JP2002202449A - Method for manufacturing objective optical system, inspection device and method for manufacturing the same, observation device, exposure device, and method for manufacturing micro device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an objective optical system suitable for use primary in manufacturing an objective optical system having aberration corrected to the utmost, and to provide an inspection device and a method for manufacturing the same, the device having high detection accuracy in which aberration caused in the device itself does not influence substantially the measured result of the aberration of an optical system to be tested. SOLUTION: The method for manufacturing the objective optical system includes a process S10 in which the objective optical system is assembled, a process S12 in which the wave front aberration of the assembled objective optical system is measured, a process S14 in which an astigmatic component, a spherical aberration component, and a coma aberration component are extracted from a measured wave aberration, a process S16 in which the astigmatic component is corrected, a process S22 in which the spherical aberration component is corrected after the process S16, and a process S28 in which the coma aberration component is corrected after the process S22.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing an objective optical system, an inspection apparatus and a method for manufacturing the same, an observation apparatus, an exposure apparatus, and a method for manufacturing a micro device. The present invention relates to an inspection apparatus and a manufacturing method thereof suitable for use in manufacturing a micro device, an observation apparatus, an exposure apparatus, and a micro device manufacturing method.

[0002]

2. Description of the Related Art Semiconductor devices, imaging devices, liquid crystal display devices,
Alternatively, in the manufacture of a micro device such as a thin film magnetic head, an image of a pattern formed on a mask or a reticle (hereinafter, referred to as a mask when these are collectively referred to) is referred to as a wafer or a glass plate (hereinafter, collectively referred to as a mask). In this case, an exposure apparatus for transferring the image onto the substrate is used.
For example, when manufacturing a semiconductor device, a so-called step-and-repeat type exposure apparatus (hereinafter, referred to as a stepper) is often used. This stepper is
A wafer coated with a photosensitive agent such as a photoresist is placed on a two-dimensionally movable stage, and the wafer is stepped by this stage, and a reduced image of the mask pattern image is displayed on the wafer. This is a device that repeats the operation of sequentially exposing each shot area.

Generally, a micro device is manufactured by forming a plurality of layers of patterns on a substrate, and therefore, it is necessary to precisely match the position of the substrate with the position of the image of the pattern. In recent years, with the miniaturization of patterns formed on a substrate, high alignment accuracy between a mask and a substrate has been required. For example, taking the manufacture of a semiconductor device as an example, a current CPU (central processing unit) is manufactured according to a process rule of about 0.18 μm, but will be 0.1 to 0.13 μm in the future.
Manufacturing is being performed with a process rule of about m, and it is expected that the device will be manufactured with a finer process rule in the future. The positions of the substrate and the mask are measured by observing the marks formed on each with a position measurement device, but in order to improve the measurement accuracy of the position information of the substrate and the mask, it is necessary to increase the measurement accuracy of the position measurement device There is.

There are various types of position measuring devices that measure position information using position measuring marks formed on a mask or a substrate, from the viewpoints of measurement principles and observation methods. It is an observation method of the Axis method, and often includes a position measurement device using the measurement principle of the FIA method. Here, in the off-axis observation method, the measurement field of view of the position measurement device is set outside the projection area of the projection optical system, and the mark on the substrate is directly observed. The measurement principle of the FIA method is as follows. The mark is illuminated using a light source having a wide wavelength band such as a halogen lamp, and the image of the resulting mark is converted into an image signal. It measures information. F
The measurement principle of the IA method is used because a light source having a wide wavelength bandwidth is used, so that the influence of thin film interference in a photosensitive agent applied on a wafer is reduced, which is preferable in improving measurement accuracy. is there.

Further, the stepper performs relative positioning between the mask and the substrate based on the measurement result of the position measuring device, and then transfers the image of the pattern formed on the mask via the projection optical system. Transfer onto a substrate. Here, in order to faithfully project the image of the pattern onto each shot area of the substrate with high resolution, the projection optical system provided in the exposure apparatus is designed to have good optical performance in which various aberrations are sufficiently suppressed. I have. However, the projection optical system of an actually manufactured exposure apparatus has aberrations due to manufacturing errors in addition to aberrations in design. Therefore, conventionally, various aberration measuring apparatuses (inspection apparatuses) for measuring aberration remaining in a test optical system such as a projection optical system mounted on an exposure apparatus have been devised.

[0006]

However, if various aberrations caused by various factors remain in the optical system provided in the above-mentioned position measuring device, the position measuring accuracy deteriorates. It is necessary to adjust the residual aberration to such an extent that the measurement accuracy is not affected. In particular, since the numerical aperture of the objective optical system provided in the optical system of the position measuring device is set to be high, it is possible to sufficiently correct the aberration generated in the objective optical system when manufacturing the position measuring device. It is extremely important in maintaining the performance of the.

In an aberration measuring device for measuring the aberration remaining in the projection optical system, if the aberration measuring device itself has an aberration, the aberration remaining in the projection optical system is replaced by the aberration occurring in the aberration measuring device itself. Since the added aberration is measured as the aberration remaining in the projection optical system, a measurement error occurs. Since the projection optical system is designed so as to minimize the occurrence of aberration, it is considered that residual aberration is extremely small. Therefore, when manufacturing an aberration measurement device that measures the residual aberration of the projection optical system with high accuracy, it is necessary to correct the aberration generated by the aberration measurement device itself so as to be sufficiently smaller than the residual aberration of the projection optical system. is there. Also in an aberration measuring device for measuring the aberration remaining in the projection optical system, it is important to sufficiently correct the residual aberration in the objective optical system, as in the above-described position measuring device.

The present invention has been made in view of the above circumstances, and a method for manufacturing an objective optical system suitable for manufacturing an objective optical system in which aberrations are corrected as much as possible, and aberrations generated by the inspection apparatus itself, are not affected. Inspection apparatus having high detection accuracy without substantially affecting the aberration measurement result of the optical analysis system and its manufacturing method, including an objective optical system manufactured by the above manufacturing method,
An object of the present invention is to provide an observation apparatus having high detection accuracy, an exposure apparatus including the inspection apparatus and the observation apparatus, and a method for manufacturing a micro device using the exposure apparatus.

[0009]

