JP2002184843A - Semiconductor substrate holder - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor substrate holder capable of enhancing a manufacturing yield in a sputtering process of a semiconductor substrate. SOLUTION: A semiconductor substrate holder 1 comprises a stage 3 for mounting a semiconductor substrate 2, and a pillar 5 for supporting a guide means 4 for guiding the semiconductor substrate 2 to this stage 3 and the stage 3. The stage 3 has a shape inclined to a center side as an outer peripheral surface is estranged from a mounting surface 6. The guide means 4 comprises three rod-like members 7 extending so as to widen at a predetermined angle from a periphery of the stage 3, and a connection member 8 connected thereto. The three rod-like members 7 extend so as to widen in an upward direction of the mounting surface 6 of the stage 3 along the outer peripheral surface of the inclined stage 3. The semiconductor substrate 2 comes into contact with the rod-like member 7, while continuing to drop, thereby adjusting the position, so that it is finally mounted on the stage 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor substrate holding device in a sputtering device for forming a metal film on the surface of a semiconductor substrate.

[0002]

2. Description of the Related Art FIG.
FIG. 3 is a cross-sectional view schematically showing a structure of a No. 0. In the sputtering apparatus 20, the semiconductor substrate 21 is placed on a transfer arm 22 or the like as a transfer means, and the sputtering apparatus 2
0 is transported into the sputtering chamber. FIG. 6 shows the semiconductor substrate 2
1 shows a transfer route. The semiconductor substrate 21 to be subjected to the sputtering process is transferred from the cassette set chamber 35 to the transfer arm 22.
For example, the wafer is transferred to the sputtering chamber via the transfer chamber. After the sputtering process is performed, similarly, the wafer is transferred from the sputtering chamber to the cassette set chamber 35 via the transfer chamber 36 by the transfer arm 22 or the like.

The semiconductor substrate 21 transferred into the sputtering chamber by the transfer arm 22 is held by a semiconductor substrate holding device 23 in the sputtering chamber. For example, an argon gas or the like is introduced into the sputtering chamber. After the semiconductor substrate holding device 23 holds the semiconductor substrate 21, the sputtering chamber is placed in a discharge state, so that the activated argon gas is applied to the target plate 24 made of a metal material disposed to face the semiconductor substrate holding device 23. It collides with the surface and releases the metal particles 25. The metal particles 25 are applied to a semiconductor substrate holding device 23 that is disposed to face the target plate 24.
A metal film is formed by attaching and depositing on the semiconductor substrate 21 held in the semiconductor device. The semiconductor substrate 21 after the sputtering process is again transferred from the semiconductor substrate holding device 23 to the outside of the sputtering chamber by the transfer arm 22 or the like.

FIGS. 7A and 7B are a plan view and a sectional view showing an example of a conventional semiconductor substrate holding device 23. In the semiconductor substrate holding device 23 shown in FIGS. 7A and 7B, the periphery of the semiconductor substrate 21 placed on the stage 26 is pressed and held by a substrate holding ring 27. FIGS. 8A and 8B are a plan view and a sectional view showing another example of the conventional semiconductor substrate holding device 23. FIG. In the semiconductor substrate holding device 23 shown in FIGS. 8A and 8B, the outer peripheral portion of the semiconductor substrate 21 placed on a dedicated holder 28 is pressed and held by a claw-shaped member 29.

FIG. 9 is a sectional view showing still another example of the conventional semiconductor substrate holding device 23. As shown in FIG. In the semiconductor substrate holding device 23 shown in FIG. 9, only the semiconductor substrate 21 is mounted on the stage 30, but the mounting surface of the stage 30 on which the semiconductor substrate 21 is mounted is made larger than the semiconductor substrate 21. ing. FIG. 10 shows a conventional semiconductor substrate holding device 23.
It is sectional drawing which shows further another example of. In the semiconductor substrate holding device 23 shown in FIG.
The stage 31 is only placed on the substrate 1, but the mounting surface of the stage 31 on which the semiconductor substrate 21 is mounted is made smaller than the semiconductor substrate 21.

