JP2002180238A - Film depositing apparatus, film depositing method, optical member, illuminating optical system and exposure apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film depositing apparatus and a film method, by which a high precision film having a desired film thickness distribution on the inside surface of a hollow member is deposited, and to provide an optical member having the film deposited with a high precision on the inside surface to have a desired film thickness distribution and having high reflectance, an illuminating optical system for illuminating using the optical member and an exposure apparatus having the illuminating optical system. SOLUTION: A hollow integrator 100 is firmly grasped by a chuck 110 having a center axis 102 in common, gas to be a raw material for the film is filled inside by a gaseous starting material feed pipe 120 and a gas discharge pipe 122, a light guide system 124 and an imaging optical system 126, which are film depositing means, are arranged and the film is deposited locally on the inside surface of the integrator 100 by the film depositing means. The film depositing means are fixed to a part out of a stage, the integrator is rotatable around the center axis 102 with respect to the film depositing means and also moves in the center axis 102 direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used in a lithography process for manufacturing a micro device (semiconductor device, imaging device, liquid crystal display device, thin film magnetic head, CCD device, etc.) The present invention relates to an illumination optical system and an optical member suitable for an apparatus, and a film forming method and a film forming apparatus suitable for manufacturing the optical member.

[0002]

2. Description of the Related Art In recent years, the wavelength of an exposure light source used in an exposure apparatus for projecting a pattern onto a substrate has been shortened as the pattern of an integrated circuit has become finer. The mainstream of the exposure light source is shifting from i-line (wavelength 365 nm) to KrF excimer laser (wavelength 248 nm). ArF excimer laser (wavelength 193 nm) has also entered the stage of practical use.
Furthermore, an F ₂ excimer laser (wavelength 157 nm), Ar
₂ excimer laser (wavelength 126 nm) is also entering the field of practical use. In addition, EUV (Extreme Ult)
ra Violet: Ultra short ultraviolet light (wavelength 0.5n)
m-50 nm) is also considered.

As described above, when the wavelength of an exposure light source is shortened, the transmittance of a material that can be used as a refractive optical element is greatly reduced. For this reason, in an optical system using a light source having a wavelength of 200 nm or less, a catadioptric system using a reflective optical element as a part of the optical system or a reflective optical system in which the entire optical system is configured by a reflective optical element is mainly used. Become. In particular, a wavelength of 130 n
In an optical system using a light source of m or less, only a reflection optical system is possible.

[0004]

As a reflection optical system of an exposure apparatus, various studies have been made on an imaging optical system. Research on the illumination optical system, which can reduce illumination unevenness, has not progressed much, but it reduces illumination unevenness by using a hollow reflective integrator with a reflective film formed on the inner surface as shown in Fig. 7. A way to do that has been proposed.

FIG. 7 is a perspective view of a reflection type integrator 10 having a quadrangular prism in both the outer shape and the hollow shape. Upper inner surface 10
U, lower inner surface 10D, right inner surface 10R, left inner surface 10L
The reflective film made of the multilayer film ML is applied to the four inner surfaces. The light enters from the incident end face 10F and is reflected from the inner face or exits from the emission end face 10B without being reflected. The light rays reflected on the inner surface are radiated while being superimposed on the emission end face 10B, and as a result, the inside of the emission end face 10B is illuminated with high uniformity.

As described above, a multilayer film for promoting reflection is usually formed on the reflection surface of the reflection type optical element. As a method of forming this multilayer film, a vapor deposition method is mainly used, and a CVD (c
chemical Vapor Deposition)
Method or the like can also be used. In a normal film forming apparatus using the vapor deposition method, the thickness of the formed film may be distributed depending on the distance from the vapor deposition source. To avoid this, the film forming surface is rotated with respect to the vapor source. The method was adopted to make the film thickness uniform. However, this method is not suitable for an optical element having a film-forming surface as an inner surface as shown in FIG.

On the other hand, in the CVD method, a substrate is placed in an atmosphere filled with a film-forming source in a gaseous state, and a thin film is formed by a chemical reaction. Therefore, the problem of a distance from an evaporation source can be solved. Further, a multilayer film can be formed by repeatedly performing a film forming operation. However, when a temperature gradient occurs on the inner surface of the element where the film is formed, the chemical reaction is affected by the temperature, and the film formed on the inner surface of the element is not uniform. Therefore, even if the CVD method is used, the conventional film forming apparatus cannot sufficiently control the film thickness, and cannot form a uniform film.

In particular, in the integrator for EUV, unevenness of film thickness in a plane becomes a serious problem, and high-precision control of the film thickness is required. Normally, EUV light is hardly reflected on a glossy surface of a simple metal or glass which is a base material of the reflection surface.
Therefore, a sufficient reflectance could not be obtained unless a special multilayer film for promoting reflection using Bragg reflection satisfying the following equation was applied.

2d × sin θ = nλ where d: film thickness of one multilayer film, θ: incident angle, λ:
It is the wavelength of the incident light.

As can be seen from the above equation, the film thickness at which Bragg reflection occurs differs depending on the incident angle. Therefore, in order to use the Bragg reflection, it is sometimes preferable that the inside of the integrator has a thickness having a distribution instead of a uniform thickness. This will be described with reference to FIG. FIG. 8 is a sectional view of the same integrator as FIG. As shown in FIG. 8A, of the incident light, the light indicated by the broken line is the lower inner surface 1.
It reflected after entering at the incident angle theta _A to position A1 of 0D, reflected after entering at the incident angle theta _A to the position A2 of the upper inner surface 10U reaches the exit end face. Of the incident light beam, light beam indicated by a solid line reaches the reflected emitting end face after entering at the incident angle theta _B to position B1 of the lower inner surface 10D.

