JP2002148011A - Apparatus and method for treatment of substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique by which the film thickness of a thin film formed on the surface of a substrate is measured precisely while the substrate is being conveyed. SOLUTION: A vacuum chamber 50 comprises film thickness sensors 71, 72 which are arranged at the inside of a conveyance chamber 40. Measuring coils 11 are installed inside the sensors 71, 72. When the substrate 5 is conveyed between treatment chambers, the measuring coils 11 are constituted in such a way that the substrate 5 is brought close to the sensors 71, 72 inside the conveyance chamber 40. When an AC voltage is applied to the measuring coils 11, an eddy current is generated in the metal thin film on the surface of the substrate 5. The inductance component of the measuring coils 11 is changed by the eddy current. Its change amount is changed according to the film thickness of the thin film formed on the surface of the substrate 5. When the change amount of the inductance component is found, the film thickness of the thin film formed on the surface of the substrate 5 can be found precisely and quickly. The film thickness of the thin film can be detected while the substrate 5 is being conveyed and before the substrate 5 is shifted to a next treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to an improvement in a technique for transporting a substrate while measuring the thickness of a thin film formed on the substrate. About.

[0002]

2. Description of the Related Art A conventional vacuum multi-chamber 150 is shown in FIG. This multi-chamber 150
The plane has a transfer chamber 140 having a hexagonal shape. Transfer room 1
40 is connected to first to fifth processing chambers 151 to 155 and a loading / unloading chamber 156 via vacuum valves. A vacuum evacuation system (not shown) is connected to each of these chambers, so that the inside of each chamber can be evacuated.

The first to fifth processing chambers 151 to 155 are configured so that a thin film can be formed on the substrate surface inside each of the processing chambers. In the transfer chamber 140, a transfer robot 145 is disposed. The transfer robot 145 has a hand 143, and transfers the substrate to the hand 1
The substrate is transported between the chambers 151 to 156 in a state where the substrate is placed on the substrate 43.

The operation of forming a multilayer film on the substrate surface in the vacuum multi-chamber 150 will be described below. Here, a case where a two-layer film is formed in the first and second processing chambers 151 and 152 will be described.

First, with all vacuum valves closed,
The inside of each chamber other than the substrate loading / unloading chamber 156 is evacuated to a predetermined degree of vacuum. In this state, the door (not shown) of the loading / unloading chamber 156 is opened, and the substrate is loaded into the loading / unloading chamber 156. Then, the inside of the loading / unloading chamber 156 is evacuated. The vacuum valve in between is opened, the hand 143 of the transfer robot 140 is put into the carry-in / out room 156, the substrate is placed on the hand 143, and the hand 143 is put into the transfer room 140.

Next, the first processing chamber 151 and the transfer chamber 140
Is opened, the hand 143 is put into the first processing chamber 151, the substrate is positioned at a predetermined position in the first processing chamber 151, and the hand 143 is taken out of the processing chamber 151.

Next, the first processing chamber 151 and the transfer chamber 14
The vacuum valve between 0 is closed, and the first thin film is formed in the processing chamber 151. When the first film forming process is completed, the vacuum valve between the first processing chamber 151 and the transfer chamber 140 is opened, the hand 143 is put into the first processing chamber 151, and the substrate is transferred onto the hand 143. Then, the hand 143 is taken out of the first processing chamber 151.

Next, the first processing chamber 151 and the transfer chamber 140
Is closed, the vacuum valve between the second processing chamber 152 and the transfer chamber 140 is opened, and the substrate is loaded into the second processing chamber 152 in the same manner as the above-described operation. Is performed. Thereafter, the substrate is transferred from the second processing chamber 152 into the transfer chamber 140, the vacuum valve between the transfer chamber 156 and the transfer chamber 140 is opened, and the transfer robot 14 is opened.
0 is placed in the carry-in / out room 156, the substrate is positioned in the carry-in / out room 156, and the carry-in / out room 156 and the transfer room 14 are placed.
After closing the vacuum valve between 0 and the atmospheric pressure in the loading / unloading chamber 156, the door of the loading / unloading chamber 156 is opened, and the substrate is taken out of the apparatus. Through the above steps, a two-layer film can be formed on the substrate surface in a vacuum atmosphere.

However, in the above-described vacuum multi-chamber 150, the film forming process in each processing chamber is performed by a method such as time management, and the film is not formed while monitoring the actual film thickness of the thin film. Therefore, for example, the thickness of the first thin film actually formed is less than a predetermined value,
In other cases, the film thickness was not uniform on the substrate surface.

Conventionally, even in such a case, the process shifts to the second-layer film forming process. Therefore, after the second-layer thin film is formed, the thickness of the two-layer film does not reach a predetermined value. Or
There has been a problem that the thickness of the two-layer film is not uniform. For this reason, after forming a thin film on the substrate surface,
Before moving on to the next film forming process, there has been an increasing demand for obtaining the film thickness and film thickness distribution of the thin film.

[0011]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned disadvantages of the prior art, and its object is to form a thin film on the surface of a substrate and then proceed to the next processing. An object of the present invention is to provide a technique capable of accurately determining the thickness of a thin film.

[0012]

