JP2002239376A - Surface treatment apparatus and method - Google Patents

Surface treatment apparatus and method

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Publication number
JP2002239376A
JP2002239376A JP2001045159A JP2001045159A JP2002239376A JP 2002239376 A JP2002239376 A JP 2002239376A JP 2001045159 A JP2001045159 A JP 2001045159A JP 2001045159 A JP2001045159 A JP 2001045159A JP 2002239376 A JP2002239376 A JP 2002239376A
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JP
Japan
Prior art keywords
dielectric
base material
electrodes
substrate
surface modification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001045159A
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Japanese (ja)
Other versions
JP4756253B2 (en
Inventor
Mayumi Nakao
真由美 仲尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Hokushin Industries Corp
Hokushin Industry Co Ltd
Original Assignee
Honda Motor Co Ltd
Hokushin Industries Corp
Hokushin Industry Co Ltd
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Publication date
Application filed by Honda Motor Co Ltd, Hokushin Industries Corp, Hokushin Industry Co Ltd filed Critical Honda Motor Co Ltd
Priority to JP2001045159A priority Critical patent/JP4756253B2/en
Publication of JP2002239376A publication Critical patent/JP2002239376A/en
Application granted granted Critical
Publication of JP4756253B2 publication Critical patent/JP4756253B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a surface treatment apparatus and a surface treatment method which can resist to dielectric breakdown even when a ferroelectric material such as titanium oxide or barium titanate is used, can realize at atmospheric pressure a composite barrier discharge generating a plasma of a high energy density, and can realize the highly efficient surface modification of a substrate. SOLUTION: In an apparatus that modifies the surface of a substrate held between the first and second electrodes provided with opposed first and second flat electrodes 22 and 23, a dielectric member 24A interposed between the electrodes 22 and 23, and a means that generates a barrier discharge by applying a high voltage between the electrodes 22 and 23 at atmospheric pressure, the member 24A comprises a first material comprising a dielectric and a second material which is lower than the dielectric in mechanical strengths and lower than it in permittivity and has an average permittivity of at least 30 along the direction of surface.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、プラズマ放電処理
方法により被処理物表面に疎水性を与える表面改質装置
及び表面改質方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface modification apparatus and a surface modification method for imparting hydrophobicity to the surface of an object to be treated by a plasma discharge treatment method.

【0002】[0002]

【従来の技術】防水・防汚の観点から疎水化技術は重要
な技術であり、疎水化処理の方法として、フッ素やシリ
コーンを湿式コーティングする方法が一般的に知られて
いる。
2. Description of the Related Art Hydrophobizing technology is an important technology from the viewpoint of waterproofing and antifouling, and a method of wet coating fluorine or silicone is generally known as a hydrophobizing method.

【0003】一方、プラズマ放電により基材表面にフッ
素含有基を導入して撥水化する方法も知られている。例
えば、特開平9−194616号公報、特開平9−24
9756号公報には、チタン酸バリウム等の強誘電体を
金属電極間に挿入し、放電を発生させることにより基材
の表面改質を行う方法が開示されている。プラズマ放電
による疎水化処理は、気化したフッ素含有化合物をプラ
ズマ中に導き、被処理材表面に反応させることにより、
フッ素含有基を導入するものである。
On the other hand, a method of introducing a fluorine-containing group into a substrate surface by plasma discharge to make the substrate water-repellent is also known. For example, JP-A-9-194616, JP-A-9-24
No. 9756 discloses a method in which a ferroelectric substance such as barium titanate is inserted between metal electrodes to generate a discharge, thereby modifying the surface of a base material. Hydrophobic treatment by plasma discharge is to introduce the vaporized fluorine-containing compound into the plasma and react it on the surface of the material to be treated.
A fluorine-containing group is introduced.

【0004】湿式法による撥水化処理の多くがフッ素や
シリコンを基材表面に堆積させるだけであるのに対し、
プラズマ放電処理では基材本体と基材表面との間に化学
的な結合が形成されるため耐久性に優れた疎水化処理品
が得られる。また、プラズマ放電法は、乾式処理である
ため溶剤を必要とせず、環境への負荷が小さく、さら
に、布地のような内部構造を有する物に対しても、内部
の繊維にまで疎水性を施すことが可能である。
[0004] While most of the water-repellent treatments by the wet method only deposit fluorine or silicon on the substrate surface,
In the plasma discharge treatment, a chemical bond is formed between the base material body and the base material surface, so that a hydrophobized product having excellent durability can be obtained. In addition, since the plasma discharge method is a dry process, it does not require a solvent, has a small load on the environment, and further imparts hydrophobicity to internal fibers even for objects having an internal structure such as cloth. It is possible.

