can be distinguished. As described above, according to the present embodiment, shot noise and a detection signal due to a foreign substance can be easily separated, and a high S / S
N ratio can be realized. The third embodiment
Then, the moving speed of the XY stage 1 is set to vx or vy.
However, if the speed is less than or equal to vx or vy, irregularly reflected light is generated on a plurality of frames for one foreign object, and the interval time between signals of adjacent frames is measured, the same as in the third embodiment described above. The effect of is obtained.

Embodiment 4 In the first to third embodiments, the XY stage 1 is used as the sample stage. However, in the present embodiment, a rotary stage is used instead of the XY stage 1.

FIG. 4 is a configuration diagram showing a minute foreign matter detecting device according to a fourth embodiment of the present invention. In the figure, 21 is a rotary stage, 22 is a spindle, and 23 is a uniaxial slider. The center position of the silicon wafer 2 and the center position of the rotary stage 21 are matched with each other.
One rotation center is set on the trajectory of the uniaxial slider 23. The field of view of the microscope 8 is set on the trajectory on which the uniaxial slider 23 moves.

Next, the operation will be described. First, the field of view of the microscope 8 is adjusted to the center position of the silicon wafer 2 set on the rotating stage 21. Next, the computer 101
The inspection is performed by intermittently rotating the spindle 22 controlled by the computer 101 and intermittently moving the single-axis slider 23 also controlled by the computer 101. In addition, the spindle 22 and the uniaxial slider 2
If the silicon wafer 2 is continuously moved from the inner circumference to the outer circumference of the silicon wafer 2, the entire surface of the silicon wafer 2 can be efficiently inspected in a spiral shape as shown in FIG. The position can be specified easily and in a short time. At this time, the CCD camera 9 is
As shown in (b), the rotation direction of the rotary stage 21 and C
When the main scanning direction of the CD camera 9 is substantially orthogonal to the main scanning direction, and the rotation direction of the rotary stage 21 and the sub-scanning direction of the CCD camera 9 are set to be opposite to each other, the same effect as in the second embodiment can be obtained. Can be Further, the moving speed of the uniaxial slider 23 may be gradually reduced as moving from the inner circumference to the outer circumference. If the peripheral speed is set to vx or vy in the third embodiment, the same effect as in the third embodiment can be obtained.

In the first to fourth embodiments, X-
Although the sample 2 is moved by moving the Y stage 1, the same effect can be obtained by moving the microscope 8 on the XY stage 1 and fixing the sample 2.

Further, in the first to fourth embodiments, it is described that the irregularly reflected light is detected on the CRT screen 100. However, in actuality, an image signal (scanning line) obtained from the CCD camera 9 is obtained. The signal is input to the computer 101, and is determined by performing an arithmetic process.

[0030]

According to the first aspect of the present invention, the entire surface of the sample can be observed by moving the sample or the microscope continuously in the xy plane, so that the entire surface of the wafer can be observed. Can be inspected easily and in a short time, and the effect of detecting minute foreign matter can be obtained.

According to the second aspect of the present invention, since the image pickup tube is a CCD camera, an effect of detecting minute foreign matter with high accuracy can be obtained.

According to the third aspect of the present invention, the CC
Since the D camera is equipped with an image intensifier, an effect of detecting minute foreign matter with high sensitivity can be obtained.

According to the fourth aspect of the present invention, an XY stage for mounting a sample is provided, and the entire surface of the sample is observed by moving the XY stage in the x-axis direction or the y-axis direction. Because of this, the effect of easily and quickly inspecting the entire surface of the wafer to detect minute foreign matter can be obtained.

According to the fifth aspect of the present invention, the moving direction of the XY stage and the moving direction of the imaging range of the image of the sample surface sequentially imaged by the imaging tube in frames are reversed. Since the image pickup tube is installed as described above, the effect of easily and quickly inspecting the entire surface of the wafer and detecting minute foreign matter can be obtained.

According to the sixth aspect of the present invention, the entire surface of the sample can be observed by a combination of the linear motion of the uniaxial slider and the rotary motion of the rotary stage. In addition, the effect of detecting the minute foreign matter by performing the inspection in a short time can be obtained.

