JP2002187307A - Organic light emitting diode array - Google Patents
Organic light emitting diode arrayInfo
- Publication number
- JP2002187307A JP2002187307A JP2000384672A JP2000384672A JP2002187307A JP 2002187307 A JP2002187307 A JP 2002187307A JP 2000384672 A JP2000384672 A JP 2000384672A JP 2000384672 A JP2000384672 A JP 2000384672A JP 2002187307 A JP2002187307 A JP 2002187307A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- organic
- cathode
- diode array
- led array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 150000002894 organic compounds Chemical class 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 230000014509 gene expression Effects 0.000 description 9
- 230000005525 hole transport Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 108091008695 photoreceptors Proteins 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- -1 tris (8-quinolinol) aluminum Chemical compound 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、複写機やプリンタ
等の電子写真方式を用いた画像形成装置の光ヘッドとし
て構成される有機発光ダイオードに関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to an organic light emitting diode which is used as an optical head of an electrophotographic image forming apparatus such as a copying machine or a printer.
【０００２】[0002]
【従来の技術】図６は、従来の電子写真方式を用いた画
像形成装置の構成例を示す概略図である。図６におい
て、１１は像担持体としての回転ドラム型の電子写真感
光体、１２は帯電装置、１３は現像装置、１４は転写装
置、１５は定着装置、１６はクリーニング装置である。2. Description of the Related Art FIG. 6 is a schematic diagram showing a configuration example of an image forming apparatus using a conventional electrophotographic system. 6, reference numeral 11 denotes a rotating drum type electrophotographic photosensitive member as an image carrier, 12 denotes a charging device, 13 denotes a developing device, 14 denotes a transfer device, 15 denotes a fixing device, and 16 denotes a cleaning device.
【０００３】この種の画像形成装置では、帯電装置１２
により、回転ドラム型の電子写真感光体１１上を一様に
帯電する。この回転感光体１１の帯電面に対して出力さ
れる目的の画像情報の時系列電気デジタル画素信号に対
応して露光Ｌがなされ、回転感光体１１の周面に対して
目的の画像情報に対応した静電潜像が形成される。その
静電潜像は、絶縁トナーを用いた現像装置１３によりト
ナー像として現像される。In this type of image forming apparatus, the charging device 12
Thereby, the surface of the rotating drum type electrophotographic photosensitive member 11 is uniformly charged. Exposure L is performed in accordance with the time-series electric digital pixel signal of the target image information output to the charged surface of the rotating photoconductor 11, and the peripheral surface of the rotating photoconductor 11 corresponds to the target image information. A formed electrostatic latent image is formed. The electrostatic latent image is developed as a toner image by a developing device 13 using insulating toner.
【０００４】一方、不図示の給紙部から記録材としての
転写材Ｐが供給されて、回転感光体１１と、これに所定
の押圧力で当接させた接触転写手段との圧接ニップ部
（転写部）Ｔに所定のタイミングにて導入され、所定の
転写バイアス電圧を印加して転写を行う。On the other hand, a transfer material P as a recording material is supplied from a paper supply unit (not shown), and a pressure contact nip portion between the rotary photosensitive member 11 and contact transfer means contacting the photosensitive member 11 with a predetermined pressing force. The transfer is performed at a predetermined timing into a transfer portion (T), and a transfer is performed by applying a predetermined transfer bias voltage.
【０００５】トナー画像の転写をうけた転写材Ｐは、感
光体１１の面から分離されて熱定着方式等の定着装置１
５へ導入されてトナー画像の定着をうけ、画像形成物
（プリント）として装置外へ排出される。The transfer material P having received the transfer of the toner image is separated from the surface of the photoreceptor 11 and is fixed by a fixing device 1 such as a heat fixing method.
5, the toner image is fixed, and is discharged out of the apparatus as an image formed product (print).
【０００６】また、転写材Ｐに対するトナー画像転写後
の感光体面は、クリーニング装置１６により残留トナー
等の付着汚染物の除去をうけて清掃され繰り返して作像
に供される。The surface of the photoreceptor after the transfer of the toner image to the transfer material P is cleaned by a cleaning device 16 to remove adhered contaminants such as residual toner, and is repeatedly used for image formation.
