JP2002216616A - Substrate for electron source, picture display device, and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a reliable substrate for an electron source keeping excellent electrical connectivity, a picture display device provided with this substrate, and a manufacturing method for them. SOLUTION: The substrate comprises, an electrode 1 near an electron emitter, a first conductive layer 3, plural second conductive layers 5, a third conductive layer 7 which is formed to be connected with the second conductive layers 5, and an insulating film 4 which is formed over a part of the first conductive layer 3, wherein the plural second conductive layers 5 cover a part of the insulating film 4 and are connected with the electrode 1 near the electron emitter via the third conductive layer 7. A connecting portion between the electrode 1 near the electron emitter and the third conductive layer 7 is disposed off a line which passes a connecting portion between the third conductive layer 7 and the second conductive layers 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source substrate, an image display device, and a method of manufacturing the same, and more particularly, to an electron source substrate having a plurality of surface conduction electron-emitting devices arranged on a two-dimensional plane. And

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a thermionic electron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter, referred to as EF), a metal / insulating layer / metal (hereinafter, referred to as MIM), a surface conduction type electron emission element, and the like.

As an example of the EF type, WPDyke & W.W.Dola
n, "Fieldemission", Advance in Electron Physics, 8,8
9, (1956) and the like are known. Examples of the MIM type include C.I.
A.Mead, "Tunnel-emissionamplifier, J, Appl.Phys, 32,64
6 (1961) and the like are known. Examples of surface conduction electron-emitting devices include MIElinson, Radio Eng. ElectronPhys., 1
0, (1965) and the like.

The surface conduction type electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows through a thin film having a small area formed on a substrate and the film surface flies. Examples of the surface conduction electron-emitting device include those using an SnO ₂ thin film by Elinson et al. And those using an Au thin film [G.
Dittmer: "Thin Solid Films", 9,317 (1972)], In ₂ O ₃ /
By SnO ₂ thin film [M. Hartwell and CGFonstad: "
IEEE Trans. ED. Conf. ", 519, (1975)], based on carbon thin film [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1, 2]
2 pages (1983)].

As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned device configuration of M. Hartwell is shown in FIG.
It is shown in FIG. In this figure, reference numeral 901 denotes an insulating substrate. Reference numeral 902 denotes a thin film for forming an electron emission portion, which is formed of an H-shaped metal oxide or the like formed by sputtering, and is formed by an energization process called forming, which will be described later.
05 is formed.

Conventionally, in these surface conduction type electron-emitting devices, the thin film 9 for forming an electron-emitting portion has to be formed before emitting electrons.
In general, the electron-emitting portion 905 was previously formed by applying an electric current called “forming”. That is,
Forming is a process in which a voltage is applied to both ends of the electron-emitting portion forming thin film 902 to locally break, deform, or alter the electron-emitting portion forming thin film, thereby causing the electron-emitting portion 905 to be in an electrically high-resistance state. It is to form. Note that a crack may be generated in a part of the electron-emitting portion forming thin film 902 in the electron-emitting portion 905, and electrons may be emitted from the vicinity of the crack.

[0007]

FIG. 15 shows a process flow of a conventional method for manufacturing an electron source substrate. In FIG. 15, reference numeral 1 denotes an electron emission portion, 2 denotes a first conductor layer, 3 denotes an interlayer insulating layer, 4 denotes a second conductor layer, and 5 denotes a film (conductive film) for forming an electron emission portion.

Here, when the first conductor layer and the second conductor layer are formed by a printing method such as a screen printing method, a plurality of electrode portions connected to the second conductor layer have the second conductor layer. The upper surface of the second layer is formed so as to fall through the thickness of the insulating film while being substantially the same as the upper surface of the other portion due to the influence of viscosity during printing and softening by heating. The thickness of the conductor layer and the insulating layer. Generally, the second conductor layer is made of a thick film material, and therefore has high thermal stress. Therefore, in some cases, the electrode connected to the second conductor layer may be torn due to thermal stress or the like held by the thick film, which may significantly impair electrical connectivity at the above-mentioned portion. is there.

Accordingly, the present invention solves the above-mentioned problems, and provides a highly reliable electron source substrate which secures excellent electrical connectivity, an image display device provided with the electron source substrate, and a method of manufacturing these. The purpose is to provide.

[0010]

According to a method of manufacturing an electron source substrate of the present invention, a plurality of first conductor layers and a plurality of second conductor layers intersecting with each of the first conductor layers are provided on the substrate. And a pair of electrodes and an electron emission portion, which are disposed at positions where the first conductor layers and the second conductor layers intersect, and are connected to the first and second conductor layers. A method of manufacturing an electron source substrate comprising a plurality of electron-emitting devices, comprising: forming a plurality of the pair of electrodes on the substrate; and connecting the plurality of electrodes to one of the pair of electrodes. Forming the first conductor layer, forming a third conductor layer for connecting the other of the pair of electrodes and the second conductor layer, and forming the third conductor layer on the first conductor layer. Forming an insulating film covering a part thereof; and covering the part of the insulating film, forming the other of the pair of electrodes and the third conductor layer. Characterized by a step of forming a plurality of said second conductive layer to be connected through.

In one aspect of the method for manufacturing an electron source substrate of the present invention, a boundary position where one of the pair of electrodes is connected to the third conductor layer, and the third conductor layer and the second conductor layer are connected to each other. Boundary positions connected to the conductor layer do not overlap each other.

