JP2002203475A - Electron source substrate, its manufacturing method and image display device provided with it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an image display device capable of high-quality display by resolving a problem of ununiformity of a screen caused by wiring resistance and to provide its manufacturing method. SOLUTION: A plurality of Y-direction lines 20 and a plurality of X-direction lines 22 formed by intercrossing them and a plurality of electron emission elements 18 respectively connected to the intercrossing parts of the Y-direction lines and the X-direction lines are formed on a back substrate 12. The Y- direction lines are formed in multiple first grooves 23a formed on the back substrate. The X-direction lines are formed, through interlayer insulating layers 34, in multiple second grooves 32b formed on the back substrate and respectively extending by crossing the first grooves and the Y-direction lines.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an electron source substrate provided with a plurality of electron-emitting devices, a method of manufacturing the same, and an image display device provided with the electron source substrate.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices, such as a hot-cathode electron-emitting device and a cold-cathode electron-emitting device, have been known as electron-emitting devices used in image display devices and the like. Among these, as a cold cathode electron emitting element, a surface conduction type electron emitting element, a field emission type electron emitting element, a metal / insulating layer / metal type electron emitting element, and the like are known.

There are various types of field emission type electron-emitting devices. For example, there is a planar type field emission device disclosed in Japanese Patent Application Laid-Open No. 2-46636, which is mounted on a substrate. And the wires are connected to form an electron emission source.

Further, the surface conduction electron-emitting device utilizes a phenomenon in which electrons are emitted by passing a current through a small-area thin film formed on a substrate in parallel with the film surface. For example, Japanese Patent Application Laid-Open Nos. 64-031332 and 1-228374 disclose an example in which a large number of surface conduction emission devices are arranged and formed.
9. JP-A-2-257552 and the like disclose an electron source in which surface-conduction electron-emitting devices are arranged in parallel, and both ends of each device are connected by wiring, and a number of rows each connected to each other are arranged.

[0005] By combining the above-described electron-emitting device with a phosphor that emits visible light by electrons emitted from the electron-emitting device, a self-emission device having a relatively large screen and excellent display quality can be obtained. A light-emitting image display device can be configured.

[0006]

However, when a large-area image display device is constructed using electron-emitting devices,
For example, in a manufacturing process of a surface conduction electron-emitting device,
When forming an electrode or a wiring pattern by a thin film, usually, a metal thin film of an electrode and a wiring material is formed on a substrate by vacuum deposition or the like, and then the metal thin film is formed by patterning using photolithography and etching techniques. I do.

However, when such an electrode and a wiring pattern are manufactured on a large substrate having a diagonal dimension of 40 cm or more by a photolithography method or an etching technique, the wiring length becomes long and high-density wiring is performed. Therefore, it is necessary to make the wiring thin, and when a thin film having a thickness of about 1 to several μm is used, an increase in wiring resistance becomes a problem.

That is, when a constant power consumption occurs in each element section, a constant voltage drop occurs between adjacent elements. This voltage drop is integrated at the screen position, and even if each voltage drop is small and negligible, it appears as a drive voltage difference at a macro screen position, resulting in a difference in display luminance and impairing image uniformity. And such a problem is XY
This is a problem common to the self-luminous display devices using the matrix drive method, and in any of the image display devices, it is desired to reduce the wiring resistance with the increase in the density of the large screen.

When the width of the wiring is widened to reduce the wiring resistance, the area of one element in the corresponding pixel becomes large, and it becomes difficult to display a high-definition image. In addition, a method of forming a wiring having a thick film of several μm to several tens of μm using a process of printing a conductive paste and an insulating paste on a substrate for part or all of the wiring may be considered. When it becomes, it becomes easy to peel off from the substrate. At the same time, when a thick-film wiring is present around the electron-emitting device, the trajectory of electrons is affected by an electric field or the like generated by the wiring, which causes deterioration in image quality.

