JP2002157712A - Spin valve type thin film magnetic element, thin film magnetic head, floating magnetic head, and manufacturing method of spin valve type thin film magnetic element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a spin valve type thin film magnetic element, with which the output property is improved and also the generation of the side reading can be prevented. SOLUTION: The spin valve type thin film magnetic element 1 is adopted, such as constituted to be furnished on a substrate 364 with a laminated body 9 showing the magnetic reluctance effect, a pair of hard bias layers 32 positioned at both sides of a free magnetic layer 7 in the direction X1 of track width to align the direction of magnetic moment of the free magnetic layer 7 to one direction, a pair of read layers 34 laminated on the hard bias layer 32, and a pair of insulated layers 30 positioned between at least the side surfaces 9b at the both sides of the laminated body 9 in the direction of track width and the hard bias layers 32, and also characterized by that overlay parts 34a extendedly provided onto a part 9a of the laminated body 9 are respectively arranged on a pair of the read layers 34, and tip parts 34b of the overlay parts 34a are joined to the laminated body 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spin-valve thin-film magnetic element, a thin-film magnetic head, a floating magnetic head, and a method for manufacturing a spin-valve thin-film magnetic element. And a technology capable of reducing the occurrence of side reading.

[0002]

2. Description of the Related Art A spin-valve thin-film magnetic element is a type of GMR (Giant Magnetoresistive) element that exhibits a giant magnetoresistance effect, and detects a recording magnetic field from a recording medium such as a hard disk. Moreover, this spin-valve thin-film magnetic element has such advantages that the structure is relatively simple among the GMR elements, the resistance change rate is high with respect to an external magnetic field, and the resistance changes with a weak magnetic field. .

FIG. 19 is a cross-sectional view showing a structure of a conventional spin-valve thin-film magnetic element viewed from a surface (ABS surface) facing a recording medium. The spin-valve thin-film magnetic element shown in FIG. 19 has a so-called dual spin-valve thin-film magnetic element in which a nonmagnetic conductive layer, a fixed magnetic layer, and an antiferromagnetic layer are laminated one on each side of the free magnetic layer in the thickness direction. Element. In FIG. 19, the Z direction in the drawing is the moving direction of a magnetic recording medium such as a hard disk, and the Y direction in the drawing.
Direction is the direction of a leakage magnetic field from the magnetic recording medium, shown X ₁ direction is the track width direction of the spin valve thin film magnetic element.

A conventional spin-valve thin-film magnetic element 301 shown in FIG. 19 has an underlayer 303 made of Ta or the like, a first antiferromagnetic layer 304, and a first pinned magnetic layer 3 on a substrate 302.
05, a first nonmagnetic conductive layer 306 made of Cu or the like, a free magnetic layer 307, a second nonmagnetic conductive layer 3 made of Cu or the like
08, a second pinned magnetic layer 309, a second antiferromagnetic layer 310, and a protective layer 311 made of Ta or the like. And a pair of hard bias layers 332 and 332
A pair of lead layers 33 made of Cu or the like formed on
4 and 334.

[0005] The first pinned magnetic layer 305 is formed by laminating a first ferromagnetic pinned layer 305a, a first non-magnetic intermediate layer 305b, and a second ferromagnetic pinned layer 305c.
The thickness of the second ferromagnetic pinned layer 305c is larger than the thickness of the first ferromagnetic pinned layer 305a. The magnetic moment direction of the first ferromagnetic pinned layer 305a is fixed in the illustrated Y direction by an exchange coupling magnetic field with the first antiferromagnetic layer 304, and the second ferromagnetic pinned layer 305c is connected to the first ferromagnetic pinned layer 305a. And its magnetic moment direction is fixed in the direction opposite to the Y direction in the figure.

As described above, the first and second ferromagnetic pinned layers 30
Since the directions of the magnetic moments of the layers 5a and 305c are antiparallel to each other, the magnetic moments of the respective layers cancel each other.
5c is formed thicker than the first ferromagnetic pinned layer 305a, so that the magnetic moment of the second ferromagnetic pinned layer 305c slightly remains.
The direction of the entire magnetic moment is fixed in the direction opposite to the illustrated Y direction.

The second pinned magnetic layer 309 includes a third ferromagnetic pinned layer 309a, a second non-magnetic intermediate layer 309b,
The fourth ferromagnetic pinned layer 309c is laminated. The thickness of the third ferromagnetic pinned layer 309a is larger than the thickness of the fourth ferromagnetic pinned layer 309c. The magnetic moment direction of the fourth ferromagnetic pinned layer 309c is fixed in the opposite direction to the illustrated Y direction by the exchange coupling magnetic field with the second antiferromagnetic layer 310, and the third ferromagnetic pinned layer 309a
Is antiferromagnetically coupled to the fourth pinned ferromagnetic layer 309c, and its magnetic moment direction is fixed in the Y direction in the figure.

In the second pinned magnetic layer 309, as in the case of the first pinned magnetic layer 305, the third and fourth ferromagnetic pinned layers 3
Although the respective magnetic moments of the third ferromagnetic pinned layers 309a and 309c cancel each other,
Since a is formed thicker than the fourth ferromagnetic pinned layer 309c, the magnetic moment of the third ferromagnetic pinned layer 309a slightly remains, and the magnetic moment direction of the entire second pinned magnetic layer 309 is fixed in the Y direction in the figure. Is done.

As described above, the first and second pinned magnetic layers 305,
309 denotes first to fourth ferromagnetic pinned layers 305a and 305
c, 309a and 309c are antiferromagnetically coupled, respectively, and the second and third ferromagnetic pinned layers 305c and 309a
The magnetic moment of each remains, and the layer shows an artificial ferrimagnetic state (synthetic ferrimagnet).

The free magnetic layer 307 includes a first anti-diffusion layer 307a made of Co or the like, a ferromagnetic free layer 307b made of NiFe alloy, and a second anti-diffusion layer 30 made of Co or the like.
7c are laminated. The first and second diffusion preventing layers 307a and 307c prevent mutual diffusion between the ferromagnetic free layer 307b and the first and second nonmagnetic conductive layers 306 and 308. The direction of the magnetic moment of the free magnetic layer 307 is aligned in the X1 direction by the bias magnetic field of the hard bias layers 332 and 332. As a result, the direction of the magnetic moment of the free magnetic layer 307 and the direction of the magnetic moment of the first and second fixed magnetic layers 305 and 309 cross each other.

The lead layers 334 and 334 are laminated on the hard bias layers 332 and 332, and further, from both sides of the laminate 312 in the X1 direction (track width direction) in the drawing.
X1 of the laminated body 312 extends toward the center of
It rides on both ends in the direction (the both ends in the track width direction) and is attached to the laminate 312. The portion to be attached to the stacked body 312 is formed by overlaying parts 334 of the lead layers 334 and 334.
a, 334a. Overlay parts 334a, 33
4a are spaced apart from each other on the stacked body 312 by a distance Tw.

The first antiferromagnetic layer 304 is formed so as to protrude beyond the first fixed magnetic layer 305 and the free magnetic layer 307 on both sides in the X1 direction (track width direction). Ta, W, or Cr is provided between the protrusions 304a, 304a of the first antiferromagnetic layer 304 and the hard bias layers 332, 332.
Bias underlayers 331 and 331 are laminated. Further, intermediate layers 333, 333 made of Ta, W, or Cr are stacked between the hard bias layers 332, 332 and the lead layers 334, 334.

In the spin-valve thin-film magnetic element 301, when a detection current (sense current) is applied from the lead layers 334, 334 to the laminated body 312, and a leakage magnetic field from the magnetic recording medium is applied in the Y direction, free magnetic properties are obtained. The direction of the magnetic moment of the layer 307 changes from the X1 direction to the Y direction. The electrical resistance changes depending on the relationship between the change in the magnetic moment direction of the free magnetic layer 307 and the magnetic moment directions of the first and second pinned magnetic layers 305 and 309 (this is referred to as a magnetoresistance (MR) effect). The leakage magnetic field from the magnetic recording medium is detected by the voltage change based on the change in the electric resistance value.

In the spin-valve thin-film magnetic element 301, the stacked layers 31 are formed from the lead layers 334 and 334.
The detection current (sense current) given to FIG.
As shown in FIG. 7, the voltage is applied to the stacked body 312 from the vicinity of the tips 334b and 334b of the overlay portions 334a and 344a. Therefore, the most concentrated sense current in the stacked body 312 is caused by the overlap portion 33 shown in FIG.
4a and 334a are the central portions where they are not adhered. At this central portion, the magnetoresistance (MR) effect becomes remarkable, and the detection sensitivity of the leakage magnetic field of the magnetic recording medium increases. Therefore, this central portion is referred to as a sensitivity region S as shown in FIG. On the other hand, in the portion where the overlay portions 334a and 334a are attached, the sense current is extremely small as compared with the sensitivity region S, the magnetoresistance (MR) effect is reduced, and the detection sensitivity of the leakage magnetic field of the magnetic recording medium is reduced. I do.
The portion where the overlay portions 334a and 334a are attached is referred to as an insensitive region N.

As described above, by attaching the overlay portions 334a and 334a of the lead layers 334 and 334 to a part of the laminated body 312, a portion (sensitivity) substantially contributing to the reproduction of the recording magnetic field from the magnetic recording medium. A region S) and a portion (insensitive region N) that does not substantially contribute to the reproduction of the recording magnetic field from the magnetic recording medium are formed, and the width Tw of the sensitive region S is formed.
Is the track width of the spin-valve thin-film magnetic element 301, and it is possible to cope with a narrow track.

[0016]

However, as shown in FIG. 19, the sense current in the conventional spin-valve thin-film magnetic element 301 is not affected by the overlay portions 334a and 334.
The substrate 30 of the second antiferromagnetic layer 310 from the lead layer 334 via the hard bias layer 332 and the shunt component J2 applied from the bases 334c and 334c to the laminate 312.
Split component J that flows directly from the second side to the side surface of the laminate 312
3 exists, and these branch components J2 and J3 have a size that cannot be ignored.

As a result, in the insensitive region N, a change in magnetoresistance due to the shunt components J2 and J3 of the sense current appears,
The signal of the recording track of the magnetic recording medium corresponding to the insensitive area N is reproduced. In particular, when the recording track width and the recording track interval are reduced to reduce the track width for the purpose of increasing the recording density, the information of the adjacent recording tracks in addition to the recording tracks to be read out in the sensitivity region S is not limited to the above. Side reading that is read in the insensitive region N occurs, and this becomes noise with respect to the output signal, which may cause an error.

Further, there has been a fundamental need to further improve the output characteristics and the sensitivity of the spin-valve thin-film magnetic element.

The present invention has been made in view of the above circumstances, and aims to achieve the following objects. To improve output characteristics of a spin-valve thin-film magnetic element. To prevent the occurrence of side reading. Provided is a method for manufacturing the spin-valve thin-film magnetic element. To provide a thin-film magnetic head including the spin-valve thin-film magnetic element.

[0020]

