JP2002177841A - Substrate treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of preventing the liquid dripping to a substrate when the introduction of a treatment liquid into a nozzle means is stopped. SOLUTION: The substrate treatment apparatus 1 is equipped with a support means 2 for supporting the substrate W, the nozzle means 3 arranged above the substrate W supported by the support means 2 to discharge the treatment liquid to the substrate W and a moving means 5 for relatively moving the nozzle means 3 with respect to the substrate W supported by the support means 2. In this substrate treatment apparatus 1, the nozzle means 3 is equipped with a liquid sump chamber 29 into which the treatment liquid is introduced, the liquid discharge flow channel 30 opened in opposed relation to the substrate W supported by the support means 2 and extended from the opening end thereof up to a position higher than the liquid sump chamber 29 and the liquid flow channel 31 for communicating the upper end of the liquid sump chamber 29 and the upper end of the liquid discharge flow channel 30.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a liquid crystal glass substrate,
The present invention relates to a substrate processing apparatus that discharges and applies a processing liquid such as a chemical solution or a cleaning liquid to a substrate such as a semiconductor wafer (silicon wafer), a glass substrate for a photomask, and a substrate for an optical disk.

[0002]

2. Description of the Related Art For example, a TFT substrate constituting a liquid crystal substrate is manufactured through various processes. In each step, various processing liquids are applied to the TFT substrate, such as application of a resist film or a developer, application of a chemical for removing the resist, or application of a cleaning liquid. The processing liquid for such a TFT substrate is implemented by a substrate processing apparatus. This substrate processing apparatus includes, for example, support means for horizontally supporting a substrate, nozzle means for discharging a processing liquid onto a horizontally supported substrate, and moving means for moving (scanning) the nozzle means above the substrate. It is configured with. 9 and FIG.
0 is used.

In FIG. 9, a nozzle means 101 is provided with a TF
A long nozzle body 102 facing above the T substrate W is provided. The nozzle body 102 extends in the width direction H of the TFT substrate W. The nozzle body 102 has a port 10 connected to a processing liquid supply source 107 through a pipe 111.
6 are formed. The port 106 is provided at the center of the substrate W in the width direction H and opens at the upper end of the nozzle body 102.

FIG. 10 shows the inside of the nozzle body 102.
As shown in FIG.
8 and a throttle groove 109 for discharging the processing liquid are formed. The manifold 108 communicates with the port 106 and extends in the width direction H of the TFT substrate W. The aperture groove 109 is provided on the TFT substrate W side of the manifold 108 and is opened facing the TFT substrate W.
The aperture groove 109 communicates with the manifold 108 and extends in the width direction H of the substrate W. Note that both ends of the manifold 108 and both ends of the throttle groove 109 are
Closing plates 11 fixed to both ends of nozzle body 102
2 closed.

[0005] The nozzle means 101 includes a nozzle body 1
02 is connected to the moving means of the substrate processing apparatus by the supporting member 110 or the like.
Are moved (scanned) orthogonal to.

[0006] The application of the processing liquid by the substrate processing apparatus is performed by using TF
While the T substrate is horizontally supported by the support means, FIGS.
As shown at 0, the processing liquid pressurized from the processing liquid supply source 107 is supplied to the nozzle means 101. And moving means 5
To start (scan) the nozzle means 101. The processing liquid from the processing supply source 107 is introduced into the manifold 108 from the port 106 and is flowed by the manifold 108 so as to be dispersed in the width direction H of the TFT substrate W. Next, the processing liquid is supplied to the throttle groove 109 by the pressure of the processing liquid introduced into the manifold 108 or the like.
Is discharged in the form of a curtain from the entire area. At the same time, the nozzle means 101 is moved (scanned) orthogonally to the width direction H of the TFT substrate W, and the entire area of the TFT substrate W is treated with the curtain-like processing liquid discharged from the aperture groove 109.
Is applied.

[0007]

In a conventional substrate processing apparatus, as shown in FIG.
The port 106, the manifold 108, and the aperture groove 109 are formed in this order on the FT substrate W side. Therefore, when the application of the processing liquid is completed, the processing liquid flows into the manifold 108 from the pipe 111 even when the movement (scanning) of the nozzle unit 101 is stopped and the supply of the processing liquid from the processing liquid supply source 107 is stopped. That is, the processing liquid R drips onto the TFT substrate W from the throttle groove 109 due to the pressure of the processing liquid. This dripping causes unevenness in the processing liquid R applied to the TFT substrate W, and has an adverse effect in a later step.

