JP2002169278A - Composition for metal oxide thin film and method for manufacturing patterned metal oxide thin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a composition for a metal oxide thin film such that a patterned metal oxide thin film or metal oxide composite thin film having a definite and uniform composition can be easily manufactured and to provide a method for manufacturing the patterned metal oxide thin film or metal oxide composite thin film by using the above composition. SOLUTION: The patterned metal oxide thin film or metal oxide composite thin film is formed by using the composition for a metal oxide thin film prepared by dissolving a metal salt of unsaturated carboxylic acid having at least 9 carbon atoms in a solvent, applying the obtained composition on a substrate, irradiating the composition with light, etching with a solvent and then calcining.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composition for a metal oxide thin film that can be patterned and a method for producing a patterned metal oxide thin film.

[0002]

2. Description of the Related Art Conventionally, metal oxide thin films have been used in various industrial applications by utilizing their characteristic properties.
There are various methods for producing a metal oxide thin film, and the representative production method is as follows. 1) Physical deposition method: vacuum deposition method (electron beam deposition method), molecular beam epitaxy method, sputtering method, ion deposition method, laser ablation method 2) Chemical deposition method: thermal CVD method, plasma CVD method, MO
CVD method 3) Liquid phase growth method: liquid phase epitaxy method 4) Other growth methods: thermal decomposition of coating thin film by sol-gel method

In a current electronic device, as a method of forming and patterning a metal oxide thin film, a metal oxide thin film is formed on a substrate by a gas phase method (sputtering method, vapor deposition method, ablation method). A photoresist layer is provided thereon, light is radiated through a photomask, and the exposed portion is removed. Then, the metal oxide thin film is patterned by dry etching with CF ₄ or the like, and the unexposed portion of the photoresist is removed. A photolithography method is generally used.

[0004]

In the method for producing a metal oxide thin film as described above, particularly in the physical deposition method, the chemical deposition method, and the liquid phase growth method, a large-scale apparatus such as a vacuum equipment is required. There is a problem in cost and mass productivity.
Alternatively, in the sol-gel method, the problem of cost can be solved, but a problem arises in that all metal oxides cannot be formed, and the metal alkoxide as a raw material is easily susceptible to hydrolysis. Must be performed below, and workability deteriorates. In order to pattern the metal oxide thin film formed by these methods, the photolithography method described above is used, but this method is long and very complicated.
Accordingly, an object of the present invention is to provide a composition for a metal oxide thin film capable of easily producing a patterned metal oxide thin film and a method for producing a patterned metal oxide thin film using the composition. To provide.

[0005]

Means for Solving the Problems The inventors of the present invention have made intensive studies to solve the above-mentioned problems, and as a result, have used a metal oxide thin film composition in which a metal salt of an unsaturated carboxylic acid is dissolved in a solvent. The present inventors have found that the above problem can be solved by applying a composition for a metal oxide thin film to a substrate, irradiating a desired pattern with light, and baking after etching with a solvent, thereby achieving the present invention.

That is, the method for producing a metal oxide thin film of the present invention can be achieved by the following (1) to (4). (1) A composition for a metal oxide thin film, wherein a metal salt of an unsaturated carboxylic acid having at least 9 or more carbon atoms is dissolved in a solvent. (2) The composition for a metal oxide thin film according to the above (1), further comprising a photopolymerization initiator (3) The above (1), further comprising an amine compound Or the composition for a metal oxide thin film according to (2). (4) a step of applying the composition for a metal oxide thin film according to any one of the above (1) to (3) to a substrate, a step of irradiating the formed applied film with light through a photomask, A method for producing a patterned metal oxide thin film, comprising: a step of etching a coating film with a solvent; and a step of firing and then firing to form a patterned metal oxide thin film.