【０００７】ここで、感光体上に潜像を書き込むための
露光方式としては、レーザビーム方式や発光ダイオード
アレイ（以下、「ＬＥＤアレイ」）方式などが中心とな
っている。Here, as an exposure method for writing a latent image on a photoreceptor, a laser beam method, a light emitting diode array (hereinafter, referred to as "LED array") method and the like are mainly used.
【０００８】レーザビーム方式の場合には、ポリゴンミ
ラーやレンズ等の光学部品が必要となり装置の小型化が
難しく、また超高速化も難しいという問題がある。In the case of the laser beam system, optical components such as a polygon mirror and a lens are required, so that it is difficult to reduce the size of the apparatus, and it is difficult to increase the speed.
【０００９】また、ＬＥＤアレイ方式の場合には、基板
が高価であり、一枚の基板でアレイを造れないため、切
り出したチップを並べる必要がある。そのときにチップ
間の段差、間隔が問題となる。In the case of the LED array system, since the substrate is expensive and an array cannot be formed with one substrate, it is necessary to arrange the cut chips. At that time, steps and intervals between chips become problems.
【００１０】一方、有機ＬＥＤアレイは、ガラス基板な
どの安価な基板上に作製でき、また一枚の基板でアレイ
を造れるため、上記レーザビーム方式およびＬＥＤ方式
で発生するような問題が生じない。On the other hand, since the organic LED array can be manufactured on an inexpensive substrate such as a glass substrate, and the array can be manufactured with one substrate, the problems that occur in the laser beam system and the LED system do not occur.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、有機Ｌ
ＥＤアレイを用いた画像形成装置で階調を表現しようと
した場合、一画素に対して一発光部で対応するために
は、各発光部の光量を調整する必要があった。However, the organic L
When an image forming apparatus using an ED array attempts to express gradation, it is necessary to adjust the light amount of each light emitting unit in order for one light emitting unit to correspond to one pixel.
【００１２】本発明は、上記課題に鑑みて創案されたも
のであり、その目的は、高速化、小型化、低コスト化、
及び高精細化を達成できるとともに、各発光部の階調表
現を容易に行いうる光ヘッド用の有機ＬＥＤアレイを提
供することにある。The present invention has been made in view of the above problems, and has as its object to increase the speed, reduce the size, reduce the cost,
Another object of the present invention is to provide an organic LED array for an optical head that can achieve high definition and can easily perform gradation expression of each light emitting unit.
【００１３】[0013]
【課題を解決するための手段】上記目的を達成すべく、
本発明の有機ＬＥＤアレイは、絶縁性の透明基板上に、
陽極と陰極とに挟持された有機化合物層を有する有機発
光ダイオードアレイであって、副走査方向に沿ってＯＮ
／ＯＦＦ可能な複数の発光部が配置され、これら複数の
発光部のうち、少なくとも一の発光部の発光面積が他の
発光部の発光面積と異なるものである。In order to achieve the above object,
The organic LED array of the present invention, on an insulating transparent substrate,
An organic light-emitting diode array having an organic compound layer sandwiched between an anode and a cathode, and is turned on along a sub-scanning direction.
A plurality of light emitting units that can be turned on / off are arranged, and among these plurality of light emitting units, the light emitting area of at least one light emitting unit is different from the light emitting area of the other light emitting units.
【００１４】上記の有機ＬＥＤアレイにおいて、複数の
発光部における陽極または陰極のうち少なくとも一方の
電極幅が異なることが好ましい。In the above-mentioned organic LED array, it is preferable that at least one of the anodes and the cathodes in the plurality of light emitting portions has a different electrode width.
【００１５】また、複数の発光部のうち少なくとも一の
発光部は、電子輸送層が発光層を兼ねていることが好ま
しい。It is preferable that at least one of the plurality of light-emitting portions has the electron transport layer also serving as the light-emitting layer.
【００１６】[0016]
【発明の実施の形態】以下、本発明の好適な実施の形態
を図面に基づいて説明するが、本発明は本実施の形態に
限られない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to these embodiments.
【００１７】本発明の有機ＬＥＤアレイは、絶縁性の透
明基板上に、陽極と陰極とに挟持された有機化合物層を
有している。有機化合物層は、例えば正孔輸送層、発光
層、電子輸送層から成り、電子輸送層は発光層を兼ねて
いてもよい。The organic LED array of the present invention has an organic compound layer sandwiched between an anode and a cathode on an insulating transparent substrate. The organic compound layer includes, for example, a hole transport layer, a light emitting layer, and an electron transport layer, and the electron transport layer may also serve as the light emitting layer.