【0005】[0005]

【発明が解決しようとする課題】上述したように、プラ
ズマ放電処理による疎水化処理は有用であるが、基材材
質にもよるが、十分な疎水性を得るために数分の処理時
間が必要であり生産性に欠けるという問題がある。すな
わち、プラズマ放電処理法により短時間で大面積の疎水
化処理を施すためには、プラズマ処理装置の大型化か、
もしくは誘電材料に強誘電体を用いる必要があるが、装
置の大型化は設備費、処理コストが高くなるため、湿式
処理に劣るという問題がある。
As described above, the hydrophobic treatment by the plasma discharge treatment is useful. However, depending on the material of the base material, a treatment time of several minutes is required to obtain sufficient hydrophobicity. However, there is a problem that productivity is lacking. That is, in order to perform the hydrophobic treatment of a large area in a short time by the plasma discharge processing method, it is necessary to increase the size of the plasma processing apparatus,
Alternatively, it is necessary to use a ferroelectric material as a dielectric material, but there is a problem that the increase in the size of the apparatus is inferior to wet processing because equipment costs and processing costs increase.

【0006】一方、誘電材料に比誘電率が高い強誘電体
を用いるほど、低い印加電圧、短時間で基材に疎水化処
理を施すことができるが、絶縁破壊等の問題があるた
め、実際の使用に耐えることは困難である。
On the other hand, the use of a ferroelectric substance having a high relative dielectric constant as a dielectric material allows the substrate to be subjected to a hydrophobic treatment in a lower applied voltage and in a shorter time. It is difficult to withstand use.

【0007】例えば、従来から、酸化チタン、チタン酸
バリウム等の強誘電性材料を誘電体として使用し、放電
処理によってCF等を処理ガスとしてグロー放電プラ
ズマを大気圧下で利用し非処理物表面に疎水性を与える
試みがなされている。しかしながら、一般的に強誘電体
材料ほど機械的強度が低いため、上述したようにチタン
酸バリウム等の強誘電体のみを使用した場合には前記誘
電体が絶縁破壊してしまうため、実際の使用に耐えるこ
とは困難である。
[0007] For example, conventionally, a titanium oxide, a ferroelectric material such as barium titanate is used as a dielectric, a glow discharge plasma as a processing gas such as CF 4 by discharge treatment using at atmospheric pressure non-treated Attempts have been made to impart hydrophobicity to the surface. However, since the mechanical strength is generally lower in a ferroelectric material, when only a ferroelectric material such as barium titanate is used as described above, the dielectric material is dielectrically broken down. It is difficult to endure.

【0008】本発明は、上記問題点を解決し、酸化チタ
ン、チタン酸バリウム等の強誘電性材料を使用した場合
でも絶縁破壊しにくく、且つ発生するプラズマのエネル
ギー密度の高い複合バリア放電を大気圧下で実現すると
共に、基材の表面改質の高効率化を実現する表面処理装
置及び表面処理方法を提供することを課題とする。
The present invention solves the above-mentioned problems, and makes it difficult to cause dielectric breakdown even when a ferroelectric material such as titanium oxide or barium titanate is used and to generate a composite barrier discharge having a high energy density of generated plasma. It is an object of the present invention to provide a surface treatment apparatus and a surface treatment method that can be realized under atmospheric pressure and that achieve high efficiency of surface modification of a substrate.

【0009】[0009]

【課題を解決するための手段】前記課題を解決する本発
明の第1の態様は、相対向する平板型の第1の電極及び
第2の電極と、これら第1及び第2の電極の間に介装さ
れる誘電部材と、前記第1及び第2の電極の間に電位差
を付与する電位差付与手段を備え、前記第1及び第2の
電極間に大気圧下で高電圧を印加してバリア放電を発生
させることにより、前記第1及び第2の電極間に保持さ
れる被処理体の表面の改質を行う装置において、前記誘
電部材が、誘電体からなる第1の基材と、前記誘電体よ
り機械的強度が相対的に小さいが誘電率が相対的に大き
い第2の基材とからなり且つ面方向に亘った平均誘電率
が30以上であることを特徴とする表面改質装置にあ
る。
According to a first aspect of the present invention, there is provided a first and second flat plate-shaped electrodes facing each other, and a first electrode and a second electrode provided between the first and second electrodes. And a potential difference applying means for applying a potential difference between the first and second electrodes, and applying a high voltage between the first and second electrodes under atmospheric pressure. In a device for modifying the surface of the object to be processed held between the first and second electrodes by generating a barrier discharge, the dielectric member includes a first base material made of a dielectric, A surface modification comprising a second substrate having a mechanical strength relatively smaller than that of the dielectric but a relatively large dielectric constant, and having an average dielectric constant in the plane direction of 30 or more. In the device.

【0010】本発明の第2の態様は、第1の態様におい
て、前記第2の基材が、酸化チタンもしくはチタン酸バ
リウム、チタン酸カルシウム、チタン酸ストロンチウム
等のチタン酸金属化合物から選択されることを特徴とす
る表面改質装置にある。
According to a second aspect of the present invention, in the first aspect, the second substrate is selected from titanium oxide or a metal titanate compound such as barium titanate, calcium titanate, and strontium titanate. A surface reforming apparatus characterized in that:

【0011】本発明の第3の態様は、第1又は2の態様
において、前記第1の基材が、酸化マグネシウム、酸化
アルミニウム、ガラス、及びジルコニアからなる群から
選択されることを特徴とする表面改質装置にある。
According to a third aspect of the present invention, in the first or second aspect, the first substrate is selected from the group consisting of magnesium oxide, aluminum oxide, glass, and zirconia. In the surface modification device.

