JP2002192459A - Polishing device, semiconductor device manufacturing method using the same, and semiconductor device manufactured by the method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To set moment acting on a holding member by frictional force between a wafer and an abrasive pad to a desirable value when the surface of the wafer is polished with the abrasive pad. SOLUTION: A polishing device CMP comprises the wafer holder 12 for holding the wafer W, and the abrasive pad 2, and polishes a polished surface of the wafer W by pressing the abrasive pad 2 against the wafer W held by the wafer holder 12 and at the same time rotatively moving them both. In the polishing device, the wafer holder 12 is supported for oscillation on a rotary shaft 11 via an oscillating support mechanism 20, and the center of oscillation of the wafer holder 12 supported by the oscillating support mechanism 20 is settable in an arbitrary position on the polished surface side apart down from the oscillating support mechanism 20.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor device (semiconductor wafer), and more particularly to a polishing apparatus which is implemented in a process for manufacturing a semiconductor device and is suitable for flattening and polishing a semiconductor wafer. The present invention further relates to a semiconductor device manufacturing method using the polishing apparatus and a semiconductor device manufactured by the method.

[0002]

2. Description of the Related Art A polishing apparatus for flattening and polishing a semiconductor wafer is conventionally known. As a conventional polishing device,
For example, as disclosed in JP-A-6-155286 and U.S. Pat. No. 5,830,045, a polishing pad member supported on a spindle shaft is used, and an abrasive material is provided on the pad surface (polishing surface). There is a polishing apparatus that presses a semiconductor wafer held by a chuck from above while supplying slurry, and rotates the pad and the wafer in the same direction or the opposite direction to polish the wafer (CMP polishing).

FIG. 1 shows a configuration example of such a conventional polishing apparatus.
0 schematically. The polishing apparatus 100 includes a polishing pad 102 mounted on an upper surface of a platen 101.
And a polishing head 110. The polishing head 110 is provided with a rotating shaft 111 that extends vertically and is rotated by a rotation driving mechanism (not shown).
A head member 116 is slidably supported by the rotation shaft 111 via a swaying support mechanism 115, and the lower surface of the head member 116 holds the wafer W by suction. The polishing head 110 holds the polishing pad 10 on the platen 101 while holding the wafer W by suction.
The wafer W is pressed while being positioned perpendicular to the wafer 2.

Here, the swing support mechanism 115 includes a first swing member 112 coupled to a lower end of the rotating shaft 111,
Second swing member 11 coupled to the upper end of head member 116
4 and a ball member 113 sandwiched between the first and second swing members 112 and 114, and the second swing member 114 can swing with respect to the first swing member 112. I have. However, although not shown, the rotation of the rotary shaft 111 is directly transmitted to the head member 1 via the swing support mechanism 115.
16.

When the wafer W held by the polishing head 110 is pressed against the polishing pad 102 as described above, the wafer W is automatically aligned by the swing support mechanism 115.
Is pressed evenly against the polishing pad 102. The polishing of the wafer W is performed in such a manner that the entire lower surface of the wafer W is pressed against the polishing pad 102 in this manner.
While supplying the slurry onto the platen 2, the platen 101 is rotated, and the rotating shaft 111 is
The rotation is performed in the same direction or the opposite direction as in step 1. Thus, the lower surface of the wafer W is polished by the polishing action of the slurry.

[0006]

FIG. 10 shows a state in which the polishing is performed in this manner.
The platen 101 is rotated in the direction of arrow B while 10 is rotated in the direction of arrow A. At this time, the head member 116 holding the wafer W by suction is pulled in the direction of the arrow B around the swing center of the swing support mechanism 115 due to the frictional force F acting on the contact portion between the lower surface of the wafer W and the polishing pad 102. The moment M acts, and the lower part is moved rightward as shown in the figure (the inclination of the head member 116 is exaggerated in FIG. 10 for ease of explanation). As a result of the action of such a moment, the contact pressure distribution between the lower surface of the wafer W and the pad member 102 becomes non-uniform, and the amount of polishing on the lower surface of the wafer W becomes non-uniform, making it difficult to perform good polishing. There is.

