JP2002231993A5 - - Google Patents

Download PDF

Info

Publication number
JP2002231993A5
JP2002231993A5 JP2001028744A JP2001028744A JP2002231993A5 JP 2002231993 A5 JP2002231993 A5 JP 2002231993A5 JP 2001028744 A JP2001028744 A JP 2001028744A JP 2001028744 A JP2001028744 A JP 2001028744A JP 2002231993 A5 JP2002231993 A5 JP 2002231993A5
Authority
JP
Japan
Prior art keywords
light receiving
light
dye
pigment
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2001028744A
Other languages
Japanese (ja)
Other versions
JP2002231993A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2001028744A priority Critical patent/JP2002231993A/en
Priority claimed from JP2001028744A external-priority patent/JP2002231993A/en
Publication of JP2002231993A publication Critical patent/JP2002231993A/en
Publication of JP2002231993A5 publication Critical patent/JP2002231993A5/ja
Abandoned legal-status Critical Current

Links

Claims (11)

受けた光の光学的エネルギーを電気的エネルギーに変換する受光領域をそれぞれ含む少なくとも2つの受光素子と、
それぞれの前記受光素子から出力された電気的信号を演算する演算回路と、
を備え、
前記少なくとも2つの受光素子は、前記受光領域のうち第1の受光領域を被覆する被覆部に染料または顔料を含有する樹脂が設けられた第1の受光素子と、前記受光領域のうち第2の受光領域を被覆する被覆部に染料または顔料を含有していない第2の受光素子とを含む半導体受光装置。
At least two light receiving elements each including a light receiving region for converting optical energy of received light into electrical energy;
An arithmetic circuit for calculating an electrical signal output from each of the light receiving elements;
With
The at least two light receiving elements include a first light receiving element in which a resin containing a dye or a pigment is provided in a covering portion that covers the first light receiving area of the light receiving area, and a second light receiving area of the second light receiving area. A semiconductor light receiving device comprising: a second light receiving element that does not contain a dye or a pigment in a covering portion that covers the light receiving region.
受けた光の光学的エネルギーを電気的エネルギーに変換する受光領域をそれぞれ含む少なくとも2つの受光素子と、
それぞれの前記受光素子から出力された電気的信号を演算する演算回路と、
を備え、
前記少なくとも2つの受光素子は、前記受光領域のうち第1の受光領域を被覆する被覆部に染料または顔料を含有する第1の受光素子と、
前記受光領域のうち第2の受光領域を被覆する被覆部に染料または顔料を含有していない第2の受光素子を含む半導体受光装置。
At least two light receiving elements each including a light receiving region for converting optical energy of received light into electrical energy;
An arithmetic circuit for calculating an electrical signal output from each of the light receiving elements;
With
The at least two light receiving elements include a first light receiving element containing a dye or a pigment in a covering portion that covers the first light receiving area of the light receiving area;
A semiconductor light receiving device including a second light receiving element that does not contain a dye or a pigment in a covering portion that covers the second light receiving region of the light receiving region.
当該半導体受光装置は2つの前記受光素子を有する受光素子対を複数有し、該複数の受光素子対の前記第1の受光素子は互いに並列に接続され、該複数の受光素子対の前記第2の受光素子は互いに並列に接続されていることを特徴とする請求項1または請求項2に記載の半導体受光装置。  The semiconductor light receiving device includes a plurality of light receiving element pairs each including the two light receiving elements, the first light receiving elements of the plurality of light receiving element pairs are connected in parallel to each other, and the second light receiving element pairs The semiconductor light receiving device according to claim 1, wherein the light receiving elements are connected in parallel to each other. 前記第1の受光素子と前記第2の受光素子とは電気的な絶縁を保ちつつ互いに隣接配置されていることを特徴とする請求項1から請求項3のいずれかに記載の半導体受光装置。  4. The semiconductor light receiving device according to claim 1, wherein the first light receiving element and the second light receiving element are arranged adjacent to each other while maintaining electrical insulation. 5. 前記第1の受光素子と前記第2の受光素子とは電気的な絶縁を保ちつつ市松模様を形成することを特徴とする請求項1から請求項3のいずれかに記載の半導体受光装置。  4. The semiconductor light receiving device according to claim 1, wherein the first light receiving element and the second light receiving element form a checkered pattern while maintaining electrical insulation. 5. 前記演算回路は、前記第1の受光素子が出力する電気信号と前記第2の受光素子が出力する電気信号との差を出力する回路であることを特徴とする請求項1から請求項5のいずれかに記載の半導体受光装置。  