According to a first aspect of the present invention, there is provided a transfer chamber having a transfer chamber and a processing chamber connected to the transfer chamber. A substrate processing apparatus configured to be transported into the processing chamber and configured to be able to process a substrate in the processing chamber, including a film thickness sensor, a power supply, and a measurement unit, wherein the film thickness sensor includes:
A measurement coil disposed in the transfer chamber, wherein the power supply applies an AC voltage to the measurement coil when the substrate is close to the measurement coil, and generates an eddy current in the conductive thin film on the substrate surface. The measuring means is configured to measure a signal generated in the measuring coil under the influence of the eddy current. The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the plurality of processing chambers are provided, and at least one of the processing chambers grows a conductive thin film on the surface of the substrate. It was configured to let. The invention according to claim 3 is the substrate processing apparatus according to any one of claims 1 or 2, wherein a plurality of the processing chambers are provided, and at least one of the processing chambers includes the substrate. Is configured to etch a conductive thin film formed on the surface of the substrate. According to a fourth aspect of the present invention, there is provided a processing unit configured to grow a conductive thin film on a surface of a substrate, and a transport unit configured to move the substrate to the processing unit. An apparatus for processing a substrate, comprising: a film thickness sensor, a power supply, and a measurement unit, wherein the film thickness sensor includes a measurement coil disposed at a predetermined position, and the transfer unit measures the substrate by the measurement. The power supply is configured to be moved between a coil and the processing unit, and the power supply applies an AC voltage to the measurement coil when approaching the measurement coil, and generates an eddy current in the conductive thin film on the substrate surface. Configured to generate
The measurement means is configured to measure a signal generated in the measurement coil due to the influence of the eddy current. According to a fifth aspect of the present invention, in any one of the first to fourth aspects,
Item is a substrate processing apparatus, wherein the measurement coil,
The substrate is arranged in a moving path. Claim 6
The present invention is the substrate processing apparatus according to any one of claims 1 to 5, wherein the film thickness sensor has a reference coil and two reference resistors, Is connected in series to the measurement coil, and when the measurement coil and the substrate face each other, the measurement coil is disposed so as to be located farther from the substrate than the measurement coil. The series connection circuit of the two reference resistors and the series connection circuit of the measurement coil and the reference coil are connected in parallel with each other, and the measurement unit includes a series connection of the measurement coil and the reference coil. When an AC voltage is applied to both ends of the connection circuit, a potential difference between a portion where the measurement coil and the reference coil are connected and a portion where the two reference resistors are connected to each other is applied to the measurement coil. Arising It is configured to measure a signal. According to a seventh aspect of the present invention, a conductive thin film is formed on a substrate surface inside a film forming chamber, and after removing the substrate on which the thin film is formed from the film forming chamber, the thickness of the thin film is obtained. A method of processing a substrate, wherein after removing the substrate from the film forming chamber, the substrate and the measurement coil are brought close to each other,
An AC voltage is applied to the measurement coil to generate an eddy current in the conductive thin film on the substrate surface, a signal generated in the measurement coil due to the influence of the eddy current is detected, and based on the signal, the surface of the substrate is detected. The thickness of the thin film formed on the substrate is determined. The invention according to claim 8 is a method of processing a substrate, in which the thickness of the thin film is determined before etching the conductive thin film formed on the surface of the substrate inside the etching chamber. Before being carried into the etching chamber, the substrate and the measurement coil are brought close to each other, an AC voltage is applied to the measurement coil, and an eddy current is generated in the conductive thin film on the substrate surface. Detecting a signal generated in the measurement coil, and based on the signal,
The thickness of a thin film formed on the substrate surface is obtained. The invention according to claim 9 is a method of processing a substrate, wherein after etching a conductive thin film formed on a substrate surface inside an etching chamber, the substrate is taken out of the etching chamber and the substrate is measured. Close to the coil,
An AC voltage is applied to the measurement coil to generate an eddy current in the conductive thin film on the substrate surface, a signal generated in the measurement coil due to the influence of the eddy current is detected, and based on the signal, the surface of the substrate is detected. Is characterized in that the thickness of the thin film formed on the substrate is determined. According to a tenth aspect of the present invention, when performing a surface treatment for increasing or decreasing the thickness of a conductive thin film formed on a substrate surface in a processing chamber, the substrate is placed in the processing chamber during the surface treatment. A method of processing a substrate for obtaining the thickness of the thin film, wherein the substrate and the measurement coil are brought close to each other while the substrate is taken out of the processing chamber, and an AC voltage is applied to the measurement coil. Generating an eddy current in the conductive thin film on the substrate surface, detecting a signal generated in the measurement coil due to the influence of the eddy current, and, based on the signal, calculating a film thickness of the thin film formed on the substrate surface. It is characterized by seeking. According to an eleventh aspect of the present invention, there is provided the substrate processing method according to any one of the seventh to tenth aspects, wherein, while moving the substrate near the measurement coil,
A signal generated in the measurement coil is measured. The invention according to claim 12 is the invention according to claims 7 to 11.
The method of processing a substrate according to any one of the preceding claims, wherein a reference coil connected in series with the measurement coil is disposed at a position farther than the measurement coil with respect to the substrate, and two reference resistors are connected in series. Connected, and a series connection circuit of the two reference resistors, and a series connection circuit of the measurement coil and the reference coil are connected in parallel to form a Maxwell inductance bridge, and the Maxwell inductance bridge is used. Then, a signal generated in the measurement coil is detected by obtaining a change in the inductance component of the measurement coil.

The present invention is configured as described above,
The measurement coil provided in the film thickness sensor is arranged so as to be close to the substrate. In this state, an AC voltage is applied to the measurement coil to generate an eddy current on the substrate, and the eddy current generated on the substrate is affected by the eddy current. The thickness of the thin film formed on the substrate surface is obtained by obtaining the signal generated in the measurement coil, for example, the amount of change in the inductance component.

The amount of change in the inductance component of the measurement coil is obtained by a high-sensitivity measurement circuit using an inductance bridge. FIG. 11 is a block diagram for explaining the measurement principle of the present invention, and reference numeral 10 indicates a Maxwell inductance bridge.

The inductance bridge 10 includes two reference resistors 14 and 15 connected in series, and a reference coil 12 and a measuring coil 11 connected in series, which are connected in parallel.

When the inductance bridge 10 is balanced, an AC voltage source 27 is connected between the input terminals 21 and 22 of the inductance bridge 10 and an AC voltage V _D is applied to the inductance bridge 10. No voltage appears between the ten output terminals 23,24.

The balance of the inductance bridge 10 is
When the substrate 5 is brought close to the measuring coil 11 in a state where it has been removed,
An eddy current is generated in the substrate 5, and the measurement coil 1
The inductance value of 1 changes and the balance is lost.
Voltage V between the power terminals 23 and 24 _SAppears.

When the AC voltage V _D applied to the inductance bridge 10 is represented by V _D = V _D0 · exp (iωt), the voltage V _S appearing between the output terminals 23 and 24 is

V _S = V _S0 · exp (iωt + φ) = V _S0
・ Exp (iωt) ・ cos (φ) + i ・ V _S0・ exp (i
ωt) · sin (φ).

A voltage having a phase synchronized with the input voltage V _D of this voltage V _S and a voltage having a phase shifted by 90 ° are measured, and a change in the magnitude of the inductance component of the measurement coil 11 is determined from the ratio. Desired.

The inductance component variation represents the eddy current loss in the substrate 5, since the frequency of the AC voltage V _D is known, it resistivity of the metal thin film of the substrate 5 and the surface of the substrate 5 is known If so, the thickness of the metal thin film is required.

