JP2002217177A - Plasma device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To correct the heterogeneity of the distribution of electric field while the strength of the electric field is maintained. SOLUTION: The equipment provides a substrate stand having a mounting face which mounts substrate, a chamber 12 which contains the substrate stand therein and an antenna which supplies electric field in the chamber 12. The shape of the cross section parallel to the mounting face of the inner circumference plane of the chamber 12 has unevenness.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma apparatus for generating plasma by an electromagnetic field supplied from an antenna into a chamber.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices and flat panel displays, plasma devices are frequently used to perform processes such as formation of oxide films, crystal growth of semiconductor layers, etching, and ashing. Among these plasma devices, there is a high-frequency plasma device that supplies a high-frequency electromagnetic field into a chamber using an antenna and generates high-density plasma by the electromagnetic field. This high-frequency plasma apparatus has a feature that it can be used widely because it can stably generate plasma even when the pressure of the plasma gas is relatively low.

FIG. 7 is a diagram showing an example of the configuration of a conventional high-frequency plasma device. In this figure, a vertical cross-sectional structure is shown for a part of the configuration. FIG. 8 shows the VI shown in FIG.
It is sectional drawing which shows the cross section of the II-VIII 'line direction. As shown in FIG. 7, the plasma apparatus includes a chamber 110 for performing plasma processing on a substrate 121, and a radial antenna 130 for supplying a high-frequency electromagnetic field F for exciting plasma in the chamber 110. ing.
The chamber 110 includes a cylindrical processing container 111 having an open top, and an annular shielding member 112 disposed on a side wall of the processing container 111. A substrate table 122 is fixed to the bottom surface of the processing container 111, and the substrate 121 is disposed on a mounting surface of the substrate table 122. A nozzle 11 for plasma gas supply is provided on a side wall of the processing container 111.
7 is provided, and an exhaust port 116 for evacuation is provided at the bottom of the processing container 111. The upper opening of the processing container 111 prevents plasma from leaking to the outside from there.
It is closed by the dielectric plate 113.

[0004] A radial antenna 130 is arranged on the dielectric plate 113. This radial antenna 13
0 is two parallel directions forming the radial waveguide 133.
The circular conductor plates 131 and 132 and the conductor plates 13
1 and 132 and a conductor ring 134 connecting the outer peripheral portions. An introduction port 13 for introducing an electromagnetic field F from the high-frequency generator 145 into the radial waveguide 133 is provided at the center of the conductor plate 132 serving as the upper surface of the radial waveguide 133.
5 are formed, and a plurality of slots 136 for supplying an electromagnetic field F propagating in the radial waveguide 133 into the processing container 111 via the dielectric plate 113 are formed in the conductor plate 131 serving as the lower surface of the radial waveguide 133. Have been. Further, the periphery of the radial antenna 130 and the dielectric plate 113 is covered with a shield material 112, and the electromagnetic field F is
The structure does not leak to the outside of the zero.

The electromagnetic field F introduced from the high frequency generator 145 to the radial antenna 130 is applied to the radial waveguide 133
While propagating radially from the center to the outer periphery of
The light is gradually emitted from the plurality of slots 136. Then, the conductor ring 13 is not radiated from the slot 136.
The electromagnetic field F that reaches 4 is reflected there and returns to the center, and thereafter repeats. On the other hand, the radial antenna 1
The electromagnetic field F radiated from 30 passes through the dielectric plate 113 and is introduced into the processing chamber 111. Then, the gas in the processing container 111 is ionized to form an upper space S of the substrate 121.
2 to generate plasma.