In one aspect of the method of manufacturing an electron source substrate according to the present invention, the electron-emitting portion is formed by forming a thin film for forming an electron-emitting portion, and subjecting the thin film for forming an electron-emitting portion to an energizing process. Things.

In one embodiment of the method of manufacturing an electron source substrate according to the present invention, after forming the pair of electrodes and before forming the first conductor layer, the plurality of first conductor layers on the substrate are formed. Forming a plurality of lower conductor layers at the positions where are formed.

In one embodiment of the method for manufacturing an electron source substrate according to the present invention, the third conductor layer and the second conductor layer are connected through a cutout portion formed in the insulating film.

In one embodiment of the method for manufacturing an electron source substrate according to the present invention, the third conductor layer and the second conductor layer are connected through an opening formed in the insulating film.

According to a method of manufacturing an image display device of the present invention, there is provided a method of manufacturing an image display device comprising: an electron source substrate; and a phosphor disposed at a position facing the electron source substrate and emitting visible light upon irradiation with electrons. A method, wherein the electron source substrate is manufactured by the above-described method for manufacturing an electron source substrate.

An electron source substrate of the present invention is formed on a substrate, a plurality of first conductive layers, an insulating film covering a part of the first conductive layer, and an insulating film formed on the insulating film. A plurality of second conductor layers intersecting with one conductor layer, and each of the first conductor layers is disposed at a position where the first conductor layer intersects with each of the second conductor layers; And a plurality of electron-emitting devices each having a pair of electrodes respectively connected to the respective second conductor layers through a space region of the insulating film, and an electron-emitting portion. A third conductor layer is provided, and the other of the pair of electrodes and the second conductor layer are connected via the third conductor layer.

In one aspect of the electron source substrate of the present invention, a boundary position where one of the pair of electrodes is connected to the third conductor layer, and the third conductor layer and the second conductor layer are connected to each other. Are not overlapped with each other.

In one embodiment of the electron source substrate according to the present invention, the electron emitting portion is formed by forming a thin film for forming an electron emitting portion and applying a current to the thin film for forming an electron emitting portion. .

In one aspect of the electron source substrate of the present invention, each lower conductor layer is formed below each of the first conductor layers.

In one aspect of the electron source substrate of the present invention, the vacant region of the insulating film is formed in a notch shape.

In one aspect of the electron source substrate of the present invention, the space region of the insulating film is formed in an opening shape.

An image display apparatus according to the present invention includes the above-mentioned electron source substrate, and a phosphor which is disposed at a position facing the electron source substrate and emits visible light upon irradiation with electrons.

According to the present invention, in a wiring structure having a so-called simple matrix structure, a plurality of electrodes connected to the second conductor layer are not directly connected as compared with the conventional manufacturing method and structure. The conductive layer is not torn by stress or the like, and the reliability of the electrical connection is significantly improved as compared with the conventional configuration.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 shows a configuration diagram (top view and cross-sectional view) of an electron source substrate using a surface conduction electron-emitting device, which is a cold cathode electron beam source, used in an image display device according to an embodiment of the present invention. FIG. 2 shows a process flow of a method for manufacturing an electron source substrate according to the present invention.

In the figure, reference numeral 1 denotes a thin film electrode near an electron emitting portion;
Is a lower conductor layer arranged to reduce the resistance of the first conductor layer 3, 3 is a first conductor layer, 4 is an interlayer insulating layer, 5 is a second conductor layer, and 6 is an electron emission portion. The thin film 7 for use is a third conductor layer which is a main component of the present invention.

Hereinafter, the method for fabricating the electron source substrate according to the present embodiment will be described in detail with reference to the process flow chart of FIG.
First, the electrode 1 near the electron emission portion is formed on the substrate (FIG. 2).
(A)). The electrode 1 in the vicinity of the electron-emitting portion is a thin film 6 for the electron-emitting portion.
The first conductor layer 3 and the second conductor layer 5 are provided to improve ohmic contact with the first conductor layer 3 and the second conductor layer 5. Usually, the electron-emitting-portion thin film is provided to avoid problems such as “wetting property” and “thickness holding property” because the thin film is much thinner than the conductor layer for wiring. When the conductor layers 3 and 5 for wiring are formed of a thin film by, for example, a sputtering method, it is not always necessary to provide the electrode 1 in the vicinity of the electron-emitting portion, and it is possible to form them simultaneously with the wiring conductor (wiring layer). .

The method for forming the electrode 1 in the vicinity of the electron emission portion includes a method using a vacuum system such as a vacuum evaporation method, a sputtering method, and a plasma CVD method, and printing a thick film paste in which an Ag component and a glass component are mixed in a solvent. There are a thick film printing method formed by baking, and an offset printing method using a Pt paste. In addition, the electrode 1 near the electron emission portion
And the lower conductor layer 2 can be formed simultaneously,
This is the simplest method.

Next, a first conductor layer 3 is formed (FIG. 2).
(B)). As the method of forming the first conductor layer 3, the same formation method as the method of forming the electrode 1 near the electron emission portion is applicable. However, in the case of the first conductor layer 3, the electrode 1 near the electron emission portion is used. Unlike this, a thicker film is advantageous because the electric resistance can be reduced. Therefore, it is advantageous to use a thick film printing method.