According to the method for manufacturing an electron source disclosed in Japanese Patent No. 3044434, a plurality of grooves are formed in an insulating substrate, and these grooves are filled with a wiring material to form a first wiring electrode. Forming an insulating layer on the insulating substrate and the first wiring electrode, and further forming a plurality of grooves in the insulating layer;
These grooves are filled with a wiring material to form second wiring electrodes. Then, a surface conduction type emission element is formed on the insulating layer,
The electron source is connected to the first and second wiring electrodes.

According to the electron source substrate formed by such a manufacturing method, it is possible to form the first wiring electrode thick by forming the first wiring electrode in the groove formed in the insulating substrate. The wiring resistance can be reduced.

However, in such an electron source substrate, it is very difficult to adjust the planarity of the insulator layer formed on the first wiring, and it is difficult to form a fine electron-emitting device. For this reason, after the insulator layer is formed, its surface may be polished or the like to adjust the planarity.

The present invention has been made in view of the above points, and has as its object to solve the problem of screen non-uniformity caused by wiring resistance and to provide an electron source substrate capable of high-quality display, a method of manufacturing the same, And an image display device provided with an electron source substrate.

[0014]

To achieve the above object, an electron source substrate according to the present invention comprises an insulating substrate having first and second main surfaces facing each other, and an electron source substrate formed on the first main surface of the insulating substrate. A plurality of first wirings respectively provided in the plurality of first grooves formed, and a plurality of second grooves formed on the first main surface of the insulating substrate and extending across the first wirings, respectively. A plurality of second wirings provided via an insulating layer; and a first wiring of the insulating substrate near an intersection of the first wiring and the second wiring.
A plurality of electron-emitting devices provided on the main surface and connected to the first and second wirings, respectively.

In the above-mentioned electron source substrate, each first wiring is
It is formed by baking the conductive paste filled in the first groove, or is formed by a plating film, a deposition film or the like formed in the first groove. Further, the second wiring is formed by baking a conductive paste filled in the second groove via the insulating layer, or formed in the second groove via the insulating layer. It is formed by a plating film, a vapor deposition film, or the like.

A method for manufacturing an electron source substrate according to the present invention comprises:
A plurality of elongated first grooves are formed in a first main surface of an insulating substrate having opposing first and second main surfaces, and a plurality of first wirings are formed by filling the first grooves with a conductive material. Forming a plurality of elongated second grooves extending across the first groove and the first wiring on the first main surface of the insulating substrate, and filling each of the second grooves with an insulating material to form an insulating layer; Then, a third groove extending along the second groove is formed in the insulating layer formed in each of the second grooves, and the third groove is filled with a conductive material to form a plurality of second wirings. Forming a plurality of electron-emitting devices on the first main surface of the insulating substrate near an intersection of the first and second wirings, and connecting each of the electron-emitting devices to the first and second wirings; It is characterized by:

Further, according to a method of manufacturing an electron source substrate according to the present invention, the first, second, and third grooves are formed by sandblasting. Furthermore,
An image display device according to the present invention is provided with the electron source substrate according to any one of claims 1 to 7. According to another aspect of the present invention, there is provided an image display device, wherein the electron source substrate according to any one of claims 1 to 7 is disposed so as to face the electron source substrate at a predetermined distance, and the electron emission element is provided. And a counter substrate having a light-emitting surface that emits visible light when excited by the above.

According to the electron source substrate, the method of manufacturing the same, and the image display device configured as described above, both the first and second wirings are connected to the first and second wirings formed on the insulating substrate.
By providing in the groove, both the first and second wirings can be formed into a thick film by using a conductive paste or a plating film. As a result, it is possible to reduce the wiring resistance of the first and second wirings and improve the image quality. Further, by providing the first and second wirings in the respective grooves, even when the wirings are made thicker, they are hardly peeled off from the insulating substrate, and the reliability can be improved.

Further, according to the present invention, by providing the first and second wirings in the grooves formed in the insulating substrate,
Even when the first and second wirings are made thicker to reduce the wiring resistance, these wirings can be prevented from protruding significantly from the surface of the insulating substrate, and can be provided flush with the surface of the insulating substrate. Therefore, the trajectory of the electrons emitted from the electron-emitting device is not affected by the electric field generated from the first and second wirings, and the image quality can be further improved.