[0007] The composition for a metal oxide thin film of the present invention is applied to a substrate, the formed coating film is irradiated with light through a photomask to cure the photosensitive portion, and then etched with a solvent to obtain a non-photosensitive material. Only the portion is dissolved and removed by the solvent, and a negative pattern is formed in which the photosensitive portion remains. Thereafter, baking is performed to completely remove organic components, whereby a patterned metal oxide thin film can be formed. According to such a manufacturing method of the present invention, a metal oxide thin film can be formed on a substrate in the air, so that no vacuum or atmosphere control is required, and the patterning process is simplified, so that the cost is high. No need for dry etching equipment
Capital investment becomes easier. Further, if the thin film can be formed in the air, there is an advantage that the area can be increased and the productivity is very good. Further, a thin film can be formed on a substrate having a curved surface. Further, the sintering can be performed at a lower temperature than in the case where a thin film is manufactured by a conventional vapor deposition method or the like, so that workability is improved. Further, by using the composition for a metal oxide thin film of the present invention, the composition of the obtained metal oxide thin film can be precisely controlled. That is, two or more compositions are uniformly mixed in an arbitrary ratio in a solution state, and the mixture is coated, irradiated with light, etched with a solvent, and fired to form a patterned metal oxide composite having a clear and uniform composition. A thin film can be easily manufactured. These can be used as an oxide material having a patterned multi-element composition such as a piezoelectric material, various dielectric materials, a pyroelectric material, a magnetic material, a superconductor, and an optical element.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
The composition for a metal oxide thin film of the present invention is a solution in which a metal salt of an unsaturated carboxylic acid having at least 9 or more carbon atoms is dissolved in a solvent. As the unsaturated carboxylic acid having 9 or more carbon atoms, oleic acid, ω-tricosenoic acid, undecylenic acid, monounsaturated carboxylic acids such as cinnamic acid, linoleic acid, diunsaturated carboxylic acids such as diacetylene derivatives, And triunsaturated carboxylic acids such as linolenic acid. These unsaturated carboxylic acids can be used alone or in combination of two or more. Mixtures of long-chain unsaturated carboxylic acids such as oleic acid and linoleic acid obtained from soybean oil, cottonseed oil and olive oil can also be used as inexpensive raw materials.

The metal salt of the unsaturated carboxylic acid is obtained by dissolving or dispersing an ammonium salt of an unsaturated carboxylic acid and / or an alkali metal salt of an unsaturated carboxylic acid and a metal compound in water and / or an organic solvent, and contacting the metal compound. Can be manufactured more easily. The unsaturated carboxylic acid ammonium salt can be synthesized by dissolving or dispersing the unsaturated carboxylic acid in water and / or an organic solvent and contacting it with ammonia gas, aqueous ammonia, ammonium carbonate, or the like. Further, the unsaturated carboxylic acid alkali metal salt,
It can be synthesized by dissolving or dispersing an unsaturated carboxylic acid in water and / or an organic solvent and contacting with an alkali metal or an alkali hydroxide or an alkali metal salt.

[0010] The metal compounds include I in the periodic table.
B, IIA, IIB, IIIA, IIIB, IVA, IVB, VA, V
Salts, hydroxides, oxides, and the like of the anions of the metals B, VIA, VIB, VIIA, VIIB, and VIII are used. Particularly preferably, IB, IIA, IIB, IIIA, IIIB, IVA, IVB, V
The salts of the anions of the A, VB, VIA, VIIA, VIII metals and rare earth metals are used in aqueous solution. Specific examples of preferred metals include Cu, Ag, Be, Mg, Ca, S
r, Ba, Zn, Cd, Sc, Y, rare earth metal, Al,
Ga, In, Tl, Ti, Zr, Hf, Si, Ge, S
n, Pb, V, Nb, Ta, Bi, Cr, Mo, W, M
n, Fe, Co, Ni, Ru, Rh, Pb, Ir, Pt
Is mentioned. These metal compounds can be used as a mixture of two or more kinds. By doing so,
It is possible to obtain an unsaturated carboxylic acid metal salt mixture containing an arbitrary ratio of metals and uniformly dispersed in a molecular state. Alternatively, the same effect can be obtained even if two or more unsaturated carboxylic acid metal salts are mixed and used in a solution depending on the purpose. That is, even if two or more kinds of unsaturated carboxylic acid metal salts are uniformly mixed in an arbitrary ratio in a solution state, a metal oxide composite thin film having a clear and uniform pattern can be easily produced. It is possible to

The unsaturated carboxylic acid metal salt has high solvent solubility and is used by dissolving it in various solvents. Methano
Alcohol compounds such as ethanol, n-propyl alcohol, iso-propyl alcohol, 2-ethylhexanol, phenoxyethanol and methoxyethanol; aromatic hydrocarbons such as benzene, toluene and xylene; ketone compounds such as acetone, methyl ethyl ketone and acetylacetone; Ester compounds such as ethyl acetate, butyl acetate, and ethyl propionate; ether compounds such as diethyl ether, dibutyl ether, terahydrofuran, and ethylene glycol dimethyl ether; and amide compounds such as formamide, N-methylformamide, and N, N-dimethylacetamide And nitrogen compounds such as N-methylpyrrolidone. Since the solubility of the unsaturated carboxylic acid metal salt in the solvent varies depending on the type of the metal compound and the type of the unsaturated carboxylic acid, it is necessary to select the best solvent for each unsaturated carboxylic acid metal salt used.

For the purpose of increasing the curing speed in patterning, it is preferable to add a photopolymerization initiator to the solution of the metal salt of unsaturated carboxylic acid. The photopolymerization initiator includes aromatic ketones such as benzophenone and thioxanthone as carbonyl compounds, acetophenone, 2-hydroxy-2-
Methyl-propiophenone, 2,2-dimethoxy-2-
Examples include acetophenones such as phenylacetophenone and benzoin ether, diketones such as benzyl and methylbenzoyl formate, and acylphosphine oxides such as 2,4,6-trimethylbenzoyldiphenylphosphine oxide. Other examples include sulfur compounds such as tetramethylthiuram disulfide, organic peroxides such as benzoyl peroxide, and azo compounds such as azobisisobutyronitrile. When using a photopolymerization initiator, the photopolymerization initiator absorbs light and generates radicals, so it must be well suited to the absorption region from the light source, and must have a high curing rate, and a metal salt solution of unsaturated carboxylic acid. It is necessary to select in consideration of good compatibility with, and low price.

Further, an amine compound such as an aliphatic amine or an aromatic amine can be added to the unsaturated carboxylic acid metal salt solution for the purpose of increasing the curing rate of the unsaturated carboxylic acid metal salt. N, N-dimethyl-2 as an aliphatic amine
-Hydroxyethylamine and the like; and aromatic amines include dibenzylamine and p-dimethylaminobenzonitrile. Here, the amine compound is preferably used together with the photopolymerization initiator. This is because the combination of the photopolymerization initiator and the amine compound makes it possible to further increase the curing speed as compared with the case where the photopolymerization initiator is used alone.

A crosslinking agent may be used for the purpose of increasing the curing speed and further increasing the adhesion to the substrate. As the crosslinking agent, a polyfunctional monomer having an unsaturated hydrocarbon group, an azide group, an azo group, a nitrile group, a cinnamic acid group, or the like is used. Specifically, bifunctional styrene derivatives, bifunctional vinyl ethers, aromatic divinyl compounds,
Aromatic bisdiazide, diazonaphthoquinone and the like can be mentioned. Preferably divinylbenzene, diallyl phthalate,
3,3′-diazidophenylsulfone, 4,4′-diazido-2,2′-dimethoxybiphenyl and the like.

The selection of a photopolymerization initiator, an amine compound, a crosslinking agent and the like differs depending on the purpose of use. These can be used alone or in combination of two or more. Because the curing rate of the unsaturated carboxylic acid metal salt by light irradiation differs depending on the type of the metal compound and the type of the unsaturated carboxylic acid, it is necessary to select the best combination for each unsaturated carboxylic acid metal salt used.

Next, the method for producing a patterned metal oxide thin film of the present invention will be described in detail. The patterned metal oxide thin film of the present invention is a step of applying the composition for a metal oxide thin film to a substrate, a step of irradiating the formed coating film with light through a photomask, and applying a solvent to the coating film of an unexposed portion with a solvent. An etching step, and a step of firing and then firing to form a patterned metal oxide thin film.

FIG. 1 is a process chart for explaining a method for producing a patterned metal oxide thin film of the present invention. First, Figure 1
As shown in (a), a substrate 1 on which a patterned metal oxide thin film is to be formed is prepared. As the substrate, glass, metal, semiconductor, ceramics, heat-resistant plastic, or the like is used. Examples of the glass include soda lime glass, quartz glass, non-alkali glass, and borosilicate glass. Examples of the metal include stainless steel, aluminum, and alloys of various metals. Examples of the semiconductor include a silicon substrate and a compound semiconductor substrate such as GaAs and GaN. Examples of the ceramic include alumina, sapphire, silicon carbide, magnesium oxide, and the like. Examples of the plastic include polycarbonate, polyimide, polysulfone, and polyethersulfone. Further, it is not limited by the shape of the substrate to be used, and a film shape, a thick plate shape, or a shape having a curve such as a molded product can be used. According to the present invention, a thin film can be easily formed. be able to.

Next, as shown in FIG.
The composition for a metal oxide thin film containing a metal salt of an unsaturated carboxylic acid as a main component is coated on a substrate 1 and dried to form a coating film 2. At this time, the coating method on the substrate 1 is not limited, and the coating is performed by various methods generally used such as a spin coating method, a bar coating method, a dip coating method, a flow coating method, and a screen printing method. it can.

Subsequently, light is applied to the formed coating film 2 through a photomask 3 having a desired pattern, and a photosensitive portion 4 is formed.
Is cured (FIG. 1 (c)). At this time, visible light, ultraviolet light, X-rays, or electron beams can be used for the irradiation. Of these, ultraviolet rays are preferably used in consideration of the curing speed, energy saving, space saving of equipment, and the like.

After the light irradiation, the unexposed portions 5 are dissolved in a solvent and removed by etching (FIG. 1D). The method of etching with a solvent at this time is not limited, but an immersion method in which a sample is immersed in an etching solution to perform etching is the simplest method. When the immersion method is used, the type, temperature, stirring speed, and the like of an etching solution to be used are etching factors, and the etching speed is controlled by adjusting these factors. The type of the etchant is not particularly limited as long as it is a solvent capable of dissolving the unsaturated metal carboxylate, but it is preferable to select a solvent having high solubility in the solvent of the unsaturated metal carboxylate.

After the etching, the remaining photosensitive portion 4 is baked to obtain a patterned metal oxide thin film 6 (FIG. 1E). The firing temperature at this time varies depending on the metal of the metal salt used, the composition, the type of the substrate, and the like.
It is carried out in the range of 00 ° C, preferably in the range of 300 to 1800 ° C. The calcination time also depends on the metal and composition of the metal salt used, but is usually 5 minutes to 10 hours, preferably 10 minutes to
It is baked for 5 hours. If the calcination time is short, it is not possible to completely remove the organic components caused by the composition containing a metal salt of unsaturated carboxylic acid as a main component, and it is not possible to obtain a high-purity metal oxide. Conversely, if the firing time is long, there is no particular problem. However, a long effect is not expected, and it is uneconomical. After firing, annealing may be performed at a constant temperature to grow crystals. In this case, the annealing temperature depends on the crystal growth temperature of the metal oxide. The atmosphere at the time of firing is sufficient in the air, but the atmosphere may be changed by adding nitrogen and oxygen. That is, in the initial stage of firing, the composition containing the unsaturated metal carboxylate as the main component is thermally decomposed by increasing the ratio of nitrogen, and then fired in a high oxygen atmosphere to obtain the target metal oxide. .