In order to apply a uniform processing liquid to the TFT substrate W, it is necessary to introduce a large amount of processing liquid into the manifold 108 so that the curtain-shaped processing liquid discharged from the entire area of the throttle groove 109 has no break. There is. As described above, the use of a large amount of the processing liquid causes an increase in manufacturing cost for applying the processing liquid.

Further, the processing liquid is introduced into the manifold 108 through the port 106 at the center of the nozzle means 101, flows through the manifold 108 so as to be dispersed in the width direction H of the TFT substrate W, and flows from the entire area of the throttle groove 109. Since the liquid is discharged, the pressure and the like of the processing liquid discharged from the throttle groove 109 become non-uniform. That is, in the throttle groove 109 located at the center of the width direction H of the TFT substrate W, a high pressure and a large amount of processing liquid are discharged, and the throttle grooves 109 positioned at both ends in the width direction H are formed.
Then, a low pressure and a small amount of the processing liquid are discharged. Therefore, the thickness of the processing liquid applied to the TFT substrate W becomes non-uniform, which has an adverse effect in a later step.

An object of the present invention is to provide a substrate processing apparatus capable of preventing liquid dripping on a substrate when the introduction of the processing liquid into the nozzle means is stopped.

It is another object of the present invention to provide a substrate processing apparatus capable of applying a uniform processing liquid on a substrate with a small amount of a processing liquid.

[0012]

The substrate processing apparatus according to the first aspect of the present invention is provided with support means for supporting a substrate, and disposed above the substrate supported by the support means, and provided on the substrate. Nozzle means for discharging the processing liquid, and moving means for relatively moving the nozzle means with respect to the substrate supported by the supporting means. And in this substrate processing apparatus, the nozzle means is opened facing the liquid storage chamber into which the processing liquid is introduced, and on the substrate supported by the support means,
A liquid discharge flow path extending from the opening end to a position higher than the liquid storage chamber; and a liquid flow path communicating the upper end of the liquid storage chamber and the upper end of the liquid discharge flow path. .

In the substrate processing apparatus according to the first aspect,
The substrate is supported by the support means, and the processing liquid is introduced into the liquid storage chamber of the nozzle means and supplied from the liquid flow path to the liquid discharge flow path. At the same time, the nozzle means is moved (scanned) above the substrate by the moving means. Thereby, the processing liquid discharged from the liquid discharge flow path is applied over the entire area on the substrate. And when the treatment liquid is applied to the whole area on the substrate,
The movement (scanning) of the nozzle means by the moving means is stopped, and the introduction of the processing liquid into the liquid storage chamber of the nozzle means is stopped. At this time, even if the introduction of the processing liquid is stopped, a certain amount of the processing liquid flows into the liquid storage chamber, and the processing liquid in the liquid storage chamber attempts to flow into the liquid discharge flow path through the liquid flow path. However, when the processing liquid flows into the liquid discharge flow path, the liquid discharge flow path is extended with a step higher than the liquid storage chamber, and the liquid storage chamber and the liquid discharge flow path are communicated between the steps by the liquid flow path. To be prevented. Also, the flow of the processing liquid into the liquid discharge flow path is prevented by the surface tension of the processing liquid remaining in the liquid flow path. Further, the processing liquid remaining in the liquid discharge flow path is supported and retained by the surface tension of the processing liquid on the liquid discharge flow path opening side.

As described above, according to the substrate processing apparatus of the first aspect, even if a certain amount of the processing liquid flows into the liquid storage chamber after the introduction of the processing liquid into the liquid storage chamber of the nozzle means is stopped, Since it is possible to prevent the processing liquid from flowing into the discharge flow path, it is possible to prevent the processing liquid from dripping onto the substrate from the liquid discharge flow path. As a result, it is possible to guarantee the quality of the substrate in a subsequent process without causing unevenness in the processing liquid applied on the substrate.

According to a second aspect of the present invention, there is provided a substrate processing apparatus as set forth in the first aspect, wherein a liquid discharge flow path is opened facing the substrate supported by the support means, Each of the discharge holes extends from the opening end to a position higher than the liquid storage chamber, and the upper end of the liquid storage chamber and the upper end of each discharge hole are formed. Through a liquid flow path.

