JP2002180244A - Sputtering target sintered material for forming photorecording medium protective layer exhibiting excellent cracking damage resistance in high output sputtering condition - Google Patents

Sputtering target sintered material for forming photorecording medium protective layer exhibiting excellent cracking damage resistance in high output sputtering condition

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Publication number
JP2002180244A
JP2002180244A JP2000383021A JP2000383021A JP2002180244A JP 2002180244 A JP2002180244 A JP 2002180244A JP 2000383021 A JP2000383021 A JP 2000383021A JP 2000383021 A JP2000383021 A JP 2000383021A JP 2002180244 A JP2002180244 A JP 2002180244A
Authority
JP
Japan
Prior art keywords
protective layer
sputtering
forming
target material
medium protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000383021A
Other languages
Japanese (ja)
Inventor
Terushi Mishima
昭史 三島
Kazuo Watanabe
和男 渡辺
Rie Mori
理恵 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP2000383021A priority Critical patent/JP2002180244A/en
Publication of JP2002180244A publication Critical patent/JP2002180244A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a target material for forming a photorecording medium protective layer which is consisting of a hot press sintered body of a powdery mixture having a blended composition consisting of 6 to 40% SiO2 and 1 to 6% MgO, and the balance ZnS and exhibits excellent cracking damage resistance in a high output sputtering condition. SOLUTION: The target material for forming a photorecording medium protective layer is consisting of a hot press sintered body of a powdery mixture having a blended composition consisting of, by mol, 6 to 40% silicon oxide and 1 to 6% magnesium oxide, and the balance zinc sulfide.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、半導体レーザー
などの光ビームを用いて、情報の記録や再生、さらに消
去を行う光ディスクなどの光記録媒体の構成層である保
護層をスパッタリング法にて形成するのに用いられるス
パッタリングターゲット焼結材(以下、ターゲット材と
云う)に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a protective layer, which is a constituent layer of an optical recording medium such as an optical disk, on which information is recorded, reproduced, and erased by using a light beam such as a semiconductor laser by a sputtering method. The present invention relates to a sputtering target sintering material (hereinafter, referred to as a target material) used for the sputtering.

【0002】[0002]

【従来の技術】一般に、上記の光ディスクなどの光記録
媒体が、基本的に例えばポリカーボネイトの基板と、こ
れの表面にいずれもスパッタリング法により形成された
下部保護層、記録層、上部保護層、および反射層の構成
層からなることが知られている。また、上記の光記録媒
体が、例えば図1に概略縦断面図で示される高周波マグ
ネトロンスパッタリング装置を用い、まず、内部を循環
する冷却水によって冷却されたバッキングプレートに所
定の組成をもったターゲット材を取り付け、装置内を真
空排気装置にて排気した後、Arガスを導入して所定の
スッパッタガス圧に保持し、この状態でマッチングボッ
クスを介して設置された高周波電源にてターゲット材に
高周波電力を印加し、これによってターゲット材と、こ
れに対向し、かつ所定の間隔を設けて配置した、例えば
ポリカーボネイトの基板との間にプラズマを発生させ、
このプラズマ中のArイオンをターゲット材の表面に衝
突させてスパッタし、スパッタ粒子を基板表面にそれぞ
れ構成層として蒸着することにより形成されることも知
られている。
2. Description of the Related Art Generally, an optical recording medium such as the above-mentioned optical disk is basically composed of, for example, a polycarbonate substrate, and a lower protective layer, a recording layer, an upper protective layer, and a lower protective layer all formed on the surface of the substrate by a sputtering method. It is known that the reflective layer comprises a constituent layer. In addition, the above-mentioned optical recording medium uses, for example, a high-frequency magnetron sputtering apparatus shown in a schematic longitudinal sectional view in FIG. 1, and firstly a target material having a predetermined composition is formed on a backing plate cooled by cooling water circulating inside. After the inside of the apparatus is evacuated by a vacuum evacuation apparatus, Ar gas is introduced and maintained at a predetermined sputter gas pressure, and in this state, high-frequency power is applied to the target material by a high-frequency power supply installed through a matching box. Applied, thereby generating a plasma between the target material and the substrate, for example, a polycarbonate substrate opposed to the target material and arranged at a predetermined interval,
It is also known that Ar ions in the plasma collide against the surface of the target material to be sputtered, and sputtered particles are formed on the substrate surface by vapor deposition as constituent layers.