[0022]

EXAMPLES Next, the present invention will be described more specifically with reference to examples, but the present invention is not limited to the description of the following examples unless it exceeds the gist. [Example 1] (Production example of zinc oleate) 200 ml containing a rotor
Oleic acid (11.30 g, 40 mmo)
1) was precisely weighed and dissolved by adding 20 ml of acetone and 80 ml of water. 25% ammonia water (2.7 ml,
(40 mmol) was added slowly to prepare a homogeneous solution of ammonium oleate. This solution contains Zn (NO ₃ ) _2.
When 6H ₂ O (5.95 g, 20 mmol) was dissolved in 20 ml of water and added dropwise, a white precipitate was formed. The resulting precipitate was filtered, washed with water, and dried to obtain 12.21 g of zinc oleate white powder. The yield was 97.2%.

(Production Example of Zinc Oxide Thin Film) 1.00 g of the obtained zinc oleate and 0.21 g of 2,2-dimethoxy-2-phenylacetophenone were mixed with 8.40 g of toluene.
And 0.48 g of methanol, and the solution was applied on a heat-resistant glass by a spin coater at 1,000 rpm for 15 seconds in the air, and then dried in vacuum at 40 ° C. After drying, ultraviolet rays were irradiated for 5 minutes in the air using a copper foil as a photomask. After the irradiation, the unexposed part is
It was immersed for minutes and etched. After the etching, the film was placed in an electric furnace and baked in air at 500 ° C. for 30 minutes and at 750 ° C. for 30 minutes to obtain a patterned zinc oxide thin film. The thickness was 251 nm.

Example 2 (Production Example of Magnesium Linoleate) Instead of oleic acid used in Example 1, linoleic acid (11.2 g, 40
mmol) with M instead of Zn (NO ₃ ) ₂ .6H ₂ O
The same operation as in Example 1 was performed except that gCl ₂ .6H ₂ O (4.07 g, 20 mmol) was used, to obtain 11.11 g of a pale yellow viscous solid of magnesium linoleate. The yield was 95.3%.

(Production Example of Magnesium Oxide Thin Film) 1.00 g of the obtained magnesium linoleate and 0.08 g of 2,2-dimethoxy-2-phenylacetophenone were dissolved in 3.10 g of toluene, and this solution was placed on a heat-resistant glass. The coating was performed by a spin coater at 1,000 rotations for 15 seconds in the air, and then vacuum dried at 40 ° C. After drying, ultraviolet rays were irradiated for 5 minutes in the air using a copper foil as a photomask. After the irradiation, the unexposed portion was immersed in toluene for 1 minute for etching. After etching, put in electric furnace, 500 ℃ in air
For 30 minutes at 750 ° C. for 30 minutes to obtain a patterned magnesium oxide thin film. The film thickness was 159 nm.

Example 3 (Production Example of Lead Oleate) The Zn (N
_{O 3) 2 · 6H 2 O} Pb (NO 3 in place of) ₂ (6.62
g, 20 mmol), and the same operation as in Example 1 was carried out to obtain a lead oleate ocher waxy solid 14.86.
g was obtained. The yield was 96.5%.

(Production Example of Lead Oxide Thin Film) 1.00 g of the obtained lead oleate and 0.07 g of benzoin ethyl ether
Was dissolved in 5.64 g of toluene, and this solution was applied on a heat-resistant glass in the air at 1,000 rpm for 15 seconds by a spin coater, and then dried at 40 ° C. in vacuo. After drying, ultraviolet rays were irradiated for 5 minutes in the air using a copper foil as a photomask. After the irradiation, the unexposed portion was immersed in toluene for 1 minute for etching. After the etching, the film was placed in an electric furnace and fired in air at 500 ° C. for 30 minutes and at 750 ° C. for 30 minutes to obtain a patterned lead oxide thin film. The film thickness was 89 nm.

Example 4 (Production Example of Zirconium Linoleate) Instead of oleic acid used in Example 1, linoleic acid (11.2 g, 40
mmol) is replaced with Zn instead of Zn (NO ₃ ) ₂ .6H ₂ O.
_{rOCl 2 · 8H 2 O (6.45g} , 20mmol) except that the above was used procedure as in Example 1 to give a pale yellow viscous solid 13.18g of linoleic acid zirconium. The yield was 96.3%.

