JP2002208596A - Silicon single crystal wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer which well displays the gettering effect by avoiding the abuses of the conventional IG method, contains little impurity or crystal strain on the surface layer at the device forming side and has gettering sites compactly existing in the wafer interior, without deteriorating various characteristics such as intensity characteristic, electric resistance characteristics, etc. SOLUTION: The silicon single crystal wafer contains a dopant at a concentration of 1.0×1012 atoms/cm3 or more with an oxygen concentration of 0.5×1018 atoms/cm3 or more and has a crystal lattice strain of 1×10-9 to 2×10-5 (atomic unit).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-quality silicon single crystal wafer for manufacturing a semiconductor device, and more particularly, to a semiconductor device having excellent gettering performance for heavy metals and the like and not having excessive crystal lattice distortion. The present invention relates to a silicon single crystal wafer having excellent characteristics as a forming wafer, and a silicon single crystal wafer having a crystal surface distortion of a surface layer portion forming a device smaller than that in a bulk and having a cleaned surface.

[0002]

2. Description of the Related Art Cleaning technology in integrated circuit manufacturing processes such as ICs, LSIs, and ULSIs has advanced remarkably in recent years. At present, pollution cannot be avoided. For impurity contamination of heavy metals and the like, cleaning and other cleaning techniques are of course important, but gettering techniques are complementary to them.

[0003] The gettering technique is to absorb and capture (getter) an impurity metal which has entered a wafer due to contamination or the like in a portion other than the element active region of a wafer (for example, inside the bulk of the wafer or on the back surface side). In this technique, impurity heavy metals are diffused and removed from the element active region to increase the cleanliness thereof, and the adverse effects on the device characteristics due to the heavy metals and crystal defects caused by the heavy metals are reduced. Therefore,
The gettering wafer has a source (gettering site) for absorbing and trapping impurities such as heavy metals, etc., depending on the type of the gettering site, intrinsic gettering (IG method) and extrinsic gettering (E).
G method).

[0004] Extrinsic gettering (EG
Method) is to intentionally provide damage or a polycrystalline film on the outside of the wafer, for example, on the back surface of the wafer, and to absorb and capture impurities such as heavy metals in the resulting strain field. On the other hand, intrinsic gettering (IG method) uses high-density minute defects distributed inside a silicon wafer as gettering sites, and uses the Czochralski method (C method).
In the case of a silicon single crystal wafer pulled up by the Z method), most of the silicon single crystal wafers are oxygen precipitates present in the bulk of the wafer,
Strictly speaking, it is a lattice strain field generated by the oxygen precipitate.

That is, in a silicon single crystal pulled by the CZ method, interstitial oxygen is present in supersaturation, and this interstitial oxygen reacts with Si during the heat treatment process to precipitate as SiO ₂ . At this time, the volume is expanded about twice by the transformation from Si to SiO ₂ , excess Si is released as interstitial Si, and dislocations and stacking faults are formed as secondary defects in the crystal. Such a precipitate of oxygen is subjected to BMD (Bulk Micro-Def.
ect), and as described above, the IG method uses this BMD
Becomes a gettering site.

[0006] The IG method is characterized by a higher persistence of gettering ability during the process than the EG method, and has recently been widely used. However, it is needless to say that in the IG method, it is necessary to secure a lattice strain field due to oxygen precipitates (BMD) within the wafer to a certain extent or more. In addition, BMD naturally acts as a crystal defect generation source.

Further, since BMD functions as a center for generation and recombination of minority carriers, if BMD is introduced into a surface layer forming a device, it causes a junction leak. BM
The type and existence density (distribution state) of D are greatly affected by other trace components other than oxygen contained in the crystal, precipitation nuclei introduced during crystal growth, heat treatment conditions during BMD formation, and the like. Are also qualitatively known.

[0008] Therefore, in the IG method, in order to avoid the above-mentioned adverse effects and to exert a good gettering effect, the oxygen concentration and the abundance and distribution of other trace components are appropriately controlled, and the crystallization heat Accurate management of the history is required. In particular, recently, the processing in the device forming process tends to be performed at a low temperature, and it becomes difficult to completely incorporate the impurity metal into the gettering site. From this point, more strict condition setting and management are required. It has been demanded. On the other hand, conventionally, in the CZ method, for the purpose of mainly controlling the oxygen precipitate density and the resistance value of a wafer, for example, a small amount of boron, phosphorus, antimony or the like is doped as a dopant.