By using an electron source substrate having reduced wiring resistance and having no effect on the electron-emitting devices due to the wiring, the problem of non-uniformity of the screen can be solved and an image capable of high quality display can be obtained. A display device can be obtained.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an image display device according to an embodiment of the present invention will be described in detail with reference to the drawings.

As shown in FIG. 1, the image display device includes a rectangular transparent insulating substrate, for example, a front substrate 10 and a rear substrate 12 made of glass, and these substrates are opposed to each other with a predetermined gap. Are located. The front substrate 10 and the rear substrate 12 are joined to each other via a rectangular supporting frame 14 made of glass to form a flat rectangular vacuum envelope 15. Support frame 14
Are sealed to the periphery of the back substrate 12 and the periphery of the front substrate 10 by, for example, frit glass made of low melting point glass, a metal sealing material, or the like. The front substrate 10
A large number of spacers (not shown) made of glass, ceramics or the like are arranged at predetermined intervals between the substrate and the rear substrate 12 in order to maintain the intervals between these substrates.

On the inner surface of the front substrate 10 functioning as a counter substrate, a phosphor screen 16 as a phosphor screen is formed. The phosphor screen 16 is configured by arranging red, blue, and green phosphor layers and a black coloring layer.
These phosphor layers are formed in stripes or dots. A metal back 17 made of aluminum or the like is formed on the phosphor screen 16.

On the inner surface (first main surface) of the rear substrate 12, a large number of electron-emitting devices 18 each emitting an electron beam are provided as electron emission sources for exciting the phosphor layer of the phosphor screen 16. . These electron-emitting devices 18
Are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. A large number of Y-directional wirings (first wirings) 20 and X-directional wirings (second wirings) 22 for applying a voltage to and driving the electron-emitting devices 18 are provided in a matrix on the rear substrate 12. Each electron-emitting device is connected to these wirings near the intersection of the Y-direction wiring and the X-direction wiring. Here, the Y-direction wiring 20 is a scanning wiring, and the X-direction wiring 22 is, for example, a modulation wiring. Thereby, the rear substrate 12 constitutes an electron source substrate.

One end or both ends of each Y-direction wiring 20 is led out to the outer surface of the rear substrate 12 via a conductive portion 24a extending through the rear substrate 12, and is connected to a drive circuit substrate (not shown). . Similarly, one end or both ends of each X-direction wiring 22 is led out to the outer surface of the rear substrate 12 via a conductive portion 24b extending through the rear substrate 12, and connected to a drive circuit substrate (not shown). .

As shown in FIG. 2, each electron-emitting device 18 is configured as a surface conduction electron-emitting device. That is, each electron-emitting device 18 includes a conductive thin film 27 and a pair of device electrodes 28, 3 connected to the Y-direction wiring 20 and the X-direction wiring 22 and applying a voltage to the conductive thin film 27.
0. At the center of the conductive thin film 27, an electron emission portion formed of a very small crack is formed.

The electrode interval between the device electrodes 28 and 30 is several μm to several hundred μm, the film thickness is several hundred angstroms to several thousand angstroms, and a metal thin film formed by a vacuum evaporation method or a sputter evaporation method is formed by photolithography. It is formed as appropriate by patterning or by a printing method using an inkjet printer.

The thickness of the conductive thin film 27 is preferably set in the range of several tens of angstroms to several thousand angstroms, and the conductive thin film 27 is also formed into a pattern by a photolithography method, a printing method, or the like, and is individually separated. ing.

As shown in FIGS. 2 and 3, a large number of Y
The directional wirings 20 are provided in a large number of first grooves 32a formed on the inner surface of the rear substrate 12, and extend in parallel with each other at a predetermined pitch. On the inner surface of the back substrate 12, a large number of second grooves 32b are formed extending across the Y-directional wiring 20 and the first grooves 32a, and extend in a direction perpendicular to the Y-directional wiring. Each second groove 32b is provided with a first groove 3
It is formed shallower than 2a.