In order to solve the above-mentioned problems, a method of manufacturing an objective optical system according to the present invention comprises an objective optical system (5).
4, 42, 43, 44) (S1)
0, S40), a measurement step (S12, S42) for measuring the wavefront aberration of the assembled objective optical system, and a first correction step (S16, S50) for correcting the ass component of the aberration of the objective optical system. ), A second correction step (S22, S56) executed after the first correction step to correct a spherical aberration component of aberrations of the objective optical system, and
A third correction step (S28, S28) executed after the correction step to correct the coma aberration component of the aberration of the objective optical system.
62). According to the present invention, upon manufacturing the objective optical system, the wavefront aberration remaining in the objective optical system is determined, and the wavefront aberration remaining in the objective optical system in the order of the astigmatism component, the spherical aberration component, and the coma aberration component is determined for each component. Has been corrected. Here, the astigmatism component, the spherical aberration component, and the coma aberration component are corrected in this order because the component adjustment performed later does not significantly affect the deterioration of the component adjusted first. Therefore, according to the present invention, it is possible to efficiently manufacture an objective optical system in which aberration is corrected as much as possible. Further, in the method for manufacturing an objective optical system according to the present invention, between the first correction step (S50) and the second correction step (S56),
Further, the method includes a fourth step (S56) of correcting a focus component of aberration generated in the objective optical system (42, 43, 44). In the method for manufacturing an objective optical system according to the present invention, after each of the first correction step (S16, S50) to the fourth correction step (S56), it is determined whether or not the corrected component is equal to or less than a predetermined value. Judgment process (S20, S2
6, S32, S54, S60, S66). In the method for manufacturing an objective optical system according to the present invention, the measuring step (S42) may be performed after the measuring step (S42).
The objective optical system (4) based on the measurement result of (42).
Focus component adjusting step of adjusting the focus component of the aberration generated in (2, 43, 44) to a predetermined value or less (S48).
It is characterized by having. In the method for manufacturing an objective optical system according to the present invention, the correcting step (S16, S22,
28, S50, S56, S62), a judging step (S36, S6) for judging whether or not the aberration remaining in the objective optical system (54, 42, 43, 44) is not more than a predetermined value.
8). Further, the method of manufacturing an objective optical system according to the present invention includes the objective optical system (54, 4).
When the wavefront aberration is expressed by a Zernike polynomial, the ass component of the aberration of (2, 43, 44) is corrected based on the expansion coefficients including the expansion coefficients of the fifth and sixth terms, and the objective optical system (54) is corrected. , 42, 43, 44), when the wavefront aberration is represented by a Zernike polynomial, the spherical aberration component is corrected based on the expansion coefficient including the expansion coefficient of the ninth term, and the objective optical system (54, 42) is corrected. , 43, and 44), when the wavefront aberration is represented by a Zernike polynomial, the coma aberration component is corrected based on expansion coefficients including expansion coefficients of the seventh and eighth terms, and the objective optical system (54) is corrected. , 42, 43,
44) is characterized in that the focus component of the aberration is corrected based on the expansion coefficient of the fourth term when the wavefront aberration is represented by a Zernike polynomial. Here, basic matters about the expression by the Zernike polynomial will be described.
In the expression of Zernike polynomial, polar coordinates are used as a coordinate system, and Zernike cylindrical functions are used as an orthogonal function system.
When expressing the wavefront aberration using the Zernike polynomial, first, polar coordinates are determined on the exit pupil plane, and the obtained wavefront aberration W is expressed as W (ρ, θ). Here, ρ is a normalized pupil half-pupil in which the radius of the exit pupil is normalized to 1, and θ is a radial angle in polar coordinates. Next, the wavefront aberration W (ρ, θ)
Using Zernike's cylindrical function system Zn (ρ, θ),
The expansion is performed as shown in the following equation (1). W (ρ, θ) = ΣCnZn (ρ, θ) = C1 · Z1 (ρ, θ) + C2 · Z2 (ρ, θ) ··· + Cn · Zn (ρ, θ) (1) where Cn Is the expansion coefficient. Hereinafter, among the Zernike cylindrical function systems Zn (ρ, θ), the cylindrical function systems Z1 to Z36 according to the first to thirty-sixth terms are as follows. n: Zn (ρ, θ) 1: 1 2: ρcosθ 3: ρsinθ 4: 2ρ 2 -1 5: ρ 2 cos2θ 6: ρ 2 sin2θ 7: (3ρ 2 -2) ρcosθ 8: (3ρ 2 -2) ^{ρsinθ 9: 6ρ 4 -6ρ 2 +1} 10: ρ 3 cos3θ 11: ρ 3 sin3θ 12: (4ρ 2 -3) ρ 2 cos2θ 13: (4ρ 2 -3) ρ 2 sin2θ 14: (10ρ 4 -12ρ 2 +3 ^{) ρcosθ 15: (10ρ 4 -12ρ} 2 +3) ρsinθ 16: 20ρ 6 -30ρ 4 + 12ρ 2 -1 17: ρ 4 cos4θ 18: ρ 4 sin4θ 19: (5ρ 2 -4) ρ 3 cos3θ 20: (5ρ 2 ^{-4) ρ 3 sin3θ 21: (} 15ρ 4 -20ρ 2 +6) ρ 2 cos2θ 22: (15ρ 4 -20ρ 2 +6) ρ 2 sin2θ 23: (35ρ 6 -60ρ 4 + 30ρ 2 -4) ρcosθ 24: (35ρ ^{6 -60ρ 4 + 30ρ 2 -4)} ρsinθ 25: 70ρ 8 -140ρ 6 + 90ρ 4 -20ρ 2 +1 26: ρ 5 cos5θ 27: ρ 5 sin5θ 28: (6ρ 2 -5) ρ 4 cos4θ 29: (6ρ 2 - 5) ρ ⁴ sin4θ 30: (21ρ ⁴ −30 ρ ² +10) ρ ³ cos 3θ 31: (21 ρ ⁴ −30 ρ ² +10) ρ ³ sin 3θ 32: (56 ρ ⁶ −104 ρ ⁴ +60 ρ ² −10) ρ ² cos ²
θ 33: (56ρ ⁶ −104ρ ⁴ + 60ρ ² −10) ρ ² sin2
^{θ 34: (126ρ 8 -280ρ 6} + 210ρ 4 -60ρ 2 +
5) ρ cos θ 35: (126 ρ ⁸ -280 ρ ⁶ +210 ρ ⁴ −60 ρ ² +
5) ρ sin θ 36: 252 ρ ¹⁰ −630 ρ ⁸ +560 ρ ⁶ −210 ρ ⁴ +
30ρ ² -1, where the first term in accordance with the expansion coefficients C1 is a constant term.
The second and third terms relating to the expansion coefficients C2 and C3 are tilt components (X-axis direction and Y-axis direction). Furthermore,
The fourth term relating to the expansion coefficient C4 is a power component (focus component). The fifth and sixth terms relating to the expansion coefficients C5 and C6 are ass components, the seventh and eighth terms relating to the expansion coefficients C7 and C8 are coma components, and the ninth term relating to the expansion coefficient C9 is This is a spherical aberration component. Next, a wavefront aberration component including the fifth and sixth terms relating to the expansion coefficients C5 and C6, a wavefront aberration component including the ninth term relating to the expansion coefficient C9, the seventh term relating to the expansion coefficients C7 and C8, and The component of the wavefront aberration including the expansion coefficient of the eighth term will be described. First, the wavefront aberration W is classified into a rotationally symmetric component, an odd symmetric component, and an even symmetric component. Here, the rotationally symmetric component is a term that does not include θ, that is, a rotationally symmetric component in which the value at a certain coordinate is equal to the value at a coordinate obtained by rotating the coordinate by an arbitrary angle around the center of the pupil. It is. The odd-symmetric component is a term including a trigonometric function such as sin θ (or cos θ) or sin 3θ (or cos 3θ) which is an odd multiple of the radial angle θ, that is, a value at a certain coordinate and the coordinate at the coordinate. Is an odd-numbered symmetric component having the same value at coordinates rotated by an odd number of 360 ° about the center of. Further, the even symmetric components are sin2θ (or cos2θ), sin4θ
(Or cos4θ), such as a term containing a trigonometric function that is an even multiple of the radial angle θ, that is, a value at a certain coordinate and the coordinate is rotated by an even number of 360 ° around the center of the pupil. It is an even-numbered symmetric component whose value at the coordinates is equal. Further, the first to fourth terms related to the expansion coefficients C1 to C4 are not included in all components of the wavefront aberration W as error components generated at the time of measurement by the aberration measurement device. In this case, a rotationally symmetric component Wrot, an odd-numbered symmetric component Wodd, and an even-numbered symmetric component Wevn of the wavefront aberration W are expressed by the following equations (2) to (4), respectively. Hereinafter, for simplification of expression, the n-th term is represented by the expansion coefficient Cn of the n-th term in principle.
That is, in the following expressions (2) to (4) and expressions of the respective components, Cn means Cn · Zn. Wrot (ρ, θ) = C9 + C16 + C25 + C36 ... (2) Wodd (ρ, θ) = C7 + C8 + C10 + C11 + C14 + C15 + C19 + C20 + C23 + C24 + C26 + C27 + C30 + C31 + C34 + C35 ... (3) Wevn (ρ, θ) = C5 + C6 + C12 + C13 + C17 + C18 + C21 + C22 + C28 + C29 + C32 + C33 ... (4) Thus, as discussed in the embodiments described below Each component,
That is, all components W, rotationally symmetric component Wrot, rotationally symmetric higher-order component Wroth, non-rotationally symmetric component Wrnd, non-rotationally symmetric component Wrndmas after ass correction, non-rotationally symmetric higher-order component Wrn after ass correction
dmash, longitudinal aberration component W length, longitudinal aberration higher order component W height, lateral aberration component W horizontal, lateral aberration higher order component W width, astigmatism correction Wmas,
The astigmatism, the low-order spherical aberration correction Wmassa, the asth, the low-order coma aberration correction Wmascoma, and the high-order aberration component Wmassacoma are expressed as follows. All components: W = Wrot + Wodd + Wevn Rotationally symmetric component: Wrot (see equation (2)) Rotationally symmetric higher-order component (rotationally symmetric component second-order fourth-order residual): Wr
oth = Wrot-C9 Non-rotationally symmetric component: Wrnd = Wodd + Wevn Non-rotationally symmetric component after astigmatism correction: Wrndmas = Wrnd-C5
−C6 Non-rotationally symmetric higher-order component after astigmatism correction: Wrndmash = Wrndma
s-C7-C8 Longitudinal aberration component: W longitudinal = Wrot + Wevn-C5-C6 Longitudinal aberration higher-order component: W longitudinal height = W longitudinal-C9 Lateral aberration component: W lateral = Wodd (see equation (3)) Next component: W lateral height = W lateral-C7-C8 Astigmatism correction: Wmas = W-C5-C6 As and low-order spherical aberration correction: Wmassa = W-C5-C6
-C9 Astigmatism and low-order coma correction: Wmascoma = W-C5-C
6-C7-C8 Higher-order aberration component: Wmassacoma = W-C5-C6-C7
-C8-C9 Note that all components W are components after the tilt component and the power component have been corrected from the wavefront aberration. The rotationally symmetric higher-order component Wroth is a rotationally symmetric component second-order fourth-order residual obtained by removing the quadratic-quadratic curve component from the rotationally symmetric component Wrot. Further, the as rotationally corrected non-rotationally symmetric component Wrndmas is a non-rotationally symmetric component obtained by correcting the astigmatism component from all the components W. The ass correction Wmas is a component obtained by correcting the ass component from all the components W. In addition, ass and low-order spherical aberration correction Wmassa
Is a component obtained by correcting the astigmatism component and the low-order spherical aberration component from all the components W. The astigmatism and low-order coma aberration correction Wmascoma are components obtained by correcting the astigmatism component and the low-order coma aberration component from all the components W. Here, the ass component is a difference between a wavefront aberration component proportional to the square of the distance from the optical axis on a certain meridional surface and a wavefront aberration component proportional to the square of the distance from the optical axis on a surface orthogonal to the meridional surface. Is the largest component. Also, the root mean square (RMS value) of each wavefront aberration component is represented by adding R before RWrot, and the RMS value of each term of the Zernike polynomial is similarly calculated by R
When R is added before Cn, the following relationship is established. Rotationally symmetric component: (RWrot) ² = (RC9) ² + (RC1
^{6) 2 + (RC25) 2} + (RC36) 2 odd symmetric ^{element: (RWodd) 2 = (RC7} ) 2 + (RC8)
² + (RC10) ² + (RC11) ² + (RC14) ² +
^{(RC15) 2 + (RC19)} 2 + (RC20) 2 + (RC
23) ² + (RC24) ² + (RC26) ² + (RC2
7) ² + (RC30) ² + (RC31) ² + (RC34) ²
+ (RC35) ² Even number symmetric component: (RWevn) ² = (RC5) ² + (RC6)
^{2 + (RC12) 2 + (} RC13) 2 + (RC17) 2 +
(RC18) ² + (RC21) ² + (RC22) ² + (RC
28) ² + (RC29) ² + (RC32) ² + (RC3
3) ² total components: (RW) ² = (RWrot) ² + (RWodd) ² +
(RWevn) ² rotationally symmetric components: (RWrot) ² rotationally symmetric components Higher order (second-order fourth-order residual): (R Wroth) ² =
(RWrot) ^2- (RC9) ² Non-rotationally symmetric component: (RWrnd) ² = (RWodd) ² + (R
Wevn) Non-rotationally symmetric component after ² ass correction: (RWrndmas) ² = (RWrn
d) ^2- (RC5) ^2- (RC6) ² astigmatism-corrected non-rotationally symmetric higher-order component: (RWrndmash) ² =
^{(RWrndmas) 2 - (RC7)} 2 - (RC8) 2 longitudinal aberration component: (RW ^{vertical) 2 = (RWrot) 2 +} (RWevn) 2
− (RC5) ² − (RC6) ² Longitudinal aberration high-order component: (RW vertical height) ² = (RW vertical) ² − (R
C9) ² lateral aberration components: (RW lateral) ² = (R Wodd) ² lateral aberration higher order components: (RW lateral height) ² = (RW lateral) ² − (R
C7) ^2- (RC8) ² ass correction: (RWmas) ² = (RW) ^2- (RC5) ^2-
(RC6) ² ass and low order spherical aberration correction: (RWmassa) ² = (RW) ²
− (RC5) ² − (RC6) ² − (RC9) ^{2 As} and low-order coma correction: (RWmascoma) ² = (RW) ²
-(RC5) ^2- (RC6) ^2- (RC7) ^2- (RC8)
² Higher-order aberration components: (RWmassacoma) ² = (RW) ² − (RC
5) ^2- (RC6) ^2- (RC7) ^2- (RC8) ^2- (R
C9) ² Here, the correction based on the expansion coefficients including the expansion coefficients of the fifth and sixth terms means (a) all components W of wavefront aberration;
(B) non-rotationally symmetric component Wrnd of wavefront aberration; or (c)
Correction of the astigmatic component of the objective optical system using the total component W of the wavefront aberration and the astigmatism correction Wmas of the wavefront aberration. Further, the correction based on the expansion coefficient including the expansion coefficient of the ninth term includes (d) a rotationally symmetric component Wrot; (e) a longitudinal aberration component W longitudinal; or (f) astigmatism correction Wmas and ass and lower order spherical aberration. Correction Wmassa; to correct the spherical aberration component of the objective optical system. The correction based on the expansion coefficients including the expansion coefficients of the seventh and eighth terms is (g)
Correcting the coma aberration component of the objective optical system by using the non-rotationally symmetric component Wrndmas after the astigmatism correction; (h) the lateral aberration component W; Point. In order to solve the above problems,
The method for manufacturing an inspection apparatus according to the present invention is a method for manufacturing an inspection apparatus for measuring the wavefront aberration of the optical system to be tested by receiving light from the optical system to be tested (PL) via an objective optical system. A wavefront splitting element (45) for splitting the light passing through the objective optical system (42, 43, 44) into a wavefront; and a photoelectric conversion element for photoelectrically detecting the light split by the wavefront splitting element (45). Arranging the photoelectric detection unit (46) at a predetermined position (S40);
4) obtaining a detection result from the photoelectric detection unit (46) by supplying light to the photoelectric detection unit (46), and measuring a wavefront aberration generated in the inspection apparatus based on the detection result (S4).
2) and a correction step (S48, S50, S5) of correcting the aberration remaining in the inspection device for each component of the wavefront aberration based on the wavefront aberration measured in the measurement step (S42).
6, S62). According to the present invention, the aberration remaining in the inspection device itself for measuring the wavefront aberration of the optical system to be measured is measured by the inspection device itself, and the wavefront aberration remaining in the inspection device is corrected for each component of the wavefront aberration. Since the inspection apparatus is manufactured, it is possible to manufacture an inspection apparatus in which residual aberration is extremely small, and as a result, it has a high detection accuracy without substantially affecting the aberration measurement result of the optical system to be inspected. An inspection device can be manufactured. Further, in the method for manufacturing an inspection apparatus according to the present invention, the objective optical system (42, 43, 44) includes a calibration opening (41a).
Is formed, and in the measurement step (S42), a detection result is obtained based on light passing through the calibration opening (41a).
In the method for manufacturing an inspection apparatus according to the present invention, the correcting step (S48, S50, S56, S62) may include a first correcting step of correcting an ass component of aberration generated in the objective optical system (42, 43, 44). (S50) and the objective optical system (4
(2, 43, 44), a second correction step (S56) for correcting the spherical aberration component of the aberration generated in the objective optical system (42, 43).
And a third correction step (S62) of correcting the coma aberration component of the aberration generated in the steps 43 and 44).
According to the present invention, in correcting the wavefront aberration remaining in the objective optical system, the component adjustment performed later does not significantly affect the deterioration of the component that has been previously adjusted, so that the ass component,
Since the wavefront aberration remaining in the objective optical system is corrected for each component in the order of the spherical aberration component and the coma aberration component, an inspection apparatus in which the aberration is corrected as much as possible can be manufactured efficiently.
In the method of manufacturing an inspection device according to the present invention, the second correction step (S56) is performed after the first correction step (S50), and is performed between the first and second correction steps. It is characterized by further including a fourth correction step (S56) of correcting a focus component of aberration generated in the objective optical system (42, 43, 44). Further, in the method of manufacturing an inspection apparatus according to the present invention, after each of the first correction step (S50) to the third correction step (S62), it is determined whether the corrected component is equal to or less than a predetermined value. (S54, S60, S6
6). Further, in the method of manufacturing an inspection apparatus according to the present invention, after the measurement step (S42), the focus of aberration generated in the objective optical system (42, 43, 44) based on the measurement result of the measurement step (S42). It is characterized by having a focus component adjusting step (S48) of adjusting the component to a predetermined value or less. Further, in the manufacturing method of the inspection apparatus according to the present invention, the correcting step (S50,
The objective optical system (42, 43,
44) The method further includes a determining step (S68) of determining whether the remaining aberration is equal to or less than a predetermined value. Further, in the manufacturing method of the inspection apparatus according to the present invention, the assembling component of the aberration of the objective optical system (42, 43, 44) expands the fifth and sixth terms when the wavefront aberration is represented by a Zernike polynomial. The spherical aberration component of the aberration of the objective optical system (42, 43, 44) is corrected based on the expansion coefficient of the ninth term when the wavefront aberration is represented by a Zernike polynomial; Objective optical system (42, 4
The coma aberration components of the aberrations of (3, 44) are corrected based on the expansion coefficients of the seventh and eighth terms when the wavefront aberration is represented by Zernike polynomials, and the objective optical system (42, 4) is corrected.
3, 44), wherein the focus component of the aberration is corrected based on the expansion coefficient of the fourth term when the wavefront aberration is represented by a Zernike polynomial. In order to solve the above-mentioned problems, an inspection apparatus of the present invention provides an inspection optical system (P
L) An inspection apparatus (40) for measuring the wavefront aberration, wherein the illumination units (1 to 11) illuminate the openings (tr1, tr2) positioned on the object plane of the optical system to be tested (40). ) And an objective optical system manufactured by the above-described method for manufacturing an objective optical system for condensing light from an image of the openings (tr1, tr2) formed on an image plane of the test optical system (PL). System (42, 43, 44), a wavefront splitting element (45) that splits the light passing through the objective optical system (42, 43, 44) into a plurality of spot images by dividing the light, and the wavefront splitting element ( 45) a photoelectric detection unit (46) for photoelectrically detecting the plurality of spot images formed through (45). According to these inventions,
Since the objective optical system in which the aberration is corrected as much as possible is provided, the residual aberration of the inspection apparatus itself is small, and as a result, the residual aberration of the test optical system can be detected with high detection accuracy. In order to solve the above-mentioned problems, an observation apparatus according to the present invention provides an imaging optical system (36, 53 to 57,
59 to 61), and the imaging optical system (36, 53 to 5).
7, 59-61) is observed. According to the present invention, since the objective optical system in which the aberration is corrected as much as possible is provided, the residual aberration of the observation apparatus itself is small, and as a result, the object image can be observed with high optical performance. In order to solve the above problems, an exposure apparatus of the present invention is an exposure apparatus that transfers an image of a pattern (DP) formed on a mask (R) onto a substrate (W) via a projection optical system (PL). The inspection apparatus (40) manufactured by the above-described method for manufacturing an inspection apparatus or the inspection apparatus (40);
0), wherein the projection optical system (PL) is used as the test optical system to measure the wavefront aberration. In order to solve the above-mentioned problem, an exposure apparatus of the present invention is an exposure apparatus that transfers a predetermined pattern (DP) onto a substrate (W), wherein the mark (WM) formed on the substrate (W) is The observation device (35) for observing, position information calculation means (20) for obtaining position information of the mark based on the observation result of the observation device (35), and a position information calculation unit And positioning means (15, 18, 20) for positioning the substrate. In order to solve the above-mentioned problems, a method for manufacturing a microdevice of the present invention includes an exposure step (S96) of exposing the pattern (DP) onto the substrate (W) using the above-described exposure apparatus; A developing step (S97) of developing the exposed substrate (W).

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing an objective optical system, an inspection apparatus and a method for manufacturing the same, an observation apparatus, an exposure apparatus, and a method for manufacturing a micro device according to an embodiment of the present invention will be described below in detail with reference to the drawings. explain.

[Exposure Apparatus] FIG. 1 is a view showing a schematic configuration of a main part of an exposure apparatus according to an embodiment of the present invention, which includes an inspection apparatus and an observation apparatus according to the embodiment of the present invention. In the present embodiment, an example is described in which the present invention is applied to an exposure apparatus that transfers an image of the circuit pattern DP onto a wafer W by a step-and-repeat method using a reticle R on which a circuit pattern DP of a semiconductor element is formed. A description is given below. In the following description, the XYZ rectangular coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to the XYZ rectangular coordinate system. The XYZ rectangular coordinate system is set so that the X axis and the Y axis are parallel to the wafer stage 15, and the Z axis is
(A direction parallel to the optical axis AX of the projection optical system PL). The XYZ coordinate system in the figure is
Actually, the XY plane is set to a plane parallel to the horizontal plane, and the Z axis is set vertically upward. Note that FIG. 1 shows a state at the time of aberration measurement in which the indication plate 41 (reference member) of the aberration measurement device 40 forming a part of the inspection device according to the embodiment of the present invention is positioned on the image plane of the projection optical system PL. However, the alignment sensor 35 and the oblique incidence type autofocus system (20 to 3) which form a part of the observation device according to the embodiment of the present invention.
At the time of position detection using 2) and at the time of projection exposure, the wafer W is positioned on the image plane of the projection optical system PL.

The exposure apparatus shown in FIG. 1 uses, for example, 248 nm (Kr) as a light source 1 for supplying exposure light (illumination light).
F) or an excimer laser light source for supplying light having a wavelength of 193 nm (ArF). The substantially parallel light beam emitted from the light source 1 is shaped into a light beam having a predetermined cross section via the beam shaping optical system 2 and then enters the coherence reducing unit 3.
The coherence reducing unit 3 has a function of reducing the occurrence of an interference pattern on the reticle R, which is the surface to be irradiated (hence, on the wafer W). Details of the interference reducing unit 3 are disclosed in, for example, Japanese Patent Application Laid-Open No. Sho 59-226317. The light beam from the coherence reducing unit 3 forms a large number of light sources on the rear focal plane via the first fly-eye lens 4. After being deflected by the oscillating mirror 5, the light from these multiple light sources illuminates the second fly-eye lens 7 in a superimposed manner via the relay optical system 6.

Here, the vibrating mirror 5 is a bending mirror that rotates around the Y axis and has a function of reducing the occurrence of an interference pattern on the irradiated surface. In this way, a secondary light source including a large number of light sources is formed on the rear focal plane of the second fly-eye lens 7. The light beam from the secondary light source is restricted by an aperture stop 8 arranged in the vicinity thereof, and then is condensed via a condenser optical system 10 and a bending mirror 11.
A reticle R having a predetermined circuit pattern DP formed on the lower surface is uniformly illuminated in a superimposed manner. Here, a density filter 9 is disposed between the aperture stop 8 and the condenser optical system 10 and in the vicinity of the aperture stop 8 so as to be freely inserted into and removed from the optical path.
A lemon skin plate 12 is arranged between the folding mirror 11 and the reticle R so as to be freely inserted into and removed from the optical path.

The density filter 9 is for forming the light beam having passed through the aperture stop 8 into a light beam having a predetermined light intensity distribution, and the lemon skin plate 12 is for diffusing the incident light beam. For example, a glass substrate is subjected to a chemical treatment after being subjected to a roughening process, so as to have a large number of minute spherical surfaces (small curved surfaces) in which minute projections and depressions on the roughened surface are smoothed. The surface of the lemon skin plate 12 has a function as if an infinite number of minute microlenses were arranged. The density filter 9 and the lemon skin plate 12 are connected to the projection optical system P using, for example, an aberration measuring device 40.
It is inserted into the optical path when measuring the aberration of L. The light source 1, the beam shaping optical system 2, the coherence reducing unit 3, the first fly-eye lens 4, the vibrating mirror 5, the relay optical system 6, the second fly-eye lens 7, the aperture stop 8, and the density filter 9 described above. , The condenser optical system 10 and the bending mirror 11 constitute an illumination optical system for illuminating the reticle R during exposure. This illumination optical system also corresponds to the illumination unit according to the present invention. If there is a sufficient amount of received light, a diffusion plate having a roughened surface having a higher diffusion effect may be used instead of the lemon skin plate 12.