At this time, in the space S1 between the radiation surface of the radial antenna 130 and the plasma surface, an electromagnetic field F1 not radiated from the radial antenna 130 toward the substrate 121 or after being introduced into the processing chamber 111 The electromagnetic field F2 that has not been absorbed by the generation of plasma repeats reflection between the shield members 112. Since the cross-sectional shape of the shield member 112 parallel to the mounting surface of the substrate table 122 is circular as shown in FIG. 8, the electromagnetic fields F1 and F2 that repeat reflection between the shield members 112 are Concentrate near the central axis (O). Radial antenna 130
Since the cross-sectional shape of the conductor ring 134 is also circular,
Even within the radial antenna 130, the electromagnetic field F is concentrated near the central axis (O), and the electromagnetic field F stronger than the peripheral edge tends to be radiated from the center. Therefore, the electric field intensity distribution in the space S1 is a non-uniform distribution in which the electric field intensity at the central portion is larger than that at the peripheral portion as shown by the solid line in FIG.

When plasma is generated by an electric field having a distribution indicated by a solid line in FIG. 9, the density of the plasma becomes high at the center of the space S2. Therefore, in the plasma device shown in FIG. 7, there is a problem of a variation in the processing amount that the plasma processing on the substrate 121 proceeds faster in a lower region where the plasma density is high.

FIG. 10 is a diagram showing another configuration example of a conventional high-frequency plasma device. In this plasma device, an absorber 119 having a function of absorbing an electromagnetic field is provided inside the shield member 112. By causing the absorber 119 to absorb the electromagnetic fields F1 and F2 that are repeatedly reflected in the space S1, the electric field intensity distribution in the space S1 becomes substantially uniform as shown by the dotted line in FIG. Therefore, it is possible to generate more uniform plasma than the plasma device shown in FIG. In order to make the electric field intensity distribution inside the radial antenna 130 uniform, an electromagnetic field absorber may be arranged inside the conductor ring 134.

However, in the plasma device shown in FIG. 10, the electric field intensity in the space S1 is reduced as a whole due to the effect of the absorption material 119 absorbing the electromagnetic fields F1 and F2. For this reason, it becomes difficult to excite plasma under the same process conditions as the plasma apparatus shown in FIG. For example, in the plasma device shown in FIG. 7, even if plasma can be excited by setting the pressure in the processing chamber 111 to about 1 Pa, the plasma device shown in FIG. Cannot be excited, and there is a problem that restrictions for performing the plasma processing are increased.

[0010]

As described above, the conventional plasma apparatus has a problem that the electric field intensity distribution for exciting the plasma is not uniform, and the plasma processing cannot be performed uniformly. In addition, when trying to correct the non-uniformity of the electric field intensity distribution, there is a problem that the electric field intensity becomes small and the restriction on the process conditions becomes large. The present invention has been made to solve such a problem, and an object thereof is to correct the non-uniformity of the distribution while maintaining the electric field intensity.

[0011]

In order to achieve the above object, a plasma apparatus according to the present invention comprises a substrate table having a mounting surface on which a substrate is disposed, and a chamber accommodating the substrate table therein. An antenna that supplies an electromagnetic field to the inside of the chamber, and a cross-sectional shape parallel to a mounting surface of an inner peripheral surface of at least a part of the chamber has an uneven shape. . Here, the chamber is composed of a container section in which plasma is generated by an electromagnetic field supplied from the opening, and a shield section for preventing the electromagnetic field from leaking to the outside. Therefore, for example, only the cross-sectional shape of the inner peripheral surface of the shield portion may be a shape with irregularities, or only the cross-sectional shape near the opening of the inner peripheral surface of the container portion may be a shape with irregularities. The opening of the container is closed to ensure airtightness inside. Here, when the opening of the container is closed with a dielectric member and the antenna is disposed outside the container, the shield is disposed so as to cover between the container and the antenna. Alternatively, the opening of the container may be closed by the shield, and the antenna may be disposed inside the container.

When a slot antenna is used as the antenna, the cross section parallel to the mounting surface of the inner peripheral surface of at least a part of at least one of the slot antenna and the chamber has an uneven shape. It is characterized by the following. Accordingly, the electromagnetic field reflected on the inner peripheral surface of at least one of the slot antenna and the chamber (hereinafter, referred to as a chamber or the like) does not concentrate near the central axis of the chamber or the like.

