JP2002184745A - Substrate treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treating device for increasing the temperature of the removing liquid safely without causing any bumping phenomenon when increasing the temperature of the liquid that is composed by a constituent obtained by mixing a plurality of chemical. SOLUTION: A section 42 for heating the removing liquid is arranged in a circulation path 43 of the liquid, and comprises a section 44 that is composed by such translucent member as quartz for receiving the liquid at the inner space 45, and a halogen lamp 47 that is arranged in a recess 46 being formed at the section 44 for removing the liquid. The halogen lamp 47 functions as a light source for heating the liquid in the inner space 45 by applying light to the liquid to be removed in the inner space at the section 44 for receiving the liquid via the translucent section 44 for receiving the liquid.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thin film formed on a surface thereof by a process such as dry etching using a resist film as a mask.
The present invention relates to a substrate processing apparatus for removing a reaction product or the like generated on the surface of a substrate by using a removing liquid.

[0002]

2. Description of the Related Art In a process of manufacturing a semiconductor device, an etching process is performed in which a thin film of a metal such as aluminum or copper formed on a surface of a substrate such as a semiconductor wafer is patterned by etching using a resist film as a mask. Is done. When a fine circuit pattern is formed in this etching step, RIE (Rea)
Dry etching such as active ion etching / reactive ion etching) is employed.

[0003] Since the power of reactive ions used in such dry etching is extremely strong, the resist film disappears at a fixed rate when the etching of the metal film is completed, and a part of the resist film is formed of polymer or the like. It changes into a reaction product and deposits on the side wall of the metal film. Since the reaction product is not removed in the subsequent resist removing step, it is necessary to remove the reaction product before performing the resist removing step.

For this reason, conventionally, after a dry etching step, a removing liquid having an action of removing a reaction product is supplied to a substrate to remove a reaction product deposited on a side wall of a metal film. A product removal step is being performed.

[0005]

Heretofore, as a removing solution used in such a reaction product removing step, a solution used at ordinary temperature has been generally used. However, in recent years, a removing solution has been developed which is used at a temperature higher than room temperature to enhance the performance of removing reaction products.
When such a removing liquid is used, it is necessary to raise the temperature of the removing liquid to a temperature of about 50 to 80 degrees Celsius using a removing liquid heating unit provided with a heater.

When the removing liquid is heated by using a removing liquid heating unit utilizing a heater, the surface of the heater, which has a temperature much higher than the set temperature at which the temperature of the chemical should be raised, comes into contact with the removing liquid. Will do. At this time, since the removal liquid for removing the reaction products such as the polymer is generally composed of a component obtained by mixing a plurality of chemicals, some of the plurality of chemicals constituting the removal liquid are used. When the temperature is rapidly increased to a temperature equal to or higher than the boiling point in the vicinity of the heater, a bumping phenomenon may occur in which the removal liquid suddenly boils.

[0007] When such bumping occurs, there arises a problem that the gas generated from the removing liquid fills the vicinity of the substrate processing apparatus, or the supply path of the removing liquid is damaged.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and when the temperature of a removing solution composed of a mixture of a plurality of chemicals is raised, the removing solution can be safely raised without bumping. An object of the present invention is to provide a substrate processing apparatus that can be heated.

[0009]

According to a first aspect of the present invention, a thin film formed on a surface of a substrate formed by dry etching using a resist film as a mask is patterned and formed on the surface of the substrate. What is claimed is: 1. A substrate processing apparatus for removing a reaction product by a removing liquid, wherein at least a part of the removing apparatus is formed of a light-transmitting member, and a removing liquid storing section capable of storing the removing liquid therein; A removing liquid heating section having a heating light source for heating the removing liquid in the removing liquid storage section by irradiating the liquid with a light beam through the translucent member;

According to a second aspect of the present invention, in the first aspect of the invention, the removing liquid heating section is disposed in a removing liquid circulation path connected to a removing liquid storage tank for storing the removing liquid. Have been.

According to a third aspect of the present invention, in the first aspect of the present invention, the removing liquid heating unit supplies the removing liquid to the surface of the substrate by treating the removing liquid storage tank for storing the removing liquid. It is arranged between the substrate processing unit.