The light beam transmitted through the circuit pattern DP of the reticle R forms an image of the circuit pattern DP on a wafer W as a substrate via the projection optical system PL. Reticle R
Is mounted on a reticle stage 13 via a reticle holder (not shown). The reticle stage 13
Is driven by a reticle stage control unit (not shown) based on a command from the main control system 20. At this time, the movement of the reticle stage 13 is controlled by a mask interferometer (not shown).
And a movable mirror (not shown) provided on the reticle stage 13
And the measurement result is output to the main control system 20. The projection optical system PL is provided with a lens controller (not shown) for controlling optical characteristics such as imaging characteristics to be constant in response to environmental changes such as temperature and atmospheric pressure.
This lens controller section includes an aberration measuring device 4 described later.
Based on the measurement result of 0, control is also performed so that optical characteristics such as the imaging performance of the projection optical system PL are set to desired characteristics.

The wafer W is vacuum-chucked on a wafer holder 14 on a wafer stage 15. The wafer stage 15 is formed by superposing a pair of blocks (not shown) movable in the X-axis direction and the Y-axis direction in the drawing, and the position on the XY plane is adjustable. Although not shown, the wafer stage 15
It comprises a Z stage for moving the wafer W in the axial direction, a stage for slightly rotating the wafer W in the XY plane, and a stage for changing the angle with respect to the Z axis to adjust the inclination of the wafer W with respect to the XY plane. As described above, the wafer stage 15 has a movement function in the X-axis direction, a movement function in the Y-axis direction, a movement function in the Z-axis direction, a rotation function around the Z-axis,
It has a tilt function around the axis and a tilt function around the Y axis.

A movable mirror 16 having a length longer than the movable range of the wafer stage 15 is attached to one end of the upper surface of the wafer stage 15, and a laser interferometer 17 is disposed at a position facing the mirror surface of the movable mirror 16. I have. Although shown in a simplified manner in FIG. 1, the movable mirror 16 includes a movable mirror having a reflective surface perpendicular to the X axis and a movable mirror having a reflective surface perpendicular to the Y axis. In addition, the laser interferometer 17
Are two laser interferometers for the X axis that irradiate the movable mirror 16 with a laser beam along the X axis, and
6 is composed of a laser interferometer for the Y axis for irradiating a laser beam to the laser beam 6, and one laser interferometer for the X axis and one for the Y axis.
The X and Y coordinates of the wafer stage 15 are measured by the laser interferometers. Further, the rotation angle of the wafer stage 15 is measured based on the difference between the measurement values of the two X-axis laser interferometers. The rotation angle of the wafer stage 15 in the XY plane is measured based on the difference between the measurement values of the two X-axis laser interferometers. Information on the X coordinate, the Y coordinate, and the rotation angle measured by the laser interferometer 17 is supplied to the main control system 20 as stage position information. Main control system 2
Numeral 0 outputs the supplied stage position information to the stage drive system 18 while monitoring the stage position information, and controls the positioning operation of the wafer stage 15 on the order of nanometers.

The exposure apparatus of this embodiment is a so-called oblique incidence two-dimensional autofocus system for detecting the position of the wafer W along the direction of the optical axis AX of the projection optical system PL, that is, the Z-axis direction. (Hereinafter referred to as a two-dimensional AF system)
2 is provided. The oblique incidence type two-dimensional AF system includes, for example, a halogen lamp (not shown) as a light source for supplying white light having a wide wavelength width as detection light.
The illumination light from the light source passes through a relay optical system (not shown),
The light enters the light guide 21. The illumination light that has propagated inside the light guide 21 is converted into a substantially parallel light beam via a condenser lens 22, and then enters the deflection prism 23. The deflecting prism 23 deflects a substantially parallel light beam from the condenser lens 22 by a refraction action. On the exit side of the deflecting prism 23, a transmission grating pattern is formed in which elongated transmission portions extending in the X-axis direction and elongated light-shielding portions extending in the X-axis direction are alternately provided at a constant pitch.

The light transmitted through the transmission grating pattern of the deflecting prism 23 is incident on a projection condenser lens 24 disposed along an optical axis parallel to the optical axis AX of the projection optical system PL.
The light beam passing through the projection condenser lens 24 is incident on the wafer W and the sign plate 41 of the aberration measurement device 40 at a required incident angle as detection light via the mirror 25 and the projection objective lens 26. Thus, the primary image of the lattice pattern as the two-dimensional slit projection pattern is accurately formed over the entire surface of the wafer W or the sign plate 41. The light reflected by the wafer W or the sign plate 41 enters the light-receiving condenser lens 29 via the light-receiving objective lens 27 and the vibration mirror 28. The light passing through the light-receiving condensing lens 29 is incident on the tilt correction prism 30 having the same configuration as the above-described deflection prism 23. Thus, the tilt correction prism 30
A secondary image of the grating pattern is formed on the incident surface of.
Note that a two-dimensional light receiving slit is provided on the incident surface of the tilt correction prism 30. The light emitted from the emission surface of the tilt correction prism 30 enters a relay optical system 31 including a pair of lenses. The light passing through the relay optical system 31 forms a conjugate image of the secondary image of the lattice pattern formed on the incident surface of the tilt correction prism 30 and the opening of the light receiving slit on the light receiving surface of the light receiving unit 32. . Light receiving section 32
Are provided with a plurality of silicon photodiodes as two-dimensional light receiving sensors so as to optically correspond to the plurality of openings of the light receiving slit.

The exit surface of the deflecting prism 23 on which the grating pattern is formed and the exposure surface of the wafer W, the entrance surface of the tilt correction prism 30 on which the two-dimensional light receiving slit is formed, and the exposure surface of the wafer W are Scheimpflug. The conjugate relationship satisfies the condition. Here, when the wafer W or the sign plate 41 moves up and down in the Z-axis direction along the optical axis AX of the projection optical system PL, the secondary image of the lattice pattern formed on the incident surface of the tilt correction prism 30 is A lateral shift occurs in the pattern pitch direction in accordance with the vertical movement of the W or the sign plate 41. In this manner, the lateral shift amount of the secondary image of the lattice pattern is photoelectrically detected based on the principle of the photoelectric microscope, and the surface position of the wafer W or the sign plate 41 along the optical axis AX of the projection optical system PL based on the detected lateral shift amount. Is detected. Also,
Projection optical system P according to two-dimensional multipoint autofocus method
The surface position of the wafer W along the optical axis AX of L is detected two-dimensionally. As a result, it is possible to two-dimensionally align the surface position of the wafer W in the focus direction of the projection optical system PL by moving the wafer stage 15 in the Z axis direction or tilting the wafer stage 15 around the X axis and the Y axis. it can.
The details of the principle of the photoelectric microscope are disclosed in, for example, JP-A-56-42205. The details of the two-dimensional multi-point autofocus method are disclosed in, for example, Japanese Patent Application Laid-Open No. 6-97045.

Further, the exposure apparatus of the present embodiment shown in FIG. 1 includes an alignment sensor 35 forming a part of the observation apparatus according to one embodiment of the present invention. The alignment sensor 35 is an off-axis system that is provided on a side of the projection optical system PL and measures position information of the wafer W in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in an XY plane. This is an FIA type alignment sensor. Illumination light is supplied to the alignment sensor 35 from a halogen lamp 33 via a light guide 34. The illumination light is shaped and the like, and the reflection prism 36 is used to form a wafer mark WM formed on the wafer W. Epi-illumination.
In order to avoid thermal effects, the halogen lamp 33 must be used.
Is preferably provided outside the chamber where the alignment sensor 35 and the projection optical system PL are arranged. Further, the exposure apparatus of the present embodiment includes an aberration measuring device 40 which is a part of the inspection device according to the embodiment of the present invention. The aberration measuring device 40 is provided mainly for measuring the aberration of the projection optical system PL.

Hereinafter, the details of the alignment sensor 35 forming part of the observation device according to one embodiment of the present invention and the aberration measuring device 40 forming part of the inspection device according to one embodiment of the present invention will be described in order.

[Alignment Sensor Forming Part of Observation Apparatus] FIG. 2 is a view showing a configuration of an alignment sensor 35 forming part of an observation apparatus according to one embodiment of the present invention.
Illumination light having a wide wavelength bandwidth is guided from the halogen lamp 33 in FIG. 1 via a light guide 34 to the alignment sensor 35 shown in FIG. The wavelength band of the illumination light IL1 is, for example, 530 nm to 800 nm. The illumination light IL1 emitted from the emission end of the light guide 34 is restricted via an illumination aperture stop 50 having a circular opening, for example, and then enters the condenser lens 51. The illumination light IL1 that has passed through the condenser lens 51 is once collected near an illumination field stop (not shown), and enters the illumination relay lens 52 through this illumination field stop. The illumination light IL1 converted into parallel light via the illumination relay lens 52 passes through the half prism 53, and then enters an objective lens 54 as an objective optical system. The illumination light IL1 condensed by the objective lens 54 is reflected downward on the reflection surface of the reflection prism 36 in the figure, and then the wafer mark W formed on the wafer W is formed.
M is epi-illuminated. Thus, the halogen lamp 33,
Light guide 34, illumination aperture stop 50, condenser lens 51, illumination field stop (not shown), illumination relay lens 5
2. The half prism 53, the objective lens 54, and the reflection prism 36 constitute an illumination optical system for epi-illuminating the wafer mark WM.

The reflected light (including the diffracted light) from the wafer mark WM with respect to the illumination light IL1 enters the half prism 53 via the reflecting prism 36 and the objective lens 54. The light reflected upward in the figure by the half prism 53 is
An image of the wafer mark WM is formed on the index plate 56 via the second objective lens 55. The light from the mark image is XY-branched through a relay lens system including the relay lenses 57 and 60 and an image forming aperture stop 59 arranged at a position optically substantially conjugate with the illumination aperture stop 50 in the optical path. The light enters the half prism 61. The light transmitted through the XY-branch half prism 61 is converted into an X-direction CCD (Charge Coupled).
Device) 62 and the XY branch half prism 61
Is reflected by the CCD 63 for the Y direction. still,
In FIG. 2, for convenience of illustration, a reflecting mirror 58 is provided between the relay lens 57 and the relay lens 60 to deflect light passing through the relay lens 57, but the reflecting plate 58 can be omitted. Thus, the reflection prism 36, the objective lens 54, the half prism 53, the second objective lens 55,
The index plate 56, the relay lens 57, the image forming aperture stop 59, the relay lens 60, and the XY branch half prism 61
An imaging optical system for forming a mark image based on reflected light from the wafer mark WM with respect to the illumination light IL1 is configured.

The image of the wafer mark WM and the image of the index mark formed on the index plate 56 are formed on the imaging surface of the CCD 62 for the X direction and the imaging surface of the CCD for the Y direction by the imaging optical system. The X-direction CCD 62 and the Y-direction CCD 63 generate an image signal by photoelectrically converting the image formed on the imaging surface. The image signals output from the X-direction CCD 62 and the Y-direction CCD 63 are output to the main control system 20 (see FIG. 1). The main control system 20 includes the alignment sensor 3
Image processing is performed on the image signal output from the step 5 to determine, for example, the center position of the image of the wafer mark WM and the center position of the image of the index mark, and the positional information of the wafer mark WM is calculated from the relative relationship between these. .

The main control system 20 calculates the calculated wafer mark W
The position of the wafer W in the X-axis direction and the position in the Y-axis direction are calculated based on the position information of M, and a stage control signal corresponding to the calculated position of the wafer W in the X-axis direction and the Y-axis direction is transmitted to the stage drive system 18. Output to The stage control system 18 appropriately drives the wafer stage 15 in accordance with a control signal output from the main control system 20 to perform alignment (position adjustment) of the wafer W. In addition, CCD 62 for X direction, C for Y direction
The CD 63 and the main control system 20 include the alignment sensor 3
5 corresponds to position information calculating means for detecting the position of the wafer W based on the position information of the mark image formed via the imaging optical system of No. 5, and the main control system 20 and the stage drive system 1
Reference numeral 8 and the wafer stage 15 correspond to a positioning means according to the present invention.

Although the configuration of the alignment sensor 35 forming a part of the observation device according to the embodiment of the present invention has been outlined above, the objective lens 54 as the objective optical system provided in the alignment sensor 35 is used for measuring the position of the alignment sensor 35. It is manufactured by correcting aberrations as much as possible so that errors are minimized. Here, a specific lens configuration of the objective lens 54 will be described with reference to the first embodiment and the second embodiment.

[First Embodiment of Objective Lens 54] FIG.
FIG. 2 is a diagram illustrating a configuration of an objective lens 54 according to a first example provided in an alignment sensor 35 that is a part of an observation device according to an embodiment of the present invention. As shown in FIG. 3, the objective lens 54 of the first embodiment includes, in order from the object side (that is, the wafer mark WM side), a first lens group G11 having a positive refractive power and a second lens group G11 having a negative refractive power. It is composed of a lens group G12. Here, the first lens group G11 is formed by bonding a biconvex lens L11, a negative meniscus lens having a convex surface facing the object side, a biconvex lens, and a negative meniscus lens having a concave surface facing the object side in this order from the object side. It is composed of a lens L12 and a cemented lens L13 formed by bonding a biconvex lens and a biconcave lens. The second lens group G12 includes, in order from the object side, a cemented lens L14 and a biconcave lens L15a formed by bonding a positive meniscus lens having a convex surface facing the object side and a negative meniscus lens having a convex surface facing the object side. Convex lens L15b
And a cemented lens L15 formed by bonding. Note that a reflection prism 36 is disposed in the optical path between the objective lens 54 and the wafer mark WM.

Table 1 below shows values of the specifications of the objective lens 54 of the first embodiment. In Table 1, f is the first
The focal length of the objective lens 54 of the example and NA represent the object-side numerical aperture of the objective lens of the first example, respectively.
The surface number indicates the order of the surface from the wafer side along the traveling direction of the light beam from the wafer surface, which is the object surface, to the image surface.
Represents the radius of curvature (mm) of each surface, d represents the on-axis spacing of each surface, that is, the surface spacing (mm), and n represents the d line (wavelength λ = 587.6n).
m) denotes the refractive index, and v denotes the Abbe number. In the first embodiment, the distance from the object surface (wafer surface) to the object-side surface of the lens L11 is 48.5 mm.
And a thickness of 28 mm and a refractive index of 1.568 during the interval.
A glass block 83 (corresponding to the reflection prism 36) having an Abbe number of 56.05 is arranged. In the following [Table 1], the distance from the object plane to the object-side surface of the lens L11 is represented by an air-equivalent length.

[Table 1] (Main specifications) f = 30.0 mm NA = 0.3 (Optical member specifications) Surface number r dn ν (Wafer surface) 38.3 1 201.94 5.0 1.74443 49.52 (Lens L11) 2- 37.92 0.1 3 151.01 4.0 1.71700 48.04 (Lens L12) 4 29.52 9.5 1.49782 82.52 5 -27.11 3.0 1.61266 44.41 6 -87.01 0.27 31.19 8.5 1.49782 82.52 (Lens L13) 8 -32.63 4.0 1.52682 51.35 9 167.46 1.5 10 28.49 8.0 1.49782 82.52 (Lens L12) (Lens L14) 11 114.92 10.7 1.67163 38.80 12 15.00 7.0 13 -15.44 6.2 1.65128 38.18 (Lens L15) 14 331.20 10.8 1.71736 29.46 15 -27.17

[Second Embodiment of Objective Lens 54] FIG.
FIG. 9 is a diagram illustrating a configuration of an objective lens 54 according to a second example provided in the alignment sensor 35 forming a part of the observation device according to the embodiment of the present invention. As shown in FIG. 4, the objective lens 54 of the second embodiment has a configuration similar to that of the objective lens 54 of the first embodiment. Objective lens 5 of first embodiment
4 is different from the cemented lens L in the first lens group G1.
Numeral 23 is that the biconvex lens and the biconcave lens are bonded together.

Table 2 below shows values of the specifications of the objective lens 54 of the second embodiment. In Table 2, f represents the focal length of the objective lens 54, and NA represents the object-side numerical aperture of the objective lens 54, respectively. The surface number indicates the order of the surface from the wafer side along the direction in which light rays travel from the wafer surface, which is the object surface, to the image surface, and r indicates the radius of curvature of each surface (m
m), d is the on-axis spacing of each surface, that is, the surface spacing (mm), n
Is the refractive index for d-line (wavelength λ = 587.6 nm),
ν indicates the Abbe number, respectively. As in the first embodiment, the distance from the object surface (wafer surface) to the object-side surface of the lens L21 is 48.5 mm. 5
6.05 glass block (corresponding to reflective prism 36)
Is arranged. In the following [Table 2], the distance from the object plane to the object-side surface of the lens L21 is represented by an air-converted length.