On the inner surface of each second groove 32b, an interlayer insulating layer 34 is formed over the entire length. Further, a third groove 32 extending along the second groove 32b is formed in each interlayer insulating layer 34.
c is formed. The X-directional wiring 22 is provided in these third grooves 32c. Thus, the large number of X-direction wirings 22 extend in parallel with each other at a predetermined pitch and in a direction perpendicular to the Y-direction wirings 20. Each Y
At the intersection of the directional wiring 20 and the X-directional wiring 22, these wirings overlap via the above-described interlayer insulating layer 34.

The Y direction wiring 20, the X direction wiring 22,
The interlayer insulating film 34 is formed substantially flush with the inner surface of the rear substrate 12. An element electrode 28 of the electron-emitting device 18 is formed integrally with each of the Y-direction wirings 20,
It extends in a direction substantially perpendicular to the Y-direction wiring 20. Each X-direction wiring 22 has an electron-emitting device 18
Are formed integrally and extend in a direction substantially perpendicular to the X-directional wiring 22.

Next, a more detailed structure of the above-described image display device will be described together with a method of manufacturing the same. First, a well-washed rear substrate 12 is prepared as a transparent insulating substrate. Examples of the back substrate 12 include quartz glass, glass having a reduced impurity content such as Na, blue plate glass, a glass plate obtained by laminating SiO ₂ on a blue plate glass by sputtering or the like, and ceramics such as alumina. Can be used.

Subsequently, as shown in FIG. 4 and FIG. 5, first, a resist film is formed on the inner surface of the back substrate 12. At the same time, a mask master is created based on desired data, and the mask master is arranged on the resist film. Then, the resist film is exposed and developed through the mask master, and the back substrate 1 is exposed.
A resist having a desired pattern is formed on the inner surface of Step 2. Here, the resist has a desired pattern corresponding to the groove 32 in which the Y-directional wiring 20 is formed and the element electrode 28.

Next, the inner surface of the back substrate 12 is sandblasted from the resist side, and a number of grooves 32 each having a projection for forming an element electrode are formed. As blast material,
For example, using WA or SiC, blasting was performed for about 2 to 3 hours. When the thickness of the back substrate 12 is 1.1 mm, each groove 32 is formed to have a depth of about 0.5 mm and a width of 0.35 mm. The pitch of the grooves 32 was set to about 0.6 mm. After the above-described groove 32 is formed, the remaining resist is peeled off from the back substrate 12. The method of forming the groove 32 is not limited to sandblasting, but may be a mechanical cutting method using general tizing, another mechanical cutting method, or a chemical deletion method such as chemical etching.

Subsequently, the conductive paste is filled in the grooves 32 and the projections by screen printing or the like, and then the temperature is about 480 ° C.
By baking, a plurality of device electrodes 28 protruding from the Y-directional wiring 20 located in the groove 32 and from the Y-directional wiring 20 are formed. Ag paste ink or the like was used as the conductive paste, and the Y-directional wiring 20 having a width of about 100 μm was formed.

The Y-direction wiring 20 and the device electrode 28
In addition to Ag, Pd, Au, RuO ₂ , Pd−
A printing paste composed of a metal or metal oxide such as Ag, frit glass, a polymer as a binder, a suitable solvent, and the like can be used. Further, the Y-directional wiring 20 and the device electrode 28 are not limited to the conductive paste,
It can also be formed by electroless plating or the like.

Next, as shown in FIG. 6, a number of second grooves 32b extending across the first grooves 32a and the Y-directional wirings 20 are formed on the inner surface of the back substrate 12 by the same sand blasting method as described above. Form. In this case, each second groove 32b is formed to have a depth of about 0.3 mm and a width of 0.1 mm. The pitch of the second grooves 32b was set to about 0.2 mm. The method for forming the second groove 32b is not limited to sandblasting, but may be a mechanical cutting method using general tying, another mechanical cutting method, or a chemical removal method such as chemical etching.