Since the incident angle θ _A is different from the incident angle θ _B , if a reflection film is to be formed based on the Bragg reflection formula, as shown in FIG. In the region B shown, the thickness of the multilayer film is different. Further, when the number of reflections on the inner surface is large, a structure in which the thickness of the multilayer film differs for each portion is periodically repeated. The reflective film may use the same type of material on all inner surfaces, or
If the incident angle at each of the points A1 and B1 satisfies the Bragg reflection equation described above, the point A1 and the point B1 may be made of different types of substances.

However, in the conventional apparatus, as described above, a film having a desired film thickness distribution is formed with high precision inside the element, or a different kind of material is formed in different regions on one element inner surface. It was extremely difficult.

The present invention has been made in view of the above problems, and has as its object to provide a film forming apparatus capable of forming a film having a desired film thickness distribution on the inner surface of a member with high accuracy. It is to provide a film forming method. Another object of the present invention is to provide an optical member in which a film having a desired film thickness distribution is formed on an inner surface with high precision and a high reflectance, an illumination optical system for performing illumination using the optical member, and an illumination optical system. An exposure apparatus having the same is provided.

[0014]

In order to solve the above problems, the present invention is directed to a film forming apparatus for forming a film on the inner surface of a hollow member, the film forming device being provided inside the hollow member. A film forming apparatus, comprising: a source; and a film forming means for forming a film at least locally on the inner surface of the hollow member by gasifying the film forming source. By locally forming the film, even if there is a temperature gradient in the entire member, the film can be formed while adjusting locally, and uniformity of the film can be secured. Here, the hollow member refers to a member having an inner surface, and is not limited to a cylindrical shape, but has a hollow inside a polygonal prism, or has a variety of shapes such as one having a not necessarily closed inner wall but having an arc-shaped cross section. Things are conceivable. The film forming source is a substance that becomes a material of the film. The film forming means is a means for forming a film by depositing a film forming source.
Various means can be considered depending on the film forming method.

In this case, it is preferable to further include a moving unit for relatively moving the film forming unit and the hollow member. In this case, the film forming means may be moved while the hollow member is fixedly held, or the hollow member may be moved while the film forming means is fixed and held. By relatively moving the film forming means and the hollow member, it is possible to freely form a film on the entire inner surface of the member or on a desired region on the inner surface even if the film is localized.

Further, it is preferable that the apparatus further comprises a rotating means for relatively rotating the film forming means and the hollow member around a predetermined axis located inside the hollow member. In this case, the film forming means may be rotated while the hollow member is fixed and held, or the hollow member may be rotated while the film forming means is fixed and held. By relatively rotating the film forming means and the hollow member, it is possible to form a uniform film on the inner surface of the member in the circumferential direction of the shaft. In particular, the present invention is effective for a member having a hollow symmetrical body such as a cylindrical shape.

A part of the film forming means may be arranged inside the hollow member, or may be arranged outside the hollow member. The film forming means may be a CVD method and / or a PVD (Physical Vapor Deposit).
(tion) method. Examples of the CVD method include a photo CVD method and a plasma C method.
A VD method, a thermal CVD method, and the like are considered. As the PVD method, for example, a sputtering method, a thermal evaporation method, and the like are considered. Further, these methods may be combined to form a film by a plurality of methods.

According to another aspect of the present invention, there is provided a film forming method for forming a film on an inner surface of a hollow member, wherein a film forming source is disposed inside the hollow member, and the film forming source is air-conditioned. A film forming method is provided, wherein a film is formed using a film forming means for forming a phase and forming a film at least locally on the inner surface of the hollow member.

At this time, it is preferable that the film forming means and the hollow member are relatively moved and a film is formed on the inner surface of the hollow member. It is preferable to rotate relatively around a predetermined axis located inside the hollow member and form a film on the inner surface of the hollow member. Furthermore, a multilayer film can be formed on the inner surface of the hollow member by repeating the above film forming method. The film forming means may be a means for forming a film using a CVD method and / or a PVD method.

In addition to the above-described film forming method, the method preferably includes a step of measuring a film thickness distribution of the formed film, and a step of forming a film while controlling the film thickness based on the measurement result. The film thickness can be accurately and efficiently controlled by referring to the measurement results. Thereby, a film having a uniform film thickness or a desired film thickness distribution can be formed with high precision.

The control may be performed by adjusting the speed of the relative movement, or may be performed by adjusting the speed of the relative rotation. By employing such mechanical control, highly accurate control can be easily performed. Further, the control may be performed by adjusting various conditions of the film forming means. For example, when the film forming means is based on the photo-CVD method, the control is performed by controlling the amount of light to be applied during film formation. Adjustment may be performed, and control is also easy in this case.

According to another aspect of the present invention, there is provided an optical member having a film on an inner surface and manufactured by using the film forming method described above. By adopting the film forming method, it is possible to provide an optical member in which a film having a desired film thickness distribution is formed on the inner surface with high accuracy, and an internal reflection type optical member having a high reflectance.