[0009]

It is thought that the addition amount of these dopants affects the state of generation of the internal strain field in the IG wafer. Surprisingly, however, the conventional relationship between the dopant amount and the crystal lattice distortion has been considered. Has not received much attention, and at least their quantitative relations have been hardly elucidated. In view of the circumstances described above, it has been difficult to say that the proper conditions for avoiding the above-mentioned adverse effects of the IG method and effectively exhibiting a good gettering effect have been sufficiently understood.

Based on the above background, the present inventors have conducted intensive studies focusing on the conditions for obtaining a good gettering effect, particularly on the relationship with the dopant amount, and found that the degree of distortion of the crystal lattice is within a specific range. The present inventors have found that the above-mentioned good gettering effect can be obtained, and that it is important to control the dopant concentration in a specific range for this purpose. Based on this finding, the present invention has been completed.

A first object of the present invention is to provide a silicon single crystal wafer capable of avoiding the adverse effects of the conventional IG method and exhibiting a good gettering effect. A second object of the present invention is to provide a gettering site inside a wafer (bulk) without impairing various characteristics such as strength characteristics and electric resistance characteristics, in which almost no impurities or crystal distortions exist in the surface layer on the device formation side surface. Is to provide a silicon single crystal wafer which is densely present.

[0012]

According to the first aspect of the present invention, which has been made to solve the above technical problems, when the oxygen concentration is 0.5 × 10 ¹⁸ atoms / cm ³ or more and the dopant is 1.0
A silicon single crystal wafer is provided, which is contained at a concentration of × 10 ¹² atoms / cm ³ or more, and has a crystal lattice strain in a range of 1 × 10 ⁻⁹ to 2 × 10 ⁻⁵ (atomic unit).

Here, the dopant is boron, phosphorus,
Desirably, at least one selected from antimony, arsenic, tin, germanium, carbon, and nitrogen. The concentration of the dopant is 1.0 × 10 ^{12 to} 2.0 ×
It is desirable to be within the range of 10 ¹⁸ atoms / cm ³ . Further, the dopant is nitrogen and the concentration is 1.0 × 10
It is desirable to be in the range of ^{12 to} 1.0 × 10 ¹⁴ atoms / cm ³ .

According to the second aspect of the present invention to solve the above technical problem, the oxygen concentration is 0.5 × 10 ¹⁸ atom
At least s / cm ³ , at least one dopant selected from boron, phosphorus, antimony, arsenic, tin, germanium, and carbon is 1.0 × 10 ^{13 to} 2.0 × 10 ¹⁸ atoms / c.
Nitrogen was added to a silicon single crystal contained in a concentration range of m ³ .
Doping in a concentration range of 0 × 10 ^{13 to} 2.0 × 10 ¹⁸ atoms / cm ³ , and further, high-temperature treatment at 1000 ° C. or higher in an atmosphere of a reducing gas or an inert gas, or a mixed gas of both, Nitrogen concentration of 1.0 × 10 ¹³ atoms / cm ³ or less,
The crystal lattice strain is reduced by 2 × at a depth of 20 μm from the wafer surface.
Provided is a silicon single crystal wafer characterized in that the ^{concentration is} 10 ^-6 (atomic unit) or less.

Here, it is desirable that the atmospheric gas in the high-temperature treatment is at least one selected from hydrogen, nitrogen, argon, helium, and neon. Further, it is desirable that the high temperature treatment temperature is 1000 to 1350 ° C. and the atmosphere gas is hydrogen gas.

The silicon single crystal wafer according to the first aspect of the present invention has a lattice distortion of 1 × 10 ⁻⁹ to 2 × 10 ⁻⁵ (atomic unit) in an inner bulk portion of the silicon single crystal wafer, and has a dopant. It has a structural characteristic in that it is included in a specific concentration range of 1.0 × 10 ¹² atoms / cm ³ or more, preferably 1 × 10 ¹² to 2 × 10 ¹⁸ atoms / cm ³ . When a dopant is added to a silicon crystal, a compressive or tensile stress is generated in a silicon (Si) lattice, and a strain is generated corresponding to the type and amount of the doped element. As is clear from the examples described later, in the CZ method silicon single crystal wafer, the wafer is good only when the doping amount of the dopant is controlled within the above specific range and the lattice distortion of the internal bulk of the wafer is within the above range. High gettering performance.