【００１８】陽極と陰極とに挟持された部分の有機化合
物層における発光層が発光部となるが、本実施形態では
副走査方向に沿ってＯＮ／ＯＦＦ可能な複数の発光部が
配置され、これら複数の発光部のうち、少なくとも一の
発光部の発光面積が他の発光部の発光面積と異なるよう
に構成されている。ここで、主走査方向とは光ヘッドに
よって露光される感光材料の移動方向と垂直方向をい
い、副走査方向とは感光材料の移動方向をいう。このよ
うに副走査方向に沿って配置された発光面積の異なる複
数の発光部をそれぞれＯＮ／ＯＦＦして露光することに
より、様々な階調表現が可能となる。The light emitting layer in the portion of the organic compound layer sandwiched between the anode and the cathode serves as a light emitting portion. In this embodiment, a plurality of light emitting portions which can be turned on / off along the sub-scanning direction are arranged. The light emitting area of at least one of the plurality of light emitting sections is different from the light emitting area of the other light emitting section. Here, the main scanning direction refers to a direction perpendicular to the moving direction of the photosensitive material exposed by the optical head, and the sub-scanning direction refers to the moving direction of the photosensitive material. By exposing a plurality of light-emitting units arranged along the sub-scanning direction and having different light-emitting areas to ON / OFF, respectively, various gradations can be expressed.
【００１９】これら複数の発光部のうち少なくとも一の
発光部は、電子輸送層が発光層を兼ねていることが好ま
しい。It is preferable that in at least one of the plurality of light emitting portions, the electron transport layer also serves as the light emitting layer.
【００２０】正孔輸送層としては、Ｎ，Ｎ’−ビス（３
−メチルフェニル）−Ｎ，Ｎ’−ジフェニル−（１，
１’−ビフェニル）−４−４’−ジアミン（以下、「Ｔ
ＰＤ」という。）の他に、例えば下記化学式で表される
有機材料を用いることができる。また、有機材料だけで
はなく、無機材料を用いてもよい。用いられる無機材料
としては、ａ−Ｓｉ、ａ−ＳｉＣなどが挙げられる。As the hole transport layer, N, N'-bis (3
-Methylphenyl) -N, N'-diphenyl- (1,
1′-biphenyl) -4-4′-diamine (hereinafter referred to as “T
PD ". In addition to the above, for example, an organic material represented by the following chemical formula can be used. Further, not only an organic material but also an inorganic material may be used. Examples of the inorganic material used include a-Si and a-SiC.
【００２１】[0021]
【化１】 Embedded image
【００２２】[0022]
【化２】 Embedded image
【００２３】電子輸送層としては、トリス（８−キノリ
ノール）アルミニウム（以下、「Ａｌｑ3」という。）
の他に、例えば下記化学式で表される材料を用いること
ができる。As the electron transporting layer, tris (8-quinolinol) aluminum (hereinafter, referred to as "Alq 3 ").
In addition, for example, a material represented by the following chemical formula can be used.
【００２４】[0024]
【化３】 Embedded image
【００２５】[0025]
【化４】 Embedded image
【００２６】高分子系の発光材料としては、例えば下記
化学式で表される材料などを用いることができる。As the polymer-based light emitting material, for example, a material represented by the following chemical formula can be used.
【００２７】[0027]
【化５】 Embedded image
【００２８】さらに、例えば下記化学式で表されるよう
なドーパント色素を電子輸送層、あるいは正孔輸送層に
ドーピングすることもできる。Further, for example, a dopant dye represented by the following chemical formula can be doped into the electron transporting layer or the hole transporting layer.
【００２９】[0029]
【化６】 Embedded image
【００３０】また、陽極と陰極とに挟持された部分の有
機化合物層における発光層が発光部となるので、複数の
発光部における陽極または陰極のうち少なくとも一方の
電極幅を異なるように構成しても、様々な階調表現を行
うことができる。Further, since the light emitting layer in the organic compound layer in the portion sandwiched between the anode and the cathode serves as the light emitting portion, the width of at least one of the anode and the cathode in the plurality of light emitting portions is configured to be different. Can also perform various gradation expressions.
