JP2002168959A - Energy dispersion type x-ray detection device, scanning electron microscope using the same and electron beam micro analyzer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an energy dispersion type X-ray detection device having excellent vibration proofness and provided with a detecting part with a high low-noise decomposition function in a low cost. SOLUTION: An electrode 2, to which a semiconductor X-ray detection element 1 and a high-voltage wire 8 are connected via a slit opening 10, is included in an insulator 3, which is stored in an element holder 4. A finger body 6 with high thermal conductivity coupled with a cold finger 7 contains a first stage FET 11, a gate electrode 13 connected to the gate and provided on the end face, and a substrate 5 provided with a heater resistance 12 mounted thereon and a FET wiring 9 for sending and receiving signals to and from outside. By fastening a female screw of the element holder 4 and a male screw 14 of the finger body to each other, the semiconductor X-ray detection element 1 is fixed with the electrode 2 and the gate electrode 13 sandwiching it.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an energy dispersive X-ray detector for performing elemental analysis of a sample by detecting characteristic X-rays generated from the surface of the sample.
The present invention relates to a structure of a tip for holding a semiconductor X-ray detection element used in a beam apparatus, an electron beam microanalyzer, and the like.

[0002]

2. Description of the Related Art When an electron beam is irradiated on the surface of a sample, a quantum such as a characteristic X-ray, a reflected electron, or a secondary electron is generated as a result of the interaction between the electron and the substance. These quanta are mediums of information that indicate the properties of the sample. Among them, an electron beam microanalyzer (EPMA) is a device mainly for detecting characteristic X-rays and performing nondestructive elemental analysis of a minute region of a sample. E
The PMA includes an electron irradiation system, a sample stage, an X-ray spectrometer, an electronic scanning device, a computer control device, and a data processing system. The part handling the electron beam is called an irradiation system or a lens barrel, and is kept in a vacuum of about 10 ⁻³ to 10 ⁻⁴ Pa. It is accelerated at a voltage of 1 to 50 kV. This electron beam is narrowed down (electron probe) by the action of the electromagnetic lens of the focusing lens and the objective lens, and is irradiated on the sample in the sample chamber. The electron beam on the sample has a diameter of 4
It becomes about 0Å-1μm, but the diameter is 100μ depending on the purpose of analysis.
m or more can be adjusted by changing the excitation of the electromagnetic lens. In order to irradiate an electron probe to a desired analysis place on a sample, the sample is mounted on a sample stage provided with a moving mechanism such as horizontal movement, vertical movement, and rotation. The analysis location is usually
It is determined by observing a scanned image on a CRT with an electronic scanning device incorporated in the irradiation system (or the sample chamber). X-rays generated from the surface of the sample irradiated by the electron probe include characteristic X-rays having wavelengths specific to the elements constituting the sample. The characteristic wavelength of the X-ray is represented by the atomic number and the following equation:
They are linked by Ray's law. λ = C / (Z−σ) ² , Z: atomic number, C, σ: constant If λ is measured with an X-ray spectrometer, Z can be known, and thus the elements constituting the sample can be known. Further, since the energy E of the X-ray has a relationship of λ (Å) and E (KeV) ≒ 12.4 / λ, the element can be known from the value of the energy. X-ray spectrometers include a wavelength dispersive spectrometer (WDS) and an energy dispersive spectrometer (EDS) that directly detects X-ray energy with a semiconductor detector. Here is the latter EDS
Will be described. In EDS, X in the semiconductor detector
The wire creates a number of electron-hole pairs in the semiconductor that is proportional to its energy, generating an electrical signal. By identifying the magnitude of the electric signal with the multi-wave height analyzer, the energy value E of the X-ray can be known and the constituent elements of the sample can be detected.