Here, when the cross section parallel to the mounting surface of the inner peripheral surface of both the slot antenna and the chamber has an uneven shape, the slot antenna and the chamber are connected to one of the slot antenna and the chamber. You may arrange | position so that the convex part of an inner peripheral surface may face from the recessed part of the other inner peripheral surface. As a result, the reflection pattern of the electromagnetic field differs between the inside of the slot antenna and the inside of the chamber, so that the in-plane uniformity of the electromagnetic field can be promoted.

A concave polygon may be used as an example of the uneven shape. In this case, the length between two vertices of which the inner angle is larger than 180 ° among the vertices of the concave polygon may be larger than 波長 of the wavelength of the electromagnetic field. Here, the wavelength of the electromagnetic field refers to the wavelength of the electromagnetic field in the slot antenna having an inner peripheral surface having a concave polygon and in the chamber having an inner peripheral surface having a concave polygon. By setting the length between the two vertices in this way, the proportion of the electromagnetic field reflected on the inner peripheral surface increases, so that it is possible to prevent the electromagnetic field intensity from increasing only near the central axis of the chamber or the like.

The normal of each side of the concave polygon may not pass through the center of the concave polygon. Thus, the electromagnetic field that has passed near the central axis of the concave polygonal chamber or the like does not pass near the central axis immediately after being reflected on the inner peripheral surface of the chamber or the like. The concentration of the electromagnetic field can be further reduced. Further, a bisector of an angle smaller than 180 ° among the inner angles of the concave polygon may be prevented from passing through the center of the concave polygon. As a result, the electromagnetic field that passes near the central axis of the concave polygonal chamber or the like and proceeds in the direction of the apex of the inner angle does not pass near the central axis immediately after being reflected near the apex of the inner angle,
The concentration of the electromagnetic field near the central axis of the chamber or the like can be further reduced. Further, as another example of the uneven shape, a shape in which a portion corresponding to a corner of a concave polygon is a curved line may be used.

[0016]

Embodiments of the present invention will be described below in detail with reference to the drawings. (First Embodiment) FIG. 1 is a block diagram of a first embodiment of the plasma apparatus of the present invention. In this figure, a vertical cross-sectional structure is shown for a part of the configuration. The plasma apparatus includes a chamber 10 for performing plasma processing on a substrate 21, and a radial antenna 30 for supplying a high-frequency electromagnetic field F for exciting plasma in the chamber 10.
And

The chamber 10 is composed of a cylindrical processing container 11 having an open upper part, and a shield member 12 disposed on the side wall of the processing container 11 in an annular shape.
The chamber 10 is formed of a conductor such as aluminum. The upper opening of the processing container 11 has a thickness of 20 mm.
Quartz glass or ceramic (Al ₂ O)
₃ , a dielectric plate 13 made of AlN or the like. The joint between the processing container 11 and the dielectric plate 13 is
A seal member 14 such as a ring is interposed, thereby ensuring airtightness inside the processing container 11.

At the bottom of the processing container 11, an insulating plate 15 made of ceramic or the like is provided. Further, an exhaust port 16 penetrating the insulating plate 15 and the bottom of the processing container 11 is provided, and the inside of the processing container 11 is set to a desired degree of vacuum by a vacuum pump (not shown) communicating with the exhaust port 16. be able to. A nozzle 17 for introducing a plasma gas such as Ar and a process gas such as CF ₄ into the processing container 11 is provided on a side wall of the processing container 11. This nozzle 17 is formed of a quartz pipe or the like.

In the processing container 11, a substrate 21 to be processed is provided.
Is accommodated in a columnar substrate table 22 arranged on the mounting surface. The substrate table 22 is supported by an elevating shaft 23 that penetrates the bottom of the processing chamber 11 and is vertically movable. Further, a high frequency power source 26 for bias is connected to the substrate stand 22 via a matching box 25. The output frequency of this high-frequency power supply 26 is several hundred kHz.
The frequency is set to a predetermined frequency within a range of up to tens of MHz. In order to ensure airtightness in the processing chamber 11, a bellows 24 is provided between the substrate table 22 and the insulating plate 15 so as to surround the elevating shaft 23.
Is provided. Further, a radial antenna 30 is arranged on the dielectric plate 13. The radial antenna 30 is isolated from the processing chamber 11 by the dielectric plate 13 and is protected from plasma generated in the processing chamber 11. Radial antenna 30 and dielectric plate 13
Is covered with a shield member 12 so that the electromagnetic field F from the radial antenna 30 does not leak out of the chamber 10.

