JP2002228933A - Scanning optical microscope - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a scanning optical microscope of a low cost which makes it possible to adequately obtain the resolution in the peripheral portion of a visual field as well. SOLUTION: The laser beam emitted from a light source 1 is reflected by a leaf spring actuator mirror 13 through a beam expander 2 and a beam splitter 3 and is condensed through a pupil projection optical system 7 and an objective lens 8 onto a specimen 8 and the light spot thereof scans the surface of the specimen 9 by the leaf spring actuator mirror 13. The reflected light thereof is detected by an optical detector 10 and the image of the specimen 9 is made observable by a monitor 11. The leaf spring actuator mirror 13 comprises two layers of electrodes including the layer provided with the mirror and at least one electrode layer is previously divided to a plurality, by which the reflecting surface of the mirror is selectively inclined in multiple directions when a voltage is impressed across the respective electrode layers.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning method in which light emitted from a light source is scanned on a sample by light deflecting means, and reflected light from the sample is detected by a photodetector to obtain a sample image. Optical microscope.

[0002]

2. Description of the Related Art A conventional scanning optical microscope generally uses two light deflectors, such as a galvanometer mirror, a polygon mirror (rotating polygon mirror), and an acousto-optic device, for emitting light emitted from a light source. In this way, the sample is two-dimensionally scanned, the reflected light is detected by a photodetector, and observed on a monitor.

A conventional example in which galvanomirrors are used as two light deflectors will be described with reference to FIG. The light emitted from the light source 1 is guided to the first galvanometer mirror 4 via the beam expander 2 and the beam splitter 3, and the light reflected there is transmitted to the second galvanometer mirror 6 via the pupil transmission optical system 5. It is led to. The light reflected by the second galvanometer mirror 6 is transmitted to the pupil projection optical system 7,
The light is condensed on the specimen 9 via the objective lens 8. The two galvanometer mirrors 4 and 6 are arranged so as to be reciprocally rotatable on axes orthogonal to each other, and are synchronously operated in a predetermined manner. Therefore, the light spot condensed on the sample 9 scans on the sample 9. Then, the light reflected on the specimen 9 is guided in the opposite direction to the above, and the light branched by the beam splitter 3 is detected by the photodetector 10 so that the image of the specimen 9 can be observed on the monitor 11. It has become. Reference numeral 12 denotes a pupil position of the objective lens.

In addition to the above-mentioned two optical deflectors, a scanning optical microscope using a proximity galvanometer mirror is also known. In this case, the proximity galvanometer mirror has a two-dimensional scanning deflection function.
In the conventional example shown in FIG. 11, a proximity galvanomirror is arranged instead of the two galvanomirrors 4 and 6 and the pupil transmission optical system 5.

[0005]

By the way, of the above-mentioned prior arts using two optical deflectors, the optical deflectors are configured to be optically conjugate to each other, so that the objective lens can be used. Since it becomes possible for the incident light to always fill the pupil of the objective lens, it is possible to suitably observe the sample image without reducing the resolving power up to the peripheral portion of the visual field. However, in this case, the optical deflector must be provided separately, and the number of lenses increases due to the provision of the pupil transmission optical system. There is a problem that it is. On the other hand, the configuration using the proximity galvanomirror has an extremely simple configuration as compared with the configuration using two optical deflectors. However, as is well known, since the proximity galvanometer mirror unitizes two mirrors close to each other, the light incident on the objective lens does not completely fill the pupil of the objective lens and sacrifices the resolution at the peripheral portion of the visual field. There is a problem that must be done.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and an object of the present invention is to provide a two-dimensional scanning optical deflector called a leaf spring actuator mirror. It is an object of the present invention to provide a low-cost, high-performance scanning optical microscope capable of suitably obtaining a resolving power in a peripheral portion of a visual field even with a small number of points.