In recent years, a film forming technique by a photo paste method in which photolithography technology has been introduced into thick film paste printing has been developed, and it is of course possible to form a film by the photo paste method. The photo paste method is advantageous when the width of the substrate becomes narrow or when positional accuracy is required for a large substrate.

Of course, thin-film wiring can be applied, but increasing the film thickness in order to lower the wiring resistance requires a large amount of time for film formation, and the wiring resistance is reduced due to the internal stress of the film. At present, it is not possible to make the film thicker, for example, when it is desired to keep the film thickness low.

Here, the third conductor layer 7, which is a feature of the present invention, can be formed in the same step as the first conductor layer 3, and the simultaneous formation is the simplest method.

Further, the positional relationship between the connection portion between the electrode 1 near the electron emission portion and the third conductor layer 7 and the connection portion between the third conductor layer 7 and the second conductor layer 5 is on the same line. By arranging them so that they do not exist, a configuration with the highest reliability can be achieved.

In the prior art, the second conductor layer and the electrode in the vicinity of the electron-emitting portion are configured to be in direct contact with each other. However, according to the configuration of the present invention, direct contact is eliminated.

Next, an interlayer insulating layer 4 is formed (FIG. 2).
(C)). It is important that the interlayer insulating layer 4 is formed so as to cover a part of the first conductor layer 3. Further, in order to secure the connection with the electrode in the vicinity of the electron-emitting portion, it is necessary to design the pattern so as to provide a concave or contact hole type window. The constituent material of the interlayer insulating layer 4 may be any material that can maintain the insulating property, and is, for example, a thick film paste containing no metal component. Of course, a photo paste containing no metal component can be applied.

Next, a second conductor layer 5 is formed (FIG. 2).
(D)). The same forming method as that of the first conductor layer 3 can be applied. Finally, a film 6 for forming an electron emission portion is formed to complete a device (for one device) for a cold cathode electron beam source (FIG. 2E). A conventional method can be applied as it is to the method for forming the film for forming the electron-emitting portion and the method for forming the electron-emitting portion (surface conduction electron-emitting device) (described later).

Although only one element portion is shown in FIG. 2E, the structure of a simple matrix electron source substrate is completed by forming a plurality of these at the same time. Further, in FIG. 2E, the planar shape of the insulating layer is described as a concave shape, but the present invention can be similarly applied to a contact hole type.

A typical configuration of a surface conduction electron-emitting device,
For manufacturing method and characteristics, see, for example, Japanese Patent Application Laid-Open No. 2-568.
No. 22 discloses this. Hereinafter, the basic configuration, manufacturing method, and characteristics of the surface conduction electron-emitting device according to the present embodiment will be outlined. FIG. 3 is a drawing showing a configuration of a typical electron-emitting device according to the present invention. In the figure, 31 is an insulating substrate, 35 and 36 are device electrodes, 3
Reference numeral 4 denotes a thin film for forming an electron emitting portion, and 33 denotes an electron emitting portion.

In the present embodiment, the electron emitting portion 33 of the electron emitting portion forming thin film 34 including the electron emitting portion 33 is made of electrically conductive particles having a particle size of several nm. The portion other than the electron emission portion 33 of the emission portion forming thin film 34 is formed of a fine particle film. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and has a fine structure not only in a state where the fine particles are individually dispersed but also in a state where the fine particles are adjacent to each other or overlap each other (including an island shape). Refers to the film of.

The thin film 3 for forming the electron emitting portion including the electron emitting portion
Specific examples of the constituent atoms or molecules of 4 include Pd, Ru,
Ag, Au, Ti, In, Cu, Cr, Fe, Zn, S
metals such as n, Ta, W, Pb, PdO, SnO ₂ , In ₂
Oxides such as O ₃ , PbO, Sb ₂ O ₃ , HfB ₂ , Zr
_{B 2, LaB 6, CeB 6} , YB 4, GdB 4 , etc. borides, TiC, ZrC, HfC, TaC , SiC, and WC, etc., TiN, ZrN, nitrides such as HfN, Si,
Semiconductors such as Ge, carbon, AgMg, NiC
u, PbSn and the like.

Examples of the method for forming the electron-emitting-portion-forming thin film 34 include a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, and a spinner method.

Various methods are conceivable for forming the electron-emitting device of the electron-emitting-portion-forming thin film having the electron-emitting portion 33. One example is shown in FIG. Reference numeral 34 denotes a thin film for forming an electron-emitting portion.

Hereinafter, referring to FIGS. 3, 4 and 5,
A method for forming an element will be described. The following description describes a method for forming a single element, but also applies to the method for manufacturing a novel electron source substrate according to the above-described embodiments of the present invention.

After the insulating substrate 1 is sufficiently washed with a detergent, pure water and an organic solvent, the device electrodes 35, 3 are formed on the surface of the insulating substrate 1 by a vacuum deposition technique and a photolithography technique.
6 is formed (FIG. 4A). As a material of the device electrodes 35 and 36, any material may be used as long as it has electric conductivity. For example, nickel metal is used. As for the dimensions of the device electrodes 35 and 36, for example, the device electrode interval L is 10 μm, and the device electrode length W is 30.
The thickness d of the element electrodes 35 and 36 is 100 nm. As a method of forming the device electrodes (electrodes near the electron emission portions) 35 and 36, a thick film printing method may be used. In the case of the printing method, an organic metal paste (M
OD).