FIG. 4 shows the structure of an energy dispersive X-ray detector. The sample 21 is irradiated with an electron beam from the electron gun 20, and the sample 21 emits characteristic X-rays. Normally, the semiconductor X-ray detection element 1 is housed in a cylindrical thin member called an end cap 24.
And the cold finger 7 is kept in a vacuum state. The semiconductor X-ray detection element 1 is attached to the tip of the cold finger 7 in order to improve the measurement performance,
The liquid nitrogen stored in the Dewar 35 is cooled to near the temperature. The characteristic X-rays emitted from the sample 21 pass through the holes of the collimator 22 and pass through the X-ray entrance window 23 made of an extremely thin member, and the semiconductor X-ray detection element 1 provided in the element holder 4 is provided. Is detected by Collimator 2
2 is provided with a plurality of holes having different hole diameters, and is selectively set according to the intensity of the characteristic X-ray. The collimator 22 is held by a support shaft 26. And the support shaft 2
6 is an O-ring 28 that shuts off the vacuum inside the housing 29 and the atmospheric pressure of the outside air. The collimator 22 supported on the O-ring 28 and the support block 25 provided on the base block 30 and attached to the tip is rotated by the drive lever 32 to select and set a collimator hole.
On the other hand, the cylindrical end cap 24 containing the semiconductor X-ray detecting element 1 has an end cap so that the distance between the sample 21 and the semiconductor X-ray detecting element 1 can be adjusted in order to adjust the X-ray sensitivity. A detector main body block 34 attached to the other end of 24 is fixed to the rail 31, and is driven back and forth by turning a handle 33. The end cap 24 blocks the vacuum inside the housing 29 from the atmospheric pressure of the outside air by the O-ring 27.

[0004]

The conventional energy dispersive X-ray detector is constructed as described above. However, in order to maintain the performance of the semiconductor X-ray detector 1, a dual 35 containing liquid nitrogen is used. The liquid nitrogen is sent from the dewar 35 to a member called a cold finger 7 to cool the semiconductor X-ray detecting element 1 provided in the element holder 4 at the tip, and to cool the cold finger 7. Supports the tip. At this time, in order to increase the detection efficiency, the semiconductor X-ray detection element 1 needs to be as close to the sample 21 as possible, so that the cold finger 7 and the end gap 24 containing the same must have a long length. On the other hand, in order to reduce the electric noise, an FET 11 for amplifying the first-stage signal is provided in the finger main body 6 as close as possible to the semiconductor X-ray detecting element 1. Therefore, the semiconductor X-ray detecting element 1 and the first stage F
The ET 11 is provided at the tip of the long cold finger 7, and the semiconductor X-ray detection element 1 and the FET 11
Depending on the holding method, the structure becomes extremely weak against vibration. Therefore, there is a problem that the method of fixing these members becomes complicated, the number of parts increases, and the processing conditions become strict, resulting in an increase in cost. On the other hand, it is generally known that the temperature at which the first stage FET 11 exhibits the lowest noise characteristic is several tens degrees higher than the temperature of the cold finger 7 cooled at the liquid nitrogen temperature. Therefore, by optimizing the temperature of the heater provided in the first-stage FET 11, the noise characteristics of the FET 11 are improved, and a high-resolution energy-dispersive X-ray detector can be realized.

[0005] The present invention has been made in view of such circumstances, and is more excellent in vibration resistance and lower cost than the conventional structure. In addition, the present invention realizes low cost by optimizing the heater temperature of the FET. An object of the present invention is to provide an energy dispersive X-ray detector having a structure of a detector tip with high noise resolution.