[0007]

In order to achieve the above object, a scanning optical microscope according to the present invention comprises an objective lens for condensing light emitted from a light source on a sample, and a light source and the objective lens. A two-dimensional scanning optical deflector that is arranged between and optically scans a light spot focused on the sample,
A pupil projection optical system disposed between the two-dimensional scanning optical deflector and the pupil of the objective lens so as to be optically conjugate to each other; and a photodetector for detecting reflected light from the sample And, the two-dimensional scanning optical deflector,
A mirror is mounted or integrally formed on a thin plate member supported by a plurality of flexible beam portions, and a first layer electrode including at least one of the plurality of beam portions and the thin plate member, and At least one of the second layer electrode facing the first layer electrode is divided into a plurality of electrodes, and by controlling a potential applied between the first layer and the second layer electrode, the thin plate-shaped member is formed. The mirror is configured to be displaced so that the reflecting surface of the mirror can be directed in an arbitrary direction.

[0008] The invention is also characterized in that the light source is a laser.

[0009] A confocal pinhole optically conjugate with the sample is disposed between the leaf spring actuator mirror and the photodetector.

Further, a branching means for guiding the reflected light from the sample to the photodetector is arranged between the light source and the leaf spring actuator mirror, and a branching means is provided between the branching means and the photodetector. In addition, a confocal pinhole that is optically conjugate with the sample is arranged.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to the illustrated embodiments. First, the overall configuration of the present embodiment will be described with reference to FIG. 1. In FIG. 1, substantially the same components as those shown in FIG. 11 are denoted by the same reference numerals. In the case of the present embodiment, a laser is used as the light source 1, and a conjugate position with the pupil position 12 of the objective lens 8 is used instead of the two galvanometer mirrors 4 and 6 and the pupil transmission optical system 5 in FIG. A two-dimensional scanning optical deflector (hereinafter, referred to as a leaf spring actuator mirror) 13 having a novel configuration is disposed. Other configurations are shown in FIG.
Is the same as the conventional example. Therefore, description of them is omitted.

Although the configuration of the optical system of the present embodiment is simple as described above, the leaf spring actuator mirror 13 has the configuration and function described later, and its reflecting surface is Since the laser light can be directed in any direction, the laser light can be suitably two-dimensionally scanned on the sample 9. In the present embodiment having such a configuration, a common optically conjugate with the specimen 9 is provided between the leaf spring actuator mirror 13 and the photodetector 10, particularly between the beam splitter 3 and the photodetector 10. By arranging the focal pinhole, a more suitable image of the specimen 9 can be obtained.

Therefore, some examples of the configuration of the leaf spring actuator mirror 13 used in the above embodiment will be described. 2 to 5 show a first configuration example, FIGS. 6 and 7 show second and third configuration examples, respectively, FIGS. 8 and 9 show a fourth configuration example, and FIG. It shows a modified example. In addition, members and portions that are substantially common between the respective configuration examples are denoted by the same reference numerals, and thus redundant description thereof will be omitted.

[First Configuration Example] First, a first configuration example will be described with reference to FIGS. FIG. 2 is a perspective view showing an overall image of the leaf spring actuator mirror. This leaf spring actuator mirror is formed by bonding a first substrate 21 and a second substrate 22 together. FIG. 3 is an exploded view of the first substrate 21 and the second substrate 22. FIG. 3A is a perspective view of only the first substrate 21 viewed at the same angle as FIG. FIG. 3B shows the first substrate 21.
3 is a perspective view in which only the second substrate 22 is viewed at the same angle as in FIG. 2.

Therefore, first, the first substrate 21 is mounted on the frame member 2.
3, four beam members 24 (the reference numerals are assigned to only one beam member, and the other three are omitted), and a thin plate member 25. Among them, the frame member 23
Has a square outer shape, a square opening 23a is formed in the center, and has a rectangular shape as a whole. Also,
The four beam members 24 are made of polycrystalline silicon doped with an N-type impurity, and each have a lead wire lead portion 24a and a crank-shaped beam portion 24b. Between the frame member 23, an insulating silicon nitride film 26 is formed.

The thin plate member 25 is made of single-crystal silicon doped with an N-type impurity and has a square shape. The thin plate member 25 is disposed in the opening 23a of the frame member 23, and is integrated with the beam portion 24b of each beam member 24. It is connected to. The thin plate-like member 25 has an insulating silicon nitride film 26 formed on the surface thereof. Since the silicon nitride film 26 has four contact holes 26a, each of the beam portions 24b has Are electrically conducted, and can function as a first layer electrode together with each beam member 24. A mirror 27 of an aluminum film is formed at the center of the thin plate member 25.