[Table 2] (Main Specifications) f = 30.0 mm NA = 0.3 (Optical Member Specifications) Surface Number r dn ν (Wafer Surface) 38.3 1 367.86 5.0 1.74443 49.52 (Lens L21) 2- 37.33 0.1 3 89.88 4.0 1.67163 38.80 (Lens L22) 4 30.92 9.5 1.49782 82.52 5 -30.42 3.0 1.61266 44.41 6 -740.30 0.2 7 34.75 8.0 1.49782 82.52 (Lens L8) 8 -30.86 4.0 1.52682 51.35 9 -239.23 0.2 10 19.14 8.6 1.49782 82.52 (Lens L24) 11 68.11 5.0 1.61266 44.41 12 11.63 5.5 13 -18.46 10.0 1.65128 38.18 (Lens L25) 14 34.04 10.5 1.72825 28.34 15 -41.13

[Aberration Measuring Apparatus Forming Part of Inspection Apparatus] Next, the aberration measuring apparatus 40 forming a part of the inspection apparatus according to one embodiment of the present invention provided in the exposure apparatus according to one embodiment of the present invention will be described in detail. explain. As shown in FIG. 1, the aberration measuring device 40 includes a sign plate 41 as a reference member, a collimator lens 42 and relay lenses 43 and 44 as an objective optical system, a micro fly's eye 45 as a wavefront splitting element, and photoelectric detection. It is configured to include a CCD 46 as a unit. FIG. 5 is a diagram schematically illustrating a main configuration of the wavefront measuring device 40 illustrated in FIG. 1. Note that FIG. 5 shows a state in which the aberration measuring device 40 is developed along the optical axis AX1. When the aberration measuring device 40 of the present embodiment measures the aberration of the projection optical system PL as the test optical system, a test reticle TR for measuring aberration is installed on the reticle stage 13. FIG. 6 is a top view of the test reticle TR. As shown in FIG. 6, the test reticle TR
Has a circular opening tr for measuring aberration of the projection optical system PL.
1 along the X-axis direction and the Y-axis direction.
) Are arranged at equal intervals. Also, a square-shaped opening tr2 substantially larger than the opening tr1 is formed.

Further, the inspection apparatus of the present embodiment includes a marking plate 41 mounted on the wafer stage 15 at a position substantially equal to the surface of the wafer W (position in the Z-axis direction). The marking plate 41 is made of, for example, a glass substrate, and its surface is formed perpendicular to the optical axis AX of the projection optical system PL, and furthermore, perpendicular to the optical axis AX1 of the aberration measuring device 40. FIG. 7 is a top view of the marking plate 41. As shown in FIG. 7, a calibration opening 41
a are formed, and a plurality of sets (four sets in the example shown in FIG. 7) of alignment marks 41b are formed around the set. Here, the calibration opening 41a is set to be larger than the image of the opening tr1 of the test reticle TR formed via the projection optical system PL. Each set of alignment marks 41b is composed of a line and space pattern formed along the X-axis direction and a line and space pattern formed along the Y-axis direction. Further, a reflection surface 41c is formed in a region excluding the calibration opening 41a and the plurality of alignment marks 41b. The reflection surface 41c is formed, for example, by depositing chromium (Cr) on a glass substrate.

The image of the opening tr1 of the test reticle TR passes through a calibration opening 41a formed in a sign plate 41 arranged on the image plane of the projection optical system PL, and passes through a collimating lens 42 and relay lenses 43 and 44. Are sequentially incident on the micro fly's eye 45. FIG. 8 is a front view of the micro fly's eye 45. As shown in FIG. 8, the micro fly's eye 45 is an optical element composed of a large number of minute lenses 45a having a positive refractive power in a square shape arranged vertically and horizontally and densely. The micro fly's eye 45 is formed by, for example, performing an etching process on a parallel flat glass plate to form a microlens group. Therefore, the light beam that has entered the micro fly's eye 45 has a large number of minute lenses 4
An image of the opening tr1 formed in the test reticle TR is formed in the vicinity of the rear focal plane of each of the microlenses 45a. In other words, near the rear focal plane of the micro fly's eye 45,
Many images of the opening tr1 are formed. Many images thus formed are detected by the CCD 46 as a two-dimensional image sensor. The output of the CCD 46 is supplied to the main control system 20. The aberration measuring device 40 having the above configuration is
It is integrally attached to the wafer stage 15 and moves in accordance with the movement of the wafer stage 15.

The configuration of the aberration measuring device 40 forming a part of the inspection device according to one embodiment of the present invention has been outlined above. Is manufactured by correcting the aberration as much as possible so that the measurement error of the aberration measuring device 40 is minimized. That is, the projection optical system PL
The reticle R is manufactured so that aberrations are set to be small enough to transfer an image of the circuit pattern DP formed on the reticle R to each shot area of the wafer W with high resolution. Therefore, if the aberration generated by the aberration measurement device 40 that measures the sufficiently small aberration of the projection optical system PL is large, the aberration of the projection optical system PL cannot be accurately measured. For this purpose, the collimating lens 42 is manufactured so as to minimize aberration. Here, specific lens configurations of the collimating lens 42 and the relay lenses 43 and 44 will be described with reference to a first embodiment and a second embodiment.

[First Embodiment of Collimating Lens 42 and Relay Lenses 43 and 44] FIG. 9 shows a collimator according to a first embodiment provided in an aberration measuring apparatus 40 which is a part of an inspection apparatus according to one embodiment of the present invention. FIG. 3 is a diagram illustrating the configuration of a lens and relay lenses 43 and 44. The collimating lens 42 and the relay lenses 43 and 44 as the objective optical system according to the first embodiment convert the light beam condensed at the object point O or the light beam emitted from the object point O almost without generating aberration. Is an optical system that collimates the exit pupil P, and has a wavelength of 248 nm (KrF excimer laser wavelength)
This is an optical system optimized for the light. The collimating lens 42 provided in the objective optical system according to the first embodiment has a configuration shown in FIG.
As shown in the figure, in order from the object side (object point O side), a parallel flat glass L31, positive meniscus lenses L32 to L34 with concave surfaces facing the object side, biconvex lenses L35 and L36, and a positive meniscus with convex surface facing the object side It comprises a lens L37 and a biconcave lens L38. In addition, relay lens 4
3 is a biconvex lens L39 in order from the object side, a positive meniscus lens L40 having a convex surface facing the object side, and a biconcave lens L
The relay lens 44 includes a biconcave lens L42 in order from the object side, and includes a positive meniscus lens L43 having a concave surface facing the object side, and a biconvex lens L44.

Here, the positive meniscus lens L33 and the biconvex lens L35 constituting the collimating lens 42 are formed of fluorite (chemical formula: CaF ₂ : described as “CAF2” in the following Table 3), and the positive meniscus lens L32, L3
4. Biconvex lens L36 and positive meniscus lens L37
Is formed of quartz (denoted by “QUARTZ” in Table 3 below), and the parallel plane glass L31 and the biconcave lens L38 are formed of quartz. In addition, relay lens 4
Positive meniscus lenses L39 and L40 constituting the lenses 3 and 44
Are formed of fluorite, the biconvex lenses L39 and L44 are formed of quartz, and the biconcave lenses L41 and L42 are formed of quartz. The refractive index of fluorite at a reference wavelength of 248 nm is 1.46788, and that of quartz is 1.50839. The following Table 3 shows the objective optical system (reference wavelength 248) of the first embodiment.
nm) are listed. In [Table 3],
An object is placed at an infinite position on the exit pupil P side, and ray tracing is performed from the exit pupil P side toward the object side (object point O side).
In Table 3, NA is the numerical aperture of the objective optical system, and the surface number is the order of the lens surface of the optical member from the exit pupil P side.
In the following embodiments, for example, [mm] can be used as a unit of the radius of curvature, the interval, and the effective diameter.

[Table 3] (Main Specifications) NA = 0.83 Maximum Image Height = 0.02 Surface Number Curvature Radius Interval Member Effective Diameter 0 (Object) ∞ ∞ 1 (Aperture) ∞ 32.8 10.208 2 27.17 2.6 'QUARTZ '10.425 3 -51.60 0.5 10.191 4 14.09 2.5' CAF2 '9.711 5 113.57 3.8 8.965 6 -36.50 2.5' QUARTZ '6.778 7 28.48 35.9 5.866 8 -22.35 2.0' QUARTZ '8.129 9 40.68 3.3 9.128 10 -85.39 3.2' CAF2 '11.242 11 -15.69 0.5 12.359 12 34.80 3.1 'QUARTZ' 13.275 13 -39.43 33.5 13.488 14 -18.41 2.8 'QUARTZ' 13.324 15 28.75 5.3 14.592 16 -52.62 4.9 'QUARTZ' 17.239 17 -31.79 0.5 19.594 18 126.02 4.7 'QUARTZ' 21.003 19 -36.55 0.5 21.767 20 53.39 3.8 'CAF2' 22.212 21 -135.00 0.5 22.116 22 15.69 4.7 'QUARTZ' 21.381 23 33.98 0.5 20.049 24 12.50 5.0 'CAF2' 18.085 25 38.13 0.5 15.974 26 9.14 4.2 'QUARTZ' 12.732 27 26.26 0.9 9.450 28 ∞ 6.0 'QUARTZ' 0.932 29 ∞ 0.0 0.040 30 (image plane) ∞ 0.0

[Second Embodiment of Collimating Lens 42 and Relay Lenses 43 and 44] FIG. 10 shows a collimator according to a second embodiment provided in an aberration measuring device 40 which is a part of an inspection device according to one embodiment of the present invention. FIG. 3 is a diagram illustrating a configuration of a lens 42 and relay lenses 43 and 44. The collimating lens 42 and the relay lenses 43 and 44 as the objective optical system according to the second embodiment convert the light beam condensed at the object point O or the light beam emitted from the object point O almost without generating aberration. Is an optical system that collimates the exit pupil P, and has a wavelength of 193 nm (wavelength of an ArF excimer laser)
This is an optical system optimized for the light. The collimating lens 42 provided in the objective optical system according to the second embodiment is different from the one shown in FIG.
As shown in FIG. 0, in order from the object side (object point O side), parallel flat glass L51, positive meniscus lenses L52 to L54 with concave surfaces facing the object side, biconvex lenses L55 and L56, and positive with convex surface facing the object side. It comprises a meniscus lens L57 and a biconcave lens L58. The relay lens 43 includes a biconvex lens L59, a positive meniscus lens L60 having a convex surface facing the object side, and a biconcave lens L61 in order from the object side. The relay lens 44 includes a biconcave lens L62 in order from the object side. A positive meniscus lens L63 having a concave surface facing the object side, and a biconvex lens L64
It is composed of

Here, the positive meniscus lens L53 and the biconvex lens L55 constituting the collimating lens 42 are formed of fluorite (chemical formula: CaF ₂ : described as “CAF2” in the following [Table 4]), and the positive meniscus lens L52, L5
4. Biconvex lens L56 and positive meniscus lens L57
Is formed of quartz (denoted by "QUARTZ" in Table 4 below), and the parallel plane glass L51 and the biconcave lens L58 are formed of quartz. In addition, relay lens 4
Positive meniscus lenses L59 and L60 constituting the lenses 3 and 44
Is formed of fluorite, the positive meniscus lens L63 and the biconvex lens L64 are formed of quartz, and the biconcave lenses L61 and L61 are formed of quartz.
L62 is formed of quartz. Note that the reference wavelength is 193n.
The refractive index of fluorite at m is 1.50145 and the refractive index of quartz is 1.56033. Table 4 below shows data of the objective optical system (reference wavelength: 193 nm) of the second embodiment.
In [Table 4], similarly to [Table 3], an object is arranged at an infinite position on the exit pupil P side, and ray tracing is performed from the exit pupil P side toward the object side (object point O side). Do. [Table 4]
NA in the figure is the numerical aperture of the objective optical system, and the surface number is the order of the lens surface of the optical member from the exit pupil P side. In the following embodiments, for example, [mm] can be used as a unit of the radius of curvature, the interval, and the effective diameter.

[Table 4] (Main Specifications) NA = 0.81 Maximum Image Height = 0.02 Surface Number Curvature Radius Interval Member Effective Diameter 0 (Object) ∞ ∞ 1 (Aperture) ∞ 32.8 10.244 2 24.93 2.8 'QUARTZ '10.455 3 -68.09 0.5 10.149 4 16.49 2.6' QUARTZ '9.693 5 152.58 3.7 8.871 6 -40.22 2.2' QUARTZ '6.574 7 23.34 33.8 5.728 8 -35.89 2.2' QUARTZ '7.608 9 51.09 4.1 8.445 10 -47.65 3.5' CAF2 '10.716 11 -16.98 0.5 12.033 12 46.42 4.0 'CAF2' 12.763 13 -31.24 33.2 13.163 14 -25.12 3.0 'QUARTZ' 12.997 15 23.89 4.7 13.915 16 -44.90 4.0 'QUARTZ' 16.032 17 -34.44 1.0 18.059 18 88.49 4.5 'QUARTZ' 19.726 19 -55.87 0.5 20.589 20 47.07 5.0 'CAF2' 21.231 21 -72.19 0.5 21.238 22 15.69 4.7 'QUARTZ' 20.490 23 27.20 0.5 18.790 24 12.50 5.0 'CAF2' 17.346 25 43.59 0.5 15.180 26 9.141 4.0 'QUARTZ' 12.146 27 20.87 1.0 8.820 28 ∞ 6.0 'QUARTZ' 7.335 29 ∞ 0.0 0.040 30 (image plane) ∞ 0.0 0.040

The configuration of the wavefront aberration device 40 that is a part of the inspection device according to the embodiment of the present invention has been described above. Next, the wavefront aberration of the projection optical system PL is measured using the wavefront aberration device 40. In measuring the wavefront aberration of the projection optical system PL, the density filter 9 and the lemon skin plate 12 are used.
(See FIG. 1) is inserted into the optical path, and the test reticle TR is placed on the reticle stage 13. The density filter 9 is inserted into the optical path to convert the light beam passing through the aperture stop 8 into a light beam having a predetermined light intensity distribution, and the lemon skin plate 12 is inserted to diffuse the incident light beam. It is. In general, in the exposure apparatus, the numerical aperture (NA) of the illumination light supplied from the illumination optical system (the light source 1 to the bending mirror 11) is set smaller than the object-side numerical aperture of the projection optical system PL. Therefore, test reticle T
Even if the opening tr1 of R is illuminated, the light passing through the opening tr1 enters the projection optical system PL with an insufficient numerical aperture. Thus, as shown in FIG. 5, the aperture tr1 is illuminated (incoherent illumination) with a numerical aperture NAi equal to or larger than the object-side numerical aperture NAp of the projection optical system PL using the lemon skin plate 12. Although not shown, a reticle blind that defines an illumination area of the reticle R (test reticle TR) is provided in the illumination optical system, and a plurality of openings formed in the test reticle TR by the reticle blind. The illumination light is set so that only the first opening tr1 arbitrarily selected among the portions tr1 is illuminated.
If there is a sufficient amount of received light, a diffusion plate having a roughened surface having a higher diffusion effect may be used instead of the lemon skin plate 12.

The density filter 9, the lemon skin plate 1
2, while the arrangement of the test reticle TR is being performed, the main control system 20 moves the wafer stage 15 in the XY plane via the stage drive system 18 and
Is moved into the exposure area of the projection optical system PL, and eventually into the detection field of view of the two-dimensional AF system. In this state, the position information of the sign plate 41 in the Z-axis direction, the inclination around the X-axis and the inclination around the Y-axis are detected using a two-dimensional AF system, and based on the detection results, the Z-axis direction of the wafer stage 15 is detected. Is adjusted to align the upper surface of the sign plate 41 with the image plane of the projection optical system PL. Next, the wafer stage 15 is driven in the XY plane to move the aberration measuring device 40 into the detection field of view of the alignment sensor 35, and the position of the alignment mark 41b formed on the marking plate 41 using the alignment sensor 35. By measuring the information, the position of the optical axis AX1 of the aberration measuring device 40 in the XY plane is detected. When the position information of the optical axis AX1 of the aberration measuring device 40 in the XY plane is thus detected, the main control system 20 sets the wafer stage 15
Is moved in the XY plane, and the calibration opening 41a formed in the sign plate 41 is formed at a position where the image of the first opening tr1 arbitrarily selected is projected via the projection optical system PL.
Position. In this positioned state, the center point of the image of the first opening tr1 formed via the projection optical system PL and the optical axis AX1 of the aberration measuring device 40
Coincide in the XY plane.