[0006]

As a metal film deposited on the semiconductor substrate 2, the metal film adheres uniformly to one entire surface of the semiconductor substrate, and turns to the mounting surface (back surface) side of the semiconductor substrate 2. It is desired that they do not stick and stick. However, in the semiconductor substrate holding device 23 shown in FIGS. 7A and 7B, since the semiconductor substrate 21 is pressed and held by the substrate pressing ring 27, the metal film is formed on the back surface of the semiconductor substrate 21 on the stage 26 side. Although there is an advantage that the metal film 33 does not adhere to the portion covered with the substrate holding ring 27, there is a problem that the metal film 33 does not adhere and becomes a defective portion. Similarly, FIGS. 8A and 8B
Since the semiconductor substrate 21 is pressed and held by the claw-like member 29 in the semiconductor substrate holding device 23 shown in FIG.
Although there is an advantage that the metal film wraps around and does not adhere to the back surface of the holder 1 side, there is a problem that a portion covered with the claw-like member 29 does not adhere to the metal film and thus becomes a defective portion.

A semiconductor substrate holding device 23 as shown in FIG.
Then, the stage 3 having a larger mounting surface than the semiconductor substrate 21
Since the semiconductor substrate 21 is merely mounted on the substrate 0, the metal film 33 can be attached to the entire surface of one surface of the semiconductor substrate 21. However, the stage 30 and the semiconductor substrate 2
The periphery of 1 is fixed by the adhesion of the metal film 33, and a problem occurs that the semiconductor substrate 21 does not peel off from the stage 30. Further, if the transfer accuracy of the semiconductor substrate 21 is not sufficient, when the next semiconductor substrate is transferred, the semiconductor substrate is mounted on the metal film 33 deposited on the stage 30, which may cause a problem. There is.

A semiconductor substrate holding device 2 as shown in FIG.
In No. 3, the metal film 33 can be attached to the entire surface of one surface of the semiconductor substrate 21 because the mounting surface is merely placed on the stage 31 smaller than the mounting surface of the semiconductor substrate 21. However, since the metal film 33 wraps around and adheres to the back surface 32 of the semiconductor substrate 21 protruding from the stage 31 on the stage 31 side, there is a problem that a portion where the metal film 33 wraps around and adheres becomes a defective portion.

In general, the distance between the target plate and the semiconductor substrate holding device is fixed in the semiconductor substrate holding device in the sputtering apparatus, so that the distance between the target plate and the semiconductor substrate held by the semiconductor substrate holding device is small. The distance cannot be changed easily. Therefore, it is difficult to adjust the thickness distribution of the metal film on the surface of the semiconductor substrate.

[0010] An object of the present invention is to provide a semiconductor substrate holding apparatus capable of improving the yield in the sputtering processing of a semiconductor substrate.

[0011]

According to the present invention, there is provided a semiconductor substrate holding apparatus for holding a semiconductor substrate in a sputtering apparatus, comprising: a stage on which a semiconductor substrate is mounted; and an inner surface extending at a predetermined angle from the periphery of the stage. And a guide means for guiding the semiconductor substrate to the stage.

According to the present invention, the semiconductor substrate has an inner surface extending at a predetermined angle from the periphery of the stage where the semiconductor substrate is located, and the semiconductor substrate is moved to a predetermined location on the stage by the guide means for guiding the semiconductor substrate to the stage. Placed on Accordingly, it is possible to prevent the metal film from wrapping around the back side of the semiconductor substrate and being fixed to the stage, being shifted from the stage, and to improve the yield.

According to another aspect of the present invention, there is provided a semiconductor substrate holding apparatus for holding a semiconductor substrate in a sputtering apparatus, comprising: a stage on which the semiconductor substrate is mounted; and three or more extending from the periphery of the stage at a predetermined angle. A semiconductor substrate holding device comprising: a rod-shaped member; and guide means for guiding a semiconductor substrate to a stage.

According to the present invention, the semiconductor substrate has three or more rod-shaped members extending from the periphery of the stage at a predetermined angle, and the semiconductor substrate is guided by the guide means for guiding the semiconductor substrate to the stage. It is arranged at the position. Accordingly, it is possible to prevent the metal film from wrapping around the back side of the semiconductor substrate and being fixed to the stage, being shifted from the stage, and to improve the yield.

Further, according to the present invention, the stage mounting surface is
It has the same shape and the same size as a semiconductor substrate mounted thereon.