【0012】本発明の第4の態様は、第1〜3の何れか
の態様において、前記誘電部材が、前記第1の基材に前
記第2の基材が分散されたものであることを特徴とする
表面改質装置にある。
According to a fourth aspect of the present invention, in any one of the first to third aspects, the dielectric member is formed by dispersing the second base material in the first base material. Characteristic surface modification equipment.

【0013】本発明の第5の態様は、第1〜3の何れか
の態様において、前記誘電部材が、前記第1の基材から
なる部材に前記第2の基材が部分コーティングされてな
るものであることを特徴とする表面改質装置にある。
According to a fifth aspect of the present invention, in any one of the first to third aspects, the dielectric member is obtained by partially coating the member made of the first base material with the second base material. A surface reforming apparatus characterized in that:

【0014】本発明の第6の態様は、相対向する平板型
の第1の電極及び第2の電極と、これら第1及び第2の
電極の間に介装される誘電部材とを用い、前記第1及び
第2の電極間に被処理体を保持して、前記第1及び第2
の電極の間に大気圧下で高電圧を印加してバリア放電を
発生させることにより、前記被処理体の表面改質を行う
方法において、前記誘電部材として、誘電体からなる第
1の基材と、前記誘電体より機械的強度が相対的に小さ
いが誘電率が相対的に大きい第2の基材とからなり且つ
面方向に亘った平均誘電率が30以上のものを用いて複
合バリア放電を発生させることを特徴とする表面改質方
法にある。
According to a sixth aspect of the present invention, a flat plate-shaped first electrode and a second electrode facing each other and a dielectric member interposed between the first and second electrodes are used. An object to be processed is held between the first and second electrodes, and the first and second electrodes are held.
A method in which a high voltage is applied between the electrodes under atmospheric pressure to generate a barrier discharge, thereby modifying the surface of the object to be processed, wherein the first member made of a dielectric is used as the dielectric member And a second base material having a mechanical strength relatively lower than that of the dielectric but a relatively high dielectric constant, and having an average dielectric constant of 30 or more in the plane direction. The surface modification method is characterized by generating

【0015】本発明の第7の態様は、第6の態様におい
て、前記第2の基材が、酸化チタンもしくはチタン酸バ
リウム、チタン酸カルシウム、チタン酸ストロンチウム
等のチタン酸金属化合物であることを特徴とする表面改
質方法にある。
According to a seventh aspect of the present invention, in the sixth aspect, the second substrate is a metal titanate compound such as titanium oxide or barium titanate, calcium titanate, strontium titanate or the like. The characteristic surface modification method.

【0016】本発明の第8の態様は、第6又は7の態様
において、前記第1の基材が、酸化マグネシウム、酸化
アルミニウム、ガラス及びジルコニアからなる群から選
択されることを特徴とする表面改質方法にある。
According to an eighth aspect of the present invention, in the sixth or seventh aspect, the first substrate is selected from the group consisting of magnesium oxide, aluminum oxide, glass and zirconia. In the reforming method.

【0017】本発明の第9の態様は、第6〜8の何れか
の態様において、前記第2の基材が前記第1の基材に分
散されていることを特徴とする表面改質方法にある。
A ninth aspect of the present invention is the surface modification method according to any one of the sixth to eighth aspects, wherein the second base material is dispersed in the first base material. It is in.

【0018】本発明の第10の態様は、第6〜9の何れ
かの態様において、前記第2の基材が前記第1の基材か
らなる部材に部分コーティングされていることを特徴と
する表面改質方法にある。
According to a tenth aspect of the present invention, in any one of the sixth to ninth aspects, the second substrate is partially coated on a member made of the first substrate. In the surface modification method.

【0019】本発明法によれば、機械強度が、例えば、
曲げ強度で約100Mpa以上と比較的高い誘電性材料
よりなる第1の基材と、機械強度が、相対的に低いが、
誘電率が第1の基材より相対的に大きい誘電材料、いわ
ゆる強誘電性材料よりなる第2の基材とを組み合わせた
複合誘電部材を用いることにより、絶縁破壊を起こしに
くく且つ発生するプラズマのエネルギー密度の高い複合
バリア放電の実現が可能となる。
According to the method of the present invention, the mechanical strength is, for example,
A first base material made of a dielectric material having a relatively high bending strength of about 100 Mpa or more, and a mechanical strength is relatively low,
By using a composite dielectric member in which a dielectric material having a dielectric constant relatively higher than that of the first base material, that is, a second base material made of a so-called ferroelectric material is used, dielectric breakdown is less likely to occur and plasma generated is less likely to occur. A composite barrier discharge having a high energy density can be realized.