【００３１】有機ＬＥＤの陽極材料としては、仕事関数
の大きなものが望ましく、例えばＩＴＯ、酸化錫、金、
白金、パラジウム、セレン、イリジウム、ヨウ化銅など
を用いることができる。As the anode material of the organic LED, a material having a large work function is desirable. For example, ITO, tin oxide, gold,
Platinum, palladium, selenium, iridium, copper iodide, and the like can be used.
【００３２】陰極材料としては、仕事関数の小さなもの
が望ましく、例えばＭｇ／Ａｇ、Ｍｇ、Ａｌ、Ｌｉ、Ｉ
ｎ、あるいはこれらの合金等を用いることができる。As the cathode material, those having a small work function are desirable. For example, Mg / Ag, Mg, Al, Li, I
n or an alloy thereof can be used.
【００３３】有機ＬＥＤの発光波長は、感光体の感度が
高い波長を選択することが望ましい。As the emission wavelength of the organic LED, it is desirable to select a wavelength at which the sensitivity of the photosensitive member is high.
【００３４】このように副走査方向に沿ってＯＮ／ＯＦ
Ｆ可能な複数の発光部を配置するとともに、発光部の発
光面積や電極幅の異ならせて積層することにより、各発
光部をＯＮ／ＯＦＦするのみで様々な階調表現が可能と
なる。したがって、高速化、小型化、低コスト化、及び
高精細化を達成できるとともに、各発光部の階調表現の
可能な有機ＬＥＤアレイを実現することができるもので
ある。As described above, ON / OF is performed along the sub-scanning direction.
By arranging a plurality of light emitting units that can perform F and stacking the light emitting units with different light emitting areas and electrode widths, various gray scale expressions can be achieved only by turning on / off each light emitting unit. Therefore, it is possible to realize an organic LED array capable of achieving high speed, miniaturization, low cost, and high definition, and capable of expressing gradation of each light emitting unit.
【００３５】[0035]
【実施例】以下、実施例を挙げて本発明を詳細に説明す
るが、本発明はこれらの実施例に限るものではない。EXAMPLES Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples.
【００３６】〔実施例１〕本実施例は、副走査方向に２
つの発光部の陰極幅が違うことを特徴とする。[Embodiment 1] In the present embodiment, two
It is characterized in that the cathode widths of the two light emitting units are different.
【００３７】図１は実施例１の有機ＬＥＤアレイを示す
斜視図、図２（ａ）は実施例１の有機ＬＥＤアレイを示
す平面図、図２（ｂ）はＡ−Ａ’線断面図である。図示
するように、ガラス基板１上には透明電極３、有機化合
物層２（正孔輸送層４、発光層を兼ねた電子輸送層
５）、そして陰極６が積層されている。ここで、１つの
透明電極３に対して幅の異なる独立した２つの陰極６が
設けられている。なお、図１及び図２において、Ｘは主
走査方向、Ｙは副走査方向を示している。FIG. 1 is a perspective view showing the organic LED array of the first embodiment, FIG. 2 (a) is a plan view showing the organic LED array of the first embodiment, and FIG. 2 (b) is a sectional view taken along line AA '. is there. 1, a transparent electrode 3, an organic compound layer 2 (a hole transport layer 4, an electron transport layer 5 also serving as a light emitting layer), and a cathode 6 are laminated on a glass substrate 1. Here, two independent cathodes 6 having different widths are provided for one transparent electrode 3. 1 and 2, X indicates the main scanning direction and Y indicates the sub-scanning direction.
【００３８】以下に、実施例１の有機ＬＥＤアレイの作
成方法について説明する。Hereinafter, a method of manufacturing the organic LED array of the first embodiment will be described.
【００３９】まず、ガラス基板１上に陽極３としてＩＴ
Ｏを形成する。すなわち、ガラス基板１上にライン幅５
０μｍ、ピッチ８０μｍの金属マスクを被せて、ＩＴＯ
をスパッタ法により１００ｎｍ形成する。なお、ＩＴＯ
のパターニングは、フォトリソグラフィ法を用いて行っ
てもよい。First, an IT was used as an anode 3 on a glass substrate 1.