【0003】さらに、上記の光記録媒体の構成層である
保護層(下部保護層および上部保護層)の形成に、例え
ば特開平6−65725号公報に記載されるように、例
えば原料粉末として、いずれも10μm以下の平均粒径
および99.9質量%以上の純度を有する酸化けい素
(以下、SiO2で示す)粉末および硫化亜鉛(以下、
ZnSで示す)粉末を用い、これら原料粉末を、モル%
で(以下、%はモル%を示す)、 SiO2:6〜40%、 ZnS:残り、 の割合に配合し、混合した後、ホットプレス焼結するこ
とにより製造されたターゲット材が用いられていること
も知られている。
Further, as described in JP-A-6-65725, for example, as a raw material powder, a protective layer (a lower protective layer and an upper protective layer) as a constituent layer of the optical recording medium is formed. Each of them has a silicon oxide (hereinafter, referred to as SiO 2 ) powder having an average particle diameter of 10 μm or less and a purity of 99.9 mass% or more, and zinc sulfide (hereinafter, referred to as SiO 2 ).
These raw material powders are represented by mol%
In (hereinafter,% indicates the mol%), SiO 2: 6~40% , ZnS: rest, formulated in proportions, after mixing, the target material is used which is produced by hot press sintering It is also known that

【0004】[0004]

【発明が解決しようとする課題】一方、近年の上記の光
ディスクなどの光記録媒体の生産性の向上に対する要求
は強く、これに伴い、構成層の成膜速度も高速化の傾向
にあり、しかし高速成膜を行うためにはターゲット材に
印加する電力を高くして高出力スパッタ条件とする必要
があるが、特に上記の従来ターゲット材を用いて保護層
を形成するに際して、これの高速成膜を行う目的でスパ
ッタ条件を高出力スパッタ条件とすると、ターゲット材
に割れが発生し易くなり、比較的短時間で使用寿命に至
るのが現状である。
On the other hand, there is a strong demand for improvement in productivity of optical recording media such as the above-mentioned optical discs in recent years, and accordingly, the film forming speed of the constituent layers tends to be increased. In order to perform high-speed film formation, it is necessary to increase the power applied to the target material to achieve high-output sputtering conditions. In particular, when forming the protective layer using the above-described conventional target material, the high-speed film formation is performed. If the sputtering conditions are set to the high-power sputtering conditions for the purpose of performing the above, cracks are likely to occur in the target material, and the service life is currently reached in a relatively short time.

【0005】[0005]

【課題を解決するための手段】そこで、本発明者らは,
上述の観点から、上記の光記録媒体保護層形成用の従来
ターゲット材に着目し、これの耐割損性向上を図るべく
研究を行った結果、 (a)上記の従来ターゲット材が高速成膜を行う目的で
印加した高スパッタ電力で割れが発生し易いのは、構成
成分であるZnSが同じく構成成分であるSiO2に比
して高いスパッタ衝撃に対してきわめて脆い性質を有す
ることに原因があること。すなわち高スパッタ電力の印
加でターゲット材表面が受ける高いスパッタ衝撃によっ
てZnSに無数の微細なクラックが発生し、この微細な
クラックが経時的に大きな割れに発展し、この割れで使
用寿命に至ること。
Means for Solving the Problems Therefore, the present inventors have proposed:
In view of the above, the present inventors focused on the above-mentioned conventional target material for forming the optical recording medium protective layer, and conducted research to improve the crack resistance thereof. Cracks are likely to occur due to the high sputtering power applied for the purpose of carrying out the process, because ZnS, which is a component, has an extremely brittle property against high sputtering impact as compared with SiO 2 which is also a component. There is. That is, countless fine cracks are generated in ZnS due to high sputter impact applied to the target material surface by application of high sputtering power, and these fine cracks develop into large cracks over time, and the cracks extend the service life.