In the first substrate 1 having such a structure, the beam portions 24b of each beam member 24 have flexibility.
And since each beam part 24b is formed in a crank shape so as to surround the thin plate member 25, it is possible to increase the length while having a small occupied area. Therefore, the spring constant of the beam portion 24b can be reduced, and the thin plate member 25 can be displaced with a smaller electrostatic force. Further, in this configuration example, each beam portion 24b is formed in an L shape.
Even if it is formed in a U-shape or an arc shape as described later, the same characteristics can be obtained.

On the other hand, the second substrate 22 includes a base member 28
And a fixed electrode member 29 divided into four portions functioning as a second layer electrode (the reference numeral is attached to only one fixed electrode member,
The other three are omitted). Each of the four fixed electrode members 29 is provided with a lead wire lead-out portion 29a and an L-shaped first region 2.
9b and a square second region 29c. Each first region 29b is disposed so as to face each of the beam portions 24b, and the four second regions 29c are Are arranged so as to face each of substantially four divided areas of the thin plate member 25 of FIG.

Next, the operation will be described with reference to FIG. FIG. 4A is a plan view of the first substrate 21,
FIG. 4B is a plan view of the second substrate 22. Also, both are shown at the same magnification to make it easy to grasp the overlapping relationship between them. Note that, as described above, the first
The four beam members 24 of the substrate 21 are
a, but are electrically connected via a thin plate member 25. On the other hand, the four fixed electrode members 29 of the second substrate 22 are mutually insulated and independent.

In such a connection relation, for example, when the first layer electrode is grounded and a high voltage is applied to the upper left lead wire lead-out portion 29a in FIG. 4B, the first layer electrode faces the electrode. An electrostatic attraction acts on the lower right region of the thin plate member 25 and the beam portion 24b connected to that region. At this time, if the other three electrodes of the second layer electrode are grounded, electrostatic attraction acts on the other region of the thin plate member 25 and the other three beam members 24 connected to the region. 4A, only the lower right region in FIG. 4A is drawn to the second substrate 22 side.
As a result, the thin plate member 25 is tilted with respect to the second substrate 22, the distance between the center of the thin plate member 25 and the second substrate 22 is reduced, and the reflection angle of the mirror 27 is changed. Since the amount of displacement of the thin plate member 25 depends on the value of the applied voltage, the displacement speed can be changed by changing the applied voltage.

Further, the first layer electrode is grounded, and FIG.
When a high voltage is applied to the upper right lead wire lead-out portion 29a in (b), the lower left region of the thin plate member 25 facing the electrode and the beam portion 24b connected to that region are applied. Electrostatic attraction acts. At this time, if the other three electrodes of the second layer electrode are grounded, the other region of the thin plate member 25 and the other three beam members 2 connected to the region
Since no electrostatic attraction acts on 4, the thin plate member 25 is
Only the lower left area in FIG. 4A is drawn to the second substrate 22 side. Therefore, the thin plate member 25
Is tilted with respect to the second substrate 22 and the thin plate member 25
The distance between the center of the second substrate 22 and the second substrate 22 is also reduced, and the mirror 27 moves its reflecting surface by a predetermined amount at a predetermined speed corresponding to a change in the applied voltage in a direction different from the above case by 90 degrees. Will be inclined.

As can be seen from the description of the operation, if the reflecting surface of the mirror 27 is inclined in two directions different by 90 degrees and only two-dimensional scanning with laser light is performed, the second substrate 22
Out of the four electrodes provided above, two other electrodes other than those described above are not required. However, according to this configuration example, any two adjacent electrodes can be selected from the four electrodes. For example, it is possible to select the initial position of scanning or change the scanning direction. This is advantageous if you want to. When the mirror 27 is tilted in the first direction, a high voltage is applied to the upper two lead wire lead-out portions 29a in FIG. 4B, and the mirror 27 is tilted in a second direction different from that by 90 degrees. In this case, a high voltage may be applied to the two lead wire lead-out portions 29a on the left side in FIG. 4B.

