JP2002221678A5 - - Google Patents

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JP2002221678A5
JP2002221678A5 JP2001016899A JP2001016899A JP2002221678A5 JP 2002221678 A5 JP2002221678 A5 JP 2002221678A5 JP 2001016899 A JP2001016899 A JP 2001016899A JP 2001016899 A JP2001016899 A JP 2001016899A JP 2002221678 A5 JP2002221678 A5 JP 2002221678A5
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Prior art keywords
optical switching
switching device
reflector
semi
distance
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JP2001016899A
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JP2002221678A (en
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Priority to JP2001016899A priority Critical patent/JP2002221678A/en
Priority claimed from JP2001016899A external-priority patent/JP2002221678A/en
Publication of JP2002221678A publication Critical patent/JP2002221678A/en
Publication of JP2002221678A5 publication Critical patent/JP2002221678A5/ja
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Claims (15)

半透過体と反射体との距離を変えることによりオンオフおよび/または色を制御可能な複数の光スイッチング素子を有する光スイッチングデバイスであって、
前記半透過体が形成された第1の基板と、
前記反射体が、該反射体を駆動可能なアクチュエータに重ねて形成された第2の基板とを有する光スイッチングデバイス。
An optical switching device having a plurality of optical switching elements capable of controlling on / off and / or color by changing a distance between a semi-transmissive body and a reflective body,
A first substrate on which the translucent body is formed;
An optical switching device, wherein the reflector includes a second substrate formed on an actuator capable of driving the reflector.
請求項1において、当該光スイッチング素子から出射される光の波長λに対し、前記反射体は、前記半透過体との距離dが以下の式の値となる位置に少なくとも稼動可能である光スイッチングデバイス。
d=nλ/2
ただし、nは1以上の整数である。
2. The optical switching according to claim 1, wherein the reflector is operable at least at a position where a distance d between the reflector and the semi-transmissive body is a value of the following expression with respect to a wavelength λ of light emitted from the optical switching element. device.
d = nλ / 2
However, n is an integer of 1 or more.
請求項1において、前記第1の基板は透明基板であり、その一方の面に前記半透過体となる半透過層が複数の前記光スイッチング素子にわたり形成されている光スイッチングデバイス。2. The optical switching device according to claim 1, wherein the first substrate is a transparent substrate, and a semi-transmissive layer serving as the semi-transmissive body is formed over the plurality of the optical switching elements on one surface thereof. 請求項1において、前記アクチュエータは、静電アクチュエータである光スイッチングデバイス。The optical switching device according to claim 1, wherein the actuator is an electrostatic actuator. 請求項1において、前記半透過体および反射体の距離が一定の値以下にならないようにする微小突起が、前記半透過体および反射体の少なくともいずれかに形成されている光スイッチングデバイス。2. The optical switching device according to claim 1, wherein a minute protrusion that prevents a distance between the semi-transmissive body and the reflector from being equal to or less than a predetermined value is formed on at least one of the semi-transmissive body and the reflective body. 請求項5において、当該光スイッチング素子から出射される光の波長λに対し、前記微小突起により制限される前記半透過体および反射体との距離d0が以下の式の値となる光スイッチングデバイス。
d0=nλ/4
ただし、nは1以上の整数である。
6. The optical switching device according to claim 5, wherein a distance d0 between the semitransparent body and the reflector, which is limited by the minute protrusions, is a value of the following expression with respect to the wavelength λ of the light emitted from the optical switching element.
d0 = nλ / 4
However, n is an integer of 1 or more.