According to another aspect of the present invention, there is provided an illumination optical system characterized in that illumination is performed using the optical member. By performing illumination using an optical member having a high reflectance, light from a light source can be used effectively. Conventionally, it is difficult to achieve high reflectance at a wavelength of 200 n.
This is particularly effective in an optical system using light of m or less or EUV light as a light source.

According to yet another aspect of the present invention,
An exposure apparatus for projecting an original plate on which a predetermined pattern is formed onto a substrate, comprising: the illumination optical system described above; and a projection optical system. An exposure apparatus is provided which projects an image of the pattern onto the substrate via the projection optical system. As described above, since an optical system using light having a wavelength of 200 nm or less or EUV light as a light source and light from the light source can be used effectively, an extremely fine pattern can be projected on the substrate.

[0025]

Embodiments of the present invention will be described below in detail with reference to the drawings. In the following description and the accompanying drawings, components having the same functions and configurations are denoted by the same reference numerals, and redundant description is omitted. First, a film forming apparatus according to an embodiment of the present invention and a method for forming a film on the inner surface of a hollow member using the apparatus will be described. FIG. 1 shows an optical CV according to the first embodiment of the present invention.
FIG. 3 is a cross-sectional view illustrating a configuration of a film forming apparatus that forms a film using a method D.
The photo-CVD method is a type of the CVD method, in which a source gas is decomposed by irradiation with laser light or the like and deposited on a substrate to form a thin film.

The integrator 100, which is a hollow member, has a cylindrical shape and is firmly held by the chuck 110. The inner diameter of the chuck 110 can be easily changed, and by changing the inner diameter, members having various outer diameters can be gripped or detached. The chuck 110 is connected to a support shaft 112, and the support shaft 112 is held by a hollow holding base 114. The integrator 100, the chuck 110, and the support shaft 112 have the same central shaft 102. The chuck 110 and the support shaft 112 are integrally rotatable about the center axis 102 with respect to the holding table 114. When the chuck 110 rotates, the integrator 100 firmly held by the chuck 110 also rotates around the central axis 102 integrally with the chuck 110. The holding table 114 is fixed to the stage 116.

From the outside of the integrator 100 to the hollow portion of the integrator 100, a source gas inlet pipe 120 for sending a source gas as a film forming source from the outside, and a newly generated source gas and a chemical reaction inside the integrator 100. Gas discharge pipe 1 for discharging the exhausted gas to the outside
22, and a light guide system 124 for guiding a laser beam 123 from a light source (not shown) provided outside to the inside of the integrator 100. Light guide system 1 inside integrator 100
24, the laser beam 123 is applied to the integrator 100.
An image forming optical system 126 for forming an image on the inner surface of the camera is provided. Here, the imaging optical system 126 includes the laser light 12.
It has a mirror 128 for deflecting the laser beam 3 and a lens 130 for condensing the laser beam. In the optical CVD method, the light guide system 124 and the imaging optical system 126 serve as film forming means. These film forming means are not fixed to the stage 116, but are fixed to something outside the stage 116.

The support shaft 112 is configured to interlock with the gear 140. Gear 140 is connected to shaft 144 which is connected to motor 142. The power of the motor is transmitted to the support shaft 112 via the shaft 144 and the gear 140. Accordingly, when the motor 142 rotates, the gear 140 also rotates as shown by the arrow in the figure, and accordingly, the support shaft 112, the chuck 110, and the integrator 100 held by the chuck 110 are integrated around the central shaft 102. Rotate. At this time, even if the integrator 100 rotates, the film forming means inside the integrator 100 is the stage 1
Since it is fixed to an object outside the area 16, it remains stationary.

The stage 116 is configured to work with the gear 146. The gear 146 is operated by a motor (not shown) similarly to the gear 140, and has a function of transmitting the power of the motor to the stage 116. When the gear 146 is rotated by the motor as indicated by an arrow in the drawing, the stage 116 moves in a direction parallel to the central axis 102 of the integrator 100. As the stage 116 moves, the integrator 100 on the stage 116
However, since the film forming means inside the integrator 100 is fixed to something outside the stage 116, it remains stationary. The entire apparatus shown in FIG. 1 is installed in a chamber having an airtight structure, and is isolated from the atmosphere.

Next, a method for forming a film on the inner surface of the integrator 100 by the photo-CVD method using the apparatus shown in FIG. 1 will be described. The atmosphere is exhausted from the chamber, and the temperature and pressure in the chamber are set to conditions suitable for the reaction. With the integrator 100 fixed to the chuck 110, the source gas is supplied from the source gas inlet pipe 120 to the integrator 10.
0 inside. The source gas and the generated gas are appropriately discharged from the gas discharge pipe 122 so that the gas composition and the gas concentration in the integrator 100 are optimized for the reaction.

After the reaction conditions are adjusted as described above, the laser beam 123 is irradiated toward the inner surface of the integrator 100 via the light guide system 124 and the imaging optical system 126. The laser beam 123 condensed by the lens 130 forms a small beam spot and irradiates a minute area. Laser light 1
The irradiation of 23 decomposes the source gas in the atmosphere inside the integrator 100 and locally forms a film on the inner surface of the integrator 100. The region where the film is formed is determined by the beam spot of the laser beam 123 to be irradiated. The shape and size of the beam spot can be adjusted by appropriately selecting a light source and a condenser lens.