Subsequently, as shown in FIG. 7, each second groove 32b is filled with an insulating material such as frit glass by screen printing or the like, and an interlayer insulating layer 34 flush with the inner surface of the insulating substrate 12 is formed. . Further, a third groove 32c extending along the second groove 32b and having a projection for forming an element electrode is formed in each interlayer insulating layer 34 by the same sandblasting method as described above. Each third groove 32c has a depth of about 0.1 m
m and a width of 0.06 mm. Then, by forming such a third groove 32c, the second groove 32b is formed.
Inside is an interlayer insulating layer 3 having a thickness of 0.2 mm along its inner surface.
4 remains.

After the above-described third groove 32c is formed, a conductive paste is filled into the third groove 32c and the projection for forming an element electrode by screen printing or the like, and the paste is baked at about 480 ° C. The X-directional wiring 22 and the element electrode 30 located in the area 32c are formed. Ag paste ink or the like is used as the conductive paste, and the width is about 0.06 m.
The X-direction wirings 22 of m were formed.

The X-direction wiring 22 and the device electrode 30
In addition to Ag, Pd, Au, RuO ₂ , Pd−
A printing paste composed of a metal or metal oxide such as Ag, frit glass, a polymer as a binder, a suitable solvent, and the like can be used. Further, the X-directional wiring 22 is not limited to the conductive paste, and may be formed by electroless plating or the like.

Through the above steps, the Y-directional wiring 20, the X-directional wiring 22, and the element electrodes 2 are formed on the inner surface of the back substrate 12.
8, 30 are formed. Both the Y-directional wiring 20 and the X-directional wiring 22 are provided in the first and third grooves 32a and 32c formed on the inner surface of the rear substrate 12, and are substantially flush with the outer surface of the rear substrate. .

Next, as shown in FIGS. 2 and 3, a thin film composed of fine particles is applied on the inner surface of the back substrate 12 to form a conductive thin film 27 connected to the device electrodes 28 and 30, respectively. The emission element 18 is configured. With the above configuration, an electron source substrate is formed.

Thereafter, the support frame 14 is fixed to the peripheral edge of the rear substrate 12 using an insulating adhesive such as frit glass, and a spacer (not shown) is formed on the rear substrate 12. Further, the front substrate 10 on which the phosphor screen 16 and the metal back 17 are formed in advance is placed on the support frame 14. At this time, frit glass is applied to a joint between the support frame 14 and the front substrate 10 and fixed by a method such as baking, and an envelope 15 having the front substrate 10, the support frame 14, the spacer, and the rear substrate 12 is provided. Is configured. The envelope 15 formed as described above is subjected to an energization process or an aging process as necessary.

According to the image display device configured as described above, the Y-directional wiring 20 and the X-directional wiring 22 are formed by the first groove 32 a and the second groove 3 formed on the inner surface of the back substrate 12.
By providing it in the second groove 2b (third groove 32c), it is possible to form a thick film by using a conductive paste or a plating film, and as a result, it is possible to reduce the wiring resistance.

In this embodiment, the resistance of the Y-direction wiring 20 made of silver paste and having a length of 800 mm, a width of 0.35 mm, and a thickness of 0.5 mm is about 0.2 Ω, and the resistance of the wiring is sufficiently reduced. You can do it. In addition, the length of the silver paste is 500 mm, the width is 0.06 mm, and the thickness is 0.3 mm.
The resistance of the 5 mm X-direction wiring 22 is about 42 Ω, and the resistance of the wiring can be sufficiently reduced. When the resistance value of the wiring decreases, a large number of electron-emitting devices 18
Are operated on the same wiring, the voltage drop due to the current flowing through each of the electron-emitting devices arranged on the wiring is reduced. This reduces the voltage drop between the electron-emitting devices 18,
In addition, it is possible to reduce the voltage drop at both ends of the wiring, and each of the electron-emitting devices can operate in a state close to the same driving voltage. Therefore, it is possible to greatly reduce the variation of the operating voltage between the electron-emitting devices and the difference in light emission luminance between the horizontal line and the vertical line due to the voltage drop between the electron-emitting devices, so-called crosstalk, which has been a major problem in the past. . As a result, even in a large-screen image display device, high-quality image display without luminance unevenness or the like can be performed.