In the substrate processing apparatus according to the second aspect,
The substrate is supported by the support means, and the processing liquid is introduced into the liquid storage chamber of the nozzle means, and is supplied to each discharge hole from the liquid flow path. At the same time, the nozzle means is moved (scanned) above the substrate by the moving means. Thus, the processing liquid discharged from each discharge hole is applied over the entire area on the substrate. In the application of the processing liquid, the processing liquid is discharged onto the substrate from each of the discharge holes aligned in the width direction of the substrate, and extends on the substrate at right angles to the width direction and is aligned in the width direction. A plurality of strip-like treatment liquids are applied. The strip-shaped processing liquids adjacent on the substrate become processing liquids having a uniform thickness due to the mutual surface tension. Further, when each discharge hole is aligned in the width direction of the substrate, the processing liquid is introduced into each discharge hole from the liquid flow path at substantially the same pressure, and is discharged in a small and uniform state from each discharge hole onto the substrate. . When the processing liquid is applied to the entire area on the substrate, the movement (scanning) of the nozzle means by the moving means is stopped, and the introduction of the processing liquid into the liquid storage chamber of the nozzle means is stopped. At this time, even if the introduction of the processing liquid is stopped, a certain amount of the processing liquid flows into the liquid storage chamber, and the processing liquid in the liquid storage chamber attempts to flow into each discharge hole through the liquid flow path. However, the flow of the processing liquid into each discharge hole is based on a configuration in which each discharge hole extends with a step higher than the liquid storage chamber, and the liquid storage chamber and each discharge hole communicate with each other through the liquid flow path between the steps. Will be blocked. Also, the flow of the processing liquid into the liquid discharge flow path is prevented by the surface tension of the processing liquid remaining in the liquid flow path. Further, the processing liquid remaining in each discharge hole is supported and retained by the surface tension of the processing liquid on the opening side of each discharge hole.

Thus, according to the substrate processing apparatus of the second aspect, similarly to the first aspect, after the introduction of the processing liquid into the liquid storage chamber is stopped, the processing liquid is prevented from dripping on the substrate. Can be prevented. According to the substrate processing apparatus of the second aspect,
Since a small amount of uniform processing liquid can be discharged from the discharge holes onto the substrate, the processing liquid to be applied to the entire area on the substrate can be formed in a small amount and uniform thickness, reducing the manufacturing cost for applying the processing liquid. It is possible to do.

According to a third aspect of the present invention, there is provided a substrate processing apparatus as set forth in the first aspect, wherein a liquid discharge flow path is opened facing the substrate supported by the support means, A plurality of discharge holes arranged in the width direction of the liquid supply chamber, and a liquid supply chamber communicated with each discharge hole and extending from each discharge hole to a position higher than the liquid storage chamber. And the upper part of the liquid supply chamber is communicated by a liquid flow path.

In the substrate processing apparatus according to the third aspect,
The substrate is supported by the support means, and the processing liquid is introduced into the liquid storage chamber of the nozzle means, and is supplied from the liquid flow path and the liquid supply chamber to each discharge hole. At the same time, the nozzle means is moved (scanned) above the substrate by the moving means. This allows
The processing liquid discharged from each discharge hole is applied over the entire area on the substrate. In the application of the processing liquid, the processing liquid
Each of the discharge holes aligned in the width direction of the substrate is discharged onto the substrate, and a plurality of strip-like processing liquids extending orthogonally to the width direction and aligned in the width direction are applied onto the substrate. The strip-shaped processing liquids adjacent on the substrate become processing liquids having a uniform thickness due to the mutual surface tension. Further, when each discharge hole is aligned in the width direction of the substrate, the processing liquid is introduced into each discharge hole from the liquid flow path at substantially the same pressure, and is discharged in a small and uniform state from each discharge hole onto the substrate. . Then, when the processing liquid is applied to the entire area on the substrate, the moving means moves (scans) the nozzle means.
And stopping the introduction of the processing liquid into the liquid storage chamber of the nozzle means. At this time, even if the introduction of the processing liquid is stopped, some processing liquid flows into the liquid storage chamber, and the processing liquid in the liquid storage chamber tries to flow into the liquid supply chamber through the liquid flow path. However, the flow of the processing liquid into the liquid supply chamber is performed by extending the liquid supply chamber with a step higher than the liquid storage chamber, and connecting the liquid storage chamber and the liquid supply chamber through the liquid flow path between the steps. Will be blocked. Also, the flow of the processing liquid into the liquid supply chamber is prevented by the surface tension of the processing liquid remaining in the liquid flow path. Further, the processing liquid remaining in the liquid supply chamber and in each of the discharge holes is supported and retained by the surface tension of the processing liquid on the opening side of each of the discharge holes.

Thus, according to the substrate processing apparatus of the third aspect, similarly to the first aspect, after the introduction of the processing liquid into the liquid storage chamber is stopped, the processing liquid is prevented from dripping on the substrate. Can be prevented. According to the substrate processing apparatus of the second aspect,
Since a small amount of uniform processing liquid can be discharged from the discharge holes onto the substrate, the processing liquid to be applied to the entire area on the substrate can be formed in a small amount and uniform thickness, reducing the manufacturing cost for applying the processing liquid. It is possible to do.