According to a fourth aspect of the present invention, in the first aspect of the present invention, the removing liquid storage section includes a removing liquid storage tank for storing the removing liquid, and the heating light source is the removing liquid storing tank. A light beam is irradiated to the removal liquid in the inside.

According to a fifth aspect of the present invention, there is provided a substrate processing apparatus for removing an organic substance present on a substrate with a removing liquid,
A removing liquid storage part at least a part of which is formed of a light transmitting member and capable of storing a removing liquid therein, and irradiating a light beam to the removing liquid in the removing liquid storage part via the light transmitting member. And a heating light source for heating the removing liquid in the removing liquid storage section.

According to a sixth aspect of the present invention, in the fifth aspect of the invention, the removing liquid heating section is disposed in a removing liquid circulation path connected to a removing liquid storage tank for storing the removing liquid. Have been.

According to a seventh aspect of the present invention, in the fifth aspect of the present invention, the removing liquid heating section supplies the removing liquid to the surface of the substrate and a removing liquid storage tank for storing the removing liquid. It is arranged between the substrate processing unit.

According to an eighth aspect of the present invention, in the sixth aspect of the present invention, the removing liquid storage section includes a removing liquid storage tank for storing the removing liquid, and the heating light source includes the removing liquid. The removal liquid in the storage tank is irradiated with a light beam.

According to a ninth aspect of the present invention, there is provided a substrate processing apparatus for removing, by a removing solution, a reaction product generated by a change in the quality of a resist, at least a part of which is formed of a light-transmitting member. A removing liquid storage unit capable of storing a removing liquid,
A heating light source for heating the removal liquid in the removal liquid storage section by irradiating the removal liquid in the removal liquid storage section with a light beam through the translucent member; It is characterized by.

According to a tenth aspect of the present invention, in the ninth aspect of the present invention, the removing liquid heating section is disposed in a removing liquid circulation path connected to a removing liquid storage tank for storing the removing liquid. Have been.

According to an eleventh aspect of the present invention, in the ninth aspect of the present invention, the removing liquid heating section supplies the removing liquid to the surface of the substrate by treating the removing liquid storage tank for storing the removing liquid. It is arranged between the substrate processing unit.

In a twelfth aspect of the present invention, in the eleventh aspect of the present invention, the removing liquid storage section includes a removing liquid storage tank for storing the removing liquid.
A light beam is applied to the removing liquid in the removing liquid storage tank.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of a substrate processing apparatus according to an embodiment of the present invention will be described below. This substrate processing apparatus is for removing a polymer as a reaction product from the surface of a silicon semiconductor wafer as a substrate having a thin film formed on its surface.

Here, the thin film is made of, for example, a metal film such as copper, aluminum, titanium, or tungsten, or an insulating film such as a silicon oxide film or a silicon nitride film.

The removing solution used in the substrate processing apparatus is DMF (dimethylformamide), DMSO
A liquid containing an organic alkali liquid such as (dimethylsulfoxide) and hydroxylamine, a liquid containing an inorganic acid such as hydrofluoric acid and phosphoric acid, and a liquid containing an ammonium fluoride-based substance can be used. Further, as other removing liquids, 1-
Methyl-2-pyrrolidone, tetrahydrothiophene 1.1
Liquids including dioxide, isopropanolamine, monoethanolamine, 2- (2aminoethoxy) ethanol, catechol, N-methylpyrrolidone, aromatic diol, tetrachloroethylene, phenol, etc., and more specifically, 1-methyl A mixture of 2-pyrrolidone, tetrahydrothiophene 1.1-dioxide and isopropanolamine, a mixture of dimethylsulfoxide and monoethanolamine, a mixture of 2- (2aminoethoxy) ethanol, hydroxyamine and catechol; A mixed solution of 2- (2aminoethoxy) ethanol and N-methylpyrrolidone, a mixed solution of monoethanolamine, water and an aromatic diol, a mixed solution of tetrachloroethylene and phenol, or the like may be used.

FIG. 1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention.

This substrate processing apparatus includes a substrate processing section 2, a temperature adjusting tank 3, and a temperature adjusting mechanism 4.