Device electrode 3 provided on insulating substrate 31
An organic metal solution is applied to the insulating substrate 31 on which the device electrodes 35 and 36 are formed between 5 and 36, and the organic metal solution is allowed to stand to form an organic metal thin film. In addition, the organic metal solution refers to the Pd, Ru, Ag, Au, Ti, In, Cu,
This is a solution of an organic compound containing a metal such as Cr, Fe, Zn, Sn, Ta, W, and Pb as a main element. Thereafter, the organic metal thin film is heated and baked, and is patterned by lift-off, etching, or the like, to form the electron-emitting-portion-forming thin film 34 (FIG. 4B).

Subsequently, by applying a voltage between the device electrodes 35 and 36 by an energizing process called forming, an electron emitting portion 33 having a changed structure is formed in the portion of the thin film 34 for forming the electron emitting portion ( FIG. 4 (c)). This energization process locally destroys the electron-emitting portion forming thin film 34,
A portion which has been deformed or deteriorated and whose responsiveness has changed is called an electron emitting portion 33. As described above, the electron emission unit 33
Was observed to be composed of fine metal particles.

FIG. 5 shows a voltage waveform during the forming process. In FIG. 5, T1 and T2 are the pulse width and pulse interval of the voltage waveform, respectively, T1 is 1 microsecond to 10 milliseconds, T2 is 10 microseconds to 100 milliseconds, and the triangular wave (peak voltage at the time of forming) is The voltage was set to about 4 V to 10 V, and the forming process was appropriately set in a vacuum atmosphere for several tens of seconds.

When forming the above-described electron-emitting portion,
Although the forming process is performed by applying a triangular wave pulse between the electrodes of the element, the waveform applied between the electrodes of the element is not limited to the triangular wave, and a desired waveform such as a rectangular wave may be used. The high value, pulse width, pulse interval, and the like are not limited to the above-described values, and desired values can be selected as long as the electron-emitting portion is formed well.

The basic characteristics of the electron-emitting device according to the present embodiment having the above-described device structure and manufactured by the above-described manufacturing method will be described with reference to FIGS. FIG. 6 shows FIG.
1 is a schematic configuration diagram of a measurement evaluation device for measuring the electron emission characteristics of an element having the configuration shown in FIG.

In FIG. 6, 31 is an insulating substrate, 35,
36 is a device electrode, 34 is a thin film for forming an electron-emitting portion, and 33 is an electron-emitting portion. Reference numeral 61 denotes a power supply for applying a device voltage Vf to the device, and 60 denotes an ammeter for measuring a device current If flowing through the thin film 34 for forming an electron emission portion including the electron emission portion 33 between the device electrodes 35 and 36. , 64 are anode electrodes for capturing an emission current Ie emitted from the electron emission portion of the device, 63 is a high voltage power supply for applying a voltage to the anode electrode 64, and 62 is emitted from the electron emission portion 33 of the device. This is an ammeter for measuring the emission current Ie.

In measuring the device current If and the emission current Ie of the electron-emitting device, a power supply 61 and an ammeter 60 are connected to the device electrodes 35 and 36, and a power supply 63 and an ammeter 62 are provided above the electron-emitting device. Are connected to each other.

The electron-emitting device and the anode 6
Numeral 4 is installed in a vacuum device 65, and the vacuum device is provided with equipment necessary for a vacuum device such as an exhaust pump 66 and a vacuum gauge so that the device can be measured and evaluated under a desired vacuum. Has become.

The voltage of the anode electrode 64 is 1 to 10
kV, the distance H between the anode electrode 64 and the electron-emitting device is 3
It was measured in a range of ８8 mm.

FIG. 7 shows a typical example of the relationship between the emission current Ie, the device current If, and the device voltage Vf measured by the measurement and evaluation apparatus shown in FIG. FIG. 7 is shown in arbitrary units, and the emission current Ie is approximately 1000 times the device current If.
It is about one-third. As is clear from FIG. 7, the electron-emitting device has three characteristics with respect to the emission current Ie.

First, when an element voltage of a certain voltage (called a threshold voltage, Vth in FIG. 7) or more is applied to the present element, the emission current Ie sharply increases. Is hardly detected. That is, the emission current I
This is a non-linear element having a clear threshold voltage Vth for e.

Second, since the emission current Ie depends on the device voltage Vf, the emission current Ie can be controlled by the device voltage Vf.

Third, the amount of charge captured by the anode electrode 64 can be controlled by the time during which the device voltage Vf is applied.

Because of the above characteristics, the electron-emitting device according to the present invention is expected to be applied to various fields. In addition, the example of the (MI) characteristic in which the element current If monotonically increases with respect to the element voltage Vf has been described.
NR) characteristics in some cases. Also in this case, the electron-emitting device has the above three characteristics. The surface conduction electron-emitting device in which the conductive fine particles are dispersed in advance can be configured by changing a part of the basic manufacturing method of the basic device configuration of the present embodiment.

As a typical configuration of the color image display device to which the electron source substrate according to the present embodiment is applied, first, as shown in FIG. 8, the manufacturing method disclosed in the above-mentioned JP-A-2-56822 is used. A plurality of electron-emitting devices manufactured by the method are formed on the substrate 101.

After fixing the substrate 101 on the rear plate 102, the face plate 1 is placed 5 mm above the substrate 101.
10 (formed by forming a phosphor film 108 and a metal back 109 on the inner surface of a glass substrate 107)
3, the face plate 110, the support frame 1
03, a frit glass is applied to the joint of the rear plate 102, and 400 ° C. to 500 ° C. in the air or in a nitrogen atmosphere.
Seal by baking at ℃ for 10 minutes or more.