In order to achieve the above object, the present invention employs the following means. A spin-valve thin-film magnetic element according to the present invention has a laminate having at least a free magnetic layer and a pinned magnetic layer and exhibiting a magnetoresistive effect on a substrate; A pair of hard bias layers for aligning the magnetic moment direction of the free magnetic layer in one direction, at least a pair of lead layers laminated on the hard bias layer, and at least side surfaces of the laminate on both sides in the track width direction of the laminate And a pair of insulating layers located between the hard bias layer and the pair of lead layers, wherein the pair of lead layers are respectively provided with overlay portions extending over a part of the laminate, The tip of the portion is joined to the laminate. In the spin-valve thin-film magnetic element of the present invention, it is preferable that a thickness of the insulating layer on a side surface of the stacked body is in a range of 0.5 nm or more and 5 nm or less. In the present invention,
The insulating film employs a means made of any one of aluminum oxide, silicon oxide, tantalum oxide, titanium oxide, zirconium oxide, hafnium oxide, chromium oxide, vanadium oxide, niobium oxide, or a mixture of two or more of these. You can also. In the present invention, the insulating layer may extend to the substrate side of the hard bias layer. Further, in the present invention, a bias underlayer may be provided between the hard bias layer and the insulating layer. In the present invention, the insulating layer extends from a side surface of the laminate to both end portions in the track width direction of an upper surface of the laminate, and overlay portions of the pair of lead layers are provided, respectively, and a tip portion of the overlay portion is provided. It is possible to extend to the center side of the laminate from the insulating film and to join the laminate. In the present invention, the thickness of the insulating layer on the upper surface of the laminate is 0.5 nm.
The range can be not less than 20 nm and not more than 20 nm. In the present invention, a width dimension in a track width direction of each tip portion of the overlay portion bonded to the laminate is 0.01 μm or more and 0.0 μm or more.
It may be in the range of 5 μm or less. In the present invention, the width of the overlay portion in the track width direction may be in a range of 0.1 μm or more and 0.3 μm or less. Also,
In the present invention, the laminate includes the free magnetic layer,
A nonmagnetic conductive layer, the fixed magnetic layer, and an antiferromagnetic layer that fixes the direction of the magnetic moment of the fixed magnetic layer by an exchange coupling magnetic field may be at least sequentially laminated. In the present invention, the laminated body may include a nonmagnetic conductive layer on both sides in the thickness direction of the free magnetic layer,
A means may be employed in which the fixed magnetic layer and an antiferromagnetic layer for fixing the magnetic moment direction of the fixed magnetic layer by an exchange coupling magnetic field are at least sequentially laminated. In the present invention, an insulating film may be provided between the hard bias layer and the lead layer, the insulating film extending to both ends in the track width direction of the laminate.
A thin-film magnetic head according to the present invention may include the spin-valve thin-film magnetic element according to any one of the above as a read element for magnetically recorded information. And a thin-film magnetic head described in (1). The method for producing a spin-valve thin-film magnetic element of the present invention is characterized in that, after forming a laminated film including at least a free magnetic layer and a fixed magnetic layer on a substrate, on the laminated film, A first lift-off comprising: a pair of notches provided on both sides sandwiching the contact surface; and a pair of cuts provided between the contact surface and the both sides and on both sides in the track width direction of the contact surface. Forming a resist, further irradiating the laminated film with etching particles to etch all or a part of the laminated film on the outer side in the track width direction from both side surfaces of the first lift-off resist, thereby obtaining a substantially trapezoidal cross-sectional view a stack forming step of forming a laminate having both sides of the track width direction outside is, by depositing the sputtered particles from the direction of an angle theta _d1 with respect to the substrate, or side surfaces and the side surfaces of the laminate An insulating layer forming step of forming an insulating layer extending to the said laminate at the position corresponding to the cutout portion, the on an insulating layer on both sides the position of the laminate, the angle with respect to the substrate theta _d2 (However, θ
_d2 > _θd1 ) by depositing another sputtered particle from the direction, a bias layer forming step of stacking at least a pair of hard bias layers located at the same level as the free magnetic layer, and removing the first lift-off resist After doing
A contact surface narrower than the contact surface of the first lift-off resist, both side surfaces sandwiching the narrow contact surface, and the narrow surface between the contact surface and the both side surfaces; A second resist forming step of forming a second lift-off resist comprising a pair of cut portions provided on both sides of the contact surface in the track width direction substantially at the center of the upper surface of the stacked body in the track width direction; A lead layer forming step of forming a pair of lead layers extending from above the insulating layer to above the laminate at a position corresponding to the cut portion of the second lift-off resist by depositing sputtered particles. With the features described above, the above-mentioned problem has been solved. According to the present invention, after the second lift-off resist is formed, another etching particle may be irradiated to etch a part of the laminate at a position corresponding to the cut portion of the second lift-off resist.
In the present invention, the angle θ _d1 is in the range of 40 to 80 °,
It is possible that the angle θ _d2 is in the range of 60 to 90 °. The present invention can include an insulating film forming step of stacking an insulating film on the hard bias layer by depositing another sputtered particle after stacking the hard bias layer. In addition, the method of manufacturing a spin-valve thin-film magnetic element of the present invention may include, after forming a laminated film including at least a free magnetic layer and a pinned magnetic layer on a substrate, contacting the laminated film on the laminated film. A first lift-off resist comprising a pair of notches provided between the contact surface and both side surfaces sandwiching the contact surface and the contact surface and both side surfaces in the track width direction of the contact surface. Is formed, and the laminated film is further irradiated with etching particles to etch all or a part of the laminated film on the outer side in the track width direction from both side surfaces of the first lift-off resist, thereby forming a substantially trapezoidal cross section. A laminate forming step of forming a laminate having both side surfaces on the outer side in the track width direction, and insulating forming an insulating layer extending on the side surface of the laminate by depositing sputter particles on both sides of the laminate. layer A bias layer forming step of stacking a pair of hard bias layers located at least on the same layer as the free magnetic layer on the insulating layer by depositing sputter particles on both sides of the laminate. After removing the lift-off resist, the contact surface of the first lift-off resist is narrower than the contact surface, both side surfaces sandwiching the narrow contact surface, and the contact surface and the both side surfaces. Forming a second lift-off resist substantially at the center of the upper surface of the stacked body, the second lift-off resist including a pair of cut portions provided between the narrow contact surfaces on both sides in the track width direction. An insulating film forming step of forming a pair of insulating films extending from above the hard bias layer to above the stacked body by depositing sputter particles from the direction of the angle θ _d3 with respect to the substrate; and To And depositing another sputtered particle from the direction of the angle θ _d4 (where θ _d3 > θ _d4 ), from the insulating film to the stacked body at the position corresponding to the cut portion of the second lift-off resist. The above problem was solved by comprising a lead layer forming step of forming a pair of extending lead layers. The present invention may employ means for irradiating another etching particle after forming the insulating film to etch a part of the laminate at a position corresponding to the cut portion of the second lift-off resist. . The present invention relates to the angle θ _d3
Is in the range of 60 to 90 °, and the angle θ _d4 is 40 to 8
It can be in the range of 0 °.

According to the present invention, by providing a pair of insulating layers located between the side surface of the laminate and the hard bias layer on both sides in the track width direction of the laminate, the side surface of the laminate is provided. Is insulated from the hard bias layer and the lead layer by the insulating layer, so that the shunt component of the detection current flowing directly to the side surface of the laminate is cut off by the insulation layer, and all the detection current is applied to the laminate from the overlay section. Accordingly, the magnetoresistive effect does not appear at both ends of the stacked body, and it is possible to prevent the side reading of the spin-valve thin-film magnetic element.

In the present invention, the thickness of the insulating layer on the side surface of the laminate is set in the range of 0.5 nm or more and 5 nm or less. When the side surface of the laminated body is insulated from the hard bias layer and the lead layer by the insulating layer, a pinhole is formed and conduction occurs, which is not preferable. If it is set, it is not preferable because the direction of the magnetic moment of the free magnetic layer may not be sufficiently aligned in a predetermined direction due to the bias magnetic field of the hard bias layer.

In the spin-valve thin-film magnetic element of the present invention, the insulating layer may be made of one of aluminum oxide, silicon oxide, tantalum oxide, titanium oxide, zirconium oxide, hafnium oxide, chromium oxide, vanadium oxide, and niobium oxide. It is preferable to consist of any one kind or a mixture of these two or more kinds (composite oxide). According to such a spin-valve thin-film magnetic element, the insulating film has the above-described material or film thickness, so that the shunt component of the detection current to both ends in the track width direction of the laminated body can be reliably blocked by the insulating film. Therefore, side reading of the spin-valve thin film magnetic element can be reliably prevented.

In the present invention, the insulating layer may extend to the substrate side of the hard bias layer, thereby preventing a detection current from flowing from the lead layer into the stacked body via the hard bias layer. Can be prevented.

Also, in the present invention, by providing a bias underlayer between the hard bias layer and the insulating layer, when the hard bias layer is formed on the bias underlayer, The coercive force and the squareness ratio are increased, and the bias magnetic field required for making the free magnetic layer a single magnetic domain can be increased.

According to the present invention, the insulating layer extends from the side surface of the laminate to both ends in the track width direction of the upper surface of the laminate, and overlay portions of the pair of lead layers are provided, respectively. The tip portion extends to the center side of the laminate from the insulating film and is joined to the laminate, so that only the tip portion of the overlay portion of the lead layer is joined to the laminate and the other portion of the lead layer Is insulated from the laminate and the hard bias layer by the insulating film, so that the shunt component of the detection current from the side surface of the laminate and the shunt component of the detection current from the upper surface to both ends in the track width direction are cut off by the insulating film. All of the detection current is applied to the multilayer body from the top end of the overlay portion, so that the magnetoresistive effect does not occur at both ends of the multilayer body, and the spin current is reduced. It is possible to prevent the side reading of lube thin film magnetic element.

In the present invention, when the thickness of the insulating layer on the upper surface of the laminate is in the range of 0.5 nm to 20 nm, the detection current from the upper surface of the laminate to both ends in the track width direction is reduced. The shunt component can be reliably blocked by the insulating film, and side reading of the spin-valve thin-film magnetic element can be reliably prevented.

In the lead layer according to the present invention, the width in the track width direction of each end portion of the lead layer, which is joined to the laminate, is 0.01 μm or more and 0.05 μm or less. Since a large bonding area is ensured, the contact resistance at the tip portion is reduced, and the detection current can be efficiently supplied to the laminate.

In the spin-valve thin-film magnetic element according to the present invention, it is preferable that the width of the overlay portion in the track width direction is in the range of 0.1 μm to 0.3 μm. Both end portions of the free magnetic layer, in which the direction of the magnetic moment is fixed, can be formed as insensitive regions that are substantially equal to the width of the overlay portion, and the reproduction sensitivity can be improved.

Further, in the spin-valve thin-film magnetic element of the present invention, the laminated body is formed by the free magnetic layer, the non-magnetic conductive layer, the fixed magnetic layer, and the magnetic field of the fixed magnetic layer by an exchange coupling magnetic field. It is preferable that the antiferromagnetic layer for fixing the moment direction is formed by laminating at least sequentially.

Further, in the spin-valve thin-film magnetic element according to the present invention, the laminated body may include a nonmagnetic conductive layer, the fixed magnetic layer, and an exchange coupling magnetic field on both sides in the thickness direction of the free magnetic layer. The pinned magnetic layer may be formed by at least sequentially laminating an antiferromagnetic layer that fixes the direction of the magnetic moment of the pinned magnetic layer.

Further, in the above-mentioned laminated body of the spin-valve type thin-film magnetic element, it is preferable that the free magnetic layer is a layer showing a so-called artificial ferrimagnet state (synthetic ferrimagnet). As a specific example of such a free magnetic layer, two or more ferromagnetic layers and a non-magnetic intermediate layer inserted between these ferromagnetic layers are laminated, and the magnetic moment of each adjacent ferromagnetic layer is formed. An example in which the directions are antiparallel to each other and the whole is in a ferrimagnetic state can be exemplified.

Further, in the above-mentioned laminated body of the spin-valve thin-film magnetic element, it is preferable that the fixed magnetic layer is a layer showing a so-called artificial ferrimagnet state (synthetic ferrimagnet). As a specific example of such a pinned magnetic layer, two or more ferromagnetic layers and a non-magnetic intermediate layer inserted between these ferromagnetic layers are laminated, and the magnetic moment of each adjacent ferromagnetic layer is formed. An example in which the directions are antiparallel to each other and the whole is in a ferrimagnetic state can be exemplified.

According to the present invention, an insulating film is provided between the hard bias layer and the lead layer so as to extend to both ends in the track width direction of the laminated body. Since the shunt component of the detection current flowing in can be regulated, the generation of the shunt component of the detection current flowing into the side surface of the stacked body can be further prevented. Here, the insulating layer and the insulating film may be integrated, and may be formed of the same material.

Next, a thin-film magnetic head according to the present invention is characterized in that the spin-valve thin-film magnetic element described above is provided as a read element for magnetically recorded information. A flying magnetic head according to the present invention is characterized in that the slider includes the thin-film magnetic head described above.

According to the thin-film magnetic head, since the spin-valve thin-film magnetic element described above is provided as a magnetic-recording-information reading element, the reproduction output of the magnetic-recording information is high, and the probability of occurrence of side reading is low. It becomes possible to configure a thin film magnetic head. According to such a floating magnetic head, since the above-mentioned thin-film magnetic head is provided, it is possible to configure a floating magnetic head having a high reproduction output of magnetic information and a low probability of occurrence of side reading.

Next, in the method of manufacturing a spin-valve thin film magnetic element according to the present invention, a first lift-off resist is formed on a substrate, and the substrate is further laminated by irradiating etching particles from the direction of an angle θ _d2 to the substrate. After the body is formed, sputtered particles are deposited from the direction of the angle θ _d1 (where θ _d2 > θ _d1 ) with respect to the substrate, so as to correspond to the cut portion from the side surface of the stacked body and from the side surface. Forming an insulating layer extending to a position above the stacked body, further forming another hard bias layer by depositing another sputtered particle from a direction substantially equal to the angle θ _d2, and forming a second lift-off resist. Since the lead layer is formed on the stacked body at the notch position, the insulating film extends to the side surface of the stacked body, the substrate side of the hard bias layer and both ends of the track width of the stacked body, and The spin-valve thin-film magnetic element can be manufactured in which the layer can be extended to the center of the upper surface of the stacked body in the track width direction with respect to the insulating film and bonded to the stacked body, and side reading can be prevented.

In the method of manufacturing a spin-valve thin-film magnetic element according to the present invention, the second lift-off resist is formed and then irradiated with another etching particle to form the second lift-off resist.
By etching a part of the laminate at positions corresponding to both side portions and cut portions of the lift-off resist, the bonding surface between the lead layer and the laminate is cleaned, so that the lead layer is securely attached to the laminate. And the detection current can be efficiently applied to the laminate.

The present invention, the ranges of the angle theta _d1 is 40 to 80 °, by the angle theta _d2 is in the range of 60 to 90 °, the angle theta _d1 at the time of forming the insulating layer is in the above And the angle θ _d2 when forming the hard bias layer, the insulating layer can be formed up to the position of the cut portion of the first lift-off resist, and the shunt component of the detection current can be formed. Can be cut off as much as possible.

According to the present invention, the detection current from the lead layer to the hard bias layer is formed by stacking an insulating film on the hard bias layer by depositing another sputtered particle after stacking the hard bias layer. Can be further prevented.

Next, another manufacturing method of the spin-valve thin film magnetic element of the present invention is to form a laminated body and an insulating film and a hard bias layer on both sides thereof on a substrate, and then form a second lift-off resist, By depositing sputtered particles from the direction of the angle θ _d3 to form an insulating film extending to both sides and the side surfaces of the stacked body,
By depositing another sputtered particle from the direction of the angle θ _d4 (where θ _d3 > θ _d4 ) with respect to the substrate, the sputtered particle is located at a position corresponding to the cut portion of the second lift-off resist from above the hard bias layer. Since a pair of lead layers extending over the laminate are formed, the insulating film extends over both ends of the track width of the laminate, and the lead layer extends more toward the center of the laminate than the insulating film. It is possible to manufacture a spin-valve thin-film magnetic element that can be bonded to a laminate and that can prevent side reading. Here, the insulating layer and the insulating film may be integrated, and may be formed of the same material.

According to the present invention, when the angle θ _d3 is in the range of 60 to 90 ° and the angle θ _d4 is in the range of 40 to 80 °, the angle θ _d4 when forming the lead layer is as described above. Range, and is set smaller than the angle θ _d3 when the insulating film is formed, so that the lead layer can be formed up to the position of the cut portion of the second lift-off resist, and the shunt component of the detection current can be reduced. It becomes possible to cut off as much as possible.
Here, the insulating layer and the insulating film may be integrated, and may be formed of the same material.

[0043]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 18, the Z direction in the drawing is the moving direction of the magnetic recording medium, the Y direction in the drawing is the direction of the leakage magnetic field from the magnetic recording medium, and the X1 direction in the drawing is the track of the spin-valve thin film magnetic element. The width direction.

[First Embodiment] FIG. 1 shows a first embodiment of the present invention.
1 is a schematic cross-sectional view of a spin-valve thin-film magnetic element 1 according to an embodiment of the present invention as viewed from a magnetic recording medium side. FIG. 2 shows a floating magnetic head 350 provided with a thin-film magnetic head 300 including the spin-valve thin-film magnetic element 1, and FIG. 3 shows a cross-sectional view of a main part of the thin-film magnetic head 300.

A flying magnetic head 350 according to the present invention shown in FIG.
Thin film magnetic head 300 according to the present invention provided in 51d
Is mainly composed. Reference numeral 355 is the slider 3
Numeral 51 indicates a leading side which is an upstream side in the moving direction of the magnetic recording medium, and reference numeral 356 indicates a trailing side. A rail 35 is provided on the medium facing surface 352 of the slider 351.
1a, 351a, and 351b are formed, and air grooves 351c and 351c are formed between the rails.

As shown in FIG. 3, the thin-film magnetic head 300 according to the present invention is laminated on the insulating layer 362 formed on the end surface 351d of the slider 351.
62, a lower insulating layer 364 stacked on the lower shield layer 363, and a spin valve type according to the present invention formed on the lower insulating layer 364 and exposed on the medium facing surface 352. A thin-film magnetic element 1, an upper insulating layer 366 covering the spin-valve thin-film magnetic element 1,
And an upper shield layer 367 covering the upper insulating layer 366. The upper shield layer 367 is also used as a lower core layer of the inductive head h described later.

The inductive head h includes a lower core layer (upper shield layer) 367, a gap layer 374 laminated on the lower core layer 367, a coil 376, and a coil 3.
The upper core layer 378 is joined to the gap layer 374 and joined to the lower core layer 367 on the coil 376 side. The coil 376 is patterned so as to be spiral in a plane. In addition, the base end 378b of the upper core layer 378 is magnetically connected to the lower core layer 367 at a substantially central portion of the coil 376. In addition, the upper core layer 378 includes
A core protection layer 379 made of alumina or the like is laminated.

As shown in FIG. 1, the spin-valve thin-film magnetic element 1 of the present embodiment has a free magnetic layer, a non-magnetic conductive layer, a fixed magnetic layer, and an antiferromagnetic layer laminated one by one. This is a bottom-type single spin-valve thin-film magnetic element in which a magnetic layer is disposed on the lower insulating layer 364 side.

In the spin-valve thin-film magnetic element 1 of this embodiment, a lower layer 3 made of Ta or the like, an antiferromagnetic layer 4, a fixed magnetic layer 5, and a non-magnetic layer made of Cu or the like are formed on a lower insulating layer 364 (substrate). A laminated body 9 formed by sequentially laminating a magnetic conductive layer 6, a free magnetic layer 7, and a protective layer 8 made of Ta or the like.
And a pair of hard bias layers 32, 32 made of a CoPt alloy or the like formed on both sides of the laminated body 9 and aligning the magnetic moment direction of the free magnetic layer 7, and formed on at least the hard bias layers 32, 32 and detected. Cr, Ta, W, Au, R for applying a current (sense current) to the laminate 9
It is mainly composed of a pair of lead layers 34, 34 made of h, Cu or the like.

The free magnetic layer 7 includes a first ferromagnetic free layer 7a
, A first nonmagnetic intermediate layer 7b and a second ferromagnetic free layer 7c. The thickness of the second ferromagnetic free layer 7c is smaller than the thickness of the first ferromagnetic free layer 7a. The magnetic moment direction of the first ferromagnetic free layer 7a is aligned in the X1 direction in the figure by the bias magnetic field of the hard bias layers 32,32. The second ferromagnetic free layer 7c
Are connected to the first ferromagnetic free layer 7 via the first non-magnetic intermediate layer 7b.
a is antiferromagnetically coupled, and its magnetic moment direction is aligned in the direction opposite to the X1 direction in the figure.

As described above, the first and second ferromagnetic free layers 7a,
Since the directions of the magnetic moments of the layers 7c are antiparallel to each other, the magnetic moments of the respective layers are in a mutually canceling relationship. However, the first ferromagnetic free layer 7a is formed thicker than the second ferromagnetic free layer 7c. As a result, the magnetic moment of the first ferromagnetic free layer 7a slightly remains.
Aligned to the direction. The thickness of the first ferromagnetic free layer 7a may be smaller than the thickness of the second ferromagnetic free layer 7c,
In this case, the direction of the magnetic moment of the entire free magnetic layer 7 coincides with the direction of the magnetic moment of the first ferromagnetic free layer 7c.

The first and second ferromagnetic free layers 7a and 7c are
It is formed of a NiFe alloy, Co, CoNiFe alloy, CoFe alloy, CoNi alloy, or the like, and is particularly preferably formed of a NiFe alloy. Further, the first and second ferromagnetic free layers 7a and 7c are preferably formed of the same material. Further, the first non-magnetic intermediate layer 7b is composed of R
It is preferably made of one of u, Rh, Ir, Cr, Re, and Cu or an alloy thereof, and particularly preferably made of Ru. The thickness of the first ferromagnetic free layer 7a is preferably in the range of 3 to 6 nm.
The thickness of c is preferably in the range of 0.5 to 4 nm, and the thickness of the first nonmagnetic intermediate layer 7b is preferably in the range of 0.7 to 0.9 nm.

In the free magnetic layer 7, the first and second ferromagnetic free layers 7a and 7c are antiferromagnetically coupled, and the magnetic moment of the first ferromagnetic free layer 7a remains. The layer shows a ferrimagnetic state (synthetic ferrimagnet). As a result, the direction of the magnetic moment of the free magnetic layer 7 easily fluctuates even with a small change in the external magnetic field, and the reproduction sensitivity of the spin-valve thin-film magnetic element 1 can be increased.

The fixed magnetic layer 5 includes a first ferromagnetic pinned layer 5a.
, A second nonmagnetic intermediate layer 5b, and a second ferromagnetic pinned layer 5c.
Are laminated. Second ferromagnetic pinned layer 5
The thickness of c is larger than the thickness of the first ferromagnetic pinned layer 5a. The direction of the magnetic moment of the first ferromagnetic pinned layer 5a is fixed in the illustrated Y direction by the exchange coupling magnetic field with the antiferromagnetic layer 4, and the second ferromagnetic pinned layer 5c is interposed via the second nonmagnetic intermediate layer 5b. As a result, the pinned layer is antiferromagnetically coupled to the first ferromagnetic pinned layer 5a, and its magnetic moment direction is fixed in the direction opposite to the Y direction in the figure.

As described above, the first and second ferromagnetic pinned layers 5
Since the directions of the magnetic moments a and 5c are antiparallel to each other, the magnetic moments of the respective layers are in a relationship of canceling each other, but the second ferromagnetic pinned layer 5c is
Since it is formed thicker than the ferromagnetic pinned layer 5a, the magnetic moment of the second ferromagnetic pinned layer 5c slightly remains, so that the direction of the magnetic moment of the entire fixed magnetic layer 5 is fixed in the direction opposite to the Y direction in the figure. Is done. The thickness of the second ferromagnetic pinned layer 5c may be smaller than the thickness of the first ferromagnetic pinned layer 5a. In this case, the direction of the magnetic moment of the entire fixed magnetic layer 5 is changed to the first ferromagnetic pinned layer 5a. In the direction of the magnetic moment.

The first and second ferromagnetic pinned layers 5a, 5c
Are NiFe alloy, Co, CoNiFe alloy, CoFe
It is formed of an alloy, a CoNi alloy, or the like, and is particularly preferably formed of Co. Furthermore, the first and second
It is preferable that the ferromagnetic pinned layers 5a and 5c are formed of the same material. The second non-magnetic intermediate layer 5b is made of Ru, R
It is preferably made of one of h, Ir, Cr, Re, and Cu or an alloy thereof, and particularly preferably made of Ru. The thickness of the first ferromagnetic pinned layer 5a is preferably in the range of 1 to 2.5 nm, the thickness of the second ferromagnetic pinned layer 5c is preferably in the range of 2 to 3 nm, and the thickness of the second nonmagnetic intermediate layer 5b. Is preferably in the range of 0.7 to 0.9 nm.

The pinned magnetic layer 5 includes first and second ferromagnetic pinned layers 5a and 5c which are antiferromagnetically coupled to each other, and
The magnetic moment of the ferromagnetic pinned layer 5c remains,
The layer shows an artificial ferrimagnetic state (synthetic ferrimagnet). This allows
The fixed magnetic layer 5 can be stabilized by firmly fixing the magnetic moment direction of the fixed magnetic layer 5. The direction of the magnetic moment of the free magnetic layer 7 and the direction of the magnetic moment of the fixed magnetic layer 5 intersect.

Each of the free magnetic layer 7 and the pinned magnetic layer 5 has two ferromagnetic layers (first and second ferromagnetic free layers 7).
a, 7c, the first and second ferromagnetic pinned layers 5a, 5c), but are not limited thereto, and may be composed of two or more ferromagnetic layers. In this case, a non-magnetic intermediate layer is inserted between these ferromagnetic layers, and the directions of the magnetic moments of the adjacent ferromagnetic layers are made antiparallel, and the whole is brought into a ferrimagnetic state. Is preferred.

The non-magnetic conductive layer 6 is a layer for reducing the magnetic coupling between the free magnetic layer 7 and the pinned magnetic layer 5 and for mainly supplying a detection current (sense current).
It is preferably formed of a nonmagnetic material having conductivity represented by Au, Ag, and the like, and particularly preferably formed of Cu. The thickness of the nonmagnetic conductive layer 6 is 2-3.
It is preferably in the range of nm.

The antiferromagnetic layer 4 is preferably made of a PtMn alloy. The PtMn alloy has excellent corrosion resistance, a high blocking temperature, and a large exchange coupling magnetic field as compared with a NiMn alloy, a FeMn alloy, or the like which has been conventionally used as an antiferromagnetic layer. The antiferromagnetic layer 4
Represents an XMn alloy or a PtX'Mn alloy (wherein, in the above composition formula, X represents one selected from Pt, Pd, Ir, Rh, Ru, and Os, and X 'represents Pd, Cr, R
u, Ni, Ir, Rh, Os, Au, Ag, Ne, A
r, Xe, or Kr).

In the PtMn alloy and the alloy represented by the formula XMn, Pt or X is desirably in the range of 37 to 63 atomic%. More preferably, 4
It is in the range of 4-57 atomic%. Furthermore, PtX'M
In the alloy represented by the formula n, X ′ + Pt is 37 to 6
It is desirable to be in the range of 3 atomic%. More preferably, it is in the range of 44 to 57 atomic%. The antiferromagnetic layer 4
Is preferably in the range of 8 to 20 nm.

By using an alloy having an appropriate composition range as described above as the antiferromagnetic layer 4 and subjecting it to a heat treatment in a magnetic field, the antiferromagnetic layer 4 generating a large exchange coupling magnetic field can be obtained. The direction of the magnetic moment of the fixed magnetic layer 5 can be firmly fixed by the coupling magnetic field. In particular, a PtMn alloy has an exchange coupling magnetic field exceeding 6.4 × 10 ⁴ A / m, and the blocking temperature at which the exchange coupling magnetic field is lost is 65.
The antiferromagnetic layer 4 as extremely high as 3 K (380 ° C.) can be obtained.