In the above invention, a suitable dopant is at least one selected from boron, phosphorus, antimony, arsenic, tin, germanium, carbon, and nitrogen. In particular, nitrogen has a very high degree of strain (shrinkage coefficient) of the Si crystal per equivalent as compared with oxygen and other dopants as an absolute value, and also has a higher diffusion rate at a high temperature than oxygen, so that nitrogen is not heat-treated. It is most preferable because it has many advantages such as easily diffusing out from the surface layer of the wafer, and being able to adjust the doping amount (concentration) accurately and easily.

Further, the silicon single crystal wafer according to the second aspect of the present invention is characterized in that a dopant other than nitrogen, that is, at least one selected from boron, phosphorus, antimony, arsenic, tin, germanium, and carbon is 1.0 × 10 4 ^{13 to} 2.0 × 1
Nitrogen is further added to the silicon single crystal doped in the concentration range of 0 ¹⁸ atoms / cm ³ to 1.0 × 10 ^{13 to} 2.0 × 10 ¹⁸ ato.
doped in a concentration range of ms / cm ^3, the wafer, reducing gas such as hydrogen, nitrogen, argon, helium, inert gases neon or atmosphere of a mixed gas of a reducing gas and an inert gas, 1000 ° C. or higher, preferably 1000 to 13
High temperature treatment at 50 ° C. to reduce the surface nitrogen concentration to 1.0 × 10 ¹³
It is a structural feature that atoms / cm ³ or less and crystal lattice distortion is 2 × 10 ⁻⁶ (atomic unit) or less at a depth of 20 μm from the surface. This silicon single crystal wafer is particularly suitable as an IG wafer in which the surface layer forming the device has almost no impurities and no crystal distortion and the bulk has a dense gettering site.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The first and second embodiments of the present invention are described below.
This will be described in detail based on FIG. The first embodiment of the present invention
Oxygen concentration of recon single crystal wafer is old ASTM test standard
And 0.5 × 10¹⁸atoms / cm^Three That is all for the dopant
To 1.0 × 10¹²atoms / cm^Three Containing at the above concentration, and
Crystal lattice distortion is 1 × 10^-9~ 2 × 10^-Fiveof
Manufactured from CZ single crystal ingots in the range
It is. In industrially produced CZ silicon single crystals
Oxygen concentration is usually 0.5 × 10 ¹⁸~ 1 × 10¹⁸atoms / cm
^Three Therefore, it is particularly limited as far as the oxygen concentration is concerned.
Not.

As the dopant to be used, those usually used as dopants can also be used without any particular limitation. Boron, phosphorus, antimony, arsenic, tin, germanium, carbon, nitrogen, and A combination of two or more of these can be exemplified. Of these, in the present invention, the use of nitrogen is particularly preferred, which will be described in detail later.

In the silicon single crystal wafer according to the first aspect of the present invention, the dopant is set to 1.0 × 10 ¹² atoms / cm ^3.
As described above, doping is preferably performed within the concentration range of 1 × 10 ¹² to 2 × 10 ¹⁸ atoms / cm ³ , thereby reducing the lattice distortion of the silicon single crystal in the bulk inside the wafer to 1 × 10 ⁻⁹ to 2 × 10 ^9.
Control within the range of 10 ^-5 (atomic unit).

As shown in the examples described later, the above dopant, in particular, nitrogen is doped in the specific concentration range specified in the present invention, and the lattice distortion of the bulk single crystal of the wafer is reduced to 1 × 10 4.
^The one in the range of ^{-9 to} 2 × 10 ^-5 (atomic unit) exhibits excellent gettering ability against heavy metal contaminants such as Ni. On the other hand, when the lattice strain is below the lower limit, gettering performance is poor, and when the lattice strain exceeds the upper limit, the crystal strength is not sufficient (crystal defects such as slip dislocation are easily generated). It has drawbacks such that defects are likely to remain, which is not preferable in any case.

Next, a more detailed description will be given with reference to FIGS. When an impurity element is added as a dopant to a pure silicon single crystal containing no impurities (lattice constant: 5.43010 °), a compressive or tensile stress is generated in a silicon (Si) lattice. This state is clear by measuring the precise lattice constants of a pure silicon single crystal containing no impurities (perfect crystal) and a silicon single crystal (imperfect crystal) doped with various dopants at various concentrations, and comparing these. You can know.