[0007] In particular, when the head member 116 is tilted as shown in the figure, the lower right end of the head member 116 rises upward, and a gap is easily generated between this portion and the surface of the polishing pad 102. When such a gap is generated, there is a problem that the wafer W may be pulled out by the frictional force F and come off.

The present invention has been made in view of such a problem.
An object of the present invention is to provide a polishing apparatus having a configuration in which when a surface of a wafer is pressed against a polishing pad and polished, a moment acting on a holding member holding the wafer can be set to a desired value due to a frictional force between the two. And

In particular, the present invention makes this moment almost zero, applies a moment opposite to the moment shown in FIG. 10, makes the surface pressure distribution on the polished surface non-uniform due to the frictional force, and reduces the It is an object of the present invention to provide a polishing apparatus having a configuration capable of reliably preventing the outside from being pulled out.

Another object of the present invention is to provide a method of manufacturing a semiconductor device using such a polishing apparatus and a semiconductor device manufactured by the method.

[0011]

To achieve the above object, a polishing apparatus according to the present invention comprises an object holding device for holding an object to be polished, and a polishing pad member for polishing the object to be polished. The polishing apparatus is configured to relatively move the object holding device and the polishing pad member while bringing the polishing pad member into contact with the object to be polished held by the object holding device, thereby polishing the polished surface of the object to be polished. In this polishing apparatus, the object holding device is swingably supported by a supporting member via a swing support mechanism, and the center of swing of the object holding device supported by the swing support mechanism is swung. It is set on the side to be polished away from the dynamic support mechanism.

According to the polishing apparatus having such a configuration, the center of the swing of the object holding device supported by the swing support mechanism is set on the side to be polished away from the swing support mechanism. For example, it is preferable that the center of the swing be set close to or substantially flush with the surface to be polished of the object to be polished held by the object holding device. The moment based on the frictional force generated when the surface relatively moves while contacting the surface can be reduced or almost zero. This allows
Good polishing can be performed by keeping the contact pressure between the surface to be polished and the polishing surface of the polishing pad member uniform.

Further, the swing center may be set so as to be located on the side opposite to the object holding device with respect to the surface to be polished of the object held by the object holding device. In this case, That is, when the swing center is set to be lower than the lower surface of the wafer W in FIG. 10, the swing center is subjected to the frictional force generated at the contact portion between the polished surface and the polished surface.
A moment in the direction opposite to the case of zero acts on the object holding device. Therefore, the head member 116 in FIG.
Is pressed against the polishing pad 102, so that the problem that the wafer W (polishing target) held by the head member 116 (target holding device) is pulled out is eliminated.

In the polishing apparatus according to the present invention, the swing support mechanism includes a swing base member coupled to an end of the support member and a first in-plane including a support center axis of the support member. And a first swing member swingably connected to the swing base member, and a first swing member in a second plane orthogonal to the first plane.
A second swing member slidably connected to the swing member may be provided. In this case, the object holding device is attached to the second swing member, and the first swing center axis serving as the swing center of the first swing member and the second swing center axis serving as the swing center of the second swing member. The swing center axis is set on the side to be polished away from the swing support mechanism.

More specifically, in this polishing apparatus,
For example, as in a configuration according to an embodiment shown in FIGS. 1 to 3 described later, along a first guide portion in an arc shape between first side surfaces of the swing base member and the first swing member opposed to each other. A first guide device for performing relative movement is provided, and the first swing member is swingable about the arc center of the first guide portion with respect to the swing base member using the first guide device as the first swing center axis. And a relative movement along the arc-shaped second guide portion is performed between the second side surfaces of the first swinging member and the second swinging member that face each other and are orthogonal to the first side surface. A second guide device, and the second guide device
The swing member may be configured to be swingable about the arc center of the second guide portion with respect to the first swing member with the second swing center axis.