The antiferromagnetic layer 4 is formed so as to protrude from the fixed magnetic layer 5 and the free magnetic layer 7 on both sides in the X1 direction in the figure. The protruding portions 4a, 4a of the antiferromagnetic layer 4
The insulating layers 30, 30 and the hard bias layers 32, 3
2, and lead layers 34, 34 are sequentially laminated. Also, between the insulating layers 30, 30 located on the protrusions 4a, 4a of the antiferromagnetic layer 4 and the side surfaces 9b, 9b of the laminated body 9 and the hard bias layers 32, 32, are made of Ta, W or Cr. Bias underlayers 31, 31 are stacked. For example, a non-magnetic metal having a body-centered cubic structure (bcc
When the hard bias layers 32, 32 are formed on the bias underlayers 31, 31 made of Cr, the coercive force and the squareness of the hard bias layers 32, 32 increase, and the free magnetic layer 7 becomes a single magnetic domain. The required bias magnetic field can be increased.

The hard bias layers 32 are made of, for example, Co.
Pt consists (cobalt platinum) alloy, illustrated X ₁ direction on both sides of the stack 9, i.e. is provided on both sides in the track width direction. In particular, by disposing the hard bias layers 32 and 32 on both sides of the free magnetic layer 7 in the X1 direction in the drawing, a bias magnetic field is efficiently applied to the free magnetic layer 7 so that the magnetic moment directions of the free magnetic layer 7 are aligned, and Barkhausen noise is reduced. Can be reduced.

The side surfaces 9 b and 9 of the laminated body 9 in the track width direction
b, insulating layers 30, 30 are formed, and the insulating layers 30, 30 are formed on both sides of the laminated body 9 from below the hard bias layers 33, 33, on the side surfaces 9 b, 9 b,
And both end portions 9a, 9a of the laminate 9 in the illustrated X1 direction.
It is formed to extend up. The both ends of the laminate 9 in the X1 direction in the drawing are the hard bias layers 3 of the laminate 9.
2 and 32. Further, insulating films 33, 33 are formed on the hard bias layers 32, 32. The insulating films 33, 33 are formed on the hard bias layer 33,
The upper layer 33 is connected to the insulating layers 30 on the side of the laminated body 33.

The insulating layers 30, 30 and the insulating films 33, 33
Is aluminum oxide, silicon oxide, tantalum oxide,
It is preferably made of any one of titanium oxide, zirconium oxide, hafnium oxide, chromium oxide, vanadium oxide, and niobium oxide or a mixture (complex oxide) of two or more thereof, and has a thickness of 0.5 nm or more. 20n
m or less. Insulating layers 30, 30
If the film thickness is less than 0.5 nm at the side surfaces 9b, 9b of the laminated body 9, pinholes are formed in the insulating films 33, 33, and the insulation between the hard bias layers 32, 32 and the laminated body 9 is formed. Is not preferable because the thickness of the hard bias layer 3 may be incomplete.
Due to the bias magnetic fields of 2, 32, the direction of the magnetic moment of the free magnetic layer 7 may not be sufficiently aligned with the above-mentioned direction, and the spin-valve thin-film magnetic element 1 itself may be reduced due to an increase in the film thickness. It is not preferable because the thickness is increased and the gap width is increased. Insulating film 3
The insulating films 3 and 33 have a thickness of less than 0.5 nm.
If the film thickness exceeds 20 nm, the spin-valve thin-film magnetic element 1 itself becomes thick and the gap width increases, which is not preferable.

Next, the pair of lead layers 34, 34 are formed on the hard bias layers 32, 32 via the insulating films 33, 33, and further extend to the center of the stacked body 9 beyond the insulating layers 30, 30. are doing. That is, the lead layers 34, 34 have an overlay portion 34 a extending over a part of the laminate 9,
34a are provided respectively, and the overlay portion 34a
a, 34a are insulating layers 30, 3
0, and extends to the center side of the laminated body 9.
4b and 34b are joined to the laminated body 9. The lead layers 34, 34 are arranged at an interval of Tw in the X1 direction in the figure. This interval Tw becomes the optical track width of the spin-valve thin-film magnetic element 1. The width of the overlay portions 34a, 34a in the track width direction is shown in FIG.
At 0.1 μm to 0.3 μm.
The range of not more than μm is preferred. Overlay portions 34a, 3
By setting the width W1 of 4a within the above range, a sense current does not flow to both ends of the free magnetic layer in which the direction of the magnetic moment is fixed by the bias magnetic field, and the track width of the spin-valve thin-film magnetic element 1 is reduced. And the sensitivity can be improved.

The lead layers 34, 34 have a tip portion 34b,
Only 34b is joined to the laminate 9 and the tip portions 34b, 34
Portions other than b are insulated from the stacked body 9 by the insulating layers 30 and 30 and are insulated from the hard bias layers 32 by the insulating films 33 and 33. Therefore, the sense current applied to the laminate 9 from the lead layers 34, 34 is applied to the laminate 9 only from the tip portions 34b, 34b of the lead layers 34, 34 as shown by the arrow J in FIG.
No voltage is applied to the laminate 9 from the side surfaces 9b, 9b of the laminate 9.

The leading end portions 34 of the lead layers 34, 34
It is preferable that the width W2 of the b and 34b in the X1 direction is in the range of 0.01 μm to 0.05 μm. When the widths of the tip portions 34b, 34b are within the above range, a large bonding area between the lead layers 34, 34 and the laminate 9 is ensured, so that the contact resistance at the tip portions 34b, 34b is reduced, and A sense current can be efficiently provided.

On the other hand, between the lead layers 34, 34 and the hard bias layers 32, 32 are insulated by insulating films 33, 33, and further, between the hard bias layers 32, 32 and the side surfaces 9b, 9b of the laminated body 9. Is insulated by the insulating layers 30, 30, so that the sense current does not flow into the side surfaces 9 b, 9 b of the stacked body 9 via the hard bias layers 32, 32.
Furthermore, since the insulating layers 30, 30 extend between the overlay portions 34a, 34a and both end portions 9a, 9a of the laminated body 9, the sense current is reduced by the overlay portions 34a, 34a.
Does not flow toward both end portions 9a, 9a of the laminated body 9 from above.

Therefore, the most concentrated sense current in the laminated body 9 is the central portion where the lead layers 34 and 34 are not formed, and the magnetic resistance (M
R) The effect becomes remarkable, and the detection sensitivity of the leakage magnetic field of the magnetic recording medium increases. Therefore, this central portion is referred to as a sensitivity region S as shown in FIG.

On the other hand, in the portions of the laminate 9 where the leading end portions 34b, 34b of the lead layer and the insulating layers 30, 30 are attached (both end portions 9a, 9a), the sense current is reduced and the magnetoresistance is reduced. The (MR) effect is substantially reduced, and the detection sensitivity of the leakage magnetic field of the magnetic recording medium is reduced. At both end portions 9a of the laminated body 9, the direction of the magnetic moment of the free magnetic layer 7 is
Since it is strongly fixed by the bias magnetic fields 2 and 32, the magnetoresistance effect is hardly developed. Further, no sense current flows at both ends 9a, 9a due to the presence of the insulating layers 30, 30, so that the magnetoresistive effect does not substantially appear, and the detection sensitivity of the leakage magnetic field of the magnetic recording medium becomes zero. From the above, the leading end portion 34 of the lead layer
The portions (both end portions 9a, 9a) where b, 34b and the insulating layers 30, 30 are applied can be referred to as insensitive regions N as shown in FIG.

As described above, only the leading end portions 34b, 34b of the lead layers 34, 34 are joined to the laminated body 9, and the other parts of the lead layers 34, 34 are insulated by the insulating layers 30, 30. Side surfaces 9b, 9b of insulating layers 30, 30
By insulating the magnetic recording medium, a portion that substantially contributes to the reproduction of the recording magnetic field from the magnetic recording medium (the sensitivity region S) and a portion that does not substantially contribute to the reproduction of the recording magnetic field from the magnetic recording medium (the insensitive region N) ) Is formed, and the width Tw of the sensitive region S becomes the track width of the spin-valve thin-film magnetic element 1, and it is possible to cope with a narrow track. Further, the sense current can be concentrated on the sensitivity region S of the multilayer body 9, the resistance change rate in the sensitivity region S is improved, and the output characteristics of the spin-valve thin-film magnetic element 1 can be improved. In particular, the laminate 9
In the both end portions 9a, 9a, the sense current is cut off by the insulating layers 30, 30 and the detection sensitivity becomes 0 without manifesting the magnetoresistive effect. it can.

Next, a method for manufacturing the spin-valve thin-film magnetic element 1 will be described with reference to the drawings. This manufacturing method includes a laminate forming step of forming a substantially trapezoidal laminate in cross section on a substrate, a bias layer forming step of laminating a hard bias layer, an insulating film forming step, a second resist forming step, It comprises an etching step and a lead layer forming step.

First, in the laminated body forming step, as shown in FIG. 4, a lower layer 3, an antiferromagnetic layer 4, a first ferromagnetic pinned layer 5a, and a first nonmagnetic intermediate layer are formed on a lower insulating layer 364 (substrate). Layer 5
b, the second ferromagnetic pinned layer 5c, the nonmagnetic conductive layer 6, the first ferromagnetic free layer 7a, the second nonmagnetic intermediate layer 7b, the second ferromagnetic free layer 7c, and the protective layer 8 are sequentially laminated. 9c is formed. Next, annealing in a magnetic field or the like is performed to form the antiferromagnetic layer 4.
Then, an exchange coupling magnetic field is generated in the fixed magnetic layer 5 to fix the magnetization direction of the fixed magnetic layer 5. Next, the first film is formed on the laminated film 9c.
A lift-off resist L1 is formed. The first lift-off resist L1 has a contact surface 51 in contact with the laminated film 9c and both side surfaces 52, 52 sandwiching the contact surface 51. The contact surface 51 and both side surfaces 52, 52 are provided. And a pair of notches 5 on both sides of the contact surface 51 in the track width direction.
3 and 53 are provided.

Next, as shown in FIG. 5, the lower insulating layer 3
64 (substrate) from the direction of the angle θ _d2 with respect to the in-plane direction,
The laminated film 9c is irradiated with etching particles composed of an ion beam of an inert gas element such as Ar and the like, and the laminated film located outside the both side surfaces 52, 52 of the first lift-off resist L1 in the X1 direction (outside in the track width direction). 9c is etched partway through the antiferromagnetic layer 4. In this way, the laminate 9 having the substantially trapezoidal cross section and the side surfaces 9b, 9b is formed. The steps so far correspond to a laminate forming step. The antiferromagnetic layer 4 of the laminated body 9 remains partially due to being etched partway through the layer, and the antiferromagnetic layer 4 shown in FIG.
It has an extension 4a, 4a extending to both sides in the direction.

The irradiation of the etching particles is performed by ion milling with Ar or reactive ion etching (RI
It is preferable to carry out according to E) and the like. These methods are excellent in the straightness of the etching particles, and can irradiate the etching particles from a specific direction. The angle θ _d2 for determining the irradiation direction of the etching particles is preferably in the range of 60 to 90 °. The angle θ _d2 can be defined, for example, by adjusting the angle between the grid of the ion gun and the lower insulating layer 364.

As described above, by irradiating the etching particles from the angle θ _d2 , the anisotropic etching can be performed on the laminated film 9 c, and the anisotropic etching can be performed on both sides 52, 52 of the first lift-off resist L 1. By etching a certain laminated film 9a, a laminated body 9 having substantially trapezoidal side surfaces 9b, 9b can be formed.

Next, in the insulating layer forming step, as shown in FIG. 6, the angle θ _d1 (where θ _d2 > θ) is formed with respect to the lower insulating layer 364 (substrate) by using an ion beam sputtering method or the like.
_The insulating layers 30, 30 are formed by depositing sputter particles from the direction of _d1 ). At this time, the sputtered particles are deposited on the extended portions 4a, 4a of the antiferromagnetic layer 4 without the first lift-off resist L1 and on both side surfaces 9b, 9b of the laminated body 9.
The insulating layer 3 is deposited on the insulating layer 3 while entering the cut portions 53 of the first lift-off resist L1.
0, 30 are provided on the extended portions 4a, 4a of the antiferromagnetic layer 4 and on both side surfaces 9b, 9b of the laminated body 9;
It is formed to extend over both end portions of the laminated body 9 at positions corresponding to 53. When the sputter particles are deposited, the sputter particles also deposit on the first lift-off resist L1 to form a layer 30 'having the same composition as the insulating layer 30.

Here, it is preferable that the angle θ _d1 is in the range of 40 to 80 °. Preferably, the angle θ _d1 is smaller than the angle θ _d2 , that is, the angle θ _d1 is more acute than the angle θ _d2 with respect to the surface of the lower insulating layer 364. The angle θ _d1 is
For example, the surface of the sputtering target and the lower insulating layer 36
The angle can be defined by adjusting the angle between the first and fourth positions. By depositing the sputtered particles from the direction of the angle θ _d1 as described above, the sputtered particles enter the cut portions 53, 53, and thereby the insulating layers 30, 30 extend from the extending portions 4a, 4a of the antiferromagnetic layer 4. 4a and side surfaces 9b, 9 of the laminate 9
b to extend to both end portions 9a, 9a of the laminated body 9 from above.