Also, the substrate 101 on the rear plate 102
0 was also fixed with frit glass. In FIG.
33 is an electron emitting portion, 105 and 106 are X direction and Y respectively.
In the direction of the device electrode.

Here, the face plate 110,
Although the envelope 111 is constituted by the support frame 103 and the rear plate 102, since the rear plate 102 is provided mainly for the purpose of reinforcing the strength of the substrate 101, if the substrate 101 itself has sufficient strength, another The body rear plate 102 is unnecessary, and the support frame 103 is directly sealed to the substrate 101, and the face plate 110, the support frame 103, the substrate 10
1, the envelope 111 is formed. Also, the phosphor film 108
Is usually provided with a metal back 109 on the inner surface side.

The purpose of installing the metal back 109 is to improve the luminance by reflecting light toward the inner surface side of the phosphor to the face plate 110 side, and to act as an electrode for applying an electron beam acceleration voltage. To make
And protecting the phosphor from damage due to collision of negative ions generated in the envelope.

After the phosphor film is formed, the metal back 109 is
The inner surface of the phosphor film does not undergo a smoothing process (usually called filming), and is then formed by vacuum evaporation of Al. Further, a transparent electrode (not shown) may be provided on the outer surface side of the phosphor film 108 in order to enhance the electric conductivity of the phosphor film 108 of the face plate 110. When performing the above-described sealing, in the case of a color image display device, it is necessary to sufficiently align the positions of the phosphors and the electron-emitting devices corresponding to each color. The atmosphere in the glass container manufactured in this manner needs to be sufficiently performed. The atmosphere in the glass container is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, terminals D0x1 to D0x1
0xm and D0y1 through Doyn through device electrode 105,
A voltage is applied between the electrodes 106 to perform the above-described forming process, thereby forming the electron-emitting portion 33 to form an electron-emitting device. Finally, the exhaust pipe is heated and welded at a degree of vacuum of about 1.3 × 10 ⁻⁴ Pa (10 ⁻⁶ Torr) to seal the envelope, thereby completing the process.

Further, in order to maintain the degree of vacuum after sealing, a step of gettering is performed. This is a process of forming a getter vapor-deposited film by heating a getter disposed at a predetermined position (not shown) of an image display device by resistance heating or high-frequency heating immediately before or after sealing. It is. As the getter, Ba or the like is usually the main component, and the degree of vacuum is maintained by the adsorption action of the deposited film.

In the image display device constructed by the above-described manufacturing method, each electron-emitting device has a terminal D outside the container.
Electrons are emitted by applying a voltage through 0x1 to D0xm to D0y1 to D0yn.

That is, the external terminal D0x corresponding to the scanning line
A voltage is sequentially applied to 1 to D0xm for each horizontal period of the image signal, and a signal voltage corresponding to the intensity of the image signal of the scanning line selected in the horizontal period is applied to the external terminals D0y1 to D0yn. Therefore, the selected external terminal D0xi
A voltage according to the intensity of the image signal is applied to both ends of each electron-emitting device connected to (1 ≦ i ≦ m), and electrons corresponding to the intensity of the image signal are emitted. In addition, terminal D0x1 outside a container
To D0xm and the terminals D0y1 to D0yn outside the container may be reversed.

The metal back 1 is connected through the high voltage terminal Hv.
09 or a high voltage of several kV or more is applied to the transparent electrode to accelerate the electron beam and collide with the phosphor film 108 to excite and emit the phosphor, thereby forming an image. Needless to say, these configurations are the outlines of the configurations necessary for producing the image display device, and the materials and the like of the respective members are not limited to the above.

The phosphor film 108 is formed only of a phosphor in the case of a monochrome display, but in the case of a color display,
As shown in FIG. 9, a black member 1 called a black stripe or a black matrix depends on the arrangement of phosphors.
2 and a phosphor 13. The purpose of providing the black member 12 is to make the color mixing and the like inconspicuous by blacking out portions of each of the three primary color phosphors 13 required for color display by coating the respective phosphors 13. The purpose is to suppress a decrease in contrast due to reflection.
As the black material, there are usually many materials containing graphite as a main component. However, the material is not limited to this as long as it is electrically conductive and has little light transmission and reflection.

As a method of applying a fluorescent substance to the glass substrate 107, there are a precipitation method, a printing method and the like in the case of monochrome. For the color, there is a slurry method and the like. Of course, it is also possible to use a printing method in color.

[0071]

Next, a method of manufacturing an electron source substrate, particularly an electron source substrate in an image display device using a surface conduction electron-emitting device, according to the present invention will be described with reference to each embodiment.

Embodiment 1 will be described with reference to FIGS. 10 and 11. FIG. 10 is a configuration diagram, and FIG. 11 is a process diagram illustrating a manufacturing process. First, the electrode 1 near the electron emission portion and the lower conductor layer 2 are formed. The lower conductor layer 2 is advantageous in that when the first conductor layer 3 is formed by a screen printing method as in the present embodiment, an electrical connection is ensured if a disconnection occurs. In this embodiment, a sputtering method is used as a film formation method. A film was formed in vacuum by a sputtering method using a Pt target. The film thickness is 0.
It was about 08 μm. After forming a film on the entire surface of the substrate by a sputtering method, a desired pattern was formed by photolithography. In the present embodiment, the pattern of the electrode 1 in the vicinity of the electron-emitting portion is a non-equilateral pattern of right and left so that a pattern can be designed at a high density. (FIG. 11
(A)).