According to a fourth aspect of the present invention, there is provided the substrate processing apparatus according to the first or second aspect, wherein the height in the liquid flow path is adjustable.

In the substrate processing apparatus according to the fourth aspect,
By adjusting the height dimension in the liquid flow path, the surface tension of the processing liquid remaining in the liquid flow path can be changed.

According to the substrate processing apparatus of the fourth aspect,
In addition to the effects described in claims 1 to 3, the surface tension of the processing liquid remaining in the liquid flow path can be changed, so that a surface tension corresponding to the discharge flow rate discharged from each discharge hole can be obtained. Becomes

According to a fifth aspect of the present invention, there is provided a substrate processing apparatus according to any one of the first to fourth aspects.
The height dimension in the liquid flow path is in the range of 0.05 mm to 0.5 mm.

According to the substrate processing apparatus of the fifth aspect,
In addition to the effects described in claims 1 to 4, by setting the height in the liquid flow path to 0.05 mm to 0.5 mm, the height of the liquid flow path with respect to the discharge flow rate discharged from each discharge hole is increased. The surface tension of the processing liquid at the time can be optimized. Further, by setting the height dimension in the liquid flow path to be 0.05 mm to 0.5 mm, an assembly error of the nozzle body can be absorbed, and it is possible to suppress a variation in performance due to the assembly.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. FIG.
Is a schematic sectional view of the substrate processing apparatus, and FIG. 2 is a schematic plan view of the substrate processing apparatus.

In FIGS. 1 and 2, a substrate processing apparatus 1
Is for discharging and applying a developing solution as a processing solution onto the substrate W. The substrate processing apparatus 1 includes a support unit 2 that horizontally supports a substrate W, a nozzle unit 3 that discharges a developing solution onto the substrate W, a processing liquid supply unit 4 that supplies a developing solution to the nozzle unit 3, and a nozzle unit. Moving means 5 for moving (scanning) 3
And cleaning means 6 and the like. The substrate W is a general term for a liquid crystal glass substrate, a semiconductor wafer (silicon wafer), a glass substrate for a photomask, a substrate for an optical disk, and the like.
Exposure-processed.

As shown in FIG. 1, the support means 2 comprises a substrate W
Has a spin chuck 7 for vacuum suction and horizontally supporting
The spin chuck 7 is rotated together with the supported substrate W. The support means 2 is provided in the collection container 8 together with the substrate W. At the bottom of the collection container 8, there is provided a drainage unit 9 for discharging the developing solution and the cleaning solution. Further, the drainage unit 9 is connected to a regeneration processing device 11 through a pipe 10. The regeneration processing device 11 separates the developing solution and the cleaning solution, and returns the developing solution to the processing solution supply unit 4.

As shown in FIGS. 1 and 2, the nozzle means 3
Is disposed above the outside of the collection container 8 and discharges the developer onto the substrate W. The nozzle means 3 extends in the width direction H of the substrate W, as shown in FIG.

As shown in FIG. 1, the processing liquid supply means 4
It comprises a tank 12 for storing a developer, a pump 13 and an on-off valve 14. The tank 12 is connected to the nozzle means 3 through a pipe 15 and to the regenerating apparatus 11 through a pipe 16. The pump 13 is connected to the tank 1
The on-off valve 14 is disposed in a pipe 15 on the second side,
And a nozzle means 3 in a pipe 15.

As shown in FIG. 2, the moving means 5 is provided on the apparatus main body 17 and is connected to the nozzle means 3. The moving unit 5 moves (scans) the nozzle unit 3 above the substrate W orthogonally to the width direction H.

As shown in FIG. 2, the cleaning means 6 is a cleaning nozzle device (hereinafter, referred to as “cleaning nozzle device 6”) rotatably supported on the apparatus main body 17. The cleaning nozzle device 6 is swung above the substrate W and sprays a cleaning liquid (rinse liquid) on the substrate W.

Next, a specific configuration of the nozzle means 3 of the substrate processing apparatus 1 will be described with reference to FIGS. FIG. 3 is a front view of the nozzle means, and FIG. 4 is a cross-sectional view taken along line AA of FIG. FIG. 5 is a plan view seen from line BB in FIG.

In FIG. 3, the nozzle means 3 is provided above a horizontally supported substrate W, and has a long nozzle body 21 extending in the width direction H of the substrate W. The nozzle means 3 includes a support member 22 fixed on the nozzle body 21.
It is connected to the moving means 5 (see FIG. 2) by the like.