Next, in the bias layer forming step, FIG.
As shown in FIG. 7, another sputtered particle is deposited on both sides of the stacked body 9 from the direction of the angle θ _d2 with respect to the lower insulating layer 364 (substrate) by using an ion beam sputtering method or the like, so that the bias underlayer 31 is formed. And the hard bias layer 32 are laminated. Here, the angle θ _d2 is preferably in the range of 60 to 90 °, and can be set to a range substantially equal to the etching angle in the stacked body forming step. here,
The bias underlayer 31 and the hard bias layer 32 are formed by extending portions 4 a, 4 a of the antiferromagnetic layer 4 extending on both sides of the stacked body 9.
It is laminated on the insulating layers 30, 30 located on the upper side and on the side surfaces 9b, 9b of the laminated body 9. The hard bias layer 3
It is preferable that the layers 2 and 32 are stacked at least up to the same layer position as the free magnetic layer 7. When another sputtered particle is deposited, the sputtered particle is also deposited on the first lift-off resist L1, and the layers 31 'and 32' having the same composition as the bias underlayer 31 and the hard bias layer 32 are formed on the layer 30 '.
Is formed.

Further, in the insulating film forming step, as shown in FIG. 7, sputtered particles are deposited on the hard bias layers 32 and 32 from the direction of the angle θ _{d2 with} respect to the lower insulating layer 364 (substrate) to form the insulating layers 30 and 32. Insulating films 33, 33 having the same composition as 30;
To form When the sputtered particles are deposited, the sputtered particles are also deposited on the first lift-off resist L1, and the insulating film 3
A layer 33 'having the same composition as that of No. 3 is formed. The deposition of the sputtered particles is preferably performed by an ion beam sputtering method or the like in the same manner as described above. At this time, the sputtering angle θ _d2 is preferably in the range of 60 to 90 °, It can be set in substantially the same range.

Here, in the insulating film forming step, it is also possible to deposit sputtered particles from the direction of the sputter angle θ _d1 . In this case, both end portions 9a, 9a
The insulating films 33, 33 are laminated on the insulating layers 30, 30 located at the position (1).

Next, in the second resist forming step, as shown in FIG. 8, after removing the first lift-off resist L1, a second lift-off resist L2 is formed substantially at the center of the upper surface of the laminated body 9. The second foot-off resist L2 has a contact surface 57 in contact with the laminated body 9 and both side surfaces 58, 58 sandwiching the contact surface 57.
7 and the contact surfaces 57 between the side surfaces 58, 58.
A pair of cut portions 59, 59 are provided on both sides in one direction. The width of the contact surface 57 in the illustrated X1 direction is smaller than the width of the contact surface 54 of the first lift-off resist L1. By forming the second lift-off resist L2 in this manner, a part of the protective layer 8 (laminated body 9) at a position corresponding to the cuts 59, 59 is exposed. In the exposed portions 9d, 9d, portions covered with the first lift-off resist in the insulating film forming step are exposed by forming the narrow second lift-off resist L2.

The width of the exposed portions 9d, 9d in the illustrated X1 direction is the same as that of the contact surface 51 of the first lift-off resist L1.
It is defined by a dimensional difference between the width in the one direction and the width in the illustrated X1 direction of the contact surface 57 of the second lift-off resist L2. The width of the exposed portions 9d, 9d corresponds to the width W2 of the tip portion 34b of the lead layer 34 in FIG. Therefore, the width of the exposed portions 9d, 9d can be precisely controlled by the size of the first and second lift-off resists L1, L2, and the contact area of the lead layer 34 is controlled to efficiently supply the sense current to the stacked body 9. It can be configured to be able to apply.

Next, in the etching step, as shown in FIG. 9, another etching particle is irradiated to expose the exposed portions 9d, 9d exposed in the previous step. At this time, the insulating films 33 are also etched at the same time, so that the film thickness is reduced. Various contaminants adhere to the exposed portions 9d and 9d when the first lift-off resist L1 is removed or the second lift-off resist L2 is formed in the second resist process, and the surfaces are contaminated. If the lead layer 34 is formed in a subsequent step in this state, the contact resistance between the lead layer 34 and the stacked body 9 may increase. Therefore, in this step, the exposed portions 9d, 9d are cleaned by etching.

Then, in the lead layer forming step, as shown in FIG. 10, other sputtered particles are deposited on the insulating films 33, 33 to form the lead layers 34, 34. At this time, other sputtered particles are cut into the cut portions 5 of the second lift-off resist L2.
9, 59, which leads to lead layers 34, 34.
Are located at positions corresponding to the cut portions 59, 59,
33 and the exposed portions 9d, 9d. When other sputtered particles are deposited, other sputtered particles are also deposited on the second lift-off resist L2, and a layer 34 'having the same composition as the lead layer 34 is formed.

The deposition of other sputtered particles is preferably performed by ion beam sputtering or the like as in the above case. It is preferable that the irradiation angle of the other sputtered particles is substantially the same as the irradiation angle of the sputtered particles in the etching step.

As described above, another sputtered particle is cut into the notch 5
By forming the lead layers 34, 34 up to the exposed portions 9d, the overlay portions 34a, 34a extending toward the center of the stacked body 9 can be formed. Top part 3 of overlay part
4b and 34b can be directly joined to the laminated body 9.

Lastly, the second lift-off resist L2 is removed, and the hard bias layers 32, 3
2 by generating a bias magnetic field to align the magnetic moment direction of the free magnetic layer 7 with the X1 direction in the drawing.
The spin-valve thin-film magnetic element 1 shown in FIG. 1 is obtained.

According to the method of manufacturing the spin-valve thin-film magnetic element 1 described above, the sputtered particles are deposited from the direction of the angle θ _d1 and the cut portions 53 of the first lift-off resist L1 are cut from the side surfaces 9b, 9b of the laminated body 9. , 53 are formed up to the positions corresponding to the notches 59, 59 of the second lift-off resist L2.
4 and 34, the insulating films 33 and 33 are
And the lead layers 34, 34 extend toward the center of the laminated body 9 more than the insulating layers 30, 30, and can be joined to the laminated body 9. It is possible to manufacture the spin-valve thin-film magnetic element 1 capable of preventing the side reading by preventing the shunt components of the detection current from flowing from the components 9b and 9b.

Next, another embodiment of the spin-valve thin-film magnetic element 1 will be described with reference to the drawings. In the configuration of this embodiment, as shown in FIG.
Is different from the above-described embodiment in that insulating films 33, 33 extend in place of the insulating layers 30, 30 at both end portions 9a, 9a. And the description is omitted. Here, the insulating layer 30,
Since the insulating films 33 and 33 are made of substantially the same material,
In the spin-valve thin-film magnetic element 1, the same effect as in the above embodiment can be obtained.

Further, the other manufacturing method is different from the manufacturing method in the previous embodiment in that a second lift-off resist is formed after forming a hard bias layer,
Another point is that an insulating film and a lead layer are formed. The other manufacturing method includes a laminate forming step, an insulating layer forming step,
It comprises a bias layer forming step, a second resist forming step, an insulating film forming step, an etching step, and a lead layer forming step.

First, in the laminated body forming step, the laminated layer 9c is formed by sequentially laminating the underlayer 3 and the protective layer 8 in the same manner as described with reference to FIG. An exchange coupling magnetic field is generated from the layer 4 to the fixed magnetic layer 5 to fix the magnetization direction of the fixed magnetic layer 5, and a first lift-off resist L1 is formed on the laminated film 9c. The first lift-off resist L1 has a contact surface 51 in contact with the laminated film 9c and both side surfaces 52, 52 sandwiching the contact surface 51. The contact surface 51 and both side surfaces 52, 52 are provided. A pair of cuts 53 is provided on both sides of the contact surface 51 in the track width direction.

Next, as shown in FIG. 12, similarly to FIG. 5, the lower insulating layer 364 (substrate) is irradiated with etching particles on the laminated film 9c, and the both side surfaces 52, 52 of the first lift-off resist L1 are exposed. The laminated film 9c located further outside in the X1 direction (outer side in the track width direction) than shown in FIG. At this time, the angle for determining the irradiation direction of the etching particles is preferably in the range of 60 to 90 °, which is equivalent to the angle θ _d2 . In this way, the laminated body 9 having a substantially trapezoidal cross section and side surfaces 9b, 9b is formed. In addition,
The antiferromagnetic layer 4 of the laminate 9 is partially etched by being etched halfway through the layer, and has extension portions 4a, 4a extending on both sides in the X1 direction on both sides of the laminate 9. are doing.

Next, as shown in FIG. 13, the insulating layer 30, the bias underlayer 31, and the hard bias layer 32 are laminated by depositing sputter particles on both sides of the laminate 9 in the same manner as in FIG. (Insulating Layer Forming Step, Bias Layer Forming Step) The insulating layer 30, the bias underlayer 31, and the hard bias layer 32 are formed of antiferromagnetic materials extending on the side surfaces 9 b, 9 b of the laminate 9 and both sides of the laminate 9. Extension 4 of layer 4
a, 4a. Further, the hard bias layer 32,
32 is preferably laminated at least to the same hierarchical position as the free magnetic layer 7. At this time, the angle for determining the irradiation direction of the sputtered particles is 60 to 90 °, which is equivalent to the angle θ _d2 .
Is preferably within the range. When the sputtered particles are deposited, the sputtered particles are also deposited on the first lift-off resist L1, and the layers 30'31 ', 3 having the same composition as the insulating layer 30, the bias underlayer 31, and the hard bias layer 32 are formed.
2 'forms.

Next, in the second resist forming step, as shown in FIG. 14, after removing the first lift-off resist L1, a second lift-off resist L12 is formed on the laminated body 9. The second lift-off resist L12 has a contact surface 60 in contact with the laminated body 9 and both side surfaces 61, 61 sandwiching the contact surface 60.
A pair of cut portions 62, 62 are provided between the contact surfaces 1 and 61 on both sides of the contact surface 60 in the X1 direction in the drawing. The width of the contact surface 60 in the illustrated X1 direction is the first lift-off resist L
1 is smaller than the width of the contact surface 51. The interval between both side surfaces 61, 61 is smaller than the interval between both side surfaces 52, 52 of the first lift-off resist L1. It is smaller than the dimensions.

Next, in the insulating film forming step, as shown in FIG. 15, another sputtered particle is deposited on the lower insulating layer 364 (substrate) from the direction of the angle θ _d3 , and both side surfaces of the second lift-off resist L12 are formed. Insulating films 33, 33 are formed on the outer sides in the X1 direction of FIG. The insulating films 33, 33 are formed on the laminated body 9 located outside the both side surfaces 61, 61 in the X1 direction in the figure.
Hard bias layers 32, 32 from both end portions 9a, 9a of
It is formed to extend upward. Another sputtered particle is the angle θ
_Since it is deposited from the direction of _d3 , it does not enter the cut portions 62 of the second lift-off resist L12. As a result, the insulating films 33, 33 are not formed on the exposed portions 9c, 9c of the laminate 9 located at positions corresponding to the cuts 62, 62. When another sputtered particle is deposited, another sputtered particle is also deposited on the second lift-off resist L12, and a layer 33 'having the same composition as the insulating film 33 is formed.

It is preferable that another sputtered particle is deposited by an ion beam sputtering method or the like as in the above case. Further, the angle θ _d3 is preferably in the range of 60 to 90 °. If the angle θ _d3 is less than 60 °, the sputtered particles may cause the cut portions 62, 6 of the second lift-off resist L12.
Will penetrate into 2, after it is not preferable because it becomes impossible to bond the lead layer to the laminate in step, the angle theta _d3 exceeds 90 °, both sides of the position of the end portion of the insulating film 33, 33 It is not preferable because it cannot be adjusted to the positions of 61 and 61. The angle θ _d3 can be defined, for example, by adjusting the angle between the surface of the sputtering target and the lower insulating layer 364.

By depositing another sputtered particle from the direction of the angle θ _d3 in this manner, the cut portions 62, 62
A part of the laminated body 9 at the position corresponding to (the exposed part 9d,
9d), the insulating film 3 is formed without forming the insulating film 33.
The laminated bodies 9 and 33 are placed on the hard bias layers 32 and 32 from above.
Can be formed to extend to both end portions 9a, 9a.

Next, in the etching step, as shown in FIG. 16, another etching particle is irradiated from the direction of the angle θ _d4 (θ _d3 > θ _d4 ), and this etching particle is cut into the cut portions 62 and 6.
2, the exposed portion 9 of the laminate 9
d, 9d are etched. At this time, the insulating films 33, 3
3 is also etched at the same time, and the film thickness is reduced. Various contaminants adhere to the exposed portions 9d and 9d when the first lift-off resist L1 is removed or the second lift-off resist L12 is formed in the second resist process, and the surfaces are contaminated. In this state, the lead layer 34 will be formed in a later process.
Is formed, the contact resistance between the lead layer 34 and the laminate 9 may increase.
d is etched and cleaned.

The angle θ _d44 is preferably in the range of 40 to 80 °. Preferably, the angle θ _d4 is smaller than the angle θ _d3 , that is, the angle θ _d4 is more acute than the angle θ _d3 with respect to the surface of the lower insulating layer 364. The angle θ _d4 can be defined, for example, by adjusting the angle between the grid of the ion gun and the lower insulating layer 364. By setting the angle θ _d4 within the above range and smaller than the angle θ _d3 , the etching particles can enter the cut portions 62, 62, and the exposed portions 9 d, 9
d can be etched.