Next, a first conductor layer 3 is formed (FIG. 11).
(B)). As a forming method, a screen printing method was used. The material used for printing is a screen printing paste containing Ag as a conductor component.

Here, the third conductor layer 7 according to the present invention is
It is formed at the same time as the first conductor layer 3. According to the simultaneous formation, the process can be shortened most. of course,
Even if the first conductor layer and the third conductor layer are formed in different steps, there is no problem.

Next, an interlayer insulating layer 4 is formed (FIG. 11).
(C)). The paste material is a paste in which PbO is a main component and a glass binder and a resin are mixed. The firing temperature is 480 ° C. and the peak retention time is 10 minutes. Also,
Usually, printing and baking are performed at least three times in total for the interlayer insulating layer 4 in order to ensure sufficient insulation between the upper and lower layers. The film formed by the thick film paste is usually a porous film.
Therefore, after printing and firing once, printing is performed again, and the second and third times of the film are printed and fired so as to fill the porous state of the first film. This ensures sufficient insulation. This is also the case in the present embodiment. The number of printing layers is increased or decreased in consideration of insulating properties. This insulating film 4
Here, a notch-shaped space region is formed so that at least a part of the third conductor layer 7 is exposed.

Finally, a second conductor layer 5 is formed (FIG. 1).
1 (d)). As a forming method, a thick film screen printing method was used. Thus, the matrix wiring portion is completed. Of course, the paste material and the printing method are not limited to those described above.

After the wiring is completed, an electron emitting portion (not shown) is formed (FIG. 11E). First, organic palladium (CCP4230, manufactured by Okuno Pharmaceutical Co., Ltd.) is spin-coated on the upper layer of the current-carrying electrode 2 to the electron-emitting portion formed by the printing method using a spinner, and then heat-treated at 300 ° C. for 10 minutes. Then, a thin film 5 for forming an electron emission portion made of Pd is formed.

The thin film 5 for forming an electron emission portion formed in this manner is composed of fine particles containing Pd as a main element.
The film thickness is 10 nm, and the sheet resistance value is 5 × 10 ⁴ Ω / □.
Met. The sheet resistance value is defined as a unit length-converted resistance value of a conductor having the same length and width.

The fine particle film described here is a film in which a plurality of fine particles are gathered. The fine structure thereof is not only a state in which the fine particles are individually dispersed and arranged, but also a state in which the fine particles are adjacent to each other or overlap each other ( (Including islands)
The particle size refers to the diameter of the fine particles whose particle shape can be recognized in the above state.

By patterning the palladium film by using the photolithography method, the element manufacturing process before forming is completed.

As the forming method, a conventional method can be introduced. In this embodiment, the following conditions are set (see FIG. 5). In FIG. 5, T1 and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 millisecond, T2 is 10 milliseconds, and the peak value of the triangular wave (the peak voltage during forming) is 14V. The forming process was performed in a vacuum atmosphere of about 1.3 × 10 ⁻⁴ Pa (1 × 10 ⁻⁶ Torr) for 60 seconds. The electron-emitting portion thus manufactured is in a state in which fine particles mainly composed of palladium element are dispersed and arranged, and the average particle diameter of the fine particles is 3n.
m.

Next, after the forming of all the surface conduction electron-emitting devices is completed, 1.3 × 10 ⁻⁴ Pa (1 × 10
^An exhaust pipe (not shown) was heated and welded with a gas burner at a degree of vacuum of about ⁻⁶ Torr) to seal the envelope.

Finally, a getter process is performed to maintain the degree of vacuum after sealing. This involves heating the getter disposed at a predetermined position (not shown) in the image display device by a heating method such as high-frequency heating immediately before performing sealing,
This is a process for forming a deposition film. The getter is mainly composed of Ba or the like.

In the image display device of the present invention completed as described above, each of the electron-emitting devices has a terminal D0 outside the container.
A scanning signal and a bias signal are respectively applied by signal generation means (not shown) through x1 to D0xm and D0y1 to D0yn to emit electrons, and a high voltage of several kV is applied to the metal back film through the high voltage terminal Hv. Then, an image is displayed by accelerating the electron beam to collide with, excite, and emit light from the phosphor film.

(Embodiment 2) Embodiment 2 is shown in FIGS.
3 will be described. FIG. 12 is a configuration diagram, and FIG. 13 is a process diagram illustrating a manufacturing process. First, the electrode 1 near the electron emission portion and the lower conductor layer 2 are formed. Lower conductor layer 2
This is an advantageous configuration for securing electrical connection in the event that a disconnection occurs when the first conductor layer 3 is formed by screen printing as in this embodiment. In this embodiment, a sputtering method is used as a film formation method. A film was formed in vacuum by a sputtering method using a Pt target. The thickness was about 0.08 μm. After forming a film on the entire surface of the substrate by a sputtering method, a desired pattern was formed by photolithography. In the present embodiment, the pattern of the electrode 1 in the vicinity of the electron-emitting portion is a left-right unequal-length pattern so that high-density pattern design is possible.
(FIG. 13 (a)).