FIG. 13 is a graph showing an example of the relationship between the amount of change in the inductance component and the thickness of the copper thin film on the substrate surface. The frequency of the applied AC signal is 2 MHz. The size of the AC voltage V _D is about several V.

As can be seen from this graph, since the amount of change in the inductance component of the measurement coil 11 changes according to the thickness of the copper thin film on the substrate surface, the relationship between the amount of change in the inductance component and the film thickness is determined in advance. Before the thin film is formed, the substrate is brought close to the measurement coil to measure the amount of change in the inductance component, a copper thin film is formed on the substrate surface, and the substrate after the film formation is used as the measurement coil. When the amount of change in the inductance component of the measurement coil is obtained by approaching, the thickness of the formed thin film can be obtained from the obtained amount of change in the inductance component.

As described above, according to the present invention, the measuring coil is brought close to the substrate, an eddy current is generated in the conductive thin film on the substrate surface, and the eddy current changes the inductance component of the measuring coil. Since the thickness of the thin film is determined, the actual thickness can be determined accurately. Further, since the thickness of the thin film is determined by determining the amount of change in the inductance component, the thickness at a predetermined position can be determined in a very short time.

According to the present invention, a conductive thin film is formed on the surface of the substrate inside the film forming chamber, and after the substrate is taken out of the film forming chamber, the measuring coil is arranged at a position close to the substrate.
The thickness of the thin film can be determined accurately.

Before the conductive thin film formed on the substrate surface is etched in the etching chamber, the substrate and the measuring coil are brought close to each other in advance, and the thickness of the conductive thin film is determined accurately. The etching time can be set accurately.

On the other hand, in the case where the conductive thin film is etched, if the etching is insufficient, it becomes a defective product. After the etching process is completed, the substrate and the measuring coil are brought close to each other, and the conductive film after the etching is removed. When the thickness of the conductive thin film is measured, insufficient etching can be detected. When insufficient etching is detected, additional etching can be performed by performing etching again without taking out from the vacuum atmosphere.

Further, in the processing chamber, when performing a surface treatment for increasing or decreasing the thickness of the conductive thin film formed on the substrate surface, for example, a film forming process, an etching process, or the like, during the surface treatment, The thickness of the thin film formed on the substrate surface can be obtained by removing the substrate from the processing chamber and arranging the measurement coil at a position close to the substrate in that state. With this configuration, it is possible to accurately know whether the thickness of the thin film is increasing or decreasing.

Further, in the present invention, a configuration may be adopted in which the film thickness at a plurality of locations on the substrate is determined while moving the substrate near the measurement coil. With this configuration, the film thickness can be obtained at a plurality of locations on the substrate surface, and the average value of the obtained film thicknesses can be obtained.
The film thickness distribution can also be determined. Therefore, for example, in the case where a metal thin film is formed on the substrate surface in a plurality of times, the film thickness distribution of the thin film can be obtained after the first film forming process, and the film thickness on the substrate surface varies. In such a case, by performing the second film forming process so as to compensate for the variation, the thickness of the metal thin film can be controlled to be uniform.

Further, since the film thickness can be measured using a small measuring coil, even if it is difficult to secure a dedicated space for film thickness measurement as in a vacuum multi-chamber, the film thickness can be measured in the transfer chamber. The film thickness can be accurately and quickly measured simply by disposing the coil.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference numeral 50 in FIG. 1 shows a vacuum multi-chamber of an embodiment of a substrate processing apparatus according to the present invention. The multi-chamber 50 has a transfer chamber 40 having a hexagonal flat surface. The transfer chamber 40 includes a first through fifth processing chamber 51 to 55, a transport room 56 are connected via a vacuum valve 58 ₁ to 58 _6. A vacuum evacuation system (not shown) is connected to each of these chambers, so that the inside of each chamber can be evacuated. Closing the vacuum valve 58 _{1-58 6,} the interior of the first to fifth processing chamber 51 to 55 and transport room 56 is adapted to be separated from the transfer chamber 40.

A transfer robot 45 is disposed in the transfer chamber 40. The transfer robot 45 is operated by a drive mechanism (not shown), and is attached to a support body 44 that can expand and contract vertically in the center of the transfer chamber 40 and that can rotate in the horizontal direction, and is configured to be expandable and contractible. And a hand 43 attached to the distal ends of the arms 41 and 42 and made of an insulator. By rotating the support body 44 to expand and contract the arms 41 and 42, the hand 43 at the distal end is moved to each chamber. Can be moved between. The hand 43 is configured such that a substrate can be placed on its upper surface, and the substrate can be transported between the chambers 51 to 56 while the substrate is placed on the hand 43.

Further, on the ceiling side in the transfer chamber 40, first,
The film thickness sensors 7 ₁ and 7 ₂ are arranged near the second processing chambers 51 and 52, respectively. This film thickness sensor 7
_1, 7 _2, as shown in FIG. 11, the measuring coil 11 and the reference coil 12, connected in series two of the reference resistor 14,
15.

The measurement coil 11 is disposed below the reference coil 12 as shown in FIG.
The measurement coil 11 and the reference coil 12 are connected in series, and the series connection circuit is connected in parallel with the series connection circuit of the reference resistors 14 and 15 also connected in series to form the Maxwell inductance bridge 10. ing.

The inductance bridge 10 has input terminals at both ends of reference resistors 14 and 15 connected in series. Reference numerals 21 and 22 in FIG. 11 indicate the input terminals. Further, a portion where the measuring coil 11 and the reference coil 12 are connected and a portion where the two reference resistors 14 and 15 are connected to each other are output terminals of the inductance bridge 10. Output terminals are shown by reference numerals 23 and 24 in FIG.

The inductance bridge 10 is connected to a measuring device 8 arranged outside the transfer chamber 40. The measuring devices 8 ₁ and 8 ₂ include an AC voltage source 26 and a measuring device 27.
And

The AC voltage source 26 is connected to the input terminals 21 and 22 of the inductance bridge 10. When the AC voltage source 26 is activated, an AC current can be supplied to the measuring coil 11. .

The measuring device 27 includes the inductance bridge 1
0 output terminals 23 and 24 and output terminal 2
By measuring the voltage appearing between 3 and 24, the amount of change in the inductance component of the measurement coil 11, which will be described later, can be obtained.

A distance measuring device 9 is arranged on the ceiling side in the transfer chamber 40 so as to be close to the film thickness sensor 7 having such a configuration. This distance measuring device 9 irradiates a laser beam to a measurement object located below, obtains a phase difference between reflected light reflected from the measurement object and irradiation light, and, based on the phase difference, determines a phase difference between a substrate surface to be described later. It is configured to be able to measure the distance to the measurement coil. The distance measured in this way is output to the transfer robot 45 and the transfer robot 4
Numeral 5 is configured so that the hand 43 can be moved according to this distance.

The vacuum multi-chamber 50 having the structure described above.
In this case, as shown in FIG. 2, in a state where the substrate is not placed on the hand 43, the inductance bridge is balanced so that the voltage Vs appearing between the output terminals 23 and 24 of the inductance bridge becomes 0V.

An operation of forming a two-layer metal thin film (a metal thin film is an example of a conductive thin film) using the vacuum multi-chamber 50 having the above-described configuration will be described below. First, in all the closed state of the vacuum valve 58 _{1-58 6,} the interior of each chamber other than transport room 56 is evacuated, keep a predetermined degree of vacuum.

In this state, the door (not shown) of the loading / unloading chamber 56 is opened, and the substrate 5 is loaded into the loading / unloading chamber 56. Then, the inside of the loading / unloading chamber 56 is evacuated. Vacuum valve 58 between the transfer chamber 40 and
₆ is opened and the hand 43 of the transfer robot 45 is moved into and out of the loading / unloading room 5.
6, one substrate 5 is placed on the hand 43, and the hand 43 is put into the transfer chamber 40.

[0043] Thus, in a state of being placed on the substrate 5 on the hand 43, the hand 43 is positioned below the thickness sensor 7, to position the substrate 5 in the measurement coil 11 near the thickness sensor 7 _1.

In this state, when the AC voltage source 26 is activated to supply an AC voltage to the measuring coil 11, an AC magnetic field is formed inside the measuring coil 11 and a space around the coil. This AC magnetic field also reaches the substrate 5 located near the measurement coil 11, and an eddy current is generated inside the substrate 5. This eddy current causes the inductance bridge to lose its balance, and a voltage is generated between the output terminals 23 and 24 of the inductance bridge. By measuring this voltage with the measuring device 27, the amount of change in the inductance component of the measurement coil 11 in a state where the metal thin film is not formed on the surface of the substrate 5 can be obtained.

Before performing the film forming process, the amount of change in the inductance component of the measuring coil 11 and the thickness of a known thin film formed on the surface of the same type and thickness of the substrate to be measured are determined in advance. Are associated with each other, and the corresponding relationship is stored in the measuring device 27.

Next, the vacuum valve 58 ₁ between the first processing chamber 51 and the transfer chamber 40 is opened, the hand 43 is put into the first processing chamber 51, and the substrate is placed in the first processing chamber 51. The hand 43 is taken out of the first processing chamber 51 at a predetermined position.

[0047] Then, close the vacuum valve 58 ₁ between the transfer chamber 40 and the first processing chamber 51, the film forming process the first layer in the first treatment chamber 51. Once more deposition treatment eyes is completed, opening the vacuum valve 51 ₁ between the transfer chamber 40 and the first treatment chamber 51, placed a hand 43 into the first processing chamber 51, the substrate 5 hand 43 above And the hand 43 is taken out of the first processing chamber 51.

The operation at this time will be described below with reference to FIGS. FIG. 3 shows a state where the hand 43 is located in the first processing chamber 51 and the substrate is transferred onto the hand 43.

Next, the hand 43 is pulled out of the first processing chamber 51. This state is shown in FIGS. FIG. 8 is a plan view illustrating a state where the substrate 5 moves between the first processing chamber 51 and the transfer chamber 40, and the hand 43 and the like are omitted. FIG. 4 corresponds to a sectional view taken along line AA of FIG.

As shown in FIGS. 8 and 4, the first processing chamber 5
When the substrate 5 is pulled out from 1, the end on the transfer chamber 40 side is located below the measurement coil 11. In that state,
As shown in FIG. 12, the surface of the substrate 5 and the measurement coil 11 are in a state of being close to each other. In FIG. 12, reference numeral 30 indicates a silicon substrate, and reference numeral 31 indicates a metal thin film 31 formed on the surface thereof.

In this state, an AC voltage is supplied to the measuring coil 11 to determine the amount of change in the inductance component of the measuring coil 11. The amount of change in the inductance component of the measurement coil 11 changes according to the thickness of the thin film. As described above, the measuring device 27 stores the correspondence between the amount of change in the inductance component and the film thickness, and the amount of change in the inductance component in the state where the thin film is formed, and the thin film is formed. The difference from the change in the inductance component without
By comparing this difference with the above-described correspondence, the thickness of the thin film at the end of the substrate 5 on the transfer chamber 40 side can be obtained.

Next, when the hand 43 is further pulled out, the central portion of the substrate 5 is located below the measurement coil 11.
The state is shown in FIG. 9 and FIG. FIG. 9 is a plan view showing this state, and FIG. 5 is a sectional view taken along line BB of FIG.

The measuring device 27 obtains the amount of change in the inductance component of the measurement coil 11 in the same manner as described above even when the central portion of the substrate 5 is located below the measurement coil 11. The thickness of the thin film at the central portion of No. 5 can be obtained.

When the hand 43 is further pulled out, the end of the substrate 5 located on the first processing chamber 51 side is located below the measurement coil 11. The state is shown in FIGS. FIG.
0 is a plan view showing the state, and FIG.
FIG. 4 shows a cross-sectional view taken along line C.

The measuring device 27 obtains the amount of change in the inductance component of the measuring coil 11 even when the end of the substrate 5 located on the first processing chamber 51 side is positioned below the measuring coil 11. From the amount of change, the film thickness at the end of the substrate 5 located on the first processing chamber 51 side can be obtained. With the operations described above, the film thickness of the metal thin film can be obtained at a total of three points, that is, the both ends and the center of the substrate 5 in the transport direction.

During the above operation, the distance measuring device 9 irradiates the surface of the substrate 5 to be measured with laser light, detects the phase difference between the irradiated light and the reflected light from the surface of the substrate 5, and detects the phase difference. The distance between the surface 5 and the measuring coil 11 is constantly measured and output to the transfer robot 45.

The transfer robot 45 moves the hand 43 while finely adjusting the position of the hand 43 according to the distance measured by the distance measuring device 9, so that the distance between the surface of the substrate 5 and the measurement coil 11 is always constant. Is working like that. Measurement coil 11
Is defined by the sum of the thickness of the substrate and the thickness of the thin film and the distance between the measurement coil 11 and the surface of the substrate 5, and the distance between the measurement coil 11 and the surface of the substrate 5 is not constant. In this case, the change amount of the inductance component cannot be accurately obtained, but in the present embodiment,
Since the distance between the measurement coil 11 and the surface of the substrate 5 is always kept constant, the amount of change in the inductance component can be accurately obtained.

As described above, the average value of the film thickness at three points and the film thickness distribution can be obtained by determining the film thickness of the thin film at three positions on the surface of the substrate 5.
When the average value of the film thickness obtained in this way does not reach the predetermined value, or when the film thickness at three points is more than a permissible error, the substrate 5 is transferred to the first processing chamber 51 again. To adjust the film forming parameters, the orientation of the substrate, and the like, and perform a film forming process to compensate for the variation.

When the film thickness and the film thickness distribution of the first thin film formed on the surface of the substrate 5 reach predetermined values, the vacuum valve 58 between the first processing chamber 51 and the transfer chamber 40 is provided. ₁
Closed, opened vacuum valve 52 ₁ between the transfer chamber 40 and the second process chamber 52, similarly to the operation described above, and carries the substrate 5 into the second processing chamber 52, a second layer of thin film Is performed.

After the second layer forming process is completed, the substrate 5 is taken out of the second processing chamber 52. The ceiling side of the inner transfer chamber 40 is in the vicinity of the second processing chamber 52, the thickness sensor ₇₁ and the film thickness sensor 7 ₂ of the same configuration described above is arranged, the second process chamber 52 When the substrate is taken out, the thickness of the thin film on the surface of the substrate 5 is measured at three points, and the thickness and the thickness distribution of the thin film are obtained. When the proper film thickness and film thickness distribution are obtained in this manner, the second layer film forming process is terminated, and when not obtained, the substrate 5 is loaded into the second processing chamber 52 again, and the film forming process is performed. do.

[0061] After the film forming process a second layer is completed, opening the vacuum valve 58 ₆ between the transport room 56 and the transfer chamber 40,
Put the hand 43 of the transfer robot 40 into the loading / unloading room 56,
The substrate is positioned transport room 56, closing the vacuum valve 58 ₆ between the transport room 56 and the transfer chamber 40, transport room 56
, And then open the door of the loading / unloading room 56,
The substrate is taken out of the apparatus. Through the above steps, a two-layer film can be formed on the substrate surface in a vacuum atmosphere.

As described above, in the present embodiment, the film thickness sensors 7 ₁ and 7 ₂ are arranged in the transfer chamber 40, and the measuring coils 11 are provided inside each of them. Then, an eddy current is generated in the substrate 5, and the thickness of the thin film is determined according to the amount of change in the inductance component of the measurement coil 11 due to the eddy current. Therefore, the actual thickness can be accurately determined. Further, since the thickness of the thin film is obtained by obtaining the amount of change in the inductance component, the thickness of the thin film at a predetermined position on the substrate surface can be obtained in a very short time.

Accordingly, during the transfer of the substrate 5 from the first processing chamber 51 to the second processing chamber 52, the thickness of the first thin film can be measured accurately and in a short time. If the thickness of the thin film has not reached the predetermined value, the first thin film can be formed with the predetermined thickness by performing the film forming process of the first thin film again.

In the present embodiment, the film thickness at a plurality of locations on the substrate 5 is determined while moving the substrate 5 in the vicinity of the measurement coil 11, so that the film thickness distribution of the thin film can also be determined. Furthermore, since the film thickness can be measured using the small measuring coil 11, even if it is difficult to secure a space for providing a dedicated chamber for film thickness measurement as in a vacuum multi-chamber, the measurement can be performed in the transfer chamber 40. The film thickness can be accurately and quickly measured simply by disposing the coil.

It should be noted that the two film thickness sensors 7 ₁ and 7 ₂ are
However, the present invention is not limited to this, and may be arranged on the ceiling side of the transfer chamber 40 near all the processing chambers 51 to 55, or only one piece may be arranged in the transfer chamber 40. You may comprise.

The film thickness sensors 7 ₁ and 7 ₂ are arranged on the ceiling side of the transfer chamber 40 so that they are close to the surface of the substrate 5. However, the present invention is not limited to this. , for example, a thickness sensor ₇₁ on the inner bottom surface side of the transfer chamber 40,
7 ₂ are arranged, when the substrate 5 is moved may be configured such that the substrate 5 and the film thickness sensor 7 _1, 7 ₂ in the back surface side of the substrate 5 comes close.

Further, at least one of the first to fifth processing chambers 51 to 55 may be an etching apparatus configured to be able to etch the substrate surface inside. Thus constituted, the substrate 5 is positioned on the film thickness sensor ₇₁ prior to the etching process, when measuring the thickness of the thin film of the substrate surface, it is possible to determine the time required for etching accurately. After the etching process, the thickness of the surface of the substrate 5 is measured, and when the thickness of the thin film becomes zero, the etching is terminated. Can be etched.

Further, the first to fifth processing units 51 to 5
5, any one of them may be a processing device dedicated to film thickness measurement. Reference numeral 81 in FIG. 16 indicates a multi-chamber having the same configuration as the multi-chamber 50 except that one of the first to fifth processing apparatuses 51 to 55 is replaced with a measurement chamber 56.

In the multi-chamber 81, the transfer chamber 4
The film thickness sensors 7 ₁ , 7 ₂ and the distance measuring devices 9 ₁ , 9 ₂ are not arranged in 0, and the film thickness sensor 7 and the distance measuring device 9 are arranged in the measuring chamber 56.

The measuring chamber 56 and the transfer chamber 40 are connected to the vacuum valve 5
When the vacuum valve 59 is opened, the measurement chamber 56 and the transfer chamber 40 are connected, the arms 41 and 42 of the transfer robot 45 are extended, and the hand 43 is inserted into the measurement chamber 56. The substrate 5 on the hand 43 stops at a position below the film thickness sensor 7 and the distance measuring device 9.

In this state, the measuring coil 11 in the film thickness sensor 7 is located at a position close to the metal thin film on the surface of the substrate 5,
The distance between the metal thin film and the measurement coil 11 is measured by the distance measurement device 9, an AC voltage is applied to the inductance bridge 10, the amount of change in the inductance component of the measurement coil 11 is measured, and the thickness of the metal thin film is measured. It has become required.