請求項5において、前記半透過体および反射体の距離が一定の値以上にならないようにするストッパを備えている光スイッチングデバイス。6. The optical switching device according to claim 5, further comprising a stopper that prevents the distance between the translucent body and the reflector from exceeding a certain value. 請求項7において、前記微小突起により制限された位置から前記ストッパにより制限までの距離yが、当該光スイッチング素子から出射される光の波長λに対し、以下の式の値となる光スイッチングデバイス。
y=nλ/4
ただし、nは1以上の整数である。
8. The optical switching device according to claim 7, wherein the distance y from the position limited by the minute protrusions to the limit by the stopper is a value of the following expression with respect to the wavelength λ of the light emitted from the optical switching element.
y = nλ / 4
However, n is an integer of 1 or more.
請求項2において、異なる前記波長λに対応する、異なる前記距離dを備えた少なくとも3種類の前記スイッチング素子が配列されている光スイッチングデバイス。3. The optical switching device according to claim 2, wherein at least three types of the switching elements having different distances d corresponding to the different wavelengths λ are arranged. 請求項2において、前記アクチュエータは、異なる前記波長λに対応する、少なくとも3種類の異なる前記距離dに前記反射体を駆動可能な光スイッチングデバイス。3. The optical switching device according to claim 2, wherein the actuator can drive the reflector to at least three different distances d corresponding to the different wavelengths λ. 請求項10において、前記アクチュエータは静電駆動型であり、前記反射体を駆動可能な距離xの異なる少なくとも3種類の電極ペアを備えている光スイッチングデバイス。11. The optical switching device according to claim 10, wherein the actuator is of an electrostatic drive type and includes at least three types of electrode pairs having different distances x capable of driving the reflector. 半透過体と反射体との距離を変えることによりオンオフおよび/または色を制御可能な複数の光スイッチング素子を有する光スイッチングデバイスの製造方法であって、
第1の基板に前記半透過体を形成する第1の工程と、
第2の基板に、前記反射体を、該反射体を駆動可能なアクチュエータに重ねて形成する第2の工程と、
前記第1および第2の基板を前記半透過体と前記反射体とが対面するように組み合わせる工程とを有する光スイッチングデバイスの製造方法。
A method of manufacturing an optical switching device having a plurality of optical switching elements that can be turned on and off and / or controlled in color by changing the distance between a semi-transparent body and a reflector,
A first step of forming the translucent body on a first substrate;
A second step of forming, on the second substrate, the reflector overlaid on an actuator capable of driving the reflector;
A method of manufacturing an optical switching device, comprising: combining the first and second substrates so that the transflector and the reflector face each other.
請求項12において、前記第2の工程では、半導体回路を備えた前記第2の基板上に、複数の前記アクチュエータが配列されたアクチュエータ層と、各々の前記アクチュエータに対応する複数の前記反射体が配列された反射層とを積層する光スイッチングデバイスの製造方法。13. The second step according to claim 12, wherein in the second step, an actuator layer in which a plurality of the actuators are arranged on the second substrate provided with a semiconductor circuit, and a plurality of the reflectors corresponding to each of the actuators. A method of manufacturing an optical switching device in which an array of reflective layers is laminated. 請求項1ないし11のいずれかに記載の光スイッチングデバイスを有する直視型の画像表示装置。A direct view type image display apparatus comprising the optical switching device according to claim 1. 請求項1ないし11のいずれに記載の光スイッチングデバイスと、
この光スイッチングデバイスに光を入射可能な光源と、
前記光スイッチングバイスにより変調された光をスクリーン上に投影するレンズシステムとを有する画像表示装置。
An optical switching device according to any one of claims 1 to 11,
A light source capable of entering light into the optical switching device;
And a lens system that projects light modulated by the optical switching device onto a screen.
JP2001016899A 2001-01-25 2001-01-25 Optical switching device, method of manufacturing for the same and image display device Withdrawn JP2002221678A (en)