Next, a first conductor layer 3 is formed (FIG. 13).
(B)). As a forming method, a screen printing method was used. The material used for printing is a screen printing paste containing Ag as a conductor component.

Here, the third conductor layer 7 according to the present invention is
It is formed at the same time as the first conductor layer 3. According to the simultaneous formation, the process can be shortened most. of course,
Even if the first conductor layer and the third conductor layer are formed in different steps, there is no problem.

Next, an interlayer insulating layer 4 is formed (FIG. 13).
(C)). The paste material is a paste in which PbO is a main component and a glass binder and a resin are mixed. The firing temperature is 480 ° C. and the peak retention time is 10 minutes. Also,
Usually, printing and baking are performed at least three times in total for the interlayer insulating layer 4 in order to ensure sufficient insulation between the upper and lower layers. The film formed by the thick film paste is usually a porous film.
Therefore, after printing and firing once, printing is performed again, and the second and third times of the film are printed and fired so as to fill the porous state of the first film. This ensures sufficient insulation. This is also the case in the present embodiment. The number of printing layers is increased or decreased in consideration of insulating properties. This insulating film 4
Here, an opening-shaped space region is formed so that at least a part of the third conductor layer 7 is exposed.

Finally, a second conductor layer 5 is formed (FIG. 1).
3 (d)). As a forming method, a thick film screen printing method was used. Thus, the matrix wiring portion is completed. Of course, the paste material and the printing method are not limited to those described above.

After the wiring is completed, an electron-emitting portion (not shown) is formed (FIG. 13E). First, organic palladium (CCP4230, manufactured by Okuno Pharmaceutical Co., Ltd.) is spin-coated on the upper layer of the current-carrying electrode 2 to the electron-emitting portion formed by the printing method using a spinner, and then heat-treated at 300 ° C. for 10 minutes. Then, an electron-emitting-portion-forming thin film 5 made of Pd is formed.

The thus formed thin film 5 for forming an electron emitting portion is composed of fine particles containing Pd as a main element.
The film thickness is 10 nm, and the sheet resistance value is 5 × 10 ⁴ Ω / □.
Met. The sheet resistance value is defined as a unit length-converted resistance value of a conductor having the same length and width.

The fine particle film described here is a film in which a plurality of fine particles are aggregated. The fine structure thereof is not limited to a state in which the fine particles are individually dispersed and arranged, but also a state in which the fine particles are adjacent to each other or overlap each other. (Including islands)
The particle size refers to the diameter of the fine particles whose particle shape can be recognized in the above state.

By patterning this palladium film by using the photolithography method, the element manufacturing process before forming is completed.

As the forming method, a conventional method can be introduced. In the present embodiment, the following conditions are set (see FIG. 5). In FIG. 5, T1 and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 millisecond, T2 is 10 milliseconds, and the peak value of the triangular wave (the peak voltage during forming) is 14V. The forming process was performed in a vacuum atmosphere of about 1.3 × 10 ⁻⁴ Pa (1 × 10 ⁻⁶ Torr) for 60 seconds. The electron-emitting portion thus manufactured is in a state in which fine particles mainly composed of palladium element are dispersed and arranged, and the average particle diameter of the fine particles is 3n.
m.

Next, after the forming of all the surface conduction electron-emitting devices is completed, 1.3 × 10 ⁻⁴ Pa (1 × 10
^An exhaust pipe (not shown) was heated and welded with a gas burner at a degree of vacuum of about ⁻⁶ Torr) to seal the envelope.

Finally, getter processing is performed to maintain the degree of vacuum after sealing. This involves heating the getter disposed at a predetermined position (not shown) in the image display device by a heating method such as high-frequency heating immediately before performing sealing,
This is a process for forming a deposition film. The getter is mainly composed of Ba or the like.

In the image display device of the present invention completed as described above, each of the electron-emitting devices has a terminal D0 outside the container.
A scanning signal and a bias signal are respectively applied by signal generation means (not shown) through x1 to D0xm and D0y1 to D0yn to emit electrons, and a high voltage of several kV is applied to the metal back film through the high voltage terminal Hv. Then, an image is displayed by accelerating the electron beam to collide with, excite, and emit light from the phosphor film.

[0098]

According to the present invention, it is possible to realize a highly reliable electron source substrate which secures excellent electrical connectivity, an image display device provided with the electron source substrate, and a method of manufacturing these. Becomes possible.

The inhibition rate of electrical connectivity in the conventional configuration is as follows:
Although it differs depending on the process, according to the experiments of the inventor, for example, when there are 100 × 100 elements, there were about 50 conduction failures. The number of places where no conduction was required was improved to about several.

The present invention also relates to an image display device,
An excellent effect is obtained in a simple matrix type image display device using a surface conduction electron-emitting device.

[Brief description of the drawings]

FIG. 1 is a plan view of a surface conduction electron-emitting device portion of an electron source substrate according to an embodiment of the present invention.

FIG. 2 is a plan view illustrating a process flow of a method for manufacturing an electron source substrate according to an embodiment of the present invention.

FIG. 3 is a schematic diagram illustrating a typical configuration of a surface conduction electron-emitting device.

FIG. 4 is a cross-sectional view illustrating a process of a method for manufacturing a surface conduction electron-emitting device.

FIG. 5 is a characteristic diagram showing a typical waveform of forming according to the present invention.

FIG. 6 is a schematic diagram showing an example of a drive circuit configuration of an element.