(Production Example of Zirconium Oxide Thin Film) 1.00 g of the obtained zirconium linoleate and 0.0 of benzyl
6 g and 0.06 g of dibenzylamine in toluene 5.
19 g of this solution, and the solution was placed on a heat-resistant glass in air at room temperature.
After applying with a spin coater for 000 rotations for 15 seconds,
Vacuum dried at 40 ° C. After drying, ultraviolet light was irradiated for 3 minutes in the air using a copper foil as a photomask. After the irradiation, the unexposed portion was immersed in toluene for 1 minute for etching. After the etching, put in an electric furnace and in air at 500 ° C for 30 minutes.
And baked at 750 ° C. for 30 minutes to obtain a patterned zirconium oxide thin film. The film thickness was 163 nm.

Example 5 (Production Example of Titanium Linoleate) 200 m including a rotor
linoleic acid (11.20 g, 40 mmol)
1) was precisely weighed and dissolved by adding 20 ml of acetone and 80 ml of water. 25% ammonia water (2.7 ml,
(40 mmol) was added slowly to prepare a homogeneous solution of ammonium linoleate. Add TiCl ₄ (3.
(79 g, 20 mmol) was added dropwise under a N ₂ atmosphere to form a white precipitate. The resulting precipitate was filtered, washed with water and dried to give a pale yellow viscous solid of titanium linoleate 1
2.00 g were obtained. The yield was 93.6%.

(Production Example of Titanium Oxide Thin Film) 1.00 g of the obtained titanium linoleate and 0.02 g of benzophenone
0.02 g of dibenzylamine, 0.0
4 g was dissolved in 3.66 g of toluene, and this solution was applied on a heat-resistant glass in the air at 1,000 rpm for 15 seconds using a spin coater, and then dried at 40 ° C. in vacuo. After drying, ultraviolet rays were irradiated for 2 minutes in the air using a copper foil as a photomask. After the irradiation, the unexposed portion was immersed in toluene for 1 minute for etching. After the etching, the film was placed in an electric furnace and baked in air at 500 ° C. for 30 minutes and at 750 ° C. for 30 minutes to obtain a patterned titanium oxide thin film. The film thickness is 151
nm.

Example 6 (Example of Production of Lead Oleate / Zirconium Oleate) Oleic acid (1) was placed in a 200 ml flask containing a rotor.
1.30 g, 40 mmol) was precisely weighed and acetone 20 m
and 80 ml of water were added and dissolved. To this, 25% aqueous ammonia (2.7 ml, 40 mmol) was slowly added to prepare a homogeneous solution of ammonium oleate. The solution _{Pb (NO 3) 2 (3.31g} , 10mmol) and _{ZrOCl 2 · 8H 2 O (3.22g} , 10mmol) and the dropwise dissolved in water 20ml white precipitate formed. The resulting precipitate was filtered, washed with water, and dried to obtain 14.26 g of a pale yellow viscous solid of a mixture of lead oleate and zirconium oleate. The yield was 97.8%.

(Production Example of Lead Zirconate Thin Film) 1.00 g of the obtained mixture of lead oleate and zirconium oleate
And benzophenone 0.14 g, divinylbenzene 0.2
1 g was dissolved in 6.87 g of toluene, and this solution was applied on a heat-resistant glass in the air at 1,000 rpm for 15 seconds by a spin coater, and then dried in vacuum at 40 ° C. After drying, ultraviolet light was irradiated for 3 minutes in the air using a copper foil as a photomask. After the irradiation, the unexposed portion was immersed in toluene for 1 minute for etching. After the etching, the film was placed in an electric furnace and baked in air at 500 ° C. for 30 minutes and at 750 ° C. for 30 minutes to obtain a patterned lead zirconate thin film. The film thickness is 18
7 nm.