O is formed. That is, the line width 5 on the glass substrate 1
0μm, 80μm pitch metal mask, ITO
Is formed to a thickness of 100 nm by a sputtering method. In addition, ITO
May be performed using a photolithography method.
【００４０】次に、正孔輸送層４として、前述したＴＰ
Ｄ、すなわちＮ，Ｎ’−ビス（３−メチルフェニル）−
Ｎ，Ｎ’−ジフェニル−（１，１’−ビフェニル）−４
−４’−ジアミンを真空蒸着法により５０ｎｍ蒸着す
る。Next, as the hole transport layer 4,
D, that is, N, N'-bis (3-methylphenyl)-
N, N'-diphenyl- (1,1'-biphenyl) -4
-4′-Diamine is deposited to a thickness of 50 nm by a vacuum deposition method.
【００４１】発光層を兼ねた電子輸送層５として、前述
したＡｌｑ3、すなわちトリス（８−キノリノール）ア
ルミニウムを５０ｎｍ積層する。The above-described Alq 3 , that is, tris (8-quinolinol) aluminum is laminated to a thickness of 50 nm as the electron transporting layer 5 also serving as the light emitting layer.
【００４２】なお、蒸着時の真空度は約２．７〜４．０
×１０-4Ｐａ（２〜３×１０-6Ｔｏｒｒ）であり、成膜
速度は０．２〜０．３ｎｍ／ｓとした。The degree of vacuum at the time of vapor deposition is about 2.7 to 4.0.
× 10 -4 Pa (2 to 3 × 10 -6 Torr), and the film formation rate was 0.2 to 0.3 nm / s.
【００４３】最後に、ライン幅４０μｍ、８０μｍの陰
極６をＭｇとＡｇを１０：１の蒸着速度比で共蒸着し、
Ｍｇ／Ａｇが１０／１の合金を２００ｎｍ形成する。こ
のとき、成膜速度は１ｎｍ／ｓとした。Finally, a cathode 6 having a line width of 40 μm and 80 μm was co-deposited with Mg and Ag at a deposition rate ratio of 10: 1.
An alloy having a Mg / Ag ratio of 10/1 is formed to a thickness of 200 nm. At this time, the deposition rate was 1 nm / s.
【００４４】このようにして得られた有機ＬＥＤアレイ
に駆動用ドライバを接続することで、電子写真用の光源
として用いることができる。すなわち、ＩＴＯ電極をプ
ラス、Ｍｇ／Ａｇ電極をマイナスにして直流電圧を印加
すると、ＩＴＯ電極とＭｇ／Ａｇ電極が交差している部
分から発光が得られる。By connecting a driving driver to the organic LED array thus obtained, it can be used as a light source for electrophotography. That is, when a DC voltage is applied with the ITO electrode being positive and the Mg / Ag electrode being negative, light is emitted from the intersection of the ITO electrode and the Mg / Ag electrode.
【００４５】本実施例の有機ＬＥＤアレイは副走査方向
に２つの発光面積の異なる発光部を有しているため、一
画素に対してこれら２つの発光部をそれぞれＯＮ／ＯＦ
Ｆすることで、４階調の表現が可能となる。Since the organic LED array of this embodiment has two light emitting portions having different light emitting areas in the sub-scanning direction, these two light emitting portions are turned ON / OF for one pixel.
By performing F, expression of four gradations becomes possible.
【００４６】本実施例では副走査方向に２つの発光部を
設けたが、さらに多くの発光部を設けることで様々な階
調表現が可能となる。このように、副走査方向に複数の
発光部を設け、それぞれの発光面積を変えることによ
り、各発光部のＯＮ／ＯＦＦのみで階調表現の可能な有
機ＬＥＤアレイを提供することが可能となった。In this embodiment, two light-emitting portions are provided in the sub-scanning direction. However, by providing more light-emitting portions, various gradations can be expressed. As described above, by providing a plurality of light emitting units in the sub-scanning direction and changing the light emitting area of each, it is possible to provide an organic LED array capable of expressing a gradation only by ON / OFF of each light emitting unit. Was.
【００４７】〔実施例２〕本実施例は、副走査方向に設
けられた２つの発光部の透明電極の幅が異なることを特
徴とする。[Embodiment 2] This embodiment is characterized in that the widths of the transparent electrodes of the two light emitting units provided in the sub-scanning direction are different.