FIG. 7 is a characteristic diagram showing typical characteristics of the surface conduction electron-emitting device according to the present invention.

FIG. 8 is a perspective view of an image display device according to the present invention.

9 is a pattern diagram of the phosphor film 108 in FIG.

FIG. 10 is a configuration diagram of a surface conduction electron-emitting device portion of the electron source substrate according to the first embodiment of the present invention.

FIG. 11 is a process chart showing a process flow of a method for manufacturing an electron source substrate according to Embodiment 1 of the present invention.

FIG. 12 is a configuration diagram of a surface conduction electron-emitting device portion of an electron source substrate according to Embodiment 2 of the present invention.

FIG. 13 is a process chart showing a process flow of a method for manufacturing an electron source substrate according to Embodiment 2 of the present invention.

FIG. 14 is a plan view of a surface conduction electron-emitting device according to a conventional example.

FIG. 15 is a plan view showing a manufacturing flow of a surface conduction electron-emitting device according to a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electrode part near an electron emission part 2 1st wiring layer 3 Interlayer insulating layer 4 2nd wiring layer 5 Film for electron emission part formation 6 Thin film for electron emission part formation 7 Third conductor layer

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yasuyuki Watanabe 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Shinsaku Kubo 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon (72) Inventor Yoshimi Uda 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term (reference) in Canon Inc. 5C031 DD17 5C036 EE14 EE19 EF01 EG02 EG12 EG29

Claims (14)

[Claims] A plurality of first conductor layers, a plurality of second conductor layers intersecting with the first conductor layers, a plurality of first conductor layers, and a plurality of second conductor layers intersecting with each of the first conductor layers; An electron source substrate provided at a position where the conductor layer intersects, and comprising a plurality of electron-emitting devices having a pair of electrodes connected to the first and second conductor layers and an electron-emitting portion; A manufacturing method, comprising: forming a plurality of the pair of electrodes on the substrate; forming a plurality of the first conductor layers so as to be connected to one of the pair of electrodes; Forming a third conductive layer for connecting the other of the electrodes to the second conductive layer; forming an insulating film covering a part of the first conductive layer; And a plurality of the second conductor layers so as to cover a part of the second conductor layer so as to be connected to the other of the pair of electrodes via the third conductor layer. An electron source manufacturing method of the substrate, characterized by a step of forming. 2. A boundary position where one of the pair of electrodes is connected to the third conductor layer and a boundary position where the third conductor layer and the second conductor layer are connected overlap each other. 2. The method according to claim 1, wherein the electron source substrate does not match. 3. The electron emitting section according to claim 1, wherein the electron emitting section is formed by forming a thin film for forming an electron emitting section, and applying an electric current to the thin film for forming an electron emitting section. 3. The method for manufacturing an electron source substrate according to item 2. 4. After forming the pair of electrodes, the first electrode is formed.
2. The method according to claim 1, further comprising the step of forming a plurality of lower conductive layers at positions where the plurality of first conductive layers are formed on the substrate before forming the conductive layers.
4. The method for manufacturing an electron source substrate according to any one of items 3 to 3. 5. The semiconductor device according to claim 1, wherein the third conductor layer and the second conductor layer are connected through a cutout portion formed in the insulating film. 2. The method for manufacturing an electron source substrate according to claim 1. 6. The semiconductor device according to claim 1, wherein the third conductor layer and the second conductor layer are connected through an opening formed in the insulating film.
Item 14. The method for manufacturing an electron source substrate according to Item 1. 7. A method for manufacturing an image display device, comprising: an electron source substrate; and a phosphor disposed at a position facing the electron source substrate and emitting visible light by irradiation of electrons, wherein the electron source substrate is provided. A method for manufacturing an image display device, comprising: manufacturing the image display device according to any one of claims 1 to 6. 8. A plurality of first conductor layers, an insulating film covering a part of the first conductor layer, and an insulating film formed on the insulating film and intersecting with each of the first conductor layers. A plurality of second conductor layers, each of the first conductor layers and each of the second conductor layers intersect with each other, one of the first conductor layers and the other of the insulation layers A pair of electrodes respectively connected to each of the second conductor layers through a space region of the film, and a plurality of electron-emitting devices each having an electron-emitting portion; and a third conductor layer below the insulating film. An electron source substrate provided, wherein the other of the pair of electrodes and the second conductor layer are connected via the third conductor layer. 9. A boundary position where one of the pair of electrodes is connected to the third conductor layer and a boundary position where the third conductor layer is connected to the second conductor layer overlap each other. 9. The electron source substrate according to claim 8, which does not match. 10. The method according to claim 8, wherein the electron-emitting portion is formed by forming a thin film for forming an electron-emitting portion, and subjecting the thin film for forming an electron-emitting portion to an energizing process. 10. The electron source substrate according to 9. 11. The semiconductor device according to claim 8, wherein each lower conductor layer is formed below each of said first conductor layers.
0. The electron source substrate according to any one of 0. 12. The semiconductor device according to claim 8, wherein said vacant region of said insulating film is formed in a notch shape.
12. The electron source substrate according to any one of 11. 13. The semiconductor device according to claim 8, wherein said space region of said insulating film is formed in an opening shape.
The electron source substrate according to any one of the above. 14. An electron source substrate according to claim 8, further comprising: a phosphor disposed at a position facing the electron source substrate and emitting visible light upon irradiation with electrons. An image display device characterized by the above-mentioned.