As shown in FIG. 4, the nozzle body 21 includes two block members 23 and 24. Block member 23
Is formed in a substantially L-shaped cross section, and the block member 24 is formed in a substantially inverted L-shaped cross section. This nozzle body 21
The two block members 23 and 24 are overlapped and fastened with a plurality of bolts 25. Each bolt 25 is connected to each block 23, 24 as shown in FIG.
Is inserted into a stepped bolt hole 26 formed on one of the blocks 23 with a gap E, and is screwed into a screw hole 27 formed on the other of the blocks 23 and 24.

As shown in FIG. 3 and FIG.
Has a port 28 connected to the processing liquid supply means 4 (see FIG. 1) through the pipe 15. This port 28
Is disposed at the center of the substrate W in the width direction H. Further, as shown in FIG. 3, the port 28 is
4 and is open at the upper end of the nozzle body 21.

As shown in FIG. 3 and FIG.
, A liquid storage chamber 29 (manifold), a liquid discharge flow path 30, and a liquid flow path 31 are provided.

As shown in FIG. 3 and FIG.
Is formed over the two block members 23 and 24. The liquid reservoir chamber 29 communicates with the port 28 and extends inside the nozzle body 21 in the width direction H of the substrate W. A developing solution is introduced into the liquid reservoir chamber 29 from the port 28 and flows so as to be dispersed in the width direction H of the substrate W.

As shown in FIG. 3 and FIG.
0 is constituted by a plurality of discharge holes 32,
2 is formed on the block member 23. Each discharge hole 32
Are opened facing each other on the substrate W, and as shown in FIG.
In the width direction H of the substrate W, they are linearly aligned with an equal pitch P. Each of the discharge holes 32 discharges the developing solution over the width direction H of the substrate W. Further, as shown in FIG. 4, each of the discharge holes 32 is connected to the liquid storage chamber 29 from the opening end.
It extends to a higher position. Thus, each discharge hole 32 has a step that is higher than the liquid storage chamber 29.

As shown in FIG. 4, the liquid flow path 31 is formed between the block members 23 and 24, and communicates the upper end of the liquid storage chamber 29 and the upper end of each discharge hole 32. The liquid flow path 31 extends obliquely upward from the upper end of the liquid storage chamber 29,
Each discharge chamber 32 is open in the upper end. That is, the liquid flow path 31 has the above-mentioned step and the liquid storage chamber 29 and the discharge chambers 32.
And communicate with. Further, the liquid flow path 31 is provided in the width direction H of the substrate W.
Has been extended. The liquid flow path 31 introduces the developer from the liquid storage chamber 29 to each of the discharge holes 32. In addition, the liquid storage chamber 2
As shown in FIG. 3, both ends of the nozzle 9 and both ends of the liquid flow path 31 are closed by closing plates 33 fixed to both ends of the nozzle body 21, respectively.

Next, a series of processes performed by the substrate processing apparatus 1 will be described with reference to FIGS.

1 and 2, a substrate W is carried into a collection container 8 of the substrate processing apparatus 1 by a transfer device (not shown), and the substrate W is horizontally supported on the spin chuck 7 of the support means 2 by vacuum suction. In this state, the processing liquid discharging means 4
By driving the pump 13 and opening the on-off valve 14, the developer is introduced from the tank 12 into the nozzle means 3 through the pipe 15.

As shown in FIGS. 3 and 4, the developing solution is introduced into the liquid storage chamber 29 from the port 28 of the nozzle means 3, and is dispersed by the liquid storage chamber 29 in the width direction H of the substrate W. Swept away. When the liquid storage chamber 29 is filled with the developing solution, the developing solution flows into each of the discharge holes 32 from the liquid flow path 31 as shown in FIG. When each of the discharge holes 32 is filled with the developing solution, the developing solution is discharged from each of the discharge holes 32 to the substrate W by the pressure of the developing solution continuously introduced from the processing liquid supply unit 4 (see FIG. 1). . At this time, by controlling the amount and pressure of the developing solution by the processing liquid supply means 4, a small and uniform amount of the developing solution is discharged from each of the discharge holes 32.

Simultaneously with the discharge of the developing solution by the nozzle means 3, the nozzle means 3 is moved perpendicularly to the width direction H of the substrate W (scanning) by the moving means 5, as shown in FIGS.
Let it. By this movement, as shown in FIG. 6, a plurality of strip-shaped developing solutions R extending perpendicular to the width direction H of the substrate W and aligned in the width direction H are discharged onto the substrate W. Then, the strip-shaped developer R discharged onto the substrate W becomes a developer R having a uniform thickness due to the surface tension of the developer adjacent to each other as shown in FIG. As described above, the application of the developing solution R having a uniform thickness is achieved by discharging a small amount of the uniform processing solution R from each of the discharge holes 32 aligned in the width direction H of the substrate W and discharging the processing solution R onto the substrate W. The strip-shaped developers are brought into contact with each other. In this sense, as shown in FIG. 5, the pitch P between the discharge holes 32 is appropriately changed to adjust the interval between the strip-shaped developer R discharged onto the substrate W. In addition, each discharge hole 3
When 2 are aligned in the width direction H of the substrate W, the developer introduced into each of the discharge holes 32 can be made to have substantially the same pressure, and a small amount of the developer having a uniform thickness can be discharged in the width direction H of the substrate W.