According to the present invention, the moving direction of the rotating stage and the moving direction of the imaging range of the image of the sample surface sequentially imaged by the imaging tube in frames are reversed. Since the image pickup tube is provided, the effect of easily and quickly inspecting the entire surface of the wafer to detect minute foreign matter can be obtained.

According to an eighth aspect of the present invention, there is provided a detection apparatus for detecting a minute foreign matter by employing the method for detecting a minute foreign matter according to any one of the first to seventh aspects. The effect of easily and quickly inspecting and detecting minute foreign matter can be obtained.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a minute foreign matter detection device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a method for detecting a minute foreign matter according to a second embodiment of the present invention.

FIG. 3 is a diagram illustrating a method for detecting a minute foreign matter according to a third embodiment of the present invention.

FIG. 4 is a configuration diagram showing a minute foreign matter detection device according to a fourth embodiment of the present invention.

FIG. 5 is a configuration diagram illustrating a conventional minute foreign matter detection device.

FIG. 6 is a view for explaining a conventional method for detecting a minute foreign matter.

FIG. 7 is a diagram illustrating a conventional method for detecting a minute foreign matter.

[Explanation of symbols]

1 XY stage, 2 samples (silicon wafer), 3
Ar laser, 4 detection beam light, 5 reflected beam light, 6 minute foreign matter, 7 irregularly reflected light, 8 microscope, 9 CC
D camera, 10 CRT, 11 polarizing plate, 21 rotating stage, 22 spindle, 23 uniaxial slider, 1
01 Computer

 ──────────────────────────────────────────────────続 き Continuing on the front page F term (reference) 2F065 AA03 AA07 AA20 AA49 BB02 BB05 CC19 DD03 DD06 FF04 FF41 FF67 GG05 HH04 HH12 JJ03 JJ09 JJ26 MM03 PP12 QQ25 QQ28 QQ31 2G051 AA51 AB01 EA07 DA05 BA05 BA06 CA41 DB04 DJ04 DJ06 DJ20 DJ24

Claims (8)

[Claims] 1. A sample surface is irradiated with a beam light, and irregularly reflected light due to minute foreign matter on the sample surface is detected from a dark field portion of a microscope focused on a spot portion of the beam light, and the irregularly reflected light is detected. By observing in the field of view of the microscope, or imaging with an imaging tube installed in the eyepiece of the microscope, and observing the captured image with a CRT, or analyzing the captured image with a computer, X
A minute foreign matter detection method for detecting a position in the y-plane,
A minute foreign matter detection method, wherein the entire surface of the sample is observed by continuously moving the sample or the microscope in an xy plane. 2. The method according to claim 1, wherein the imaging tube is a CCD camera. 3. The method according to claim 2, wherein the CCD camera is equipped with an image intensifier. 4. An XY stage for mounting a sample,
4. The apparatus according to claim 1, wherein the sample is moved by moving the XY stage in an x-axis direction or a y-axis direction, and the entire surface of the sample is observed. Small foreign matter detection method. 5. The image pickup tube is installed such that a moving direction of the XY stage and a moving direction of an image pickup range of an image of the sample surface sequentially imaged by the image pickup tube are reversed. The method for detecting minute foreign matter according to any one of claims 1 to 4, wherein: 6. A rotary stage on which a sample is mounted, and a uniaxial slider for linearly moving the rotary stage, wherein the center of the sample and the center of the rotary stage coincide with each other, and the rotation center of the rotary stage is set to the uniaxial slider. Placed on the trajectory, further set the center of the field of view of the microscope on the trajectory of the uniaxial slider, move the sample by a combination of linear motion of the uniaxial slider and rotational motion of the rotary stage, the The method for detecting a minute foreign matter according to claim 1, wherein the entire surface of the sample is observed. 7. The imaging tube is installed such that a moving direction of the rotary stage and a moving direction of an imaging range of an image of the sample surface sequentially imaged by the imaging tube in a frame direction are opposite to each other. The method for detecting minute foreign matter according to claim 6. 8. A minute foreign matter detection device that detects a minute foreign matter by employing the minute foreign matter detection method according to claim 1. Description: