JP2002185005A5 - - Google Patents

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Publication number
JP2002185005A5
JP2002185005A5 JP2000382104A JP2000382104A JP2002185005A5 JP 2002185005 A5 JP2002185005 A5 JP 2002185005A5 JP 2000382104 A JP2000382104 A JP 2000382104A JP 2000382104 A JP2000382104 A JP 2000382104A JP 2002185005 A5 JP2002185005 A5 JP 2002185005A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000382104A
Other languages
Japanese (ja)
Other versions
JP2002185005A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000382104A priority Critical patent/JP2002185005A/ja
Priority claimed from JP2000382104A external-priority patent/JP2002185005A/ja
Publication of JP2002185005A publication Critical patent/JP2002185005A/ja
Publication of JP2002185005A5 publication Critical patent/JP2002185005A5/ja
Pending legal-status Critical Current

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JP2000382104A 2000-12-15 2000-12-15 混成tftアレー基板とその製造方法 Pending JP2002185005A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000382104A JP2002185005A (ja) 2000-12-15 2000-12-15 混成tftアレー基板とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000382104A JP2002185005A (ja) 2000-12-15 2000-12-15 混成tftアレー基板とその製造方法

Publications (2)

Publication Number Publication Date
JP2002185005A JP2002185005A (ja) 2002-06-28
JP2002185005A5 true JP2002185005A5 (es) 2008-02-21

Family

ID=18849992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000382104A Pending JP2002185005A (ja) 2000-12-15 2000-12-15 混成tftアレー基板とその製造方法

Country Status (1)

Country Link
JP (1) JP2002185005A (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5025057B2 (ja) * 2001-05-10 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2005093813A1 (en) * 2004-03-25 2005-10-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
JP4713192B2 (ja) * 2004-03-25 2011-06-29 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
KR100732858B1 (ko) 2005-05-13 2007-06-27 삼성에스디아이 주식회사 다결정질 박막의 현장 성장방법
FR2890236B1 (fr) 2005-08-30 2007-11-30 Commissariat Energie Atomique Procede de fabrication de circuits en couches minces en silicium amorphe et polycristallin
KR101293566B1 (ko) 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP2013149953A (ja) * 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法

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