When the motor 142 is driven to rotate the integrator 100 around the central axis 102 during light irradiation, the film forming means is fixed to an object outside the stage 116 and remains stationary. Light is irradiated in an annular shape, and a film can be formed in an annular shape. Or,
A motor (not shown) is driven to move the stage 116 to the center axis 102.
When the film is moved in a direction parallel to the direction, the film forming unit is kept stationary, so that the light irradiation unit moves in the direction of the central axis 102 of the integrator 100, and the film can be formed linearly.

When the integrator 100 is moved about the central axis 102 while being rotated about the central axis 102, the light irradiating part draws a spiral trajectory on the inner surface of the integrator 100. In this way,
If the irradiation is performed so as to cover the entire inner surface of the integrator 100, a film can be formed on the entire inner surface of the integrator 100. In addition, if the integrator 100 is moved as described above and only the on / off of the laser beam irradiation is controlled, a film can be formed in a desired region on the inner surface of the integrator 100. In addition, by appropriately setting the rotation speed and the moving speed, a film can be formed to have a desired film thickness in a desired region. Further, a multilayer film can be formed by repeating the above operation using different source gases.

Further, a film having a desired film thickness distribution can be formed with high accuracy by using the method described below.
First, a predetermined film is formed once by the above-described method. next,
The thickness distribution of the formed film is measured. Then, the film is formed while controlling the film thickness to obtain a desired film thickness distribution at the time of the next film formation by using the measurement results as reference data. In the present embodiment, for example, the integrator 1
The film thickness can be controlled by adjusting the speed at which the laser beam 00 is rotated, the speed at which the laser beam 00 is moved in a direction parallel to the central axis 102, and the light intensity of the laser beam 123 to be irradiated. This makes it possible to form a film having a uniform thickness with extremely small thickness unevenness, and to form a film having a desired film thickness distribution with high precision.

As described above, according to this embodiment, a film having a desired film thickness distribution can be formed on the inner surface of the hollow member with high accuracy. Further, it is easy to form a film with different types of substances in different regions on the inner surface as shown in FIG. That is, a special film such as a reflection film utilizing Bragg reflection can be formed in multiple layers. Therefore, an internal reflection type optical member having high reflectance can be provided. In particular, light having a wavelength of 200 nm or less and EU, which have conventionally been difficult to achieve high reflectance,
The use of this member in an optical system using V light as a light source is very effective.

FIG. 2 is a sectional view showing the structure of a film forming apparatus for forming a film by using a plasma CVD method according to a second embodiment of the present invention. Plasma CVD is one type of CVD.
In this method, a source gas is excited into a plasma state and deposited on a substrate to form a thin film. In the present embodiment, only the film forming means is different from that of the first embodiment. Therefore, the film forming means will be described below, and the description of the other same components will be omitted.

In the present embodiment, a high-frequency coil 200 is used as a film forming means instead of the light guide system 124 and the imaging optical system 126 of the first embodiment. High frequency coil 20
Numeral 0 has such a size as to cover a very small part of the outer periphery of the integrator 100 and is installed on the outer periphery of the integrator 100. The central axis 102 of the high-frequency coil 200 is coaxial with the integrator 100. Both ends of the high-frequency coil 200 are connected to a high-frequency power supply (not shown). The high-frequency coil is not fixed to the stage 116 but is fixed to something outside the stage 116. The entire apparatus shown in FIG. 2 is installed in a chamber having an airtight structure, and is isolated from the atmosphere.

Next, a method for forming a film on the inner surface of the integrator 100 by the plasma CVD method using the apparatus shown in FIG. 2 will be described. As with the film forming method according to the first embodiment, the temperature and pressure in the chamber, the integrator 1
The gas composition and gas concentration in 00 are set to conditions suitable for the reaction. Next, after the reaction conditions are set, the high-frequency coil 200
When a high-frequency power is applied to the raw material, the source gas inside the integrator 100 is turned into plasma, and a film is formed in the integrator 100 in an annular shape. Since the plasma is generated only in the area covered by the high-frequency coil 200 and in the vicinity thereof, a ring-shaped film can be locally formed on the inner surface of the integrator 100.

When a motor (not shown) is driven to move the stage 116 in a direction parallel to the central axis 102 when high-frequency power is applied, the high-frequency coil 200 remains stationary. The formation region is moved, and a film can be formed sequentially in the direction of the central axis 102. If the integrator 100 is sequentially moved from one end to the other end of the integrator 100 so as to be covered with the high-frequency coil 200, a film can be formed on the entire inner surface of the integrator 100. Drives the motor 142,
When the integrator 100 is rotated around the central axis 102, the film formation region does not change, but the film can be formed more uniformly in the annular region where plasma is generated.

When the integrator 100 is moved as described above and only the on / off of the application of the high-frequency power is controlled, a film can be formed in a desired annular zone region on the inner surface of the integrator 100. By setting the moving speed appropriately, a film can be formed to have a desired film thickness in a desired annular zone region. Furthermore, using different source gases,
Different types of films can be formed in different annular zones on the inner surface of the integrator 100. Further, a multilayer film can be formed by repeating the above operation.

In this embodiment, as in the first embodiment, the film thickness distribution of a film formed once is measured, and the measurement result is used as reference data to control the next film formation. Is performed, a film having a desired film thickness distribution can be formed with high accuracy. In the present embodiment, for example, the speed at which the integrator 100 is rotated, the center axis 1
The film thickness can be controlled by adjusting the moving speed in the direction parallel to the direction 02 and the applied power. This gives
It is possible to form a film having a uniform thickness with extremely small thickness unevenness, and to form a film having a desired film thickness distribution with high precision.