【００４８】図３は、実施例２の有機ＬＥＤアレイを示
す平面図である。図示するように、ガラス基板上には透
明電極３、正孔輸送層４、有機化合物層２（正孔輸送層
と、発光層を兼ねた電子輸送層で構成されている）、そ
して陰極６が積層されている。なお、図３において、Ｘ
は主走査方向、Ｙは副走査方向を示している。FIG. 3 is a plan view showing an organic LED array according to the second embodiment. As shown in the figure, on a glass substrate, a transparent electrode 3, a hole transport layer 4, an organic compound layer 2 (consisting of a hole transport layer and an electron transport layer serving also as a light emitting layer), and a cathode 6 are provided. It is laminated. In FIG. 3, X
Indicates a main scanning direction, and Y indicates a sub-scanning direction.
【００４９】以下に、実施例２の有機ＬＥＤアレイの作
成方法について説明する。Hereinafter, a method for manufacturing the organic LED array of the second embodiment will be described.
【００５０】まず、ガラス基板上に透明電極３としてＩ
ＴＯを作成する。１本のＩＴＯは、図３のように２つの
電極幅の異なる部分を有している。ＩＴＯの異なる幅の
形状は、これに限るものではなく、例えば図４（ａ）
（ｂ）のように異なる発光部を形成できれば、どのよう
な形状であってもよい。First, as a transparent electrode 3 on a glass substrate, I
Create TO. One ITO has two portions having different electrode widths as shown in FIG. The shape of the ITO having different widths is not limited to this. For example, FIG.
As long as different light emitting portions can be formed as shown in FIG.
【００５１】本実施例においては、ライン幅２５μｍ、
５０μｍの２種類のＩＴＯからなる透明電極３があり、
これらのピッチが８０μｍになるように、金属マスクを
被せてＩＴＯをスパッタ法により１００ｎｍ形成する。In this embodiment, the line width is 25 μm,
There is a transparent electrode 3 made of two types of 50 μm ITO,
An ITO is formed to a thickness of 100 nm by a sputtering method while covering a metal mask so that these pitches are 80 μm.
【００５２】次に、真空蒸着法により、正孔輸送層とし
てＴＰＤを５０ｎｍ蒸着する。続いて、発光層を兼ねた
電子輸送層としてＡｌｑ3を５０ｎｍ積層する。Next, 50 nm of TPD is deposited as a hole transport layer by a vacuum deposition method. Subsequently, Alq 3 is stacked to a thickness of 50 nm as an electron transport layer also serving as a light emitting layer.
【００５３】実施例１と同様に、蒸着時の真空度は約
２．７〜４．０×１０-4Ｐａ（２〜３×１０-6Ｔｏｒ
ｒ）であり、成膜速度は０．２〜０．３ｎｍ／ｓとし
た。As in Example 1, the degree of vacuum at the time of vapor deposition is about 2.7 to 4.0 × 10 −4 Pa (2 to 3 × 10 −6 Torr).
r), and the film formation rate was 0.2 to 0.3 nm / s.
【００５４】最後に、透明電極３の幅の異なる部分にそ
れぞれ１本ずつライン幅４０μｍの陰極６が形成できる
ように金属マスクを被せ、陰極６としてＭｇとＡｇを１
０：１の蒸着速度比で共蒸着し、Ｍｇ／Ａｇが１０／１
の合金を２００ｎｍ形成する。このとき、成膜速度は１
ｎｍ／ｓとした。Finally, a metal mask is placed on each of the portions having different widths of the transparent electrode 3 so that a cathode 6 having a line width of 40 μm can be formed.
Co-deposition at a deposition rate ratio of 0: 1, and Mg / Ag is 10/1
Is formed to a thickness of 200 nm. At this time, the deposition rate is 1
nm / s.
【００５５】このようにして得られた有機ＬＥＤアレイ
を実施例１と同様に駆動用ドライバを接続して用いたと
ころ、一画素に対してこの２つの発光部をそれぞれＯＮ
／ＯＦＦすることによって４階調の表現が可能であっ
た。When the organic LED array thus obtained was used by connecting a driving driver in the same manner as in Example 1, the two light emitting portions were turned on for one pixel.
By turning on / off, expression of four gradations was possible.