Priority Applications (1)

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JP2001016899A JP2002221678A (en) 2001-01-25 2001-01-25 Optical switching device, method of manufacturing for the same and image display device

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JP2001016899A JP2002221678A (en) 2001-01-25 2001-01-25 Optical switching device, method of manufacturing for the same and image display device

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JP2002221678A JP2002221678A (en) 2002-08-09
JP2002221678A5 true JP2002221678A5 (en) 2005-03-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4003063B2 (en) * 2002-09-04 2007-11-07 セイコーエプソン株式会社 Mirror device, optical switch, electronic device, and mirror device driving method
US6963440B2 (en) * 2004-02-13 2005-11-08 Hewlett-Packard Development Company, L.P. System and method for driving a light delivery device
US7476327B2 (en) 2004-05-04 2009-01-13 Idc, Llc Method of manufacture for microelectromechanical devices
US7372613B2 (en) 2004-09-27 2008-05-13 Idc, Llc Method and device for multistate interferometric light modulation
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7583429B2 (en) 2004-09-27 2009-09-01 Idc, Llc Ornamental display device
US7289259B2 (en) 2004-09-27 2007-10-30 Idc, Llc Conductive bus structure for interferometric modulator array
US7944599B2 (en) 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7302157B2 (en) 2004-09-27 2007-11-27 Idc, Llc System and method for multi-level brightness in interferometric modulation
US7564612B2 (en) 2004-09-27 2009-07-21 Idc, Llc Photonic MEMS and structures
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US7527995B2 (en) 2004-09-27 2009-05-05 Qualcomm Mems Technologies, Inc. Method of making prestructure for MEMS systems
US7420725B2 (en) 2004-09-27 2008-09-02 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US7304784B2 (en) 2004-09-27 2007-12-04 Idc, Llc Reflective display device having viewable display on both sides
US7630119B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7884989B2 (en) 2005-05-27 2011-02-08 Qualcomm Mems Technologies, Inc. White interferometric modulators and methods for forming the same
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US7471442B2 (en) 2006-06-15 2008-12-30 Qualcomm Mems Technologies, Inc. Method and apparatus for low range bit depth enhancements for MEMS display architectures
US7835061B2 (en) 2006-06-28 2010-11-16 Qualcomm Mems Technologies, Inc. Support structures for free-standing electromechanical devices
US7527998B2 (en) 2006-06-30 2009-05-05 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US7403180B1 (en) * 2007-01-29 2008-07-22 Qualcomm Mems Technologies, Inc. Hybrid color synthesis for multistate reflective modulator displays
US8115987B2 (en) 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
US7916378B2 (en) 2007-03-08 2011-03-29 Qualcomm Mems Technologies, Inc. Method and apparatus for providing a light absorbing mask in an interferometric modulator display
US7643202B2 (en) 2007-05-09 2010-01-05 Qualcomm Mems Technologies, Inc. Microelectromechanical system having a dielectric movable membrane and a mirror
US7715085B2 (en) 2007-05-09 2010-05-11 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane and a mirror
US7782517B2 (en) 2007-06-21 2010-08-24 Qualcomm Mems Technologies, Inc. Infrared and dual mode displays
US7630121B2 (en) 2007-07-02 2009-12-08 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
EP2183623A1 (en) 2007-07-31 2010-05-12 Qualcomm Mems Technologies, Inc. Devices for enhancing colour shift of interferometric modulators
US7847999B2 (en) 2007-09-14 2010-12-07 Qualcomm Mems Technologies, Inc. Interferometric modulator display devices
US7773286B2 (en) 2007-09-14 2010-08-10 Qualcomm Mems Technologies, Inc. Periodic dimple array
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
JP5209727B2 (en) 2007-10-19 2013-06-12 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Display with integrated photovoltaic device
JP2011504243A (en) 2007-10-23 2011-02-03 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Adjustable transmissive MEMS-based device
US7715079B2 (en) 2007-12-07 2010-05-11 Qualcomm Mems Technologies, Inc. MEMS devices requiring no mechanical support
US8164821B2 (en) 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7612933B2 (en) 2008-03-27 2009-11-03 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US7898723B2 (en) 2008-04-02 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical systems display element with photovoltaic structure
US7969638B2 (en) 2008-04-10 2011-06-28 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
US7791783B2 (en) 2008-06-25 2010-09-07 Qualcomm Mems Technologies, Inc. Backlight displays
US7768690B2 (en) 2008-06-25 2010-08-03 Qualcomm Mems Technologies, Inc. Backlight displays
US7746539B2 (en) 2008-06-25 2010-06-29 Qualcomm Mems Technologies, Inc. Method for packing a display device and the device obtained thereof
US8023167B2 (en) 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US8270056B2 (en) 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
WO2010138763A1 (en) 2009-05-29 2010-12-02 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
US8270062B2 (en) 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
JP5593671B2 (en) * 2009-10-05 2014-09-24 セイコーエプソン株式会社 Wavelength variable interference filter, colorimetric sensor, colorimetric module
JP5549222B2 (en) * 2009-12-28 2014-07-16 株式会社ニコン Spatial light modulator, exposure apparatus and manufacturing method thereof
WO2012024238A1 (en) 2010-08-17 2012-02-23 Qualcomm Mems Technologies, Inc. Actuation and calibration of a charge neutral electrode in an interferometric display device
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display

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