When the first opening tr1 arbitrarily selected is illuminated in the state where the above-mentioned positioning is performed, the image of this opening tr1 is transmitted through the projection optical system PL to the sign board 41.
An image is formed at the position of the calibration opening 41a formed at the position. Since the calibration opening 41a is set to be larger than the image of the opening tr1 of the test reticle TR formed via the projection optical system PL, the image of the opening tr1 is vignetted by the calibration opening 41a. Without passing through the calibration opening 41a. After that, the image of the opening tr1 is
2. The light enters the micro fly's eye 45 via the relay lenses 43 and 44 in order. Here, when the aperture tr1 is illuminated with the numerical aperture NAi equal to or larger than the object-side numerical aperture NAp of the projection optical system PL, as shown in FIG. It can be considered that there are many independent imaging optics.
FIG. 11 shows each micro lens 45 of the micro fly eye 45.
FIG. 6 is a diagram illustrating a state in which a number of independent imaging optical systems exist for each a. As shown in FIG. 11, each imaging optical system includes:
Under the influence of a part of the wavefront aberration corresponding to the size of each minute lens 45a, the image of the opening tr1 is formed on the imaging surface of the CCD 46 incoherently.

Here, suppose that no aberration remains in the projection optical system PL, no residual aberration occurs in the collimator lens 42 and the relay lenses 43 and 44 of the aberration measuring device 40, and the micro fly's eye 45 is designed as designed. In this case, the barycentric position of the light amount of each image in the opening tr1 is defined as the intersection point between the optical axis of each micro lens 45a of the micro fly's eye 45 and the imaging surface of the CCD 46 (hereinafter, this position is referred to as the origin position). Live). However, in practice, since the aberration remains in the projection optical system PL, the center of gravity of the amount of light of each image in the opening tr1 is displaced from each origin position for measurement. For example, each minute lens 45a
When there is a tilt component (tilt component) in the wavefront incident on the micro lens 45, it is obvious from the imaging theory that the position of the image formed via each microlens 45a is shifted. As described above, in the present embodiment, the wavefront aberration of the projection optical system PL is measured based on the above-described positional deviation information included in the output of the CCD 46.

To measure the wavefront aberration of the projection optical system PL, first, the above-mentioned positional deviation information is obtained from the detection result output from the CCD 46. This positional shift information is obtained as information indicating how much the center of gravity of the light quantity of each image of the opening tr1 formed by each microlens 45a in the XY plane has shifted from the above-mentioned origin position. Next, a Zernike cylindrical function system Zn (ρ, θ) is fitted to the obtained positional deviation information to obtain an expansion coefficient Cn for each term. The expansion coefficient Cn and the Zernike cylindrical function Zn Finally, the wavefront aberration W (ρ, θ) is obtained from the above equation (1) using (ρ, θ). In the above (1), ρ is the exit pupil P (for example, FIGS. 11 and 12).
Is a normalized pupil half-pupil in which the radius of the exit pupil P) is normalized to 1, and θ is the radial angle of the polar coordinate set on the exit pupil plane. This process is performed by the main control system 20.

The main control system 20 performs the above-described processing on the detection result output from the CCD 46 to measure the wavefront aberration of the projection optical system PL. From this measurement result, a tilt component, a power component (defocus component), and an astigmatic difference component (as component) are obtained. , Can be obtained from the astigmatic difference component. Next, the aberration measuring device 40 is finely moved so that the tilt component and the power component become as small as possible. At this time, the absolute value of the distortion is determined based on the fine movement amount Δx in the X-axis direction and the fine movement amount Δy in the Y direction of the aberration measurement device 40, and the absolute position of the focus surface is determined based on the fine movement amount Δz in the Z direction of the aberration measurement device 40. Can also be obtained respectively. In this manner, the wavefront aberration of the projection optical system PL is finally measured with high accuracy based on the output of the CCD 46, with the tilt component and the power component reduced as much as possible. The above-described operation of measuring the wavefront aberration is similarly sequentially performed on the remaining plurality of openings provided in the test reticle TR.

[Self-Calibration of Aberration Measuring Apparatus] By the way, in order to accurately measure the wavefront aberration of the projection optical system PL mounted on the exposure apparatus, the influence of the wavefront aberration generated by the aberration measuring apparatus 40 itself is taken into consideration. Must. The aberration measuring device 40 includes a collimating lens 42, relay lenses 43 and 44, a micro fly's eye 45, a CC
Optical members such as D46 and a mirror (see FIG. 1) are used. The manufacturing error of these optical members depends on the projection optical system PL.
Is added to the measured value when the wavefront aberration is measured. In order to minimize the influence of the aberration measuring device 40 on the measured values such as the wavefront aberration, the tolerance of each optical member constituting the aberration measuring device 40 is set very tight, and the projection optical system as the test optical system is set. A method of suppressing the amount of wavefront aberration generated by the aberration measuring device 40 sufficiently smaller than the amount of generated wavefront aberration of the system PL, or correcting the measured value by grasping in advance the influence of the wavefront aberration or the like generated by the aberration measuring device 40 itself. There is a way to do it.

As in this embodiment, when the test optical system is the projection optical system PL mounted on the exposure apparatus, the projection optical system PL
It is practically almost impossible to suppress the amount of wavefront aberration generated by the aberration measuring device 40 sufficiently small. This is because the amount of wavefront aberration remaining in the projection optical system PL of the exposure apparatus is originally suppressed to a very small value. on the other hand,
In order to strictly set the surface accuracy of the lens component and the mirror component constituting the aberration measuring device 40, it is necessary to improve the uniformity of the optical material (optical glass) itself or to reduce the absolute value accuracy of the interferometer for measuring the surface accuracy. Must be improved. In order to improve the accuracy of the interferometer, it is necessary to improve the accuracy at the component level such as the Fizeau lens and the reference spherical mirror constituting the interferometer and to grasp the error. Stricter accuracy is also required of the polishing machine itself for improving the surface accuracy, and in some cases, a partially modified polishing technique for partially correcting the surface accuracy must be applied. By enumerating in this way, it is understood how difficult it is to suppress the amount of wavefront aberration generated by the aberration measuring device 40 itself sufficiently smaller than the projection optical system PL. Accordingly, the amount of wavefront aberration generated by the aberration measuring device 40 itself is suppressed to a certain allowable range, and the measured value is corrected based on the error of the aberration measuring device 40. It can be seen that it is desirable to correct the influence of wavefront aberration and the like generated by the measuring device 40 itself. Less than,
The self-calibration of the aberration measurement device 40 will be described.

When the self-calibration of the aberration measuring device 40 is performed, first, the aberration of the image of the square opening tr2 (see FIG. 6) of the test reticle TR is projected through the projection optical system PL. The measuring device 40 is positioned. In this state, the illumination light from the illumination optical system (the light source 1 to the bending mirror 11) illuminates the calibration opening 41a of the sign plate 41 via the projection optical system PL. Here, the image of the opening tr2 projected onto the marking plate 41 via the projection optical system PL is substantially larger than the calibration opening 41a. That is, when measuring the aberration of the projection optical system PL, the opening tr formed in the test reticle TR is measured.
Although the image of No. 1 passed through the calibration opening 41a without vignetting in the calibration opening 41a, in the case of self-calibration, the image of the opening tr2 is replaced with the calibration opening 41a.
Therefore, vignetting is caused by the calibration opening 41a. The light emitted from the calibration opening 41a is transmitted to the collimator lens 42, the relay lenses 43, 4
4 and the micro fly eye 45 in order, and the CCD
A large number of images of the calibration opening 41a are formed on the light receiving surface 46. If the aberration measuring device 40 has no aberration and there is no manufacturing error of the micro fly's eye 45 and the CCD 46,
Each image of the calibration opening 41 a is a micro fly eye 45.
Should be formed neatly on the optical axis of each micro lens 45a. However, the wavefront aberration of the aberration measuring device 40, the manufacturing error of the micro fly's eye 45, the CCD 46
Due to the arrangement error or the like of the light receiving elements, the center of gravity of the light amount of each aperture image actually measured is shifted from the ideal position assumed in design.

The displacement of the image of each of the calibration openings 41a generated here is caused only by the aberration measuring device 40 and is not affected by the wavefront aberration of the projection optical system PL. Because, in the self-calibration state, the projection optical system PL includes the illumination optical system and the aberration measurement device 40.
This is because it merely fulfills the function of the illumination relay optical system arranged in the optical path between them. Aberration measurement device 40
In order to eliminate the influence of the aberration and the like caused by the above, the position of the opening image detected in the self-calibration state is newly set to each origin for measurement. And the projection optical system P
When measuring the wavefront aberration of L, by measuring the wavefront aberration based on each new measurement origin set at the time of self-calibration, errors such as wavefront aberration generated by the aberration measurement device 40 itself are reduced. Highly accurate wavefront aberration measurement can be performed without substantially affecting the measurement result of the projection optical system PL.

An error due to a difference between the environment at the time of measuring the wavefront aberration of the projection optical system PL and the environment at the time of self-calibration is considered. Specifically, there are an error caused by a change in wavelength, an error caused by a change in temperature, an error caused by a change in atmospheric pressure, and the like. All of these environmental fluctuations cause measurement errors of the aberration measurement device 40,
The components that are mainly affected are low-order aberrations equal to or less than the third-order aberration (up to five Seidel aberrations in geometrical optics). Here, the error due to the change in the wavelength and the error due to the change in the atmospheric pressure affect the aberration measuring device 40, but the amount of the error is almost as designed and can be predicted by software. is there. For errors caused by temperature fluctuations, it is necessary to measure errors that occur under multiple temperature conditions during self-calibration, and to predict changes in errors due to temperature fluctuations based on the measured errors. Can be.

In the above, the configuration of the exposure apparatus, the observation apparatus, and the inspection apparatus according to the embodiment of the present invention and the outline of the operation thereof have been described. As described above, the objective lens 54 as an objective optical system included in the alignment sensor 35 that forms a part of the observation device is configured so that various aberrations including chromatic aberration are satisfactorily corrected at the design stage in order to minimize measurement errors.
It is designed to have excellent imaging performance. In order to exhibit such excellent imaging characteristics, it is necessary to accurately adjust each lens at the stage of manufacturing the objective optical system. Similarly, the collimator lens 42 and the relay lenses 43 and 44 as the objective optical system included in the aberration geodesic device 40 forming a part of the inspection device are also designed at the design stage so that the residual aberration of the projection optical system PL can be measured with high accuracy. Designed. The aberration measuring device 40 measures only the residual aberration of the projection optical system PL by removing the influence of the aberration generated in the aberration measuring optical system 40 itself by performing the above-described self-calibration. However, if the aberration produced by the aberration measuring device 40 itself is too large, the influence of the aberration produced by the aberration measuring device 40 itself cannot be eliminated by the self-calibration, or even if it can be eliminated, the CCD 46 Since the error in obtaining the wavefront aberration W (ρ, θ) by fitting the Zernike cylindrical function system Zn (ρ, θ) to the output becomes large, the residual error of the projection optical system PL is measured with a large error. Will be done. Therefore, it is necessary to accurately adjust each lens in the objective optical system included in the aberration measuring device 40 at the manufacturing stage. Hereinafter, a method for manufacturing an objective optical system according to an embodiment of the present invention will be described in detail.

[Method of Manufacturing Objective Optical System] FIG. 12 is a flowchart showing a method of manufacturing the objective optical system according to one embodiment of the present invention. Note that the flowchart shown in FIG. 12 illustrates a flowchart in the case of manufacturing the objective lens 54 as an objective optical system provided in the alignment sensor 35 forming a part of the observation device. 12 will be described as an example, but the flow chart shown in FIG. 12 is also used when manufacturing the collimator lens 42 and the relay lenses 43 and 44 as the objective optical system provided in the aberration measuring device 40 as the inspection device. It is manufactured through the same steps as described above. Further, in the following description, a case where the objective lens 54 of the first embodiment shown in FIG. 3 is manufactured will be described as an example.

In manufacturing the objective lens 54, first, the lenses L11 to L15 constituting the objective lens are manufactured within a tolerance based on a design value. In addition, the lenses L11 to L11
Separately from the manufacture of the lens 15, a lens chamber as a hardware for holding each of the lenses L11 to L15 and a lens barrel holding the lens chamber in which the lens is incorporated are manufactured within a tolerance based on design values. . When the lenses L11 to L15 and the lens chambers constituting the objective lens 54 are manufactured, the lenses corresponding to the respective lens chambers are inserted, and the eccentricity is adjusted so that the lens chambers are not decentered. Lens L11-L
When assembly of the lens 15 into the lens chamber is completed, each lens L
The objective lens 54 is assembled by assembling the objective lens 54 in a state where the lenses 11 to L15 are held by the lens chamber (step S10).

FIG. 13 shows the assembled objective lens 54.
FIG. As shown in FIG. 13, each lens L1
1 to L15 are the corresponding lens chambers LC1 to LC
5 is incorporated in the lens barrel MT. A spacing ring SA is provided between the lens chamber LC3 holding the lens L13 and the lens chamber LC4 holding the lens L14. The distance ring SA adjusts the distance between the lens L13 and the lens L14 to adjust the distance between the objective lens 5 and the lens L14.
4 is provided for adjusting (correcting) aberrations (particularly, spherical aberrations) generated in Step 4. The lens barrel MT is provided with an eccentricity adjusting screw VS5 for adjusting the eccentricity of the lens L15, for example. Although not shown, an eccentricity adjusting screw V for adjusting the eccentricity of the other lenses L11 to L14.
S1 to VS4 are also provided as needed.

When the assembly of the objective lens 54 is completed,
Next, a step of measuring the transmitted wavefront aberration (wavefront aberration based on transmitted light) of the objective lens 54 assembled using the interferometer is performed (step S12). FIG. 14 is a diagram showing a schematic configuration of an interferometer device used when measuring the wavefront aberration of the objective lens 54 in step S12. In the interferometer device 70 shown in FIG. 14, light emitted from the interferometer unit 72 controlled by the control system 71 enters a Fizeau flat 73 supported on a Fizeau stage 73a. Here, the light reflected by the Fizeau flat 73 returns to the interferometer unit 72 as reference light. On the other hand, the light transmitted through the Fizeau flat 73 enters the lens to be measured 74 as measurement light.
When measuring the wavefront aberration of the objective lens 54 described above, the objective lens 54 is arranged as the lens 74 to be measured. The measurement light transmitted through the lens to be measured 74 is incident on the reflection spherical unit 76 via a parallel flat plate 75 having an optical path length corresponding to the reflection prism 36 (see FIG. 1) provided on the alignment sensor 35. The measurement light reflected by the reflective spherical unit 76 returns to the interferometer unit 72 via the parallel flat plate 75, the lens to be measured 74, and the Fizeau flat 73. In this manner, based on the phase shift between the reference light and the measurement light returned to the interferometer unit 72,
The wavefront aberration remaining on the objective lens 54 as the lens to be measured 74 is measured by the control system 71.

When the wavefront aberration is measured, a wavefront aberration component is extracted based on the measurement result (step S14). Specifically, the control system 71 applies the Zernike cylindrical function system Zn (ρ,
θ) is fitted to determine the expansion coefficient Cn for each term. Referring to equation (1), since the sum of each product of the product of the expansion number Cn and the Zernike cylindrical function system Zn (ρ, θ) is the wavefront aberration W (ρ, θ), Expansion coefficient Cn
Is a numerical value indicating the magnitude of the wavefront aberration component.
Thus, the wavefront aberration component is extracted by obtaining the expansion coefficient Cn. Here, among the Zernike cylindrical function systems Zn (ρ, θ), the cylindrical function systems Z1 to Z9 according to the first to ninth terms are as follows. n: Zn (ρ, θ) 1: 1 2: ρcosθ 3: ρsinθ 4: 2ρ 2 -1 5: ρ 2 cos2θ 6: ρ 2 sin2θ 7: (3ρ 2 -2) ρcosθ 8: (3ρ 2 -2) ρ sin θ 9: 6ρ ⁴ -6ρ ² +1

Here, the first term relating to the expansion coefficient C1 is a constant term. In addition, the second factors related to the expansion coefficients C2 and C3
The term and the third term are tilt components (X-axis direction and Y-axis direction). Further, the fourth term related to the expansion coefficient C4 is a power component (focus component). Here, the fourth term relating to the expansion coefficient C4 to the ninth term relating to the expansion coefficient C9 correspond to Seidel's five aberrations in geometrical optics (they do not completely match). The fifth and sixth terms relating to the expansion coefficients C5 and C6 are ass components, and correspond to astigmatism in geometrical optics. The seventh and eighth terms relating to the expansion coefficients C7 and C8 are coma aberration components. The ninth term corresponding to coma aberration (eccentric coma aberration) in geometrical optics and the expansion coefficient C9 is a spherical aberration component, and corresponds to spherical aberration in geometrical optics. In this embodiment, these low-order spherical aberration components are extracted, and the aberration components are adjusted (corrected) by adjusting the lenses L11 to L15 provided in the objective lens 54 based on the extracted components. The aberration remaining in the objective lens 54 is adjusted (corrected) in the following procedure.