For such a precise measurement of the lattice constant, for example, an X-ray diffraction method (bond method) can be used. The bond method is a method used for measuring the absolute lattice constant of a perfect crystal such as silicon, and FIG.
FIG. 4 is a diagram produced using a lattice constant value obtained by this method. FIG. 1 shows the relationship between the doping concentration (atoms / cm ³ ) of various dopants including oxygen and the precise lattice constant (Å) of Si in each case. The lattice constant in FIG. 1 is (4) under the measurement conditions of an X-ray wavelength of 0.154 nm (target: Cu), an acceleration voltage of 20 kV, and an acceleration current of 30 mA.
00) It is obtained from the angle (black angle) at which the diffraction intensity is maximized using reflection.

In order to determine the lattice distortion (ε) of the crystal containing the dopant from the black angle (θ _B ), first, for each crystal, the lattice spacing ( d) is obtained, and 2d sin θ _B = nλ (1) Each lattice constant is calculated from the surface interval (d).

Then, from the lattice constant (a ₀ ) of silicon containing no impurity and the lattice constant (a _i ) of silicon containing a dopant, a lattice distortion (ε) is obtained by the following equation (2). ε = (a ₀ −a _i ) / a ₀ = βC (2) where C is a dopant concentration and β is a coefficient called a contraction coefficient. FIG. 3 shows the lattice strain at each concentration of each doped crystal calculated by the above method from the precise lattice constant of each silicon crystal at each doping concentration of the various dopants shown in FIG. In FIG. 3, there are lattice distortions of minus (shrinkage) and plus (expansion), but the diagram shows the distortion as an absolute value.

On the other hand, as clearly shown in Examples described later, the CZ method silicon single crystal wafer containing the dopant has a crystal lattice distortion of 1 × 10 ⁻⁹ or ^{less in the} inner bulk portion.
When it is in the range of 2 × 10 ⁻⁵ atomic units, a good gettering effect is exhibited, the state of the device forming surface layer is good, and the wafer strength does not decrease. Therefore, from FIG. 3, the dopant concentration of boron, phosphorus, antimony, arsenic, tin, germanium, carbon, nitrogen, etc. is 1.0 × 10 ^{12 to} 2.0.
It is found that the density is preferably within the range of × 10 ¹⁸ atoms / cm ³ .

Next, dopan which is particularly preferred in the present invention
The nitrogen that can be mentioned as a catalyst is described below. Figure
1. As shown in FIG. 3, nitrogen as a dopant
Means that the concentration is 1 × 10 ¹²From 1 × 10¹⁴atoms / cm^Three Low concentration
Equivalent to other dopants such as oxygen, carbon, and boron in the temperature range
Shows the lattice distortion of Nitrogen is similar to oxygen in silicon
It acts in the direction of increasing the lattice constant (expansion). Normal,
For example, the atomic number is higher than silicon (Si) such as carbon and boron.
Elements with smaller numbers have smaller covalent radii and lower lattice constants.
Make it smaller. On the other hand, antimony (Sb) and tin (Sn)
Elements with large atomic numbers, such as
Increase the grid spacing. Each of these elements is
It enters the substitution position of the con single crystal and bonds.

On the other hand, when attention is paid to oxygen, it acts to increase the lattice constant of silicon even though the atomic radius is smaller than that of silicon (see FIGS. 1 and 2).
It is also known that oxygen exists at interstitial positions in a silicon single crystal without interatomic oxygen as a single atom. Here, regarding nitrogen, the shared radius becomes abnormally large (see FIG. 2), and it is not considered that the nitrogen is at the substitution position. That is, it can be concluded that nitrogen exists at interstitial positions in a silicon single crystal like oxygen and exists in a state other than a single atom. Therefore, nitrogen behaves almost in the same way as oxygen in the mechanism of generation of crystal lattice distortion of the dopant, and its effect is larger than that of oxygen (the nitrogen has a covalent radius of 1.48 with respect to oxygen of 1.48. .7, see FIG. 2).

In the case of a nitrogen dopant, even if the dopant concentration is lower by at least four orders of magnitude than other dopants, substantially the same crystal lattice distortion can be exhibited. That is, in order to cause a crystal lattice strain of 1 × 10 ⁻⁹ to 2 × 10 ⁻⁵ atomic units on the wafer, the doping concentration is 1.0 × 10 ¹² to 1.0 × 10 ^−12.
A low concentration of 1.0 × 10 ¹⁴ atoms / cm ³ is sufficient. for that reason,
This is preferable because it is possible to prevent the element formation performance of the wafer from being impaired due to a large amount of impurity elements such as dopants mixed therein.