[0006]

In order to achieve the above object, an energy dispersive X-ray detector according to the present invention irradiates a sample with an electron beam, X-rays, or the like, and emits a characteristic X-ray generated from the sample surface. In an energy dispersive X-ray detection apparatus for detecting an element and performing elemental analysis, an element holder containing a semiconductor X-ray detection element and provided with a cylindrical female screw, and amplifying a signal from the semiconductor X-ray detection element A finger body containing a substrate having the first-stage FET and having a cooling mechanism and provided with a screw, and fastening the element holder and the finger body with the female screw and the male screw to fix the semiconductor X-ray detection element It is configured so that

Further, according to the energy dispersive X-ray detecting device of the present invention, in the energy dispersive X-ray detecting device according to the first aspect, the element holder accommodating the semiconductor X-ray detecting element is made of a metal material having a large thermal expansion coefficient. On the other hand, the finger body accommodating the substrate having the first-stage FET is made of a metal material having a smaller thermal expansion coefficient than the element holder.

The energy dispersive X-ray detector according to the present invention is the energy dispersive X-ray detector according to the first aspect, wherein the high voltage wiring for supplying a voltage to the electrode of the semiconductor X-ray detecting element is provided. A slit-shaped opening is provided in the element holder so that it can pass through the element holder.

Further, according to the energy dispersive X-ray detecting device of the present invention, in the energy dispersive X-ray detecting device according to the first aspect of the present invention, the FET having a first stage FET for amplifying a signal from the semiconductor X-ray detecting element is provided on the substrate. A heater resistor for controlling the temperature is provided, the rated value of the resistor is set to 1/4 W or more, and the resolution of the device is made smaller than 144 eV.

Further, the invention described in claim 5 is an energy dispersing type X according to claims 1 to 4.
A scanning electron microscope or an electron beam microanalyzer equipped with a line detector.

An energy dispersive X-ray detecting apparatus according to the present invention is configured as described above, and includes an element holder accommodating a semiconductor X-ray detecting element and provided with a cylindrical female screw; First stage FE for amplifying the signal from
An element for accommodating a substrate having T and having a cooling mechanism, which is fastened with a screw to a finger body provided with a screw to fix the semiconductor X-ray detection element, and further to accommodate the semiconductor X-ray detection element The holder is made of a metal material having a large thermal expansion coefficient, while the finger body containing the substrate having the first-stage FET is made of a metal material having a small thermal expansion coefficient as compared with the element holder, and a semiconductor X-ray detector is provided. A substrate having a slit-shaped opening so that a high-voltage wiring for supplying a voltage to an electrode of the element can be passed through the element holder, and further including a first-stage FET for amplifying a signal from the semiconductor X-ray detection element Is provided with a heater resistor for controlling the temperature of the FET, and the rated value of the resistor is reduced to 1 /
The resolution of the device is set to be smaller than 144 eV by setting it to 4 W or more. Therefore, a member called a device holder provided with a semiconductor X-ray detection element and a member called a finger body which is a main constituent material to which a substrate provided with an FET is bonded are fastened, and these two coefficients of thermal expansion are used. Vibration resistance peculiar to the conventional method of fixing a semiconductor X-ray detecting element by a spring by pressing the semiconductor X-ray detecting element directly on the substrate on which the FET is provided and fixing it by contact , The spring component can be eliminated, and the vibration resistance can be improved. Furthermore, by directly fastening the element holder containing the semiconductor X-ray detection element to the main body of the finger using screws, the fixing method is simplified, the number of parts is reduced, and a low-cost finger body structure is realized. can do. Furthermore, this simple structure improves the heat conduction to the element, promotes the cooling of the element,
Higher resolution can be obtained. On this occasion,
When fastening the element holder, the high-voltage wiring for applying a high voltage was sometimes twisted by fastening.However, by opening a slit-shaped opening in the element holder, it is possible to make the structure without twisting of the high-voltage wiring. it can. This makes it possible to minimize the noise caused by the wiring. Further, in this structure, the rated value of the heater resistance for controlling the temperature of the FET is optimized to be 1/4 W or more,
The noise characteristics of the ET can be improved, and a high-resolution energy dispersive X-ray detector can be realized.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the energy dispersive X-ray detector according to the present invention will be described with reference to FIGS. FIG. 1 is an exploded view of the structure of an element holder 4 accommodating a semiconductor X-ray detecting element 1 of the energy dispersive X-ray detecting apparatus of the present invention and a detecting portion inside a tip end of a finger body 6, and FIG. Show. The present energy dispersive X-ray detection apparatus differs from the conventional apparatus in the internal structure of the finger body 6 attached to the tip of the cold finger 7 and the detection unit fastened by the element holder 4. It has the structure shown in The other components are the same as those shown in FIG.