Example 7 (Production Example of Lead Zirconate Titanate (PZT) Thin Film) 0.75 g of lead oleate obtained in Example 3 and 0.05 g of benzoin ethyl ether are dissolved in 1.73 g of toluene. . Separately, 0.37 g of zirconium linoleate obtained in Example 4 and 0.05 g of benzoin ethyl ether are dissolved in 1.73 g of toluene. Further, 0.28 g of titanium linoleate obtained in Example 5 and 0.03 g of benzoin ethyl ether are dissolved in 1.73 g of toluene.
These three types of solutions were adjusted and mixed, and the obtained solution was applied on a heat-resistant glass in the air at 1,000 rpm for 15 seconds by a spin coater, followed by vacuum drying at 40 ° C. After drying, ultraviolet rays were irradiated for 5 minutes in the air using a copper foil as a photomask. After the irradiation, the unexposed portion was immersed in toluene for 1 minute for etching. After the etching, the film was placed in an electric furnace and fired in air at 500 ° C. for 30 minutes and at 750 ° C. for 30 minutes to obtain a patterned thin film of lead zirconate titanate. The film thickness was 143 nm.

[0035]

As described above, according to the present invention,
By using a composition for a metal oxide thin film containing an unsaturated carboxylic acid having 9 or more carbon atoms as a main component, the patterning process is simplified, equipment investment is significantly reduced, and a large area of the metal oxide thin film is obtained. And has many advantages such as very high productivity. Further, by using the composition for a metal oxide thin film of the present invention, the composition of the obtained metal oxide thin film can be precisely controlled. That is, two or more compositions are uniformly mixed in an arbitrary ratio in a solution state, and then applied, irradiated with light,
By etching and baking with a solvent, a patterned metal oxide composite thin film having a clear and uniform composition can be easily produced. Thus, the patterned metal oxide thin film or metal oxide composite thin film is
It is possible to efficiently and inexpensively manufacture with a shorter process than before.

Recently, in applications such as piezoelectrics, various dielectrics, pyroelectrics, magnetics, superconductors, optical elements, etc., metal oxide thin films, and complexly patterned multi-component metal oxides have been developed. There is a demand for composite thin films. It is of great significance that the method for producing a metal oxide thin film of the present invention can be provided at that time, and the technical value of completing the method is very large.

[Brief description of the drawings]

FIG. 1 is a process chart illustrating a method for producing a patterned metal oxide thin film of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Coating film 3 ... Photomask 4 ... Exposure part 5 ... Unexposed part 6 ... Patterned metal oxide thin film

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme court ゛ (Reference) G03F 7/004 501 G03F 7/004 501 5F046 511 511 7/40 521 7/40 521 H01L 21/027 H01L 21 / 30 502Z F-term (reference) 2H025 AA19 AB17 AB20 AC01 AD01 BC38 CC20 FA29 FA40 2H096 AA27 AA30 BA01 BA05 EA02 HA01 HA17 4D075 BB20Z BB28Z BB40Y BB42Y BB46Y BB48 DB04 DB23 DB23 DC24 EA07 EB24 EB47 EC07 EC37 4J011 QA08 QA19 SA02 SA12 SA14 SA16 SA19 SA20 SA22 SA32 SA42 SA61 SA64 SA78 SA79 SA83 SA84 UA01 UA03 UA04 UA06 VA01 WA01 4J100 AK12P AK21P CA01 CA04 JA38 5F046 AA20 AA28

Claims (4)

[Claims] 1. A composition for a metal oxide thin film, wherein a metal salt of an unsaturated carboxylic acid having at least 9 carbon atoms is dissolved in a solvent. 2. The composition for a metal oxide thin film according to claim 1, further comprising a photopolymerization initiator. 3. The composition for a metal oxide thin film according to claim 1, further comprising an amine compound. 4. A step of applying the composition for a metal oxide thin film according to claim 1 to a substrate, a step of irradiating the formed coating film with light through a photomask,
A method for producing a patterned metal oxide thin film, comprising: a step of etching a coating film on a non-photosensitive portion with a solvent; and a step of baking after etching to form a patterned metal oxide thin film.