【0006】(b)上記の従来ターゲット材に、酸化マ
グネシウム(以下、MgOで示す)を含有させ、ZnS
およびSiO2に加えてMgOが共存した組織にする
と、前記MgOがZnSの受ける高いスパッタ衝撃を著
しく緩和し、これによってZnSにおける微細クラック
の発生が抑制され、前記SiO2と同じくMgO自身の
もつすぐれた耐スパッタ衝撃性と相俟って、この結果の
ターゲット材は高出力スパッタ条件下ですぐれた耐割損
性を発揮するようになり、この場合MgOのターゲット
材における含有割合が配合割合で6%以下であれば光記
録媒体の構成層である保護層(下部保護層および上部保
護層)の特性に何らの悪影響も及ぼさないこと。以上
(a)および(b)に示される研究結果を得たのであ
る。
(B) The above-mentioned conventional target material contains magnesium oxide (hereinafter referred to as MgO),
And if, in addition to SiO 2 to tissue MgO coexist, the MgO is alleviated significantly higher sputtering shock experienced by the ZnS, which occurrence of fine cracks in the ZnS is suppressed by excellent also possessed MgO itself and the SiO 2 In combination with the sputtering resistance, the resulting target material exhibits excellent cracking resistance under high-power sputtering conditions. In this case, the content of MgO in the target material is 6% by weight. % Or less, it has no adverse effect on the characteristics of the protective layers (lower protective layer and upper protective layer) that are constituent layers of the optical recording medium. The research results shown in (a) and (b) above were obtained.

【0007】この発明は、上記の研究結果に基づいてな
されたものであって、SiO2:6〜40%、MgO:
1〜6%、ZnS:残り、からなる配合組成を有する混
合粉末のホットプレス焼結体で構成してなる、高出力ス
パッタ条件ですぐれた耐割損性を発揮する光記録媒体保
護層形成用ターゲット材に特徴を有するものである。
[0007] This invention was made based on the above findings, SiO 2: 6~40%, MgO :
1 to 6%, ZnS: for forming an optical recording medium protective layer exhibiting excellent breakage resistance under high-power sputtering conditions, comprising a hot-pressed sintered body of a mixed powder having a compounding composition of the remainder. The target material has characteristics.

【0008】なお、光記録媒体保護層形成用ターゲット
材において、SiO2の含有割合を配合割合で6〜40
%にしたのは以下に示す理由からである。すなわち、Z
nSは、光記録媒体保護層に要求される高い光屈折率と
光透過率、さらに耐熱性を具備することから、光記録媒
体保護層の主要成分として用いられているが、反面Zn
S単独で例えば光ディスクの保護層を形成した場合、内
部応力の高い保護層となってしまい、この状態で前記光
ディスクに記録のためのレーザー照射を行うと、前記レ
ーザー照射に伴う急熱・急冷によって前記保護層に割れ
が発生し易いものとなる。そこで、光記録媒体保護層で
はZnSにSiO2を含有させて、保護層中の残留内部
応力を低減するようにしている。したがって、ターゲッ
ト材におけるSiO2の配合割合が6%未満では、光記
録媒体保護層の含有割合も6%未満となってしまい、前
記保護層における内部応力の発生を抑制する作用が不充
分となり、一方その含有割合が40%を超えると、同じ
く光記録媒体保護層の含有割合も40%を超えて高くな
ってしまい、ZnSによってもたらされる上記の特性に
低下傾向が現れるようになることから、その配合割合を
6〜40%、望ましくは15〜30%と定めた。
In the target material for forming the protective layer of the optical recording medium, the content ratio of SiO 2 is 6 to 40
The percentage is set for the following reason. That is, Z
nS is used as a main component of the optical recording medium protective layer because it has a high light refractive index and light transmittance required for the optical recording medium protective layer and further has heat resistance.
For example, when a protective layer of an optical disk is formed by S alone, it becomes a protective layer having a high internal stress, and when laser irradiation for recording is performed on the optical disk in this state, rapid heating and quenching accompanying the laser irradiation cause Cracking is likely to occur in the protective layer. Therefore, in the optical recording medium protective layer, ZnS is made to contain SiO 2 to reduce the residual internal stress in the protective layer. Therefore, when the content of SiO 2 in the target material is less than 6%, the content of the optical recording medium protective layer is also less than 6%, and the effect of suppressing the generation of internal stress in the protective layer becomes insufficient. On the other hand, if the content exceeds 40%, the content of the optical recording medium protective layer also becomes higher than 40%, and the above-mentioned characteristics brought by ZnS tend to decrease. The mixing ratio was determined to be 6 to 40%, desirably 15 to 30%.