The apparatus is cooled to a temperature close to the temperature by liquid nitrogen stored at the tip of the cold finger 7 and stored in the dewar 35, and is built in a thin-walled cylindrical end cap 24 which is evacuated. An element holder 4 and a finger body 6 are fastened to each other, and a semiconductor X-ray detection element 1 and a detection section having an FET 11 and a heater resistor 12 provided on a substrate 5 therein, a rail 31 for moving the detection section back and forth, a handle 33, and a support shaft And a drive lever 32 for selecting a hole of the collimator 22.
And a support block 25 for passing the support shaft 26 and the end cap 24.

The detection section of the present apparatus has a hole of a detection port 15 through which a characteristic X-ray is incident on the front surface, and a slit-like opening 10 through which a high-voltage wiring 8 is passed is provided in a cylindrical circumference. An element holder 4 having a female screw in the opening on the side, a cylindrical insulator 3 in which the electrode 2 and the semiconductor X-ray detection element 1 are accommodated, and a semiconductor X-ray detection element 1 for detecting characteristic X-rays. , High voltage wiring 8 for applying a high voltage thereto, and electrode 2
And a cold finger 7 that cools and holds the semiconductor X-ray detection element 1 by thermally connecting the tip and the dewar 35.
A finger body 6 made of a material having good heat conductivity, such as copper, which has a substrate 5 mounted therein, is processed with a screw 14 on the outer periphery of one end of the cylindrical shape, and is fastened to the element holder 4 by a male screw 14; An FET 11 for amplifying the signal from the X-ray detecting element 1 in the first stage, a gate electrode 13 connected to the gate of the FET 11 and a heater resistor 12 for controlling the operating temperature of the FET 11 are mounted to transmit and receive signals to and from the outside. And a substrate 5 provided with an FET wiring 9.

The end cap 24 is provided for the sample 21
Since the sample 21 is set in the sample chamber 9 and the distance from the mounting flange to be attached to the housing 29 to the sample 21 is long, the length of the end cap 24 to be inserted is also long. In order to reduce the weight, the thickness is made thin and cylindrical, the inside is evacuated, and the cooled semiconductor X-ray detecting element 1 and cold finger 7 are built in. Further, inside the housing 29, a thin X-ray incident window 23 for transmitting characteristic X-rays is provided at the end, and the other end outside the housing 29 is attached to the detector main body block 34. Then, the inside of the vacuum housing 29 and the housing 29
The outside is sealed with an O-ring 27. The detector main body block 34 is fixed to the rail 31, and the end cap 24 moves forward and backward by turning the handle 33. As a result, the semiconductor X-ray detection element 1 approaches or moves away from the sample 21.