In the above-mentioned polishing apparatus, the lower surface of the swing base member and the upper surface of the first swing member face each other and face upward, for example, as in an embodiment shown in FIGS. A first guide device which is formed in a convex first cylindrical surface shape and performs relative movement along the first cylindrical surface between a lower surface of the swing base member and an upper surface of the first swing member; The first swinging member can swing the first swinging member relative to the swinging base member using the center axis of the first cylindrical surface as the first swinging center axis, and further, the lower surface of the first swinging member. And the upper surface of the second swinging member is formed in a second cylindrical surface shape facing each other and convex upward, the first cylindrical surface and the second cylindrical surface extend in directions orthogonal to each other, and A second guide device for causing relative movement along a second cylindrical surface between a lower surface of the swing member and an upper surface of the second swing member; Comprising a second by the second guide device
The swing member may be configured to be swingable with respect to the first swing member with the center axis of the second cylindrical surface as the second swing center axis.

In the polishing apparatus having the above-described structure, the support member is driven to rotate about the center axis of the support, and the object holding device is rotated by the support member via the swing support mechanism. It is preferable to be configured to be driven to rotate.

An object to be polished by the polishing apparatus configured as described above is a semiconductor wafer, and the method of manufacturing a semiconductor device according to the present invention uses a semiconductor device using the polishing apparatus according to the present invention configured as described above. A step of flattening the surface of the wafer.

The semiconductor device according to the present invention is manufactured by the semiconductor device manufacturing method according to the present invention.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a configuration of a main part of a CMP polishing apparatus according to a first embodiment of the present invention. This CMP polishing apparatus includes a polishing pad 2 mounted on an upper surface of a platen 1 supported on a platen drive shaft 3.
And a polishing head 10 for holding a wafer W (object to be polished) at the lower end.

The platen 1 is formed in a disk shape, and is driven to rotate at a predetermined speed by a platen drive shaft 3. The polishing pad 2 is made of a hard foamed urethane sheet, a polyester fiber non-woven fabric, a felt, a polyvinyl alcohol fiber non-woven fabric, a nylon fiber non-woven fabric, or a foamed urethane resin solution cast on these non-woven fabrics and then foamed and cured. And is adhered to the upper surface of the platen 1.

The polishing head 10 has a hollow rotary shaft 11 that is driven to rotate by a rotary drive mechanism (not shown), and its rotation axis AX1 extends vertically. A swing support mechanism 20 is attached to a mounting flange 11a formed at the lower end of the rotary shaft 11 by bolt connection, and a wafer holding device 12 is mounted on a lower surface of the swing support mechanism 20.
Is attached by bolt connection. The wafer holding device 12 is configured such that a second wafer holding member 14 is coupled to a lower surface of a first wafer holding member 13, and a reduced pressure space 15 is formed between the two holding members 13 and 14. Also, the first wafer holding member 13
A ring-shaped retainer member 16 extending downward is attached to the outer peripheral portion of the base member by bolting.

A communication hole 13a penetrating vertically is formed in the center of the first wafer holding member 13. This communication hole 13
a, a flexible hose 17 disposed in the hollow space of the rotary shaft 11 is connected to the hose 17.
Is connected to a decompression device (not shown). For this reason, hose 1
The pressure in the decompression space 15 can be reduced through the communication hole 7 and the communication hole 13a. On the other hand, a large number of small holes 14a penetrating vertically are formed in the second wafer holding member 14, and the negative pressure in the decompression space 15 generated by decompression as described above is generated through these small holes 14a. 2 Acts on the lower surface of the wafer holding member 14. As a result, the wafer W can be suction-held on the lower surface of the second wafer holding member 14 as illustrated. In addition, the retainer member 16 surrounds the periphery of the wafer W thus sucked and held, and prevents the wafer W from coming off.

Here, the swing supporting mechanism 20 is configured to swingably support the wafer holding device 12 with respect to the rotating shaft 11, and the swing supporting mechanism 20 will be described with reference to FIG. I do.

The swing support mechanism 20 includes a rectangular swing base member 21 bolted to a mounting flange 11a at the lower end of the rotary shaft 11, and a first rectangular swing frame member surrounding the swing base member 21. It comprises a member 25 and a second swing member 31 having a rectangular frame shape surrounding the first swing member 25. Then, the first wafer holding member 13 is provided on the lower surface of the second swinging member 31.
Are bolted together.