The radial antenna 30 is composed of two parallel circular conductor plates 3 forming a radial waveguide 33.
1 and 32 and a conductor ring 34 connecting the outer peripheral portions of these conductor plates 31 and 32. An inlet 35 for introducing an electromagnetic field F into the radial waveguide 33 is formed at the center of the conductor plate 32 serving as the upper surface of the radial waveguide 33. The conductor plate 31 serving as the lower surface of the radial waveguide 33 includes A plurality of slots 36 for supplying an electromagnetic field F propagating in the radial waveguide 33 into the processing chamber 11 are formed. Let the wavelength of the electromagnetic field F in the radial waveguide 33 be λ
g ₁ , the interval between the slots 36 in the radial direction is λg ₁
As the degree, it may be as a radiating type antenna, as λg ₁ / 20~λg _1/30 the spacing may be a leak type antenna. The conductor plates 31 and 32 and the conductor ring 34 are formed of a conductor such as copper or aluminum.

A coaxial line 41 is connected to the center of the radial antenna 30. The outer conductor 41A of the coaxial line 41 is connected to the inlet 35 of the conductor plate 32.
The tip of the inner conductor 41 </ b> B of the coaxial line 41 is formed in a conical shape, and the bottom of the cone is connected to the center of the conductor plate 31. The coaxial line 41 connected to the central portion of the radial antenna 30 is connected to the high-frequency generator 45 via the rectangular-coaxial converter 42 and the rectangular waveguide 43. This high-frequency generator 45 has a frequency of 1 GHz to over ten GH
A high-frequency electromagnetic field having a predetermined frequency within the range of z is generated. Further, by providing a matching circuit 44 for matching impedance in the middle of the rectangular waveguide 43, the power use efficiency can be improved. The connection between the high-frequency generator 45 and the radial antenna 30 may be connected by a cylindrical waveguide.

FIG. 2 is a cross-sectional view taken along the line II-II 'shown in FIG.
2 is a diagram showing a cross section of FIG. In this figure, the inner circumference of the conductor ring 34 of the radial antenna 30 is shown by a dotted line, but the illustration of the slot 36 is omitted. FIG.
FIG. 3 is a diagram extracting and showing a cross-sectional shape of the inner peripheral surface of the shield member 12 shown in FIG. 2. As shown in FIG. 2, the cross-sectional shape of the inner peripheral surface of the shield member 12 is a concave polygon. This concave polygon is a polygon having vertices whose interior angles are greater than 180 °. When the sectional shape of the inner peripheral surface of the shield member 12 is a concave polygon, the electromagnetic fields F1 and F2 reflected on the inner peripheral surface of the shield member 12 are
Are not concentrated near the central axis (O) of the above, and are distributed almost uniformly in the entire region. Here, the central axis of the shield member 12 is a central axis when the cross-sectional shape of the inner peripheral surface is circular (before forming the concave polygon), and coincides with the central axis of the processing container 11. You may.

Assuming that the wavelength of the electromagnetic field F in the space S1 between the conductor plate 31 forming the radiation surface of the radial antenna 30 and the plasma surface is λg, as shown in FIG. It is desirable that the length L between the vertices A and C having an inner angle larger than 180 ° is larger than λg / 2. Since the electromagnetic field F is difficult to propagate in a region having a width smaller than a half wavelength (λg / 2), if L ≦ λg / 2, the shielding material 1
The ratio of light reflected before reaching the inner peripheral surface of No. 2 increases. By setting L> λg / 2, the ratio of reflection on the inner peripheral surface increases, so that the electric field intensity can be prevented from increasing only near the central axis (O) of the shield member 12. When the vertex sandwiched between the vertices A and C is B, the length a between AB is desirably about λg / 4 or more, and the length b between BC is desirably about λg / 2 or more.