According to the present invention, the mounting surface of the stage has the same shape and the same size as the semiconductor substrate mounted thereon, so that the metal film is deposited by sputtering between the semiconductor substrate and the stage. Sticking can be prevented. Further, the metal film does not wrap around and deposit on the back surface of the semiconductor substrate. Therefore, the yield in the sputtering process can be improved.

Further, according to the present invention, the outer peripheral surface of the stage may be:
It is characterized in that it inclines toward the center as it moves away from the mounting surface.

According to the present invention, since the outer peripheral surface of the stage is inclined toward the center side as it moves away from the mounting surface of the stage, the adhesion of the semiconductor substrate and the stage due to the deposition of the metal film by the sputtering process is further prevented. can do. Therefore, the yield in the sputtering process can be further improved.

The present invention is characterized in that the stage is movable in a direction perpendicular to the mounting surface.

According to the present invention, since the stage is movable in a direction perpendicular to the mounting surface, the distance between the semiconductor substrate mounted on the stage and the target can be freely adjusted. Thus, the film thickness distribution of the metal film on the surface of the semiconductor substrate can be optimized. Therefore, the yield in the sputtering process can be improved.

[0021]

FIG. 1A is a plan view showing a semiconductor substrate holding device 1 according to an embodiment of the present invention, and FIG. 1B is a front view showing the semiconductor substrate holding device 1. is there.
The semiconductor substrate holding device 1 includes a stage 3 on which a semiconductor substrate 2 is placed, a guide means 4 for guiding the semiconductor substrate 2 to the stage 3, and a support column 5 for supporting the stage 3. In the present embodiment, the semiconductor substrate 2 held by the semiconductor substrate holding device 1 has a circular shape. The shape of the mounting surface 6 of the stage 3 on which the semiconductor substrate 2 is mounted is a circle having the same shape and the same size as the semiconductor substrate 2. Also,
The stage 3 has a structure in which the outer peripheral surface is inclined toward the center side as the outer peripheral surface moves away from the mounting surface 6, and thus has a truncated cone shape in the present embodiment. The stage 3 is supported by a support 5 on the side opposite to the mounting surface 6 on which the semiconductor substrate 2 is mounted. The inclination angle of the outer peripheral surface of the stage 3 is
For example, it is set to 45 °. As described above, the mounting surface 6 has the same shape and the same size as the semiconductor substrate 2, and the outer peripheral surface of the stage 3 is inclined, so that the semiconductor substrate 2 and the stage 3 made of the metal film formed by the sputtering process are formed. Can be prevented from sticking, and the metal film does not go around and deposit on the back surface of the semiconductor substrate 2. Therefore, the yield in the sputtering process can be improved. The support 5 can reciprocate in the axial direction of the support 5 (the direction of the arrow A in FIG. 1B), and adjusts the distance between the semiconductor substrate 2 and the target material during the sputtering process. can do.

The guide means 4 comprises three rod-like members 7 extending from the periphery of the stage 3 at a predetermined angle and a connecting member 8 for connecting these members. The three rod-shaped members 7 come into contact with the outer peripheral surface of the stage 3 on the truncated cone, and extend from the end on the column 5 side of the stage 3 along the outer peripheral surface to above the mounting surface 6 of the stage 3. Extends to. The three rod-shaped members 7 are connected by an annular connecting member 8 on the column 5 side of the stage 3. The connecting member 8 is not fixed to the column 5, but is fixed to a part of the inner wall of the sputtering apparatus. The support 5 may be a cylinder or a polygonal pillar.

In this embodiment, three rod-shaped members 7 are arranged around the mounting surface 6 at intervals of 120 ° around the center axis of the stage 3. Although the three rod members 7 of the present embodiment are arranged, three or more rod members 7 may be arranged, and the intervals between adjacent rod members 7 are arranged at equal intervals around the stage 3. It is not necessary to provide the semiconductor substrate 2 at a predetermined interval so that the semiconductor substrate 2 does not deviate from the stage 3. Thus, Stage 3
By providing the guide means 4 around the periphery, the semiconductor substrate 2 can be guided on the stage 3 and positioned.