As shown in FIGS. 1 and 2, when the application of the developer is completed, the movement of the nozzle means 3 is stopped, and
The operation of the pump 13 is stopped, and the on-off valve 14 is closed. At this time, even if the pump 13 is stopped, the developer flows into the liquid reservoir chamber 29 (see FIG. 4) of the nozzle unit 3 from the pipe 15 on the nozzle unit 3 side from the on-off valve 14. Therefore, as shown in FIG. 4, the developer in the liquid reservoir 29 is
An attempt is made to flow into each discharge hole 32 through the liquid flow path 31. However, the flow of the developing solution into each of the discharge holes 32 is such that each of the discharge holes 32 extends with a step higher than the liquid storage chamber 29, and the liquid storage chamber 29 and each of the discharge holes 3 are provided between the steps.
2 is blocked by the liquid passage 31. Further, the flow of the developer into each discharge hole 32 is also prevented by the surface tension of the developer remaining in the liquid flow path 31. Further, the developer remaining in each of the discharge holes 32 is supported and retained by the surface tension of the developer on the opening side of each of the discharge holes 32. Accordingly, even if a certain amount of the developer flows into the liquid storage chamber 29 after the introduction of the developer into the liquid storage chamber 29 is stopped, the developer is prevented from dripping from the discharge holes 32 onto the substrate W.

Subsequently, as shown in FIGS. 1 and 2, the nozzle means 3 is moved (scanned) by the moving means 5, and
Return to the position shown in. Then, the cleaning nozzle device 6 is turned to arrange it above the substrate W. In this state, the cleaning liquid is sprayed from the cleaning nozzle device 6 and sprayed onto the substrate W, and at the same time, the spin chuck 7 is rotated to wash away excess developer remaining on the substrate W. The developer and the cleaning solution that have spilled from the substrate W are collected by the regenerating apparatus 11 through the collection container 8, the drainage unit 9, and the pipe 10. In the regeneration processing device 11, the developer and the cleaning solution are separated, and the developer is returned to the tank 12.

As shown in FIGS. 1 and 2, the jetting of the cleaning liquid from the cleaning nozzle device 6 is stopped, and the spin chuck 7 is rotated at a high speed to blow off the cleaning liquid and the like adhering onto the substrate W, thereby removing the substrate. Dry W. When the drying is completed, the spin chuck 7 is stopped, and the substrate W is transferred to the next step by the transfer device.

As described above, according to the substrate processing apparatus 1, after the introduction of the developing solution into the nozzle means 3 is stopped, the dripping on the substrate W can be prevented. As a result, it is possible to guarantee the quality of the substrate W in the subsequent process without causing unevenness in the developing solution R applied to the entire area on the substrate W. Further, according to the substrate processing apparatus 1, a small and uniform developing solution can be discharged onto the substrate W from each of the discharge holes 32 of the nozzle means 3. And the manufacturing cost for the application of the developing solution can be reduced. Furthermore, each means 2
According to 6, the application of the developing solution to the substrate W, the washing, and the processing of drying can also be continuously and automatically performed.

Further, in the substrate processing apparatus 1, as shown in FIG.
Since it is formed only on the surface, it is possible to reduce unevenness of the developer discharged from each discharge hole 32 due to processing and assembly (fastening) errors of the block members 23 and 24. That is,
When forming each of the discharge holes 32 over the two block members 23 and 24, the diameter of each of the discharge holes 32 is substantially the same due to the processing and assembly errors of each of the block members 23 and 24 in addition to the processing error of each of the discharge holes 32. It will not be possible to reduce the diameter. From this viewpoint, each of the discharge holes 32 is formed concentrated on the block member 23, and the diameter of each of the discharge holes 32 is made substantially the same. Thus, a small amount of the developing solution can be uniformly discharged from each of the discharge holes 32, and it is possible to prevent the developing solution applied on the substrate W from becoming uneven.

In the substrate processing apparatus 1 according to the present invention, FIG.
7 are not limited to those shown in FIG.
The following embodiment can also be adopted.