The semiconductor X-ray detecting element 1 has an incident characteristic X
A line creates a number of electron-hole pairs in a semiconductor in proportion to its energy in a semiconductor to generate an electrical signal.
i) Crystals are used and are cooled with liquid nitrogen during X-ray measurements to improve performance (reduce thermal noise). In this apparatus, the liquid nitrogen is stored in the dewar 35, and the semiconductor X-ray detecting element 1 mounted at the tip by the member of the cold finger 7 is cooled to a temperature close to the liquid nitrogen temperature in the evacuated end cap 24. The element holder 4 containing the semiconductor X-ray detecting element 1 at the tip and the finger body 6 are supported by a cold finger 7 and are connected to a liquid nitrogen dur 35. In order to reduce the temperature, it is cooled to near the temperature of liquid nitrogen and used. Then, the high-voltage wiring 8 is connected to the electrode 2 through the slit-shaped opening 10 provided in the element holder 4, further through the insulator 3, and a high voltage is applied to the semiconductor X-ray detection element 1. And the semiconductor X-ray detecting element 1 is
In order to insulate it from the outside, it is put together with the electrode 2 in an insulator 3 made of, for example, BN (boron nitride) or the like, and housed in an element holder 4. Then, when fastening the element holder 4 on which the female screw is processed and the finger body 6 on which the male screw 14 is processed, the semiconductor X-ray detecting element 1 is sandwiched between the electrode 2 and the gate electrode 13 and The output end of the line detection element 1 and the gate electrode 13 provided on the substrate 5 are electrically fixed. As a result, the output signal of the semiconductor X-ray detection element 1 is output by the gate electrode 13 provided on the substrate 5
The signal is extracted from ET11.

The substrate 5 is provided with an FET 11 chip for amplifying a signal from the semiconductor X-ray detecting element 1 in the first stage and a heater resistor 12 for heating the chip. A gate terminal of the FET 11 is provided on an end face of the substrate 5. The gate electrode 13 is electrically connected to a preamplifier (not shown) at the subsequent stage by the FET wiring 9. The temperature of the FET 11 chip during operation is controlled by the heater resistor 12 provided on the substrate 5 and the chip is heated. Then, the substrate 5 is fixed to the mounting position processed on the finger body 6 by an adhesive.

Next, the features of the present apparatus will be described according to the claims. In claim 1, the semiconductor X-ray detecting element 1 is arranged between the substrate 5 and the element holder 4, and the semiconductor X-ray detecting element 1 is directly applied to the gate electrode 13 provided on the substrate 5, and the female screw is provided. The semiconductor X-ray detecting element 1 is fixed by a structure in which the holder 4 is directly fastened to the finger body 6 having a male screw. By adopting such a simple structure, the number of parts can be reduced. The manufacturing cost is reduced. In addition, since the heat conduction between the finger main body 6 and the semiconductor X-ray detecting element 1 is improved, and the cooling of the semiconductor X-ray detecting element 1 can be further promoted, high-resolution measurement is performed. This is advantageous. In this apparatus, a structure without a spring component is obtained by bonding the substrate 5 and the finger body 6 and fastening the element holder 4 to the finger body 6. By adopting a structure having no spring component, the vibration resistance can be remarkably improved.

Each member undergoes thermal contraction because it is cooled to the temperature of liquid nitrogen. For this reason, in the conventional structure, a spring is inserted between the semiconductor X-ray detecting element 1 and the gate electrode 13, or a spring is inserted between the substrate 5 and the finger body 6 without bonding the substrate 5. Thus, a structure is generally adopted in which the semiconductor X-ray detecting element 1 and the gate electrode 13 can be kept in electrical contact even when each member undergoes thermal contraction. However, a structure having a spring component is inferior in anti-vibration characteristics, and becomes a detection unit that is vulnerable to vibration.

According to the second aspect, the element holder 4 is, for example,
A member having a large coefficient of thermal expansion, such as aluminum, is used. On the other hand, the finger body 6 uses a member, such as copper or brass, having a smaller coefficient of thermal expansion than the element holder 4. As a result, when cooled to liquid nitrogen, the element holder 4 having a higher thermal shrinkage shrinks from the finger body 6 and acts in a direction to fix the semiconductor X-ray detecting element 1. Since the thermal contraction rate of the element 1 and the insulating material 3 is so small as to be negligible as compared with metal, the electrical contact between the gate electrode 13 and the semiconductor X-ray detecting element 1 is not impaired.