As described above, according to the present embodiment, a film having a desired film thickness distribution can be formed on the inner surface of the hollow member with high precision. In addition, it is easy to form a film with different types of substances on different annular zones on the inner surface. That is, a special film such as a reflection film utilizing Bragg reflection can be formed in multiple layers. Therefore, an internal reflection type optical member having high reflectance can be provided. In particular, if this member is used in an optical system using light having a wavelength of 200 nm or less or EUV light as a light source, it has been very difficult to achieve a high reflectivity in the related art.

FIG. 3 is a sectional view showing the structure of a film forming apparatus for forming a film by using a thermal CVD method according to a third embodiment of the present invention. The thermal CVD method is a type of the CVD method, in which a source gas is decomposed at a high temperature and deposited on a substrate to form a thin film. In the present embodiment, only the film forming means is different from that of the second embodiment. Therefore, the film forming means will be described below, and the description of the same components will be omitted.

In the present embodiment, a heating coil 300 is used as a film forming means instead of the high-frequency coil 200 of the second embodiment. The heating coil 300 has such a size that it covers only a part of the outer periphery of the integrator 100,
It is installed on the outer periphery of the integrator 100 and its central axis 1
02 is coaxial with the integrator 100. Both ends of the heating coil 300 are connected to a power supply (not shown). When power is applied, the heating coil 300 generates heat and locally raises the temperature of the integrator 100. The heating coil 300 is not fixed to the stage 116 but is fixed to something outside the stage 116. The entire apparatus shown in FIG. 3 is installed in a chamber having an airtight structure, and is isolated from the atmosphere.

Next, a method for forming a film on the inner surface of the integrator 100 by the thermal CVD method using the apparatus shown in FIG. 3 will be described. As in the case of the first embodiment, the temperature and pressure in the chamber, the gas composition in the integrator 100,
The gas concentration is set to a condition suitable for the reaction. Next, when power is applied to the heating coil 300 after the reaction conditions are adjusted, the temperature of the portion of the integrator 100 covered with the heating coil 300 becomes high, and a film is formed in an inward shape on the inner surface of the integrator 100. In this way, a ring-shaped film can be locally formed on the inner surface of the integrator 100.

When a motor (not shown) is driven to move the stage 116 in a direction parallel to the central axis 102 when power is applied, the heating coil 300 remains stationary. The region moves, and a film can be formed sequentially in the direction of the central axis 102.
If the integrator 100 is moved from one end to the other end of the integrator 100 so as to be sequentially covered with the heating coil 300, a film can be formed on the entire inner surface of the integrator 100. Further, if the motor 142 is driven to rotate the integrator 100 around the central axis 102, the film formation region does not change, but the film can be formed more uniformly in the annular zone where the temperature becomes high.

Further, by moving the integrator 100 as described above and controlling only the on / off of the power application to the heating coil 300, a film can be formed in a desired annular zone region on the inner surface of the integrator 100. By setting the moving speed appropriately, a film can be formed to have a desired film thickness in a desired annular zone region. Furthermore, different types of films can be formed in different annular zones on the inner surface of one integrator 100 using different source gases. Further, a multilayer film can be formed by repeating the above operation.

In this embodiment, as in the first embodiment, the film thickness distribution of a film formed once is measured, and the measurement result is used as reference data to control the next film formation. Is performed, a film having a desired film thickness distribution can be formed with high accuracy. In the present embodiment, for example, the speed at which the integrator 100 is rotated, the center axis 1
The film thickness can be controlled by adjusting the moving speed in the direction parallel to the direction 02 and the applied power. This gives
It is possible to form a film having a uniform thickness with extremely small thickness unevenness, and to form a film having a desired film thickness distribution with high precision. As described above, according to the present embodiment, the same effects as those of the second embodiment can be obtained.

FIG. 4 is a sectional view showing the structure of a film forming apparatus for forming a film by using the sputtering method according to the fourth embodiment of the present invention. The sputtering method is a kind of PVD method,
In this method, ions are bombarded with a thin film raw material, and particles emitted from the raw material are deposited on a substrate to form a thin film. Comparing this embodiment with the first embodiment, in this embodiment, the film forming means is different, and the source gas inlet pipe 120 and the gas discharge pipe 122 are not provided. Hereinafter, these points will be described, and the description of other identical components will be omitted.

In this embodiment, the integrator 100
An ion gun 400 as a film forming means is provided inside, and a thin film material 40 serving as a film material is provided in a direction in which ions are irradiated.
2 is provided. A slit is provided on one of the wall surfaces of the raw material chamber 404 facing the inner surface of the integrator. The ion irradiated from the ion gun 400 collides with the thin film raw material 402, and the particles that fly out at that time fly out of the slit toward the inner surface of the integrator. The ion gun 400 and the raw material chamber 404 are not fixed to the stage 116, but are fixed to something outside the stage 116. The entire apparatus shown in FIG. 4 is installed in a chamber having an airtight structure, and is isolated from the atmosphere.