(1) From the viewpoint of preventing the dripping described above, the height S in the liquid flow path 31 of the nozzle means 3 can be adjusted as shown in FIG. In FIG. 4, the height dimension S is the length of each block
After the combination of the block members 23,2,
4 is adjusted in the height direction within the range of the gap E. Then, each bolt 25 is inserted into each stepped bolt hole 26, and each block member 23, 24 is fastened. Thus, by adjusting the height S in the liquid flow path 31, the surface tension of the developer remaining in the liquid flow path 31 can be changed.
As a result, it is possible to obtain a surface tension corresponding to the amount of the developer discharged from each of the discharge holes 32, and it is possible to prevent liquid dripping by the surface tension. Further, by adjusting the height dimension S in the liquid flow path 31 to reduce the gap area for the developing solution flowing in the liquid flow path 31, each discharge hole 3
2 can be prevented from dripping.

(2) The height S in the liquid channel 31 is preferably in the range of 0.05 mm to 0.5 mm. Thereby, the surface tension can be made optimal with respect to the amount of the developer discharged from each discharge hole 32. Further, by setting the height dimension S in the liquid flow path in the range of 0.05 mm to 0.5 mm, an assembly error of the nozzle body 21 can be absorbed,
Variations in performance due to assembly can also be suppressed.

(3) As shown in FIG. 4, each discharge hole 32 of the nozzle means 3 does not necessarily need to be formed as a stepped hole. The stepped holes are provided for the convenience of processing each of the discharge holes 32. Preferably, the discharge holes 32 have the same small diameter. As described above, when the discharge holes 32 have the same small diameter, the amount of the developer remaining in the discharge holes 32 can be reduced, and the dripping can be reliably prevented.

(4) In the nozzle means 3, as shown in FIG. 8, the liquid discharge channel 30 may be composed of a plurality of discharge holes 32 and a liquid supply chamber 38. Each discharge hole 32 extends from the opening end to the vicinity of the liquid storage chamber 29. Liquid supply chamber 38
Are formed in the block member 23 and communicate with the discharge holes 32. The liquid supply chamber 38 extends in the nozzle body 21 in the width direction H of the substrate W and extends from each discharge hole 32 to a position higher than the liquid storage chamber 29. Thus, the liquid supply chamber 38 has a step that is higher than the liquid storage chamber 29,
A developer is introduced into each discharge hole 32. The liquid discharge flow path 30 connects the upper end of the liquid storage chamber 29 and the upper end of the liquid supply chamber 38 through the liquid flow path 31 to prevent the discharge of the developing liquid onto the substrate W and the prevention of liquid dripping. It is to be implemented.

(5) As the moving means 5, the nozzle means 3
Although the configuration for moving (scanning) with respect to the substrate W has been described, the substrate W may be moved with respect to the nozzle unit 3.

The substrate processing apparatus is not limited to an apparatus for discharging a developing solution onto a substrate, but may be a processing apparatus described below.

(1) A spin coater for discharging a resist solution onto a substrate: This spin coater includes a supporting means 2, a nozzle means 3, a moving means 5 and the like shown in FIGS. In the step of applying the resist film, it is required to control the thickness of the resist film with respect to the substrate and to reduce the amount of the resist solution used. Therefore, in the spin coater, FIGS.
By moving (scanning) the nozzle means 3 shown in (1) and discharging the resist liquid onto the substrate W, a small and uniform resist liquid can be applied onto the substrate W, and the amount of the resist liquid used can be reduced. And the dripping can be prevented by the structure of the nozzle means 3.

(2) Stripping apparatus for discharging stripping liquid onto substrate:
The peeling device includes a support unit 2, a nozzle unit 3, a moving unit 5, and the like shown in FIGS. In the stripping step, there is a method in which a stripping solution applied to a resist film on a substrate is reused. When the stripping solution is repeatedly applied on the resist film of the substrate, the concentration of the resist component in the stripping solution increases, and defects such as spots occur on the substrate. For this reason, there is a demand for shortening the use period of the stripping solution and minimizing the usage amount for one substrate. Therefore, in the peeling device, the nozzle means 3 shown in FIGS. 3 to 5 is moved (scanned).
By discharging the stripping liquid onto the substrate W, a small and uniform stripping liquid can be applied onto the substrate W, and the amount of the stripping liquid used can be minimized. And the dripping can be prevented by the structure of the nozzle means 3.

(3) An etching apparatus for discharging a chemical solution for etching onto a substrate: This etching apparatus includes a supporting means 2, a nozzle means 3, a moving means 5 and the like shown in FIGS. In the etching step, an aluminum-molybdenum film is often used as a wiring material. Since this film is composed of two types of metals having different etching rates,
The method of applying the chemical at the start of the etching greatly affects the etching process. Therefore, in the etching apparatus, FIG.
By moving (scanning) the nozzle means 3 shown in FIG. 5 to discharge the chemical solution onto the substrate W, a small and uniform chemical solution can be applied onto the substrate W, and the occurrence of etching unevenness can be suppressed. And the dripping can be prevented by the structure of the nozzle means 3.