In this configuration example, a first region 29b and a second region 29c are formed in the fixed electrode member 29, and a region of the thin plate member 25 to be displaced and a beam portion 24b connected to the region are formed. Since the electrostatic attraction is applied to both, a larger electrostatic attraction can be obtained than when the first region 29b is not provided. As a result, the leaf spring actuator mirror can be reduced in size and driven at a low voltage. ing. However, even if the electrostatic attraction is applied only to the thin plate member 25 or only the beam portion 24b, it is possible to perform a certain operation.

Next, a manufacturing process of the first substrate 21 will be described with reference to FIG. 5, and FIG. 5 (a) corresponds to a view of a section taken along the line AA of FIG. 4 (a). And FIG.
It corresponds to the drawing which cut | disconnected and saw the part of BB of (a). First, for a 300 μm thick P-type silicon substrate,
An N-type diffusion layer is formed at a position corresponding to the thin plate member 25, and a 400-nm-thick silicon nitride film is formed on both surfaces. Thereafter, of the silicon nitride film formed on the back side (the lower side in the figure), the opening 23a of the frame member 23 is formed.
The contact hole 26a is opened in the silicon nitride film formed on the surface side. The cross-sectional shape thus formed is shown in FIG.
Is shown in

Thereafter, low pressure chemical vapor deposition (LPCV)
4D, a polycrystalline silicon layer having a thickness of 800 nm is formed on the front surface side, and FIG.
As shown in (1), patterning is performed so that four beam members 24 can be obtained. The cross-sectional shape thus formed is shown in FIG. Then, an aluminum film serving as the above-mentioned mirror 27 is formed on the N-type diffusion layer by a method such as sputtering. The cross-sectional shape thus formed is (3) in FIG.

Next, a surface protective film made of an alkali-resistant material is formed on the surface side, and then a state in which a positive voltage is applied to the N-type diffusion layer (polycrystalline electrically conductive with the N-type diffusion layer). Then, the P-type silicon substrate is removed from the back side by electrochemical etching in a strong alkaline aqueous solution. In this case, the P-type silicon substrate is formed on the back side in a region corresponding to the frame member 23. Since the silicon nitride film functions as a mask, etching proceeds only in a region where the silicon nitride film is not formed. Then, the etching stops near the junction interface in the region where the N-type diffusion layer is formed, and stops in the other regions when the silicon nitride film on the surface side is exposed. The cross-sectional shape at that stage is shown in FIG. Thereafter, the surface protective film is removed, and the silicon nitride films on the front and back sides that are exposed as viewed from the back surface side are removed by reactive ion etching, so that the cross-sectional shape shown in FIG. The first substrate 21 is obtained.

According to such a manufacturing method, since the semiconductor manufacturing technology can be applied in all the steps, it is very convenient to manufacture the minute first substrate 21 at low cost. Further, since the thin plate member 25 can be formed by electrochemical etching of single crystal silicon, the internal stress is small, the flatness is high, and the precision is high as compared with the case where a thin film is formed on a predetermined substrate. Can be obtained. In the above description of the manufacturing process, only one first substrate 21 is illustrated and described. However, in practice, many first substrates 21 are simultaneously processed on one silicon substrate. Needless to say.

[Second Configuration Example] In this configuration example, only the configuration of the first substrate 21 in the first configuration example is partially different, and the configuration of the second substrate 22 and the bonding configuration of the two are exactly the same. . Therefore, FIG. 6 shows only the first substrate 21 in the same manner as FIG. 3A. Unlike the first configuration example, the thin plate member 25 of the second configuration example is made of the same polycrystalline silicon as the beam member 24. And
In this case, if the thin plate member 25 is formed to have the same thickness as the beam member 24, the thin plate member 25 is also bent when the beam member 24 is bent by the electrostatic attraction. The thin plate member 25 is formed thicker on the surface side than the beam member 24.