When the respective wavefront aberration components are obtained in step S14, the lens of the objective lens 54 is adjusted based on the values of the fifth and sixth terms relating to the expansion coefficients C5 and C6, and the as-component of the wavefront aberration is calculated. Is adjusted (step S16). Adjustment of the assembling component is performed in the lens chamber LC1 in the lens barrel MT shown in FIG.
To LC5 to rotate the lenses L11 to L15 around the optical axis. Here, the lens to be rotated may be any of the lenses L11 to L15. After adjusting the ass component by rotating the lens, step S1 is performed.
Similarly to 2, the adjusted wavefront aberration of the objective lens 54 is measured using the interferometer device 70, and each component of the wavefront aberration is extracted (step S18).

When the components of the wavefront aberration remaining in the objective lens 54 after the adjustment are extracted, the ass components represented by the fifth and sixth terms relating to the expansion coefficients C5 and C6 are predetermined among the extracted components. It is determined whether or not it is within the specified standard (step S20). In order for the manufactured objective lens 54 to have a predetermined imaging characteristic, it is required that the component of the wavefront aberration is within a certain standard when the objective lens 54 is manufactured. In step S20, it is determined whether or not the as-component of the wave aberration is within the standard. In step S20, the extracted ass component is displayed on a display or the like.
Although it may be determined whether the worker is within the standard from the marked ass component, the above-mentioned standard value is stored in the interference measuring device 70, and the interference measuring device 70 makes the determination in step S20. It is preferable to do so.

If it is determined in step S20 that the ass component is not within the standard (if the determination result is "NO"), the ass component adjustment in step S16 is performed again. On the other hand, when it is determined in step S20 that the value is within the standard (the determination result is “Y
ES ”), the process proceeds to the step of adjusting the spherical aberration component based on the value of the ninth term relating to the expansion coefficient C9 (step S).
22). The adjustment of the spherical aberration component is performed by changing the thickness of the spacing ring SA shown in FIG. 13 and adjusting the spacing between the lens L13 and the lens L14. In order to adjust the distance between the lens L13 and the lens L14, first, the lens L11 to the lens L13 or the lenses L14 and 15 are pulled out of the lens barrel MT without rotating the lens L13 with respect to the lens barrel MT. The ring SA is replaced with an interval ring SA having a different thickness, and the lens barrel M
Lenses L11 to L13 extracted from T, or
This is performed by incorporating the lenses L14 and L15 into the lens barrel MT again.

Even when the lenses L11 to L13 or the lenses L14 and L15 are incorporated into the lens barrel MT again, the lenses L11 to L13 or the lenses L14 and L15 are not rotated with respect to the lens barrel MT. Incorporate. This is because when the rotation angle between the lenses L11 to L15 changes, the process S1 is performed.
There is a possibility that the ass component performed in step 6 may be out of the standard.
This is because it becomes necessary to perform the operation 16 again. still,
In step S22, in order to adjust the spherical aberration component, the distance between the lens L13 and the lens L14 is adjusted because the wavefront aberration when the distance between the lenses L11 to L15 is varied in advance from the design value This is because the amount of change in the amount is determined by simulation, and the amount of change in the amount of wavefront aberration is sufficient to correct spherical aberration, and there is a resolution (appropriate sensitivity) necessary for adjustment.

After adjusting the distance between the lens L13 and the lens L14, the adjusted wavefront aberration of the objective lens 54 is measured using the interferometer device 70 as in step S12, and each component of the wavefront aberration is extracted. (Step S24). When each component of the wavefront aberration remaining in the adjusted objective lens 54 is extracted, it is determined whether the spherical aberration component represented by the ninth term relating to the expansion coefficient C9 is within a predetermined standard among the extracted components. Is determined (step S26). Here, when it is determined that the spherical aberration component is not within the standard (when the determination result is “NO”), the spherical aberration component adjustment in step S22 is performed again.
That is, the operation of disposing the spacing rings SA having different thicknesses in the lens barrel MT is performed again. On the other hand, when it is determined in step S26 that the value is within the standard (when the determination result is "YES"), the process proceeds to a step of adjusting the coma aberration component (eccentric coma) (step S28).

The adjustment of the coma aberration component is performed by the eccentricity adjusting screw VS.
5 (see FIG. 13) or the like to move (eccentrically) the lens L15 in a direction orthogonal to the optical axis.
After the eccentricity adjustment of the lens L15, the above-described steps S12, S1
8, the wavefront aberration of the objective lens 54 after the adjustment is measured using the interferometer device 70 as in S24, and each component of the wavefront aberration is extracted (step S30). The seventh and eighth terms relating to expansion coefficients C7 and C8 among the components of the wavefront aberration extracted here.
It is determined whether the coma aberration component indicated by the item is within a predetermined standard (step S32). When it is determined that the coma aberration component is not within the standard (when the determination result is “NO”), the coma aberration component adjustment in step S28 is performed again.

On the other hand, if it is determined in step S 32 that the objective lens 54 is within the standard (if the determination result is “YES”), the objective lens 54 that has undergone the above adjustment process using the interference measurement device 70 is used.
Are finally measured, and it is determined whether or not all the aberrations remaining in the objective lens 54 are within the standard (step S).
34). Through the above-described steps S16, S22 and S28, the as-component, spherical aberration component and coma component of the wavefront aberration are adjusted to a predetermined standard.
RMS (root mean squam) taking into account the total wavefront aberration due to the influence of other aberrations (higher order wavefront aberration components) and the like.
In this step S34, it is determined whether or not the re: root mean square and the PV value (peak to valley: difference between maximum and minimum) are equal to or less than a predetermined value. If it is determined in step S34 that it is out of the standard (if the determination result is “NO”),
Performing the above adjustment again, the ass component, the spherical aberration component,
And the coma aberration component is further driven (step S3).
6). On the other hand, if it is determined in step S34 that the data is within the standard, a series of processing ends.

The method for manufacturing the objective optical system according to one embodiment of the present invention has been described above by taking, as an example, the method for manufacturing the objective lens 54 as the objective optical system provided in the alignment sensor 35 forming a part of the observation device. In the present embodiment, as shown in FIG. 12, the residual aberration of the objective lens 54 is adjusted (corrected) by adjusting the astigmatism component, the spherical aberration component, and the coma component of the wavefront aberration in this order. The reason for correcting in this order is that the component adjustment performed later does not significantly affect the deterioration of the component adjusted earlier.

The alignment lens 35 is assembled by incorporating the objective lens manufactured by the above-described manufacturing method into the alignment sensor 35 and further incorporating another optical element for calibrating the alignment sensor 35. The objective lens 54 is manufactured by the manufacturing method described above, and is manufactured so that residual aberration hardly occurs.
When it is necessary to correct (fine-adjust) aberrations caused by component manufacturing errors or assembly errors of other components (36, 53, 55 to 61), for example, the second objective lens 55 or the relay lens 5
Adjustment (correction) is possible by adjusting the arrangement of the engineering members such as 7, 60 and the like.

In the manufacturing method shown in FIG. 12, an ass component, a spherical aberration component and a coma component are extracted based on the measurement result of the interferometer, and the ass component adjustment is performed based on the extracted wavefront aberration components. , Spherical aberration component adjustment, and coma aberration component adjustment. However, regarding the ass component adjustment, the fifth and sixth terms relating to the expansion coefficients C5 and C6
Rather than using only the terms, it is possible to make adjustments using wavefront aberration components including these fifth and sixth terms. For the spherical aberration component adjustment, the expansion coefficient C9
Instead of using only the ninth term, the adjustment can be performed using the wavefront aberration component including the ninth term. Regarding the coma aberration component adjustment, the expansion coefficients C7 and C7
Rather than using only the 7th and 8th terms related to 8,
The adjustment can be performed using the wavefront aberration components including the seventh and eighth terms. Hereinafter, a method for manufacturing an objective optical system according to a modification of the embodiment of the present invention will be described.

[First Modification of Manufacturing Method of Objective Optical System] In the manufacturing method according to the first modification, the objective lens 54 is assembled (corresponding to step S10) as in the embodiment of FIG. Of the transmitted wavefront aberration of step (step S1)
2). Then, based on the measurement result of the measured wavefront aberration, the following wavefront aberration components (all components W,
A rotationally symmetric component Wrot, a non-rotationally symmetric component Wrnd, and a non-rotationally symmetric component Wrndmas after ass correction are extracted (corresponding to step S14). Wrot (ρ, θ) = C9 + C16 + C25 + C36 ... (2) Wodd (ρ, θ) = C7 + C8 + C10 + C11 + C14 + C15 + C19 + C20 + C23 + C24 + C26 + C27 + C30 + C31 + C34 + C35 ... (3) Wevn (ρ, θ) = C5 + C6 + C12 + C13 + C17 + C18 + C21 + C22 + C28 + C29 + C32 + C33 ... (4) all components: W = Wrot + Wodd + Wevn rotationally symmetric element: Wrot (see equation (2)) Non-rotationally symmetric component: Wrnd = Wodd + Wevn Non-rotationally symmetric component after astigmatism correction: Wrndmas = Wrnd−C5
-C6

In the adjustment of the ass component of the objective optical system in the first modification (corresponding to step S16), at least one of the lenses L11 to L15 in FIG. 13 is rotated to adjust the ass component. Next, similarly to step S12, the aberration of the objective lens 54 after the astigmatism adjustment is measured using the interferometer device 70, and each component of the wavefront aberration is extracted (corresponding to step S18). When the components of the wavefront aberration remaining on the objective lens 54 after the adjustment are extracted, the expansion coefficient C
Components containing the fifth and sixth terms relating to 5 and C6 (first
In the modified example, it is determined whether or not all components W or non-rotationally symmetric components Wrnd are within a predetermined standard (step S2).
0). If the value is not within the predetermined standard, the process proceeds to the ass component adjusting step.

The above component W or the non-rotationally symmetric component Wrnd
Is determined to be within the predetermined standard, the process proceeds to a step of adjusting the spherical aberration component based on the wavefront aberration component (rotationally symmetric component Wrot in the first modification) including the ninth term related to the expansion coefficient C9. (Corresponding to step S22). In this step, the spherical aberration component is adjusted by changing the distance between the lenses L13 and L14 in FIG. After this interval adjustment, the adjusted aberration of the objective lens 54 is measured using the interferometer device 70 in the same manner as in step S12, and each component of the wavefront aberration is extracted (corresponding to step S24). Objective lens 5 after adjustment
When the components of the wavefront aberration remaining in 4 are extracted, among the extracted components, the component including the ninth term related to the expansion coefficient C9 (the rotationally symmetric component Wrot in the first modification) falls within a predetermined standard. It is determined whether or not there is (corresponding to step S26). If it is not within the predetermined standard, the process proceeds to the spherical aberration adjustment step.

If it is determined that the rotationally symmetric component Wrot is within the predetermined standard, the wavefront aberration component including the seventh and eighth terms related to the expansion coefficients C7 and C8 (the non-rotationally symmetric component in the first modified example) The process shifts to a step of adjusting the coma aberration component based on Wrnd) (corresponding to step S28). In this step, the coma aberration component is adjusted by decentering the lens L15 in FIG. After this eccentricity adjustment, step S1
The aberration of the objective lens 54 after the adjustment is measured using the interferometer device 70 in the same manner as in step 2, and each component of the wavefront aberration is extracted (corresponding to step S30). When the components of the wavefront aberration remaining on the objective lens 54 after the adjustment are extracted, the components including the seventh and eighth terms related to the expansion coefficients C7 and C8 among the extracted components (the ass correction in the first modified example) Post-rotationally symmetric component W
rndmas) is determined to be within a predetermined standard (corresponding to step S32). If it is not within the predetermined standard, the process proceeds to the above-mentioned coma aberration adjustment process.

When the non-rotationally symmetric component Wrndmas after the astigmatism correction is within the standard, similarly to the step S34 in the embodiment of FIG.
It is determined whether the value is within a predetermined standard. Here, if the value is not within the predetermined standard, the process proceeds to the ass adjusting process. If the value is within the predetermined standard, a series of processing ends. As described above, in the first modified example, the aberration components including the fifth and sixth terms related to the expansion coefficients C5 and C6 are adjusted (mainly), and the terms other than the fifth and sixth terms are also adjusted. Including all components W or non-rotationally symmetric components Wrnd, and adjusting (mainly) the aberration component including the ninth term related to the expansion coefficient C9 to drive in the rotationally symmetric component Wrot including other terms than the ninth term, By adjusting (mainly) aberration components including the seventh and eighth terms related to the expansion coefficients C7 and C8,
Non-rotationally symmetric components after astigmatism correction, including terms other than the seventh and eighth terms, are driven.

[Second Modification of Manufacturing Method of Objective Optical System] In the manufacturing method according to the second modification, in the first modification, the components including the fifth and sixth terms related to the expansion coefficients C5 and C6 As the whole component W or the non-rotationally symmetric component Wrnd
Is used, and instead of using the rotationally symmetric component Wrot as a component including the ninth term related to the expansion coefficient C9, a longitudinal aberration component W longitudinal (W longitudinal = Wrot + Wevn-C5) is used.
−C6), and instead of using the non-rotationally symmetric component Wrndmas after ass correction as a component including the seventh and eighth terms relating to the expansion coefficients C7 and C8, a lateral aberration component W side (W side = W
odd, see equation (3)).

[Third Modification of Manufacturing Method of Objective Optical System] In the manufacturing method according to the third modification, in the manufacturing method according to the first modification, as in the embodiment of FIG. Assembling (corresponding to step S10), and measuring the transmitted wavefront aberration of the objective lens 54 (corresponding to step S12). Then, based on the measurement result of the measured wavefront aberration, the following wavefront aberration components (all components W, astigmatism correction W
Then, mas, ass and presented spherical aberration correction Wmaqssa and ass and low-order coma aberration correction Wmascoma) are extracted (corresponding to step S14). All components: W = Wrot + Wodd + Wevn Asbestos correction: Wmas = W-C5-C6 As and low-order spherical aberration correction: Wmassa = W-C5-C6
-C9 Astigmatism and low-order coma correction: Wmascoma = W-C5-C
6-C7-C8

In the adjustment of the ass component of the objective optical system in the third modification (corresponding to step S16), at least one of the lenses L11 to L15 in FIG. 13 is rotated to adjust the ass component. Next, similarly to step S12, the aberration of the objective lens 54 after the astigmatism adjustment is measured using the interferometer device 70, and each component of the wavefront aberration is extracted (corresponding to step S18). When the components of the wavefront aberration remaining on the objective lens 54 after the adjustment are extracted, the expansion coefficient C
Components containing the fifth and sixth terms relating to C5 and C6 (third component)
In the modified example, it is determined whether or not all components W and astigmatism correction Wmas) are within predetermined standards (corresponding to step S20). As is clear from the above equation, the difference between all the components W and the astigmatism correction Wmas corresponds to the astigmatism amount. If the value is not within the predetermined standard, the process proceeds to the ass component adjusting step.

If it is determined that all the components W and the astigmatism correction Wmas are within the predetermined standard, the wavefront aberration component including the ninth term relating to the expansion coefficient C9 (in the third modification, the astigmatism correction Wma
The process proceeds to the step of adjusting the spherical aberration component based on s and as and the low-order spherical aberration correction Wmassa) (corresponding to step S22). In this step, the spherical aberration component is adjusted by changing the distance between the lenses L13 and L14 in FIG. After this interval adjustment, the adjusted aberration of the objective lens 54 is measured using the interferometer device 70 in the same manner as in step S12, and each component of the wavefront aberration is extracted (corresponding to step S24). When the components of the wavefront aberration remaining on the objective lens 54 after the adjustment are extracted, the expansion coefficient C
It is determined whether or not the components including the ninth term according to No. 9 (the ass correction Wmas and the ass and low-order spherical aberration correction Wmassa in the third modification) are within a predetermined standard (corresponding to step S26). As is apparent from the above equation, the astigmatism correction Wmas and the difference between the astigmatism and the low-order spherical aberration correction Wmassa correspond to the spherical aberration amount. If it is not within the predetermined standard, the process proceeds to the spherical aberration adjustment step.