6. The circuit according to claim 1, wherein the arithmetic circuit is a circuit that outputs a difference between an electric signal output from the first light receiving element and an electric signal output from the second light receiving element. The semiconductor light-receiving device in any one. 前記染料または前記顔料は可視光を吸収するものであることを特徴とする請求項1から請求項6のいずれかに記載の半導体受光装置。  The semiconductor light-receiving device according to claim 1, wherein the dye or the pigment absorbs visible light. 前記染料または前記顔料は特定の波長の光を吸収するものであることを特徴とする請求項1から請求項7のいずれかに記載の半導体受光装置。  The semiconductor light-receiving device according to claim 1, wherein the dye or the pigment absorbs light having a specific wavelength. 前記染料または前記顔料は黒色であることを特徴とする請求項1から請求項8のいずれかに記載の半導体受光装置。  The semiconductor light-receiving device according to claim 1, wherein the dye or the pigment is black. 染料または顔料を含む樹脂が堆積され、かつ受けた光の光学的エネルギーを電気的エネルギーに変換する第1の受光領域および該第1の受光領域を被覆する被覆部を有し、互いに並列に接続された複数の第1の受光素子と、
前記樹脂が堆積されておらず、かつ受けた光の光学的エネルギーを電気的エネルギーに変換する第2の受光領域および該第2の受光領域を被覆する被覆部を有し、前記第1の受光素子との電気的な絶縁を保ちつつ前記第1の受光素子に隣接し、互いに並列に接続された複数の第2の受光素子と、
それぞれの前記複数の第1の受光素子から出力された電気的信号と前記複数の第2の受光素子から出力された電気的信号との差を出力する演算回路と、
を有する半導体受光装置を備えた電気機器。
A resin containing a dye or a pigment is deposited, and has a first light receiving region that converts optical energy of received light into electrical energy and a covering portion that covers the first light receiving region, and is connected in parallel to each other A plurality of first light receiving elements,
The first light receiving portion has a second light receiving region that is not deposited with the resin and converts optical energy of received light into electric energy, and a covering portion that covers the second light receiving region. A plurality of second light receiving elements adjacent to the first light receiving element and connected in parallel to each other while maintaining electrical insulation with the element;
An arithmetic circuit that outputs a difference between an electrical signal output from each of the plurality of first light receiving elements and an electrical signal output from the plurality of second light receiving elements;
An electrical apparatus provided with a semiconductor light receiving device.
染料または顔料を含有し、かつ受けた光の光学的エネルギーを電気的エネルギーに変換する第1の受光領域および該第1の受光領域を被覆する被覆部とを有し、互いに並列に接続された複数の第1の受光素子と、
染料または顔料を含有せず、かつ受けた光の光学的エネルギーを電気的エネルギーに変換する第2の受光領域および該第2の受光領域を被覆する被覆部を有し、前記第1の受光素子との電気的な絶縁を保ちつつ前記第1の受光素子に隣接し、互いに並列に接続された複数の第2の受光素子と、
それぞれの前記複数の第1の受光素子から出力された電気的信号と前記複数の第2の受光素子から出力された電気的信号との差を出力する演算回路と、
を有する半導体受光装置を備えた電気機器。
A first light-receiving region containing a dye or a pigment and converting optical energy of received light into electrical energy; and a covering portion covering the first light-receiving region, and connected in parallel to each other A plurality of first light receiving elements;
A first light receiving element that does not contain a dye or a pigment, and has a second light receiving region that converts optical energy of received light into electrical energy, and a covering portion that covers the second light receiving region; A plurality of second light receiving elements adjacent to the first light receiving element and connected in parallel to each other while maintaining electrical insulation with
An arithmetic circuit that outputs a difference between an electrical signal output from each of the plurality of first light receiving elements and an electrical signal output from the plurality of second light receiving elements;
An electrical apparatus provided with a semiconductor light receiving device.
JP2001028744A 2001-02-05 2001-02-05 Semiconductor light receiving element and electric apparatus provided therewith Abandoned JP2002231993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001028744A JP2002231993A (en) 2001-02-05 2001-02-05 Semiconductor light receiving element and electric apparatus provided therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001028744A JP2002231993A (en) 2001-02-05 2001-02-05 Semiconductor light receiving element and electric apparatus provided therewith