In the multi-chamber 81, the measuring chamber 5
6 and the transfer chamber 40 are connected by the vacuum valve 59, but in the multi-chamber 82 shown in FIGS. 17 and 18, a part of the transfer chamber 49 is swelled to the side, and the swelled portion is the measurement chamber. It is 57. The measurement chamber 57 is integral with the transfer chamber 49, and no vacuum valve is arranged between the measurement chamber 57 and the transfer chamber 49.

Here, the measurement chamber 57 is disposed at the position of the fifth processing chamber 55 of the multi-chamber 50 shown in FIG. 1, and the first to fourth processing chambers 51 to 54 and the loading / unloading chamber 5 are arranged.
6, the substrate 5 is inserted into the measurement chamber 57, and the film thickness sensor 7 and the distance measurement device 9 in the measurement chamber 57 are inserted.
Thereby, the thickness of the metal thin film on the surface of the substrate 5 can be measured.

While the above description has been given of the vacuum multi-chambers 50, 81 and 82 for processing a substrate in a vacuum atmosphere, the present invention is not limited to this, and is applicable to an apparatus for processing a substrate in an air atmosphere. It is possible.

Reference numeral 60 in FIG. 14A shows a plating film forming apparatus according to another embodiment of the present invention. This apparatus has a processing chamber 61, and a loader 6 is provided inside the processing chamber 61.
2, an unloader 63, a transfer robot 64, a first film forming chamber 65, a second film forming chamber 66, a cleaning tank 67, a spin dryer 68, and a film thickness measuring table 69 are arranged.

The first and second film forming chambers 65 and 66 are
A plating tank in which a chemical solution and an electrode are placed inside each, and a substrate on which a seed thin film is formed is connected to the electrode, and the substrate is immersed in the chemical solution and a voltage is applied to the electrode. Thus, a metal thin film can be grown on a seed thin film surface.

The cleaning tank 67 is configured to clean the substrate after film formation, and the spin dryer 68 is configured to rotate and dry the cleaned substrate.

The transfer robot 64 moves the substrate among the loader 62, the unloader 63, the first film forming chamber 65, the second film forming chamber 66, the cleaning tank 67, the spin dryer 68 and the film thickness measuring table 69. It is configured to be able to.

The film thickness sensor 7 described above is arranged in the film thickness measuring table 69, and the film thickness sensor 7 is connected to the measuring device 8. The structure of the film thickness measuring table 69 is shown in FIG.
Shown in The film thickness measuring table 69 is made of an insulator, has a flat surface, and has electrostatic attraction electrodes 82 ₁ and 82 ₂ embedded therein, and a direct current between the electrostatic attraction electrodes 82 ₁ and 82 _2. When voltage is applied, the substrate 5 is configured to be electrostatically attracted while being placed on the surface.

The film thickness sensor 7 is embedded in the film thickness measuring table 69. The measurement coil 11 and the reference coil 12 are disposed inside the film thickness sensor 7, and the measurement coil 11 is disposed at a position closer to the surface of the measurement table 69 than the reference coil 12.

The film thickness sensor 7 is connected to the measuring device 8 having the above-described configuration. When the substrate 5 is mounted on the surface of the film thickness measuring table 69, the change in the inductance component of the measuring coil 11 is measured. It is configured so that it can be obtained.

Before the film formation is started, the inductance bridge is balanced in a state where the substrate is not placed on the measuring table 69, and the voltage Vs appearing between the output terminals 23 and 24 of the inductance bridge becomes 0V. So that

To form a single-layer metal thin film using only the first film forming chamber 65 in the film forming apparatus 60 described above,
First, the substrate 5 is put in the loader 62. Then, the transfer robot 64 is activated and places the substrate 5 on the film thickness measuring table 69. When the substrate 5 is placed on the surface of the film thickness measuring table 69 and electrostatically attracted, the back surface of the substrate 5 is
In the vicinity of the measurement coil 11.

In this state, the AC voltage source 26 is activated to supply an AC current to the measuring coil 11 to generate an eddy current in the substrate 5, and the substrate 5 having no thin film formed on the surface is transferred to the measuring coil 11. The amount of change in the inductance component when approaching is determined in advance. Before performing the film forming process, the relationship between the amount of change in the inductance component of the measurement coil 11 and the thickness of the known thin film formed on the surface of the same type and thickness of the substrate to be measured corresponds in advance. The corresponding relationship is stored in the measuring device 27 in the measuring device 8 in the same manner as in the vacuum multi-chamber 50 in FIG.

Next, the transfer robot 64 transfers the substrate 5 to the first film forming chamber 65, and forms a metal thin film on the surface of the substrate by plating. This film forming process is performed in two steps. In the first film forming process, film forming is continued until the film thickness becomes about half of a predetermined film thickness.

When the first film forming process is completed, the transfer robot 64 moves the substrate 5 to the cleaning tank 67. The substrate 5 is cleaned inside the cleaning tank 67. The transfer robot 64 moves the cleaned substrate to the spin dryer 68. The spin dryer 68 dries the washed substrate 5.

When the substrate 5 is dried, the transfer robot 64
Places the substrate 5 on the film thickness measuring table 69. At this time, the transfer robot 64 places the substrate 5 such that one end of the substrate 5 is located above the film thickness sensor 7.

In this state, the substrate 5 is electrostatically attracted to the film thickness measuring table 69, an alternating current is supplied to the measuring coil 11, and the variation of the inductance component of the measuring coil 11 is obtained. The amount of change in the inductance component of the measurement coil 11 changes according to the thickness of the thin film. As described above, the measuring device 27
The correspondence between the change amount of the inductance component and the film thickness is stored, and the change amount of the inductance component when the thin film is formed, and the change amount of the inductance component when the thin film is not formed. And take this difference,
By collating with the above-described correspondence, the thickness of the thin film at one end of the substrate 5 can be obtained.

When the film thickness of the thin film at one end of the substrate 5 is obtained, the transfer robot 64 moves the substrate 5 on the film thickness measuring table 69, and the end of the substrate 5 opposite to the one end where the film thickness was measured. The part is located above the film thickness sensor 7.