The stage 3 has a semiconductor substrate transport mechanism 9 for transporting the semiconductor substrate 2. FIG.
FIG. 9 is a view showing the operation of the semiconductor substrate transport mechanism 9 of the stage 3. The semiconductor substrate transport mechanism 9 is provided with a semiconductor substrate 2 that is transported into the sputtering apparatus from outside by transport means.
And a mechanism for transferring the semiconductor substrate 2 from the stage 3 to the transfer means after completion of the sputtering process. The semiconductor substrate transport mechanism 9 is disposed at the center of the stage 3 and includes a semiconductor substrate mounting part 10 on which the semiconductor substrate 2 is mounted, and a support 11 for supporting the semiconductor substrate mounting part 10. The semiconductor substrate mounting portion 10 and the support 11 are housed inside the stage 3. The semiconductor substrate 2 is mounted on the semiconductor substrate mounting portion 10 and is moved in the same direction as the moving direction of the stage 3 (arrow A in FIG. 2).
The semiconductor substrate 2 is moved up and down in the direction
Is placed on the placing surface 6.

Next, an operation of performing a sputtering process in the sputtering apparatus while holding the semiconductor substrate 2 in the semiconductor substrate holding apparatus 1 will be described. When the semiconductor substrate 2 is transported by a transport means such as a transport arm, the semiconductor substrate transport mechanism 9 arranged at the center of the stage 3 for receiving the semiconductor substrate 2 is raised, and the semiconductor substrate 2 is moved above the guide member 4. The substrate 2 is received. Thereafter, the semiconductor substrate transport mechanism 9 that has received the semiconductor substrate 2 descends, and the semiconductor substrate 2 continues to descend while being in contact with the rod-shaped member 7, so that the position is adjusted and finally guided to the stage 3. Is placed. At this time, the mounting surface 6 of the stage 3
Since the semiconductor substrate 2 has the same shape and the same size as the semiconductor substrate 2, the semiconductor substrate 2 is mounted exactly without protruding from the stage 3.

Next, as shown in FIG. 3, the stage 3 on which the semiconductor substrate 2 is mounted rises in order to adjust the distance between the stage 3 and a target material (metal material) 13 which is attached to face the stage 3. The metal film 12 is formed by stopping and performing a sputtering process. Since the stage 3 is movable in the direction perpendicular to the mounting surface 6 as described above, the distance between the semiconductor substrate 2 and the target 13 can be freely adjusted, and the thickness of the metal film on the surface of the semiconductor substrate can be adjusted. The distribution can be optimized. After the formation of the metal film 12, the stage 3 is lowered to transfer the semiconductor substrate 2 after the sputtering process from the semiconductor substrate transfer mechanism 9 to a transfer arm or the like.

FIG. 4A is a plan view showing a semiconductor substrate holding device 15 according to an embodiment of the present invention.
(B) is a sectional view showing the semiconductor substrate holding device 15.
In the semiconductor substrate holding device 15 of the present embodiment, portions corresponding to those of the semiconductor substrate holding device 1 of the above embodiment are denoted by the same reference numerals, and description thereof is omitted. Semiconductor substrate holding device 15
The semiconductor substrate holding device 1 is different from the semiconductor substrate holding device 1 only in the guiding means for guiding the semiconductor substrate 2 to the stage 3. The guide means of the semiconductor substrate holding device 15 covers the entire outer peripheral surface of the stage 3,
It is constituted by a guide member 16 having an inner surface extending at a predetermined angle from the periphery of the stage 3. In the semiconductor substrate holding device 15 of the present embodiment, since the stage 3 has a truncated cone shape, the guide member 16 has the same truncated cone shape as the stage 3 and the inner peripheral surface of the guide member 16 that covers the outer peripheral surface of the stage 3. Are arranged in contact with the outer peripheral surface of the stage 3 and along the outer peripheral surface. Further, the guide member 16 is not fixed to the stage 3 and the column 5 but is fixed to a part of the inner wall of the sputtering apparatus. Semiconductor substrate holding device 15
The operation at the time of the sputtering process is the same as that of the above embodiment, and the description is omitted. By providing the guide means in this way, the semiconductor substrate 2 can be reliably guided and held on the mounting surface 6 of the stage 3.