【００５６】〔実施例３〕本実施例は、副走査方向に設
けられた２つの発光部における陽極の幅及び陰極の幅が
ともに異なることを特徴とする。Embodiment 3 This embodiment is characterized in that the width of the anode and the width of the cathode in the two light emitting units provided in the sub-scanning direction are different from each other.
【００５７】図５は、実施例３の有機ＬＥＤアレイを示
す平面図である。なお、図５において、Ｘは主走査方
向、Ｙは副走査方向を示している。FIG. 5 is a plan view showing an organic LED array according to the third embodiment. In FIG. 5, X indicates the main scanning direction, and Y indicates the sub-scanning direction.
【００５８】図示するように、透明電極３は実施例２と
同様に副走査方向に２５μｍ、５０μｍの２つの幅のＩ
ＴＯを形成し、その上に正孔輸送層としてＴＰＤを５０
ｎｍ、発光層を兼ねた電子輸送層としてＡｌｑ3を５０
ｎｍ蒸着する。As shown in the drawing, the transparent electrode 3 has two widths of 25 μm and 50 μm in the sub-scanning direction in the same manner as in the second embodiment.
TO is formed, and TPD is deposited thereon as a hole transport layer.
Alq 3 as an electron transport layer also serving as a light emitting layer
nm.
【００５９】最後に、透明電極３の幅の異なる部分にそ
れぞれ１本ずつライン幅の異なる陰極６が形成できるよ
うに金属マスクを被せ、陰極６としてＭｇとＡｇを１
０：１の蒸着速度比で共蒸着し、Ｍｇ／Ａｇが１０／１
の合金を２００ｎｍ形成する。このとき、成膜速度は１
ｎｍ／ｓとした。本実施例においては、透明電極３の幅
が２５μｍの部分に４０μｍ幅の陰極６を、透明電極３
の幅が５０μｍの部分に８０μｍ幅の陰極６を形成し
た。Lastly, a metal mask is placed so as to form one cathode 6 having a different line width on each of the portions having different widths of the transparent electrode 3.
Co-deposition at a deposition rate ratio of 0: 1, and Mg / Ag is 10/1
Is formed to a thickness of 200 nm. At this time, the deposition rate is 1
nm / s. In this embodiment, a cathode 6 having a width of 40 μm is provided on a portion where the width of the transparent electrode 3 is 25 μm.
The cathode 6 having a width of 80 μm was formed in a portion having a width of 50 μm.
【００６０】透明電極３及び金属電極（陰極）６の幅お
よび形状は、これに限るものではなく、所望の階調表現
が可能となるように自由に選択できる。The width and shape of the transparent electrode 3 and the metal electrode (cathode) 6 are not limited to these, and can be freely selected so as to enable desired gradation expression.
【００６１】このようにして得られた有機ＬＥＤアレイ
を実施例１と同様に駆動用ドライバを接続して用いたと
ころ、一画素に対してこの２つの発光部をそれぞれＯＮ
／ＯＦＦすることによって階調表現が可能であった。When the organic LED array thus obtained was used by connecting a driving driver in the same manner as in Example 1, the two light emitting portions were turned on for one pixel.
By turning on / off, gradation expression was possible.
【００６２】[0062]
【発明の効果】以上説明したように、本発明によれば、
副走査方向に沿ってＯＮ／ＯＦＦ可能な複数の発光部を
配置し、これら複数の発光部のうち、少なくとも一の発
光部の発光面積を他の発光部の発光面積と異ならせるこ
とにより、様々な階調表現が可能となる。さらに、陽極
または陰極の電極幅を異ならせて積層することにより、
階調表現の可能性をより拡大することができる。したが
って、高速化、小型化、低コスト化、及び高精細化を達
成できるとともに、各発光部の階調表現を容易に行いう
る光ヘッド用の有機ＬＥＤアレイを提供することができ
る。As described above, according to the present invention,
A plurality of light emitting units that can be turned on / off along the sub-scanning direction are arranged, and by making the light emitting area of at least one of the light emitting units different from the light emitting area of the other light emitting units, various light emitting units are provided. This makes it possible to express various gradations. Furthermore, by laminating the anode or cathode with different electrode width,
The possibility of gradation expression can be further expanded. Therefore, it is possible to provide an organic LED array for an optical head that can achieve high speed, miniaturization, low cost, and high definition, and can easily perform gradation expression of each light emitting unit.