A pair of base member outer surfaces 22, 22 extending in parallel with the rotation axis AX1 and in parallel with each other are formed at positions opposing the rotation axis AX1 in the swing base member 21. In addition, the first swing member 25 includes the base member outer surface 2.
A pair of first swinging member inner side surfaces 26, 26 are formed opposite to each other and extend in parallel with each other at a predetermined interval. Further, as shown in FIG. 3, an arc-shaped first bearing groove 23 is formed on the base member outer side surfaces 22, 22, and the first bearing member inner side surfaces 26, 26 also have first bearing grooves 23, respectively. A first bearing groove 27 having a symmetric shape facing the groove 23 is formed.

Base member outer surface 22 and first rocking member inner surface 2
6, a plurality of balls 24a are attached to the retainer plate 2
A first bearing 24 configured to be held by 4b is provided. The plurality of balls 24a held by the retainer plate 24b are arranged along an arc having the same diameter as the first bearing grooves 23 and 27. For this reason, the first bearing 24 is formed such that the ball 24a is in the first bearing groove 23,2.
7 is sandwiched between the outer surface 22 of the base member and the inner surface 26 of the first swinging member while being inserted into the inside 7. As a result, the first swing member 25 can swing with respect to the swing base member 21 about the first swing center axis S1 which forms the arc center of the first bearing grooves 23 and 27. This swing center axis S1 is shown in FIG.
As shown in the figure, the axis S1 extends perpendicularly to the plane of the drawing through the point O1 on the rotation axis AX1, and the first bearing grooves 23, 2
7 at the center of the arc (radius R).

Further, a pair of first rocking member material outer surfaces 2 extending parallel to and parallel to the rotation axis AX1 are provided at positions opposing the rotation axis AX1 in the first rocking member 25.
8, 28 are formed. This first rocking member outer surface 2
8 and 28 are formed at positions orthogonal to the base member outer side surfaces 22 and 22 and the first rocking member inner side surfaces 26 and 26.
In addition, the second swinging member 31 has the first swinging member outer surface 28,
A pair of second rocking member inner surfaces 32, 32 are formed opposite to and extending in parallel with each other at a predetermined interval. An arc-shaped second bearing groove 29 having the same shape as the first bearing groove 23 shown in FIG. 3 is formed on the first rocking member outer side surfaces 28, 28, and the second rocking member inner side surface is formed. A second bearing groove 33 having a symmetrical shape facing the second bearing groove 29 is formed in each of the second bearing grooves 32.

Also in this case, a plurality of balls 30a are provided between the outer surface 28 of the first swing member and the inner surface 32 of the second swing member.
Are held by a retainer plate 30b. The plurality of balls 30a held on the retainer plate 30b are arranged along an arc having the same diameter as the second bearing grooves 29 and 33. Second
The bearing 30 is sandwiched between the first rocking member outer surface 28 and the second rocking member inner surface 32 in a state where the ball 30a enters the second bearing grooves 29 and 33. As a result, the second swing member 31 is moved relative to the first swing member 25.
Is the second bearing groove which forms the center of the arc of the second bearing grooves 29 and 33.
It becomes swingable about the swing center axis S2. This second
The swing center axis S2 is an axis orthogonal to the first swing center axis S1 and, as shown in FIG. 3, becomes an axis S2 extending left and right on the paper surface through a point O1 on the rotation axis AX1. It is located at the center of the arc (radius R) that forms the bearing grooves 29 and 33.

Here, as can be seen from FIG. 3, the first swing center axis S1 and the second swing center axis S2 are orthogonal to each other and orthogonal to the rotation axis AX1 of the rotary shaft 11. Further, the intersection O1 between the two central axes S1 and S2 is
It is located on X1. As a result, the second swinging member 31 can swing freely in all directions with respect to the swinging base member 21 around the intersection O1 of the two central axes S1 and S2. As a result, the swing support mechanism 20 supports the wafer holding device 12 swingably about the point O1 with respect to the lower end of the rotary shaft 11.

In this case, the position of the point O1 varies in accordance with the radius R of the arc forming the first bearing grooves 23, 27 and the radius R of the arc forming the second bearing grooves 29, 33. That is, the swing center position O1 of the wafer holding device 12 can be arbitrarily set according to the setting of the arc radius R.