Next, the amount of change in the inductance component of the measurement coil 11 in this state is obtained, and the thickness of the thin film is obtained. Up to this point, the thickness of the thin film at both ends of the substrate 5 is obtained.

Thereafter, the transfer robot 64 moves the substrate 5 on the film thickness measuring table 69, and positions the central portion of the substrate 5 above the film thickness sensor 7, and in this state the measuring coil 1
The amount of change in the inductance component of No. 1 is obtained, and the thickness of the thin film is obtained. As described above, the thickness of the thin film at both ends and the center of the substrate 5 is obtained.

Next, the transfer robot 64 moves the substrate 5 to the first position.
Is moved to the second film forming chamber 65, and the second film forming process is performed. At this time, the first film forming chamber 65 is formed according to the film thickness and the film thickness distribution obtained after the first film forming process is completed. Are set for the second film forming process. At this time,
In accordance with the film thickness and the film thickness distribution, a voltage, a stirring condition, and the like are set in a direction for compensating those variations so that the film thickness on the substrate surface becomes uniform.

Thus, the second film forming process in the first film forming chamber 65 is performed.
The substrate 5 is sequentially transported to the cleaning tank 67 and the spin dryer 68 by 4, washed and dried respectively, and then placed on the film thickness measuring table 69 again to measure the film thickness and the film thickness distribution. When the film thickness and the film thickness distribution have proper values, the substrate 5 is transferred to the unloader 63 and
The substrate 5 is taken out.

The case of forming the film in two steps has been described above. However, the film is formed to a predetermined film thickness in one time, the film thickness distribution is measured, and the previous film thickness distribution is compensated at the next film formation. It is also possible to reset the film forming parameters to the conditions to be performed and to form the film so as to always control the film thickness distribution.

In the film forming apparatus 60 of FIG. 14 described above,
Similar to the vacuum multi-chamber 50 of FIG. 1, the thickness of the thin film on the substrate surface can be obtained accurately and quickly. In the film forming apparatus 60, unlike the vacuum multi-chamber 50 of FIG. 1, a film forming process is performed on the surface of the substrate 5 in the atmosphere, but in this case, the film thickness can be obtained without any problem.

In the above example, the substrate 5 was placed on the film thickness measuring table 69 and the thickness of the metal thin film was measured. However, the film thickness was measured with the substrate 5 placed on the substrate transfer robot 64. You can do it too.

Reference numeral 71 in FIG. 15 indicates a ceiling of the processing chamber 61, and reference numeral 72 indicates a bottom wall surface of the processing chamber 61. Reference numeral 60 'indicates another example of the plating apparatus. This plating apparatus 60 ′ is replaced with a film thickness measuring table 69 of the plating apparatus 60, and a support 73 suspended from a ceiling 71.
A film thickness sensor 70 and a distance measuring device 79 having the same configuration as the above-described film thickness sensor 7 and distance measuring device 9 are attached to the lower end. Other configurations are the same as those of the plating apparatus 60. The film thickness sensor 70 and the distance measuring device 79 are connected to the measuring device 8 arranged outside the processing chamber 61.

[0098] The film thickness sensor 70 of the plating apparatus 60 '
15 is disposed at a position slightly higher than the horizontal plane on which the substrate transfer robot 64 horizontally moves the substrate 5.
When the substrate 5 is placed on the tip of the arm of the substrate transfer robot 64 and the arm is extended and contracted to move the substrate 5 to a position below the film thickness sensor 70, the measurement coil 11 in the film thickness sensor 70 The reference coil 12 in the film thickness sensor 70 is located closer to the metal thin film on the surface of the substrate 5 than the measurement coil 11.

In this state, the distance between the metal thin film and the reference coil 11 is measured by the distance measuring device 79, an AC voltage is applied to the inductance bridge 10, and the amount of change in the inductance component of the reference coil 11 is measured. The film thickness of the metal thin film can be measured while being placed on the substrate transfer robot 64.

In each of the above-described embodiments, the amount of change in the inductance component of the measurement coil 11 is measured using the Maxwell inductance bridge. However, the present invention is not limited to this. If it is a high-precision measuring device that can measure the amount of change in
Any device may be used.

In the above-described embodiment, the substrate 5 is transported in a horizontal state, and the thickness of the thin film is measured at that time. However, the present invention is not limited to this. The substrate 5 may be transported in an upright state, and the thickness of the thin film may be measured at that time.

[0102]

As described above, it is possible to accurately determine the thickness of a thin film while forming the thin film on the substrate surface.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating an arrangement state of a film thickness measuring apparatus according to an embodiment of the present invention.

FIG. 3 is a first cross-sectional view illustrating an operation of measuring while moving a substrate in one embodiment of the present invention.

FIG. 4 is a second cross-sectional view illustrating an operation of measuring while moving the substrate in one embodiment of the present invention.

FIG. 5 is a third cross-sectional view illustrating an operation of measuring while moving the substrate in one embodiment of the present invention.

FIG. 6 is a fourth cross-sectional view illustrating an operation of measuring while moving the substrate in one embodiment of the present invention.

FIG. 7 is a fifth sectional view illustrating an operation of measuring while moving the substrate in one embodiment of the present invention.

FIG. 8 is a first plan view illustrating an operation of measuring while moving a substrate in one embodiment of the present invention.

FIG. 9 is a second plan view illustrating an operation of measuring while moving the substrate in one embodiment of the present invention.

FIG. 10 is a third plan view illustrating an operation of measuring while moving the substrate in one embodiment of the present invention.

FIG. 11 illustrates a configuration of a film thickness sensor and a measurement device according to an embodiment of the present invention.

FIG. 12 is a diagram illustrating an arrangement state of a measurement coil, a reference coil, and a substrate according to an embodiment of the present invention.

FIG. 13 is a graph showing an example of the relationship between the film thickness and the amount of change in the inductance component.

14A is a diagram illustrating a substrate processing apparatus according to another embodiment of the present invention. FIG. 14B is a diagram illustrating a configuration of a film thickness measuring table according to another embodiment of the present invention.

FIG. 15 is a diagram for explaining another embodiment of the present invention.

FIG. 16 is a view for explaining an embodiment in which a measurement chamber is provided in place of the processing chamber.

FIG. 17 is a view for explaining an embodiment in which the measurement chamber and the transfer chamber are integrated.

FIG. 18 is a plan view of the embodiment.

FIG. 19 illustrates a conventional substrate processing apparatus.