(4) Cleaning apparatus for applying a cleaning liquid to a substrate:
This cleaning device includes a support unit 2, a nozzle unit 3, a moving unit 5, and the like shown in FIGS. In the cleaning step, functional water such as electrolytic ion water or ozone water, or a chemical solution may be used as the cleaning liquid to be discharged onto the substrate. On this occasion,
It is required to reduce the amount of functional water and chemical solution used and to obtain a uniform cleaning effect. Therefore, in the cleaning device, the nozzle means 3 shown in FIGS.
By discharging the chemical liquid onto the substrate W, a small amount of uniform functional water or chemical liquid can be applied onto the substrate W, and the effect of cleaning the substrate can be made uniform. And the dripping can be prevented by the structure of the nozzle means 3.

[Brief description of the drawings]

FIG. 1 is a schematic view showing a substrate processing apparatus of the present invention.

FIG. 2 is a schematic plan view showing a substrate processing apparatus of the present invention.

FIG. 3 is a front view showing nozzle means of the substrate processing apparatus.

FIG. 4 is a sectional view taken along line AA of FIG. 3;

FIG. 5 is a plan view seen from BB in FIG. 4;

FIG. 6 is a front view showing a state in which the processing liquid is discharged onto the substrate from each discharge hole of the nozzle means.

FIG. 7 is a front view showing a state where a processing liquid is applied to the entire area on the substrate from the nozzle means.

FIG. 8 is a front view showing a modified example of the nozzle means of the substrate processing apparatus.

FIG. 9 is a front view showing nozzle means of a conventional substrate processing apparatus.

FIG. 10 is a cross-sectional view as viewed from CC in FIG. 9;

[Description of Signs] 1 Substrate processing apparatus 2 Support means 3 Nozzle means 5 Moving means 29 Liquid storage chamber 30 Liquid discharge flow path 31 Liquid flow path 32 Discharge hole 38 Liquid supply chamber

Continued on the front page (51) Int.Cl. ⁷ Identification FI FI Theme Court II (Reference) G03F 7/16 502 G03F 7/16 502 H01L 21/027 H01L 21/30 564C 569A (72) Inventor Katsutoshi Nakata Amagasaki, Hyogo Prefecture 1-10 Fuso-cho, Sumitomo, Japan Sumitomo Precision Industries, Ltd. (72) Inventor Shunji Matsumoto 1-10 Fuso-cho, Amagasaki, Hyogo, Japan Sumitomo Precision Industries, Ltd. (72) Inventor Kazuhiko Harada Takago, Hyogo 7-1 Nakamachi Yasusaka F-term (reference) 2H025 AA18 AB16 EA05 4D075 AC04 AC64 AC84 DC21 DC22 4F041 AA06 AB01 BA12 BA13 BA52 4F042 AA07 EB05 EB18 EB19 5F046 JA02 JA03 LA03 LA04

Claims (5)

[Claims] 1. A supporting means for supporting a substrate, a nozzle means disposed above the substrate supported by the supporting means, for discharging a processing liquid onto the substrate, and the nozzle means supported by the supporting means. And a moving means for moving the substrate relative to the substrate, wherein the nozzle means faces a liquid reservoir chamber into which the processing liquid is introduced and a substrate supported by the supporting means. A liquid discharge flow path extending from the open end to a position higher than the liquid storage chamber, and a liquid flow path communicating an upper end of the liquid storage chamber and an upper end of the liquid discharge flow path. A substrate processing apparatus comprising: 2. The liquid discharge flow path is constituted by a plurality of discharge holes opened on the substrate supported by the support means so as to face each other and aligned in the width direction of the substrate. ,
The liquid passage extends from the opening end to a position higher than the liquid storage chamber, and an upper end of the liquid storage chamber and an upper end of each of the discharge holes communicate with the liquid flow path. 2. The substrate processing apparatus according to 1. 3. The liquid discharge flow path is opened opposite to a substrate supported by the support means, and communicates with the plurality of discharge holes aligned in the width direction of the substrate and the discharge holes. A liquid supply chamber extending from each of the discharge holes to a position higher than the liquid storage chamber, and an upper end of the liquid storage chamber and an upper end of the liquid supply chamber communicate with each other through the liquid flow path. The substrate processing apparatus according to claim 1, wherein: 4. The substrate processing apparatus according to claim 1, wherein a height in the liquid flow path is adjustable. 5. The height dimension in the liquid flow path is 0.05 m
The substrate processing apparatus according to claim 1, wherein the distance is in a range of m to 0.5 mm.