In addition, wiring is formed in the first and second grooves 32a, 3a.
By providing the wiring inside 2b, even if the wiring is thickened, it is difficult to peel off the wiring from the rear substrate 12, and the reliability can be improved. Further, by providing the Y-direction wiring 20 and the X-direction wiring 22 in the grooves formed on the rear substrate 12, respectively, even when the Y-direction wiring 20 and the X-direction wiring 22 are made thicker to reduce the wiring resistance, Can be prevented from protruding greatly from the inner surface of the rear substrate, and can be provided flush with the inner surface of the rear substrate. for that reason,
The trajectory of the electrons emitted from the electron-emitting device 18 is not affected by the electric field generated from the Y-directional wiring 20 and the X-directional wiring 22, and the image quality can be further improved.

The inner surface of the back substrate 12 on which the electron-emitting devices 18 are provided has a high flatness.
After forming the directional wiring 20 and the X-directional wiring 22, it is not necessary to grind the inner surface of the back substrate, and the electron-emitting device can be formed immediately. This makes it possible to simplify the manufacturing process.

Then, the wiring resistance is reduced as described above,
In addition, by using an electron source substrate that does not affect the electron-emitting device due to the wiring, the problem of non-uniformity of the screen can be solved, and an image display device capable of high-quality display can be obtained.

Using the metal back 17 of the image display device manufactured by the method shown in the present embodiment as an anode electrode, an electron accelerating voltage of 5 kV is applied, and the Y, X direction wiring 2
When a predetermined voltage is applied to the electron-emitting device 18 from the device electrodes 28 and 30 through 0 and 22, electrons are emitted,
A display with uniform brightness over the entire screen was obtained.

In addition, since the wiring resistance is reduced, even when a voltage is applied to each wiring at the same time in the aging process performed in the manufacturing process, the applied voltage to each element does not become non-uniform, and uniform characteristics are obtained. Electron-emitting device can be obtained,
It is possible to provide an inexpensive image display device by improving the manufacturing efficiency and reducing the manufacturing cost.

The present invention is not limited to the above-described embodiment, but can be variously modified within the scope of the present invention. For example, in the present invention, the electron emission device is not limited to the surface conduction type, but may be a field emission type or MIM type electron emission device,
Alternatively, a semiconductor electron source or the like can be applied. In the above-described embodiment, the device electrode of the electron-emitting device may be formed separately from the Y-direction wiring and the X-direction wiring on the rear substrate after these wirings are formed without being formed integrally with the Y-direction wiring and the X-direction wiring. good.

Further, the configuration may be such that the Y-direction wiring and the X-direction wiring are provided in reverse. That is, an X-directional wiring may be formed in the first groove, and a Y-directional wiring may be provided in the second groove extending across the first groove and the X-directional wiring via an interlayer insulating film.

[0053]

As described above in detail, according to the present invention, by reducing the wiring resistance, the problem of the non-uniformity of the screen caused by the wiring resistance can be solved, and an electronic device capable of high quality display can be realized. A source substrate, a method for manufacturing the same, and an image display device including the electron source substrate can be provided.

[Brief description of the drawings]

FIG. 1 is an exemplary perspective view showing an image display apparatus according to an embodiment of the present invention, with a part cut away;

FIG. 2 is an enlarged perspective view showing a part of an electron source substrate of the image display device.

FIG. 3 is a sectional view taken along line AA of FIG. 2;

FIG. 4 is a flowchart schematically showing a sandblasting method for forming a groove in the back substrate in the manufacturing process of the electron source substrate.

FIG. 5 is a perspective view showing a state in which Y-directional wiring is formed on the back substrate.

FIG. 6 shows a second example after Y-directional wiring is formed on the rear substrate.
FIG. 4 is a perspective view showing a state in which a groove is formed.