[Explanation of symbols]

7,7 _1, 7 ₂ ...... thickness sensors 8, 8 _1, 8 ₂ ...... measuring apparatus (measuring unit) 11 ...... measuring coil 12 ...... reference coil 27 ...... alternating voltage source (power source) 40, 49 ... ... Transfer chambers 50, 81, 82 ... Vacuum multi-chamber (substrate processing apparatus) 51-55 ... Processing chamber 56 ... Transport chamber 60 ... Film forming apparatus (Substrate processing apparatus)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/66 G01B 7/10 Z 5F031 21/68 H01L 21/302 E 5F045 (72) Inventor Akira Kubo Kanagawa 2500 Hagizono, Chigasaki, Japan Pref. (72) Inventor Shizuo Nakamura 2500, Hagizono, Chigasaki, Kanagawa F Term (reference) 2F063 AA16 BB02 BB05 BB10 DA01 DA05 GA08 LA27 4K029 BC03 EA01 KA01 4K030 DA08 GA11 GA12 HA11 HA13 HA14 JA01 KA39 KA41 4M106 AA01 BA14 CA48 DH03 DH19 DJ20 5F004 AA01 AA16 BC06 CA03 CB05 DB08 5F031 CA02 FA01 FA07 GA02 GA44 GA47 GA49 JA01 JA02 JA06 JA13 JA14 JA32. GB09 HA25

Claims (12)

[Claims] An apparatus has a transfer chamber and a processing chamber connected to the transfer chamber, wherein the substrate is loaded from the transfer chamber into the processing chamber, and the substrate can be processed inside the processing chamber. A substrate processing apparatus, comprising: a film thickness sensor, a power supply, and a measurement unit, wherein the film thickness sensor includes a measurement coil disposed in the transfer chamber; An AC voltage is applied to the measurement coil when approaching the measurement coil, and an eddy current is generated in the conductive thin film on the substrate surface. A substrate processing apparatus configured to measure the resulting signal. 2. The substrate processing apparatus according to claim 1, wherein a plurality of the processing chambers are provided, and at least one of the processing chambers is configured to grow a conductive thin film on a surface of the substrate. 3. The processing chamber according to claim 1, wherein a plurality of processing chambers are provided, and at least one of the processing chambers is configured to etch a conductive thin film formed on a surface of the substrate.
A substrate processing apparatus according to claim 2. 4. A substrate processing apparatus comprising: processing means configured to grow a conductive thin film on a surface of a substrate; and transport means configured to move the substrate to the processing means. An apparatus, comprising: a film thickness sensor, a power supply, and a measurement unit, wherein the film thickness sensor includes a measurement coil arranged at a predetermined position, Wherein the power supply is configured to apply an AC voltage to the measurement coil when approaching the measurement coil to generate an eddy current in the conductive thin film on the substrate surface. The substrate processing apparatus, wherein the measuring unit is configured to measure a signal generated in the measuring coil under the influence of the eddy current. 5. The substrate processing apparatus according to claim 1, wherein the measurement coil is disposed in a path along which the substrate moves. 6. The film thickness sensor has a reference coil and two reference resistors, wherein the reference coil is connected in series to the measurement coil, and when the measurement coil and the substrate face each other, The two reference resistances are arranged so as to be located farther than the measurement coil with respect to the substrate, the two reference resistances are connected in series with each other, a series connection circuit of the two reference resistances, the measurement coil and the reference The series connection circuit of the coils is connected in parallel with each other, and the measuring unit connects the measurement coil and the reference coil when an AC voltage is applied to both ends of the series connection circuit of the measurement coil and the reference coil. 6. The apparatus according to claim 1, wherein a potential difference between the divided portion and a portion where the two reference resistors are connected to each other is measured as a signal generated in the measurement coil. The substrate processing apparatus according to claim 1. 7. A processing of a substrate in which a conductive thin film is formed on a surface of a substrate in a film forming chamber, and the substrate on which the thin film is formed is taken out of the film forming chamber, and then the film thickness of the thin film is obtained. A method comprising: after removing the substrate from the film forming chamber, bringing the substrate and a measurement coil close to each other, and applying an AC voltage to the measurement coil to generate an eddy current in the conductive thin film on the substrate surface. Detecting a signal generated in the measurement coil under the influence of the eddy current, and obtaining a thickness of a thin film formed on the substrate surface based on the signal. 8. A method for processing a substrate, wherein the thickness of the thin film is determined before etching the conductive thin film formed on the surface of the substrate in the etching chamber. Before carrying in, the substrate and the measurement coil are brought close to each other, an AC voltage is applied to the measurement coil to generate an eddy current in the conductive thin film on the substrate surface, and the eddy current influences the measurement coil. A method for processing a substrate, comprising: detecting a generated signal; and determining a thickness of a thin film formed on the substrate surface based on the signal. 9. After etching a conductive thin film formed on a substrate surface inside an etching chamber, the substrate is taken out of the etching chamber, the substrate is brought close to a measurement coil, and an AC voltage is applied to the measurement coil. To generate an eddy current in the conductive thin film on the substrate surface, detect a signal generated in the measurement coil under the influence of the eddy current, and, based on the signal, a thin film formed on the substrate surface A method for processing a substrate, comprising determining a film thickness of a substrate. 10. When performing a surface treatment for increasing or decreasing the thickness of a conductive thin film formed on a substrate surface in a processing chamber, removing the substrate from the processing chamber during the surface treatment. A method of processing a substrate for determining the thickness of the thin film, wherein the substrate is taken out of the processing chamber, the substrate is brought close to a measurement coil, and an AC voltage is applied to the measurement coil, An eddy current is generated in the conductive thin film on the surface, a signal generated in the measurement coil due to the influence of the eddy current is detected, and a film thickness of the thin film formed on the substrate surface is determined based on the signal. Characteristic substrate processing method. 11. A signal generated in the measurement coil at a plurality of positions on the substrate while moving the substrate near the measurement coil. A method for processing a substrate as described in the above. 12. A reference coil connected in series with the measurement coil at a position farther than the measurement coil with respect to the substrate, two reference resistors are connected in series, and the two reference resistors are connected in series. A series connection circuit and a series connection circuit of the measurement coil and the reference coil are connected in parallel to form a Maxwell inductance bridge, and using the Maxwell inductance bridge,
12. The substrate processing method according to claim 7, wherein a signal generated in the measurement coil is detected by obtaining a change in an inductance component of the measurement coil.