Various examples of setting the swing center position O1 will be described with reference to FIG. First, FIG.
3A, the swing center position O1 is the polished surface W of the wafer W held by the swing support mechanism 20 and the wafer holding device 12.
5 shows a case where the radius R is set so as to be between s. In this case, when the polishing pad 2 attached to the platen 1 is rotationally moved in the direction of arrow B, the friction between the polishing pad 2 and the polishing surface Ws of the wafer W causes the polishing pad 2 to move in the same direction as the rotation direction of the platen 1 as indicated by arrow F. Direction frictional force F
(And the wafer holding device 12).

The swing center position O1 is set at the polishing surface W as shown in the figure.
Since it is located above s, a counterclockwise moment M as shown by an arrow M acts on the wafer holding device 12 due to the frictional force F. As a result, the contact surface pressure distribution with the polishing pad 2 on the polishing surface Ws of the wafer W may be non-uniform. However, as compared with the case where the swing support mechanism 20 has a swing center as in the conventional polishing apparatus shown in FIG.
Since the swing center O1 is close to the polishing surface Ws, the moment M is small, and the surface pressure distribution can be made closer to a uniform state. That is, with the configuration as shown in FIG. 4A, the moment M generated based on the frictional force F can be made smaller than in the conventional case, and a more uniform wafer pressure distribution can be achieved, and more favorable wafer polishing can be performed.

FIG. 4B shows a case where the radius R is set so that the swing center position O1 coincides with the polishing surface Ws of the wafer W held by the wafer holding device 12. In this case, the frictional force F generated by the friction between the polishing pad 2 and the polishing surface Ws of the wafer W when the polishing pad 2 attached to the platen 1 is rotationally moved in the direction of arrow B is:
Acts on the swing center O1. For this reason, in this case, even when the frictional force F is received, the moment M = 0 around the swing center O1.
It is. As a result, the contact surface pressure distribution with the polishing pad 2 on the polishing surface Ws of the wafer W is maintained uniformly, and good wafer polishing is possible.

In FIG. 4C, the swing center position O1 is set to the polishing surface Ws of the wafer W held by the wafer holding device 12.
The case where the radius R is set to be lower is shown. In this case, when the polishing pad 2 attached to the platen 1 is rotationally moved in the direction of arrow B, the friction force F generated by the friction between the polishing pad 2 and the polishing surface Ws of the wafer W is obtained.
In response, a clockwise moment M acts on the wafer holding device 12 as shown by an arrow M. That is, in this case, a moment M acts in a direction opposite to that in FIG. Since such a moment M may cause uneven distribution of the contact surface pressure with the polishing pad 2 on the polishing surface Ws of the wafer W, the swing center O1 is set close to the polishing surface Ws and the moment M is reduced. Preferably, it is smaller.

However, such a clockwise moment M
4A, the lower right end of the wafer holding device 20 is pressed against the polishing pad 2 as shown in FIG. 4C, and there is no possibility that a gap is generated in this portion. Therefore, even if the wafer W receives the frictional force F due to friction with the polishing pad 2, there is almost no possibility that the wafer W jumps out of the wafer holding device 20.

Next, a polishing apparatus according to a second embodiment of the present invention will be described with reference to FIGS. This polishing apparatus is a polishing apparatus CM according to the first embodiment shown in FIG.
P differs from P only in the configuration of the swing support mechanism, and the other configuration is the same. Therefore, hereinafter, the swing support mechanism will be described, and the description of the same parts as those in FIG. 1 will be omitted.

FIG. 5 shows a swing support mechanism 5 according to the second embodiment.
0 shows the entire configuration. This swing support mechanism 50
A swing base member 51 bolted to the lower end of the rotary shaft 11 and a first swing member 55 swingably disposed on a lower surface side of the swing base member 51 via a first bearing (not shown).
And a second swing member 63 disposed on the lower surface side of the first swing member 55 via a second bearing 60 so as to be swingable in a direction orthogonal to the swing direction of the first swing member 55. It is configured to have. Then, a first wafer holding member 13 similar to that shown in FIG. 1 is coupled to the lower surface of the second swing member 63.