If the angle θ _d4 is less than 40 °, the second lift-off resist L12 itself is excessively etched, and the dimensions of the lead layer may be deviated when the lead layer is formed later. If θ _d4 exceeds 80 °, the etching particles cannot enter the cut portions 62, 62, and the exposed portions 9d,
It is not preferable because 9d may not be completely etched.

Then, in the lead layer forming step, FIG.
As shown in FIG. 19, other sputtered particles are deposited on the insulating films 33, 33 from the direction of the angle θ _d4 with respect to the lower insulating layer 364 to form the lead layers 34, 34. At this time, other sputtered particles are cut into the cut portions 62, 6 of the second lift-off resist L12.
2, whereby the lead layers 34, 34 are exposed 9d, 9d at positions corresponding to the cuts 62, 62.
It is formed to extend up. When other sputtered particles are deposited, the sputtered particles are also deposited on the second lift-off resist L12, and a layer 3 having the same composition as the lead layer 34 is formed.
4 'forms.

The deposition of other sputtered particles is preferably performed by an ion beam sputtering method or the like as in the above case. Further, the irradiation angle θ _d4 of other sputtered particles is
Since the sputtered particles need to enter the cut portions 62, 62 of the second lift-off resist L12, it is preferable that the irradiation angle θ _d4 of the etching particles in the etching step be the same.

As described above, another sputtered particle is cut into the cut portion 6.
2, 62, and by forming the lead layers 34, 34 up to the exposed portions 9c, 9c, overlay portions 34a, 34a extending toward the center of the laminate 9 can be formed. Tip part 34
b and 34b can be directly joined to the laminate 9.

Finally, the second lift-off resist L12 is removed, and the hard bias layers 32, 32
By generating a bias magnetic field to align the magnetic moment direction of the free magnetic layer 7 with the X1 direction in the figure, the spin-valve thin-film magnetic element 1 shown in FIG. 11 is obtained.

According to the method of manufacturing the spin-valve thin-film magnetic element 1 described above, the insulating layer 3 is formed on the side surfaces 9 b and 9 b of the multilayer body 9.
After the formation of 0,30, sputter particles are deposited from the direction of the angle θ _d3 to form insulating films 33, 33 outside the both side surfaces 61, 61 of the second lift-off resist L1 in the X1 direction in the figure, and further, the angle θ _d4 The lead layers 34, 34 are formed to the positions corresponding to the cuts 62, 62 of the second lift-off resist L12 by depositing sputter particles from the direction of
The insulating films 33, 33 are formed at both ends 9a of the track width of the laminated body 9,
9a, and joined to the insulating layers 30, 30, and the lead layers 34, 34 can be extended to the center of the laminated body 9 more than the insulating films 33, 33 and joined to the laminated body 9, A spin-valve thin-film magnetic element 1 capable of preventing side reading can be manufactured.

[Second Embodiment] Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 18 shows a spin-valve thin-film magnetic element 1 according to a second embodiment of the present invention.
FIG. 1 shows a schematic cross-sectional view of the magnetic recording medium 01 as viewed from the magnetic recording medium.

The spin-valve thin-film magnetic element 101 shown in FIG. 18 constitutes a thin-film magnetic head in the same manner as the spin-valve thin-film magnetic element 1 of the first embodiment. Construct the head.

This spin-valve thin-film magnetic element 101
Are the first and second layers on both sides of the free magnetic layer 107 in the thickness direction.
Nonmagnetic conductive layers 106 and 108, first and second fixed magnetic layers 1
This is a dual spin-valve thin-film magnetic element in which layers 05 and 109 and first and second antiferromagnetic layers 104 and 110 are sequentially laminated.

That is, the spin-valve thin film magnetic element 10
Reference numeral 1 denotes a first antiferromagnetic layer 104, a first pinned magnetic layer 105, a first nonmagnetic conductive layer 106, a free magnetic layer 107, and a second nonmagnetic conductive layer on the underlayer 103 laminated on the lower insulating layer 364. The layer 108, the second pinned magnetic layer 109, the second antiferromagnetic layer 110, and the protective layer 111 are sequentially laminated. In this way, the layers from the base layer 103 to the protective layer 111 are sequentially laminated to form a laminate 112 having a substantially trapezoidal cross section. The spin-valve thin-film magnetic element 101 includes a pair of hard bias layers 132, 132 formed of CoPt alloy or the like that are formed on both sides of the stacked body 112 and align the magnetic moment direction of the free magnetic layer 107. , 132, Cr, Ta, Au, W, R
A pair of lead layers 134 made of h, Cu or the like is provided.

The spin valve thin film magnetic element 101 is different from the spin valve thin film magnetic element 1 of the first embodiment described above in that the laminated body 112 has a dual spin valve structure.

The free magnetic layer 107 includes a first diffusion prevention layer 107a made of Co or the like, a ferromagnetic free layer 107b made of a NiFe alloy, and a second diffusion prevention layer 10 made of Co or the like.
7c are laminated. The first and second diffusion preventing layers 107a and 107c prevent mutual diffusion between the ferromagnetic free layer 107b and the first and second nonmagnetic conductive layers 106 and 108. First, second diffusion barrier layer 107a, 107c has a thickness of preferably from 0.2 to 1 n m, a ferromagnetic free layer 1
The thickness of 07b is preferably in the range of 1 to 5 nm. The direction of the magnetic moment of the free magnetic layer 107 is aligned in the X1 direction by the bias magnetic field of the hard bias layers 132,132. Since the free magnetic layer 107 is made into a single magnetic domain, the spin-valve thin-film magnetic element 101 is formed.
Barkhausen noise can be reduced.

Next, the first and second antiferromagnetic layers 104 and 11
0 is for fixing the magnetic moment directions of the first and second pinned magnetic layers 105 and 109, and is made of a PtMn alloy which is the same material as the antiferromagnetic layer 4 of the first embodiment. Is preferred. Further, similarly to the antiferromagnetic layer 4 of the first embodiment, the first and second antiferromagnetic layers 104 and 110 are made of an XMn alloy or a PtX′Mn alloy (where X is Pt, Pd , Ir, Rh, Ru, Os
And X ′ represents Pd, Cr,
Ru, Ni, Ir, Rh, Os, Au, Ag, Ne, A
r, Xe, or Kr). Pt
The composition, film thickness, and the like of the Mn alloy, XMn alloy, and PtX'Mn alloy are almost the same as those of the antiferromagnetic layer 4 of the first embodiment.

However, in particular, the thickness of the second antiferromagnetic layer 110 is preferably 12 nm or less, and more preferably 8 nm or more.
More preferably, it is not more than nm. By making the thickness of the second antiferromagnetic layer 110 having a relatively high specific resistance relatively thin, that is, 12 nm or less, the sense current applied by the lead layers 134 and 134 can efficiently flow through the stacked body 112. . By setting the thickness of the second antiferromagnetic layer 110 to 8 nm or more, the exchange coupling magnetic field for fixing the direction of the magnetic moment of the second fixed magnetic layer 109 can be sufficiently increased. Can be firmly fixed.

The first and second antiferromagnetic layers 104 and 110 are made of an alloy having an appropriate composition range as described above, and are heat-treated in a magnetic field to generate a large exchange coupling magnetic field. Ferromagnetic layers 104 and 110 can be obtained,
Due to this exchange coupling magnetic field, the first and second fixed magnetic layers 10
The magnetic moment directions of 5, 109 can be firmly fixed.
In particular, in the case of a PtMn alloy, 6.4 × 10 ⁴ A / m
And the first and second antiferromagnetic layers 104 and 110 having an extremely high blocking temperature of 653 K (380 ° C.) at which the exchange coupling magnetic field is lost.

Next, the first pinned magnetic layer 105 includes the first ferromagnetic pinned layer 105a, the first non-magnetic intermediate layer 105b, and the second pinned magnetic layer 105b.
The ferromagnetic pinned layer 105c is laminated. The thickness of the second ferromagnetic pinned layer 105c is larger than the thickness of the first ferromagnetic pinned layer 105a. The magnetic moment direction of the first ferromagnetic pinned layer 105a is fixed in the illustrated Y direction by an exchange coupling magnetic field with the first antiferromagnetic layer 104, and the second ferromagnetic pinned layer 105c is connected to the first ferromagnetic pinned layer 105a. And its magnetic moment direction is fixed in the direction opposite to the Y direction in the figure.

As described above, the first and second ferromagnetic pinned layers 1
Since the directions of the magnetic moments of the layers 05a and 105c are antiparallel to each other, the magnetic moments of the respective layers cancel each other.
05c is formed thicker than the first ferromagnetic pinned layer 105a, so that the magnetic moment of the second ferromagnetic pinned layer 105c slightly remains.
5 is fixed in the direction opposite to the illustrated Y direction.

The second pinned magnetic layer 109 is formed by laminating a third pinned ferromagnetic layer 109a, a second nonmagnetic intermediate layer 109b, and a fourth pinned ferromagnetic layer 109c. 4th
The thickness of the ferromagnetic pinned layer 109c is larger than the thickness of the third ferromagnetic pinned layer 109a. The direction of the magnetic moment of the fourth ferromagnetic pinned layer 109c is the second antiferromagnetic layer 1
10, fixed in the illustrated Y direction by an exchange coupling magnetic field,
Further, the third ferromagnetic pinned layer 109a is antiferromagnetically coupled to the fourth ferromagnetic pinned layer 109c, and its magnetic moment direction is fixed in the direction opposite to the Y direction in the figure.

As in the case of the first pinned magnetic layer 105, the third and fourth pinned ferromagnetic layers 109a and 109c are
Although the respective magnetic moments of the first and second ferromagnetic layers cancel each other, since the fourth ferromagnetic pinned layer 109c is formed thicker than the third ferromagnetic pinned layer 109a, the magnetic moment of the fourth ferromagnetic pinned layer 109c is small. Remains in
The direction of the magnetic moment of the entire second pinned magnetic layer 109 is fixed in the Y direction in the figure.

Accordingly, the first and second pinned magnetic layers 105, 10
9 is the first to fourth ferromagnetic pinned layers 105a, 105c,
109a and 109c are antiferromagnetically coupled to each other, and the magnetic moments of the second and third ferromagnetic pinned layers 105c and 109a remain, respectively, so that an artificial ferrimagnetic state (synthetic ferrimagnet) is generated. Is obtained. Also, the direction of the magnetic moment of the free magnetic layer 107 and the first and second pinned magnetic layers 105, 10
9 intersect with the direction of the magnetic moment.

As shown in FIG. 18, the magnetic moment direction of the second ferromagnetic pinned layer 105c located near the free magnetic layer 107 among the ferromagnetic pinned layers forming the first pinned magnetic layer 105, 2. Since the direction of the magnetic moment of the third ferromagnetic pinned layer 109a located near the free magnetic layer 107 among the ferromagnetic pinned layers constituting the pinned magnetic layer 109 is the same, the free magnetic layer 107 and the first and second
The magnetoresistance effect developed between the fixed magnetic layers 105 and 109 does not cancel each other out, and a high magnetoresistance change rate can be exhibited.

The first to fourth ferromagnetic pinned layers 105a,
105c, 109a and 109c are NiFe alloy, C
o, a CoNiFe alloy, a CoFe alloy, a CoNi alloy, or the like, and particularly preferably a Co. Further, the first to fourth ferromagnetic pinned layers 105
Preferably, a, 105c, 109a, and 109c are formed of the same material. The first and second nonmagnetic intermediate layers 105b and 109b are made of Ru, Rh, Ir, Cr, R
It is preferable to be made of one of e and Cu or an alloy thereof, and it is particularly preferable to be formed of Ru. The thickness of the first and fourth ferromagnetic pinned layers 105a and 109c is preferably in the range of 1 to 3 nm, and the thickness of the second and third ferromagnetic pinned layers 105c and 109a is preferably in the range of 2 to 3 nm. Further, the first and second nonmagnetic intermediate layers 105b, 1b
The thickness of 09b is preferably in the range of 0.7 to 0.9 nm.

Note that the first and second pinned magnetic layers 105, 10
Reference numeral 9 denotes two ferromagnetic pinned layers 105a and 105, respectively.
c, 109a, and 109c, but is not limited thereto, and may be composed of two or more ferromagnetic pinned layers. In this case, a non-magnetic intermediate layer is inserted between these ferromagnetic pinned layers, and the directions of the magnetic moments of the adjacent ferromagnetic pinned layers are made antiparallel, so that the whole becomes ferrimagnetic. It is preferred that

As described above, the first and second pinned magnetic layers 10
5, 109 are so-called artificial ferrimagnetic states (synthe
tic ferrimagnet (synthetic ferrimagnetism), the first and second pinned magnetic layers 105 and 109 must have their magnetic moment directions firmly fixed to stabilize the first and second pinned magnetic layers 105 and 109. Can be.

Next, the first and second nonmagnetic conductive layers 106, 1
08 denotes the free magnetic layer 107 and the first and second pinned magnetic layers 1
05, 109, and a layer through which a sense current mainly flows. Cu, Cr, Au,
It is preferably formed of a conductive nonmagnetic material represented by Ag or the like, and particularly preferably formed of Cu. The thickness of each of the first and second nonmagnetic conductive layers 106 and 108 is preferably in the range of 2 to 3 nm.