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005198021A Division JP2005317994A (en) 2005-07-06 2005-07-06 Semiconductor photodetector device and electrical equipment equipped with the semiconductor photodetector device

Publications (2)

Publication Number Publication Date
JP2002231993A JP2002231993A (en) 2002-08-16
JP2002231993A5 true JP2002231993A5 (en) 2005-10-27

Family

ID=18893193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001028744A Abandoned JP2002231993A (en) 2001-02-05 2001-02-05 Semiconductor light receiving element and electric apparatus provided therewith

Country Status (1)

Country Link
JP (1) JP2002231993A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332226A (en) * 2005-05-25 2006-12-07 Toshiba Corp Semiconductor photosensor device
JP2006351616A (en) * 2005-06-13 2006-12-28 Mitsumi Electric Co Ltd Semiconductor photosensor
JP4796104B2 (en) * 2008-08-29 2011-10-19 シャープ株式会社 Imaging apparatus, image analysis apparatus, external light intensity calculation method, image analysis method, imaging program, image analysis program, and recording medium
JP5185208B2 (en) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 Photodiode and photodiode array
JP5185205B2 (en) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 Semiconductor photo detector
JP5185207B2 (en) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 Photodiode array
JP5185206B2 (en) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 Semiconductor photo detector
JP5829224B2 (en) * 2009-02-24 2015-12-09 浜松ホトニクス株式会社 MOS image sensor
US8654266B2 (en) 2009-02-27 2014-02-18 Sharp Kabushiki Kaisha Optical sensor and display device provided with same
WO2010137226A1 (en) * 2009-05-28 2010-12-02 シャープ株式会社 Area sensor, and displaying device

Similar Documents

Publication Publication Date Title
EP3238274B1 (en) Stacked semiconductor chip rgbz sensor
JP6321666B2 (en) Double-sided solar cell module with back reflector
JP5651746B2 (en) Image sensing device
JP2002231993A5 (en)
DE69722976D1 (en) Solar cell module with a specific coverage of the temporal surfaces, which has an excellent resistance to moisture and an excellent transparency
JP6207321B2 (en) Optical sensor device
TW201036186A (en) IR sensing device and two-band pass sensing device
JP2003298102A5 (en)
JP2010041043A5 (en)
DK1308029T3 (en) Multi-color sensor system with retained sensor
EP0908956A3 (en) Photoelectric conversion apparatus and image sensor
EP1876648B1 (en) Method and apparatus for increasing light absorption in an image sensor using energy conversion layer
CA2030008A1 (en) Light-receiving device
DE69722041D1 (en) INTERFACE MODULE DIRECTLY CONNECTED TO THE SENSOR
CN104236714B (en) A kind of spectrum sensor of detection of a target band strength
JP2000346643A5 (en)
JP2011124522A5 (en)
TW201807833A (en) Far infrared sensor apparatus having multiple sensing element arrays inside single package
JP2007514953A5 (en)
KR101881453B1 (en) Sensor Module
CN104465685B (en) The sensor and method of color photosensor array with shielding, deep penetration and color detection optical diode
CN217641357U (en) Photoelectric sensor and control device
JPH06260625A (en) Image sensor device and its manufacture
JP2012058140A (en) Optical sensor
KR100683398B1 (en) Finger print sensing apparatus having directly contacted pixel array of image sonsor and contact emitting sensor