Next, a method for forming a film on the inner surface of the integrator 100 by the sputtering method using the apparatus shown in FIG. 4 will be described. As in the case of the first embodiment, the temperature and pressure in the chamber and the atmosphere in the integrator 100 are set to conditions suitable for the reaction. Next, after the reaction conditions are set, the thin film raw material 402 is irradiated with ions from the ion gun 400. The ions collide with the thin film material 402,
Particles released from the thin film raw material 402 fly out. The particles fly out of the slit toward the inner surface of the integrator 100. Thus, a film can be locally formed on the inner surface of the integrator 100. The area where the film is formed
It can be adjusted by appropriately selecting the shape and size of the slit.

At the time of ion irradiation, the motor 142 is driven,
When the integrator 100 is rotated around the central axis 102, the film forming means is fixed to an object outside the stage 116 and remains stationary, so that the inner surface of the integrator 100 is irradiated with particles in an annular shape to form an annular film. it can. Alternatively, a motor (not shown) is driven to move the stage 116 to the center axis 1.
When the film is moved in a direction parallel to the direction 02, the film forming means remains stationary.
The ion irradiation part moves in the direction, and a film can be formed linearly.

When the integrator 100 is moved in the direction parallel to the central axis 102 while rotating about the central axis 102, the ion irradiation section draws a spiral trajectory on the inner surface of the integrator 100. If the irradiation is performed so as to cover the entire inner surface of the integrator 100 in this manner, a film can be formed on the entire inner surface of the integrator 100. Further, if only the on / off of the ion irradiation is controlled by moving the integrator 100 as described above, a film can be formed in a desired region on the inner surface of the integrator. In addition, by appropriately setting the rotation speed and the moving speed, a film can be formed to have a desired film thickness in a desired region. Furthermore, a multilayer film can be formed by repeating the above operation using different thin film materials.

In this embodiment, as in the first embodiment, the film thickness distribution of a film formed once is measured, and the measurement result is used as reference data to control the next film formation. Is performed, a film having a desired film thickness distribution can be formed with high accuracy. In this embodiment, for example, the speed at which the integrator 100 is
The film thickness can be controlled by adjusting the moving speed in the direction parallel to the direction and the ion irradiation amount. This gives
It is possible to form a film having a uniform thickness with extremely small thickness unevenness, and to form a film having a desired film thickness distribution with high precision. As described above, according to the present embodiment, effects similar to those of the first embodiment can be obtained.

FIG. 5 is a sectional view showing the structure of a film forming apparatus for forming a film by using a thermal evaporation method according to a fifth embodiment of the present invention. The thermal evaporation method is a kind of PVD method, and is a method of forming a thin film by evaporating a thin film material by heating and depositing the thin film material on a substrate. Comparing this embodiment with the first embodiment,
In the present embodiment, the film forming means is different, and there is no source gas supply pipe 120 and no gas discharge pipe 122. Hereinafter, these points will be described, and the description of other identical components will be omitted.

In this embodiment, the integrator 100
A raw material chamber 500 is provided inside. A heating unit 502 as a film forming means is provided in the raw material chamber 500.
The thin film raw material 504 is provided in contact with the upper surface of the heating unit 502. The heating unit 502 is connected to a power source (not shown), and generates heat by application of the power source, and
4 is configured to be heated. Raw material chamber 50
A nozzle 506 having a small hole at the tip is connected to an upper portion of the nozzle 0. Nozzle unit 506 in the present embodiment
Has a shape that tapers from the raw material chamber 500 toward the inner surface of the integrator 100. The raw material chamber 500 is not fixed to the stage 116, but is fixed to something outside the stage 116. The entire apparatus shown in FIG. 5 is installed in a chamber having an airtight structure, and is isolated from the atmosphere.

Next, a method for forming a film on the inner surface of the integrator 100 by the thermal evaporation method using the apparatus shown in FIG. 5 will be described. As in the case of the first embodiment, the temperature and pressure in the chamber and the atmosphere in the integrator 100 are set to conditions suitable for the reaction. Next, after the reaction conditions are set,
The heating unit 502 is heated to a high temperature by applying electric power,
4 is heated and evaporated. The evaporated thin-film raw material 504 is emitted from the hole at the tip of the nozzle 506 toward the inner surface of the integrator 100. Thus, a film can be locally formed on the inner surface of the integrator 100. The area where the film is formed can be adjusted by appropriately selecting the shape and size of the hole at the tip of the nozzle portion 506.

When the thin film material 504 is emitted from the nozzle section 506, the motor 142 is driven and the integrator 10 is driven.
When 0 is rotated around the central axis 102, the film forming means is fixed to the one outside the stage 116 and remains stationary, so that the film can be formed in an annular shape on the inner surface of the integrator 100. Alternatively, a motor (not shown) is driven to
Is moved in a direction parallel to the central axis 102, the film forming means remains stationary, so that a film can be formed linearly in the direction of the central axis 102 of the integrator 100.

When the integrator 100 is moved in a direction parallel to the central axis 102 while rotating about the central axis 102, the emission part of the thin film material draws a spiral trajectory on the inner surface of the integrator 100. In this manner, when the thin film material is emitted so as to cover the entire inner surface of the integrator 100, a film can be formed on the entire inner surface of the integrator 100. Integrator 1
By moving 00 as described above and controlling only the on / off of the power application, a film can be formed in a desired region on the inner surface of the integrator 100. In addition, by appropriately setting the rotation speed and the moving speed, a film can be formed to have a desired film thickness in a desired region. Furthermore, a multilayer film can be formed by repeating the above operation using different thin film materials.