【0020】ここで、複合バリア放電とは、微小放電柱
を形成する、従来のバリア放電に、雷状放電柱を形成す
る集中放電を複合させた形態の放電で、グロー放電領域
10 −4〜10−1A/cmでバリア放電形態を保つ
もので、この複合バリア放電により、プラズマの高体
積、高エネルギー化が可能となる。
Here, the composite barrier discharge means a minute discharge column.
Form a lightning discharge column on a conventional barrier discharge
Glow discharge area
10 -4-10-1A / cm2To maintain barrier discharge mode
In the composite barrier discharge, the body of the plasma
Product and high energy.

【0021】また、大気圧下プラズマ処理による表面フ
ッ素化反応は、誘電体の比誘電率が10未満であると、
フッ素ガスの分解よりも、表面のエッチング反応が先に
起こり表面は疎水化ではなく、逆に親水化が進行され、
表面の疎水性が見られるまでに数分のプラズマ放電処理
時間を要する。しかし、比誘電率が30以上の誘電体を
用いると、表面の親水化は見られず、数秒で表面が疎水
化される。従って、本発明において、良好な複合バリア
放電を実現するためには、前記誘電部材の面方向に亘っ
た平均誘電率は30以上であるのが好ましい。
In the surface fluorination reaction by plasma treatment under atmospheric pressure, if the relative dielectric constant of the dielectric is less than 10,
The etching reaction of the surface occurs earlier than the decomposition of fluorine gas, and the surface is not hydrophobized, but the surface is hydrophilized,
Several minutes of plasma discharge treatment time are required until hydrophobicity of the surface is observed. However, when a dielectric having a relative dielectric constant of 30 or more is used, the surface is not hydrophilized, and the surface is hydrophobized in a few seconds. Therefore, in the present invention, in order to realize a good composite barrier discharge, it is preferable that the average dielectric constant in the plane direction of the dielectric member is 30 or more.

【0022】本発明に使用される第1の基材は、第2の
基材より誘電率は相対的に小さいが相対的に機械強度の
大きなもの、例えば、曲げ強度で約150Mpa以上、
好ましくは200MPa以上の誘電性材料であり、一例
として、酸化マグネシウム、酸化アルミニウム、ガラス
等を挙げることができる。
The first base material used in the present invention has a relatively low dielectric constant but a relatively high mechanical strength than the second base material, for example, a bending strength of about 150 Mpa or more.
Preferably, it is a dielectric material of 200 MPa or more, and examples thereof include magnesium oxide, aluminum oxide, and glass.

【0023】また、第2の基材は、できるだけ強誘電率
の誘電性材料であれば制限はないが、特に好ましい材料
として強誘電性材料である酸化チタン、チタン酸バリウ
ム、チタン酸カルシウム、チタン酸ストロンチウム等の
チタン酸金属化合物が挙げられる。
The second base material is not limited as long as it is a dielectric material having a ferroelectric constant as much as possible. Particularly preferred materials are ferroelectric materials such as titanium oxide, barium titanate, calcium titanate and titanium. And metal titanate compounds such as strontium acid.

【0024】第1の基材と第2の基材を複合化した誘電
部材の面方向の平均誘電率は、30以上、好ましくは5
0以上、更に好ましくは100以上とするのがよい。ま
た、機械的強度は、曲げ強度で、150Mpa以上、好
ましくは200MPa以上であることが好ましい。誘電
部材の曲げ強度が上記範囲以下だと、プラズマ放電の際
に絶縁破壊をおこし、目的とする良好な複合バリア放電
を得る事ができない。
The average dielectric constant in the plane direction of the dielectric member obtained by combining the first base material and the second base material is 30 or more, preferably 5 or more.
It is good to be 0 or more, more preferably 100 or more. Further, the mechanical strength is 150 MPa or more, preferably 200 MPa or more in bending strength. If the bending strength of the dielectric member is less than the above range, dielectric breakdown occurs at the time of plasma discharge, and the desired good composite barrier discharge cannot be obtained.

【0025】第1の基材と第2の基材との複合化の形態
としては、第1の基材中に第2の基材の微粒子をバイン
ダー的に分散する、もしくは第1の基材に第2の基材を
部分コーティングする等が挙げられるが、第1及び第2
の基材が共に誘電部材表面に露出していればよく、必ず
しも、これらの形態に限定されるものではない。複合化
の割合としては、第1の基材を5%〜40%、第2の基
材を60%〜95%の割合で配合することが好ましい
が、最も好ましい割合は、第1の基材5%〜20%、第
2の基材80%〜95%である。
The first and second substrates may be combined in a form in which fine particles of the second substrate are dispersed as a binder in the first substrate, or the first substrate is dispersed. To partially coat the second substrate, and the like, but the first and second
It is sufficient that both of the base materials are exposed on the surface of the dielectric member, and the present invention is not necessarily limited to these forms. It is preferable to mix the first base material at a ratio of 5% to 40% and the second base material at a ratio of 60% to 95%, but the most preferable ratio is the first base material. 5% to 20%, and the second base material is 80% to 95%.

【0026】本発明では、このような複合化誘電材料を
用いることにより、大気圧下で、バリア放電と集中放電
とが複合した複合バリア放電が形成でき、且つ放電開始
電圧も低くてすみ、誘電材料の絶縁破壊も生じないとい
う効果を奏する。
In the present invention, by using such a composite dielectric material, a composite barrier discharge in which a barrier discharge and a concentrated discharge are combined under atmospheric pressure can be formed, and the discharge starting voltage can be reduced. This has the effect of preventing the dielectric breakdown of the material.