If it is determined that the astigmatism correction Wmas and the astigmatism and the low-order spherical aberration correction Wmassa are within predetermined standards,
The process proceeds to the step of adjusting the coma aberration component based on the wavefront aberration components including the seventh and eighth terms related to the expansion coefficients C7 and C8 (the astigmatism correction Wmas and the astigmatism and the low-order coma correction Wmascoma in the third modification). (Corresponding to step S28). In this step, the coma aberration component is adjusted by decentering the lens L15 in FIG. After this eccentricity adjustment, similarly to step S12, the adjusted aberration of the objective lens 54 is measured using the interferometer device 70, and each component of the wavefront aberration is extracted (corresponding to step S30). When the components of the wavefront aberration remaining in the adjusted objective lens 54 are extracted, the seventh and eighth terms of the extracted components relating to the expansion coefficients C7 and C8 are extracted.
It is determined whether or not the components including the term (the asth correction Wmas and the asth and low-order coma correction Wmascoma in the third modification) are within a predetermined standard (corresponding to step S32). As is clear from the above equation, the astigmatism correction Wmas and the difference between the astigmatism and the low-order coma correction Wmascoma correspond to the coma aberration amount. If it is not within the predetermined standard, the process proceeds to the above-mentioned coma aberration adjustment process.

If the astigmatism correction Wmas and the astigmatism and the low-order coma correction Wmascoma are within the standard, the RMS and PV values taking into account the total wavefront aberration are set in advance similarly to step S34 in the embodiment of FIG. It is determined whether it is within the specified standard. Here, if the value is not within the predetermined standard, the process proceeds to the ass adjusting process. If the value is within the predetermined standard, a series of processing ends. As described above, in each of the modifications, the adjustment is performed in the order of the astigmatism component, the spherical aberration component, and the coma component of the wavefront aberration, and the adjustment of the component performed later has almost no influence on the deterioration of the component adjusted earlier. There are benefits not given. Next, a method for manufacturing the aberration measuring device 40 that forms a part of the inspection device according to the embodiment of the present invention will be described.

[Method of Manufacturing Inspection Apparatus] FIG. 15 is a flowchart showing a method of manufacturing an inspection apparatus according to one embodiment of the present invention. In the following description, a case where the manufactured objective optical system is the objective optical system including the lenses L31 to L44 shown in FIG. 9 will be described as an example. The manufacturing method described below is a method for manufacturing an inspection apparatus. From a different viewpoint, a collimator lens 42 and relay lenses 43 and 44 as objective optical systems included in the aberration measurement apparatus 40 are used.
Also serves as a manufacturing method.

In manufacturing the aberration measuring device 40 forming a part of the inspection device, the collimator lens 42, the relay lenses 43 and 44, the microphone fly eye 45, and the CCD 46 are incorporated in the aberration measuring device 40, and the aberration measuring device 40 is assembled. Step S40). Incidentally, the collimator lens 42 and the relay lens 43 as the assembled objective optical system,
The position of each lens 44 (position in the direction of the optical axis AX1 and position in a plane orthogonal to the optical axis AX1) can be finely adjusted even after assembly. When the assembling of the aberration measuring apparatus 40 is completed, the density filter 9 and the lemon skin plate 12 (see FIG. 1) are inserted into the optical path and the test reticle, as in the case of performing the self-calibration of the aberration measuring apparatus 40 described above. The TR is placed on the reticle stage 13. The opening tr formed in the test reticle TR by a reticle blind (not shown).
It is set so that the illumination light is illuminated on only 2. When the above setting is completed, the position information of the sign plate 41 in the Z-axis direction, the inclination around the X-axis, and the inclination around the Y-axis are detected using the two-dimensional AF system, and the wafer stage 15 is detected based on the detection result.
Is adjusted in the Z-axis direction and the upper surface of the sign plate 41 is aligned with the image plane of the projection optical system PL.

Next, the wafer stage 15 is driven in the XY plane to move the aberration measuring device 40 into the detection field of view of the alignment sensor 35, and the alignment mark formed on the marking plate 41 using the alignment sensor 35. By measuring the position information 41b, the position of the optical axis AX1 of the aberration measuring device 40 in the XY plane is detected. Thus, the optical axis AX1 of the aberration measurement device 40
When the position information in the XY plane is detected, the main control system 20 moves the wafer stage 15 in the XY plane and places the mark at a position where the image of the opening tr2 is projected via the projection optical system PL. Calibration opening 41 formed in plate 41
Position a. In this state, the illumination optical system (light sources 1 to
By illuminating the opening tr2 formed in the test reticle TR with the illumination light from the bending mirror 11), the opening t that is substantially larger than the calibration opening 41a.
The image of r2 is transmitted via the projection optical system PL to the calibration opening 41a.
Projected onto In the present embodiment, the calibration opening 4 is connected via the projection optical system PL while being attached to the aberration measuring device.
Although the illumination light is supplied to 1a, if the area larger than the calibration opening 41a can be incoherently illuminated, the respective steps shown in FIG. 15 can be executed. Illumination light may be supplied to a region larger than the opening 41a under incoherent illumination. In this case, after the step S40, a step of setting the aberration measuring device assembled in the illumination optical system as a tool may be performed.

The light passing through the calibration opening 41a passes through the collimating lens 42, the relay lenses 43 and 44, and the micro fly's eye 45 provided in the assembled aberration measuring device 40 in this order on the light receiving surface of the CCD 46. A large number of images of the calibration opening 41a are formed at a time. Here, the collimator lens 42 and the relay lens 4 forming the objective optical system
An image is formed in a state in which the center of gravity of the light amount of the image of the calibration opening 41a is displaced from each of the above-mentioned origins due to the aberration remaining in the reference numerals 3 and 44. The wavefront aberration remaining in the assembled aberration measuring device 40 is measured by detecting the amount of displacement (step S42). When the wavefront aberration is measured, a wavefront aberration component is extracted based on the measurement result (step S4).
4). In this step S44, the same processing as step S14 shown in FIG. 12 is performed by the main control system 20 based on the detection result output from the CCD 46. That is, the detection result (measured wavefront aberration) output from the CCD 46 is applied to the Zernike cylindrical function Zn
(Ρ, θ) and the expansion coefficient Cn for each term
Is performed. Note that the determined expansion coefficient Cn
Is displayed on a monitor (not shown).

When each wavefront aberration component is obtained in step S44, it is determined whether the value of the fourth term related to the expansion coefficient C4, that is, whether the focus component is within the standard or not (step S4).
6). The aberration measuring device 40 forms a large number of images of the calibration opening 41 a on the CCD 46 with the micro fly's eye 45. Therefore, if the front focal position of the objective optical system is displaced from the calibration opening 41a, the value of the focus component represented by the fourth term relating to the expansion coefficient C4 becomes large. If the value of the focus component is large, the measurement error of the wavefront aberration increases, and other wavefront aberration components cannot be measured accurately. Therefore, in the present embodiment, the focus component is first adjusted (coarse adjustment). When it is determined in step S46 that the focus component is not within the standard (when the determination result is “NO”), the focus component is adjusted (step S48).
The coarse adjustment of the focus component is performed by adjusting the positive meniscus lens L32 to the biconcave lens L38, which form a part of the collimator lens 42.
Is moved integrally in the direction of the optical axis AX1. After adjusting the focus component in step S48,
Steps S42 and S44 are performed again to drive the focus component so that it falls within a predetermined standard.

On the other hand, if it is determined in step S46 that the focus component is within the standard (if the determination result is "YES"), the values of the fifth and sixth terms relating to the expansion coefficients C5 and C6 are obtained. The as component of the wavefront aberration is adjusted (step S50). To adjust the assembling component, one or more of the positive meniscus lens L33, the biconvex lens L35, the positive meniscus lens L37, the positive meniscus lens L40, the biconcave lens L42, and the biconvex lens L44 shown in FIG. 11 are rotated around the optical axis AX1. This is done by causing After adjusting the ass component by rotating these lenses, step S4 is performed.
2, the wavefront aberration of the aberration measuring device 40 is measured, and each component of the wavefront aberration is extracted (step S52). When the components of the wavefront aberration remaining in the aberration measuring device 40 are extracted, the ass components shown in the fifth and sixth terms relating to the expansion coefficients C5 and C6 among the extracted components are within a predetermined standard. It is determined whether or not it is (step S54).

If it is determined in step S54 that the ass component is not within the standard (if the determination result is "NO"), the ass component adjustment in step S50 is performed again. On the other hand, when it is determined in step S54 that the value is within the standard (when the determination
In the case of “ES”), the process proceeds to the step of adjusting at least one of the focus component and the spherical aberration component represented by the ninth term related to the expansion coefficient C9 based on the value of the fourth term related to the expansion coefficient C4 (step S56). ). In the above-described step S46, when the deviation of the focus component is extremely large, the measurement error of the wavefront aberration becomes large. Therefore, the coarse adjustment of the focus component is performed in advance. Do. In step S56, at least one of the focus component and the spherical aberration component is adjusted. This is the fourth value indicating the focus component.
Cylindrical function system Z4 according to section indicated by 2.rho ² -1, cylindrical function system Z9 according to paragraph 9 showing a spherical aberration component 6Ro ⁴
-6ρ ² +1 and these are the normalized pupil half-pupil ρ
This is because, since it is only a function, adjusting the focus component affects the spherical aberration component, for example.

Here, when the focus component is adjusted, coarse adjustment is performed by integrally moving the positive meniscus lens L32 to the biconcave lens L38 forming a part of the collimator lens 42 in the direction of the optical axis AX1. ,
For fine adjustment, the positive meniscus lens L37 or the biconcave lens L38 is moved in the direction of the optical axis AX1. The lens to be moved when performing the coarse adjustment of the focus component and the lens to be moved when performing the fine adjustment are obtained in advance from design values. To adjust the spherical aberration component, a lens biconvex lens L3 is used.
9, positive meniscus lens L40 and biconcave lens L41
Is moved integrally in the direction of the optical axis AX1. After adjusting at least one of the focus component and the spherical aberration component, the wavefront aberration of the aberration measuring device 40 is measured in the same manner as in step S52, and each component of the wavefront aberration is extracted (step S58). When each component of the wavefront aberration remaining in the aberration measuring device 40 is extracted, the extracted component is represented by the focus component based on the value of the fourth term related to the expansion coefficient C4 and the ninth term related to the expansion coefficient C9. It is determined whether each of the spherical aberration components is within a predetermined standard (step S60).

If it is determined in step S60 that at least one of the focus component and the spherical aberration component is not within the standard (if the determination result is "NO"), the process returns to step S56, and at least one of the focus component and the spherical aberration component is determined. Is adjusted so that both the focus component and the spherical aberration component are within the standard. On the other hand, if it is determined in step S60 that the value is within the standard (if the determination result is “YES”), the process proceeds to the step of adjusting the coma aberration component (eccentric coma) (step S62). For the adjustment of the coma aberration component, the biconcave lens L38 is moved (eccentric) in the direction orthogonal to the optical axis in the case of coarse adjustment, and the positive meniscus lens L40 is decentered in the case of fine adjustment. After adjusting the eccentricity of the biconcave lens L38 or the positive meniscus lens L40, the above-described step S
42, S44, S52, and S58, the aberration measurement device 4
The wavefront aberration of 0 is measured, and each component of the wavefront aberration is extracted (step S64). Of the components of the wavefront aberration extracted here,
It is determined whether or not the coma aberration components shown in the seventh and eighth terms relating to the expansion coefficients C7 and C8 are within a predetermined standard (step S66). When it is determined that the coma aberration component is not within the standard (when the determination result is “NO”), the coma aberration component adjustment in step S62 is performed again.

On the other hand, if it is determined in step S66 that the value is within the standard (if the determination result is “YES”), the aberration of the aberration measuring device 40 is finally measured, and all the aberrations remaining in the aberration measuring device 40 are measured. It is determined whether it is within the standard (step S68). Steps S48, S50, S56, S6 described above
2, the focus component, astigmatism component, spherical aberration component, and coma aberration component of the wavefront aberration are adjusted within a predetermined standard, but other aberrations including these (high-order wavefront aberration component ), It is determined in this step S68 whether the RMS or PV value taking into account the total wavefront aberration is equal to or less than a predetermined value. When it is determined in step S68 that the value is out of the standard (when the determination result is “NO”), the above-described adjustment is performed again to further drive the astigmatism component, the spherical aberration component, and the coma aberration component (step S70). ). On the other hand, if it is determined in step S68 that the data is within the standard, a series of processing ends. In the above embodiment, the collimator lens 42 and the relay lenses 43 and 4 as the objective optical system included in the aberration measuring device 40 are provided.
4 may be manufactured by the manufacturing method described with reference to FIG. 12, and then the manufacturing method illustrated in FIG. 15 may be applied. The first to third modifications are applied to the steps of adjusting the astigmatic component (S50 to S54), adjusting the spherical aberration component (S56 to S60), and adjusting the coma aberration component (S62 to S66) in the embodiment of FIG. May be applied.

The method of manufacturing the inspection apparatus according to one embodiment of the present invention has been described above with reference to an example of the method of manufacturing the aberration measurement apparatus 40. Also in the present embodiment, the residual aberration of the aberration measuring device 40 is adjusted (corrected) by adjusting the astigmatism component of the wavefront aberration, the spherical aberration component, and the coma aberration component in the same manner as in the above-described manufacturing method of the observation device. However, the correction is performed in this order because the component adjustment performed later does not significantly affect the deterioration of the component adjusted earlier. Through the above steps, the inspection device of the present embodiment is manufactured. As described above, in the method of manufacturing the inspection apparatus according to the present embodiment, the aberration measurement apparatus 40 is manufactured using the self-calibration of the aberration measurement apparatus 40 that forms a part of the inspection apparatus. The fact that the aberration measuring device 40 is manufactured using self-calibration at the time of manufacture does not mean that self-calibration is not necessary after manufacture, and that projection optical system is not affected even if environmental changes such as atmospheric pressure and temperature occur. Self-calibration is used to form the residual aberration of the system PL with high accuracy.

The exposure apparatus according to one embodiment of the present invention (FIG. 1) can control the position of the wafer W at high speed with high accuracy, and can perform exposure with high exposure accuracy while improving throughput. The illumination optical system (light source 1 to bending mirror 11) includes a reticle stage 13, a reticle alignment system including a moving mirror (not shown) and an interferometer 5, a wafer holder 14, a wafer stage 15, a moving mirror 16, a stage driving system 18, and A wafer alignment system including the interferometer 19, a projection optical system PL, and an alignment sensor 35 forming a part of an observation device manufactured by the above-described manufacturing method;
After the components shown in FIG. 1 such as the aberration measuring device 40 forming a part of the inspection device are electrically, mechanically or optically connected and assembled, comprehensive adjustment (electric adjustment, operation check, etc.) ). Here, at the time of the comprehensive adjustment, the adjustment shown in the above-described method of manufacturing the inspection apparatus is performed. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

Next, an embodiment of a method for manufacturing a micro device using an exposure apparatus according to an embodiment of the present invention in a lithography process will be described. FIG. 16 is a diagram showing a flowchart of a manufacturing example of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin-film magnetic head, a micromachine, etc.). As shown in FIG. 16, first, in step S80 (design step), a function / performance design of the micro device (for example, a circuit design of a semiconductor device) is performed, and a pattern design for realizing the function is performed. Subsequently, step S81
In a (mask manufacturing step), a mask (reticle) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S82 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

Next, in step S83 (wafer processing step), using the mask and the wafer prepared in steps S80 to S82, an actual circuit or the like is formed on the wafer by lithography or the like, as described later. . Next, in step S84 (device assembly step), device assembly is performed using the wafer processed in step S83. Step S84 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary.
Finally, in step S85 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S84 are performed. After these steps, the microdevice is completed and shipped.

FIG. 17 is a diagram showing an example of a detailed flow of step S83 in FIG. 16 in the case of a semiconductor device. In FIG. 17, in step S91 (oxidation step), the surface of the wafer is oxidized. In step S92 (CVD step), an insulating film is formed on the wafer surface. Step S93 (electrode forming step)
In, electrodes are formed on a wafer by vapor deposition. In step S94 (ion implantation step), ions are implanted into the wafer. Each of the above steps S91 to S94 constitutes a pre-processing step of each stage of wafer processing, and is selected and executed according to a necessary process in each stage.