Also, it is desirable that the normal of each side of the concave polygon does not pass through the center O of the concave polygon like the normal D.
In other words, it is desirable that the normal line of each constituent surface on the inner periphery of the shield member 12 be shaped so as not to face the central axis (O) of the shield member 12. The center O of the concave polygon is the center when the cross-sectional shape of the inner peripheral surface is circular, and may be coincident with the central axis of the processing container 11. With such a shape, the electromagnetic field F passing near the central axis (O) of the shield member 12 passes near the central axis (O) immediately after being reflected by the inner peripheral surface of the shield member 12. Therefore, the concentration of the electromagnetic field F near the central axis (O) of the shield member 12 can be further reduced.

In addition, the angle of the inside angle of the concave polygon is 180.
It is desirable that the bisector having an angle smaller than ゜ does not pass through the center O of the concave polygon like the bisector E. As a result, the electromagnetic field passing near the central axis (O) of the shield member 12 and proceeding in the direction of the apex of the inner angle passes near the central axis (O) immediately after being reflected near the apex of the inner angle. Therefore, the concentration of the electromagnetic field F near the central axis (O) of the shield member 12 can be further reduced. Although the concave polygon shown in FIGS. 2 and 3 has a shape symmetrical with respect to the center O, it is not always necessary. There are many. Further, the cross-sectional shape of the inner peripheral surface of the shield material 12 may be a shape having irregularities, and for example, as shown in FIG. 4, a portion corresponding to a corner of a concave polygon is a curved shape. Is also good.

Next, the operation of the plasma apparatus shown in FIG. 1 will be described. With the substrate 21 placed on the mounting surface of the substrate stand 22, the inside of the processing container 11 is evacuated to, for example, about 0.01 to 10 Pa. While maintaining this degree of vacuum, Ar is supplied from the nozzle 17 as a plasma gas and CF ₄ is supplied as a process gas. In this state, the electromagnetic field F from the high frequency generator 45 is supplied to the radial antenna 30 via the rectangular waveguide 43, the rectangular / coaxial converter 42, and the coaxial line 41.

The electromagnetic field F introduced into the radial antenna 30 is radiated little by little from the plurality of slots 36 while propagating radially from the center of the radial waveguide 33 to the outer periphery. The electromagnetic field F radiated from the radial antenna 30 passes through the dielectric plate 13 and
Introduced within. Then, Ar in the processing chamber 11 is ionized to generate plasma in the upper space S2 of the substrate 21 and to dissociate CF ₄ . The energy and anisotropy of the plasma are controlled by the bias voltage applied to the substrate table 22, and the radical CF attached to the substrate 21
Used for plasma processing together with _x (x = 1, 2, 3).

At this time, in the space S1 between the radiation surface of the radial antenna 30 and the plasma surface, the electromagnetic field F1 not radiated from the radial antenna 30 toward the substrate 21
The electromagnetic field F2 that has not been absorbed by the generation of plasma after being introduced into the processing chamber
Repeat reflection between Since the cross-sectional shape of the shield member 12 parallel to the mounting surface of the substrate base 22 is a concave polygon as shown in FIG. 2, the electromagnetic field reflected on the inner peripheral surface of the shield member 12 as described above. F1 and F2 do not concentrate near the central axis (O) of the shield member 12, and the electric field intensity distribution in the space S1 is substantially uniform as shown in FIG.
Therefore, it is possible to generate plasma uniformly and to perform uniform plasma processing on the substrate 21.

Further, in the plasma device shown in FIG. 1, the electric field intensity distribution in the space S1 can be made uniform by forming the cross-sectional shape of the inner peripheral surface of the shield member 12 into a concave polygon. Electromagnetic field absorber 1 inside
19 does not need to be provided. For this reason, the electric field intensity in the space S1 does not decrease as in the case where the absorber 119 is used (dotted line in FIG. 9). Therefore, the process conditions do not need to be changed significantly to generate the plasma.

In the plasma apparatus shown in FIG. 1, the inner peripheral surface of the shield member 12 has a cross-sectional shape with irregularities. Similarly, the inner peripheral surface of the side wall of the processing vessel 11 has an irregular cross-sectional shape. It may be a shape having a shape. Space S1 shown in FIG.
Covers a region several millimeters below the upper opening of the processing container 11, so it is effective to make the cross-sectional shape of the inner peripheral surface of this region a shape with irregularities. Note that, instead of the radial antenna 30, another planar antenna such as a dipole antenna or a patch antenna may be used, and at least one of the inner peripheral surfaces of the shield member 12 and the processing container 11 may be formed to have irregularities.

(Second Embodiment) In the plasma device shown in FIG. 1, a shield material 12 parallel to a mounting surface of a substrate base 22 is provided.
Although the cross-sectional shape of the inner peripheral surface of the radial ring 30 is made uneven, the cross-sectional shape of the inner peripheral surface of the conductor ring 34 of the radial antenna 30 may also be made uneven. As a result, the electromagnetic field F that repeats reflection inside the radial antenna 30 is not concentrated near the central axis (O) and its distribution is uniform, so that the electromagnetic field F is uniformly distributed over the entire area of the conductor plate 31 forming the radiation surface. The electromagnetic field F can be emitted. Therefore, even if the cross-sectional shape of the inner peripheral surface of the shield member 12 is circular, the electric field intensity distribution in the space S1 is shown in FIG.
Can be improved as compared with the conventional plasma apparatus shown in FIG.

Furthermore, it is needless to say that it is more effective to make the cross-sectional shape of the inner peripheral surface of both the shield member 12 and the conductor ring 34 of the radial antenna 30 uneven. In the case where the cross-sectional shapes of both inner peripheral surfaces are the same, as shown in FIG. 6, the shield member 12 and the conductor ring 34A are arranged so as to form a rotation angle with each other, and do not form a projection structure. It is desirable. That is,
The conductor ring 34 </ b> A is preferably arranged such that the convex portion on the inner peripheral surface faces the concave portion on the inner peripheral surface of the shield member 12. As a result, the reflection pattern of the electromagnetic field differs between the space S1 and the inside of the radial antenna 30, so that the in-plane uniformity of the electromagnetic field can be promoted. At this time, the radial antenna 3
In order to form a structure in which the periphery of the conductor ring 34 is covered with the shield material 12, it is necessary to make the cross-sectional shape of the inner peripheral surface of the shield material 12 at a portion in contact with the outer peripheral surface 34A of the conductor ring 34 circular.

In the above description, the upper opening of the processing container 11 is closed by the dielectric plate 13 to maintain the degree of vacuum inside the processing container 11, but the shielding member for preventing leakage of the electromagnetic field prevents the processing container 11 from being leaked. The upper opening may be closed.
In this case, the radial antenna 30 is disposed inside the processing container 11 (more precisely, in a chamber configured by the processing container 11 and the shield member). The same effect can be obtained by using another slot antenna such as a cavity antenna instead of the radial antenna 30. The cavity antenna has a cavity resonator that resonates an electromagnetic field introduced from the high frequency generator 45 in a predetermined mode, and a plurality of slots for radiating the electromagnetic field are formed on a lower surface of the cavity resonator. Antenna. In the cavity antenna, it is not necessary to provide an electromagnetic field introduction port at the center of the cavity resonator. Further, the plasma apparatus of the present invention has an ECR (electron cyclotron resonance).
e) It can be applied to plasma devices. Further, it can be used for an etching apparatus, a plasma CVD apparatus, and the like.

[0034]

As described above, by making the cross-sectional shape of the inner peripheral surface of the chamber or the like uneven, the electromagnetic field reflected on the inner peripheral surface does not concentrate on the central portion of the chamber or the like. Therefore, it is not necessary to dispose an electromagnetic field absorbing material on the inner peripheral surface of the chamber or the like, and it is possible to correct the non-uniformity of the distribution without reducing the electric field intensity. As a result, without restricting the process conditions,
The plasma processing can be made uniform.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a first embodiment of a plasma device of the present invention.

FIG. 2 is a sectional view taken along the line II-II 'shown in FIG.

FIG. 3 is a diagram extracting and showing a cross-sectional shape of an inner peripheral surface of the shield material shown in FIG. 2;

FIG. 4 is a cross-sectional view showing a modification of the cross-sectional shape of the inner peripheral surface of the shield material shown in FIG.

FIG. 5 is a diagram showing an electric field intensity distribution in a space between a radiation surface of a radial antenna and a plasma surface.

FIG. 6 is a cross-sectional view showing the arrangement of the shield material and the radial antenna 30.

FIG. 7 is a diagram showing a configuration example of a conventional high-frequency plasma device.

8 is a sectional view taken along line VIII-VIII 'shown in FIG.

FIG. 9 is a diagram showing an electric field intensity distribution in a space between a radiation surface of a radial antenna and a plasma surface.

FIG. 10 is a diagram showing another configuration example of a conventional high-frequency plasma device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Chamber, 11 ... Processing container, 12 and 12A ... Shield material, 13 ... Dielectric plate, 14 ... Seal member, 15 ...
Insulating plate, 16 ... exhaust port, 17 ... nozzle, 21 ... substrate, 2
2 ... board stand, 23 ... elevating shaft, 24 ... bellows, 25 ... matching box, 26 ... high frequency power supply, 30 ... radial antenna, 31, 32 ... conductor plate, 33 ... radial waveguide, 34, 34A ... conductor ring, 35 … Inlet, 36…
Slot, 41: coaxial line, 41A: outer conductor, 41B
... internal conductor, 42 ... rectangular-coaxial converter, 43 ... rectangular waveguide, 44 ... matching circuit, 45 ... high frequency generator, A ~
C: vertices, F, F1, F2: electromagnetic field, L: interval between vertices, S1, S2: space.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G075 AA24 AA30 BC01 BC06 BC10 CA25 CA47 DA02 EB01 EC30 FB02 FB04 FB06 FC11 FC15 4K030 FA02 FA04 HA07 KA08 KA30 KA32 LA15 LA18 5F004 AA01 BA14 BA20 BD01 BD04 DA01 DA08 EBBA ECA EH11 EH17

Claims (8)

[Claims] 1. A plasma apparatus comprising: a substrate stage having a mounting surface on which a substrate is arranged; a chamber accommodating the substrate stage therein; and an antenna for supplying an electromagnetic field to the interior of the chamber. A plasma device characterized in that a cross section of at least a part of an inner peripheral surface of a chamber, which is parallel to the placement surface, has a shape with irregularities. 2. A plasma apparatus comprising: a substrate stage having a mounting surface on which a substrate is arranged; a chamber accommodating the substrate stage therein; and a slot antenna for supplying an electromagnetic field to the interior of the chamber. A plasma device, wherein a cross-sectional shape of an inner peripheral surface of at least a part of at least one of the slot antenna and the chamber, which is parallel to the placement surface, has an uneven shape. 3. The slot device according to claim 2, wherein a shape of a cross section of the inner peripheral surface of each of the slot antenna and the chamber, which is parallel to the mounting surface, has a shape with irregularities. And the chamber is arranged such that a convex portion on one inner peripheral surface of the slot antenna and the chamber faces a concave portion on the other inner peripheral surface of the chamber. 4. The plasma device according to claim 1, wherein the uneven shape is a concave polygon. 5. The plasma apparatus according to claim 4, wherein a length between two vertices of which an inner angle is larger than 180 ° among vertexes of the concave polygon is larger than の of a wavelength of an electromagnetic field. Plasma device. 6. The plasma device according to claim 4, wherein a normal to each side of the concave polygon does not pass through a center of the concave polygon. 7. The plasma device according to claim 4, wherein a bisector of an angle smaller than 180 ° among inner angles of the concave polygon passes through a center of the concave polygon. A plasma device characterized in that it is not provided. 8. The plasma device according to claim 1, wherein the uneven shape is a shape in which a portion corresponding to a corner of a concave polygon is a curved line. Plasma device.