In this configuration example, the internal stress of the polycrystalline silicon causes a slight distortion in the thin plate member 25. However, as in the first configuration example, the contact hole 26a is opened, Since the step of forming the mold diffusion layer can be omitted, it is a preferable configuration when the surface accuracy is not required much in the specification, and it can be said that the cost is extremely advantageous. Note that in both the first configuration example and the present configuration example, expressions such as “beam member” and “thin plate member” are used. However, as can be understood from the above description, these expressions are used. It can be said that different portions of one member that is the first layer electrode are expressed, and this is the same in each configuration example and each modification example described below.

[Third Configuration Example] This configuration example is shown in the perspective view of FIG. 7, and FIG. 7A shows the first substrate 21 of this configuration example.
7A is shown in the same manner as in FIG. 3A, and FIG. 7B shows the second substrate 22 of this configuration example in FIG.
This is shown in the same manner as (c). As described above, the present configuration example is basically almost the same as the first configuration example, except that a circular through hole is provided at the center of the thin plate member 25 and at the center of the base member 28 opposed thereto. Hole 25
a and 28a are different from the first configuration example. Therefore, when manufacturing the first substrate 21 by using the semiconductor manufacturing technology, it is sufficient that the N-type diffusion layer is not formed in the region corresponding to the through hole 26a in the manufacturing process described in the first configuration example. Therefore, the step of forming an aluminum film is also eliminated.

In this configuration, optical elements such as a lens, a transmission type diffraction grating, and a pinhole plate are originally mounted in the through-hole 25a of the thin plate member 25, and an optical unit with an actuator other than the two-dimensional scanning type optical deflector is provided. In the case where the present invention is configured as a leaf spring actuator mirror as in the present invention, a separately manufactured mirror (not shown) is attached to the thin plate member 2 by bonding or the like.
5. It should be noted that even in such a configuration, the operation is performed according to the case of the first configuration example.

[Fourth Configuration Example] In the first configuration example described above, the frame member 23 made of single crystal silicon and the thin plate member 25 are connected by the beam member 24 made of polycrystalline silicon. In the case of this configuration example, as shown in FIG. 8, all three of them are made of single crystal silicon,
An opening 26b is formed in the silicon nitride film 26 near the connecting portion between the frame member 23 and the four beam portions 24b, and an aluminum film is formed on the exposed surface of the frame member 23, so that the lead wire lead-out portion is formed. And

Therefore, the manufacturing process of this configuration example will be described with reference to FIG. First, a deep N-type diffusion layer is formed on a P-type silicon substrate having a thickness of 300 μm corresponding to the thin plate member 25, and a shallow N-type diffusion layer is formed on a portion corresponding to the beam portion 24b of the beam member 24. And a thickness of 4 on both sides
A 00 nm silicon nitride film is formed. After that, of the silicon nitride film formed on the back side (the lower side in the figure),
A region corresponding to the opening 23a of the frame member 23 is removed.
Further, since the shallow N-type diffusion layer extends to the frame member 23 at the connection portion between the frame member 23 and the beam portion 24b, the silicon nitride film 26 on the surface side covering the extension region is provided.
Then, four openings 26b are formed by photolithography.
Is formed, and a part of the frame member 23 is exposed. Thereafter, an aluminum film is further formed on the silicon nitride film on the upper surface of the deep N-type diffusion layer and the above-mentioned four exposed portions of the frame member 23 by sputtering and photolithography, and a mirror 27 and a lead wire lead-out portion are formed. . The cross-sectional shape at that time is shown in FIG.

Next, a surface protective film made of an alkali-resistant material is formed on the front surface side, and the P-type silicon substrate is removed from the back side in a strong alkaline aqueous solution while a positive voltage is applied to the N-type diffusion layer. Although the silicon nitride film is formed on the back surface in the region corresponding to the frame member 23, the etching proceeds only in the region where the silicon nitride film is not formed. Then, in the region where the N-type diffusion layer is formed, the etching stops near the junction interface, and in other regions, stops when the silicon nitride film on the surface side is exposed. ). Thereafter, the surface protective film is removed, and the silicon nitride films on the front and back that are exposed when viewed from the back surface side are removed by reactive ion etching to obtain the shape shown in FIG. First substrate 21 of this configuration example
Is obtained.