【図１】実施例１の有機ＬＥＤアレイを示す斜視図であ
る。FIG. 1 is a perspective view illustrating an organic LED array according to a first embodiment.
【図２】（ａ）は実施例１の有機ＬＥＤアレイを示す平
面図、（ｂ）はそのＡ−Ａ’断面図である。FIG. 2A is a plan view illustrating an organic LED array according to a first embodiment, and FIG. 2B is a cross-sectional view taken along the line AA ′.
【図３】実施例２の有機ＬＥＤアレイを示す平面図であ
る。FIG. 3 is a plan view showing an organic LED array according to a second embodiment.
【図４】実施例２において、金属電極の幅の異なる変形
例を示す平面図である。FIG. 4 is a plan view showing a modification of the second embodiment in which the width of the metal electrode is different.
【図５】実施例３の有機ＬＥＤアレイを示す平面図であ
る。FIG. 5 is a plan view illustrating an organic LED array according to a third embodiment.
【図６】従来の電子写真方式を用いた画像形成装置の構
成例を示す概略図である。FIG. 6 is a schematic diagram illustrating a configuration example of an image forming apparatus using a conventional electrophotographic method.
１ ガラス基板 ２ 有機化合物層 ３ 透明電極（陽極） ４ 正孔輸送層 ５ 発光層を兼ねる電子輸送層 ６ 金属電極（陰極） REFERENCE SIGNS LIST 1 glass substrate 2 organic compound layer 3 transparent electrode (anode) 4 hole transport layer 5 electron transport layer also serving as light emitting layer 6 metal electrode (cathode)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 上野 和則 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 Ｆターム(参考） 2C162 AE13 AE28 AF02 AH23 FA04 FA16 FA23 3K007 AB02 BA01 BA06 CA01 CB01 DA01 DB03 EB00 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kazunori Ueno 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (reference) 2C162 AE13 AE28 AF02 AH23 FA04 FA16 FA23 3K007 AB02 BA01 BA06 CA01 CB01 DA01 DB03 EB00
Claims (3)
挟持された有機化合物層を有する有機発光ダイオードア
レイであって、 副走査方向に沿ってＯＮ／ＯＦＦ可能な複数の発光部が
配置され、これら複数の発光部のうち、少なくとも一の
発光部の発光面積が他の発光部の発光面積と異なること
を特徴とする有機発光ダイオードアレイ。1. An organic light-emitting diode array having an organic compound layer sandwiched between an anode and a cathode on an insulating transparent substrate, wherein a plurality of light-emitting portions that can be turned on / off along a sub-scanning direction are provided. An organic light emitting diode array that is arranged, wherein at least one of the plurality of light emitting units has a light emitting area different from that of the other light emitting units.
うち、少なくとも一方の電極の幅が異なることを特徴と
する請求項１に記載の有機発光ダイオードアレイ。2. The organic light emitting diode array according to claim 1, wherein the width of at least one of the anode and the cathode in the plurality of light emitting units is different.
部は、電子輸送層が発光層を兼ねていることを特徴とす
る請求項１または２に記載の有機発光ダイオードアレ
イ。3. The organic light emitting diode array according to claim 1, wherein at least one of the plurality of light emitting units has an electron transport layer also serving as a light emitting layer.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11254738A (en) * | 1998-03-06 | 1999-09-21 | Canon Inc | Exposing apparatus and imaging system |
| JP2000085178A (en) * | 1998-09-09 | 2000-03-28 | Canon Inc | Exposing apparatus and image forming apparatus |
| JP2000277253A (en) * | 1999-03-26 | 2000-10-06 | Canon Inc | Luminous element, light emitting device, display device, aligner, and image forming device |
-
2000
- 2000-12-19 JP JP2000384672A patent/JP4541535B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11254738A (en) * | 1998-03-06 | 1999-09-21 | Canon Inc | Exposing apparatus and imaging system |
| JP2000085178A (en) * | 1998-09-09 | 2000-03-28 | Canon Inc | Exposing apparatus and image forming apparatus |
| JP2000277253A (en) * | 1999-03-26 | 2000-10-06 | Canon Inc | Luminous element, light emitting device, display device, aligner, and image forming device |
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