Next, a silicon single crystal wafer according to the second invention will be described. This silicon single crystal wafer is further prepared by subjecting a Czochralski method (CZ method) silicon single crystal doped with both nitrogen and other dopants in a specific concentration range to 1000 g under an atmosphere of a reducing gas, an inert gas or the like. High-temperature treatment at a temperature of not less than ℃, the nitrogen concentration on the surface is 1.0 × 10 ¹³ atoms / cm ³ or less, and the crystal lattice distortion is 2 × 10 ^-6 (atomic unit) or less at a depth of 20 μm from the surface. . The mechanism of the generation of crystal lattice distortion caused by nitrogen and other dopants in the inner bulk portion of the silicon single crystal wafer is the same as that described for the wafer of the first invention.

In the wafer according to the present invention, after the nitrogen is doped, the wafer is made of a reducing gas such as hydrogen,
Alternatively, in an atmosphere of an inert gas such as nitrogen, argon, helium, or neon, or a mixed gas of two or more of these gases, the temperature is 1000 ° C. or higher, more preferably 1000 to 1000 ° C.
The high temperature treatment is performed at a temperature of 1350 ° C., usually for 0.1 to 4 hours. At this time, nitrogen in the silicon single crystal wafer diffuses out of the surface of the silicon single crystal wafer. Oxygen diffuses similarly, but the diffusion coefficient of nitrogen is about three orders of magnitude greater than that of oxygen, and under the same conditions, nitrogen diffuses much faster than oxygen. As a result, the nitrogen concentration in the surface layer of the silicon single crystal wafer decreases.

FIG. 4 is a graph showing the distribution of the residual nitrogen concentration in the depth direction from the surface when the nitrogen-doped silicon single crystal wafer is treated in a hydrogen atmosphere at 1200 ° C. for 1 hour. Thus, for example, when the nitrogen concentration in the wafer before the heat treatment is about 1 × 10 ¹⁵ atoms / cm ³ ,
The surface nitrogen concentration after the above hydrogen annealing treatment is about 1 × 1 by the analytical detection limit (SIMS (secondary ion mass spectrometry) method).
0 ¹³ atoms / cm ³ or less).

Further, the crystal lattice strain distribution in the depth direction of the wafer at this time increases or decreases in accordance with the concentration of impurities such as nitrogen, as shown in the diagram of FIG. The degree of lattice distortion increases as one goes through the inner bulk. As described above, in the silicon single crystal wafer according to the second aspect of the present invention, the surface layer (element active region layer) of the wafer forming the device is almost a defect-free layer, and the internal bulk has gettering sites of an appropriate density. Since it is formed, it is extremely suitable as a silicon single crystal wafer for semiconductor production.

[0035]

EXAMPLES Example 1 Boron was 1.34 × 10 ¹⁵ atoms
200 mm diameter CZ <10 doped at a concentration of s / cm ³
0> A silicon single crystal wafer (Comparative Example 1), a Hi wafer (Comparative Example Product 2) obtained by annealing the same CZ wafer as above at 1200 ° C. for 1 hour in a hydrogen atmosphere, and a dopant (boron) concentration of 1.34. × 10 ¹⁵ atoms / cm ³ C
Each of the Z wafers was further doped with nitrogen at a concentration of 4 × 10 ¹³ atoms / cm ³ , and was annealed at 1200 ° C. for 1 hour in a hydrogen atmosphere to prepare wafers (products of the present invention).

Each of these wafers was subjected to Ni contamination, and a recovery heat treatment at 1000 ° C. was performed to monitor the recovery of the generation lifetime. Ni
The contamination was caused by adding NiCl dropwise to a mixed solution of NH ₄ OH and H ₂ O ₂ , warming to about 60 ° C., immersing each wafer in this liquid for about 1 hour, washing with water for several seconds, And dried. At this time, the amount of Ni contamination on the surface of the silicon single crystal wafer is 5 to 6 × 10 ¹² atoms / cm ² (ICP-MS).
Met.