Note that, strictly speaking, the thickness of the single crystal silicon remaining in the above-mentioned etching step is not at the junction surface of the N-type diffusion layer but at the end of the depletion layer extending therefrom by applying a bias voltage. Because it will be close to
Prior to the formation of a shallow N-type diffusion layer, if the concentration is increased by diffusing a P-type impurity such as boron in the vicinity thereof,
4b can be further reduced in thickness.

As a practical matter, polycrystalline silicon is more suitable for thinning the beam portion 24b and reducing the spring constant. However, depending on the specification, the configuration example can omit the polycrystalline silicon forming step as in the first configuration example, which is advantageous in cost.
Further, when the four beam portions 24b are formed of single-crystal silicon as in the present configuration example, the breaking strength is higher than that of the case where the four beam portions 24b are formed of polycrystalline silicon. This is advantageous when it is desired to displace or when it is desired to displace the thin plate member 25 on which a relatively heavy mirror is mounted.

[Modification] Next, a modification of the first substrate 21 shown in each of the above configuration examples will be described with reference to FIG. However, the configuration of the first substrate 21 of each configuration example has already been described in detail. Therefore, in FIGS. 10A and 10B, only the pattern of the first layer electrode constituted by the beam member 24 and the thin plate member 25 is shown in a plan view. 10A is one in which only the four corners are formed in an arc shape. However, in this case, concentration of stress can be avoided at the four corners, which is advantageous in manufacturing. 10B is advantageous when the first substrate 21 has a circular planar shape.

As described above, in the configuration of the leaf spring actuator mirror, various deformation patterns can be considered according to the required specifications. Further, in the case of each of the above configuration examples and modifications, the first layer electrode has been described as not being divided, but may be divided into a plurality of pieces like the second layer electrode. Even if the first layer electrode is divided,
The case where the second layer electrode is divided and the case where the second layer electrode is not divided are considered. In addition, in the description of each of the above configuration examples, the case of manufacturing using a semiconductor manufacturing technique is mainly described, but a part or all of the manufacturing may be performed by other means and unitized. Therefore, even though the term “member” is used in the description of the claims, they may or may not be independent parts.

In the above description of each configuration example, a method of manufacturing the second substrate 22 is not described, and an example of the manufacturing method will be briefly described here. First,
An insulating film such as a silicon oxide film is formed on a P-type silicon substrate, and then an aluminum thin film is formed on the upper surface of the insulating film by a method such as sputtering, and is patterned by ordinary photolithography to form electrodes. I do. Also,
In the case of manufacturing in this manner, usually, a large number of chips are simultaneously formed on a large silicon wafer and divided into individual chips by dicing.
This is the same as the case of the substrate 21. When the through-holes 25a and the through-holes 28a as shown in FIG. 7 are provided, they are formed before dicing by anisotropic etching such as RIE (Reactive Ion Etching) or excimer laser ablation. To

As described above, the present invention has the following features in addition to the features described in the claims.

(1) A leaf spring actuator mirror is disposed such that a plurality of beam members having a crank-shaped or curved-shaped flexible beam portion are mounted on or integrally formed with a mirror, and the thin plate-shaped member is surrounded. A first substrate connected to the frame member and at least one of the thin plate member and the beam member serving as a first layer electrode; and a second layer electrode in a region facing the first layer electrode. And a second substrate that is joined to the frame member.
2. The device according to claim 1, wherein the thin plate-shaped member is displaced by changing a potential applied between electrodes of the layer, and the reflecting surface of the mirror can be directed in an arbitrary direction. 3. Scanning optical microscope.

(2) The method according to (1) or (1), wherein the first layer electrode portion is divided into a plurality of portions which are electrically separated and can set different potentials from each other. Scanning optical microscope.

(3) The second layer electrode portion is divided into a plurality of portions which are electrically separated and can set different potentials from each other. The scanning optical microscope according to any one of the above.

(4) The scanning optical system according to any one of (1) to (3), wherein the frame member and the thin plate member are formed by processing an integrated single crystal semiconductor substrate. microscope.

(5) The frame member is formed by cutting a semiconductor substrate, and the thin plate member is a thin plate portion selectively left from the semiconductor substrate by electrochemical etching. The scanning optical microscope according to (4).

(6) The frame member, the beam member and the thin plate member are
The scanning optical microscope according to any one of the above (1) to (3), which is formed by processing an integrated single crystal semiconductor substrate.

(7) The frame member is formed by cutting a semiconductor substrate, and the thin plate member and the beam member are thin plate portions selectively left by electrochemical etching from the semiconductor substrate. The scanning optical microscope according to (6), wherein the beam member is thinner than the thin plate portion.

(8) The second layer electrode portion is divided into a plurality of electrodes, and these are arranged at positions facing the beam portions of each beam member. The scanning optical microscope according to 1).

(9) The divided electrode of the second layer electrode portion is
The scanning optical microscope according to the above (8), wherein each of the scanning optical microscopes extends to the vicinity of the connecting portion of the thin plate member.

(10) The scanning optical microscope according to (1) or (1), wherein a through-hole is provided in the thin plate-like member, and a mirror is integrally formed or mounted therein.

(11) The scanning optical microscope according to the above (10), wherein the second substrate is provided with a through hole in a region facing the through hole provided in the thin plate member. .

Finally, definitions of terms used in the present invention will be described.

The optical device is a device including an optical system or an optical element. The optical device may not function alone. That is, it may be a part of the device.

The optical device includes an imaging device, an observation device, a display device, a lighting device, a signal processing device, and the like.

Examples of the imaging device include a film camera,
There are a digital camera, a robot eye, an interchangeable lens digital single-lens reflex camera, a television camera, a moving image recording device, an electronic moving image recording device, a camcorder, a VTR camera, and an electronic endoscope. Digital camera, card type digital camera, TV camera,
A VTR camera, a moving image recording camera, and the like are all examples of an electronic imaging device.

Examples of the observation device include a microscope, a telescope,
There are glasses, binoculars, loupes, fiberscopes, finders, viewfinders and the like.

Examples of the display device include a liquid crystal display, a viewfinder, a game machine (PlayStation manufactured by Sony Corporation), a video projector, a liquid crystal projector, and a head mounted image display device (head mo).
There are undisplayed display (HMD), PDA (portable information terminal), and mobile phone.

Examples of the illuminating device include a camera strobe, an automobile headlight, an endoscope light source, a microscope light source, and the like.

Examples of the signal processing device include a mobile phone, a personal computer, a game machine, an optical disk reading / writing device,
There are arithmetic units for optical computers and the like.

The image pickup device refers to, for example, a CCD, an image pickup tube, a solid-state image pickup device, a photographic film and the like. Also, the parallel plane plate is included in one of the prisms. The change in the observer includes a change in diopter. To change the subject,
This includes changes in the distance of the object to be the subject, movement of the object, movement of the object, vibration, shake of the object, and the like.

The definition of the extended surface is as follows. In addition to spherical, flat, and rotationally symmetric aspheric surfaces, spherical surfaces decentered with respect to the optical axis, flat surfaces, rotationally symmetric aspheric surfaces, or aspheric surfaces having a symmetric surface, aspheric surfaces having only one symmetric surface, and non-symmetric surfaces having no symmetric surface It may have any shape such as a spherical surface, a free-form surface, a non-differentiable point, or a surface having a line. The surface may be any one of a reflecting surface and a refracting surface as long as it can have some effect on light. In the present invention, these are collectively called an extended curved surface.

The optical characteristics variable optical element includes a variable focus lens, a variable mirror, a polarizing prism having a variable surface shape, a vertical angle variable prism, a variable diffractive optical element having a variable light deflecting function, that is, a variable HOE, a variable DOE, and the like.

The variable focus lens includes a variable lens whose focal length does not change and the amount of aberration changes. The same applies to the variable mirror. In short, an optical element that can change the light deflecting action such as light reflection, refraction, and diffraction is called an optical characteristic variable optical element.

The information transmitting device includes a remote control such as a mobile phone, a fixed telephone, a game machine, a television, a radio and a stereo, a personal computer, a keyboard and a mouse of the personal computer.
Refers to a device capable of inputting and transmitting some information such as a touch panel. It also includes a television monitor equipped with an imaging device, a monitor of a personal computer, and a display. The information transmitting device is included in the signal processing device.