FIG. 6 shows the shape of the swing base member 51. The swing base member 51 has a central portion 52 in which a coupling surface 52a coupled to a lower end of the rotary shaft 11 is formed on an upper surface and a through hole 52b penetrating vertically is formed.
Further, it has cylindrical arm portions 53, 53 extending downward and to the left and right with the central portion 52 interposed therebetween. Both arms 53,5
3 has a concave cylindrical surface 53a, and a pair of first bearing grooves 54 extending in the circumferential direction are formed on these concave cylindrical surfaces 53a.

FIG. 7 shows the shape of the first swinging member 55. The first swing member 51 has a through hole 55b penetrating vertically.
The arm portions 56, 56, 58, 58 extend in four directions orthogonal to each other with the central portion 55 a having the center portion 55 a interposed therebetween. The arms 56, 56, which are symmetrical with respect to the center 55a, have a convex cylindrical surface 56a on the upper surface, and a pair of first bearing grooves 57 extending in the circumferential direction on the convex cylindrical surface 56a, respectively. Is formed. Further, they extend in a direction orthogonal to the arm portions 56, 56, and
Arm portions 58, 58 which are symmetrical with respect to left and right with respect to each other, have concave cylindrical surfaces 58 a on the lower surface.
A pair of second bearing grooves 59 respectively extending in the circumferential direction are formed on the upper surface a.

FIG. 8 shows the shape of the second swing member 63. The second swing member 63 is configured to be symmetrical with respect to the receiving hole 65 located at the center and to have a convex cylindrical surface 63a on the upper surface. A pair of second bearing grooves 64 each extending in the circumferential direction are formed on the convex cylindrical surface 63a.

The rocking support mechanism 50 stacks the first rocking member 55 on the second rocking member 63 such that the convex cylindrical surface 63a and the concave cylindrical surface 58a face each other and the second bearing 60 is sandwiched therebetween. Assembled. The second bearing 60 includes a plurality of balls 61 and a retainer plate 62 for holding the balls 61.
It goes into the second bearing grooves 59 and 64. For this reason,
The first swing member 55 and the second swing member 63 can swing about the rotation center axis S2 of the second bearing 60 (the axis S2 perpendicular to the plane of FIG. 5).

Next, the swing base member 51 is assembled on the first swing member 55 so that the convex cylindrical surface 56a and the concave cylindrical surface 53a face each other and sandwich the first bearing (not shown). . This first bearing is also the second
Like the bearing 60, a plurality of balls are held by a retainer plate, and the balls enter the first bearing grooves 54 and 57. For this reason, the swing base member 51 and the first swing member 55 are connected to the rotation center axis S of the first bearing.
1 (an axis that intersects the rotation center axis S2 at the point O1 and extends orthogonally to the rotation center axis S2, as shown in FIG. 5).

Finally, the through-hole 52b of the first swing member 51
And the fixing rod 70 is inserted into the receiving hole 65 of the swing base member 63 through the through hole 55b of the second swing member 55,
It is joined by bolts 73 from the lower surface side. Fixed rod 70
Is formed with a flange portion 71 at the upper end. The flange portion 71 serves as a stopper to hold the swing support mechanism 50 assembled as described above in the state of FIG.

In the polishing apparatus using the swing support mechanism 50 having the above-described structure, as shown in FIG. 5, the first swing center axis S1 and the second swing center axis S2 are orthogonal to each other and rotate. It is orthogonal to the rotation axis AX1 of the shaft 11.
Further, the intersection point O1 between the two central axes S1 and S2 is the rotation axis AX1.
Located on top. As a result, the swing base member 51 is
The swing member 63 is swingable in all directions about an intersection O1 between the two central axes S1 and S2. As a result, the swing support mechanism 50 supports the wafer holding device 12 swingably about the point O1 with respect to the lower end of the rotating shaft 11.

In this case, the position of the point O1 varies depending on the radius R of the arc forming the first bearing grooves 54, 57 and the arc forming the second bearing grooves 59, 64. That is, the swing center position O1 of the wafer holding device 12 can be arbitrarily set according to the setting of the arc radius R.