For each of these Ni-contaminated wafers, 10
Heat treatment is performed at 00 ° C. (in an argon atmosphere) for 50 minutes to 9 hours, and thereafter, a 45 nm oxide film is formed on the surface of each silicon single crystal wafer, and a 400 nm thick aluminum electrode (3.14 mm ² ) is formed. (MOS structure). A pulse voltage of 5 V was applied to these MOS structures to measure Ct characteristics. Under this condition, the depletion layer (defect-free layer) extends about 2.5 μm. That is, 2.5 from the surface
It is possible to evaluate the integrity (without defects, heavy metals, and the like) of the μm region. The results are shown in FIG.

From FIG. 5, it can be seen that recovery of the generated lifetime is not observed in the comparative example product 1 which is a normal CZ wafer, no matter how much heat treatment is applied. Further, a stronger recovery was observed in the product of the present invention in which the CZ wafer further doped with nitrogen was annealed at a high temperature.

[0039]

The silicon single crystal wafer according to the present invention has an excellent heavy metal impurity by being doped with a dopant impurity such as nitrogen at a specific concentration so that the crystal lattice distortion is within a predetermined range. Has gettering performance. Further, a reducing gas, a silicon single crystal doped with nitrogen and other dopants at a specific concentration, respectively,
Alternatively, the silicon single crystal wafer according to the present invention, which has been subjected to a high temperature treatment at a specific temperature under an inert gas atmosphere, has a device-forming surface layer that is a defect-free layer having an extremely clean surface, while the inner bulk has gettering. This is a silicon single crystal wafer which is extremely suitable for semiconductor production in which sites are densely distributed.

[Brief description of the drawings]

FIG. 1 is a diagram showing the relationship between the concentration of various dopants and the crystal lattice constant of Si.

FIG. 2 is a diagram illustrating a relationship between an atomic number of a dopant element and a covalent bond radius.

FIG. 3 is a diagram showing a relationship between concentrations of various dopants and lattice distortion of a Si crystal.

FIG. 4 is a diagram showing a change in lattice strain in the depth direction of a wafer after hydrogen annealing.

FIG. 5 is a diagram showing changes in the generation lifetime of various wafers contaminated with Ni metal.

 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshiro Minami 6-865-15 Higashiko, Seiro-cho, Kitakanbara-gun, Niigata F-term in Niigata Toshiba Ceramics Co., Ltd. 4G077 AA02 AB01 BA04 CF10 EB01 FB03 FE05 FE11

Claims (5)

[Claims] An oxygen concentration of 0.5 × 10 ¹⁸ atoms / cm ³ or more, a dopant concentration of 1.0 × 10 ¹² atoms / cm ³ or more, and a crystal lattice distortion of 1 × 10 ^-9 to 2 A silicon single crystal wafer characterized by a range of × 10 ^-5 (atomic unit). 2. The silicon single crystal wafer according to claim 1, wherein the dopant is at least one selected from boron, phosphorus, antimony, arsenic, tin, germanium, carbon, and nitrogen. 3. The concentration of the dopant is 1.0 × 10 ^12.
3. The silicon single crystal wafer according to claim 1, wherein the thickness is within a range of 2.0 × 10 ¹⁸ atoms / cm ^{3. 4} . 4. The silicon single crystal wafer according to claim 3, wherein the dopant is nitrogen and the concentration is in a range of 1.0 × 10 ^{12 to} 1.0 × 10 ¹⁴ atoms / cm ^3. . 5. An oxygen concentration of at least 0.5 × 10 ¹⁸ atoms / cm ³ and at least one dopant selected from boron, phosphorus, antimony, arsenic, tin, germanium, and carbon in an amount of 1.0 × 10 ¹³ to 1.0 × 10 ¹³ atoms / cm ^3. Nitrogen was added to a silicon single crystal containing 2.0 × 10 ¹⁸ atoms / cm ^{3 in} a concentration range of 1.0 × 10 ¹³ atoms / cm ^3.
To a concentration of 2.0 × 10 ¹⁸ atoms / cm ³ , and a high-temperature treatment at 1000 ° C. or more in an atmosphere of a reducing gas or an inert gas, or a mixed gas of both, to reduce the nitrogen concentration on the surface to 1%. 0.0 × 10 ¹³ atoms / cm ³ or less, and a crystal lattice distortion of 2 × 10 ⁻⁶ (atomic unit) at a depth of 20 μm from the surface.
A silicon single crystal wafer characterized by the following.