[0065]

As is apparent from the above description, since the scanning optical microscope of the present invention uses a leaf spring actuator mirror as the two-dimensional scanning optical deflector, the configuration of the optical system is very simple. In addition, there is a feature that the manufacturing is easy and the cost is advantageous. In particular, since the pupil of the mirror and the objective lens are completely conjugated, a feature that the resolution at the peripheral portion of the visual field can be suitably obtained. are doing.

[Brief description of the drawings]

FIG. 1 is a configuration diagram illustrating an optical system according to an embodiment.

FIG. 2 is a perspective view showing a first configuration example of a leaf spring actuator mirror in the embodiment.

FIG. 3 is an exploded perspective view showing a first configuration example of a leaf spring actuator mirror, and FIG.
FIG. 3B shows the substrate viewed in the same manner as FIG.
3 shows the first substrate turned upside down, and FIG. 3C shows the second substrate viewed in the same manner as FIG.

FIG. 4 is a plan view for explaining the operation of the first configuration example of the leaf spring actuator mirror, and FIG.
FIG. 4B shows a substrate, and FIG. 4B shows a second substrate.

FIG. 5 is a cross-sectional view for explaining a manufacturing process of the first configuration example of the leaf spring actuator mirror. FIG. 5A corresponds to a cross section taken along line AA of FIG. FIG.
(B) corresponds to a drawing in cross section taken along line BB of FIG. 4 (a).

FIG. 6 is a perspective view showing a first substrate of a second configuration example of the leaf spring actuator mirror.

FIGS. 7A and 7B are perspective views showing a third configuration example of the leaf spring actuator mirror. FIG. 7A shows a first substrate, and FIG. 7B shows a second substrate. Things.

FIG. 8 is a perspective view showing a first substrate of a fourth configuration example of the leaf spring actuator mirror.

FIG. 9 is a cross-sectional view for explaining a manufacturing process of the fourth configuration example of the leaf spring actuator mirror.

FIGS. 10A and 10B are plan views for explaining a modification of the first substrate in each configuration example.

FIG. 11 is a configuration diagram showing a conventional optical system.

[Description of Signs] 1 light source 2 beam expander 3 beam splitter 4,6 galvanometer mirror 5 pupil transmission optical system 7 pupil projection optical system 8 objective lens 9 sample 10 photodetector 11 monitor 12 objective lens pupil position 13 leaf spring actuator Mirror 21 First substrate 22 Second substrate 23 Frame member 23a, 26b Opening 24 Beam member 24a, 29a Lead wire lead-out portion 24b Beam portion 25 Thin plate member 25a, 28a Through hole 26 Silicon nitride film 26a Contact hole 27 Mirror 28 Base Member 29 Fixed electrode member 29b First region 29c Second region

Claims (4)

[Claims] 1. An objective lens for condensing light emitted from a light source on a specimen, and optically scanning a light spot disposed between the light source and the objective lens and condensed on the specimen. A two-dimensional scanning optical deflector, a pupil projection optical system disposed between the two-dimensional scanning optical deflector and the pupil of the objective lens so as to be optically conjugate to each other, and the sample A two-dimensional scanning optical deflector, wherein the mirror is mounted on or integrated with a thin plate member supported by a plurality of flexible beams. And at least one of a first layer electrode composed of at least one of the plurality of beam portions and the thin plate member and a second layer electrode facing the first layer electrode is divided into a plurality of electrodes. By controlling the potential applied between the electrodes of the first layer and the second layer, A scanning optical microscope, wherein the thin plate member is displaced so that the reflection surface of the mirror can be directed in an arbitrary direction. 2. The scanning optical microscope according to claim 1, wherein the light source is a laser. 3. A confocal pinhole, which is optically conjugate with the sample, is arranged between the two-dimensional scanning optical deflector and the photodetector. 3. The scanning optical microscope according to 2. 4. A branching means is disposed between the light source and the two-dimensional scanning optical deflector, and is optically conjugate with the sample between the branching means and the photodetector. 2. A confocal pinhole is arranged.
Or the scanning optical microscope according to 2.