【0009】さらに、上記ターゲット材のMgOの配合
割合を1〜6%にしたのは、その配合割合が1%未満で
は、上記の通りZnSに対するスパッタ衝撃緩和作用を
十分に発揮することができず、一方その配合割合が6%
を超えると、光記録媒体保護層の含有割合も6%を超え
て高くなってしまい、ZnSによってもたらされる上記
の特性に低下傾向が現れるようになるという理由からで
あり、望ましくは2〜4%とするのがよい。
Furthermore, the reason why the mixing ratio of MgO in the target material is set to 1 to 6% is that if the mixing ratio is less than 1%, the effect of alleviating sputtering impact on ZnS cannot be sufficiently exhibited as described above. , While its proportion is 6%
Is more than 6%, the content ratio of the protective layer of the optical recording medium becomes higher than 6%, and the above-mentioned characteristics brought by ZnS tend to decrease. It is good to do.

【0010】[0010]

【発明の実施の態様】つぎに、この発明の光記録媒体保
護層形成用ターゲット材を実施例により具体的に説明す
る。原料粉末として、3μmの平均粒径を有する純度:
99.99%以上のZnS粉末、2.5μmの平均粒径
を有する純度:99.9%以上のSiO2粉末、および
0.1μmの平均粒径を有する純度:99.9%以上の
MgO粉末を用意し、これら原料粉末を表1に示される
配合割合に配合し、これをボールミルにてヘキサン存在
下で4時間混合し、混合後ホットプレート上で80℃の
温度で乾燥し、さらに400℃で乾燥し、乾燥後の混合
粉末を黒鉛型に充填した状態でホットプレス装置に装入
し、雰囲気圧力:1.3Paの真空中、温度:1373
K、圧力:34.3MPa、保持時間:6時間の条件で
焼結することにより実質的に配合組成と同じ組成を有
し、直径:125mm×厚さ:5mmの寸法をもったホ
ットプレス焼結体からなる本発明ターゲット材1〜9従
来ターゲット材1〜5をそれぞれ製造した。
Next, the target material for forming an optical recording medium protective layer according to the present invention will be described in detail with reference to examples. Purity having an average particle size of 3 μm as raw material powder:
99.99% or more ZnS powder, purity having an average particle size of 2.5 μm: SiO 2 powder of 99.9% or more, and MgO powder having an average particle size of 0.1 μm: 99.9% or more Was prepared, and these raw material powders were mixed in the mixing ratio shown in Table 1, and mixed in a ball mill in the presence of hexane for 4 hours. After mixing, the mixture was dried on a hot plate at a temperature of 80 ° C., and further mixed at 400 ° C. In a state where the mixed powder after drying is filled in a graphite mold, it is charged into a hot press apparatus, and the atmosphere pressure is 1.3 Pa in a vacuum and the temperature is 1373.
K, pressure: 34.3 MPa, holding time: 6 hours. Hot press sintering having substantially the same composition as the composition by sintering for 6 hours, and having dimensions of diameter: 125 mm x thickness: 5 mm. Inventive target materials 1 to 9 each comprising a body were produced, respectively.