In each stage of the wafer process, when the above-mentioned pre-processing step is completed, the post-processing step is executed as follows. In this post-processing step, first, in step S
At 95 (resist forming step), a photosensitive agent is applied to the wafer. Subsequently, in step S96 (exposure step), the circuit pattern of the mask is transferred to the wafer by the lithography system (exposure apparatus) and the exposure method described above. Next, in Step S97 (developing step), the exposed wafer is developed, and Step S97 is performed.
At 98 (etching step), the exposed members other than the portion where the resist remains are removed by etching. Then, in step S99 (resist removing step), unnecessary resist after etching is removed. By repeating these pre-processing and post-processing steps, multiple circuit patterns are formed on the wafer.

[0099] Although one embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment, and can be freely modified within the scope of the present invention. For example, in the above embodiment, the step-and-repeat type exposure apparatus has been described as an example, but the present invention is also applicable to a step-and-scan type exposure apparatus. Further, the light source of the illumination optical system of the exposure apparatus of the present embodiment has been described by taking as an example an excimer laser light source that supplies light having a wavelength of 248 nm (KrF) or 193 nm (ArF), but is not limited thereto. g-line emitted from a high pressure mercury lamp (436 nm) and i-line (365 nm), etc., F ₂ laser (157 nm) laser light emitted from, it is possible to use a charged particle beam such as X-rays or electron beams. For example, when an electron beam is used, a thermionic emission type lanthanum hexaborite (LaB ₆ ) or tantalum (Ta) can be used as an electron gun. Further, in the above-described embodiment, the case of manufacturing a semiconductor element has been described as an example. However, of course, not only an exposure apparatus used for manufacturing a semiconductor element but also a display including a liquid crystal display element can be used. Exposure devices that transfer device patterns onto a glass substrate and are used in the manufacture of thin-film magnetic heads to transfer device patterns onto ceramic wafers, and exposure devices that are used in the manufacture of imaging devices such as CCDs The present invention can also be applied to the present invention.

In the above-described embodiment, when the aberration measuring device 40 is manufactured and when self-calibration is performed, the image of the opening tr2 formed on the test reticle TR via the projection optical system PL is calibrated. Opening 4
Although the case of projecting on 1a is described as an example, it is not always necessary to use the projection optical system PL. For example, the calibration opening 41a may be illuminated using an illumination device having a numerical aperture substantially equal to the numerical aperture on the image plane side of the projection optical system PL. Further, in the above-described embodiment, an example in which the present invention is applied to an observation device mounted on an exposure apparatus has been described.
No. 730, Japanese Unexamined Patent Application Publication No. 7-71918, Japanese Unexamined Patent Application Publication No. 10-122814, Japanese Unexamined Patent Application Publication No. The present invention can also be applied to an observation device mounted on a position detection device such as a measurement device.

In addition to a micro device such as a semiconductor device, a reticle or a mask used in an optical exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, or the like is manufactured using a mother reticle. The present invention is also applicable to an exposure apparatus that transfers a circuit pattern to a glass substrate, a silicon wafer, or the like. Here, in an exposure apparatus using DUV (deep ultraviolet) or VUV (vacuum ultraviolet) light, a transmission reticle is generally used, and as a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride, quartz, or the like is used. In a proximity type X-ray exposure apparatus, electron beam exposure apparatus, or the like, a transmission mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate. Incidentally, such an exposure apparatus is described in WO99 /
No. 34255, WO99 / 50712, WO99 / 6
No. 6370, JP-A-11-194479, JP-A-2000-12453
And JP-A-2000-29202.

[0102]

As described above, according to the present invention, in manufacturing the objective optical system, the wavefront aberration remaining in the objective optical system is obtained for each component, and the astigmatism component, the spherical aberration component,
The wavefront aberration remaining in the objective optical system is corrected for each component in the order of the coma aberration components. Here, the astigmatism component, the spherical aberration component, and the coma aberration component are corrected in this order because the component adjustment performed later does not significantly affect the deterioration of the component adjusted first. Therefore, according to the present invention, there is an effect that an objective optical system in which aberration is corrected as much as possible can be efficiently manufactured. According to the present invention, the aberration remaining in the inspection apparatus itself that measures the wavefront aberration of the optical system to be measured is measured by the inspection apparatus itself, and the wavefront aberration remaining in the inspection apparatus is corrected for each component of the wavefront aberration. Inspection equipment is manufactured by using this method, so that it is possible to manufacture an inspection equipment with extremely small residual aberration, and as a result, high detection accuracy without substantially affecting aberration measurement results of the optical system to be inspected. There is an effect that an inspection device having the above can be manufactured. Here, in correcting the wavefront aberration remaining in the objective optical system, an assembling component, a spherical aberration component, and a coma aberration component are set such that a component adjustment performed later does not significantly affect the deterioration of the component that has been adjusted earlier. In this order, the wavefront aberration remaining in the objective optical system is corrected for each component, so that an inspection apparatus in which the aberration is corrected as much as possible can be manufactured efficiently. Further, according to the present invention, since the objective optical system in which the aberration is corrected as much as possible is provided, the residual aberration of the inspection apparatus itself is small, and as a result, the residual aberration of the test optical system can be detected with high detection accuracy. There is an effect that can be. Further, according to the present invention, since the aberration remaining in the inspection apparatus is extremely small, there is an effect that an object image can be detected with high detection accuracy.

[Brief description of the drawings]

FIG. 1 is a diagram showing a schematic configuration of a main part of an exposure apparatus according to an embodiment of the present invention including an inspection apparatus and an observation apparatus according to the embodiment of the present invention.

FIG. 2 is a diagram showing a configuration of an alignment sensor 35 forming a part of an observation device according to an embodiment of the present invention.

FIG. 3 is a diagram illustrating a configuration of an objective lens according to a first example provided in an alignment sensor forming a part of an observation device according to an embodiment of the present invention;

FIG. 4 is a diagram showing a configuration of an objective lens according to a second example provided in the alignment sensor forming a part of the observation device according to the embodiment of the present invention;

FIG. 5 is a diagram schematically illustrating a main configuration of a wavefront measuring device 40 illustrated in FIG. 1;

FIG. 6 is a top view of the test reticle TR.

7 is a top view of the marking plate 41. FIG.

8 is a front view of the micro fly's eye 45. FIG.

FIG. 9 is a diagram showing a configuration of a collimator lens and relay lenses 43 and 44 according to a first example provided in an aberration measuring device 40 which is a part of an inspection device according to an embodiment of the present invention.

FIG. 10 is a diagram showing a configuration of a collimating lens and relay lenses 43 and 44 according to a second example provided in an aberration measuring device 40 that is a part of an inspection device according to an embodiment of the present invention.

FIG. 11 shows each micro lens 4 of the micro fly's eye 45.
It is a figure showing signs that many independent imaging optical systems exist for every 5a.

FIG. 12 is a flowchart illustrating a method of manufacturing an objective optical system according to an embodiment of the present invention.

13 is a sectional view of the assembled objective lens 54. FIG.

FIG. 14 is a diagram showing a schematic configuration of an interferometer device used when measuring the wavefront aberration of the objective lens in step S12.

FIG. 15 is a flowchart illustrating a method of manufacturing an inspection device according to an embodiment of the present invention.

FIG. 16 is a flowchart illustrating an example of a micro device manufacturing process.

FIG. 17 is a diagram showing an example of a detailed flow of step S83 in FIG. 18 in the case of a semiconductor device.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 light source (illumination unit) 2 beam shaping optical system (illumination unit) 3 interference reducing unit (illumination unit) 4 first fly-eye lens (illumination unit) 5 vibrating mirror (illumination unit) 6 relay optical system (illumination unit) 7 Second fly-eye lens (illumination unit) 8 aperture stop (illumination unit) 9 density filter (illumination unit) 10 condenser optical system (illumination unit) 11 bending mirror (illumination unit) 15 wafer stage (positioning unit) 18 stage drive system (Positioning unit) 20 Main control system (Position information calculating unit, Positioning unit) 35 Alignment sensor (Observation device) 36 Reflection prism (Imaging optical system) 40 Aberration measurement device (Inspection device) 41 Marking plate (Reference member) 41a Calibration opening 42 Collimating lens (objective optical system) 43, 4 Reference Signs List 4 relay lens (objective optical system) 45 micro fly's eye (wavefront splitting element) 46 CCD (photoelectric detector) 53 half prism (imaging optical system) 54 objective lens (objective optical system) 55 second objective lens (imaging optical system) 56) Index plate (imaging optical system) 57 Relay lens (imaging optical system) 59 Imaging aperture stop (imaging optical system) 60 Relay lens (imaging optical system) 61 XY branch half prism (imaging optical system) ) DP pattern (circuit pattern) PL Projection optical system (optical system to be inspected) R Reticle (mask) tr1, tr2 Opening W Wafer (substrate) WM Wafer mark (mark)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification FI FI Theme Court ゛ (Reference) G03F 7/20 521 G03F 7/20 521 H01L 21/027 H01L 21/30 516A (72) Inventor Ayako Nakamura Tokyo 3-2-3 Marunouchi, Chiyoda-ku Nikon Corporation F-term (reference) 2F065 AA04 CC19 DD10 FF44 GG24 HH06 HH12 JJ26 LL01 LL10 LL25 LL30 LL49 PP12 UU01 UU02 UU07 2G086 HH06 2H04LA2513 PA16 PA17 PB10 PB13 QA02 QA06 QA07 QA12 QA14 QA21 QA22 QA25 QA26 QA34 QA41 QA42 QA45 QA46 RA41 UA03 UA04 5F046 BA04 DA13

Claims (25)

[Claims] 1. An assembling step of assembling an objective optical system, a measuring step of measuring a wavefront aberration of the assembled objective optical system, and a first step of correcting an ass component of the aberration of the objective optical system.
A correction step, which is performed after the first correction step, and corrects a spherical aberration component of aberrations of the objective optical system; and a second correction step, which is performed after the second correction step, wherein A third correction step of correcting a coma aberration component of system aberrations. 2. The method according to claim 1, further comprising, between the first correction step and the second correction step, a fourth step of correcting a focus component of aberration generated in the objective optical system. Manufacturing method of objective optical system. 3. The method according to claim 1, further comprising, after each of the first to fourth correction steps, determining whether the corrected component is equal to or less than a predetermined value. 3. The method for manufacturing the objective optical system according to 2. 4. The method according to claim 1, further comprising, after the measuring step, a focus component adjusting step of adjusting a focus component of aberration generated in the objective optical system to a predetermined value or less based on a measurement result of the measuring step. The method for manufacturing an objective optical system according to claim 1. 5. The apparatus according to claim 1, further comprising a determining step of determining whether an aberration remaining in the objective optical system after the correcting step is equal to or less than a predetermined value.
The method for manufacturing an objective optical system according to any one of the above items. 6. The aberration component of the aberration of the objective optical system is corrected based on expansion coefficients including the expansion coefficients of the fifth and sixth terms, when the wavefront aberration is represented by a Zernike polynomial. The method for manufacturing an objective optical system according to any one of claims 1 to 5, wherein 7. The spherical aberration component of the aberration of the objective optical system, wherein the wavefront aberration is represented by a Zernike polynomial, and is corrected based on a development coefficient including a ninth expansion coefficient. The method for manufacturing an objective optical system according to any one of claims 1 to 6. 8. The coma component of the aberration of the objective optical system, when the wavefront aberration is represented by a Zernike polynomial, is corrected based on expansion coefficients including expansion coefficients of the seventh and eighth terms. The method for manufacturing an objective optical system according to any one of claims 1 to 7, wherein 9. The objective lens according to claim 2, wherein the focus component of the aberration of the objective optical system is corrected based on an expansion coefficient of a fourth term when the wavefront aberration is represented by a Zernike polynomial. 6. The method for manufacturing the objective optical system according to any one of items 5 to 5. 10. A method for manufacturing an inspection apparatus for measuring a wavefront aberration of an optical system to be tested by receiving light from the optical system to be tested through an objective optical system, the method comprising: Arranging a wavefront splitting element for wavefront splitting the transmitted light, and a photoelectric detection unit for photoelectrically detecting the light split by the wavefront splitting element at a predetermined position; A measurement step of obtaining a detection result from the photoelectric detection unit by supplying the measurement result, and measuring a wavefront aberration generated in the inspection apparatus based on the detection result; and performing the inspection based on the wavefront aberration measured in the measurement step. Correcting the aberration remaining in the apparatus for each component of the wavefront aberration. 11. The objective optical system includes a reference member having a calibration opening formed therein, and in the measuring step, a detection result is obtained based on light passing through the calibration opening. A method for manufacturing an inspection apparatus according to claim 10. 12. The correction step includes: a first correction step of correcting an astigmatic component of aberration generated in the objective optical system; a second correction step of correcting a spherical aberration component of aberration generated in the objective optical system; The method according to claim 10 or 11, further comprising: a third correction step of correcting a coma component of aberration generated in the objective optical system. 13. The second correction step is performed after the first correction step, and is performed between the first and second correction steps to correct a focus component of aberration generated in the objective optical system. The method according to claim 12, further comprising a fourth correction step. 14. The method according to claim 12, further comprising a step of determining whether or not the corrected component is equal to or less than a predetermined value after each of the first to fourth correction steps. 14. A method for manufacturing an inspection device according to item 13. 15. A focus component adjusting step for adjusting a focus component of aberration generated in the objective optical system to a predetermined value or less based on a measurement result of the measuring step after the measuring step. A method for manufacturing an inspection device according to any one of claims 11 to 14. 16. The apparatus according to claim 11, further comprising a judging step of judging whether or not the aberration remaining in the objective optical system after the correcting step is equal to or smaller than a predetermined value. A method for manufacturing an inspection device according to claim 1. 17. The ass component of the aberration of the objective optical system is:
17. The wavefront aberration is corrected based on expansion coefficients including expansion coefficients of the fifth and sixth terms when the wavefront aberration is represented by a Zernike polynomial. Of manufacturing inspection equipment. 18. The system according to claim 12, wherein the spherical aberration component of the objective optical system is corrected based on a development coefficient including a ninth expansion coefficient when the wavefront aberration is represented by a Zernike polynomial. A method for manufacturing an inspection device according to any one of claims 1 to 17. 19. The coma aberration component of the objective optical system is corrected based on expansion coefficients including expansion coefficients of the seventh and eighth terms when the wavefront aberration is represented by a Zernike polynomial. The method of manufacturing an inspection device according to claim 12, wherein 20. The apparatus according to claim 13, wherein a focus component of the aberration of the objective optical system is corrected based on an expansion coefficient of a fourth term when the wavefront aberration is represented by a Zernike polynomial. A method for manufacturing the inspection apparatus according to any one of the sixteenth aspects. 21. An inspection apparatus for measuring a wavefront aberration of a test optical system, comprising: an illumination unit for illuminating an opening positioned on an object plane of the test optical system; An objective optical system manufactured by the objective optical system manufacturing method according to any one of claims 1 to 9, for condensing light from an image of the opening formed on an image plane. A wavefront splitting element that forms a plurality of spot images by wavefront splitting the light passing through the objective optical system, and a photoelectric detection unit that photoelectrically detects the plurality of spot images formed via the wavefront splitting element. An inspection apparatus comprising: 22. An imaging optical system including the objective optical system manufactured by the method for manufacturing an objective optical system according to claim 1 and provided via the imaging optical system. An observation apparatus characterized by observing a formed object image. 23. An exposure apparatus for transferring an image of a pattern formed on a mask onto a substrate via a projection optical system, according to the method of manufacturing an inspection apparatus according to any one of claims 10 to 20, Inspection device manufactured or claim 2
An exposure apparatus comprising: the inspection apparatus according to claim 1, wherein the inspection apparatus uses the projection optical system as the optical system to be measured to measure a wavefront aberration. 24. An exposure apparatus for transferring a predetermined pattern onto a substrate, wherein the observation apparatus according to claim 22 is for observing a mark formed on said substrate, and An exposure apparatus comprising: a position information calculating unit that obtains position information of a mark; and a position adjusting unit that positions the substrate based on a calculation result of the position information calculating unit. 25. An exposure step of exposing the pattern on the substrate using the exposure apparatus according to claim 23, and a developing step of developing the substrate exposed in the exposure step. A method for manufacturing a micro device, comprising: