JP2002184702A - Substrate treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the in-plane uniformity of the substrate treatment by means of a substrate treating device by making the concentration distribution of a reactive gas uniform in a reaction chamber. SOLUTION: In the substrate treating device which treats a substrate by introducing the reactive gas to the reaction chamber, the introducing position of the source gas is made rotatable relatively to a substrate 13 in a plane parallel to the surface of the substrate 13.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for manufacturing a semiconductor device by performing a required process such as formation of a thin film, diffusion of impurities, and etching on the surface of a substrate such as a silicon wafer.

[0002]

2. Description of the Related Art When a thin film is formed on a substrate surface,
The reaction gas is supplied and heated, or the plasma is generated to activate the reaction gas and react with the substrate.

[0003] Referring to FIG. 3, a main part of a conventional substrate processing apparatus will be described.

The inside of the vacuum vessel 1 is a reaction chamber,
A shower head 2 is provided above, and the inside of the reaction chamber is defined by a gas reservoir 3 and a reaction section 4 by the shower head 2. A gas introduction port 5 communicates with the gas reservoir 3, and the gas introduction port 5 is connected to a reaction gas supply source and an inert gas supply source (not shown). The shower head 2 is provided with a large number of gas dispersion holes 6. A substrate loading / unloading port 11 which is opened and closed by a gate valve (not shown) is provided on a side wall of the vacuum vessel 1.

[0005] A susceptor 7 is provided so as to be able to move up and down opposite to the shower head 2, and a plate heater 8 is provided below the susceptor 7 so as to be able to move up and down. The plate heater 8 and the susceptor 7 can be moved up and down independently.

A susceptor holder 9 having the susceptor 7 as a top plate is provided below the susceptor 7, and the plate heater 8 is provided in the susceptor holder 9.

Hereinafter, the operation will be described.

[0008] With the susceptor holder 9 lowered,
The substrate 13 is carried in by the substrate carrying device (not shown) through the substrate carrying-in / out opening 11 and is placed on the susceptor 7. The susceptor 7 is heated by the plate heater 8, and the substrate 13 is further heated by the susceptor 7.

With the substrate 13 heated to the processing temperature, a reaction gas is introduced into the gas reservoir 3 from the gas introduction port 5. The reaction gas flows into the gas reservoir 3 to expand its volume, reduce the flow velocity, equalize the velocity distribution, and flow into the reaction section 4 through the gas dispersion holes 6.

The susceptor holder 9 is raised to bring the susceptor 7 close to the shower head 2. When high-frequency power is applied between the shower head 2 and the susceptor 7, plasma is generated and a reaction gas is activated, and the activated gas forms a film or etches on the surface of the substrate 13. You. Alternatively, the reaction gas is heated and activated, and a process such as film formation is performed on the substrate surface.

The susceptor holder 9 descends on the processed substrate 13, the inside of the vacuum vessel 1 is replaced by an inert gas, and the substrate 13 is carried out through the substrate carry-in / out port 11 by a substrate carrying device (not shown).

[0012]

In the above-mentioned conventional substrate processing apparatus, a reaction gas is introduced from the center of the gas reservoir 3 through the gas introduction port 5 and is dispersed by the gas dispersion holes 6 to form the reaction gas. 4. The gas reservoir 3 is provided, and the gas dispersion holes 6 are formed on the entire surface of the shower head 2 so that the flow rate of the reaction gas into the reaction unit 4 is made uniform.
Again, it is inevitable that the inflow velocity is high at the center of the reaction section 4 and low at the periphery. The non-uniformity of the inflow rate of the reaction gas appears as a non-uniformity of the concentration distribution of the reaction gas in the reaction part 4, which causes in-plane non-uniformity of the processing of the substrate 13, for example, a non-uniform film thickness. Was.

As means for making the concentration distribution of the reaction gas in the reaction section 4 uniform, various means such as changing the density of the gas dispersion holes 6 between the center and the periphery or changing the hole diameter are also available. Although taken, it is not an effective means for making the concentration distribution of the reaction gas uniform.

The present invention has been made in view of the above circumstances, and has an object to make the concentration distribution of a reaction gas in a reaction chamber uniform and to improve in-plane uniformity of substrate processing.

[0015]

SUMMARY OF THE INVENTION The present invention provides a substrate processing apparatus for processing a substrate by introducing a reaction gas into a reaction chamber.
The present invention relates to a substrate processing apparatus in which a reaction gas introduction position is rotatable relative to a substrate in a plane parallel to the substrate surface.

[0016]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a cross section of a main part of the present embodiment. In the figure, the same reference numerals are given to the same components as those shown in FIG.

The substrate transport device for loading and unloading the substrate 13 such as the shower head 2, the plate heater 8, the susceptor 7, the susceptor holder 9, and the like are the same as those in the conventional example.

A gas introduction port support mechanism 15 is provided in the vacuum vessel 1 so as to face the shower head 2 via the gas reservoir 3 in an airtight manner.

Hereinafter, the gas introduction port support mechanism 15 will be described.

A fixed ring frame 16 is provided at the upper end of the vacuum vessel 1.
Is provided in an airtight manner. A large disk 17 is rotatably provided on the fixed ring frame 16 via a bearing 18, and a small disk 19 is rotatably provided on the large disk 17 via a bearing 20. Between the plates 17 and between the large disk 17 and the small disk 1
The gaps between the nine are hermetically sealed by a required means such as a magnetic shield.

A port holder 21 is rotatably provided at an eccentric position of the small disk 19 via a bearing 23, and the space between the port holder 21 and the small disk 19 is hermetically sealed by a required means such as a magnetic shield. I do.

A gas introduction port 5 is hermetically attached to the port holder 21. The gas introduction port 5 is connected to a reaction gas supply source and an inert gas supply source (not shown) via a flexible tube 22.

Although not particularly shown, a revolving drive mechanism is connected to the large disc 17 so that the large disc 17 is rotated (hereinafter, revolved) by the revolving drive mechanism.
Further, a rotation driving mechanism is connected to the small disk 19, and the small disk 19 is rotated (hereinafter, rotation) by the rotation driving mechanism. The gas introduction port 5 passes through the center of rotation of the large disk 17 due to the rotation of the small disk 19.

Although a magnetic shield is employed for the seal of the rotating part, a seal material such as an O-ring may be used.

The operation will be described below.

First, the large disk 17 is revolved while the small disk 19 is fixed. Due to the revolution of the large disk 17, the gas introduction port 5 rotates about the center O of the large disk 17 as a rotation center. The radius of rotation of the gas introduction port 5 is maximum when the gas introduction port 5 is on the radius,
The minimum is that the gas inlet port 5 is
When the center coincides with the center O of 7, the maximum is in the state of being on the outer peripheral side P.

In FIG. 2, a represents the locus of revolution of the gas introduction port 5 when the large disk 17 revolves, and b represents the small disk 1.
Locus of rotation of the gas introduction port 5 when the cylinder 9 is rotated, O
Indicates a minimum turning radius position, and P indicates a maximum turning radius position.

Further, by rotating the small disk 19, the radius of rotation of the gas introduction port 5 changes continuously from the minimum to the maximum.

When supplying the reaction gas, the large disc 1
By combining the revolution of 7 and the rotation of the small disk 19, the gas introduction position into the gas reservoir 3 can be changed.

Hereinafter, the mode of gas introduction will be described.

First, the small disk 19 is rotated, and the gas introduction port 5 is set at a required rotational radius position. For example, it is positioned between the maximum and the minimum. Next, the large disk 17 is revolved while introducing a reaction gas from the gas introduction port 5. The reaction gas is not distributed at one place but is distributed and supplied along the circumference of the rotation. Therefore, the concentration distribution of the gas in the reaction section 4 flowing from the gas reservoir 3 through the gas dispersion holes 6 is made uniform without bias. Gas introduction port 5 at this time
Is determined by experiments or the like at the position where the reaction gas concentration becomes the most uniform. When the gas introduction port 5 revolves and rotates, the flexible tube 22 is not twisted because the gas introduction port 5 is attached to the rotatable port holder 21.

Next, another embodiment will be described.

Each time the large disk 17 makes one rotation, the small disk 19 is rotated by a required angle.

Accordingly, the reaction gas supply position of the gas introduction port 5 follows a multiple concentric trajectory.

Since the supply position of the reaction gas moves uniformly over the entire surface of the shower head 2, the concentration distribution of the reaction gas in the reaction section 4 is further uniformed.

Next, another embodiment will be described.

The small disk 19 is rotated while the large disk 17 revolves. In this case, the supply position of the reaction gas changes in both the radial direction and the circumferential direction, and the concentration of the reaction gas flowing out to the reaction section 4 becomes uniform. The large disc 1
The rotation ratio of the revolution of 7 and the rotation of the small disk 19 is an optimum value obtained by experiments or the like.

Although the nozzle is rotated in the embodiment, the nozzle may be fixed and the susceptor (wafer) may be rotated.

[0040]

As described above, according to the present invention, in a substrate processing apparatus for processing a substrate by introducing a reactive gas into a reaction chamber, the position where the reactive gas is introduced is in a plane parallel to the substrate surface. Relative rotation with respect to the reaction gas, the uniformity of the concentration in the reaction gas introduction state is improved, the uniformity of the reaction gas concentration in the reaction chamber is further improved, the substrate processing quality is improved, and the yield can be improved. Demonstrate excellent effects such as.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a main part of an embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a trajectory of a supply position of a reactive gas in the first embodiment.

FIG. 3 is a sectional view showing a main part of a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Shower head 3 Gas storage part 4 Reaction part 5 Gas introduction port 6 Gas dispersion hole 13 Substrate 17 Large disk 19 Small disk 21 Port holder 22 Flexible tube

Claims (1)

[Claims] In a substrate processing apparatus for processing a substrate by introducing a reaction gas into a reaction chamber, a position where the reaction gas is introduced can be rotated relative to the substrate in a plane parallel to the substrate surface. Characteristic substrate processing equipment.