【0011】ついで、この結果得られた本発明ターゲッ
ト材1〜9および従来ターゲット材1〜5について、光
記録媒体保護層の特性評価基準となる光屈折率および光
透過率に及ぼす影響を調べた。すなわち、上記の本発明
ターゲット材1〜9および従来ターゲット材1〜5のそ
れぞれを、無酸素銅製の水冷バッキングプレートにハン
ダ付けした状態で、図1に示される構造をもった高周波
マグネトロンスパッタリング装置に装着し、まず装置内
を真空排気装置にて6.7×10-5Paの真空雰囲気と
した後、Arガスを導入して装置内雰囲気を0.2Pa
のスパッタガス圧とし、引き続いて高周波電源よりマッ
チングボックスを介してターゲット材に1000Wのス
パッタ電力を印加して、前記ターゲット材と対向し、か
つ50mmの間隔を設けて平行配置した直径:30mm
×厚さ:0.5mmのガラス基板と前記ターゲット材間
にプラズマを発生させ、プラズマ中のArイオンを前記
ターゲット材の表面に衝突させて前記ターゲット材をス
パッタし、スパッタ粒子を前記基板表面に蒸着すること
により厚さ:90nmの光記録媒体保護層を形成した。
この結果形成された光記録媒体保護層の光屈折率および
光透過率を評価する目的で、波長:633nmのレーザ
ー光を用い、屈折率および消衰係数を測定した。この測
定結果を表1に示した。
Next, the effects of the resulting target materials 1 to 9 of the present invention and the conventional target materials 1 to 5 on the light refractive index and light transmittance, which are criteria for evaluating the characteristics of the protective layer of the optical recording medium, were examined. . That is, the above-described target materials 1 to 9 of the present invention and the conventional target materials 1 to 5 were soldered to a water-cooled backing plate made of oxygen-free copper, and then applied to a high-frequency magnetron sputtering apparatus having a structure shown in FIG. At first, the inside of the apparatus was set to a vacuum atmosphere of 6.7 × 10 −5 Pa by a vacuum exhaust device, and then the atmosphere in the apparatus was changed to 0.2 Pa by introducing Ar gas.
Then, a sputtering power of 1000 W is applied to the target material from a high-frequency power source through a matching box from a high-frequency power supply, and the diameter of the target material is 30 mm, opposed to the target material and arranged in parallel at a distance of 50 mm.
X Thickness: Plasma is generated between a glass substrate having a thickness of 0.5 mm and the target material, and Ar ions in the plasma collide with the surface of the target material to sputter the target material. An optical recording medium protective layer having a thickness of 90 nm was formed by vapor deposition.
For the purpose of evaluating the light refractive index and light transmittance of the optical recording medium protective layer formed as a result, the refractive index and the extinction coefficient were measured using a laser beam having a wavelength of 633 nm. The measurement results are shown in Table 1.

【0012】ついで、上記の各種ターゲット材の耐割損
性を評価する目的で、ターゲット材へのスパッタ電力の
印加条件を、上記の1000Wから200Wづつ上げて
行き、この間上昇スパッタ電力毎に1分間保持する条件
とする以外は、上記の光記録媒体保護層形成条件と同一
の条件でスパッタを行い、前記ターゲット材に割れが発
生した時点の印加スパッタ電力(割れ発生臨界スパッタ
電力)を測定した。この測定結果を表1も示した。な
お、表1には上記ターゲット材の理論密度比も併せて示
した。
Next, in order to evaluate the crack resistance of the various target materials, the conditions for applying the sputtering power to the target material are increased by 200 W from the above-mentioned 1000 W in increments of 200 W. Sputtering was performed under the same conditions as those for forming the optical recording medium protective layer except that the conditions were maintained, and the applied sputter power (crack generation critical sputter power) at the time when the target material cracked was measured. Table 1 also shows the measurement results. Table 1 also shows the theoretical density ratio of the target material.