According to the third aspect, when the element holder 4 is fastened to the finger body 6, the high-voltage wiring 8 for supplying a high voltage to the electrode 2 is twisted or inadvertently long, which causes noise. One cause to pick up. In view of this, the present apparatus is characterized in that a slit-like opening 10 is provided in which the wiring inlet of the element holder 4 provided for passing the high-voltage wiring 8 is formed in a slit shape. If the wiring inlet is merely a hole as in the prior art, the direction of the element holder 4 after fastening and the direction of a wiring destination connector (not shown) or the like may be different from each other by up to 180 °. At this time, a twist of a half circumference of the cold finger 7 occurs in the high-voltage wiring 8. In this device, since the opening has a slit shape, the direction through which the high-voltage wiring 8 passes can be matched with the direction of the connector at the wiring destination, regardless of the direction after fastening, so that A straight and short wiring path can be taken. Therefore, noise due to twisting of the high voltage wiring 8 can be suppressed as much as possible. The fourth aspect is characterized in that the resolution of the device is improved by optimizing the capacity of the heater resistor for heating the FET 11 mounted on the substrate 5 and the heater voltage. In the structure of the finger body 6 described above, the heater resistor 12 provided on the substrate 5 functions as a heater for heating the chip of the FET 11. In general, the noise characteristics of the FET 11 chip are best when the temperature is several tens degrees higher than the liquid nitrogen temperature. Noise will increase if the temperature is too low or too high. Therefore, the temperature of the substrate 5 cooled to the finger body 6 cooled to the liquid nitrogen temperature may be too low. Therefore, a current is supplied to the heater resistor 12 to increase the temperature, and the noise characteristic is adjusted to the best value.
It is necessary to heat the tip of ET11. In FIG.
Experimental data obtained by changing the heater voltage applied to the heater resistor 12 in the detection unit having the structure of the finger body 6 described above is shown. The heater resistance used was 400Ω. Here, the heater voltage is 9.6 V, and the resolution of the detection unit (the half-value energy width at MnKα) is 131.1 e.
V, which indicates that optimization has been achieved. That is, it is understood that the resolution of the detection unit is optimized by the data shown in FIG. 3 when the heater rating is 1/4 W or more. The present apparatus is characterized in that, when the heater rating is 1/4 W or more, the resolution of the detection unit is optimized to be the best.

Next, an example of the operation of the present apparatus will be described. First, the sample 21 is placed on the sample stage, set in a predetermined place in the sample chamber, and the inside of the housing 29 is evacuated. Electron gun 20
The state of the sample surface is observed on the monitor with the scanning electrons from the monitor, and the analysis position is determined. The determined position is set by moving the sample stage to the analysis target position. It is checked whether the semiconductor X-ray detecting element 1 provided at the tip is cooled normally, and the substrate 5 provided in the finger body 6 is further cooled.
It is confirmed that the optimum voltage is applied to the heater resistor 12 for heating the FET 11 mounted thereon (this is unnecessary in the case of automatic setting).
1 to generate characteristic X-rays therefrom. First, the handle 33 is turned to bring the end cap 24 containing the semiconductor X-ray detection element 1 close to the sample 21. Then, the drive lever 32 is turned to select a collimator hole of the collimator 22. The measurement is performed by setting to a level that can be measured by the intensity of the characteristic X-ray generated from the sample 21. The electric signal is applied to a multiple wave height analyzer to obtain an energy spectrum.

[0023]