FIG. 7 is a perspective view showing a state in which a third groove is formed in an interlayer insulating layer provided in the second groove of the back substrate.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Front board 12 ... Back board 14 ... Support frame 15 ... Enclosure 16 ... Phosphor screen 17 ... Metal back 18 ... Electron emission element 20 ... Y direction wiring 22 ... X direction wiring 24a, 24b ... Conducting part 26 ... Insulation Substrates 28, 30 ... Device electrode 32 ... Groove 32a ... First groove 32b ... Second groove 32c ... Third groove 34 ... Interlayer insulating layer

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Shigeo Takenaka 1-1-1, Shibaura, Minato-ku, Tokyo Inside Toshiba Corporation Head Office (72) Inventor Kumio Fukuda 1-9-9 Hara-cho, Fukaya-shi, Saitama Inside the Toshiba Fukaya Plant (72) Inventor Takashi Nishimura 1-9-2 Hara-cho, Fukaya City, Saitama Prefecture Inside the Toshiba Fukaya Plant F-term (reference) 5C031 DD17 5C036 EE02 EE03 EE19 EF01 EF06 EF08 EG02 EG11 EH04

Claims (15)

[Claims] An insulating substrate having first and second main surfaces facing each other; a plurality of first wirings respectively provided in a plurality of first grooves formed in the first main surface of the insulating substrate; A plurality of second wirings respectively provided via an insulating layer in a plurality of second grooves formed on a first main surface of the insulating substrate and extending across the first wirings; The first and second wirings are provided on the first main surface of the insulating substrate in the vicinity of the intersection with the second wiring, respectively.
An electron source substrate, comprising: a plurality of electron-emitting devices connected to wiring. 2. The electron source substrate according to claim 1, wherein each of the first wirings is formed by firing a conductive paste filled in the first groove. 3. The electron source substrate according to claim 1, wherein each of said first wirings is formed by a plating film or a deposition film formed in said first groove. 4. The semiconductor device according to claim 1, wherein the second wiring is formed by firing a conductive paste filled in the second groove via the insulating layer. 2. The electron source substrate according to claim 1. 5. The semiconductor device according to claim 1, wherein each of the second wirings is formed by a plating film or a deposition film formed in the second groove via the insulating layer. 2. The electron source substrate according to claim 1. 6. The semiconductor device according to claim 1, wherein said first and second wirings are exposed in substantially the same plane as a first main surface of said insulating substrate. Electron source substrate. 7. The electron source substrate according to claim 1, wherein each of the second grooves is formed shallower than the first grooves. 8. A plurality of elongated first grooves are formed in a first main surface of an insulating substrate having first and second main surfaces opposed to each other, and a conductive material is filled in the first grooves to form a plurality of first grooves. Forming one wiring, forming a plurality of elongated second grooves intersecting the first groove and the first wiring on the first main surface of the insulating substrate; filling each of the second grooves with an insulating material; Forming a third groove extending along the second groove in the insulating layer formed in each of the second grooves, and filling the third groove with a conductive material. A plurality of electron-emitting devices are provided on the first main surface of the insulating substrate in the vicinity of the intersection of the first and second wires, and each electron-emitting device is provided with the first and second electron-emitting devices. A method for manufacturing an electron source substrate, comprising connecting to two wirings. 9. The method according to claim 8, wherein the first wiring is formed by filling and firing a conductive paste in the first groove. 10. The method according to claim 8, wherein the second wiring is formed by filling and firing a conductive paste in the third groove. 11. The method according to claim 8, wherein the first wiring is formed by plating or depositing a conductive material in the first groove. 12. The method according to claim 8, wherein a conductive material is plated or vapor-deposited in the third groove to form the second wiring. 13. The method of manufacturing an electron source substrate according to claim 8, wherein the first, second, and third grooves are respectively formed by sandblasting. 14. An image display device comprising the electron source substrate according to claim 1. 15. An electron source substrate according to any one of claims 1 to 7, disposed opposite to said electron source substrate at a predetermined interval, and excited by said electron emitting element to emit visible light. And a counter substrate having a light emitting surface.