[0028]

As described above, according to the present invention, the semiconductor substrate has an inner surface extending at a predetermined angle from the periphery of the stage where the semiconductor substrate is located, and the semiconductor substrate is guided by the guide means for guiding the semiconductor substrate to the stage. It is placed at a predetermined place on the stage. Accordingly, it is possible to prevent the metal film from wrapping around the back side of the semiconductor substrate and being fixed to the stage, being shifted from the stage, and to improve the yield.

According to the present invention, the semiconductor substrate has three or more rod-shaped members extending from the periphery of the stage at a predetermined angle, and the semiconductor substrate is guided on the stage by the guide means for guiding the semiconductor substrate to the stage. It is arranged at a predetermined position. Accordingly, it is possible to prevent the metal film from wrapping around the back side of the semiconductor substrate and being fixed to the stage, being shifted from the stage, and to improve the yield.

According to the present invention, since the mounting surface of the stage has the same shape and the same size as the semiconductor substrate mounted thereon, the deposition of the metal film by the sputtering process between the semiconductor substrate and the stage is performed. Can be prevented from sticking. Further, the metal film does not wrap around and deposit on the back surface of the stage of the semiconductor substrate. Therefore, the yield in the sputtering process can be improved.

According to the present invention, since the outer peripheral surface of the stage is inclined toward the center as it moves away from the mounting surface of the stage, the adhesion of the semiconductor substrate and the stage due to the deposition of the metal film by the sputtering process is further prevented. can do. Therefore, the yield in the sputtering process can be further improved.

According to the present invention, since the stage is movable in a direction perpendicular to the mounting surface, the distance between the semiconductor substrate mounted on the stage and the target can be freely adjusted. Thus, the film thickness distribution of the metal film on the surface of the semiconductor substrate can be optimized. Therefore, the yield in the sputtering process can be improved.

[Brief description of the drawings]

FIGS. 1A and 1B are a plan view and a front view, respectively, showing a semiconductor substrate holding device 1 according to an embodiment of the present invention.

FIG. 2 is a diagram showing an operation of a semiconductor substrate transport mechanism 9 of the semiconductor substrate holding device 1 of FIG.

FIG. 3 is a diagram showing an operation of the semiconductor substrate holding device 1 in the sputtering device.

FIGS. 4A and 4B are a plan view and a cross-sectional view illustrating a semiconductor substrate holding device 15 according to an embodiment of the present invention.

FIG. 5 is a diagram showing a configuration of a general sputtering apparatus 20.

FIG. 6 is a view showing a transfer path of a semiconductor substrate 21 subjected to a sputtering process by a sputtering apparatus 20.

7 (a) and 7 (b) are a plan view and a cross-sectional view showing an example of a conventional semiconductor substrate holding device 23. FIG.

8 (a) and 8 (b) are a plan view and a sectional view showing another example of the conventional semiconductor substrate holding device 23. FIG.

FIG. 9 is a sectional view showing still another example of the conventional semiconductor substrate holding device 23.

FIG. 10 is a sectional view showing still another example of the conventional semiconductor substrate holding device 23.

[Explanation of symbols]

 1, 15 Semiconductor substrate holding device 2 Semiconductor substrate 3 Stage 4 Guide means 6 Mounting surface 7 Bar-shaped member 16 Guide member

Claims (5)

[Claims] 1. A semiconductor substrate holding apparatus for holding a semiconductor substrate in a sputtering apparatus, comprising: a stage on which the semiconductor substrate is mounted; and an inner surface extending at a predetermined angle from a periphery of the stage, wherein the semiconductor substrate is mounted on the stage. A semiconductor substrate holding device, comprising: a guide unit for guiding. 2. A semiconductor substrate holding device for holding a semiconductor substrate in a sputtering device, comprising: a stage on which the semiconductor substrate is mounted; and three or more rod-shaped members extending from the periphery of the stage at a predetermined angle. And a guide means for guiding the semiconductor substrate to the stage. 3. The semiconductor substrate holding device according to claim 1, wherein a mounting surface of the stage has the same shape and the same size as a semiconductor substrate mounted thereon. 4. The semiconductor substrate holding device according to claim 3, wherein an outer peripheral surface of the stage is inclined toward a center side as the stage is separated from the mounting surface. 5. The semiconductor substrate holding device according to claim 1, wherein the stage is movable in a direction perpendicular to a mounting surface.