JP2002158172A5 - - Google Patents
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- JP2002158172A5 JP2002158172A5 JP2001244163A JP2001244163A JP2002158172A5 JP 2002158172 A5 JP2002158172 A5 JP 2002158172A5 JP 2001244163 A JP2001244163 A JP 2001244163A JP 2001244163 A JP2001244163 A JP 2001244163A JP 2002158172 A5 JP2002158172 A5 JP 2002158172A5
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- JP
- Japan
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001244163A JP2002158172A (ja) | 2000-09-05 | 2001-08-10 | 半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置 |
US09/946,898 US6746942B2 (en) | 2000-09-05 | 2001-09-05 | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
US10/828,882 US7365358B2 (en) | 2000-09-05 | 2004-04-21 | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-269274 | 2000-09-05 | ||
JP2000269274 | 2000-09-05 | ||
JP2001244163A JP2002158172A (ja) | 2000-09-05 | 2001-08-10 | 半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002158172A JP2002158172A (ja) | 2002-05-31 |
JP2002158172A5 true JP2002158172A5 (ja) | 2006-12-21 |
Family
ID=26599310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001244163A Pending JP2002158172A (ja) | 2000-09-05 | 2001-08-10 | 半導体薄膜、半導体薄膜の製造方法、及び単結晶半導体薄膜の製造装置、並びに単結晶薄膜の製造方法、単結晶薄膜基板、半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002158172A (ja) |
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2001
- 2001-08-10 JP JP2001244163A patent/JP2002158172A/ja active Pending