【0027】すなわち、本発明では、大気圧下、数十k
Hz程度の周波数で、数kVの印加電圧により複合バリ
ア放電を形成することができ、高効率で且つ短時間で表
面処理を行うことができる。
That is, in the present invention, under atmospheric pressure, several tens of k
A composite barrier discharge can be formed with an applied voltage of several kV at a frequency of about Hz, and surface treatment can be performed with high efficiency and in a short time.

【0028】[0028]

【発明の実施の形態】以下、本発明を実施の形態に基づ
いて説明するが、本発明はこれに限定されるものではな
い。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described based on embodiments, but the present invention is not limited to these embodiments.

【0029】[第1の実施の形態]図1に本実施の形態
にかかるプラズマ反応装置の概略図を示す。図2は誘電
体部材の斜視図である。
[First Embodiment] FIG. 1 is a schematic view of a plasma reactor according to the present embodiment. FIG. 2 is a perspective view of the dielectric member.

【0030】これらの図面に示すように、本実施の形態
にかかる表面処理装置は、ガス導入管11、ガス排出管
12を備えた反応処理容器10の内部にプラズマ放電処
理装置20を具備するものである。プラズマ放電処理装
置20は、反応容器21内に第1の電極である金属平板
型電極22と、該金属平板型電極22と所定の間隔をあ
けて対向して配置された第2の電極である金属製平板型
電極23と、該金属製平板型電極23の表面を覆うよう
に配された誘電部材24Aと、金属製平板型電極22及
び23の間に電圧を印加する電源ユニット25とを具備
する。金属製平板型電極22と誘電部材24との間が放
電空間26となっており、誘電部材24の上に被処理物
30を載置するようになっている。
As shown in these drawings, the surface treatment apparatus according to the present embodiment has a plasma discharge treatment apparatus 20 inside a reaction treatment vessel 10 having a gas introduction pipe 11 and a gas discharge pipe 12. It is. The plasma discharge processing apparatus 20 is a metal plate-type electrode 22 that is a first electrode in a reaction vessel 21 and a second electrode disposed to face the metal plate-type electrode 22 at a predetermined interval. It comprises a metal plate electrode 23, a dielectric member 24A arranged to cover the surface of the metal plate electrode 23, and a power supply unit 25 for applying a voltage between the metal plate electrodes 22 and 23. I do. A discharge space 26 is formed between the metal plate electrode 22 and the dielectric member 24, and the workpiece 30 is placed on the dielectric member 24.

【0031】なお、反応容器21は、電極22,23と
絶縁がとれていれば材質は特に限定されず、例えば、パ
イレックス(登録商標)ガラス製のもの、アクリル製の
もの、セラミックス製のもの等が挙げられる。
The material of the reaction vessel 21 is not particularly limited as long as it is insulated from the electrodes 22 and 23. For example, Pyrex (registered trademark) glass, acrylic, ceramic, etc. Is mentioned.

【0032】ここで、誘電部材24Aは、例えば、図2
に示すように、第1の基材41Aに、第2の基材42A
よりなる誘電体微粒子を分散させたものである。この場
合、表面に第2の基材42Aが分散状態で露出してい
る。
Here, the dielectric member 24A is, for example, as shown in FIG.
As shown in the figure, the first base material 41A is attached to the second base material 42A.
In which dielectric fine particles are dispersed. In this case, the second base material 42A is exposed on the surface in a dispersed state.

【0033】このような誘電部材24Aを用いると、第
1の基材41A中に第2の基材42Aが微粒子としてバ
インダー的に分散されているので、放電中にエネルギー
の高い放電柱が混在する形態の複合バリア放電が実現で
き、基材の表面改質の高効率化が実現可能となる。
When such a dielectric member 24A is used, since the second base material 42A is dispersed as fine particles as a binder in the first base material 41A, discharge columns having high energy are mixed during the discharge. It is possible to realize a complex barrier discharge in a form, and to realize high efficiency of surface modification of a substrate.

【0034】また、第1の基材41Aにより機械的強度
は確保されるので、繰り返し放電を行っても誘電部材が
絶縁破壊を起こすこともない。
Further, since the mechanical strength is secured by the first base material 41A, dielectric breakdown does not occur in the dielectric member even when the discharge is repeatedly performed.

【0035】なお、本実施形態の誘電部材24Aを用い
ると、所定の機械的強度を有しながら平均誘電率が高い
ので、低い駆動電圧で放電が可能となり、表面処理時間
を短くすることができる。
When the dielectric member 24A of this embodiment is used, since the average dielectric constant is high while having a predetermined mechanical strength, discharge can be performed at a low driving voltage, and the surface treatment time can be shortened. .

【0036】[第2の実施の形態]図3に、本発明の他
の実施形態を示す。
[Second Embodiment] FIG. 3 shows another embodiment of the present invention.

【0037】本実施形態の誘電部材24Bは、第1の基
材41Bの表面に第2の基材42Bを部分コーティング
したものである。このような形態でも、上述した第1の
実施の形態と同様の効果を奏することができる。
The dielectric member 24B of this embodiment is obtained by partially coating the surface of a first base material 41B with a second base material 42B. Even in such an embodiment, the same effects as those of the first embodiment can be obtained.

【0038】すなわち、第1の基材41Aに第2の基材
42Bが部分コーティングされていることで、誘電部材
表面に2種類の基材が露出し、その結果、良好な複合バ
リア放電の実現が可能となる。なお、機械的強度は第1
の基材41Bにより確保される。
That is, since the first base material 41A is partially coated with the second base material 42B, two types of base materials are exposed on the surface of the dielectric member, and as a result, a good composite barrier discharge is realized. Becomes possible. The mechanical strength is the first
Of the base material 41B.

【0039】[0039]

【実施例】以下、本発明の好適な実施例について説明す
るが、本発明は何らこれらの実施例に限定されるもので
はない。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below, but the present invention is not limited to these embodiments.

【0040】[実施例1]図1に示すような平板型電極
構造を有する装置を用い、平均粒径約1μmの酸化マグ
ネシウム誘電体20重量部中に、平均粒径約10μmの
チタン酸カルシウム微粒子80重量部とからセラミック
スを焼成した。このセラミックスの平均誘電率は100
であった。
Example 1 Using an apparatus having a flat electrode structure as shown in FIG. 1, fine particles of calcium titanate having an average particle size of about 10 μm were contained in 20 parts by weight of a magnesium oxide dielectric having an average particle size of about 1 μm. The ceramic was fired from 80 parts by weight. The average dielectric constant of this ceramic is 100
Met.

【0041】これを誘電部材24Aとし、被処理物とし
てポリエチレンテレフタレートフィルムを用い下記の条
件で複合バリア放電によりポリエチレンテレフタレート
基材の表面疎水化処理をおこなった。
This was used as a dielectric member 24A, and a polyethylene terephthalate film was used as an object to be treated, and the surface of the polyethylene terephthalate substrate was hydrophobized by composite barrier discharge under the following conditions.

【0042】本実施例にかかる基材の表面処理条件を以
下に示す。 ・ガス組成:CF/He(5/95)(閉じこめ系) ・電極−被処理物間の距離:1mm ・処理時の周波数:55kHz ・処理時圧力:760Torr(大気圧) ・誘電部材:酸化マグネシウム/チタン酸カルシウム
(20/80) ・被処理物:ポリエチレンテレフタレート(PET)フ
ィルム ・照射時間:10秒〜3分
The conditions for the surface treatment of the substrate according to this example are shown below.・ Gas composition: CF 4 / He (5/95) (confinement system) ・ Distance between electrode and workpiece: 1 mm ・ Frequency during processing: 55 kHz ・ Pressure during processing: 760 Torr (atmospheric pressure) ・ Dielectric member: oxidation Magnesium / calcium titanate (20/80) ・ Object to be treated: polyethylene terephthalate (PET) film ・ Irradiation time: 10 seconds to 3 minutes

【0043】上記した条件下で基材の表面処理をおこな
ったところ、誘電部材は絶縁破壊を起こすことなく、
又、得られた被処理物の疎水性も良好であった。この結
果を図4に示す。
When the surface treatment of the base material was performed under the above conditions, the dielectric member did not cause dielectric breakdown,
Moreover, the hydrophobicity of the obtained to-be-processed object was also favorable. The result is shown in FIG.

【0044】[実施例2]実施例1と同様の装置を用
い、酸化マグネシウム表面に強誘電性材料としてチタン
酸カルシウムを部分コーティングした誘電部材16を得
た。このセラミックスの平均誘電率は36.3であっ
た。
Example 2 Using the same apparatus as in Example 1, a dielectric member 16 was obtained in which the surface of magnesium oxide was partially coated with calcium titanate as a ferroelectric material. The average dielectric constant of this ceramic was 36.3.

【0045】この誘電部材16を用いた以外は、実施例
1と同様の条件で表面処理を行った。
A surface treatment was performed under the same conditions as in Example 1 except that this dielectric member 16 was used.

【0046】本実施例においても、実施例1と同様、チ
タン酸カルシウムが絶縁破を起こすことなく、又、得ら
れた被処理物の疎水性も良好であった。この結果は図4
に示す。
In this example, as in Example 1, the calcium titanate did not cause dielectric breakdown, and the object to be treated had good hydrophobicity. This result is shown in FIG.
Shown in

【0047】[比較例1]実施例1と同様の装置を用
い、誘電体としてアルミナ(比誘電率10)を用い実施
例1と同様の条件で表面処理を行ったところ、処理の初
期には親水化が進行して疎水性処理が実現されるまでに
かなりの時間を要した。
[Comparative Example 1] The same apparatus as in Example 1 was used, and surface treatment was performed under the same conditions as in Example 1 using alumina (relative dielectric constant: 10) as a dielectric. It took a considerable time for the hydrophilization to proceed and for the hydrophobic treatment to be realized.

【0048】[比較例2]実施例1と同様の装置を用
い、誘電体としてジルコニア(比誘電率33)を用い実
施例1と同様の条件で表面処理を行ったところ、ある程
度の疎水性処理が行えたが、数回繰り返すうちに絶縁破
壊をおこし、その後は良好な疎水化処理を施すことがで
きなかった。
[Comparative Example 2] Using the same apparatus as in Example 1 and using zirconia (dielectric constant: 33) as a dielectric, surface treatment was performed under the same conditions as in Example 1. However, dielectric breakdown occurred within several repetitions, and good hydrophobic treatment could not be performed thereafter.

【0049】[0049]

【発明の効果】以上説明したように、本発明によれば、
機械的強度の高い誘電体表面に強誘電性材料を分散又は
部分コーティングしているので、大気圧下で高電圧を印
可すると強誘電体材料が絶縁破壊をおこすことなく、し
かも発生するプラズマのエネルギー密度の高い複合バリ
ア放電が実現でき、基材の表面改質の高効率化が可能と
なる。
As described above, according to the present invention,
Since a ferroelectric material is dispersed or partially coated on the dielectric surface with high mechanical strength, when a high voltage is applied under atmospheric pressure, the ferroelectric material does not cause dielectric breakdown, and the energy of the generated plasma A high-density composite barrier discharge can be realized, and the efficiency of the surface modification of the base material can be increased.

【図面の簡単な説明】[Brief description of the drawings]

【図1】平行平板型プラズマ反応器の概略図である。FIG. 1 is a schematic view of a parallel plate type plasma reactor.

【図2】強誘電体粒子を表面に分散析出させた誘電体電
極の分散状態図である。
FIG. 2 is a dispersion diagram of a dielectric electrode in which ferroelectric particles are dispersed and deposited on the surface.

【図3】強誘電性材料を表面に部分コーティングさせた
誘電体電極の表面図である。
FIG. 3 is a surface view of a dielectric electrode having a surface partially coated with a ferroelectric material.

【図4】実施例及び比較例の結果を示すグラフである。FIG. 4 is a graph showing the results of Examples and Comparative Examples.

【符号の説明】[Explanation of symbols]

10 反応処理容器 11 ガス導入管 12 ガス排出管 20 プラズマ処理装置 21 反応容器 22 金属平板型電極 23 金属平板型電極 24A、24B 誘電部材 25 電源ユニット 26 放電部 30 被処理物 DESCRIPTION OF SYMBOLS 10 Reaction processing container 11 Gas introduction pipe 12 Gas exhaust pipe 20 Plasma processing apparatus 21 Reaction vessel 22 Metal plate type electrode 23 Metal plate type electrode 24A, 24B Dielectric member 25 Power supply unit 26 Discharge unit 30 Discharge object

フロントページの続き Fターム(参考) 4G031 AA03 AA04 AA05 AA06 AA11 AA12 AA29 BA09 CA08 4G075 AA30 BA05 CA15 CA47 DA02 DA05 EC21 FB04 FC15 Continued on the front page F-term (reference) 4G031 AA03 AA04 AA05 AA06 AA11 AA12 AA29 BA09 CA08 4G075 AA30 BA05 CA15 CA47 DA02 DA05 EC21 FB04 FC15