The substrate processing section 2 is for supplying a removing liquid for removing a reaction product to the surface of the substrate for processing, and is driven by a motor 22 so as to rotate while holding the substrate W. A chuck 23, a removing liquid supply nozzle 21 for supplying a removing liquid to the surface of the rotating substrate W,
A pipe 25 connecting the temperature adjusting tank 3 and the removing liquid supply nozzle 21, a pump 26 for pumping the removing liquid in the temperature adjusting tank 3 to the removing liquid supply nozzle 21 through the pipe 25, And a pump 27 and a recovery path 28 for recovering the removal liquid captured by the scattering prevention cup 24 in the temperature control tank 3.

In the substrate processing section 2, a pump 26
By driving the liquid, the removal liquid whose temperature is controlled in the temperature adjustment tank 3 is supplied from the removal liquid supply nozzle 21 to the surface of the substrate W that is held and rotated by the spin chuck. Reaction products such as polymers deposited on the side wall of the metal film on the surface of the substrate W are removed by the removing liquid supplied from the removing liquid supply nozzle 21. Then, the removal liquid supplied to the processing of the substrate W and captured by the scattering prevention cup 24 is supplied to the pump 2.
By the operation of 7, the liquid is collected in the temperature adjustment tank 3 through the collection path 28.

The temperature adjusting tank 3 is for storing a removing liquid to be supplied to the substrate W in the substrate processing section 2. A removing liquid is supplied to the temperature adjusting tank 3 from a removing liquid supply unit 10. Further, the temperature adjusting tank 3 includes a temperature sensor 31 for measuring the temperature of the removing liquid stored therein.

The temperature adjusting mechanism 4 is for raising the temperature of the removing liquid in the temperature adjusting tank 3 to a predetermined temperature, and includes a circulating pump 41, a removing liquid heating section 42 according to the present invention, a temperature adjusting tank. 3 is provided with a circulation path 43 for the removal liquid which reaches the temperature adjustment tank 3 again through the circulation pump 41 and the removal liquid heating section 42. The removal liquid in the temperature adjustment tank 3 is heated to a predetermined temperature by the action of the removal liquid heating unit 42 while circulating in the circulation path 43 by driving the circulation pump 4.

FIG. 2 is a sectional view of the removing liquid heating section 42.

The removing liquid heating section 42 is provided in the above-described removing liquid circulating path 43 and is made of a transparent material such as quartz, and can store the removing liquid in its internal space 45. A removing liquid storage section 44 and a halogen lamp 47 disposed in a concave portion 46 formed in the removing liquid storage section 44 are provided. The halogen lamp 47 is provided in the removing liquid storage section 44.
By irradiating the removing liquid in the internal space 45 with a light beam through the translucent removing liquid storage part 44, the removing liquid functions as a heating light source for heating the removing liquid in the internal space 45.

The removal liquid heating section 42 having such a configuration
When the removing liquid is heated by using, the temperature of the removing liquid itself does not rise rapidly because the removing liquid itself absorbs the radiation of the halogen lamp 47 and raises the temperature. For this reason, even when the removal liquid composed of a component obtained by mixing a plurality of chemicals is heated, a bumping phenomenon in which the removal liquid suddenly boils does not occur.

When the processing of the substrate processing apparatus is completed, the operation of raising the temperature of the removing liquid can be safely terminated by turning off the halogen lamp 47. Therefore,
Unlike a heating unit having a heater in a conventional general substrate processing apparatus, there is no danger that the internal temperature of the heating unit rises due to the heat storage phenomenon of the heater.

In the removing liquid heating section 42 shown in FIG. 2, the removing liquid storage section 44 is made of a transparent material such as quartz, but at least a part of the removing liquid storage section 44 is transparent. What is necessary is just to be comprised from an optical member. In other words, any configuration may be used as long as it can irradiate the removing liquid in the removing liquid storage unit 44 with a light beam through the translucent member.

Further, the light-transmitting member is not limited to the above-described quartz, but may be a light-transmitting resin having heat resistance and chemical resistance.

Next, another embodiment of the present invention will be described. FIG. 3 is a schematic diagram of a substrate processing apparatus according to a second embodiment of the present invention. Note that the same members as those of the substrate processing apparatus according to the above-described first embodiment are denoted by the same reference numerals, and detailed description is omitted.

In the above-described substrate processing apparatus according to the first embodiment, the removal liquid circulation path 43 from the temperature adjustment tank 3 to the temperature adjustment tank 3 via the circulation pump 41 and the removal liquid heating unit 42 again is provided separately. A pipe 25 connecting the temperature adjusting tank 3 and the removal liquid supply nozzle 21 of the substrate processing unit 2 is provided;
The removal liquid is supplied to the substrate W using the pipe 25. On the other hand, in the substrate processing apparatus according to the second embodiment, a supply pipe 49 for the removal liquid that connects the temperature adjustment tank 3 and the removal liquid supply nozzle 21 of the substrate processing unit 2 is provided. A pump 41 for pumping the removing liquid into the pump 49
And a removal liquid heating unit 42 according to the present invention.

In the substrate processing apparatus according to the second embodiment, when the removal liquid stored in the temperature adjustment tank 3 is sent to the substrate processing section 2 using the supply pipe 49 of the removal liquid. The removal liquid heating unit 42 shown in FIG. 2 is used to heat the removal liquid.

In the substrate processing apparatus according to the second embodiment, when the removal liquid stored in the temperature adjustment tank 3 is sent to the substrate processing section 2, the removal liquid is heated. Therefore, it is sufficient that the temperature adjustment tank 3 has a rough temperature adjustment function so that the temperature of the removal liquid falls within a predetermined range. Further, instead of the temperature adjustment tank 3, a simple storage tank having no temperature adjustment function may be used.

In the first and second embodiments described above,
The removing liquid heating section 42 is provided in the removing liquid circulation path 43 or the supply pipe 49, and the removing liquid circulation path 43 or the supply pipe 4 is provided.
Although it is configured to heat the removal liquid passing through 9,
The removal liquid in the temperature adjustment tank 3 may be directly heated.

FIG. 4 is an explanatory diagram showing an enlarged part of the temperature adjusting tank 3 of the substrate processing apparatus according to the third embodiment employing such a configuration.

In the substrate processing apparatus according to the third embodiment, the temperature adjusting tank 3 is made of a translucent member such as quartz, and a recess 48 is formed in a part of the temperature adjusting tank 3.
The recess 48 has a configuration in which the halogen lamp 47 is housed. The halogen lamp 47 is a heating light source that directly heats the removing liquid in the temperature adjusting tank 3 by irradiating the removing liquid in the temperature adjusting tank 3 with light rays through the translucent temperature adjusting tank 3. Function as In addition, temperature control tank 3
Functions as a removing liquid storage section according to the present invention.

Even when such a configuration is adopted, the temperature of the removing liquid itself does not rise rapidly because the radiation of the halogen lamp 47 is absorbed by the removing liquid itself and the temperature rises. For this reason, even when the removal liquid composed of a component obtained by mixing a plurality of chemicals is heated, a bumping phenomenon in which the removal liquid suddenly boils does not occur.

In the case of this embodiment as well, it is not necessary that the entire temperature adjusting tank 3 is made of a translucent member such as quartz, and at least a part of the temperature adjusting tank 3 is made of a translucent member. What is necessary is just to be comprised. That is, the temperature adjustment tank 3
Any structure can be used as long as it can irradiate a light beam to the removing liquid through the translucent member.

In the first and third embodiments described above,
The removing liquid in the temperature adjusting tank 3 used for adjusting the temperature of the removing liquid supplied to the substrate W in the substrate processing section 2 is heated by the removing liquid heating section 42 or the like. However,
The present invention may be applied to a substrate processing apparatus that performs a process of removing a reaction product by immersing a substrate W in a removing liquid. In this case, the removing liquid in the processing tank used for immersing and processing the substrate W may be heated by the above-described removing liquid heating unit 42 or the like.

In the above embodiment, the processing liquid such as the removing liquid or the pure water is supplied to at least the center of rotation of the substrate W, and the liquid supplied to the substrate is
Spread evenly around the area. In particular, when the substrate W is rotated while being held horizontally, the liquid is supplied evenly over the entire surface of the substrate W, so that uniform processing can be performed.