Therefore, in the polishing apparatus according to the second embodiment, similarly to the polishing apparatus according to the first embodiment, the swing center position O1 is appropriately set as shown in FIG. The surface pressure distribution on the surface to be polished can be made uniform so that good polishing can be performed, and the wafer W can be prevented from coming off.

Next, an embodiment of a method for manufacturing a semiconductor device according to the present invention will be described. FIG. 9 is a flowchart showing a semiconductor device manufacturing process. When the semiconductor manufacturing process is started, first, in step S200, an appropriate processing step is selected from the following steps S201 to S204, and the process proceeds to any one of the steps.

Here, step S201 is an oxidation step of oxidizing the surface of the wafer. Step S202 is CV
C to form insulating film and dielectric film on wafer surface by D
This is a VD process. Step S203 is an electrode forming step of forming electrodes on the wafer by vapor deposition or the like. Step S2
Reference numeral 04 denotes an ion implantation step of implanting ions into the wafer.

After the CVD step (S202) or the electrode forming step (S203), the process proceeds to step S206, where the CMP
Determine whether to perform the process. If not, the process proceeds to step S207; otherwise, the process proceeds to step S205. Step S205 is a CMP process. In the CMP process, the polishing apparatus according to the present invention performs planarization of an interlayer insulating film, polishing of a metal film on the surface of a semiconductor device, formation of a damascene by polishing of a dielectric film, and the like.

The CMP step (S205) or the oxidation step
After (S201), the process proceeds to step S207. Step S
Reference numeral 207 denotes a photolithography process. In this step, a resist is applied to the wafer, a circuit pattern is printed on the wafer by exposure using an exposure device, and the exposed wafer is developed. Further, in the next step S208, portions other than the developed resist image are removed by etching,
Thereafter, the resist is removed, and this is an etching step of removing unnecessary resist after etching.

Next, in step S209, it is determined whether or not all necessary processes have been completed.
Returning to step 00, the previous steps are repeated to form a circuit pattern on the wafer. If it is determined in step S209 that all steps have been completed, the process ends.

In the method of manufacturing a semiconductor device according to the present invention, since the polishing apparatus according to the present invention is used in the CMP process, the throughput of the CMP process is improved. As a result, there is an effect that a semiconductor device can be manufactured at a lower cost than a conventional semiconductor device manufacturing method. The polishing apparatus according to the present invention may be used in a CMP step of a semiconductor device manufacturing process other than the above-described semiconductor device manufacturing process. Further, the semiconductor device manufactured by the semiconductor device manufacturing method according to the present invention is manufactured at a high throughput, so that it is a low-cost semiconductor device.

[0054]

As described above, according to the polishing apparatus of the present invention, the center of swing of the object holding device supported by the swing support mechanism is separated from the swing support mechanism and is closer to the surface to be polished. Since it is set at an arbitrary position, for example, by setting this swing center close to the surface to be polished of the polishing object held by the object holding device or by setting it to be located on substantially the same plane as this. In addition, the moment based on the frictional force generated when the surface to be polished and the surface to be polished are relatively moved while being in contact with each other can be reduced or made almost zero. Thereby, good polishing can be performed while keeping the contact pressure between the surface to be polished of the object to be polished and the polishing surface of the polishing pad member uniform.

The swing center is set so as to be located on the side opposite to the object holding device with respect to the surface to be polished, and is generated by receiving a frictional force generated at a contact portion between the polishing surface and the surface to be polished. If the direction of the applied moment is reversed, it is possible to reliably prevent the problem that the polishing object held by the object holding device is pulled out and comes off.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a polishing apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a swing support mechanism constituting the polishing apparatus.

FIG. 3 is a side view showing the swing support mechanism along an arrow III-III in FIG. 2;

FIG. 4 is an explanatory view showing a state where polishing is performed using the polishing apparatus according to the present invention.

FIG. 5 is a cross-sectional view showing a swing support mechanism that constitutes a polishing apparatus according to a second embodiment of the present invention.

FIG. 6 is a plan view and a side view showing a swing base member constituting the swing support mechanism.