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 相対向する平板型の第1の電極及び第2
の電極と、これら第1及び第2の電極の間に介装される
誘電部材と、前記第1及び第2の電極の間に電位差を付
与する電位差付与手段を備え、前記第1及び第2の電極
間に大気圧下で高電圧を印加してバリア放電を発生させ
ることにより、前記第1及び第2の両電極間に保持され
る被処理体の表面の改質を行う装置において、前記誘電
部材が、誘電体からなる第1の基材と、前記誘電体より
機械的強度が相対的に小さいが誘電率が相対的に大きい
第2の基材とからなり且つ面方向に亘った平均誘電率が
30以上であることを特徴とする表面改質装置。
A first electrode and a second electrode which are opposed to each other and have a flat plate shape;
Electrodes, a dielectric member interposed between the first and second electrodes, and a potential difference applying means for applying a potential difference between the first and second electrodes. A device for modifying the surface of the object held between the first and second electrodes by applying a high voltage under atmospheric pressure between the electrodes to generate a barrier discharge; The dielectric member is composed of a first base material made of a dielectric, and a second base material having a mechanical strength relatively smaller than that of the dielectric but a relatively large dielectric constant, and is averaged in a plane direction. A surface modifying apparatus having a dielectric constant of 30 or more.
【請求項2】 請求項1において、前記第2の基材が、
酸化チタンもしくはチタン酸バリウム、チタン酸カルシ
ウム、チタン酸ストロンチウム等のチタン酸金属化合物
から選択されることを特徴とする表面改質装置。
2. The method according to claim 1, wherein the second base material is
A surface reforming device characterized by being selected from titanium oxide or a metal titanate compound such as barium titanate, calcium titanate, and strontium titanate.
【請求項3】 請求項1又は2において、前記第1の基
材が、酸化マグネシウム、酸化アルミニウム、ガラス、
及びジルコニアからなる群から選択されることを特徴と
する表面改質装置。
3. The method according to claim 1, wherein the first substrate is made of magnesium oxide, aluminum oxide, glass,
And a zirconia group.
【請求項4】 請求項1〜3の何れかにおいて、前記誘
電部材が、前記第1の基材に前記第2の基材が分散され
たものであることを特徴とする表面改質装置。
4. The surface reforming apparatus according to claim 1, wherein the dielectric member is formed by dispersing the second base material in the first base material.
【請求項5】 請求項1〜3の何れかにおいて、前記誘
電部材が、前記第1の基材からなる部材に前記第2の基
材が部分コーティングされてなるものであることを特徴
とする表面改質装置。
5. The dielectric member according to claim 1, wherein the dielectric member is obtained by partially coating the member made of the first base material with the second base material. Surface modification equipment.
【請求項6】 相対向する平板型の第1の電極及び第2
の電極と、これら第1及び第2の電極の間に介装される
誘電部材とを用い、前記第1及び第2の電極間に被処理
体を保持して、前記第1及び第2の電極の間に大気圧下
で高電圧を印加してバリア放電を発生させることによ
り、前記被処理体の表面改質を行う方法において、前記
誘電部材として、誘電体からなる第1の基材と、前記誘
電体より機械的強度が相対的に小さいが誘電率が相対的
に大きい第2の基材とからなり且つ面方向に亘った平均
誘電率が30以上のものを用いて複合バリア放電を発生
させることを特徴とする表面改質方法。
6. A flat plate-shaped first electrode and a second plate which face each other.
And a dielectric member interposed between the first and second electrodes, and holding the object to be processed between the first and second electrodes, By applying a high voltage between the electrodes under atmospheric pressure to generate a barrier discharge, in the method of modifying the surface of the object to be processed, the dielectric member may include a first substrate made of a dielectric material. A composite barrier discharge is formed by using a second base material having a mechanical strength relatively smaller than that of the dielectric but a relatively large dielectric constant and having an average dielectric constant of 30 or more in a plane direction. A surface modification method characterized by causing the surface modification.
【請求項7】 請求項6において、前記第2の基材が、
酸化チタンもしくはチタン酸バリウム、チタン酸カルシ
ウム、チタン酸ストロンチウム等のチタン酸金属化合物
であることを特徴とする表面改質方法。
7. The method according to claim 6, wherein the second base material is
A surface modification method characterized by using a metal titanate compound such as titanium oxide or barium titanate, calcium titanate, or strontium titanate.
【請求項8】 請求項6又は7において、前記第1の基
材が、酸化マグネシウム、酸化アルミニウム、ガラス、
ジルコニア等の化合物から選択されることを特徴とする
表面改質装置。
8. The method according to claim 6, wherein the first substrate is made of magnesium oxide, aluminum oxide, glass,
A surface modification device selected from compounds such as zirconia.
【請求項9】 請求項6〜8の何れかにおいて、前記第
2の基材が前記第1の基材に分散されていることを特徴
とする表面改質方法。
9. The method according to claim 6, wherein the second base material is dispersed in the first base material.
【請求項10】 請求項6〜9の何れかにおいて、前記
第2の基材が前記第1の基材からなる部材に部分コーテ
ィングされていることを特徴とする表面改質方法。
10. The surface modification method according to claim 6, wherein the second substrate is partially coated on a member made of the first substrate.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116417A (en) * 2012-12-07 2014-06-26 Fuji Xerox Co Ltd Semiconductor wafer, semiconductor light-emitting device, optical transmission device, information processing device, and method for manufacturing semiconductor light-emitting element
CN111398688A (en) * 2020-04-03 2020-07-10 湖南中科特种陶瓷技术开发有限公司 Method for detecting high dielectric constant (r) and low dielectric loss (QxF value) of ceramic

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Publication number Priority date Publication date Assignee Title
WO1999062990A1 (en) * 1998-05-29 1999-12-09 Toray Industries, Inc. Method and apparatus for producing plasma-treated sheet
JP2002114569A (en) * 2000-10-02 2002-04-16 Honda Motor Co Ltd Dielectric electrode material for plasma generation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999062990A1 (en) * 1998-05-29 1999-12-09 Toray Industries, Inc. Method and apparatus for producing plasma-treated sheet
JP2002114569A (en) * 2000-10-02 2002-04-16 Honda Motor Co Ltd Dielectric electrode material for plasma generation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116417A (en) * 2012-12-07 2014-06-26 Fuji Xerox Co Ltd Semiconductor wafer, semiconductor light-emitting device, optical transmission device, information processing device, and method for manufacturing semiconductor light-emitting element
CN111398688A (en) * 2020-04-03 2020-07-10 湖南中科特种陶瓷技术开发有限公司 Method for detecting high dielectric constant (r) and low dielectric loss (QxF value) of ceramic
CN111398688B (en) * 2020-04-03 2022-05-27 湖南中科特种陶瓷技术开发有限公司 Method for detecting high dielectric constant (epsilon r) and low dielectric loss (QxF value) of ceramic

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