The energy dispersive X-ray detecting apparatus of the present invention is constructed as described above, and comprises an element holder accommodating a semiconductor X-ray detecting element and a finger body accommodating a substrate having a first stage FET. Concluded by the semiconductor X
The line detection element is fixed, the element holder is made of a metal material with a large coefficient of thermal expansion, the finger body is made of a metal material with a small coefficient of thermal expansion compared to the element holder, and high-voltage wiring is passed through the element holder. A slit-shaped opening is provided so as to be able to be provided, and a heater resistor for controlling the temperature of the FET is provided on the substrate. The rated value of the resistor is set to 1/4 W or more, and the resolution of the device is made smaller than 144 eV.
Therefore, by directly fastening the element holder to the finger body by screws, heat conduction to the semiconductor X-ray detection element can be improved with a simple structure, cooling can be promoted, and higher resolution can be obtained. In addition, the fixing method can be simplified, the number of components can be reduced, and a low-cost finger body structure can be realized. Then, by directly pressing the semiconductor X-ray detecting element against the substrate on which the FET is provided and fixing the semiconductor X-ray detecting element, the spring component can be eliminated, and the vibration resistance can be improved by a fixing method based on a difference in thermal expansion coefficient. Furthermore, since the slit-shaped opening is provided so that the high-voltage wiring is not twisted when the element holder is fastened, the wiring can reduce flicker noise as much as possible. Further, the rated value of the heater resistance for controlling the temperature of the FET is optimized to be 1/4 W or more, the noise characteristic of the FET is improved, and a high-resolution energy dispersive X-ray detector can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram showing one embodiment of an energy dispersive X-ray detection device of the present invention.

FIG. 2 is a diagram showing a cross section of a finger tip portion of the energy dispersive X-ray detection device of the present invention.

FIG. 3 shows F of the energy dispersive X-ray detector of the present invention.
FIG. 9 is a diagram showing experimental data of resolution with respect to a heater voltage for ET heating.

FIG. 4 is a diagram showing a conventional energy dispersive X-ray detector.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Semiconductor X-ray detection element 2 ... Electrode 3 ... Insulator 4, 4a ... Element holder 5 ... Substrate 6, 6a ... Finger main body 7 ... Cold finger 8 ... High voltage wiring 9 ... FET wiring 10 ... Slit-shaped opening 11 ... FET 12 Heater resistance 13 Gate electrode 14 Male screw 15 Detection port

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G21K 7/00 G21K 7/00 H01L 31/09 H01L 31/00 A 31/02 31/02 EF term ( Reference) 2G001 AA01 AA03 BA04 BA05 CA01 DA01 DA10 KA01 RA03 SA02 2G088 EE29 FF03 FF15 GG21 JJ09 5F088 BA03 BA07 BA16 BB10 EA07 JA20 LA07 LA08

Claims (5)

[Claims] 1. A sample is irradiated with an electron beam, X-rays, or the like,
An energy dispersive X-ray detector for detecting characteristic X-rays generated from a sample surface and performing elemental analysis, comprising: an element holder containing a semiconductor X-ray detection element and provided with a cylindrical female screw; A finger body containing a substrate having a first-stage FET for amplifying a signal from the element and having a cooling mechanism and provided with a screw, and fastening the element holder and the finger body with the female screw and the male screw. An energy dispersive X-ray detector, wherein the semiconductor X-ray detector is configured to be fixed. 2. An energy dispersive X-ray detecting apparatus according to claim 1, wherein said element holder for accommodating a semiconductor X-ray detecting element is made of a metal material having a large thermal expansion coefficient, while accommodating a substrate having a first-stage FET. Wherein the finger body is made of a metal material having a smaller coefficient of thermal expansion than the element holder.
Line detector. 3. An energy dispersive X-ray detecting apparatus according to claim 1, wherein said element holder is provided so that a high voltage wiring for supplying a voltage to an electrode of the semiconductor X-ray detecting element can be passed through said element holder. An energy-dispersive X-ray detection apparatus, characterized in that a slit-shaped opening is provided in the X-ray detector. 4. The energy dispersive X-ray detecting apparatus according to claim 1, further comprising a heater resistor for controlling the temperature of the FET on a substrate having a first stage FET for amplifying a signal from the semiconductor X-ray detecting element. An energy dispersive X-ray detection apparatus characterized in that the rated value of is 1/4 W or more and the resolution of the apparatus is made smaller than 144 eV. 5. A scanning electron microscope or an electron beam micro-analyzer comprising the energy dispersive X-ray detector according to claim 1, 2, 3, or 4.