In this embodiment, as in the first embodiment, the film thickness distribution of a film formed once is measured, and the measurement result is used as reference data to control the next film formation. Is performed, a film having a desired film thickness distribution can be formed with high accuracy. In the present embodiment, for example, the speed at which the integrator 100 is rotated, the center axis 1
The film thickness can be controlled by adjusting the moving speed in the direction parallel to 02 and the temperature of the heating unit. This makes it possible to form a film having a uniform thickness with extremely small thickness unevenness, and to form a film having a desired film thickness distribution with high precision. As described above, according to the present embodiment, effects similar to those of the first embodiment can be obtained.

As the multilayer film in the above embodiment, for example, Mo (molybdenum) / Si (silicon), W (tungsten) / Si, Cr (chromium) / C (carbon), Ni
(Nickel) / C, NiCr (nickel / chrome) / C
And the like.

FIG. 6 shows an exposure apparatus that performs illumination using the integrator manufactured by the above-described method. The exposure apparatus is roughly divided into a laser plasma X-ray apparatus LP, an illumination optical system IL, and a projection optical system TL. These are filled at least in a vacuum state or with a gas (such as helium) that absorbs little at the used wavelength.

The laser plasma X-ray apparatus LP mainly comprises a laser light source LS, a gas emitter GS, and an elliptical mirror M1. The light emitted from the laser light source LS is condensed near the first focal point of the elliptical mirror M1 by condensing means such as a lens. The Xe gas or the Kr gas is emitted toward the converging point using the gas ejector GS. Plasma X-rays are emitted by irradiating the Xe gas or the Kr gas with laser light. Elliptical mirror M1
Enters the first focal point, the light emitted from the laser light source LS is reflected by the elliptical mirror M1 and then condensed on the focal point CP near the second focal point of the elliptical mirror M1.

The illumination optical system IL includes an integrator 100
And an imaging system composed of a concave mirror M2 and a convex mirror M3. The integrator 100 has its incident end face 100
F is arranged so as to be located near the converging point CP, and the light reflected and passed through the inner wall surface of the integrator 100 is emitted from the emission end face 100B. The concave mirror M2 and the convex mirror M3 are connected to the exit end face 100 of the integrator 100.
It is arranged so that an image of B is formed on a mask R which is an irradiated surface.

Output end face 100B of integrator 100
Is emitted from the concave mirror M2 and is reflected by the convex mirror M3.
, And further reflected by the concave mirror M2 to illuminate the reflective mask R arranged obliquely with respect to the optical axis. Here, the light is reflected twice by the concave mirror M2, but the concave mirror M2 may be separated into two reflecting mirrors. A circuit pattern is formed on the surface of the mask R. By the concave mirror M2 and the convex mirror M3, the mask R surface and the emission end face 100B are in a conjugate relationship. Therefore, if the exit end face 100B is uniformly illuminated within the plane, the mask R surface is also uniformly illuminated.

The light reflected by the mask R is reflected by the projection optical system TL
Incident on. The projection optical system TL includes a concave mirror M4 and a convex mirror M5. The light incident on the projection optical system TL is reflected by the concave mirror M4, reflected by the convex mirror M5, further reflected by the concave mirror M4, and forms an image of the circuit pattern of the mask R on the resist-coated wafer W. Here, the light is reflected twice by the concave mirror M4, but the concave mirror M4 may be separated into two reflecting mirrors. Since the irradiated surface of the mask R is narrower than the circuit pattern area of the mask R, the mask R and the wafer W are synchronously scanned to expose the entire circuit pattern as shown by arrows in FIG.

If the integrator 100 has a high reflectance, the mask R can be efficiently illuminated.
If EUV light is used as a light source and an EUV optical system including the integrator 100 is employed, a fine circuit pattern can be formed on the wafer.

Although the preferred embodiments of the present invention have been described with reference to the accompanying drawings, it is needless to say that the present invention is not limited to such examples. It is clear that a person skilled in the art can conceive various changes or modifications within the scope of the technical idea described in the claims, and it is obvious that the technical scope of the present invention is not limited thereto. It is understood that it belongs to.

For example, the configuration in which the integrator rotates and moves has been described as an example, but the integrator may be fixed and the film forming means may rotate and move. Also,
In the above embodiment, a cylindrical integrator has been described as an example. However, the present invention is not limited to this, and is effective when forming a film on the inner surface of a hollow member having various shapes. Also in the film forming apparatus, various modifications are possible without being limited to the above example. For example, the number of source gas inlet pipes for transporting the source gas and the number of gas exhaust pipes in the CVD method are not limited to one, but may be plural. In the sputtering method, irradiation is not limited to ions, but may be electrons.
The shape of the nozzle portion used in the thermal evaporation method is not limited to the above embodiment, and various types and shapes of nozzles can be used according to various conditions. Various configurations other than the above can be considered for the illumination optical system and the exposure apparatus.

[0070]

As described above in detail, according to the present invention, a film having a desired film thickness distribution can be formed on the inner surface of a hollow member with high precision, and different types of films can be formed on different regions of the inner surface. It is possible to provide a film forming apparatus and a film forming method that can easily form a film with a substance and can form a special film such as a reflective film using Bragg reflection over a plurality of layers. Further, an internal reflection type optical member having a high reflectance can be provided. In particular, if this member is used in an optical system using light having a wavelength of 200 nm or less or EUV light as a light source, it has been very difficult to achieve a high reflectivity in the related art.