FIG. 7 is a plan view and a front view showing a first swing member constituting the swing support mechanism.

FIG. 8 is a plan view and a front view showing a second swinging member that constitutes the swinging support mechanism.

FIG. 9 is a flowchart showing a semiconductor manufacturing process according to the present invention.

FIG. 10 is an explanatory view showing a polishing state by a conventional polishing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Platen 2 Polishing pad 10 Polishing head 11 Rotary shaft 12 Wafer holding device 20, 50 Swing support mechanism 21, 51 Swing base member 25, 55 First swing member 31, 63 Second swing member CMP polishing device

Claims (9)

[Claims] An object holding device for holding an object to be polished, and a polishing pad member for polishing the object to be polished, wherein the polishing pad member is attached to the object to be polished held by the object holding device. A polishing apparatus configured to relatively move the object holding device and the polishing pad member while being in contact with each other to polish a surface to be polished of the object to be polished; The object holding device supported by the swing support mechanism is swingably supported by a support member via a mechanism, and the swing center of the object holding device is separated from the swing support mechanism and is closer to the surface to be polished. A polishing apparatus characterized by being set to: 2. The polishing apparatus according to claim 1, wherein the swing support mechanism is configured such that the swing center is located substantially on the surface to be polished. 3. The swing support mechanism according to claim 1, wherein the swing center is located on a side opposite to the object holding device with respect to the surface to be polished.
A polishing apparatus according to claim 1. 4. The swing support mechanism according to claim 1, wherein the swing support mechanism is connected to the swing base member coupled to an end of the support member, and the swing base member in a first plane including a support center axis of the support member. A first rocking member connected to the first rocking member in a second plane orthogonal to the first plane; and a second rocking member connected to the first rocking member in a second plane orthogonal to the first plane. Wherein the object holding device is attached to the second swing member, and a first swing center axis serving as a swing center of the first swing member and a swing of the second swing member The polishing apparatus according to any one of claims 1 to 3, wherein a second pivot center axis serving as a center is set on the side of the surface to be polished away from the pivot support mechanism. 5. A first guide device for performing relative movement along an arc-shaped first guide portion between mutually opposing first side surfaces of the swing base member and the first swing member, The first swing member is swingable about the arc center of the first guide portion with respect to the swing base member by the first guide device with the first swing center axis as the first swing center axis. A second guide device for performing relative movement along a second guide portion having an arc shape between a second side surface of the member and the second swinging member facing each other and orthogonal to the first side surface; The second swing member is swingable about the arc center of the second guide portion with respect to the first swing member with the second swing center axis by the second guide device. The polishing apparatus according to claim 4. 6. A lower surface of said oscillating base member and an upper surface of said first oscillating member are formed in a first cylindrical surface shape facing each other and projecting upward, and said lower surface of said oscillating base member and A first guide device configured to perform relative movement along the first cylindrical surface between the first swing member and the upper surface of the first swing member, wherein the first swing member is moved by the first guide device to the swing base member; And the center of the first cylindrical surface is swingable about the first swing center axis, and the lower surface of the first swing member and the upper surface of the second swing member are opposed to each other and upper. The first cylindrical surface and the second cylindrical surface extend in a direction perpendicular to each other, and are formed in a second cylindrical surface shape that is convex to the bottom surface of the first rocking member and the second rocking surface. A second guide device for causing relative movement along the second cylindrical surface between the second guide and the second guide; 5. The apparatus according to claim 4, wherein the second swing member is swingable with respect to the first swing member by using a center axis of the second cylindrical surface as the second swing center axis. The polishing apparatus according to the above. 7. The support member is driven to rotate about a support center axis of the support member as a rotation center axis, and the object holding device is driven to rotate with the rotation of the support member via the swing support mechanism. The polishing apparatus according to any one of claims 1 to 6, wherein the polishing apparatus is configured as follows. 8. The polishing object is a semiconductor wafer, comprising a step of flattening the surface of the semiconductor wafer by using the polishing apparatus according to any one of claims 1 to 9. Semiconductor device manufacturing method. 9. A semiconductor device manufactured by the semiconductor device manufacturing method according to claim 10.