In the above embodiment, the processing liquid is supplied to at least the center of rotation of the substrate W while rotating the substrate W. However, the present invention is not limited to supplying the processing liquid to the rotating substrate W. . For example, the processing liquid may be supplied to the center of rotation of the substrate W that is intermittently rotating or rotating. After supplying the processing liquid to the center of the substrate W in a stationary state, the substrate W may be rotated or rotated. The rotation or rotation in this case may be continuous or intermittent.

In the above embodiment, the removal of the polymer generated at the time of dry etching from the substrate subjected to the dry etching step is disclosed. It is not limited to removing the polymer.

For example, the present invention includes the case where the polymer generated during the plasma ashing is removed from the substrate.
Therefore, the present invention includes a case where the polymer generated due to the resist is removed from the substrate in various processes that are not necessarily dry etching.

The present invention is not limited to the removal of only the polymer produced by the dry etching or the plasma ashing, but may be applied to the case where various reaction products derived from the resist are removed from the substrate. Including.

The present invention is not limited to removing the reaction product derived from the resist from the substrate, but also includes removing the resist itself from the substrate.

For example, a resist is applied, a pattern such as a wiring pattern is exposed on the resist, the resist is developed, and a lower layer process (for example, an etching process on a thin film as a lower layer) is performed on a lower layer of the resist. This also includes the case where the lower layer processing is completed for the substrate that has been processed and the unnecessary resist film is removed.

In this case, the unnecessary resist film can be removed, and at the same time, any reaction products generated by the deterioration of the resist film can be removed at the same time, so that the throughput can be improved and the cost can be reduced. Can be reduced. For example, in the above-described lower layer processing, when dry etching is performed on the lower thin film, a reaction product is also generated. Therefore, the resist film itself used for masking the lower layer during the dry etching and the reaction product generated by the deterioration of the resist film can be simultaneously removed.

The present invention is not limited to removing the reaction product derived from the resist or the resist itself from the substrate, but also removes organic substances not derived from the resist, for example, fine contaminants generated from the human body from the substrate. Including.

Further, the spin chuck 23 is a vacuum chuck that sucks the back surface of the substrate with an area smaller than the area of the substrate W, and holds the substrate W in contact with only the back surface of the substrate W. Since the liquid is evenly supplied to the entire surface, particularly the peripheral portion of the surface of the substrate W, the in-plane uniformity of the substrate W in the processing can be ensured.

Similarly, the spin chuck 23 holds the substrate W
Since the substrate W is held in contact only with the rear surface of the substrate W, nothing comes into contact with the peripheral portion of the substrate W. Therefore, the substrate W
When the liquid is shaken off from the substrate W, the liquid is smoothly discharged from the substrate W.

[0057]

According to the first to twelfth aspects of the present invention, at least a part of the liquid removing member is formed of a translucent member, and the liquid removing part is capable of storing the removing liquid therein. Since a removing liquid heating unit having a heating light source for heating the removing liquid in the removing liquid storage unit by irradiating the removing liquid in the removing liquid through the light-transmitting member is provided, a plurality of chemical liquids are mixed. Even when the temperature of the removal liquid composed of the components is increased, it is possible to safely raise the temperature of the removal liquid without causing the bumping phenomenon.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of a removing liquid heating unit 42.

FIG. 3 is a schematic diagram of a substrate processing apparatus according to a second embodiment of the present invention.

FIG. 4 is an explanatory diagram showing an enlarged part of a temperature adjustment tank 3 in a substrate processing apparatus according to a third embodiment of the present invention.

[Explanation of symbols]

 2 Substrate processing unit 3 Temperature adjustment tank 4 Temperature adjustment mechanism 10 Removal liquid supply unit 21 Removal liquid supply nozzle 24 Scatter prevention cup 25 Pipeline 26 Pump 41 Circulation pump 42 Removal liquid heating unit 43 Circulation path 45 Internal space 46 Recess 47 Halogen lamp 48 Recess 49 Supply line W Substrate

Continued on the front page (72) Inventor Tadashi Sasaki 4-chome Tenjin Kitamachi 1-chome, Honkawadori-Terauchi, Kamigyo-ku, Kyoto Dainippon Screen Mfg. Co., Ltd. (72) Inventor Takeshi Yoshida Horikawa-dori, Kamigyo-ku, Kyoto-shi 4-chome Tenjin, Teranouchi 1 1 Kitamachi 1 Dainippon Screen Mfg. Co., Ltd. F-term (reference) 5F043 BB27 EE07 EE08 EE12 EE22 EE24 EE28 EE33 5F046 MA02 MA03 MA10

Claims (12)

[Claims] 1. A substrate processing apparatus for removing a reaction product generated on a surface of a substrate on which a thin film formed on the surface of the substrate is patterned by dry etching using a resist film as a mask, using a removing liquid. A removing liquid storage part at least a part of which is formed of a light-transmitting member and is capable of storing a removing liquid therein; and a light beam passing through the light-transmitting member to the removing liquid in the removing liquid storage part. A substrate processing apparatus, comprising: a removing liquid heating unit having a heating light source for heating the removing liquid in the removing liquid storage unit by irradiating the removing liquid. 2. The substrate processing apparatus according to claim 1, wherein the removing liquid heating unit is disposed in a removing liquid circulating path connected to a removing liquid storage tank that stores the removing liquid. apparatus. 3. The substrate processing apparatus according to claim 1, wherein the removing liquid heating unit includes a removing liquid storage tank that stores the removing liquid and a substrate processing unit that supplies the removing liquid to the surface of the substrate to process the removing liquid. Substrate processing equipment installed between them. 4. The substrate processing apparatus according to claim 1, wherein the removing liquid storage unit includes a removing liquid storage tank that stores the removing liquid, and the heating light source removes the liquid in the removing liquid storage tank. A substrate processing device that irradiates a liquid with light. 5. A substrate processing apparatus for removing an organic substance present on a substrate with a removing liquid, wherein at least a part of the removing apparatus is formed of a light-transmitting member, and a removing liquid storage unit capable of storing the removing liquid therein; A heating light source for heating the removal liquid in the removal liquid storage section by irradiating the removal liquid in the removal liquid storage section with a light beam through the translucent member; A substrate processing apparatus characterized by the above-mentioned. 6. The substrate processing apparatus according to claim 5, wherein the removal liquid heating unit is disposed in a removal liquid circulation path connected to a removal liquid storage tank that stores the removal liquid. apparatus. 7. The substrate processing apparatus according to claim 5, wherein the removing liquid heating unit includes a removing liquid storage tank that stores the removing liquid and a substrate processing unit that supplies the removing liquid to the surface of the substrate to process the removing liquid. Substrate processing equipment installed between them. 8. The substrate processing apparatus according to claim 6, wherein the removing liquid storage section includes a removing liquid storage tank that stores the removing liquid, and the heating light source removes the liquid in the removing liquid storage tank. A substrate processing device that irradiates a liquid with light. 9. A substrate processing apparatus for removing, by a removing liquid, a reactive product generated by a change in the quality of a resist, wherein at least a part of the substrate processing apparatus is formed of a light-transmitting member, and the removing liquid can be stored therein. Removal liquid heating comprising: a liquid storage section; and a heating light source for heating the removal liquid in the removal liquid storage section by irradiating the removal liquid in the removal liquid storage section with a light beam through the translucent member. A substrate processing apparatus comprising a unit. 10. The substrate processing apparatus according to claim 9, wherein the removal liquid heating unit is disposed in a removal liquid circulation path connected to a removal liquid storage tank that stores the removal liquid. apparatus. 11. The substrate processing apparatus according to claim 9, wherein the removing liquid heating unit includes a removing liquid storage tank that stores the removing liquid and a substrate processing unit that supplies the removing liquid to the surface of the substrate to process the removing liquid. Substrate processing equipment installed between them. 12. The substrate processing apparatus according to claim 11, wherein the removing liquid storage unit includes a removing liquid storage tank that stores the removing liquid, and the heating light source removes the liquid in the removing liquid storage tank. A substrate processing device that irradiates a liquid with light.