According to another aspect of the present invention, it is possible to provide an illumination optical system in which illumination is performed using an optical member having a high reflectance and light from a light source can be effectively used. Further, according to the exposure apparatus of the present invention, since the illumination optical system is included, the EU
Exposure can be performed using V light, and there is an advantage that a fine pattern can be projected.

[Brief description of the drawings]

FIG. 1 is a configuration sectional view of a film forming apparatus according to a first embodiment of the present invention.

FIG. 2 is a configuration sectional view of a film forming apparatus according to a second embodiment of the present invention.

FIG. 3 is a configuration sectional view of a film forming apparatus according to a third embodiment of the present invention.

FIG. 4 is a configuration sectional view of a film forming apparatus according to a fourth embodiment of the present invention.

FIG. 5 is a configuration sectional view of a film forming apparatus according to a fifth embodiment of the present invention.

FIG. 6 is a configuration diagram of an exposure apparatus according to an embodiment of the present invention.

FIG. 7 is a perspective view of an integrator.

FIG. 8 is a diagram illustrating the relationship between the incident angle of light rays and the film thickness in the integrator.

[Explanation of symbols]

 10, 100 Integrator 102 Center shaft 110 Chuck 112 Support shaft 114 Holder 116 Stage 120 Source gas supply pipe 122 Gas discharge pipe 123 Laser light 124 Light guide system 126 Imaging optical system 140 Gear 142 Motor 144 Shaft 146 Gear GS Gas release Instrument IL Illumination optical system LP Laser plasma X-ray device LS Laser light source M1 Elliptic mirror M2, M4 Concave mirror M3, M5 Convex mirror R Mask TL Projection optical system W Wafer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G02B 5/08 G02B 5/26 4K030 5/26 5/28 5F046 5/28 19/00 19/00 19/03 G03F 7 / 20 521 G03F 7/20 521 G02B 1/10 Z H01L 21/027 H01L 21/30 515D F-term (reference) 2H042 BA01 BA09 BA11 BA15 BA16 DA01 DA03 DB02 DC02 DC03 DD04 DE04 DE07 2H048 FA05 FA07 FA09 FA18 FA24 GA01 GA04 GA18 GA30 GA60 GA61 2H052 BA03 BA09 BA12 2K009 CC02 CC14 DD01 DD03 DD04 DD09 EE00 4K029 AA27 BB02 BB03 BC07 BD09 EA00 EA01 JA02 4K030 BB12 BB14 CA15 FA01 FA06 GA06 HA14 JA01 JA12 LA18 5F046 BA04 CB13 CB23

Claims (18)

[Claims] 1. A film forming apparatus for forming a film on the inner surface of a hollow member, comprising: a film forming source that can be disposed inside the hollow member; A film forming means for forming a film on at least a local portion of the inner surface. 2. The film forming apparatus according to claim 1, further comprising a moving unit that relatively moves the film forming unit and the hollow member. 3. The apparatus according to claim 1, further comprising rotating means for relatively rotating the film forming means and the hollow member around a predetermined axis located inside the hollow member.
Or the film forming apparatus according to 2. 4. The film forming apparatus according to claim 1, wherein a part of the film forming unit is disposed inside the hollow member. 5. The film forming apparatus according to claim 1, wherein a part of the film forming unit is disposed outside the hollow member. 6. The film forming apparatus according to claim 1, wherein said film forming means is a means for forming a film using a CVD method and / or a PVD method. 7. A film forming method for forming a film on an inner surface of a hollow member, wherein a film forming source is disposed inside the hollow member.
A film forming method, wherein a film is formed by using a film forming means for converting the film forming source into a gas phase and forming a film at least locally on the inner surface of the hollow member. 8. The film forming method according to claim 7, wherein the film forming means and the hollow member are relatively moved and a film is formed on an inner surface of the hollow member. 9. The method according to claim 1, wherein the film forming means and the hollow member are relatively rotated about a predetermined axis located inside the hollow member, and a film is formed on an inner surface of the hollow member. Item 7. The film forming method according to item 7 or 8. 10. A film forming method, wherein a multilayer film is formed on an inner surface of the hollow member by repeating the film forming method according to any one of claims 7 to 9. 11. The film forming apparatus according to claim 7, wherein said film forming means is a means for forming a film by using a CVD method and / or a PVD method. 12. The method according to claim 9, further comprising the steps of: measuring a film thickness distribution of the formed film; and forming a film while controlling the film thickness based on the measurement result.
12. The film forming method according to claim 1. 13. The method according to claim 1, wherein the control is performed by adjusting a speed of the relative movement.
3. The film forming method according to 2. 14. The method according to claim 1, wherein the control is performed by adjusting a speed of the relative rotation.
3. The film forming method according to 2. 15. The method according to claim 1, wherein the control is performed by adjusting various conditions of the film forming unit.
3. The film forming method according to 2. 16. An optical member having a film on an inner surface and manufactured by using the film forming method according to claim 7. Description: 17. An illumination optical system for performing illumination using the optical member according to claim 16. 18. An exposure apparatus for projecting an original plate on which a predetermined pattern is formed on a substrate, comprising: an illumination optical system according to claim 17, and a projection optical system. An exposure apparatus for projecting an image of the pattern onto the substrate via the projection optical system under the exposure light.