The first antiferromagnetic layer 104 is formed so as to protrude from the free magnetic layer 107 on both sides in the X1 direction. Then, the protrusion 10 of the first antiferromagnetic layer 104 is formed.
On the insulating layers 4a and 104a, insulating layers 130 and 130, hard bias layers 132 and 132, insulating films 133 and 133, and lead layers 134 and 134 are sequentially stacked. First
A bias made of Ta, W or Cr is provided between the hard bias layers 132 and the insulating layers 130 and 130 located on the protrusions 104 a and 104 a of the antiferromagnetic layer 104 and on the side surfaces 112 b and 112 b of the stacked body 112. Underlayers 131 and 131 are stacked. A hard bias layer 132 on the bias underlayer 131 made of Cr;
When the hard bias layers 132 and 132 are formed,
The coercive force and the squareness ratio of the free magnetic layer 10
7 can be increased in the bias magnetic field necessary for forming a single magnetic domain.

The hard bias layers 132 are made of, for example, a CoPt (cobalt platinum) alloy, and
12 illustrates X ₁ direction on both sides, i.e. is provided on both sides in the track width direction. In particular, by disposing the hard bias layers 132 and 132 on both sides of the free magnetic layer 107 in the X1 direction in the drawing, a bias magnetic field is efficiently applied to the free magnetic layer 107 so that the magnetic moment directions of the free magnetic layer 107 are aligned, and Barkhausen noise is reduced. To reduce.

Side surface 11 of laminated body 112 in the track width direction
2b and 112b, insulating layers 130 and 130 are formed. The insulating layers 130 and 130 are formed on the side surfaces 112b of the stacked body 112 from the lower insulating layer 364 side of the hard bias layers 132 and 132 on both sides of the stacked body 112. , 112
It is formed to extend between b and the hard bias layers 132,132. On the hard bias layers 132, 132, insulating films 133, 133 are formed. The insulating films 133 and 133 form hard bias layers 132 and 132
It is formed to extend on both end portions 112a, 112a of the laminate 112 in the X1 direction in the drawing via the side surfaces 112b, 112b from above, and the side surfaces 112b, 112b at the positions of the hard bias layers 132, 132 on the laminate 112 side. Are connected to the insulating layers 130 and 130, respectively. Here, the both ends in the X1 direction of the laminate 112 are portions of the laminate 112 that are adjacent to the hard bias layers 132 and 132. The insulating layers 130, 130 and the insulating films 133, 133 are made of the same material and the same thickness as the insulating layers 30, 30, and the insulating films 33, 33 of the first embodiment shown in FIG. 1 or FIG. Preferably.

The pair of lead layers 134, 134 are formed with the hard bias layers 132, 13 via insulating films 133, 133.
2 and further extends to the center of the stacked body 112 beyond the insulating films 133 and 133. That is, the lead layers 134, 134 are provided with overlay portions 134a, 134a respectively extending to a part of the stacked body 112, and the tip portions 134b, 134b of the overlay portions 134a, 134a are more than the insulating films 133, 133. The end portion 134b extends to the center side of the laminate 112,
134b is joined to the laminate 112. Further, the lead layers 134, 134 are arranged at an interval of Tw mutually in the X1 direction in the figure. This interval Tw is the optical track width of the spin-valve thin-film magnetic element 101.

The preferred range of the width W1 of the overlay portions 134a, 134a and the preferred range of the width W2 of the tip portions 134b, 13b are determined by the width W shown in the first embodiment.
1, W2.

The lead layers 134, 134 are
4b and 134b are bonded to the laminated body 112, and portions other than the tip portions 134b and 134b are insulating films 133 and 133.
And the hard bias layers 132, 1
32. Therefore, the lead layers 134, 13
4 is applied to the stacked body 112 from FIG.
As shown by an arrow J in the middle, the voltage is applied to the stacked body 112 only from the tip portions 134b, 134b of the lead layers 134, 134. On the other hand, insulation between the lead layers 134, 134 and the hard bias layers 132, 132 is insulated by insulating films 133, 133, and furthermore, insulation between the hard bias layers 132, 132 and the side surfaces 112b, 112b of the stacked body 112. 1
30 and 130, the sense current flows from the side surfaces 112b and 112b of the multilayer body 112 via the hard bias layers 132 and 132 to both end portions 112a and 112a.
Does not flow to Further, the overlay portions 134a,
134a and both end portions 112a, 112a of the laminate 112
Since the insulating films 133 and 133 extend between them, the sense current does not flow from the overlay portions 134a and 134a toward both end portions 112a and 112a of the stacked body 112.

Therefore, as in the case of the spin-valve thin-film magnetic element 1 of the first embodiment, the sense current is most concentrated in the stacked body 112 of the spin-valve thin-film magnetic element 101 in the lead layer 134, Reference numeral 134 denotes a sensitivity region S in which none is formed. On the other hand, of the stacked body 112, the leading end portions 134b, 134b of the lead layer and the insulating films 133,
In the portion where 133 is applied, the sense current is reduced, the magnetoresistance (MR) effect is substantially reduced, and the detection sensitivity of the leakage magnetic field of the magnetic recording medium is reduced.
In particular, no sense current flows at both end portions 112a, 112a where the insulating films 133, 133 are formed, and the detection sensitivity of the leakage magnetic field of the magnetic recording medium becomes zero. Thus, the leading end portions 134b, 134b of the lead layer and the insulating film 13
The portion where 3,133 is attached is called an insensitive area N as shown in FIG.

The leading end portions 134 of the lead layers 134, 134
b and 134b are joined to the stacked body 112, the other parts of the lead layers 134 and 134 are insulated by the insulating films 133 and 133, and the side surfaces 112b and 112 of the stacked body 112 are
Insulating b with the insulating layers 130, 130 substantially contributes to the reproduction of the recording magnetic field from the magnetic recording medium (sensitivity region S), and substantially contributes to the reproduction of the recording magnetic field from the magnetic recording medium. A non-sensitive portion (insensitive region N) is formed, and the width Tw of the sensitive region S becomes the track width of the spin-valve thin-film magnetic element 101, which can cope with a narrow track. Further, since the sensitivity region S of the multilayer body 112 is separated from the hard bias layers 132, 132, it is not fixed by a strong bias magnetic field, and the output characteristics of the spin-valve thin-film magnetic element 101 can be improved. In particular, the sensing current is interrupted by the insulating layers 130, 130 and the insulating films 133, 133 at both end portions 112a, 112a of the stacked body 112, and the detection sensitivity becomes zero without the occurrence of the magnetoresistance effect. Side reading of the magnetic element 101 can be prevented.

The above-described spin-valve thin-film magnetic element 101
Corresponds to the first embodiment shown in FIG. 11, but the insulating film 13 extending on both end portions 112a, the upper surface and the side surfaces 112b, 112b of the laminated body 112
As for 3,133, the configuration corresponding to the insulating layers 30, 30 shown in FIG. 1 may be adopted so that the insulating layers 130, 130 are continuous.

The above-described spin-valve thin-film magnetic element 101
In the manufacturing method of the first embodiment, the first antiferromagnetic layer 104, the first pinned ferromagnetic layer 105a, the first nonmagnetic intermediate layer 105b, the second pinned ferromagnetic layer 105c, and the first nonmagnetic conductive layer 106 are formed in the stacked body forming step. A first diffusion prevention layer 107a, a ferromagnetic free layer 107b, a second diffusion prevention layer 107c, a second nonmagnetic conductive layer 108, a third ferromagnetic pinned layer 109a, a second nonmagnetic intermediate layer 109b, and a fourth ferromagnetic pinned layer. Except that the layer 109c, the second antiferromagnetic layer 110, and the protective layer 111 are sequentially laminated to form a laminated film, the production is performed in the same manner as any of the two production methods described in the first embodiment. Is possible.

The technical scope of the present invention is not limited to the first and second embodiments, and various changes can be made without departing from the spirit of the present invention. For example, in the first embodiment, the free magnetic layer 7 including the two ferromagnetic free layers that are antiferromagnetically coupled with the nonmagnetic intermediate layer interposed therebetween has been described. However, the present invention is not limited to this. The magnetic layer 7 may have a single-layer structure of a ferromagnetic layer or a stacked structure of a ferromagnetic layer and a diffusion prevention layer. Similarly, the fixed magnetic layer 4 may have a single-layer ferromagnetic layer structure.

Further, in the first embodiment, a back layer made of a conductive and non-magnetic material is formed between the free magnetic layer 7 and the protective layer 8, and the average free of the up-spin conduction electrons among the conduction electrons is formed. A configuration in which the process is extended by the backed layer to increase the resistance change rate may be employed.

Further, in the first embodiment, the antiferromagnetic layer in the laminated body 9 is formed so that the lower insulating layer (substrate) is lower than the free magnetic layer.
And a top single spin valve structure. That is, the underlayer, the free magnetic layer, the nonmagnetic conductive layer, the fixed magnetic layer, the antiferromagnetic layer, and the protective layer may be stacked in this order.

In the second embodiment, the free magnetic layer 107 may be composed of a non-magnetic intermediate layer and two ferromagnetic free layers which are antiferromagnetically coupled with the non-magnetic intermediate layer interposed therebetween. In addition, one or both of the first and second pinned magnetic layers 105 and 109 may have a ferromagnetic layer single layer structure.

In each of the above embodiments, the bias underlayers 31 and 131 may not be provided. In this case, the hard bias layers 32 and 132 may be made of a laminated film of FeCo and CoPt. it can.

Further, in the spin-valve thin film magnetic elements of the first and second embodiments, as a means for fixing the magnetic moment of the fixed magnetic layer, a sense current magnetic field of a sense current is used instead of the antiferromagnetic layer. Means may be adopted.

[0144]

As described above in detail, according to the spin-valve thin-film magnetic element of the present invention, the gap between the side surface of the laminate and the hard bias layer on both sides in the track width direction of the laminate. Since the side surface of the stacked body is insulated from the hard bias layer and the lead layer by the insulating layer by including the pair of insulating layers located, the shunt component of the detection current flowing directly to the side surface of the stacked body is reduced by the insulating layer. And the detection current is applied to the laminate from the overlay part. This prevents the magnetoresistance effect from appearing at both ends of the laminate and prevents side reading of the spin-valve thin-film magnetic element. It becomes possible to do.

According to the spin-valve thin-film magnetic element of the present invention, since the thickness of the insulating layer on the side surface of the laminated body is 0.5 nm or more, it is possible to prevent pinholes from being formed in the insulating layer. The side surface of the laminate can be insulated from the hard bias layer and the lead layer by the insulating layer, and the thickness of the insulating layer on the side surface of the laminate is set to 5 nm or less, so that the hard bias layer The direction of the magnetic moment of the free magnetic layer can be sufficiently aligned in a predetermined direction by the bias magnetic field. In the present invention, the thickness of the insulating layer on the upper surface of the laminate is in the range of 0.5 nm or more and 20 nm or less. This insulating film can surely block off, and it is possible to reliably prevent side reading of the spin-valve thin-film magnetic element.

In the present invention, the insulating layer extends from the side surface of the laminated body to the substrate side of the hard bias layer and both ends in the track width direction of the upper surface of the laminated body, so that the insulating layer extends from the lead layer to the hard bias layer. The detection current can be prevented from flowing into the stacked body through the stack, thereby preventing the magnetoresistance effect from appearing at both ends of the stacked body and preventing the side reading of the spin-valve thin film magnetic element. Becomes possible.

Further, in the present invention, a bias underlayer is provided between the hard bias layer and the insulating layer, so that the hard bias layer is formed on the bias underlayer. The coercive force and the squareness ratio are increased, and the bias magnetic field required for making the free magnetic layer a single magnetic domain can be increased.

Since the width of the leading end portion of the lead layer is 0.01 μm or more and the bonding area between the lead layer and the laminate is widened, the contact resistance at the leading end portion is reduced and the detection current can be efficiently supplied to the laminate. Can be given. Furthermore, since the hard bias layer and the tip of the lead layer are separated from each other, the bias magnetic field of the hard bias layer is appropriately weakened in the sensitivity region at the center of the track width of the spin-valve thin-film magnetic element. The reproduction sensitivity can be improved without the magnetization of the magnetic layer being fixed more strongly than necessary.

According to the present invention, an insulating film is provided between the hard bias layer and the lead layer so as to extend to both ends in the track width direction of the laminated body. Since the shunt component of the detection current flowing in can be regulated, the generation of the shunt component of the detection current flowing into the side surface of the stacked body can be further prevented. Here, the insulating layer and the insulating film may be integrated, and may be formed of the same material.

Since the thin-film magnetic head according to the present invention includes the spin-valve thin-film magnetic element described above as a read element for magnetically recorded information, the thin-film magnetic head having a low probability of occurrence of side reading is provided. Can be configured. According to the flying magnetic head, since the thin-film magnetic head is provided, a flying magnetic head having a high reproduction output of magnetic information and a low probability of occurrence of side reading can be formed.

Next, in the method of manufacturing a spin-valve thin-film magnetic element of the present invention, a first lift-off resist is formed on a substrate, and the substrate is further laminated by irradiating etching particles from the direction of an angle θ _d2 to the substrate. After the body is formed, sputtered particles are deposited from the direction of the angle θ _d1 (where θ _d2 > θ _d1 ) with respect to the substrate, so as to correspond to the cut portion from the side surface of the stacked body and from the side surface. Forming an insulating layer extending to a position above the stacked body, further forming a hard bias layer by depositing another sputtered particle from a direction substantially equal to the angle θ _d2, and forming a second lift-off resist. Since the lead layer is formed up to the top of the laminate at the notch position, the insulating film extends to the side surface of the laminate, the substrate side of the hard bias layer and both ends of the track width of the laminate, and The spin-valve thin-film magnetic element can be manufactured in which the layer can be extended to the center of the upper surface of the stacked body in the track width direction with respect to the insulating film and bonded to the stacked body, and side reading can be prevented.

Further, in the method of manufacturing a spin-valve thin-film magnetic element according to the present invention, the angle θ when forming the insulating layer is
_{Since d1} is set smaller than the angle θ _d2 when forming the hard bias layer, it is possible to form the insulating layer up to the position of the cut portion of the first lift-off resist,
The shunt component of the detection current can be cut off as much as possible.

Next, another manufacturing method of the spin-valve thin-film magnetic element of the present invention is as follows. After forming a laminated body on a substrate, an insulating film and a hard bias layer on both sides thereof, a second lift-off resist is formed. By depositing sputter particles from the direction of the angle θ _d3 to form an insulating film extending to both sides and the side surfaces of the laminate,
By depositing another sputtered particle from the direction of the angle θ _d4 (where θ _d3 > θ _d4 ) with respect to the substrate, the sputtered particle is located at a position corresponding to the cut portion of the second lift-off resist from above the hard bias layer. Since a pair of lead layers extending over the laminate are formed, the insulating film extends over both ends of the track width of the laminate, and the lead layer extends more toward the center of the laminate than the insulating film. It is possible to manufacture a spin-valve thin-film magnetic element that can be bonded to a laminate and that can prevent side reading. Here, the insulating layer and the insulating film may be integrated,
In addition, they may be made of the same material.

In the present invention, since the angle θ _{d4 at} the time of forming the lead layer is set smaller than the angle θ _{d3 at} the time of forming the insulating film, the lead layer is positioned at the position of the cut portion of the second lift-off resist. And the shunt component of the detection current can be cut off as much as possible.
Here, the insulating layer and the insulating film may be integrated, and may be formed of the same material.

Further, according to the method of manufacturing a spin-valve thin-film magnetic element of the present invention, by irradiating etching particles after forming an insulating film, a stack at a position corresponding to a cut portion of the second lift-off resist is formed. Since a part of the body is etched, the bonding surface between the lead layer and the laminate can be cleaned, and the lead layer and the laminate can be securely joined to efficiently supply a detection current to the laminate.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view of a spin-valve thin-film magnetic element according to a first embodiment of the present invention.

FIG. 2 is a perspective view of a flying magnetic head including the spin-valve thin-film magnetic element of FIG.

FIG. 3 is a schematic cross-sectional view of a thin-film magnetic head including the spin-valve thin-film magnetic element of FIG. 1;

FIG. 4 is a view for explaining the method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a process diagram showing a stacked body forming step.

FIG. 5 is a view for explaining the method for manufacturing a spin-valve thin-film magnetic element of the present invention, and is a view showing a step of forming a stacked body.

FIG. 6 is a diagram for explaining the method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a process diagram illustrating an insulating layer forming process.

FIG. 7 is a diagram for explaining the method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a process diagram showing a hard bias layer forming step and an insulating film forming step.

FIG. 8 is a view for explaining the method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a view showing a step of forming a second resist.

FIG. 9 is a diagram for explaining the method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a process diagram showing an etching process.

FIG. 10 is a view for explaining the method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a view showing a step of forming a lead layer.

FIG. 11 is a schematic cross-sectional view of a spin-valve thin-film magnetic element according to another embodiment of the present invention.

FIG. 12 is a diagram for explaining another method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a process diagram showing a stacked body forming step.

FIG. 13 is a view for explaining another method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a view showing a step of forming a hard bias layer.

FIG. 14 is a view for explaining another method for manufacturing the spin-valve thin film magnetic element of the present invention, and is a view showing a second resist forming step.

FIG. 15 is a view for explaining another method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a view showing an insulating film forming step.

FIG. 16 is a view for explaining another method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a view showing an etching step.

FIG. 17 is a view for explaining another method for manufacturing the spin-valve thin-film magnetic element of the present invention, and is a view showing a step of forming a lead layer.

FIG. 18 is a schematic sectional view of a spin-valve thin-film magnetic element according to a second embodiment of the present invention.

FIG. 19 is a schematic cross-sectional view of a conventional spin-valve thin-film magnetic element.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 spin-valve thin-film magnetic element 4 antiferromagnetic layer 4 a extension 5 fixed magnetic layer 5 a first ferromagnetic pinned layer (ferromagnetic layer) 5 b first nonmagnetic intermediate layer (nonmagnetic intermediate layer) 5 c second ferromagnetic Pinned layer (ferromagnetic layer) 6 Nonmagnetic conductive layer 7 Free magnetic layer 9 Stack 9a Both end portions 9b Side surface 30 Insulating layer 32 Hard bias layer 33 Insulating film 34 Lead layer 34a Overlay portion 34b Tip portion 51, 57, 60 Contact Surface 52, 58, 61 Side surface 53, 59, 62 Notch L1 First lift-off resist L2, L12 Second lift-off resist S Sensitive area N Insensitive area

Claims (21)

[Claims] 1. A laminate having at least a free magnetic layer and a fixed magnetic layer on a substrate and exhibiting a magnetoresistive effect, and a magnetic moment of the free magnetic layer located at least on both sides of the free magnetic layer in the track width direction. A pair of hard bias layers whose directions are aligned in one direction, at least a pair of lead layers stacked on the hard bias layer, and at least a position between the side surfaces on both sides in the track width direction of the stacked body and the hard bias layer. A pair of insulating layers,
Wherein each of the pair of lead layers is provided with an overlay portion extending over a part of the laminate, and a tip portion of the overlay portion is joined to the laminate. Valve type thin film magnetic element. 2. The spin-valve thin-film magnetic element according to claim 1, wherein a thickness of the insulating layer on a side surface of the stacked body is in a range from 0.5 nm to 5 nm. 3. The method according to claim 1, wherein the insulating film is made of aluminum oxide, silicon oxide, tantalum oxide, titanium oxide, zirconium oxide, hafnium oxide, chromium oxide, vanadium oxide,
3. The spin-valve thin-film magnetic element according to claim 1, wherein the spin-valve thin-film magnetic element is made of any one of niobium oxide or a mixture of two or more thereof. 4. The spin-valve thin-film magnetic element according to claim 1, wherein the insulating layer extends on the substrate side of the hard bias layer. 5. The spin-valve thin-film magnetic element according to claim 4, further comprising a bias underlayer between said hard bias layer and said insulating layer. 6. The insulating layer extends from a side surface of the multilayer body to both ends in a track width direction of an upper surface of the multilayer body, and overlay portions of the pair of lead layers are provided, respectively, and a tip portion of the overlay portion The spin-valve thin-film magnetic element according to claim 1, wherein the second magnetic field extends from the insulating film to a center side of the stacked body and is bonded to the stacked body. 7. The spin-valve thin-film magnetic element according to claim 6, wherein the thickness of the insulating layer on the upper surface of the stacked body is in a range from 0.5 nm to 20 nm. 8. The width dimension in the track width direction of each tip portion of the overlay portion joined to the laminate is 0.01 μm.
The spin-valve thin-film magnetic element according to any one of claims 1 to 7, wherein the thickness is not less than m and not more than 0.05 µm. 9. The spin-valve thin film magnetic element according to claim 8, wherein a width of the overlay portion in a track width direction is in a range of 0.1 μm or more and 0.3 μm or less. 10. The laminated body includes at least the free magnetic layer, the nonmagnetic conductive layer, the fixed magnetic layer, and an antiferromagnetic layer that fixes a magnetic moment direction of the fixed magnetic layer by an exchange coupling magnetic field. 6. The spin-valve thin-film magnetic element according to claim 1, wherein the spin-valve thin-film magnetic element is formed by being sequentially laminated. 11. The laminated body includes a non-magnetic conductive layer, the fixed magnetic layer, and a magnetic moment direction of the fixed magnetic layer fixed by an exchange coupling magnetic field on both sides in the thickness direction of the free magnetic layer. 6. The spin-valve thin-film magnetic element according to claim 1, wherein the ferromagnetic layer is formed by laminating the ferromagnetic layers at least sequentially. 12. The semiconductor device according to claim 1, wherein an insulating film is provided between the hard bias layer and the lead layer, the insulating film extending to both ends in the track width direction of the stacked body. A spin-valve thin-film magnetic element according to any one of the above. 13. A thin-film magnetic head comprising the spin-valve thin-film magnetic element according to claim 1 as a read element for magnetically recorded information. 14. A flying magnetic head comprising a slider provided with the thin-film magnetic head according to claim 13. 15. After forming a laminated film including at least a free magnetic layer and a pinned magnetic layer on a substrate, a contact surface in contact with the laminated film, and both side surfaces sandwiching the contact surface are formed on the laminated film. Forming a first lift-off resist comprising a pair of cut portions provided between the contact surface and the both side surfaces and on both sides in the track width direction of the contact surface. By irradiating etching particles to the entirety or a part of the laminated film located on the outer side in the track width direction from both side surfaces of the first lift-off resist, a substantially trapezoidal cross section is formed and both outer side surfaces on the track width direction are removed. A stack forming step of forming a stack having, by depositing sputter particles from the direction of the angle θ _d1 with respect to the substrate, on the side surface of the stack and at a position corresponding to the cut portion from this side surface Before there An insulating layer forming step of forming an insulating layer extending up to the laminated body; and a direction of an angle θ _d2 (where θ _d2 > θ _d1 ) with respect to the substrate on the insulating layer on both sides of the laminated body. A bias layer forming step of stacking a pair of hard bias layers located at least on the same layer as the free magnetic layer by depositing another sputtered particle from the first magnetic layer, and after removing the first lift-off resist,
A contact surface narrower than the contact surface of the lift-off resist, both side surfaces sandwiching the narrow contact surface, and the narrow contact surface between the contact surface and the both side surfaces. A second resist forming step of forming a second lift-off resist comprising a pair of cut portions provided on both sides in the track width direction at substantially the center of the upper surface of the stacked body in the track width direction; A lead layer forming step of forming a pair of lead layers extending from above the insulating layer to above the laminate at a position corresponding to the cut portion of the second lift-off resist. Of manufacturing a spin-valve thin film magnetic element. 16. The method according to claim 16, further comprising irradiating another etching particle after forming the second lift-off resist to etch a part of the laminate at a position corresponding to a cut portion of the second lift-off resist. The method for manufacturing a spin-valve thin-film magnetic element according to claim 15. 17. A range of the angle theta _d1 is 40 to 80 °, the spin valve as claimed in claim 15 or claim 16 wherein the angle theta _{d 2} is equal to or in the range of 60 to 90 ° Of manufacturing a thin film type magnetic element. 18. An insulating film forming step of stacking an insulating film on the hard bias layer by depositing another sputtered particle after stacking the hard bias layer. A method for manufacturing the spin-valve thin-film magnetic element according to claim 17. 19. After forming a laminated film including at least a free magnetic layer and a pinned magnetic layer on a substrate, the contact surface in contact with the laminated film and both side surfaces sandwiching the contact surface are formed on the laminated film. Forming a first lift-off resist comprising a pair of cut portions provided between the contact surface and the both side surfaces and on both sides in the track width direction of the contact surface, further forming etching particles on the laminated film; By etching all or a part of the laminated film located on the outer side in the track width direction from both side surfaces of the first lift-off resist, thereby forming a substantially trapezoidal sectional view and having both outer side surfaces on the outer side in the track width direction. Forming an insulating layer extending on the side surface of the laminate by depositing sputter particles on both sides of the laminate, and forming an insulating layer on both sides of the laminate. Spatter By depositing a child, and the bias layer forming step of laminating at least a pair of hard bias layer located at the same level as the free magnetic layer on the insulating layer, after removing the first lift-off resist, the first
A contact surface narrower than the contact surface of the lift-off resist, both side surfaces sandwiching the narrow contact surface, and the narrow contact surface between the contact surface and the both side surfaces. Forming a second lift-off resist including a pair of cut portions provided on both sides in the track width direction substantially at the center of the upper surface of the stacked body; and forming an angle θ _{d3 with} respect to the substrate. An insulating film forming step of forming a pair of insulating films extending from a position on the hard bias layer to a position on the stacked body at a position corresponding to the cut portion by depositing sputter particles from the direction of On the other hand, by depositing other sputtered particles from the direction of the angle θ _d4 (where θ _d3 > θ _d4 ), from the insulating film to the laminated body at the position corresponding to the cut portion of the second lift-off resist. A rib for forming a pair of extending lead layers And a step of forming a lead layer. 20. The method according to claim 20, further comprising irradiating another etching particle after forming the insulating film to etch a part of the laminate at a position corresponding to a cut portion of the second lift-off resist. Item 20. The method for producing a spin-valve thin-film magnetic element according to item 19. 21. A range of the angle theta _d3 is 60 to 90 °, the spin valve as claimed in claim 19 or claim 20 wherein the angle theta _{d 4} is characterized in that in the range of 40 to 80 ° Of manufacturing a thin film type magnetic element.