【0013】[0013]

【表1】 [Table 1]

【0014】[0014]

【発明の効果】表1に示される結果から、本発明ターゲ
ット材1〜9は、いずれもMgOの含有によって、Mg
Oを含有しない従来ターゲット材1〜5に比して著しく
高い割れ発生臨界スパッタ電力値を示し、これはスパッ
タ条件を高出力スパッタ条件としても割損の発生が抑制
され、保護層の高速成膜性を可能とすることを示すもの
であり、さらに本発明ターゲット材1〜9を用いて形成
された光記録媒体保護層の屈折率および消衰係数と前記
従来ターゲット材1〜5を用いて形成されたそれとの間
にほとんど変化が見られず、これはMgOの含有によっ
て光記録媒体保護層の特性が損なわれることがないこと
を示すものである。上述のように、この発明のターゲッ
ト材は、高出力スパッタの負荷によっても割れの発生が
抑制され、すぐれた耐割損性を示すことから、従来光記
録媒体保護層と同等の特性を具備した保護層の高速成膜
を可能とし、生産性の向上に寄与するものである。
According to the results shown in Table 1, all of the target materials 1 to 9 of the present invention have MgO content due to the inclusion of MgO.
It shows a significantly higher critical sputtering power value for crack generation as compared with the conventional target materials 1 to 5 containing no O, which suppresses the occurrence of breakage even when the sputtering conditions are set to high-power sputtering conditions, and enables high-speed deposition of the protective layer. And the refractive index and extinction coefficient of the optical recording medium protective layer formed using the target materials 1 to 9 of the present invention and the conventional target materials 1 to 5 There was almost no change between the measured values and the results, indicating that the characteristics of the optical recording medium protective layer were not impaired by the inclusion of MgO. As described above, the target material of the present invention has the same characteristics as those of the conventional optical recording medium protective layer because the generation of cracks is suppressed even by the load of high-power spatter, and it exhibits excellent breakage resistance. This enables the high-speed deposition of the protective layer and contributes to an improvement in productivity.

【図面の簡単な説明】[Brief description of the drawings]

【図1】高周波マグネトロンスパッタリング装置を例示
する概略縦断面図である。
FIG. 1 is a schematic longitudinal sectional view illustrating a high-frequency magnetron sputtering apparatus.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 森 理恵 埼玉県大宮市北袋町1−297 三菱マテリ アル株式会社総合研究所内 Fターム(参考) 4G030 AA07 AA37 AA56 BA01 GA29 4K029 AA11 BA41 BA43 BA46 BA64 BB02 BC08 BD12 CA05 DC05 DC09 5D029 LA17 5D121 AA04 EE09 EE11  ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Rie Mori 1-297 Kitabukuro-cho, Omiya-shi, Saitama F-term in Mitsubishi Materials Research Laboratory (reference) 4G030 AA07 AA37 AA56 BA01 GA29 4K029 AA11 BA41 BA43 BA46 BA64 BB02 BC08 BD12 CA05 DC05 DC09 5D029 LA17 5D121 AA04 EE09 EE11

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 モル%で、 酸化けい素:6〜40%、 酸化マグネシウム:1〜6%、 硫化亜鉛:残り、 からなる配合組成を有する混合粉末のホットプレス焼結
体で構成したことを特徴とする、高出力スパッタ条件で
すぐれた耐割損性を発揮する光記録媒体保護層形成用ス
パッタリングターゲット焼結材。
1. A hot-press sintered body of a mixed powder having a composition of mol%, silicon oxide: 6 to 40%, magnesium oxide: 1 to 6%, zinc sulfide: remaining, Characterized by a sputtering target sintered material for forming an optical recording medium protective layer, which exhibits excellent crack resistance under high output sputtering conditions.
JP2000383021A 2000-12-18 2000-12-18 Sputtering target sintered material for forming photorecording medium protective layer exhibiting excellent cracking damage resistance in high output sputtering condition Withdrawn JP2002180244A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011038184A (en) * 2010-09-02 2011-02-24 Jx Nippon Mining & Metals Corp Sputtering target and thin film for optical information-recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011038184A (en) * 2010-09-02 2011-02-24 Jx Nippon Mining & Metals Corp Sputtering target and thin film for optical information-recording medium

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